LM66100QDCKRQ1

LM66100-Q1 SLVSGD6A – NOVEMBER 2021 – REVISED MARCH 2022 LM66100-Q1 5.5-V, 1.5-A 79-mΩ, Automotive, Low IQ Ideal Diode with Input Polarity Protection 1 Features 3 Description • The LM66100-Q1 is a Single-Input, Single-Output (SISO) integrated ideal diode that is well suited for a variety of applications. The device contains a Pchannel MOSFET that can operate over an input voltage range of 1.5 V to 5.5 V and can support a maximum continuous current of 1.5 A. • • • • • • • AEC-Q100 qualified for automotive applications: – Device temperature grade 1: –40°C to 125°C ambient operating temperature range Wide operating voltage range: 1.5 V–5.5 V Reverse voltage standoff on VIN: –6-V absolute maximum Maximum continuous current (IMAX): 1.5 A On-Resistance (RON): – 5-V VIN = 79 mΩ (typical) – 3.6-V VIN = 91 mΩ (typical) – 1.8-V VIN = 141 mΩ (typical) Comparator chip enable (CE) Channel status indication (ST) Low current consumption: – 3.6-V VIN shutdown current (ISD,VIN): 120 nA (typical) – 3.6-V VIN quiescent current (IQ, VIN): 150 nA (typical) 2 Applications • • • • Infotainment and cluster head unit Automotive cluster display ADAS surround view system ECU Body control module and gateway The chip enable works by comparing the CE pin voltage to the input voltage. When the CE pin voltage is higher than VIN, the device disables and the MOSFET is off. When the CE pin voltage is lower, the MOSFET is on. The LM66100-Q1 also comes with reverse polarity protection (RPP) that can protect the device from a miswired input, such as a reversed battery. Two LM66100-Q1 devices can be used in an ORing configuration similar to a dual diode ORing implementation. In this configuration, the devices pass the highest input voltage to the output while blocking reverse current flow into the input supplies. These devices can compare input and output voltages to make sure that reverse current is blocked through an internal voltage comparator. The LM66100-Q1 is available in a standard SC-70 package characterized for operation over a junction temperature range of –40°C to 150°C. (1) Device Information PART NUMBER LM66100-Q1 (1) PACKAGE SC-70 (6) BODY SIZE (NOM) 2.1 mm × 2.0 mm For all available packages, see the orderable addendum at the end of the data sheet. Typical Application An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. LM66100-Q1 www.ti.com SLVSGD6A – NOVEMBER 2021 – REVISED MARCH 2022 Table of Contents 1 Features............................................................................1 2 Applications..................................................................... 1 3 Description.......................................................................1 4 Revision History.............................................................. 2 5 Pin Configuration and Functions...................................3 6 Specifications.................................................................. 4 6.1 Absolute Maximum Ratings........................................ 4 6.2 ESD Ratings............................................................... 4 6.3 Recommended Operating Conditions.........................4 6.4 Thermal Information....................................................4 6.5 Electrical Characteristics.............................................5 6.6 Switching Characteristics............................................6 6.7 Typical Characteristics................................................ 7 7 Parameter Measurement Information............................ 9 8 Detailed Description......................................................10 8.1 Overview................................................................... 10 8.2 Functional Block Diagram......................................... 10 8.3 Feature Description...................................................11 8.4 Device Functional Modes..........................................12 9 Application and Implementation.................................. 12 9.1 Application Information............................................. 12 9.2 Typical Applications.................................................. 12 10 Power Supply Recommendations..............................15 11 Layout........................................................................... 