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LM5576MH

LM5576MH

  • 厂商:

    BURR-BROWN(德州仪器)

  • 封装:

    HTSSOP-20_6.5X4.4MM-EP

  • 描述:

    IC REG BUCK ADJ 3A 20HTSSOP

  • 数据手册
  • 价格&库存
LM5576MH 数据手册
Product Folder Sample & Buy Support & Community Tools & Software Technical Documents LM5576, LM5576-Q1 SNVS447J – JANUARY 2007 – REVISED NOVEMBER 2014 LM5576/-Q1 SIMPLE SWITCHER® 75 V, 3 A Step-Down Switching Regulator 1 Features 3 Description • The LM5576 is an easy to use SIMPLE SWITCHER® buck regulator which allows design engineers to design and optimize a robust power supply using a minimum set of components. Operating with an input voltage range of 6 - 75 V, the LM5576 delivers 3 A of continuous output current with an integrated 170 mΩ N-Channel MOSFET. The regulator utilizes an Emulated Current Mode architecture which provides inherent line regulation, tight load transient response, and ease of loop compensation without the usual limitation of low-duty cycles associated with current mode regulators. The operating frequency is adjustable from 50 kHz to 500 kHz to allow optimization of size and efficiency. To reduce EMI, a frequency synchronization pin allows multiple ICs from the LM(2)557x family to self-synchronize or to synchronize to an external clock. The LM5576 ensures robustness with cycle-by-cycle current limit, short-circuit protection, thermal shut-down, and remote shut-down. The device is available in a power enhanced HTSSOP-20 package featuring an exposed die attach pad for thermal dissipation. The LM5576 is supported by the full suite of WEBENCH® On-Line design tools. 1 • • • • • • • • • • • LM5576-Q1 is an Automotive Grade Product that is AEC-Q100 grade 1 Qualified (−40°C to + 125°C Operating Junction Temperature) and AEC-Q100 Grade 0 Qualified (−40°C to + 150°C Operating Junction Temperature) Integrated 75 V, 170 mΩ N-channel MOSFET Ultra-Wide Input Voltage Range from 6 V to 75 V Adjustable Output Voltage as Low as 1.225 V 1.5% (Q1) and 1.65% (Q0) Feedback Reference Accuracy Operating Frequency Adjustable Between 50 kHz and 500 kHz with Single Resistor Master or Slave Frequency Synchronization Adjustable Soft-Start Emulated Current Mode Control Architecture Wide Bandwidth Error Amplifier Built-in Protection HTSSOP-20EP (Exposed Pad) 2 Applications • • Automotive Industrial Device Information(1) PART NUMBER LM5576 LM5576-Q1 PACKAGE BODY SIZE (NOM) HTSSOP (20) 6.50 mm x 4.40 mm (1) For all available packages, see the orderable addendum at the end of the datasheet. Simplified Application Schematic VIN VIN BST SYNC SW VOUT LM5576 SD IS RT VCC SS RAMP OUT FB COMP GND 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. LM5576, LM5576-Q1 SNVS447J – JANUARY 2007 – REVISED NOVEMBER 2014 www.ti.com Table of Contents 1 2 3 4 5 6 7 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Pin Configuration and Functions ......................... Specifications......................................................... 1 1 1 2 3 4 6.1 6.2 6.3 6.4 6.5 6.6 6.7 4 4 5 5 5 5 7 Absolute Maximum Ratings ...................................... Handling Ratings: LM5576........................................ Handling Ratings: LM5576-Q1.................................. Recommended Operating Conditions....................... Thermal Information .................................................. Electrical Characteristics........................................... Typical Characteristics .............................................. Detailed Description .............................................. 9 7.1 Overview ................................................................... 9 7.2 Functional Block Diagram ......................................... 9 7.3 Feature Description................................................... 9 7.4 Device Functional Modes........................................ 10 8 Application and Implementation ........................ 16 8.1 Application Information............................................ 16 8.2 Typical Application .................................................. 17 9 Power Supply Recommendations...................... 25 10 Layout................................................................... 25 10.1 Layout Guidelines ................................................. 25 10.2 Layout Example .................................................... 26 11 Device and Documentation Support ................. 28 11.1 11.2 11.3 11.4 Related Links ........................................................ Trademarks ........................................................... Electrostatic Discharge Caution ............................ Glossary ................................................................ 28 28 28 28 12 Mechanical, Packaging, and Orderable Information ........................................................... 28 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision I (April 2013) to Revision J • Page Added Pin Configuration and Functions section, Handling Rating table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section ................................................................................................................................................................................... 1 Changes from Revision H (April 2013) to Revision I • 2 Page Changed layout of National Data Sheet to TI format ........................................................................................................... 26 Submit Documentation Feedback Copyright © 2007–2014, Texas Instruments Incorporated Product Folder Links: LM5576 LM5576-Q1 LM5576, LM5576-Q1 www.ti.com SNVS447J – JANUARY 2007 – REVISED NOVEMBER 2014 5 Pin Configuration and Functions 20-Pin HTSSOP Package Top View 1 VCC BST SD PRE VIN SW VIN SW 2 3 4 5 6 7 8 9 10 SYNC IS COMP IS FB PGND RT PGND RAMP OUT AGND SS 20 19 18 17 16 15 14 13 12 11 Pin Functions PIN I/O DESCRIPTION APPLICATION INFORMATION NO. NAME 1 VCC O Output of the bias regulator VCC tracks VIN up to 9 V. Beyond 9 V, VCC is regulated to 7 Volts. A 0.1-uF to 1-uF ceramic decoupling capacitor is required. An external voltage (7.5 V – 14 V) can be applied to this pin to reduce internal power dissipation. 2 SD I Shutdown or UVLO input If the SD pin voltage is below 0.7 V the regulator will be in a low power state. If the SD pin voltage is between 0.7 V and 1.225 V the regulator will be in standby mode. If the SD pin voltage is above 1.225 V the regulator will be operational. An external voltage divider can be used to set a line undervoltage shutdown threshold. If the SD pin is left open circuit, a 5-µA pull-up current source configures the regulator fully operational. 3, 4 VIN I Input supply voltage Nominal operating range: 6 V to 75 V 5 SYNC I Oscillator synchronization input or output The internal oscillator can be synchronized to an external clock with an external pull-down device. Multiple LM5576 devices can be synchronized together by connection of their SYNC pins. 6 COMP O Output of the internal error amplifier The loop compensation network should be connected between this pin and the FB pin. 7 FB I Feedback signal from the regulated output This pin is connected to the inverting input of the internal error amplifier. The regulation threshold is 1.225 V. 8 RT I Internal oscillator frequency set input The internal oscillator is set with a single resistor, connected between this pin and the AGND pin. 9 RAMP O Ramp control signal An external capacitor connected between this pin and the AGND pin sets the ramp slope used for current mode control. Recommended capacitor range 50 pF to 2000 pF. 10 AGND GROUND Analog ground Internal reference for the regulator control functions 11 SS O Soft-start An external capacitor and an internal 10-µA current source set the time constant for the rise of the error amp reference. The SS pin is held low during standby, VCC UVLO and thermal shutdown. 