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LM7301
SNOS879I – AUGUST 1999 – REVISED MAY 2016
LM7301 Low Power, 4-MHz GBW, Rail-to-Rail Input-Output Operational Amplifier in
SOT-23 Package
1 Features
3 Description
•
•
•
The LM7301 provides high performance in a wide
range of applications. The LM7301 offers greater than
rail-to-rail input range, full rail-to-rail output swing,
large capacitive load driving ability, and low distortion.
1
•
•
•
•
•
•
•
At VS = 5 V (Typical Unless Otherwise Noted)
Tiny, Space-Saving, 5-Pin SOT-23 Package
Greater than Rail-to-Rail Input CMVR: −0.25 V to
5.2 V
Rail-to-Rail Output Swing: 007 V to 4.93 V
Wide Gain-Bandwidth: 4 MHz
Low Supply Current: 0.6 mA
Wide Supply Range: 1.8 V to 32 V
High PSRR: 104 dB
High CMRR: 93 dB
Excellent Gain: 97 dB
2 Applications
•
•
•
•
•
Portable Instrumentation
Signal Conditioning Amplifiers/ADC Buffers
Active Filters
Modems
PCMCIA Cards
With only 0.6-mA supply current, the 4-MHz gainbandwidth of this device supports new portable
applications
where
higher
power
devices
unacceptably drain battery life.
The LM7301 can be driven by voltages that exceed
both power supply rails, thus eliminating concerns
over exceeding the common-mode voltage range.
The rail-to-rail output swing capability provides the
maximum possible dynamic range at the output. This
is particularly important when operating on low supply
voltages.
Operating on supplies of 1.8 V to 32 V, the LM7301 is
excellent for a very wide range of applications in low
power systems.
Placing the amplifier right at the signal source
reduces board size and simplifies signal routing. The
LM7301 fits easily on low profile PCMCIA cards.
Device Information(1)
PART NUMBER
LM7301
PACKAGE
BODY SIZE (NOM)
SOIC (8)
4.90 mm × 3.91 mm
SOT-23 (5)
2.90 mm × 1.60 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Gain and Phase
Gain and Phase, 2.7-V Supply
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
LM7301
SNOS879I – AUGUST 1999 – REVISED MAY 2016
www.ti.com
Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
6.1
6.2
6.3
6.4
6.5
6.6
6.7
6.8
6.9
4
4
4
4
5
6
6
7
9
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics: 5-V DC.............................
Electrical Characteristics: AC....................................
Electrical Characteristics: 2.2-V DC..........................
Electrical Characteristics: 30-V DC...........................
Typical Characteristics ..............................................
Detailed Description ............................................ 12
7.1 Overview ................................................................. 12
7.2 Feature Description................................................. 12
7.3 Device Functional Modes........................................ 14
8
Applications and Implementation ...................... 16
8.1 Application Information............................................ 16
8.2 Typical Applications ................................................ 16
9 Power Supply Recommendations...................... 19
10 Layout................................................................... 19
10.1 Layout Guidelines ................................................. 19
10.2 Layout Example .................................................... 19
11 Device and Documentation Support ................. 20
11.1
11.2
11.3
11.4
Community Resource............................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
20
20
20
20
12 Mechanical, Packaging, and Orderable
Information ........................................................... 20
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision H (March 2013) to Revision I
Page
•
Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section ................................................................................................. 1
•
Changed 58°C to 42°C in Power Dissipation ....................................................................................................................... 15
•
Changed 113°C to 59°C in Power Dissipation ..................................................................................................................... 15
•
Changed 29°C to 21°C in Power Dissipation ....................................................................................................................... 15
•
Changed 57°C to 30°C in Power Dissipation ....................................................................................................................... 15
Changes from Revision G (March 2013) to Revision H
•
2
Page
Changed layout of National Semiconductor Data Sheet to TI format .................................................................................. 16
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SNOS879I – AUGUST 1999 – REVISED MAY 2016
5 Pin Configuration and Functions
D Package
8-Pin SOIC
Top View
DBV Package
5-Pin SOT-23
Top View
Pin Functions
PIN
NAME
I/O
DESCRIPTION
SOIC
SOT-23
–IN
2
4
I
Inverting input voltage
+IN
3
3
I
Noninverting input voltage
N/C
1, 5, 8
—
—
No connection
OUT
6
1
O
Output
V–
4
2
I
Negative supply
V+
7
5
I
Positive supply
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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1) (2)
MIN
MAX
UNIT
15
V
(V ) – 0.3
V
Differential input voltage
+
Voltage at input and output pin
–
(V ) + 0.3
Supply voltage (V+ − V−)
35
V
Current at input pin
±10
mA
Current at output pin (3)
±20
mA
Current at power supply pin
25
mA
Junction temperature, TJ (4)
150
°C
150
°C
Storage temperature, Tstg
(1)
(2)
(3)
(4)
–65
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
If Military/Aerospace specified devices are required, contact the Texas Instruments Sales Office/Distributors for availability and
specifications.
