LM66100-Q1
SLVSGD6A – NOVEMBER 2021 – REVISED MARCH 2022
LM66100-Q1 5.5-V, 1.5-A 79-mΩ, Automotive, Low IQ Ideal Diode with Input Polarity
Protection
1 Features
3 Description
•
The LM66100-Q1 is a Single-Input, Single-Output
(SISO) integrated ideal diode that is well suited for
a variety of applications. The device contains a Pchannel MOSFET that can operate over an input
voltage range of 1.5 V to 5.5 V and can support a
maximum continuous current of 1.5 A.
•
•
•
•
•
•
•
AEC-Q100 qualified for automotive applications:
– Device temperature grade 1: –40°C to 125°C
ambient operating temperature range
Wide operating voltage range: 1.5 V–5.5 V
Reverse voltage standoff on VIN:
–6-V absolute maximum
Maximum continuous current (IMAX): 1.5 A
On-Resistance (RON):
– 5-V VIN = 79 mΩ (typical)
– 3.6-V VIN = 91 mΩ (typical)
– 1.8-V VIN = 141 mΩ (typical)
Comparator chip enable (CE)
Channel status indication (ST)
Low current consumption:
– 3.6-V VIN shutdown current (ISD,VIN): 120 nA
(typical)
– 3.6-V VIN quiescent current (IQ, VIN): 150 nA
(typical)
2 Applications
•
•
•
•
Infotainment and cluster head unit
Automotive cluster display
ADAS surround view system ECU
Body control module and gateway
The chip enable works by comparing the CE pin
voltage to the input voltage. When the CE pin voltage
is higher than VIN, the device disables and the
MOSFET is off. When the CE pin voltage is lower,
the MOSFET is on. The LM66100-Q1 also comes
with reverse polarity protection (RPP) that can protect
the device from a miswired input, such as a reversed
battery.
Two LM66100-Q1 devices can be used in an
ORing configuration similar to a dual diode ORing
implementation. In this configuration, the devices pass
the highest input voltage to the output while blocking
reverse current flow into the input supplies. These
devices can compare input and output voltages to
make sure that reverse current is blocked through an
internal voltage comparator.
The LM66100-Q1 is available in a standard SC-70
package characterized for operation over a junction
temperature range of –40°C to 150°C.
(1)
Device Information
PART NUMBER
LM66100-Q1
(1)
PACKAGE
SC-70 (6)
BODY SIZE (NOM)
2.1 mm × 2.0 mm
For all available packages, see the orderable addendum at
the end of the data sheet.
Typical Application
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
LM66100-Q1
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Table of Contents
1 Features............................................................................1
2 Applications..................................................................... 1
3 Description.......................................................................1
4 Revision History.............................................................. 2
5 Pin Configuration and Functions...................................3
6 Specifications.................................................................. 4
6.1 Absolute Maximum Ratings........................................ 4
6.2 ESD Ratings............................................................... 4
6.3 Recommended Operating Conditions.........................4
6.4 Thermal Information....................................................4
6.5 Electrical Characteristics.............................................5
6.6 Switching Characteristics............................................6
6.7 Typical Characteristics................................................ 7
7 Parameter Measurement Information............................ 9
8 Detailed Description......................................................10
8.1 Overview................................................................... 10
8.2 Functional Block Diagram......................................... 10
8.3 Feature Description...................................................11
8.4 Device Functional Modes..........................................12
9 Application and Implementation.................................. 12
9.1 Application Information............................................. 12
9.2 Typical Applications.................................................. 12
10 Power Supply Recommendations..............................15
11 Layout........................................................................... 16
11.1 Layout Guidelines................................................... 16
11.2 Layout Example...................................................... 16
12 Device and Documentation Support..........................17
12.1 Receiving Notification of Documentation Updates..17
12.2 Support Resources................................................. 17
12.3 Trademarks............................................................. 17
12.4 Electrostatic Discharge Caution..............................17
12.5 Glossary..................................................................17
13 Mechanical, Packaging, and Orderable
Information.................................................................... 17
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision * (November 2021) to Revision A (March 2022)
Page
• Changed data sheet status from "Advance Information" to "Production Data"...................................................1
2
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5 Pin Configuration and Functions
Figure 5-1. DCK Package 6-Pin SC-70 Top View
Table 5-1. Pin Functions
PIN
NO.