12 OUT O Output voltage connection Connect directly to the regulated output voltage. Copyright © 2007–2014, Texas Instruments Incorporated Product Folder Links: LM5576 LM5576-Q1 Submit Documentation Feedback 3 LM5576, LM5576-Q1 SNVS447J – JANUARY 2007 – REVISED NOVEMBER 2014 www.ti.com Pin Functions (continued) PIN I/O DESCRIPTION APPLICATION INFORMATION NO. NAME 13, 14 PGND GROUND Power ground Low side reference for the PRE switch and the IS sense resistor. 15, 16 IS I Current sense Current measurement connection for the recirculating diode. An internal sense resistor and a sample/hold circuit sense the diode current near the conclusion of the off-time. This current measurement provides the DC level of the emulated current ramp. 17, 18 SW O Switching node The source terminal of the internal buck switch. The SW pin should be connected to the external Schottky diode and to the buck inductor. 19 PRE I Pre-charge assist for the bootstrap capacitor This open drain output can be connected to SW pin to aid charging the bootstrap capacitor during very light load conditions or in applications where the output may be pre-charged before the LM5576 is enabled. An internal pre-charge MOSFET is turned on for 265 ns each cycle just prior to the on-time interval of the buck switch. 20 BST I Boost input for bootstrap capacitor An external capacitor is required between the BST and the SW pins. A 0.022-µF ceramic capacitor is recommended. The capacitor is charged from VCCvia an internal diode during the off-time of the buck switch. NA EP GROUND Exposed Pad Exposed metal pad on the underside of the device. It is recommended to connect this pad to the PWB ground plane, in order to aid in heat dissipation. 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) (2) MAX UNIT VIN to GND MIN 76 V BST to GND 90 V PRE to GND 76 V SW to GND (Steady State) –1.5 V BST to VCC 76 V SD, VCC to GND 14 V 14 V BST to SW OUT to GND Limited to VIN SYNC, SS, FB, RAMP to GND (1) (2) 7 V Absolute Maximum Ratings are limits beyond which damage to the device may occur. Recommended Operating Conditions are conditions under which operation of the device is intended to be functional. For ensured specifications and test conditions, see the Electrical Characteristics. If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and specifications. 6.2 Handling Ratings: LM5576 Tstg Storage temperature range V(ESD) (1) 4 Electrostatic discharge MIN MAX UNIT –65 150 °C Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins (1) 2 kV JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Submit Documentation Feedback Copyright © 2007–2014, Texas Instruments Incorporated Product Folder Links: LM5576 LM5576-Q1 LM5576, LM5576-Q1 www.ti.com SNVS447J – JANUARY 2007 – REVISED NOVEMBER 2014 6.3 Handling Ratings: LM5576-Q1 Tstg Storage temperature range V(ESD) Electrostatic discharge (1) MIN MAX –65 150 °C 2 kV Human body model (HBM), per AEC Q100-002 (1) UNIT AEC Q100-002 indicates HBM stressing is done in accordance with the ANSI/ESDA/JEDEC JS-001 specification. 6.4 Recommended Operating Conditions MIN VIN MAX UNIT 6 75 V Operation Junction Temperature (Q0) −40 150 °C Operation Junction Temperature (Q1) −40 125 °C 6.5 Thermal Information LM5576 THERMAL METRIC (1) PWP UNIT 20 PINS RθJA (1) Junction-to-ambient thermal resistance 40 °C/W For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953. 6.6 Electrical Characteristics Typical values correspond to TJ = 25°C, VIN = 48 V, RT = 32.4kΩ. Minimum and maximum limits apply over –40°C to 125°C junction temperature range unless otherwise stated. (1) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT 6.85 7.15 7.45 V STARTUP REGULATOR VCC Reg VCC Regulator Output VCC LDO Mode turn-off VCC Current Limit VCC = 0 V VCC UVLO Threshold (VCC increasing) 9 V 25 mA VCC SUPPLY 5.03 VCC Undervoltage Hysteresis 5.35 5.67 V 0.25 V Bias Current (Iin) FB = 1.3 V 3.4 4.5 mA Shutdown Current (Iin) SD = 0 V 57 85 µA 0.7 0.9 V SHUTDOWN THRESHOLDS Shutdown Threshold (SD Increasing) 0.47 Shutdown Hysteresis 0.1 Standby Threshold (Standby Increasing) 1.17 Standby Hysteresis SD Pull-up Current Source 1.225 V 1.28 V 0.1 V 5 µA SWITCH CHARACTERISTICS Buck Switch Rds(on) (Q0) 170 380 mΩ Buck Switch Rds(on) (Q1) 170 340 mΩ BOOST UVLO 3.8 BOOST UVLO Hysteresis V 0.56 V Pre-charge Switch Rds(on) 70 Ω Pre-charge Switch on-time 265 ns CURRENT LIMIT Cycle by Cycle Current Limit (Q0) (1) RAMP = 0 V 3.6 4.2 5.5 A Min and Max limits are 100% production tested at 25°C. Limits over the operating temperature range are ensured through correlation using Statistical Quality Control (SQC) methods. Limits are used to calculate Texas Instruments' Average Outgoing Quality Level (AOQL). Copyright © 2007–2014, Texas Instruments Incorporated Product Folder Links: LM5576 LM5576-Q1 Submit Documentation Feedback 5 LM5576, LM5576-Q1 SNVS447J – JANUARY 2007 – REVISED NOVEMBER 2014 www.ti.com Electrical Characteristics (continued) Typical values correspond to TJ = 25°C, VIN = 48 V, RT = 32.4kΩ. Minimum and maximum limits apply over –40°C to 125°C junction temperature range unless otherwise stated.(1) PARAMETER TEST CONDITIONS Cycle by Cycle Current Limit (Q1) RAMP = 0 V Cycle by Cycle Current Limit Delay RAMP = 2.5 V MIN TYP MAX 3.6 4.2 5.1 100 UNIT A ns SOFT-START SS Current Source 7 10 14 µA 180 200 220 kHz 425 485 545 kHz OSCILLATOR Frequency1 Frequency2 RT = 11kΩ SYNC Source Impedance 11 kΩ SYNC Sink Impedance 110 Ω SYNC Threshold (falling) 1.3 SYNC Frequency RT = 11kΩ SYNC Pulse Width Minimum V 550 kHz 15 ns RAMP GENERATOR Ramp Current 1 VIN = 60 V, VOUT=10 V 235 275 315 µA Ramp Current 2 VIN = 10 V, VOUT=10 V 18 25 32 µA Forced Off-time (Q0) 390 500 590 ns Forced Off-time (Q1) 416 500 575 ns PWM COMPARATOR Min On-time 80 ns COMP to PWM Comparator Offset 0.7 V ERROR AMPLIFIER Feedback Voltage (Q0) Vfb = COMP 1.207 1.225 1.243 Feedback Voltage (Q1) Vfb = COMP 1.207 1.225 1.243 FB Bias Current 17 DC Gain 70 COMP Sink / Source Current 3 Unity Gain Bandwidth V V nA dB mA 3 MHz 42 mΩ DIODE SENSE RESISTANCE DSENSE THERMAL SHUTDOWN Tsd Thermal Shutdown Threshold (Q0) 180 °C Tsd Thermal Shutdown Threshold (Q1) 165 °C 25 °C Thermal Shutdown Hysteresis 6 Submit Documentation Feedback Copyright © 2007–2014, Texas Instruments Incorporated Product Folder Links: LM5576 LM5576-Q1 LM5576, LM5576-Q1 www.ti.com SNVS447J – JANUARY 2007 – REVISED NOVEMBER 2014 6.7 Typical Characteristics OSCILLATOR FREQUENCY (kHz) 1000 100 10 1 10 100 1000 RT (k:) NORMALIZED OSCILLATOR FREQUENCY Figure 1. Oscillator Frequency vs RT Figure 2. Oscillator Frequency vs Temperature (Q0) FOSC = 200kHz 1.010 1.005 1.000 0.995 0.990 -50 -25 0 25 50 75 100 125 TEMPERATURE (oC) Figure 4. Soft Start Current vs Temperature (Q0) 1.10 8 1.05 6 VCC (V) NORMALIZED SOFTSTART CURRENT Figure 3. Oscillator Frequency vs Temperature (Q1) FOSC = 200kHz 1.00 0.95 0.90 -50 4 2 -25 0 25 50 75 100 125 0 0 TEMPERATURE (oC) 4 8 12 16 20 24 ICC (mA) Figure 5. Soft Start Current vs Temperature (Q1) Copyright © 2007–2014, Texas Instruments Incorporated Product Folder Links: LM5576 LM5576-Q1 Figure 6. VCC vs ICC VIN = 12 V Submit Documentation Feedback 7 LM5576, LM5576-Q1 SNVS447J – JANUARY 2007 – REVISED NOVEMBER 2014 www.ti.com Typical Characteristics (continued) 10 50 225 40 180 30 135 4 Ramp Down PHASE 10 45 0 0 GAIN -10 2 90 PHASE (°) 6 20 GAIN (dB) VCC (V) 8 -45 Ramp Up -20 0 0 2 4 6 8 -90 -30 10k 10 100k VIN (V) 1M 10M -135 100M FREQUENCY (Hz) Figure 7. VCC vs VIN RL = 7kω Figure 8. Error Amplifier Gain/Phase AVCL = 101 100 90 EFFICIENCY (%) 80 70 60 50 VIN = 24V VIN = 7V VIN = 48V 40 30 VIN = 75V 20 10 0 0.5 1 1.5 2 2.5 3 IOUT (A) Figure 9. Demoboard Efficiency vs IOUT and VIN 8 Submit Documentation Feedback Copyright © 2007–2014, Texas Instruments Incorporated Product Folder Links: LM5576 LM5576-Q1 LM5576, LM5576-Q1 www.ti.com SNVS447J – JANUARY 2007 – REVISED NOVEMBER 2014 7 Detailed Description 7.1 Overview The LM5576 switching regulator features all of the functions necessary to implement an efficient high voltage buck regulator using a minimum of external components. This easy to use regulator integrates a 75 V N-Channel buck switch with an output current capability of 3 Amps. The regulator control method is based on current mode control utilizing an emulated current ramp. Peak current mode control provides inherent line voltage feed-forward, cycle-by-cycle current limiting, and ease of loop compensation. The use of an emulated control ramp reduces noise sensitivity of the pulse-width modulation circuit, allowing reliable processing of very small duty cycles necessary in high input voltage applications. The operating frequency is user programmable from 50 kHz to 500 kHz. An oscillator synchronization pin allows multiple LM5576 regulators to self synchronize or be synchronized to an external clock. The output voltage can be set as low as 1.225 V. Fault protection features include, current limiting, thermal shutdown and remote shutdown capability. The device is available in the HTSSOP-20 package featuring an exposed pad to aid thermal dissipation. The functional block diagram and typical application of the LM5576 are shown in the Functional Block Diagram section. The LM5576 can be applied in numerous applications to efficiently step-down a high, unregulated input voltage. The device is well suited for telecom, industrial and automotive power bus voltage ranges. 7.2 Functional Block Diagram VIN 7V ± 75V C1 2.2 3, 4 VIN C2 2.2 5 PA R1 OPEN LM5576 7V REGULATOR 1.225V 2 SD STANDBY VCC SHUTDOWN 0.7V SD C12 OPEN R2 OPEN 11 SS BST UVLO C7 0.022 DRIVER S Q 1.225V 20 VIN DIS CLK 10 PA C4 0.01 C8 0.47 THERMAL SHUTDOWN UVLO 1 R Q LEVEL SHIFT PWM 0.7V PRE 19 C_LIMIT 7 FB C6 open C5 0.01 R4 49.9k ERROR AMP 0.5V/A + 6 COMP CLK Ir OSCILLATOR SYNC 5 RT 8 RAMP 9 SYNC D1 CSHD6-100C CLK 2.1V VIN L1 33 PH SW 17, 18 TRACK SAMPLE and HOLD RAMP GENERATOR Ir = (5 PA x (VIN ± VOUT)) + 25 PA IS C11 330p R7 10 C10 150 5V C9 22 15, 16 PGND 13, 14 AGND 10 CLK OUT 12 R5 5.11k R6 1.65k C3 330p R3 21k 7.3 Feature Description 7.3.1 Shutdown / Standby The LM5576 contains a dual level Shutdown (SD) circuit. When the SD pin voltage is below 0.7 V, the regulator is in a low current shutdown mode. When the SD pin voltage is greater than 0.7 V but less than 1.225 V, the regulator is in standby mode. In standby mode the VCC regulator is active but the output switch is disabled. When the SD pin voltage exceeds 1.225 V, the output switch is enabled and normal operation begins. An internal 5 µA pull-up current source configures the regulator to be fully operational if the SD pin is left open. Copyright © 2007–2014, Texas Instruments Incorporated Product Folder Links: LM5576 LM5576-Q1 Submit Documentation Feedback 9 LM5576, LM5576-Q1 SNVS447J – JANUARY 2007 – REVISED NOVEMBER 2014 www.ti.com Feature Description (continued) An external set-point voltage divider from VIN to GND can be used to set the operational input range of the regulator. The divider must be designed such that the voltage at the SD pin will be greater than 1.225 V when VIN is in the desired operating range. The internal 5 µA pull-up current source must be included in calculations of the external set-point divider. Hysteresis of 0.1 V is included for both the shutdown and standby thresholds. The SD pin is internally clamped with a 1 kΩ resistor and an 8 V zener clamp. The voltage at the SD pin should never exceed 14 V. If the voltage at the SD pin exceeds 8 V, the bias current will increase at a rate of 1 mA/V. The SD pin can also be used to implement various remote enable / disable functions. Pulling the SD pin below the 0.7 V threshold totally disables the controller. If the SD pin voltage is above 1.225 V the regulator will be operational. 7.3.2 Soft-Start The soft-start feature allows the regulator to gradually reach the initial steady state operating point, thus reducing start-up stresses and surges. The internal soft-start current source, set to 10 µA, gradually increases the voltage of an external soft-start capacitor connected to the SS pin. The soft-start capacitor voltage is connected to the reference input of the error amplifier. Various sequencing and tracking schemes can be implemented using external circuits that limit or clamp the voltage level of the SS pin. In the event a fault is detected (over-temperature, VCC UVLO, SD) the soft-start capacitor will be discharged. When the fault condition is no longer present a new soft-start sequence will commence. 7.3.3 Thermal Protection Internal Thermal Shutdown circuitry is provided to protect the integrated circuit in the event the maximum junction temperature is exceeded. When activated, typically at 165°C (Q1 version) and 180°C (Q0 version), the controller is forced into a low power reset state, disabling the output driver and the bias regulator. This feature is provided to prevent catastrophic failures from accidental device overheating. 7.4 Device Functional Modes 7.4.1 High Voltage Start-Up Regulator The LM5576 contains a dual-mode internal high voltage startup regulator that provides the CC bias supply for the PWM controller and boot-strap MOSFET gate driver. The input pin (VIN) can be connected directly to the input voltage, as high as 75 Volts. For input voltages below 9 V, a low dropout switch connects VCC directly to VIN. In this supply range, VCC is approximately equal to VIN. For VIN voltage greater than 9 V, the low dropout switch is disabled and the VCC regulator is enabled to maintain VCC at approximately 7 V. The wide operating range of 6 V to 75 V is achieved through the use of this dual mode regulator. The output of the VCC regulator is current limited to 25 mA. Upon power up, the regulator sources current into the capacitor connected to the VCC pin. When the voltage at the VCC pin exceeds the VCC UVLO threshold of 5.35 V and the SD pin is greater than 1.225 V, the output switch is enabled and a soft-start sequence begins. The output switch remains enabled until VCC falls below 5.0 V or the SD pin falls below 1.125 V. An auxiliary supply voltage can be applied to the VCC pin to reduce the IC power dissipation. If the auxiliary voltage is greater than 7.3 V, the internal regulator will essentially shut off, reducing the IC power dissipation. The VCC regulator series pass transistor includes a diode between VCC and VIN that should not be forward biased in normal operation. Therefore the auxiliary VCC voltage should never exceed the VIN voltage. In high voltage applications extra care should be taken to ensure the VIN pin does not exceed the absolute maximum voltage rating of 76 V. During line or load transients, voltage ringing on the VIN line that exceeds the Absolute Maximum Ratings can damage the IC. Both careful PC board layout and the use of quality bypass capacitors located close to the VIN and GND pins are essential. 