Applies to both single-supply and split-supply operation. Continuous short-circuit operation at elevated ambient temperature can result in
exceeding the maximum allowed junction temperature of 150°C.
The maximum power dissipation is a function of TJ(MAX), RθJA, and TA. The maximum allowable power dissipation at any ambient
temperature is PD = (TJ(MAX) − TA)/RθJA. All numbers apply for packages soldered directly into a PC board.
6.2 ESD Ratings
V(ESD)
(1)
VALUE
UNIT
±2500
V
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
Electrostatic discharge
JEDEC document JEP155 states that 2500-V HBM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted) (1)
MIN
Supply voltage
Operating temperature
(1)
(2)
MAX
UNIT
32
V
–40
85
°C
5-pin SOT-23
325
325
°C/W
8-pin SOIC
165
165
°C/W
(2)
Package thermal resistance (RθJA) (2)
NOM
1.8
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not ensured. For ensured specifications and the test
conditions, see the Electrical Characteristics.
The maximum power dissipation is a function of TJ(MAX), RθJA, and TA. The maximum allowable power dissipation at any ambient
temperature is PD = (TJ(MAX) − TA)/RθJA. All numbers apply for packages soldered directly into a PC board.
6.4 Thermal Information
LM7301
THERMAL METRIC
(1)
DBV (SOT-23)
D (SOIC)
5 PINS
8 PINS
UNIT
RθJA
Junction-to-ambient thermal resistance
169
120
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
122
65
°C/W
RθJB
Junction-to-board thermal resistance
30
61
°C/W
ψJT
Junction-to-top characterization parameter
17
16
°C/W
ψJB
Junction-to-board characterization parameter
29
60
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
N/A
N/A
°C/W
(1)
4
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
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6.5 Electrical Characteristics: 5-V DC
Unless otherwise specified, all limits ensured for TA = 25°C, V+ = 5V, V− = 0V, VCM = VO = V+/2 and RL > 1MΩ to V+/2 unless
noted that limits apply at the temperature extremes. (1) (2) (3)
PARAMETER
VOS
Input offset voltage
TCVOS
Input offset voltage average
drift
TEST CONDITIONS
TA = TJ
TA = 25°C
0.7
0.7
TA = TJ
Power supply rejection ratio
2.2 V ≤ V+ ≤ 30 V
VCM
Input common-mode voltage
range
CMRR ≥ 65 dB
AV
Large signal voltage gain
RL = 10 kΩ
VO = 4 VPP
39
TA = 25°C
70
TA = TJ
67
TA = 25°C
87
TA = TJ
84
TA = 25°C
14
TA = TJ
10
Output swing
TA = TJ
IS
(1)
(2)
(3)
Supply current
104
dB
V
TA = 25°C
TA = TJ
4.88
0.12
0.15
4.85
0.14
0.2
V
0.22
4.80
4.87
4.78
8
11
5.5
6
TA = TJ
5
mA
9.5
0.6
TA = TJ
V/mV
4.93
TA = 25°C
TA = 25°C
71
0.07
TA = 25°C
RL = 2 kΩ
Sinking
dB
5.1
TA = TJ
Output short-circuit current
MΩ
88
−0.1
RL = 10 kΩ
ISC
nA
93
TA = 25°C
Sourcing
55
65
0 V ≤ VCM ≤ 5 V
PSRR
nA
70
80
TA = 25°C
0 V ≤ VCM ≤ 3.5 V
VO
−75
TA = TJ
0 V ≤ VCM ≤ 5 V
mV
−85
TA = 25°C
VCM = 5 V
Common mode rejection ratio
−40
TA = TJ
Input offset current
CMRR
200
250
TA = 25°C
UNIT
μV/°C
90
TA = TJ
VCM = 0 V
Input resistance, CM
6
2
VCM = 5 V
RIN
MAX
0.03
8
Input bias current
IOS
TYP
TA = TJ
VCM = 0 V
IB
MIN
TA = 25°C
1.1
1.24
mA
All limits are ensured by testing or statistical analysis.
Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and will also depend on the application and configuration. The typical values are not tested and are not ensured on shipped
production material.
Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the devices such that TJ = TA. No ensure of parametric performance is indicated in the electrical tables under
conditions of internal self-heating where TJ > TA.
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6.6 Electrical Characteristics: AC
TA = 25°C, V+ = 2.2 V to 30 V, V− = 0 V, VCM = VO = V+/2 and RL > 1 MΩ to V+/2 (1)
PARAMETER
TEST CONDITIONS
SR
Slew rate
±4-V Step at VS ±6 V
GBW
Gain-bandwidth product
f = 100 kHz, RL = 10 kΩ
en
Input-referred voltage noise
in
Input-referred current noise
T.H.D.
Total harmonic distortion
f = 10 kHz
(1)
(2)
TYP
(2)
UNIT
1.25
V/µs
4
MHz
f = 1 kHz
36
nV/√Hz
f = 1 kHz
0.24
pA/√Hz
0.006%
Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the devices such that TJ = TA. No ensure of parametric performance is indicated in the electrical tables under
conditions of internal self-heating where TJ > TA.
Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and will also depend on the application and configuration. The typical values are not tested and are not ensured on shipped
production material.
6.7 Electrical Characteristics: 2.2-V DC
Unless otherwise specified, all limits ensured for TA = 25°C, V+ = 2.2 V, V− = 0 V, VCM = VO = V+/2 and RL > 1 MΩ to V+/2
unless noted that limits apply at the temperature. (1) (2)
PARAMETER
VOS
Input offset voltage
TCVOS
Input offset voltage average
drift
TEST CONDITIONS
TA = TJ
TA = 25°C
−75
TA = TJ
−85
0.8
Input offset current
0.4
TA = TJ
CMRR
Common-mode rejection ratio 0 V ≤ VCM ≤ 2.2 V
PSRR
Power supply rejection ratio
2.2 V ≤ V+ ≤ 30 V
VCM
Input common-mode voltage
range
CMRR > 60 dB
AV
Large signal voltage gain
RL = 10 kΩ
VO = 1.6 VPP
RL = 10 kΩ
Output swing
18
TA = 25°C
60
TA = TJ
56
TA = 25°C
87
TA = TJ
84
dB
104
dB
2.3
V
–0.1
TA = 25°C
6.5
TA = TJ
5.4
TA = 25°C
TA = 25°C
TA = TJ
nA
MΩ
82
46
0.05
V/mV
0.08
2.15
TA = TJ
RL = 2 kΩ
55
65
0 V ≤ VCM ≤ 2.2 V
Input resistance
nA
70
80
TA = 25°C
mV
200
−35
TA = TJ
RIN
6
TA = 25°C
UNIT
µV/°C
250
TA = 25°C
VCM = 2.2 V
(2)
89
TA = TJ
VCM = 0 V
(1)
6
2
VCM = 2.2 V
VO
MAX
0.04
8
Input bias current
IOS
TYP
TA = TJ
VCM = 0 V
IB
MIN
TA = 25°C
0.1
0.09
V
0.13
0.14
Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and will also depend on the application and configuration. The typical values are not tested and are not ensured on shipped
production material.
All limits are ensured by testing or statistical analysis.