NAME
I/O
DESCRIPTION
1
VIN
I
2
GND
—
Device input
3
CE
I
4
N/C
—
Not internally connected, can be tied to GND or left floating.
5
ST
O
Active-low open-drain output, pulled low when the chip is disabled. Hi-Z when the chip is
enabled. Connect to GND if not required.
6
VOUT
O
Device output
Device ground
Active-low chip enable. Can be connected to VOUT for reverse current protection. Do not
leave floating.
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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
MIN
MAX
UNIT
VIN
Maximum Input Voltage Range
–6
6
V
VOUT
Maximum Output Voltage Range
–0.3
6
V
VCE
Maximum CE Pin Voltage
–0.3
6
V
VST
Maximum ST Pin Voltage
–0.3
6
V
ISW, MAX
Maximum Continuous Switch Current
1.5
A
ISW, PLS
Maximum Pulsed Switch Current (≤120 ms, 2% Duty Cycle)
2.5
A
ID, PLS
Maximum Pulsed Body Diode Current (≤0.1 ms, 0.2% Duty Cycle)
ICE
Maximum CE Pin Current
IST
Maximum ST Pin Current
TJ
Junction temperature
–40
150
°C
TSTG
Storage temperature
–65
150
°C
TLEAD
Maximum Lead Temperature (10 s soldering time)
300
°C
(1)
2.5
A
–1
mA
–1
mA
Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply
functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions.
If used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully
functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime.
6.2 ESD Ratings
VALUE
V(ESD)
(1)
Electrostatic discharge
Human body model (HBM), per AEC Q100002(1)
HBM ESD classification level 2
±2000
Charged device model (CDM), per AEC Q100011
CDM ESD classification level C4A
±500
UNIT
V
AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
VIN
Input Voltage Range
VOUT
VCE
VST
TYP
MAX
UNIT
1.5
5.5
V
Output Voltage Range
1
5.5
V
CE Pin Voltage Range
0
5.5
V
ST Pin Voltage Range
0
5.5
V
6.4 Thermal Information
LM66100
THERMAL METRIC(1)
DCK (SC-70)
UNIT
6 PINS
4
RθJA
Junction-to-ambient thermal resistance
192
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
124
°C/W
RθJB
Junction-to-board thermal resistance
52
°C/W
ΨJT
Junction-to-top characterization parameter
34
°C/W
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LM66100
THERMAL METRIC(1)
DCK (SC-70)
UNIT
6 PINS
ΨJB
(1)
Junction-to-board characterization parameter
52
°C/W
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6.5 Electrical Characteristics
Typical values are at 25°C with an input voltage of 3.6V. Maximum and minimum values are across the entire operating
voltage range, from 1.5V to 5.5V. (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX
UNI
T
0.12
0.3
µA
0.3
µA
0.3
µA
0.3
µA
0.5
µA
2.7
µA
Input Supply (VIN)
VIN Shutdown Current
VOUT = VIN
VCE > VIN + 80 mV
IOUT = 0 A (VOUT = open)
25°C
ISD,VIN
VIN Quiescent Current
VOUT = VIN
VCE < VIN – 250 mV
IOUT = 0 A (VOUT = open)
25°C
IQ,VIN
–40°C to 125°C
0.15
–40°C to 125°C
25°C
VOUT – VIN ≤ 5.5 V
VCE > VIN + 80 mV
0.2
–40°C to 85°C
–40°C to 125°C
IOUT, OFF
OUT to IN Leakage Current
(Current out of VIN)
8
µA
VOUT – VIN ≤ 4.5 V
VCE > VIN + 80 mV
–40°C to 85°C
1.7
µA
–40°C to 125°C
5.1
µA
VOUT – VIN ≤ 1.0 V
VCE > VIN + 80 mV
–40°C to 85°C
0.7
µA
–40°C to 125°C
2.1
µA
ON-Resistance (RON)
25°C
RON
ON-State Resistance
IOUT = –200 mA
VIN = 5 V
79
–40°C to 85°C
110 mΩ
–40°C to 125°C
120
25°C
RON
ON-State Resistance
IOUT = –200 mA