10 Submit Documentation Feedback Copyright © 2007–2014, Texas Instruments Incorporated Product Folder Links: LM5576 LM5576-Q1 LM5576, LM5576-Q1 www.ti.com SNVS447J – JANUARY 2007 – REVISED NOVEMBER 2014 Device Functional Modes (continued) VIN 9V VCC 7V 5.25V Internal Enable Signal Figure 10. VIN and VCC Sequencing 7.4.2 Oscillator and Sync Capability The LM5576 oscillator frequency is set by a single external resistor connected between the RT pin and the AGND pin. The RT resistor should be located very close to the device and connected directly to the pins of the IC (RT and AGND).To set a desired oscillator frequency (F), the necessary value for the RT resistor can be calculated from the following equation: 1 - 580 x 10-9 F RT = 135 x 10-12 (1) The SYNC pin can be used to synchronize the internal oscillator to an external clock. The external clock must be of higher frequency than the free-running frequency set by the RT resistor. A clock circuit with an open drain output is the recommended interface from the external clock to the SYNC pin. The clock pulse duration should be greater than 15 ns. LM5576 SYNC SW SYNC AGND CLK SW 500 ns Figure 11. Sync From External Clock Copyright © 2007–2014, Texas Instruments Incorporated Product Folder Links: LM5576 LM5576-Q1 Submit Documentation Feedback 11 LM5576, LM5576-Q1 SNVS447J – JANUARY 2007 – REVISED NOVEMBER 2014 www.ti.com Device Functional Modes (continued) LM5576 SYNC LM5576 SYNC UP TO 5 TOTAL DEVICES Figure 12. Sync From Multiple Devices Multiple LM5576 devices can be synchronized together simply by connecting the SYNC pins together. In this configuration all of the devices will be synchronized to the highest frequency device. The diagram in Figure 13 illustrates the SYNC input/output features of the LM5576. The internal oscillator circuit drives the SYNC pin with a strong pull-down / weak pull-up inverter. When the SYNC pin is pulled low either by the internal oscillator or an external clock, the ramp cycle of the oscillator is terminated and a new oscillator cycle begins. Thus, if the SYNC pins of several LM5576 ICs are connected together, the IC with the highest internal clock frequency will pull the connected SYNC pins low first and terminate the oscillator ramp cycles of the other ICs. The LM5576 with the highest programmed clock frequency will serve as the master and control the switching frequency of the all the devices with lower oscillator frequency. 5V SYNC 10k I = f(RT) 2.5V Q S Q R DEADTIME ONE-SHOT Figure 13. Simplified Oscillator Block Diagram and Sync I/O Circuit 7.4.3 Error Amplifier and PWM Comparator The internal high gain error amplifier generates an error signal proportional to the difference between the regulated output voltage and an internal precision reference (1.225 V). The output of the error amplifier is connected to the COMP pin allowing the user to provide loop compensation components, generally a type II network, as illustrated in the Functional Block Diagram section. This network creates a pole at DC, a zero and a noise reducing high frequency pole. The PWM comparator compares the emulated current sense signal from the RAMP generator to the error amplifier output voltage at the COMP pin. 12 Submit Documentation Feedback Copyright © 2007–2014, Texas Instruments Incorporated Product Folder Links: LM5576 LM5576-Q1 LM5576, LM5576-Q1 www.ti.com SNVS447J – JANUARY 2007 – REVISED NOVEMBER 2014 Device Functional Modes (continued) 7.4.4 Ramp Generator The ramp signal used in the pulse width modulator for current mode control is typically derived directly from the buck switch current. This switch current corresponds to the positive slope portion of the output inductor current. Using this signal for the PWM ramp simplifies the control loop transfer function to a single pole response and provides inherent input voltage feed-forward compensation. The disadvantage of using the buck switch current signal for PWM control is the large leading edge spike due to circuit parasitics that must be filtered or blanked. Also, the current measurement may introduce significant propagation delays. The filtering, blanking time and propagation delay limit the minimum achievable pulsewidth. In applications where the input voltage may be relatively large in comparison to the output voltage, controlling small pulsewidths and duty cycles is necessary for regulation. The LM5576 utilizes a unique ramp generator, which does not actually measure the buck switch current but rather reconstructs the signal. Reconstructing or emulating the inductor current provides a ramp signal to the PWM comparator that is free of leading edge spikes and measurement or filtering delays. The current reconstruction is comprised of two elements; a sample & hold DC level and an emulated current ramp. RAMP t (5m ´ (VIN - VOUT ) - 25m )´ C ON RAMP tON Sample and Hold DC Level 0.5V/A Figure 14. Composition of Current Sense Signal The sample & hold DC level illustrated in Figure 14 is derived from a measurement of the re-circulating Schottky diode anode current. The re-circulating diode anode should be connected to the IS pin. The diode current flows through an internal current sense resistor between the IS and PGND pins. The voltage level across the sense resistor is sampled and held just prior to the onset of the next conduction interval of the buck switch. The diode current sensing and sample & hold provide the DC level of the reconstructed current signal. The positive slope inductor current ramp is emulated by an external capacitor connected from the RAMP pin to AGND and an internal voltage controlled current source. The ramp current source that emulates the inductor current is a function of the VIN and VOUT voltages per Equation 2: IRAMP = (5 µ x (VIN – VOUT)) + 25 µA (2) Proper selection of the RAMP capacitor depends upon the selected value of the output inductor. The value of CRAMP can be selected from: CRAMP = L x 10-5 where • L is the value of the output inductor in Henrys Copyright © 2007–2014, Texas Instruments Incorporated Product Folder Links: LM5576 LM5576-Q1 (3) Submit Documentation Feedback 13 LM5576, LM5576-Q1 SNVS447J – JANUARY 2007 – REVISED NOVEMBER 2014 www.ti.com Device Functional Modes (continued) With this value, the scale factor of the emulated current ramp will be approximately equal to the scale factor of the DC level sample and hold ( 0.5 V / A). The CRAMP capacitor should be located very close to the device and connected directly to the pins of the IC (RAMP and AGND). For duty cycles greater than 50%, peak current mode control circuits are subject to sub-harmonic oscillation. Sub-harmonic oscillation is normally characterized by observing alternating wide and narrow pulses at the switch node. Adding a fixed slope voltage ramp (slope compensation) to the current sense signal prevents this oscillation. The 25 µA of offset current provided from the emulated current source adds some fixed slope to the ramp signal. In some high output voltage, high duty cycle applications, additional slope may be required. In these applications, a pull-up resistor may be added between the VCC and RAMP pins to increase the ramp slope compensation. For VOUT > 7.5 V: Calculate optimal slope current, IOS = VOUT x 5 