16 11.1 Layout Guidelines................................................... 16 11.2 Layout Example...................................................... 16 12 Device and Documentation Support..........................17 12.1 Receiving Notification of Documentation Updates..17 12.2 Support Resources................................................. 17 12.3 Trademarks............................................................. 17 12.4 Electrostatic Discharge Caution..............................17 12.5 Glossary..................................................................17 13 Mechanical, Packaging, and Orderable Information.................................................................... 17 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision * (November 2021) to Revision A (March 2022) Page • Changed data sheet status from "Advance Information" to "Production Data"...................................................1 2 Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: LM66100-Q1 LM66100-Q1 www.ti.com SLVSGD6A – NOVEMBER 2021 – REVISED MARCH 2022 5 Pin Configuration and Functions Figure 5-1. DCK Package 6-Pin SC-70 Top View Table 5-1. Pin Functions PIN NO. NAME I/O DESCRIPTION 1 VIN I 2 GND — Device input 3 CE I 4 N/C — Not internally connected, can be tied to GND or left floating. 5 ST O Active-low open-drain output, pulled low when the chip is disabled. Hi-Z when the chip is enabled. Connect to GND if not required. 6 VOUT O Device output Device ground Active-low chip enable. Can be connected to VOUT for reverse current protection. Do not leave floating. Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: LM66100-Q1 3 LM66100-Q1 www.ti.com SLVSGD6A – NOVEMBER 2021 – REVISED MARCH 2022 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN MAX UNIT VIN Maximum Input Voltage Range –6 6 V VOUT Maximum Output Voltage Range –0.3 6 V VCE Maximum CE Pin Voltage –0.3 6 V VST Maximum ST Pin Voltage –0.3 6 V ISW, MAX Maximum Continuous Switch Current 1.5 A ISW, PLS Maximum Pulsed Switch Current (≤120 ms, 2% Duty Cycle) 2.5 A ID, PLS Maximum Pulsed Body Diode Current (≤0.1 ms, 0.2% Duty Cycle) ICE Maximum CE Pin Current IST Maximum ST Pin Current TJ Junction temperature –40 150 °C TSTG Storage temperature –65 150 °C TLEAD Maximum Lead Temperature (10 s soldering time) 300 °C (1) 2.5 A –1 mA –1 mA Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions. If used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime. 6.2 ESD Ratings VALUE V(ESD) (1) Electrostatic discharge Human body model (HBM), per AEC Q100002(1) HBM ESD classification level 2 ±2000 Charged device model (CDM), per AEC Q100011 CDM ESD classification level C4A ±500 UNIT V AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification. 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN VIN Input Voltage Range VOUT VCE VST TYP MAX UNIT 1.5 5.5 V Output Voltage Range 1 5.5 V CE Pin Voltage Range 0 5.5 V ST Pin Voltage Range 0 5.5 V 6.4 Thermal Information LM66100 THERMAL METRIC(1) DCK (SC-70) UNIT 6 PINS 4 RθJA Junction-to-ambient thermal resistance 192 °C/W RθJC(top) Junction-to-case (top) thermal resistance 124 °C/W RθJB Junction-to-board thermal resistance 52 °C/W ΨJT Junction-to-top characterization parameter 34 °C/W Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: LM66100-Q1 LM66100-Q1 www.ti.com SLVSGD6A – NOVEMBER 2021 – REVISED MARCH 2022 LM66100 THERMAL METRIC(1) DCK (SC-70) UNIT 6 PINS ΨJB (1) Junction-to-board characterization parameter 52 °C/W For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. 6.5 Electrical Characteristics Typical values are at 25°C with an input voltage of 3.6V. Maximum and minimum values are across the entire operating voltage range, from 1.5V to 5.5V. (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNI T 0.12 0.3 µA 0.3 µA 0.3 µA 0.3 µA 0.5 µA 2.7 µA Input Supply (VIN) VIN Shutdown Current VOUT = VIN VCE > VIN + 80 mV IOUT = 0 A (VOUT = open) 25°C ISD,VIN VIN Quiescent Current VOUT = VIN VCE < VIN – 250 mV IOUT = 0 A (VOUT = open) 25°C IQ,VIN –40°C to 125°C 0.15 –40°C to 125°C 25°C VOUT – VIN ≤ 5.5 V VCE > VIN + 80 mV 0.2 –40°C to 85°C –40°C to 125°C IOUT, OFF OUT to IN Leakage Current (Current out of VIN) 8 µA VOUT – VIN ≤ 4.5 V VCE > VIN + 80 mV –40°C to 85°C 1.7 µA –40°C