VIN = 3.6 V
91
140
25°C
ON-State Resistance
IOUT = –200 mA
VIN = 1.8 V
110
125 mΩ
–40°C to 85°C
–40°C to 125°C
RON
95
141
180
–40°C to 85°C
210 mΩ
–40°C to 125°C
230
Comparator Chip Enable (CE)
VON
Turn ON Threshold
VCE – VIN
–40°C to 125°C
–250 –150
–80 mV
VOFF
Turn OFF Threshold
VCE – VIN
–40°C to 125°C
0
35
ICE
CE Pin Leakage Current
VCE < VIN – 250 mV
–40°C to 125°C
0
160
300
nA
ICE
CE Pin Leakage Current
VCE > VIN + 80 mV
–40°C to 125°C
0
400
610
nA
0.5
1
A
0.5
1.1
V
80 mV
Reverse Current Blocking (RCB) and Body Diode Characteristics
IRCB
VFWD
Reverse Activation Current
VCE = VOUT
–40°C to 125°C
Body Diode Forward Voltage
IOUT = 10 mA
VCE > VIN + 80 mV
–40°C to 125°C
0.1
Status Indication (ST)
VOL, ST
Output Low Voltage
IST = 1 mA
–40°C to 125°C
tST
Status Delay Time
VCE transitions from low to high
–40°C to 125°C
0.1
1
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6.5 Electrical Characteristics (continued)
Typical values are at 25°C with an input voltage of 3.6V. Maximum and minimum values are across the entire operating
voltage range, from 1.5V to 5.5V. (unless otherwise noted)
PARAMETER
IST
ST Pin Leakage Current
TEST CONDITIONS
VCE < VIN – 250 mV
–40°C to 125°C
MIN TYP MAX
UNI
T
–20
nA
20
6.6 Switching Characteristics
Unless otherwise noted, the typical characteristics in the following table applies over the entire recommended operating
voltage at an ambient temperature of 25°C and a load of CL = 100 nF and RL = 1 kΩ
PARAMETER
tON
tOFF
tFALL
6
Turn ON Time
Turn OFF Time
Output Fall Time
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VIN = 1.8 V
90
µs
VIN = 3.6 V
40
µs
VIN = 5 V
27
µs
VIN = 1.8 V
2
µs
VIN = 3.6 V
2
µs
VIN = 5 V
2
µs
VIN = 1.8 V
20
µs
VIN = 3.6 V
10
µs
VIN = 5 V
7.5
µs
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6.7 Typical Characteristics
240
200
180
160
140
120
100
160
140
120
100
80
60
80
40
60
1.5
20
1.5
2
2.5
3
3.5
4
Input Voltage (V)
4.5
5
5.5
2
3
3.5
4
Input Voltage (V)
4.5
5
5.5
D002
VCE < VIN
Figure 6-1. Shutdown Current vs Input Voltage
Figure 6-2. Quiescent Current vs Input Voltage
1200
180
VOUT - VIN = 1V
VOUT - VIN = 4.5V
VOUT - VIN = 5.5V
160
On-Resistance (m:)
1000
800
600
400
120
100
80
-20
0
20
40
60
Temperature (qC)
80
100
60
-40
120
-20
0
D003
VCE > VIN
VCE < VIN
Figure 6-3. Reverse Leakage Current vs Junction Temperature
20
40
60
Temperature (qC)
80
100
120
D004
IOUT = 200 mA
Figure 6-4. On-Resistance vs Junction Temperature
-50
65
-40qC
25qC
85qC
105qC
-40qC
25qC
85qC
105qC
60
Turn OFF Threshold (V)
-75
-100
-125
-150
-175
-200
1.5
VIN = 1.8V
VIN = 3.6V
VIN = 5V
140
200
0
-40
Turn ON Threshold (V)
2.5
D001
VCE > VIN
VOUT to VIN Leakage Current (nA)
-40qC
25qC
85qC
105qC
180
Quiescent Current (nA)
Shutdown Current (nA)
220
200
-40qC
25qC
85qC
105qC
55
50
45
40
35
30
2
2.5
3
3.5
4
Input Voltage (V)
4.5
5
5.5
25
1.5
D007
Figure 6-5. Turn ON Threshold vs Input Voltage
2
2.5
3
3.5
4
Input Voltage (V)
4.5
5
5.5
D008
Figure 6-6. Turn OFF Threshold vs Input Voltage
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0.6
120
0.5
100
Turn ON Time (Ps)
Forward Voltage (V)
6.7 Typical Characteristics (continued)
0.4
0.3
0.2
-40qC
25qC
85qC
105qC
0.1
0
1.5
2
2.5
VCE > VIN
3
3.5
4
Input Voltage (V)
4.5
5
VIN = 1.8V
VIN = 3.6V