µA/V. For example, at VOUT = 10 V, IOS = 50 µA. Install a resistor from the RAMP pin to VCC: RRAMP = VCC / (IOS - 25 µA) (4) VCC RRAMP RAMP CRAMP Figure 15. RRAMP to VCC for VOUT > 7.5 V Note that the emulated ramp signal on CRAMP is applied to the current limit comparator as described in the Current Limit section below. Increasing the ramp slope will result in lower current limit threshold. This can lower the output current capability of the part to less than 3 A in some conditions. The resulting current limit threshold can be calculated by the following equation: where • • • • • • • • • • VCL = 2.1 V gm = 5 µA/V Ioffset = 25 µA A x Rs = 0.5 V/A VCC = 7 V T = switching period D = duty cycle (approximately VOUT / VIN) L = inductor value CRAMP = ramp capacitor value RRAMP = ramp resistor value (5) If the recommended CRAMP and RRAMP values are used, then the following simplified equation calculates the current limit threshold: 14 Submit Documentation Feedback Copyright © 2007–2014, Texas Instruments Incorporated Product Folder Links: LM5576 LM5576-Q1 LM5576, LM5576-Q1 www.ti.com SNVS447J – JANUARY 2007 – REVISED NOVEMBER 2014 Device Functional Modes (continued) (6) 7.4.5 Maximum Duty Cycle / Input Drop-Out Voltage There is a forced off-time of 500 ns implemented each cycle to ensure sufficient time for the diode current to be sampled. This forced off-time limits the maximum duty cycle of the buck switch. The maximum duty cycle will vary with the operating frequency. DMAX = 1 - Fs x 500ns where • Fs is the oscillator frequency (7) Limiting the maximum duty cycle will raise the input dropout voltage. The input dropout voltage is the lowest input voltage required to maintain regulation of the output voltage. An approximation of the input dropout voltage is: Vout + VD VinMIN = 1 - Fs x 500 ns where • VD is the voltage drop across the re-circulatory diode (8) Operating at high switching frequency raises the minimum input voltage necessary to maintain regulation. 7.4.6 Boost Pin The LM5576 integrates an N-Channel buck switch and associated floating high voltage level shift / gate driver. This gate driver circuit works in conjunction with an internal diode and an external bootstrap capacitor. A 0.022 µF ceramic capacitor, connected with short traces between the BST pin and SW pin, is recommended. During the off-time of the buck switch, the SW pin voltage is approximately -0.5 V and the bootstrap capacitor is charged from VCC through the internal bootstrap diode. When operating with a high PWM duty cycle, the buck switch will be forced off each cycle for 500 ns to ensure that the bootstrap capacitor is recharged. Under very light load conditions or when the output voltage is pre-charged, the SW voltage will not remain low during the off-time of the buck switch. If the inductor current falls to zero and the SW pin rises, the bootstrap capacitor will not receive sufficient voltage to operate the buck switch gate driver. For these applications, the PRE pin can be connected to the SW pin to pre-charge the bootstrap capacitor. The internal pre-charge MOSFET and diode connected between the PRE pin and PGND turns on each cycle for 265 ns just prior to the onset of a new switching cycle. If the SW pin is at a normal negative voltage level (continuous conduction mode), then no current will flow through the pre-charge MOSFET/diode. For output voltages above 5 V, a minimum load current may still be required to ensure that the SW voltage is pulled low enough to recharge the bootstrap capacitor. 7.4.7 Current Limit The LM5576 contains a unique current monitoring scheme for control and over-current protection. When set correctly, the emulated current sense signal provides a signal which is proportional to the buck switch current with a scale factor of 0.5 V / A. The emulated ramp signal is applied to the current limit comparator. If the emulated ramp signal exceeds 2.1 V (4.2 A) the present current cycle is terminated (cycle-by-cycle current limiting). In applications with small output inductance and high input voltage the switch current may overshoot due to the propagation delay of the current limit comparator. If an overshoot should occur, the diode current sampling circuit will detect the excess inductor current during the off-time of the buck switch. If the sample & hold DC level exceeds the 2.1 V current limit threshold, the buck switch will be disabled and skip pulses until the diode current sampling circuit detects the inductor current has decayed below the current limit threshold. This approach prevents current runaway conditions due to propagation delays or inductor saturation since the inductor current is forced to decay following any current overshoot. Copyright © 2007–2014, Texas Instruments Incorporated Product Folder Links: LM5576 LM5576-Q1 Submit Documentation Feedback 15 LM5576, LM5576-Q1 SNVS447J – JANUARY 2007 – REVISED NOVEMBER 2014 www.ti.com 8 Application and Implementation NOTE Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality. 8.1 Application Information 8.1.1 Bias Power Dissipation Reduction Buck regulators operating with high input voltage can dissipate an appreciable amount of power for the bias of the IC. The VCC regulator must step-down the input voltage VIN to a nominal VCC level of 7 V. The large voltage drop across the VCC regulator translates into a large power dissipation within the regulator. There are several techniques that can significantly reduce this bias regulator power dissipation. Figure 16 and VCC Figure 17 depict two methods to bias the IC from the output voltage. In each case the internal VCC regulator is used to initially bias the VCC pin. After the output voltage is established, the VCC pin potential is raised above the nominal 7 V regulation level, which effectively disables the internal VCC regulator. The voltage applied to the VCC pin should never exceed 14 V. The VCC voltage should never be larger than the VIN voltage. LM5576 BST VOUT SW L1 COUT D1 IS GND VCC D2 Figure 16. VCC Bias From VOUT for 8 V < VOUT < 14 V 16 Submit Documentation Feedback Copyright © 2007–2014, Texas Instruments Incorporated Product Folder Links: LM5576 LM5576-Q1 LM5576, LM5576-Q1 www.ti.com SNVS447J – JANUARY 2007 – REVISED NOVEMBER 2014 Application Information (continued) LM5576 BST VOUT L1 SW D1 COUT IS GND D2 VCC Figure 17. VCC Bias With Additional Winding on the Output Inductor 8.2 Typical Application VIN 7V ± 75V C1 2.2 3, 4 VIN C2 2.2 5 PA R1 OPEN LM5576 7V REGULATOR 1.225V 2 SD STANDBY VCC SHUTDOWN 0.7V SD C12 OPEN R2 OPEN 11 SS C8 0.47 THERMAL SHUTDOWN UVLO BST UVLO C4 0.01 C7 0.022 DRIVER S Q 1.225V 20 VIN DIS CLK 10 PA 1 R Q LEVEL SHIFT PWM 0.7V PRE 19 C_LIMIT 7 FB C6 open C5 0.01 R4 49.9k ERROR AMP 0.5V/A + 6 COMP CLK Ir OSCILLATOR SYNC 5 RT 8 RAMP 9 SYNC D1 CSHD6-100C CLK 2.1V VIN L1 33 PH SW 17, 18 TRACK SAMPLE and HOLD RAMP GENERATOR Ir = (5 PA x (VIN ± VOUT)) + 25 PA IS C11 330p R7 10 C10 150 5V C9 22 15, 16 PGND 13, 14 AGND 10 CLK OUT 12 R5 5.11k R6 1.65k C3 330p R3 21k Figure 18. Typical Application 8.2.1 Design Requirements The circuit shown in Figure 18 is configured for the following specifications: • VOUT = 5 V • VIN = 7 V to 75 V • Fs = 300 kHz • Minimum load current (for CCM) = 250 mA • Maximum load current = 3 A Copyright © 2007–2014, Texas Instruments Incorporated Product Folder Links: LM5576 LM5576-Q1 Submit Documentation Feedback 17 LM5576, LM5576-Q1 SNVS447J – JANUARY 2007 – REVISED NOVEMBER 2014 www.ti.com Typical Application (continued) 8.2.2 Detailed Design Procedure 8.2.2.1 External Components The procedure for calculating the external components is illustrated with the following design example. The Bill of Materials for this design is listed in Table 1. Table 1. 