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LM6134BIMX/NOPB

LM6134BIMX/NOPB

  • 厂商:

    BURR-BROWN(德州仪器)

  • 封装:

    SOIC14

  • 描述:

    IC OPAMP GP 4 CIRCUIT 14SOIC

  • 数据手册
  • 价格&库存
LM6134BIMX/NOPB 数据手册
Product Folder Sample & Buy Support & Community Tools & Software Technical Documents LM6132, LM6134 SNOS751E – APRIL 2000 – REVISED SEPTEMBER 2014 LM6132/LM6134 Dual and Quad Low Power 10 MHz Rail-to-Rail I/O Operational Amplifiers 1 Features 3 Description • • • • • • • • • • The LM6132/34 provides new levels of speed vs. power performance in applications where low voltage supplies or power limitations previously made compromise necessary. With only 360 μA/amp supply current, the 10 MHz gain-bandwidth of this device supports new portable applications where higher power devices unacceptably drain battery life. 1 (For 5V Supply, Typ Unless Noted) Rail-to-Rail Input CMVR −0.25 V to 5.25 V Rail-to-Rail Output Swing 0.01V to 4.99V High Gain-Bandwidth, 10 MHz at 20 kHz Slew Rate 12 V/μs Low Supply Current 360 μA/Amp Wide Supply Range 2.7 V to over 24 V CMRR 100 dB Gain 100 dB with RL = 10 k PSRR 82 dB 2 Applications • • • • • Battery Operated Instrumentation Instrumentation Amplifiers Portable Scanners Wireless Communications Flat Panel Display Driver The LM6132/34 can be driven by voltages that exceed both power supply rails, thus eliminating concerns over exceeding the common-mode voltage range. The rail-to-rail output swing capability provides the maximum possible dynamic range at the output. This is particularly important when operating on low supply voltages. The LM6132/34 can also drive large capacitive loads without oscillating. Operating on supplies from 2.7 V to over 24 V, the LM6132/34 is excellent for a very wide range of applications, from battery operated systems with large bandwidth requirements to high speed instrumentation. Device Information(1) PART NUMBER PACKAGE BODY SIZE (NOM) LM6132 SOIC (8) 4.90 mm x 3.91 mm LM6132 PDIP (8) 9.81 mm x 6.35 mm LM6134 SOIC (14) 8.65 mm x 3.91 mm LM6134 PDIP (14) 19.177 mm x 6.35 mm (1) For all available packages, see the orderable addendum at the end of the datasheet. Supply Current vs. Supply Voltage Offset Voltage vs. Supply Voltage 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. LM6132, LM6134 SNOS751E – APRIL 2000 – REVISED SEPTEMBER 2014 www.ti.com Table of Contents 1 2 3 4 5 6 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Pin Configuration and Functions ......................... Specifications......................................................... 1 1 1 2 3 4 6.1 6.2 6.3 6.4 6.5 6.6 6.7 6.8 4 4 4 4 4 5 6 6 Absolute Maximum Ratings ...................................... Handling Ratings....................................................... Recommended Operating Conditions (1) ................... Thermal Information, 8-Pin ....................................... Thermal Information, 14-Pin ..................................... 5.0V DC Electrical Characteristics ............................ 5.0V AC Electrical Characteristics ............................ 2.7V DC Electrical Characteristics ............................ 6.9 6.10 6.11 6.12 7 2.7V AC Electrical Characteristics ............................ 24V DC Electrical Characteristics ........................... 24V AC Electrical Characteristics ........................... Typical Performance Characteristics ...................... 6 7 7 8 Application and Implementation ........................ 