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Electrical Characteristics: 2.2-V DC (continued)
Unless otherwise specified, all limits ensured for TA = 25°C, V+ = 2.2 V, V− = 0 V, VCM = VO = V+/2 and RL > 1 MΩ to V+/2
unless noted that limits apply at the temperature. (1)(2)
PARAMETER
TEST CONDITIONS
TA = 25°C
Sourcing
ISC
TA = TJ
Output short-circuit current
Sinking
IS
Supply current
MIN
TYP
8
10.9
MAX
5.5
TA = 25°C
6
TA = TJ
5
TA = 25°C
mA
7.7
0.57
TA = TJ
UNIT
0.97
1.24
mA
6.8 Electrical Characteristics: 30-V DC
Unless otherwise specified, all limits ensured for TA = 25°C, V+ = 30 V, V− = 0 V, VCM = VO = V+/2 and RL > 1 MΩ to V+/2
unless noted that limits apply at the temperature (1)
PARAMETER
VOS
Input offset voltage
TCVOS
Input offset voltage average
drift
TEST CONDITIONS
TA = TJ
TA = 25°C
−100
TA = TJ
−200
0.5
TA = TJ
0 V ≤ VCM ≤ 30 V
0 V ≤ VCM ≤ 27 V
PSRR
Power supply rejection ratio
2.2 V ≤ V+ ≤ 30 V
VCM
Input common-mode voltage
range
CMRR > 80 dB
AV
Large signal voltage gain
RL = 10 kΩ
VO = 28 VPP
200
TA = 25°C
80
TA = TJ
78
TA = 25°C
90
TA = TJ
88
TA = 25°C
87
TA = TJ
84
Output swing
RL = 10 kΩ
Sourcing
ISC
Output short-circuit current
(2)
Sinking (2)
(1)
(2)
MΩ
dB
115
104
dB
30.1
TA = 25°C
30
TA = TJ
20
V
105
0.16
TA = TJ
V/mV
0.275
0.375
TA = 25°C
29.75
TA = TJ
28.65
TA = 25°C
8.8
TA = TJ
6.5
TA = 25°C
8.2
TA = TJ
nA
104
−0.1
TA = 25°C
VO
65
135
0 V ≤ VCM ≤ 30 V
Common mode rejection ratio
nA
90
190
TA = 25°C
VCM = 30 V
mV
300
−50
1.2
UNIT
μV/°C
500
TA = 25°C
TA = TJ
Input offset current
CMRR
103
TA = 25°C
VCM = 0 V
Input resistance
6
TA = TJ
VCM = 30 V
RIN
MAX
0.04
2
Input bias current
IOS
TYP
8
VCM = 0 V
IB
MIN
29.8
V
11.7
11.5
mA
6
Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the devices such that TJ = TA. No ensure of parametric performance is indicated in the electrical tables under
conditions of internal self-heating where TJ > TA.
The maximum power dissipation is a function of TJ(MAX), RθJA, and TA. The maximum allowable power dissipation at any ambient
temperature is PD = (TJ(MAX) − TA)/RθJA. All numbers apply for packages soldered directly into a PC board.
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Electrical Characteristics: 30-V DC (continued)
Unless otherwise specified, all limits ensured for TA = 25°C, V+ = 30 V, V− = 0 V, VCM = VO = V+/2 and RL > 1 MΩ to V+/2
unless noted that limits apply at the temperature(1)
PARAMETER
IS
8
Supply current
TEST CONDITIONS
TA = 25°C
TA = TJ
MIN
TYP
MAX
0.72
1.3
1.35
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UNIT
mA
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6.9 Typical Characteristics
TA = 25°C, RL = 1 MΩ unless otherwise specified
Figure 1. Supply Current vs Supply Voltage
Figure 2. VOS vs Supply Voltage
Figure 3. VOS vs VCM VS = ±1.1 V
Figure 4. VOS vs VCM VS = ±2.5 V
Figure 5. VOS vs VCM VS = ±15 V
Figure 6. Inverting Input Bias Current vs Common Mode
Voltage VS = ±1.1 V
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Typical Characteristics (continued)
TA = 25°C, RL = 1 MΩ unless otherwise specified
10
Figure 7. Noninverting Input Bias Current vs Common Mode
Voltage VS = ±1.1 V
Figure 8. Inverting Input Bias Current vs Common Mode
Voltage VS = ±2.5 V
Figure 9. Noninverting Input Bias Current vs Common Mode
Voltage VS = ±2.5 V
Figure 10. Noninverting Input Bias Current vs Common
Mode Voltage VS = ±15 V
Figure 11. Inverting Input Bias Current vs Common Mode
Voltage VS = ±15 V
Figure 12. VO vs IO VS = ±1.1 V
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Typical Characteristics (continued)
TA = 25°C, RL = 1 MΩ unless otherwise specified
Figure 13. VO vs IO VS = ±2.5 V
Figure 14. Short-Circuit Current vs Supply Voltage
Figure 15. Voltage Noise vs Frequency
Figure 16. Current Noise vs Frequency
Figure 17. Gain and Phase
Figure 18. Gain and Phase, 2.7-V Supply
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7 Detailed Description
7.1 Overview
Low supply current, wide bandwidth, input common mode voltage range that includes both rails, rail-to-rail
output, good capacitive load driving ability, wide supply voltage (1.8 V to 32 V), and low distortion all make the
LM7301 ideal for many diverse applications.