5 V, 3 A Demo Board Bill of Materials ITEM PART NUMBER DESCRIPTION VALUE C 1 C4532X7R2A225M CAPACITOR, CER, TDK 2.2 µ, 100 V C 2 C4532X7R2A225M CAPACITOR, CER, TDK 2.2 µ, 100 V C 3 C0805C331G1GAC CAPACITOR, CER, KEMET 330 p, 100 V C 4 C2012X7R2A103K CAPACITOR, CER, TDK 0.01 µ, 100 V C 5 C2012X7R2A103K CAPACITOR, CER, TDK 0.01 µ, 100 V C 6 OPEN NOT USED C 7 C2012X7R2A223K CAPACITOR, CER, TDK 0.022 µ, 100 V C 8 C2012X7R1C474M CAPACITOR, CER, TDK 0.47 µ, 16 V C 9 C3225X7R1C226M CAPACITOR, CER, TDK 22 µ, 16 V C 10 EEFHE0J151R CAPACITOR, SP, PANASONIC 150 µ, 6.3 V C 11 C0805C331G1GAC CAPACITOR, CER, KEMET 330 p, 100 V C 12 OPEN NOT USED D 1 CSHD6-100C DIODE, 100V, CENTRAL 6CWQ10FN DIODE, 100V, IR (D1-ALT) L 1 DR127-330 INDUCTOR, COOPER R 1 OPEN NOT USED R 2 OPEN NOT USED R 3 CRCW08052102F RESISTOR 21 kΩ R 4 CRCW08054992F RESISTOR 49.9 kΩ R 5 CRCW08055111F RESISTOR 5.11 kΩ R 6 CRCW08051651F RESISTOR 1.65 kΩ R 7 CRCW2512100J RESISTOR 10, 1 W U 1 LM5576 REGULATOR, TEXAS INSTRUMENTS 33 µH 8.2.2.2 R3 (RT) RT sets the oscillator switching frequency. Generally, higher frequency applications are smaller but have higher losses. Operation at 300 kHz was selected for this example as a reasonable compromise for both small size and high efficiency. The value of RT for 300 kHz switching frequency can be calculated as follows: RT = ææ 1 çç 3 è è 300 ´ 10 ö -9 ö ÷ - 580 ´ 10 ÷ ø ø 135 ´ 10-12 (9) The nearest standard value of 21 kΩ was chosen for RT. 8.2.2.3 L1 The inductor value is determined based on the operating frequency, load current, ripple current, and the minimum and maximum input voltage (VIN(min), VIN(max)). 18 Submit Documentation Feedback Copyright © 2007–2014, Texas Instruments Incorporated Product Folder Links: LM5576 LM5576-Q1 LM5576, LM5576-Q1 www.ti.com SNVS447J – JANUARY 2007 – REVISED NOVEMBER 2014 L1 Current IPK+ IRIPPLE IO IPK- 1/Fs 0 mA Figure 19. Inductor Current Waveform To keep the circuit in continuous conduction mode (CCM), the maximum ripple current IRIPPLE should be less than twice the minimum load current, or 0.5 Ap-p. Using this value of ripple current, the value of inductor (L1) is calculated using the following: L1 = ( VOUT ´ VIN(max ) - VOUT L1 = ) IRIPPLE ´ FS ´ VIN(max ) (10) 5V x (75V ± 5V) = 31 PH 0.5A x 300 kHz x 75V (11) This procedure provides a guide to select the value of L1. The nearest standard value (33 µH) will be used. L1 must be rated for the peak current (IPK+) to prevent saturation. During normal loading conditions, the peak current occurs at maximum load current plus maximum ripple. During an overload condition the peak current is limited to 4.2 A nominal (5.1 A maximum). The selected inductor (see Table 1) has a conservative 6.2 Amp saturation current rating. For this manufacturer, the saturation rating is defined as the current necessary for the inductance to reduce by 30%, at 20°C. 8.2.2.4 C3 (CRAMP) With the inductor value selected, the value of C3 (CRAMP) necessary for the emulation ramp circuit is: CRAMP = L x 10-5 (12) Where: L is in Henrys With L1 selected for 33 µH the recommended value for C3 is 330 pF. 8.2.2.5 C9, C10 The output capacitors, C9 and C10, smooth the inductor ripple current and provide a source of charge for transient loading conditions. For this design a 22-µF ceramic capacitor and a 150-µF SP organic capacitor were selected. The ceramic capacitor provides ultra low ESR to reduce the output ripple voltage and noise spikes, while the SP capacitor provides a large bulk capacitance in a small volume for transient loading conditions. An approximation for the output ripple voltage is: § ¨ © § 1 'VOUT = 'IL x ¨ESR + 8 x F S x COUT © (13) Copyright © 2007–2014, Texas Instruments Incorporated Product Folder Links: LM5576 LM5576-Q1 Submit Documentation Feedback 19 LM5576, LM5576-Q1 SNVS447J – JANUARY 2007 – REVISED NOVEMBER 2014 www.ti.com 8.2.2.6 D1 A Schottky type re-circulating diode is required for all LM5576 applications. Ultra-fast diodes are not recommended and may result in damage to the IC due to reverse recovery current transients. The near ideal reverse recovery characteristics and low forward voltage drop are particularly important diode characteristics for high input voltage and low output voltage applications common to the LM5576. The reverse recovery characteristic determines how long the current surge lasts each cycle when the buck switch is turned on. The reverse recovery characteristics of Schottky diodes minimize the peak instantaneous power in the buck switch occurring during turn-on each cycle. The resulting switching losses of the buck switch are significantly reduced when using a Schottky diode. The reverse breakdown rating should be selected for the maximum VIN, plus some safety margin. The forward voltage drop has a significant impact on the conversion efficiency, especially for applications with a low output voltage. “Rated” current for diodes vary widely from various manufacturers. The worst case is to assume a short circuit load condition. In this case the diode will carry the output current almost continuously. For the LM5576 this current can be as high as 4.2 A. Assuming a worst case 1 V drop across the diode, the maximum diode power dissipation can be as high as 4.2 W. For the reference design a 100 V Schottky in a DPAK package was selected. 8.2.2.7 C1, C2 The regulator supply voltage has a large source impedance at the switching frequency. Good quality input capacitors are necessary to limit the ripple voltage at the VIN pin while supplying most of the switch current during the on-time. When the buck switch turns on, the current into the VIN pin steps to the lower peak of the inductor current waveform, ramps up to the peak value, then drops to zero at turn-off. The average current into VIN during the on-time is the load current. The input capacitance should be selected for RMS current rating and minimum ripple voltage. A good approximation for the required ripple current rating necessary is IRMS > IOUT / 2. Quality ceramic capacitors with a low ESR should be selected for the input filter. To allow for capacitor tolerances and voltage effects, two 2.2-µF, 100 V ceramic capacitors will be used. If step input voltage transients are expected near the maximum rating of the LM5576, a careful evaluation of ringing and possible spikes at the device VIN pin should be completed. An additional damping network or input voltage clamp may be required in these cases. 8.2.2.8 C8 The capacitor at the VCC pin provides noise filtering and stability for the VCC regulator. The recommended value of C8 should be no smaller than 0.1-µF, and should be a good quality, low ESR, ceramic capacitor. A value of 0.47-µF was selected for this design. 8.2.2.9 C7 The bootstrap capacitor between the BST and the SW pins supplies the gate current to charge the buck switch gate at turn-on. The recommended value of C7 is 0.022-µF, and should be a good quality, low ESR, ceramic capacitor. 