13 7.1 Application Information............................................ 13 7.2 Enhanced Slew Rate .............................................. 13 7.3 Typical Applications ................................................ 17 8 Device and Documentation Support.................. 18 8.1 8.2 8.3 8.4 9 Related Links .......................................................... Trademarks ............................................................. Electrostatic Discharge Caution .............................. Glossary .................................................................. 18 18 18 18 Mechanical, Packaging, and Orderable Information ........................................................... 18 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision D (February 2013) to Revision E Page • Changed "Junction Temperature Range" to "Operating Temperature Range" and deleted "TJ". .......................................... 4 • Deleted TJ = 25°C for Electrical Characteristics tables. ......................................................................................................... 5 Changes from Revision C (February 2013) to Revision D • 2 Page Changed layout of National Data Sheet to TI format ........................................................................................................... 17 Submit Documentation Feedback Copyright © 2000–2014, Texas Instruments Incorporated Product Folder Links: LM6132 LM6134 LM6132, LM6134 www.ti.com SNOS751E – APRIL 2000 – REVISED SEPTEMBER 2014 5 Pin Configuration and Functions 8-Pin SOIC/PDIP Packages D and P Top View 14-Pin SOIC/PDIP Packages D and NFF Top View Pin Functions PIN LM6132 LM6134 D/P D/NFF0014 A -IN A 2 2 I ChA Inverting Input +IN A 3 3 I ChA Non-inverting Input -IN B 6 6 I ChB Inverting Input +IN B 5 5 I ChB Non-inverting Input -IN C 9 I ChC Inverting Input +IN C 10 I ChC Non-inverting Input -IN D 13 I ChD Inverting Input +IN D 12 I ChD Non-inverting Input NAME I/O DESCRIPTION OUT A 1 1 O ChA Output OUT B 7 7 O ChB Output OUT C 8 O ChC Output OUT D 14 O ChD Output - V 4 11 I Negative Supply V+ 8 4 I Positive Supply Submit Documentation Feedback Copyright © 2000–2014, Texas Instruments Incorporated Product Folder Links: LM6132 LM6134 3 LM6132, LM6134 SNOS751E – APRIL 2000 – REVISED SEPTEMBER 2014 www.ti.com 6 Specifications 6.1 Absolute Maximum Ratings (1) (2) over operating free-air temperature range (unless otherwise noted) MIN MAX UNIT ±15 V (V+)+0.3 − V 35 V Current at Input Pin ±10 mA Current at Output Pin (3) ±25 mA 50 mA Lead Temp. (soldering, 10 sec.) 260 °C Junction Temperature (4) 150 °C Differential Input Voltage Voltage at Input/Output Pin (V )−0.3 Supply Voltage (V+–V−) Current at Power Supply Pin (1) (2) (3) (4) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see the Electrical characteristics. If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and specifications. Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in exceeding the maximum allowed junction temperature of 150°C. The maximum power dissipation is a function of TJ(MAX), RθJA, and TA. The maximum allowable power dissipation at any ambient temperature is PD = (TJ(MAX) − TA)/RθJA. All numbers apply for packages soldered directly into a PC board. 6.2 Handling Ratings Tstg Storage temperature range V(ESD) Electrostatic discharge (1) MIN MAX UNIT −65 +150 °C Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins (1) 2500 V Human Body Model, 1.5 kΩ in series with 100 pF .JEDEC document JEP155 states that 2500-V HBM allows safe manufacturing with a standard ESD control process. 