The high common-mode rejection ratio and full rail-to-rail input range provides precision performance when
operated in noninverting applications where the common-mode error is added directly to the other system errors.
7.2 Feature Description
7.2.1 Capacitive Load Driving
The LM7301 has the ability to drive large capacitive loads. For example, 1000 pF only reduces the phase margin
to about 25°.
7.2.2 Transient Response
The LM7301 offers a very clean, well-behaved transient response. Figure 19, Figure 20, Figure 22, and
Figure 23 show the response when operated at gains of +1 and −1 when handling both small and large signals.
The large phase margin, typically 70° to 80°, assures clean and symmetrical response. In the large signal scope
photos, Figure 19 and Figure 22, the input signal is set to 4.8 V. The output goes to within 100 mV of the
supplies cleanly and without overshoot. In the small signal samples, the response is clean, with only slight
overshoot when used as a follower. Figure 21 and Figure 24 are the circuits used to make these photos.
Figure 20. AV = –1 V/V, Small Signal Behavior (0.2 V/div,
100 µs/div)
Figure 19. AV = –1 V/V, Large Signal Behavior (1 V/div,
2 µs/div)
10 NŸ
+2.5 V
10 NŸ
±
+
-2.5 V
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Figure 21. AV = –1 V/V Schematic
12
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Feature Description (continued)
Figure 22. AV = 1 V/V, Large Signal Behavior (1 V/div,
2 us/div)
Figure 23. AV = 1 V/V, Small Signal Behavior (0.2 V/div,
200 µs/div)
+2.5 V
±
+
-2.5 V
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Figure 24. AV = 1-V/V Schematic
7.2.3 Wide Supply Range
The high power-supply rejection ratio (PSRR) and common-mode rejection ratio (CMRR) provide precision
performance when operated on battery or other unregulated supplies. This advantage is further enhanced by the
very wide supply range (2.2 V to 30 V, ensured) offered by the LM7301. In situations where highly variable or
unregulated supplies are present, the excellent PSRR and wide supply range of the LM7301 benefit the system
designer with continued precision performance, even in such adverse supply conditions.
7.2.4 Specific Advantages of 5-Pin SOT-23 (TinyPak)
The obvious advantage of the 5-pin SOT-23, TinyPak, is that it can save board space, a critical aspect of any
portable or miniaturized system design. The need to decrease overall system size is inherent in any handheld,
portable, or lightweight system application.
Furthermore, the low profile can help in height limited designs, such as consumer hand-held remote controls,
sub-notebook computers, and PCMCIA cards.
An additional advantage of the tiny package is that it allows better system performance due to ease of package
placement. Because the tiny package is so small, it can fit on the board right where the operational amplifier
must be placed for optimal performance, unconstrained by the usual space limitations. This optimal placement of
the tiny package allows for many system enhancements that are not easily achieved with the constraints of a
larger package. For example, problems such as system noise due to undesired pickup of digital signals can be
easily reduced or mitigated. This pickup problem is often caused by long wires in the board layout going to or
from an operational amplifier. By placing the tiny package closer to the signal source and allowing the LM7301
output to drive the long wire, the signal becomes less sensitive to such pickup. An overall reduction of system
noise results.