8.2.2.10 C4 The capacitor at the SS pin determines the soft-start time, i.e. the time for the reference voltage and the output voltage, to reach the final regulated value. The time is determined from: C4 ´ 1.225 V tSS = 10 mA (14) For this application, a C4 value of 0.01-µF was chosen which corresponds to a soft-start time of 1 ms. 8.2.2.11 R5, R6 R5 and R6 set the output voltage level, the ratio of these resistors is calculated from: R5/R6 = (VOUT / 1.225 V) - 1 20 Submit Documentation Feedback (15) Copyright © 2007–2014, Texas Instruments Incorporated Product Folder Links: LM5576 LM5576-Q1 LM5576, LM5576-Q1 www.ti.com SNVS447J – JANUARY 2007 – REVISED NOVEMBER 2014 For a 5 V output, the R5/R6 ratio calculates to 3.082. The resistors should be chosen from standard value resistors, a good starting point is selection in the range of 1.0 kΩ - 10 kΩ. Values of 5.11 kΩ for R5, and 1.65 kΩ for R6 were selected. 8.2.2.12 R1, R2, C12 A voltage divider can be connected to the SD pin to set a minimum operating voltage VIN(min) for the regulator. If this feature is required, the easiest approach to select the divider resistor values is to select a value for R1 (between 10 kΩ and 100 kΩ recommended) then calculate R2 from: § ¨ © § R1 R2 = 1.225 x ¨ -6 © VIN(min) + (5 x 10 x R1) ± 1.225 (16) Capacitor C12 provides filtering for the divider. The voltage at the SD pin should never exceed 8 V, when using an external set-point divider it may be necessary to clamp the SD pin at high input voltage conditions. The reference design utilizes the full range of the LM5576 (6V to 75V); therefore these components can be omitted. With the SD pin open circuit the LM5576 responds once the VCC UVLO threshold is satisfied. 8.2.2.13 R7, C11 A snubber network across the power diode reduces ringing and spikes at the switching node. Excessive ringing and spikes can cause erratic operation and couple spikes and noise to the output. Voltage spikes beyond the rating of the LM5576 or the re-circulating diode can damage these devices. Selecting the values for the snubber is best accomplished through empirical methods. First, make sure the lead lengths for the snubber connections are very short. For the current levels typical for the LM5576 a resistor value between 5 and 20 Ohms is adequate. Increasing the value of the snubber capacitor results in more damping but higher losses. Select a minimum value of C11 that provides adequate damping of the SW pin waveform at high load. 8.2.2.14 R4, C5, C6 These components configure the error amplifier gain characteristics to accomplish a stable overall loop gain. One advantage of current mode control is the ability to close the loop with only two feedback components, R4 and C5. The overall loop gain is the product of the modulator gain and the error amplifier gain. The DC modulator gain of the LM5576 is as follows: DC Gain(MOD) = Gm(MOD) x RLOAD = 2 x RLOAD (17) The dominant low frequency pole of the modulator is determined by the load resistance (RLOAD,) and output capacitance (COUT). The corner frequency of this pole is: fp(MOD) = 1 / (2π RLOAD COUT) (18) For RLOAD = 5 Ω and COUT = 177 µF then fp(MOD) = 180 Hz DC Gain(MOD) = 2 x 5 = 10 = 20 dB For the design example of Figure 18 the following modulator gain vs. frequency characteristic was measured as shown in Figure 20. Copyright © 2007–2014, Texas Instruments Incorporated Product Folder Links: LM5576 LM5576-Q1 Submit Documentation Feedback 21 LM5576, LM5576-Q1 SNVS447J – JANUARY 2007 – REVISED NOVEMBER 2014 www.ti.com REF LEVEL 0.000 dB 0.0 deg /DIV 10.000 dB 45.000 deg GAIN 0 PHASE 100 1k START 50.000 Hz 10k STOP 50 000.000 Hz Figure 20. Gain and Phase of Modulator R = 5 Ohms and C = 177 µF Loadout Components R4 and C5 configure the error amplifier as a type II configuration which has a pole at DC and a zero at fZ = 1 / (2πR4C5). The error amplifier zero cancels the modulator pole leaving a single pole response at the crossover frequency of the loop gain. A single pole response at the crossover frequency yields a very stable loop with 90 degrees of phase margin. For the design example, a target loop bandwidth (crossover frequency) of 20 kHz was selected. The compensation network zero (fZ) should be selected at least an order of magnitude less than the target crossover frequency. This constrains the product of R4 and C5 for a desired compensation network zero 1 / (2π R4 C5) to be less than 2 kHz. Increasing R4, while proportionally decreasing C5, increases the error amp gain. Conversely, decreasing R4 while proportionally increasing C5, decreases the error amp gain. For the design example C5 was selected for 0.01-µF and R4 was selected for 49.9 kΩ. These values configure the compensation network zero at 320 Hz. The error amp gain at frequencies greater than fZ is: R4 / R5, which is approximately 10 (20 dB). REF LEVEL 0.000 dB 0.0 deg /DIV 10.000 dB 45.000 deg PHASE GAIN 0 100 1k START 50.000 Hz 10k STOP 50 000.000 Hz Figure 21. Error Amplifier Gain and Phase The overall loop can be predicted as the sum (in dB) of the modulator gain and the error amp gain. 22 Submit Documentation Feedback Copyright © 2007–2014, Texas Instruments Incorporated Product Folder Links: LM5576 LM5576-Q1 LM5576, LM5576-Q1 www.ti.com SNVS447J – JANUARY 2007 – REVISED NOVEMBER 2014 REF LEVEL 0.000 dB 0.0 deg /DIV 10.000 dB 45.000 deg GAIN PHASE 0 100 1k START 50.000 Hz 10k STOP 50 000.000 Hz Figure 22. Overall Loop Gain and Phase If a network analyzer is available, the modulator gain can be measured and the error amplifier gain can be configured for the desired loop transfer function. If a network analyzer is not available, the error amplifier compensation components can be designed with the guidelines given. Step load transient tests can be performed to verify acceptable performance. The step load goal is minimum overshoot with a damped response. C6 can be added to the compensation network to decrease noise susceptibility of the error amplifier. The value of C6 must be sufficiently small since the addition of this capacitor adds a pole in the error amplifier transfer function. This pole must be well beyond the loop crossover frequency. A good approximation of the location of the pole added by C6 is: fp2 = fz x C5 / C6. 8.2.3 Application Curves 100 90 80 EFFICIENCY (%) OSCILLATOR FREQUENCY (kHz) 1000 100 70 60 50 VIN = 24V VIN = 7V VIN = 48V 40 30 VIN = 75V 20 10 10 1 10 100 1000 0 0.5 RT (k:) 1 1.5 2 2.5 3 IOUT (A) Figure 23. Oscillator Frequency vs RT Figure 24. Demoboard Efficiency vs IOUT and VIN Copyright © 2007–2014, Texas Instruments Incorporated Product Folder Links: LM5576 LM5576-Q1 Submit Documentation Feedback 23 LM5576, LM5576-Q1 SNVS447J – JANUARY 2007 – REVISED NOVEMBER 2014 REF LEVEL 0.000 dB 0.0 deg www.ti.com /DIV 10.000 dB 45.000 deg REF LEVEL 0.000 dB 0.0 deg /DIV 10.000 dB 45.000 deg PHASE GAIN GAIN 0 0 PHASE 100 1k START 50.000 Hz 10k 100 1k START 50.000 Hz STOP 50 000.000 Hz Figure 25. Gain and Phase Of Modulator R = 5 Ohms And C = 177 µF Loadout REF LEVEL 0.000 dB 0.0 deg 10k STOP 50 000.000 Hz Figure 26. Error Amplifier Gain and Phase /DIV 10.000 dB 45.000 deg GAIN PHASE 0 100 1k START 50.000 Hz 10k STOP 50 000.000 Hz Figure 27. Overall Loop Gain and Phase 24 Submit Documentation Feedback Copyright © 2007–2014, Texas Instruments Incorporated Product Folder Links: LM5576 LM5576-Q1 LM5576, LM5576-Q1 www.ti.com SNVS447J – JANUARY 2007 – REVISED NOVEMBER 2014 9 Power Supply Recommendations The LM5576 is designed to operate from an input voltage supply range between 6 V and 75 V. This input supply should be able to withstand the maximum input current and maintain a voltage above 6 V. The resistance of the input supply rail should be low enough that an input current transient does not cause a high enough drop at the LM5576 supply voltage that can cause a false UVLO fault triggering and system reset. If the input supply is located more than a few inches from the LM5576 additional bulk capacitance may be required in addition to the ceramic bypass capacitors. The amount of bulk capacitance is not critical, but a 47-μF or 100-μF electrolytic capacitor is a typical choice. 