6.3 Recommended Operating Conditions (1) over operating free-air temperature range (unless otherwise noted) MIN Supply Voltage UNIT V +85 °C −40 Operating Temperature Range: LM6132, LM6134 (1) MAX 1.8 ≤ V+ ≤ 24 Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see the Electrical characteristics. 6.4 Thermal Information, 8-Pin THERMAL METRIC (1) RθJA (1) Junction-to-ambient thermal resistance D (SOIC) P (PDIP) 8 PINS 8 PINS 193 115 UNIT °C/W For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953. 6.5 Thermal Information, 14-Pin THERMAL METRIC (1) RθJA (1) 4 Junction-to-ambient thermal resistance D (SOIC) NFF (PDIP) 14 PINS 14 PINS 126 81 UNIT °C/W For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953. Submit Documentation Feedback Copyright © 2000–2014, Texas Instruments Incorporated Product Folder Links: LM6132 LM6134 LM6132, LM6134 www.ti.com SNOS751E – APRIL 2000 – REVISED SEPTEMBER 2014 6.6 5.0V DC Electrical Characteristics Unless otherwise specified, all limits guaranteed for V+ = 5.0V, V− = 0V, VCM = VO = V+/2 and RL > 1 MΩ to V+/2. Boldface limits apply at the temperature extremes PARAMETER VOS Input Offset Voltage TCVOS Input Offset Voltage Average Drift IB Input Bias Current IOS Input Offset Current RIN Input Resistance, CM CMRR Common Mode Rejection Ratio TEST CONDITIONS 0V ≤ VCM ≤ 5V ±2.5V ≤ V ≤ ±12V VCM Input Common-Mode Voltage Range AV Large Signal Voltage Gain RL = 10k VO Output Swing 100k Load 10k Load 5k Load Sourcing Sinking Output Short Circuit Current LM6134 Sourcing Sinking IS (1) (2) Supply Current UNIT 0.25 2 4 6 8 mV max μV/C 110 140 300 180 350 nA max 3.4 30 50 30 50 nA max 100 75 70 75 70 80 60 55 60 55 82 78 75 78 75 dB min −0.25 5.25 0 5.0 0 5.0 V 100 25 8 15 6 V/mV min 4.992 4.98 4.93 4.98 4.93 V min 0.007 0.017 0.019 0.017 0.019 V max 4.952 4.94 4.85 4.94 4.85 V min 0.032 0.07 0.09 0.07 0.09 V max 4.923 4.90 4.85 4.90 4.85 V min 0.051 0.095 0.12 0.095 0.12 V max 4 2 2 2 1 mA min 3.5 1.8 1.8 1.8 1 mA min 3 2 1.6 2 1 mA min 3.5 1.8 1.3 1.8 1 mA min 360 400 450 400 450 μA max + Power Supply Rejection Ratio ISC LM6134BI LM6132BI LIMIT (2) 104 0V ≤ VCM ≤ 4V PSRR Output Short Circuit Current LM6132 LM6134AI LM6132AI LIMIT (2) 5 0V ≤ VCM ≤ 5V ISC TYP (1) Per Amplifier MΩ dB min Typical Values represent the most likely parametric normal. All limits are guaranteed by testing or statistical analysis. Submit Documentation Feedback Copyright © 2000–2014, Texas Instruments Incorporated Product Folder Links: LM6132 LM6134 5 LM6132, LM6134 SNOS751E – APRIL 2000 – REVISED SEPTEMBER 2014 www.ti.com 6.7 5.0V AC Electrical Characteristics Unless otherwise specified, all limits guaranteed for V+ = 5.0V, V− = 0V, VCM = VO = V+/2 and RL > 1 MΩ to V+/2. Boldface limits apply at the temperature extremes PARAMETER TEST CONDITIONS TYP (1) LM6134AI LM6132AI LIMIT (2) LM6134BI LM6132BI LIMIT (2) UNIT 14 8 7 8 7 V/μs min 10 7.4 7 7.4 7 MHz min SR Slew Rate ±4V @ VS = ±6V RS < 1 kΩ GBW Gain-Bandwidth Product f = 20 kHz θm Phase Margin RL = 10k 33 Gm Gain Margin RL = 10k 10 dB en Input Referred Voltage Noise f = 1 kHz 27 nV/√Hz in Input Referred Current Noise f = 1 kHz 0.18 pA/√Hz (1) (2) deg Typical Values represent the most likely parametric normal. All limits are guaranteed by testing or statistical analysis. 