to 125°C 5.1 µA VOUT – VIN ≤ 1.0 V VCE > VIN + 80 mV –40°C to 85°C 0.7 µA –40°C to 125°C 2.1 µA ON-Resistance (RON) 25°C RON ON-State Resistance IOUT = –200 mA VIN = 5 V 79 –40°C to 85°C 110 mΩ –40°C to 125°C 120 25°C RON ON-State Resistance IOUT = –200 mA VIN = 3.6 V 91 140 25°C ON-State Resistance IOUT = –200 mA VIN = 1.8 V 110 125 mΩ –40°C to 85°C –40°C to 125°C RON 95 141 180 –40°C to 85°C 210 mΩ –40°C to 125°C 230 Comparator Chip Enable (CE) VON Turn ON Threshold VCE – VIN –40°C to 125°C –250 –150 –80 mV VOFF Turn OFF Threshold VCE – VIN –40°C to 125°C 0 35 ICE CE Pin Leakage Current VCE < VIN – 250 mV –40°C to 125°C 0 160 300 nA ICE CE Pin Leakage Current VCE > VIN + 80 mV –40°C to 125°C 0 400 610 nA 0.5 1 A 0.5 1.1 V 80 mV Reverse Current Blocking (RCB) and Body Diode Characteristics IRCB VFWD Reverse Activation Current VCE = VOUT –40°C to 125°C Body Diode Forward Voltage IOUT = 10 mA VCE > VIN + 80 mV –40°C to 125°C 0.1 Status Indication (ST) VOL, ST Output Low Voltage IST = 1 mA –40°C to 125°C tST Status Delay Time VCE transitions from low to high –40°C to 125°C 0.1 1 Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: LM66100-Q1 V µs 5 LM66100-Q1 www.ti.com SLVSGD6A – NOVEMBER 2021 – REVISED MARCH 2022 6.5 Electrical Characteristics (continued) Typical values are at 25°C with an input voltage of 3.6V. Maximum and minimum values are across the entire operating voltage range, from 1.5V to 5.5V. (unless otherwise noted) PARAMETER IST ST Pin Leakage Current TEST CONDITIONS VCE < VIN – 250 mV –40°C to 125°C MIN TYP MAX UNI T –20 nA 20 6.6 Switching Characteristics Unless otherwise noted, the typical characteristics in the following table applies over the entire recommended operating voltage at an ambient temperature of 25°C and a load of CL = 100 nF and RL = 1 kΩ PARAMETER tON tOFF tFALL 6 Turn ON Time Turn OFF Time Output Fall Time TEST CONDITIONS MIN TYP MAX UNIT VIN = 1.8 V 90 µs VIN = 3.6 V 40 µs VIN = 5 V 27 µs VIN = 1.8 V 2 µs VIN = 3.6 V 2 µs VIN = 5 V 2 µs VIN = 1.8 V 20 µs VIN = 3.6 V 10 µs VIN = 5 V 7.5 µs Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: LM66100-Q1 LM66100-Q1 www.ti.com SLVSGD6A – NOVEMBER 2021 – REVISED MARCH 2022 6.7 Typical Characteristics 240 200 180 160 140 120 100 160 140 120 100 80 60 80 40 60 1.5 20 1.5 2 2.5 3 3.5 4 Input Voltage (V) 4.5 5 5.5 2 3 3.5 4 Input Voltage (V) 4.5 5 5.5 D002 VCE < VIN Figure 6-1. Shutdown Current vs Input Voltage Figure 6-2. Quiescent Current vs Input Voltage 1200 180 VOUT - VIN = 1V VOUT - VIN = 4.5V VOUT - VIN = 5.5V 160 On-Resistance (m:) 1000 800 600 400 120 100 80 -20 0 20 40 60 Temperature (qC) 80 100 60 -40 120 -20 0 D003 VCE > VIN VCE < VIN Figure 6-3. Reverse Leakage Current vs Junction Temperature 20 40 60 Temperature (qC) 80 100 120 D004 IOUT = 200 mA Figure 6-4. On-Resistance vs Junction Temperature -50 65 -40qC 25qC 85qC 105qC -40qC 25qC 85qC 105qC 60 Turn OFF Threshold (V) -75 -100 -125 -150 -175 -200 1.5 VIN = 1.8V VIN = 3.6V VIN = 5V 140 200 0 -40 Turn ON Threshold (V) 2.5 D001 VCE > VIN VOUT to VIN Leakage Current (nA) -40qC 25qC 85qC 105qC 180 Quiescent Current (nA) Shutdown Current (nA) 220 200 -40qC 25qC 85qC 105qC 55 50 45 40 35 30 2 2.5 3 3.5 4 Input Voltage (V) 4.5 5 5.5 25 1.5 D007 Figure 6-5. Turn ON Threshold vs Input Voltage 2 2.5 3 3.5 4 Input Voltage (V) 4.5 5 5.5 D008 Figure 6-6. Turn OFF Threshold vs Input Voltage Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: LM66100-Q1 7 LM66100-Q1 www.ti.com SLVSGD6A – NOVEMBER 2021 – REVISED MARCH 2022 0.6 120 0.5 100 Turn ON Time (Ps) Forward Voltage (V) 6.7 Typical Characteristics (continued) 0.4 0.3 0.2 -40qC 25qC 85qC 105qC 0.1 0 1.5 2 2.5 VCE > VIN 3 3.5 4 Input Voltage (V) 4.5 5 VIN = 1.8V VIN = 3.6V VIN = 5V 80 60 40 20 0 -40 5.5 -20 0 D005 IOUT = 10 mA CL = 100 nF Figure 6-7. Body Diode Forward Voltage vs Input Voltage 20 40 60 80 Junction Temperature (qC) 120 D009 RL = 1 kΩ Figure 6-8. Turn ON Time vs Junction Temperature 22 10 VIN = 1.8V VIN = 3.6V VIN = 5V 20 8 18 Fall Time (Ps) Turn OFF Time (Ps) 100 6 4 16 14 12 10 2 8 0 -40 4 -40 6 -20 0 20 40 60 80 Junction Temperature (qC) CL = 100nF RL = 1 kΩ 100 120 VIN = 1.8 V to 5 V Figure 6-9. Turn OFF Time vs Junction Temperature 8 -20 0 D010 CL = 100 nF 20 40 60 80 Junction Temperature (qC) 100 120 