VIN = 5V
80
60
40
20
0
-40
5.5
-20
0
D005
IOUT = 10 mA
CL = 100 nF
Figure 6-7. Body Diode Forward Voltage vs Input Voltage
20
40
60
80
Junction Temperature (qC)
120
D009
RL = 1 kΩ
Figure 6-8. Turn ON Time vs Junction Temperature
22
10
VIN = 1.8V
VIN = 3.6V
VIN = 5V
20
8
18
Fall Time (Ps)
Turn OFF Time (Ps)
100
6
4
16
14
12
10
2
8
0
-40
4
-40
6
-20
0
20
40
60
80
Junction Temperature (qC)
CL = 100nF
RL = 1 kΩ
100
120
VIN = 1.8 V to 5 V
Figure 6-9. Turn OFF Time vs Junction Temperature
8
-20
0
D010
CL = 100 nF
20
40
60
80
Junction Temperature (qC)
100
120
D011
RL = 1 kΩ
Figure 6-10. Fall Time vs Junction Temperature
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7 Parameter Measurement Information
Figure 7-1. Timing Diagram
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8 Detailed Description
8.1 Overview
The LM66100-Q1 is a Single-Input, Single-Output (SISO) integrated ideal diode that contains a P-channel
MOSFET to minimize the voltage drop from input to output. The LM66100-Q1 can operate over an input voltage
range of 1.5 V to 5.5 V and support a maximum continuous current of 1.5 A.
The chip enable works by comparing the CE pin voltage to the input voltage. When the CE pin voltage is higher
than VIN by 80 mV, the device is disabled and the MOSFET is off. When the CE pin voltage is lower than VIN
by 250 mV, the MOSFET is on. The LM66100-Q1 also comes with reverse polarity protection (RPP) that protects
against events where the VIN and GND terminals are swapped.
8.2 Functional Block Diagram
10
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8.3 Feature Description
8.3.1 Reverse Polarity Protection (RPP)
In the event a negative input voltage is applied, the ideal diode stays off and prevent current flow to protect the
system load. For a stand-alone, always on application, CE can be tied to GND so it does not go negative with
respect to GND. See Figure 8-1.
Figure 8-1. RPP Protection Circuit
8.3.2 Always-ON Reverse Current Blocking (RCB)
By connecting the CE pin to VOUT, this allows the comparator to detect reverse current flow through the switch.
If the output is forced above the selected input by VOFF, the channel switches off to stop the reverse current IRCB
within tOFF. Once the output falls below VIN by VON, the device turns back on.
Figure 8-2. RCB Circuit
Figure 8-3. RCB Waveforms
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8.4 Device Functional Modes
Table 8-1 summarizes the Device Functional Modes:
Table 8-1. Device Functional Modes
State
IN-to-OUT
Power Dissipation
ST State
OFF
Diode
IOUT × VFWD
L
ON
2
Switch
IOUT × RON
H
9 Application and Implementation
Note
Information in the following applications sections is not part of the TI component specification,
and TI does not warrant its accuracy or completeness. TI’s customers are responsible for
determining suitability of components for their purposes, as well as validating and testing their design
implementation to confirm system functionality.
9.1 Application Information
The LM66100-Q1 Ideal Diode can be used in a variety of stand-alone and multi-channel applications.
9.2 Typical Applications
9.2.1 Dual Ideal Diode ORing
Two LM66100-Q1 Ideal Diodes can be used together for ORing between two power supplies.