6.8 2.7V DC Electrical Characteristics Unless otherwise specified, all limits guaranteed for V+ = 2.7V, V− = 0V, VCM = VO = V+/2 and RL > 1 MΩ to V+/2. Boldface limits apply at the temperature extreme PARAMETER TEST CONDITIONS TYP (1) LM6134AI LM6132AI LIMIT (2) LM6134BI LM6132BI LIMIT (2) UNIT 0.12 2 8 6 12 mV max VOS Input Offset Voltage IB Input Bias Current IOS Input Offset Current RIN Input Resistance CMRR Common Mode Rejection Ratio 0V ≤ VCM ≤ 2.7V PSRR Power Supply Rejection Ratio ±1.35V ≤ V+ ≤ ±12V 80 VCM Input Common-Mode Voltage Range AV Large Signal Voltage Gain RL = 10k VO Output Swing RL = 100k IS (1) (2) Supply Current 0V ≤ VCM ≤ 2.7V Per Amplifier 90 nA 2.8 nA 134 MΩ 82 dB dB 2.7 0 2.7 0 0.03 0.08 0.112 0.08 0.112 V max 2.66 2.65 2.25 2.65 2.25 V min 100 V V/mV μA 330 Typical Values represent the most likely parametric normal. All limits are guaranteed by testing or statistical analysis. 6.9 2.7V AC Electrical Characteristics Unless otherwise specified, all limits guaranteed for V+ = 2.7V, V− = 0V, VCM = VO = V+/2 and RL > 1 MΩ to V+/2. PARAMETER TEST CONDITIONS TYP (1) LM6134AI LM6132AI LIMIT (2) GBW Gain-Bandwidth Product RL = 10k, f = 20 kHz θm Phase Margin RL = 10k Gm Gain Margin (1) (2) 6 LM6134BI LM6132BI LIMIT UNIT (2) 7 MHz 23 deg 12 dB Typical Values represent the most likely parametric normal. All limits are guaranteed by testing or statistical analysis. Submit Documentation Feedback Copyright © 2000–2014, Texas Instruments Incorporated Product Folder Links: LM6132 LM6134 LM6132, LM6134 www.ti.com SNOS751E – APRIL 2000 – REVISED SEPTEMBER 2014 6.10 24V DC Electrical Characteristics Unless otherwise specified, all limits guaranteed for V+ = 24V, V− = 0V, VCM = VO = V+/2 and RL > 1 MΩ to V+/2. Boldface limits apply at the temperature extreme PARAMETER TEST CONDITIONS TYP (1) LM6134AI LM6132AI LIMIT (2) LM6134BI LM6132BI LIMIT (2) UNIT 1.7 3 5 7 9 mV max VOS Input Offset Voltage IB Input Bias Current IOS Input Offset Current 4.8 nA RIN Input Resistance 210 MΩ CMRR Common Mode Rejection Ratio 80 dB 0V ≤ VCM ≤ 24V 0V ≤ VCM ≤ 24V + 2.7V ≤ V ≤ 24V PSRR Power Supply Rejection Ratio VCM Input Common-Mode Voltage Range AV Large Signal Voltage Gain RL = 10k VO Output Swing RL = 10k IS (1) (2) Supply Current 125 nA 82 −0.25 24.25 dB 0 24 0 24 102 Per Amplifier V min V max V/mV 0.075 23.86 0.15 23.8 0.15 23.8 390 450 490 450 490 V max V min μA max Typical Values represent the most likely parametric normal. All limits are guaranteed by testing or statistical analysis. 6.11 24V AC Electrical Characteristics Unless otherwise specified, all limits guaranteed for V+ = 24V, V− = 0V, VCM = VO = V+/2 and RL > 1 MΩ to V+/2. PARAMETER TEST CONDITIONS LM6134AI LM6132AI LIMIT (2) TYP (1) LM6134BI LM6132BI LIMIT (2) UNIT GBW Gain-Bandwidth Product RL = 10k, f = 20 kHz 11 MHz θm Phase Margin RL = 10k 23 deg Gm Gain Margin RL = 10k 12 dB THD + N Total Harmonic Distortion and Noise AV = +1, VO = 20VP-P f = 10 kHz (1) (2) 0.0015% Typical Values represent the most likely parametric normal. All limits are guaranteed by testing or statistical analysis. Submit Documentation Feedback Copyright © 2000–2014, Texas Instruments Incorporated Product Folder Links: LM6132 LM6134 7 LM6132, LM6134 SNOS751E – APRIL 2000 – REVISED SEPTEMBER 2014 www.ti.com 6.12 Typical Performance Characteristics TA = 25°C, RL = 10 kΩ unless otherwise specified 8 Figure 1. Supply Current vs. Supply Voltage Figure 2. Offset Voltage vs. Supply Voltage