10 Layout 10.1 Layout Guidelines The circuit in Figure 18 serves as both a block diagram of the LM5576 and a typical application board schematic for the LM5576. In a buck regulator there are two loops where currents are switched very fast. The first loop starts from the input capacitors, to the regulator VIN pin, to the regulator SW pin, to the inductor then out to the load. The second loop starts from the output capacitor ground, to the regulator PGND pins, to the regulator IS pins, to the diode anode, to the inductor and then out to the load. Minimizing the loop area of these two loops reduces the stray inductance and minimizes noise and possible erratic operation. A ground plane in the PC board is recommended as a means to connect the input filter capacitors to the output filter capacitors and the PGND pins of the regulator. Connect all of the low power ground connections (CSS, RT, CRAMP) directly to the regulator AGND pin. Connect the AGND and PGND pins together through the topside copper area covering the entire underside of the device. Place several vias in this underside copper area to the ground plane. The two highest power dissipating components are the re-circulating diode and the LM5576 regulator IC. The easiest method to determine the power dissipated within the LM5576 is to measure the total conversion losses (PIN – POUT) then subtract the power losses in the Schottky diode, output inductor and snubber resistor. An approximation for the Schottky diode loss is P = (1-D) x IOUT x VFWD. An approximation for the output inductor power is P = IOUT2 x R x 1.1, where R is the DC resistance of the inductor and the 1.1 factor is an approximation for the AC losses. If a snubber is used, an approximation for the damping resistor power dissipation is P = VIN2 x Fsw x Csnub, where Fsw is the switching frequency and Csnub is the snubber capacitor. The regulator has an exposed thermal pad to aid power dissipation. Adding several vias under the device to the ground plane will greatly reduce the regulator junction temperature. Selecting a diode with an exposed pad will aid the power dissipation of the diode. The most significant variables that affect the power dissipated by the LM5576 are the output current, input voltage and operating frequency. The power dissipated while operating near the maximum output current and maximum input voltage can be appreciable. The operating frequency of the LM5576 evaluation board has been designed for 300 kHz. When operating at 3 A output current with a 70 V input the power dissipation of the LM5576 regulator is approximately 2.5 W. The junction-to-ambient thermal resistance of the LM5576 will vary with the application. The most significant variables are the area of copper in the PC board, the number of vias under the IC exposed pad and the amount of forced air cooling provided. Referring to the evaluation board artwork, the area under the LM5576 (component side) is covered with copper and there are 5 connection vias to the solder side ground plane. Additional vias under the IC will have diminishing value as more vias are added. The integrity of the solder connection from the IC exposed pad to the PC board is critical. Excessive voids will greatly diminish the thermal dissipation capacity. The junction-to-ambient thermal resistance of the LM5576 mounted in the evaluation board varies from 45°C/W with no airflow to 25°C/W with 900 LFM (Linear Feet per Minute). With a 25°C ambient temperature and no airflow, the predicted junction temperature for the LM5576 will be 25 + (45 x 2.5) = 137.5°C. If the evaluation board is operated at 3 A output current and 70 V input voltage for a prolonged period of time the thermal shutdown protection within the IC will activate. The IC will turn off allowing the junction to cool, followed by restart with the soft-start capacitor reset to zero. Copyright © 2007–2014, Texas Instruments Incorporated Product Folder Links: LM5576 LM5576-Q1 Submit Documentation Feedback 25 LM5576, LM5576-Q1 SNVS447J – JANUARY 2007 – REVISED NOVEMBER 2014 www.ti.com Layout Guidelines (continued) One or more of the following modifications will prevent the thermal shutdown from being activated: apply forced air cooling, reduce the maximum input voltage, lower the maximum output current, reduce the operating frequency, add more heat sinking to the PC board. For example, applying forced air cooling of 225 LFM will reduce the LM5576 thermal resistance to approximately 30°C/W. The junction temperature will be reduced to 25 + (2.5 x 30) = 100°C. If the maximum input voltage for the application is 48 V, then the IC power dissipation reduces to 2 W (at 3 A output current). With the same forced air cooling the junction temperature reduces to 25 + (2 x 30) = 85°C. 10.2 Layout Example Figure 28. Silkscreen Figure 29. Component Side 26 Submit Documentation Feedback Copyright © 2007–2014, Texas Instruments Incorporated Product Folder Links: LM5576 LM5576-Q1 LM5576, LM5576-Q1 www.ti.com SNVS447J – JANUARY 2007 – REVISED NOVEMBER 2014 Layout Example (continued) Figure 30. Solder Side Copyright © 2007–2014, Texas Instruments Incorporated Product Folder Links: LM5576 LM5576-Q1 Submit Documentation Feedback 27 LM5576, LM5576-Q1 SNVS447J – JANUARY 2007 – REVISED NOVEMBER 2014 www.ti.com 11 Device and Documentation Support 11.1 Related Links The table below lists quick access links. Categories include technical documents, support and community resources, tools and software, and quick access to sample or buy. Table 2. Related Links PARTS PRODUCT FOLDER SAMPLE & BUY TECHNICAL DOCUMENTS TOOLS & SOFTWARE SUPPORT & COMMUNITY LM5576 Click here Click here Click here Click here Click here LM5576-Q1 Click here Click here Click here Click here Click here 11.2 Trademarks SIMPLE SWITCHER, WEBENCH are registered trademarks of Texas Instruments. All other trademarks are the property of their respective owners. 11.3 Electrostatic Discharge Caution These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 11.4 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. 12 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. 28 Submit Documentation Feedback Copyright © 2007–2014, Texas Instruments Incorporated Product Folder Links: LM5576 LM5576-Q1 PACKAGE OPTION ADDENDUM www.ti.com 30-Sep-2021 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) LM5576MH NRND HTSSOP PWP 20 73 Non-RoHS & Green Call TI Level-1-260C-UNLIM -40 to 125 LM5576 MH LM5576MH/NOPB ACTIVE HTSSOP PWP 20 73 RoHS & Green SN Level-1-260C-UNLIM -40 to 125 LM5576 MH LM5576MHX/NOPB ACTIVE HTSSOP PWP 20 2500 RoHS & Green SN Level-1-260C-UNLIM -40 to 125 LM5576 MH LM5576Q0MH/NOPB ACTIVE HTSSOP PWP 20 73 RoHS & Green SN Level-1-260C-UNLIM LM5576 Q0MH LM5576Q0MHX/NOPB ACTIVE HTSSOP PWP 20 2500 RoHS & Green SN Level-1-260C-UNLIM LM5576 Q0MH LM5576QMH/NOPB ACTIVE HTSSOP PWP 20 73 RoHS & Green SN Level-1-260C-UNLIM -40 to 125 LM5576 QMH LM5576QMHX/NOPB ACTIVE HTSSOP PWP 20 2500 RoHS & Green SN Level-1-260C-UNLIM -40 to 125 LM5576 QMH (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
LM5576MH 价格&库存

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LM5576MH
    •  国内价格
    • 1+78.75200

    库存:62