D011 RL = 1 kΩ Figure 6-10. Fall Time vs Junction Temperature Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: LM66100-Q1 LM66100-Q1 www.ti.com SLVSGD6A – NOVEMBER 2021 – REVISED MARCH 2022 7 Parameter Measurement Information Figure 7-1. Timing Diagram Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: LM66100-Q1 9 LM66100-Q1 www.ti.com SLVSGD6A – NOVEMBER 2021 – REVISED MARCH 2022 8 Detailed Description 8.1 Overview The LM66100-Q1 is a Single-Input, Single-Output (SISO) integrated ideal diode that contains a P-channel MOSFET to minimize the voltage drop from input to output. The LM66100-Q1 can operate over an input voltage range of 1.5 V to 5.5 V and support a maximum continuous current of 1.5 A. The chip enable works by comparing the CE pin voltage to the input voltage. When the CE pin voltage is higher than VIN by 80 mV, the device is disabled and the MOSFET is off. When the CE pin voltage is lower than VIN by 250 mV, the MOSFET is on. The LM66100-Q1 also comes with reverse polarity protection (RPP) that protects against events where the VIN and GND terminals are swapped. 8.2 Functional Block Diagram 10 Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: LM66100-Q1 LM66100-Q1 www.ti.com SLVSGD6A – NOVEMBER 2021 – REVISED MARCH 2022 8.3 Feature Description 8.3.1 Reverse Polarity Protection (RPP) In the event a negative input voltage is applied, the ideal diode stays off and prevent current flow to protect the system load. For a stand-alone, always on application, CE can be tied to GND so it does not go negative with respect to GND. See Figure 8-1. Figure 8-1. RPP Protection Circuit 8.3.2 Always-ON Reverse Current Blocking (RCB) By connecting the CE pin to VOUT, this allows the comparator to detect reverse current flow through the switch. If the output is forced above the selected input by VOFF, the channel switches off to stop the reverse current IRCB within tOFF. Once the output falls below VIN by VON, the device turns back on. Figure 8-2. RCB Circuit Figure 8-3. RCB Waveforms Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: LM66100-Q1 11 LM66100-Q1 www.ti.com SLVSGD6A – NOVEMBER 2021 – REVISED MARCH 2022 8.4 Device Functional Modes Table 8-1 summarizes the Device Functional Modes: Table 8-1. Device Functional Modes State IN-to-OUT Power Dissipation ST State OFF Diode IOUT × VFWD L ON 2 Switch IOUT × RON H 9 Application and Implementation Note Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes, as well as validating and testing their design implementation to confirm system functionality. 9.1 Application Information The LM66100-Q1 Ideal Diode can be used in a variety of stand-alone and multi-channel applications. 9.2 Typical Applications 9.2.1 Dual Ideal Diode ORing Two LM66100-Q1 Ideal Diodes can be used together for ORing between two power supplies. Figure 9-1. Dual Ideal Diode ORing 9.2.1.1 Design Requirements Design a circuit that allows the highest input voltage to power a downstream system while providing reverse current protection. 9.2.1.2 Detailed Design Procedure This circuit ties the CE of each device to the opposite power source. In this configuration, the highest supply is always selected using a make-before-break logic. This selection prevents any reverse current flow between the supplies and avoids the need of a dedicated reverse current blocking comparator. For ORing applications that need RPP, TI recommends to use a series resistor (RCE) to limit the current into the CE pin during a negative voltage event. 12 Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: LM66100-Q1 LM66100-Q1 www.ti.com SLVSGD6A – NOVEMBER 2021 – REVISED MARCH 2022 9.2.1.3 Application Curves The below scope shot shows the output voltage (VOUT) being initially powered by VIN1. When VIN2 is applied, it powers VOUT because it is a higher voltage. When VIN2 is removed, VOUT is once again powered by VIN1. Figure 9-2. Dual Ideal Diode ORing Behavior 9.2.2 Dual Ideal Diode ORing for Continuous Output Power Figure 9-3. Dual Ideal Diode ORing for Continuous Output Power 9.2.2.1 Design Requirements The shortcoming of the previous implementation happens when both input voltages are the same for a long period of time. Then, both devices completely turn off, powering down the output load. To avoid this case, use the status output from the priority supply and a pullup resistor, causing both devices to switchover at the same time. For ORing applications that need RPP, TI recommends to use a series resistor (RCE) to limit the current into the CE pin during a negative voltage event. Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: LM66100-Q1 13 LM66100-Q1 www.ti.com SLVSGD6A – NOVEMBER 2021 – REVISED MARCH 2022 9.2.2.2 Application Curves The figures below show the switchover performance between VIN1 and VIN2. Figure 9-4. Switchover From VIN1 (5 V) to VIN2 (3.3 Figure 9-5. Switchover From VIN2 (3.3 V) to VIN1 (5 V) V) 9.2.3 ORing with Discrete MOSFET Figure 9-6. ORing with a Discrete MOSFET 9.2.3.1 Design Requirements Similar to the Dual Ideal Diode circuit, the Status Output can also be used to control a discrete P-Channel MOSFET. This action can be useful in applications that want to minimize the leakage current on the secondary supply, such as battery backup systems. This configuration can also be used on systems that require a lower RON on the secondary rail, useful for higher current applications. When the Ideal Diode path is enabled, the status is Hi-Z and pulls up the gate of the external PFET to keep it off. When the main supply (VIN1) drops such that backup supply (VIN2) is higher than VIN1, the ideal diode is disabled and pulls the ST pin and the PFET gate low to turn on the discrete MOSFET path. 14 Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: LM66100-Q1 LM66100-Q1 www.ti.com SLVSGD6A – NOVEMBER 2021 – REVISED MARCH 2022 9.2.3.2 Application Curves The figures below show the switchover performance between VIN1 and VIN2. Figure 9-7. Switchover From VIN1 5 V to VIN2 3.3 V Figure 9-8. Switchover From VIN2 3.3 V to VIN1 5 V 10 Power Supply Recommendations The device is designed to operate with a VIN range of 1.5 V to 5.5 V. The VIN power supply must be well regulated and placed as close to the device terminal as possible. The power supply must be able to withstand all transient load current steps. In most situations, using an input capacitance (CIN) of 1 μF is sufficient to prevent the supply voltage from dipping when the switch is turned on. In cases where the power supply is slow to respond to a large transient current or large load current step, additional bulk capacitance can be required on the input. Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: LM66100-Q1 15 LM66100-Q1 www.ti.com SLVSGD6A – NOVEMBER 2021 – REVISED MARCH 2022 11 Layout 11.1 Layout Guidelines For best performance, all traces must be as short as possible. To be most effective, place the input and output capacitors close to the device to minimize the effects that parasitic trace inductances can have on normal operation. Using wide traces for VIN, VOUT, and GND helps minimize the parasitic electrical effects. 11.2 Layout Example Figure 11-1. LM66100-Q1 Layout Example 16 Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: LM66100-Q1 LM66100-Q1 www.ti.com SLVSGD6A – NOVEMBER 2021 – REVISED MARCH 2022 12 Device and Documentation Support 12.1 Receiving Notification of Documentation Updates To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper right corner, click on Alert me to register and receive a weekly digest of any product information that has changed. For change details, review the revision history included in any revised document. 12.2 Support Resources TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight from the experts. Search existing answers or ask your own question to get the quick design help you need. Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. 12.3 Trademarks TI E2E™ is a trademark of Texas Instruments. All trademarks are the property of their respective owners. 12.4 Electrostatic Discharge Caution This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. 12.5 Glossary TI Glossary This glossary lists and explains terms, acronyms, and definitions. 13 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: LM66100-Q1 17 PACKAGE OPTION ADDENDUM www.ti.com 26-Oct-2023 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) Samples (4/5) (6) LM66100QDCKRQ1 ACTIVE SC70 DCK 6 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 1IW (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of