Figure 3. dVOS vs. VCM Figure 4. dVOS vs. VCM Figure 5. dVOS vs. VCM Figure 6. IBIAS vs. VCM Submit Documentation Feedback Copyright © 2000–2014, Texas Instruments Incorporated Product Folder Links: LM6132 LM6134 LM6132, LM6134 www.ti.com SNOS751E – APRIL 2000 – REVISED SEPTEMBER 2014 Typical Performance Characteristics (continued) TA = 25°C, RL = 10 kΩ unless otherwise specified Figure 7. IBIAS vs. VCM Figure 8. IBIAS vs. VCM Figure 9. Input Bias Current vs. Supply Voltage Figure 10. Negative PSRR vs. Frequency Figure 11. Positive PSSR vs. Frequency Figure 12. dVOS vs. Output Voltage Submit Documentation Feedback Copyright © 2000–2014, Texas Instruments Incorporated Product Folder Links: LM6132 LM6134 9 LM6132, LM6134 SNOS751E – APRIL 2000 – REVISED SEPTEMBER 2014 www.ti.com Typical Performance Characteristics (continued) TA = 25°C, RL = 10 kΩ unless otherwise specified 10 Figure 13. dVOS vs. Output Voltage Figure 14. dVOS vs. Output Voltage Figure 15. CMRR vs. Frequency Figure 16. Output Voltage vs. Sinking Current Figure 17. Output Voltage vs. Sinking Current Figure 18. Output Voltage vs. Sinking Current Submit Documentation Feedback Copyright © 2000–2014, Texas Instruments Incorporated Product Folder Links: LM6132 LM6134 LM6132, LM6134 www.ti.com SNOS751E – APRIL 2000 – REVISED SEPTEMBER 2014 Typical Performance Characteristics (continued) TA = 25°C, RL = 10 kΩ unless otherwise specified Figure 19. Output Voltage vs. Sourcing Current Figure 20. Output Voltage vs. Sourcing Current Figure 21. Output Voltage vs. Sourcing Current Figure 22. Noise Voltage vs. Frequency Figure 23. Noise Current vs. Frequency Figure 24. NF vs. Source Resistance Submit Documentation Feedback Copyright © 2000–2014, Texas Instruments Incorporated Product Folder Links: LM6132 LM6134 11 LM6132, LM6134 SNOS751E – APRIL 2000 – REVISED SEPTEMBER 2014 www.ti.com Typical Performance Characteristics (continued) TA = 25°C, RL = 10 kΩ unless otherwise specified 12 Figure 25. Gain and Phase vs. Frequency Figure 26. Gain and Phase vs. Frequency Figure 27. Gain and Phase vs. Frequency Figure 28. GBW vs. Supply Voltage at 20 kHz Submit Documentation Feedback Copyright © 2000–2014, Texas Instruments Incorporated Product Folder Links: LM6132 LM6134 LM6132, LM6134 www.ti.com SNOS751E – APRIL 2000 – REVISED SEPTEMBER 2014 7 Application and Implementation 7.1 Application Information The LM6132 brings a new level of ease of use to op amp system design. Greater than rail-to-rail input voltage eliminates concern over exceeding the common-mode voltage range. Rail-to-rail output swing provides the maximum possible dynamic range at the output. This is particularly important when operating on low supply voltages. The high gain-bandwidth with low supply current opens new battery powered applications, where high power consumption previously reduced battery life to unacceptable levels. To take advantage of these features, some ideas should be kept in mind, which are outlined in subsequent sections. 