Often times system designers try to save space by using dual or quad op amps in their board layouts. This
causes a complicated board layout due to the requirement of routing several signals to and from the same place
on the board. Using the tiny operational amplifier eliminates this problem.
Additional space savings parts are available in tiny packages from Texas Instruments, including low-power
amplifiers, precision-voltage references, and voltage regulators.
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Feature Description (continued)
7.2.5 Low-Distortion, High-Output Drive Capability
The LM7301 offers superior low-distortion performance, with a total-harmonic-distortion-plus-noise of 0.06% at f
= 10 kHz. The advantage offered by the LM7301 is its low distortion levels, even at high output current and low
load resistance. See Stability Considerations for methods used to ensure stability under all load conditions.
7.3 Device Functional Modes
7.3.1 Stability Considerations
Rail-to-rail output amplifiers like the LM7301 use the collector of the drive transistor(s) at the output pin, as
shown in Figure 25. This allows the load to be driven as close as possible towards either supply rail.
V+
+
VHZ
OUT
Ccomp
+
VCopyright © 2016, Texas Instruments Incorporated
Figure 25. Simplified Output Stage Block Diagram
While this architecture maximizes the load voltage swing range, it increases the dependence of loop gain and
subsequently stability, on load impedance and DC load current, compared to a non-rail-to-rail architecture. Thus,
with this type of output stage, it is even more crucial to ensure stability by meticulous bench verification under all
load conditions, and to apply the necessary compensation or circuit modifications to overcome any instability, if
necessary. Any such bench verification should also include temperature, supply voltage, input common mode
and output bias point variations as well as capacitive loading.
For example, one set of conditions for which stability of the LM7301 amplifier may be compromised is when the
DC output load is larger than ±0.5 mA, with input and output biased to mid-rail. Under such conditions, it may be
possible to observe open-loop gain response peaking at a high frequency (for example, 200 MHz), which is
beyond the expected frequency range of the LM7301 (4 MHz GBW). Without taking any precautions against gain
peaking, it is possible to see increased settling time or even oscillations, especially with low closed loop gain and
/ or light AC loading. It is possible to reduce or eliminate this gain peaking by using external compensation
components. One possible scheme that can be applied to reduce or eliminate this gain peaking is shown in
Figure 26.
LM7301
±
+
RC
100 Ÿ
Output
Snubber
Network
CC
100 pF
Copyright © 2016, Texas Instruments Incorporated
Figure 26. Non-Dissipating Snubber Network to Reduce Gain Peaking
14
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Device Functional Modes (continued)
The non-dissipating snubber, consisting of Rc and Cc, acts as AC load to reduce high-frequency gain peaking
with no DC loading so that total power dissipation is not increased. The increased AC load effectively reduces
loop gain at higher frequencies thereby reducing gain peaking due to the possible causes stated in the previous
sentence. For the particular set of Rc and Cc values shown in Figure 26, loop gain peaking is reduced by about
25 dB under worst case peaking conditions (I_source= 2mA DC at around 180 MHz) thus confining loop gain to
less than 0 dB and eliminating any possible instability. For best results, it may be necessary to tune the values of
Rc and Cc in a particular application to consider other subtleties and tolerances.
7.3.2 Power Dissipation
Although the LM7301 has internal output current limiting, shorting the output to ground when operating on a 30-V
power supply will cause the operational amplifier to dissipate about 350 mW. This is a worst-case example. In
the 8-pin SOIC package, this will cause a temperature rise of 42°C. In the 5-pin SOT-23 package, the higher
thermal resistance will cause a calculated rise of 59°C. This can raise the junction temperature to greater than
the absolute maximum temperature of 150°C.
Operating from split supplies greatly reduces the power dissipated when the output is shorted. Operating on
±15-V supplies can only cause a temperature rise of 21°C in the 8-pin SOIC and 30°C in the 5-pin SOT-23
package, assuming the short is to ground.