Figure 9-1. Dual Ideal Diode ORing
9.2.1.1 Design Requirements
Design a circuit that allows the highest input voltage to power a downstream system while providing reverse
current protection.
9.2.1.2 Detailed Design Procedure
This circuit ties the CE of each device to the opposite power source. In this configuration, the highest supply is
always selected using a make-before-break logic. This selection prevents any reverse current flow between the
supplies and avoids the need of a dedicated reverse current blocking comparator. For ORing applications that
need RPP, TI recommends to use a series resistor (RCE) to limit the current into the CE pin during a negative
voltage event.
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9.2.1.3 Application Curves
The below scope shot shows the output voltage (VOUT) being initially powered by VIN1. When VIN2 is applied,
it powers VOUT because it is a higher voltage. When VIN2 is removed, VOUT is once again powered by VIN1.
Figure 9-2. Dual Ideal Diode ORing Behavior
9.2.2 Dual Ideal Diode ORing for Continuous Output Power
Figure 9-3. Dual Ideal Diode ORing for Continuous Output Power
9.2.2.1 Design Requirements
The shortcoming of the previous implementation happens when both input voltages are the same for a long
period of time. Then, both devices completely turn off, powering down the output load. To avoid this case, use
the status output from the priority supply and a pullup resistor, causing both devices to switchover at the same
time. For ORing applications that need RPP, TI recommends to use a series resistor (RCE) to limit the current
into the CE pin during a negative voltage event.
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9.2.2.2 Application Curves
The figures below show the switchover performance between VIN1 and VIN2.
Figure 9-4. Switchover From VIN1 (5 V) to VIN2 (3.3 Figure 9-5. Switchover From VIN2 (3.3 V) to VIN1 (5
V)
V)
9.2.3 ORing with Discrete MOSFET
Figure 9-6. ORing with a Discrete MOSFET
9.2.3.1 Design Requirements
Similar to the Dual Ideal Diode circuit, the Status Output can also be used to control a discrete P-Channel
MOSFET. This action can be useful in applications that want to minimize the leakage current on the secondary
supply, such as battery backup systems. This configuration can also be used on systems that require a lower
RON on the secondary rail, useful for higher current applications.
When the Ideal Diode path is enabled, the status is Hi-Z and pulls up the gate of the external PFET to keep it
off. When the main supply (VIN1) drops such that backup supply (VIN2) is higher than VIN1, the ideal diode is
disabled and pulls the ST pin and the PFET gate low to turn on the discrete MOSFET path.
14
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9.2.3.2 Application Curves
The figures below show the switchover performance between VIN1 and VIN2.
Figure 9-7. Switchover From VIN1 5 V to VIN2 3.3 V Figure 9-8. Switchover From VIN2 3.3 V to VIN1 5 V
10 Power Supply Recommendations
The device is designed to operate with a VIN range of 1.5 V to 5.5 V. The VIN power supply must be well
regulated and placed as close to the device terminal as possible. The power supply must be able to withstand
all transient load current steps. In most situations, using an input capacitance (CIN) of 1 μF is sufficient to
prevent the supply voltage from dipping when the switch is turned on. In cases where the power supply is slow to
respond to a large transient current or large load current step, additional bulk capacitance can be required on the
input.
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11 Layout
11.1 Layout Guidelines
For best performance, all traces must be as short as possible. To be most effective, place the input and output
capacitors close to the device to minimize the effects that parasitic trace inductances can have on normal
operation. Using wide traces for VIN, VOUT, and GND helps minimize the parasitic electrical effects.
11.2 Layout Example
Figure 11-1. LM66100-Q1 Layout Example
16
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12 Device and Documentation Support
12.1 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
12.2 Support Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
12.3 Trademarks
TI E2E™ is a trademark of Texas Instruments.
All trademarks are the property of their respective owners.
12.4 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
12.5 Glossary
TI Glossary
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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Copyright © 2022 Texas Instruments Incorporated
Product Folder Links: LM66100-Q1
17
PACKAGE OPTION ADDENDUM
www.ti.com
26-Oct-2023
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
LM66100QDCKRQ1
ACTIVE
SC70
DCK
6
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
1IW
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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