7.2 Enhanced Slew Rate Unlike most bipolar op amps, the unique phase reversal prevention/speed-up circuit in the input stage eliminates phase reversal and allows the slew rate to be a function of the input signal amplitude. Figure 30 shows how excess input signal is routed around the input collector-base junctions directly to the current mirrors. The LM6132/34 input stage converts the input voltage change to a current change. This current change drives the current mirrors through the collectors of Q1–Q2, Q3–Q4 when the input levels are normal. If the input signal exceeds the slew rate of the input stage and the differential input voltage rises above a diode drop, the excess signal bypasses the normal input transistors, (Q1–Q4), and is routed in correct phase through the two additional transistors, (Q5, Q6), directly into the current mirrors. The rerouting of excess signal allows the slew-rate to increase by a factor of 10 to 1 or more. (See Figure 29). As the overdrive increases, the op amp reacts better than a conventional op amp. Large fast pulses will raise the slew rate to around 25V to 30 V/μs. Figure 29. Slew Rate vs. Differential VIN VS = ±12V This effect is most noticeable at higher supply voltages and lower gains where incoming signals are likely to be large. This speed-up action adds stability to the system when driving large capacitive loads. Submit Documentation Feedback Copyright © 2000–2014, Texas Instruments Incorporated Product Folder Links: LM6132 LM6134 13 LM6132, LM6134 SNOS751E – APRIL 2000 – REVISED SEPTEMBER 2014 www.ti.com Enhanced Slew Rate (continued) 7.2.1 Driving Capacitive Loads Capacitive loads decrease the phase margin of all op amps. This is caused by the output resistance of the amplifier and the load capacitance forming an R-C phase lag network. This can lead to overshoot, ringing and oscillation. Slew rate limiting can also cause additional lag. Most op amps with a fixed maximum slew-rate will lag further and further behind when driving capacitive loads even though the differential input voltage raises. With the LM6132, the lag causes the slew rate to raise. The increased slew-rate keeps the output following the input much better. This effectively reduces phase lag. After the output has caught up with the input, the differential input voltage drops down and the amplifier settles rapidly. Figure 30. Internal Block Diagram 14 Submit Documentation Feedback Copyright © 2000–2014, Texas Instruments Incorporated Product Folder Links: LM6132 LM6134 LM6132, LM6134 www.ti.com SNOS751E – APRIL 2000 – REVISED SEPTEMBER 2014 Enhanced Slew Rate (continued) These features allow the LM6132 to drive capacitive loads as large as 500 pF at unity gain and not oscillate. The scope photos (Figure 31 and Figure 32) show the LM6132 driving a 500 pF load. In Figure 31 , the lower trace is with no capacitive load and the upper trace is with a 500 pF load. Here we are operating on ±12V supplies with a 20 VPP pulse. Excellent response is obtained with a Cf of 39 pF. In Figure 32, the supplies have been reduced to ±2.5V, the pulse is 4 VPP and CF is 39 pF. The best value for the compensation capacitor should be established after the board layout is finished because the value is dependent on board stray capacity, the value of the feedback resistor, the closed loop gain and, to some extent, the supply voltage. Another effect that is common to all op amps is the phase shift caused by the feedback resistor and the input capacitance. This phase shift also reduces phase margin. This effect is taken care of at the same time as the effect of the capacitive load when the capacitor is placed across the feedback resistor. The circuit shown in Figure 33 was used for Figure 31 and Figure 32. Figure 31. Twenty-Volt Step Response: with Cap Load (Top Trace) without Cap Load (Bottom Trace) Figure 32. Four-Volt Step Response: with Cap Load (Top Trace) without Cap Load (Bottom Trace) Submit Documentation Feedback Copyright © 2000–2014, Texas Instruments Incorporated Product Folder Links: LM6132 LM6134 15 LM6132, LM6134 SNOS751E – APRIL 2000 – REVISED SEPTEMBER 2014 www.ti.com Enhanced Slew Rate (continued) Figure 33. Cap Load Test Circuit Figure 34 shows a method for compensating for load capacitance (CO) effects by adding both an isolation resistor RO at the output and a feedback capacitor CFdirectly between the output and the inverting input pin. Feedback capacitor CF compensates for the pole introduced by RO and CO, minimizing ringing in the output waveform while the feedback resistor RF compensates for dc inaccuracies introduced by RO. Depending on the size of the load capacitance, the value of ROis typically chosen to be between 100 Ω to 1 kΩ. Figure 34. Capacitive Loading Compensation Technique 16 Submit Documentation Feedback Copyright © 2000–2014, Texas Instruments Incorporated Product Folder Links: LM6132 LM6134 LM6132, LM6134 www.ti.com SNOS751E – APRIL 2000 – REVISED SEPTEMBER 2014 7.3 Typical Applications 7.3.1 Three Op Amp Instrumentation Amp with Rail-to-Rail Input and Output Using the LM6134, a 3 op amp instrumentation amplifier with rail-to-rail inputs and rail to rail output can be made. These features make these instrumentation amplifiers ideal for single supply systems. Some manufacturers use a precision voltage divider array of 5 resistors to divide the common-mode voltage to get an input range of rail-to-rail or greater. The problem with this method is that it also divides the signal, so to even get unity gain, the amplifier must be run at high closed loop gains. This raises the noise and drift by the internal gain factor and lowers the input impedance. Any mismatch in these precision resistors reduces the CMR as well. Using the LM6134, all of these problems are eliminated. In this example, amplifiers A and B act as buffers to the differential stage (Figure 35). These buffers assure that the input impedance is over 100 MΩ and they eliminate the requirement for precision matched resistors in the input stage. They also assure that the difference amp is driven from a voltage source. This is necessary to maintain the CMR set by the matching of R1–R2 with R3–R4. Figure 35. Instrumentation Amplifier 7.3.2 Flat Panel Display Buffering Three features of the LM6132/34 make it a superb choice for TFT LCD applications. First, its low current draw (360 μA per amplifier at 5 V) makes it an ideal choice for battery powered applications such as in laptop computers. Second, since the device operates down to 2.7 V, it is a natural choice for next generation 3V TFT panels. Last, but not least, the large capacitive drive capability of the LM6132 comes in very handy in driving highly capacitive loads that are characteristic of LCD display drivers. The large capacitive drive capability of the LM6132/34 allows it to be used as buffers for the gamma correction reference voltage inputs of resistor-DAC type column (Source) drivers in TFT LCD panels. This amplifier is also useful for buffering only the center reference voltage input of Capacitor-DAC type column (Source) drivers such as the LMC750X series. Since for VGA and SVGA displays, the buffered voltages must settle within approximately 4 μs, the well known technique of using a small isolation resistor in series with the amplifier's output very effectively dampens the ringing at the output. With its wide supply voltage range of 2.7 V to 24 V, the LM6132/34 can be used for a diverse range of applications. The system designer is thus able to choose a single device type that serves many sub-circuits in the system, eliminating the need to specify multiple devices in the bill of materials. Along with its sister parts, the LM6142 and LM6152 that have the same wide supply voltage capability, choice of the LM6132 in a design eliminates the need to search for multiple sources for new designs. Submit Documentation Feedback Copyright © 2000–2014, Texas Instruments Incorporated Product Folder Links: LM6132 LM6134 17 LM6132, LM6134 SNOS751E – APRIL 2000 – REVISED SEPTEMBER 2014 www.ti.com 8 Device and Documentation Support 8.1 Related Links The table below lists quick access links. Categories include technical documents, support and community resources, tools and software, and quick access to sample or buy. Table 1. Related Links PARTS PRODUCT FOLDER SAMPLE & BUY TECHNICAL DOCUMENTS TOOLS & SOFTWARE SUPPORT & COMMUNITY LM6132 Click here Click here Click here Click here Click here LM6134 Click here Click here Click here Click here Click here 8.2 Trademarks All trademarks are the property of their respective owners. 8.3 Electrostatic Discharge Caution These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 8.4 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. 9 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. 18 Submit Documentation Feedback Copyright © 2000–2014, Texas Instruments Incorporated Product Folder Links: LM6132 LM6134 PACKAGE OPTION ADDENDUM www.ti.com 11-Nov-2022 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) Samples (4/5) (6) LM6132AIM NRND SOIC D 8 95 Non-RoHS & Green Call TI Level-1-235C-UNLIM -40 to 85 LM61 32AIM LM6132AIM/NOPB ACTIVE SOIC D 8 95 RoHS & Green SN Level-1-260C-UNLIM -40 to 85 LM61 32AIM LM6132AIMX NRND SOIC D 8 2500 Non-RoHS & Green Call TI Level-1-235C-UNLIM -40 to 85 LM61 32AIM LM6132AIMX/NOPB ACTIVE SOIC D 8 2500 RoHS & Green SN Level-1-260C-UNLIM -40 to 85 LM61 32AIM LM6132BIM NRND SOIC D 8 95 Non-RoHS & Green Call TI Level-1-235C-UNLIM -40 to 85 LM61 32BIM LM6132BIM/NOPB ACTIVE SOIC D 8 95 RoHS & Green SN Level-1-260C-UNLIM -40 to 85 LM61 32BIM LM6132BIMX NRND SOIC D 8 2500 Non-RoHS & Green Call TI Level-1-235C-UNLIM -40 to 85 LM61 32BIM LM6132BIMX/NOPB ACTIVE SOIC D 8 2500 RoHS & Green SN Level-1-260C-UNLIM -40 to 85 LM61 32BIM Samples LM6132BIN/NOPB ACTIVE PDIP P 8 40 RoHS & Green NIPDAU Level-1-NA-UNLIM -40 to 85 LM6132 BIN Samples LM6134AIM NRND SOIC D 14 55 Non-RoHS & Green Call TI Level-1-235C-UNLIM -40 to 85 LM6134AIM LM6134AIM/NOPB ACTIVE SOIC D 14 55 RoHS & Green SN Level-1-260C-UNLIM -40 to 85 LM6134AIM Samples LM6134AIMX/NOPB ACTIVE SOIC D 14 2500 RoHS & Green SN Level-1-260C-UNLIM -40 to 85 LM6134AIM Samples LM6134BIM NRND SOIC D 14 55 Non-RoHS & Green Call TI Level-1-235C-UNLIM -40 to 85 LM6134BIM LM6134BIM/NOPB ACTIVE SOIC D 14 55 RoHS & Green SN Level-1-260C-UNLIM -40 to 85 LM6134BIM Samples LM6134BIMX/NOPB ACTIVE SOIC D 14 2500 RoHS & Green SN Level-1-260C-UNLIM -40 to 85 LM6134BIM Samples LM6134BIN/NOPB ACTIVE PDIP N 14 25 RoHS & Green NIPDAU Level-1-NA-UNLIM -40 to 85 LM6134BIN Samples (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. Addendum-Page 1 Samples Samples Samples PACKAGE OPTION ADDENDUM www.ti.com 11-Nov-2022 NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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