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8 Applications and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
8.1.1 Handheld Remote Controls
The LM7301 offers outstanding specifications for applications requiring good speed/power trade-off. In
applications such as remote control operation, where high bandwidth and low power consumption are needed,
the LM7301 performance can easily meet these requirements.
8.1.2 Remote Microphone in Personal Computers
Remote microphones in Personal Computers often use a microphone at the top of the monitor which must drive
a long cable in a high noise environment. One method often used to reduce the nose is to lower the signal
impedance, which reduces the noise pickup. In this configuration, the amplifier usually requires 30 db to 40 db of
gain, at bandwidths higher than most low-power CMOS parts can achieve. The LM7301 offers the tiny package,
higher bandwidths, and greater output drive capability than other rail-to-rail input/output parts can provide for this
application.
8.1.3 Optical Line Isolation for Modems
The combination of the low distortion and good load driving capabilities of the LM7301 make it an excellent
choice for driving opto-coupler circuits to achieve line isolation for modems. This technique prevents telephone
line noise from coupling onto the modem signal. Superior isolation is achieved by coupling the signal optically
from the computer modem to the telephone lines; however, this also requires a low distortion at relatively high
currents. Due to its low distortion at high-output drive currents, the LM7301 fulfills this need, in this and in other
telecom applications. See Stability Considerations for methods used to ensure stability under all load conditions.
8.2 Typical Applications
The circuit shown in Figure 27 uses the wide supply voltage range (1.8 V to 32 V), rail-to-rail input and output
voltage capability, and the unity gain stability of the LM7301 to sense the current flow from the power supply to a
load, such as a battery being charged, or any other load. The circuit creates a ground-referenced output voltage,
which varies linearly with the load current, for easy interface to the rest of the circuitry to create fault-protection,
current and power metering, or current regulation functions.
V+
+
R1
2k
R2
2k
RSENSE
0.2 Ÿ
+
±
Q1
2N3906
VOUT
C1
Optional
Load
R3
10 k
ICHARGE
VO U T
R SENSE u R 3
R1
u IC H A R G E
1 : u IC H A R G E
Copyright © 2016, Texas Instruments Incorporated
Figure 27. High Side Current Sensing
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Typical Applications (continued)
8.2.1 Design Requirements
The output port is designed for easy interface; it is ground-referenced and it produces 0 V with 0 A of load
current. A typical stage that follows this stage, an ADC which samples the load current for example, is easily
connected to the Q1 collector with no level shifting or additional biasing required.
Apart from a wide supply voltage capability, the operational amplifier used in Figure 27 must have an input
voltage range that includes the V+ rail voltage to allow high side current sensing. Furthermore, it should be unity
gain stable and have an output voltage range which is less than one Vbe from V+. The LM7301 has all these
requirements.
8.2.2 Detailed Design Procedure
8.2.2.1 Selecting RSENSE
Pick the value of RSENSE low enough to minimize its heat / voltage loss while observing Equation 1 for minimum
detectable load current, ICHARGE_MIN , and device offset voltage, VOS:
VOS
RSENSE >
ICHARGE_MIN
(1)
With the schematic values shown and LM7301's VOS limit of 6 mV:
ICHARGE _ MIN > 30 mA
(2)
If the system has the ability to be initialized and corrected for initial readings, it may be possible to lower the
value of RSENSE.
8.2.2.2 Selecting R1, and R3 Values
Pick the R3 / R1 ratio to get the proper full-scale VOUT when the maximum load current, ICHARGE_MAX, flows:
VOUT
R3
=
R1 RSENSE ´ ICHARGE _ MAX
(3)
For example, to get 3-V output with 3 A of load current when RSENSE = 0.2 Ω results in:
R3
=5
R1
(4)
Ensure that the resulting transfer function also satisfies the application’s need when the minimum load current,
ICHARGE_MIN is being sensed. In this example, the minimum output voltage will be 30 mV (when ICHARGE_MIN = 30
mA).
With the R3/R1 ratio determined, pick the value of R3 for Q1 collector current less than 1 mA at the maximum
VOUT, and determine R1 from that.
8.2.2.3 R1, R2 Selection
Normally, R2 is set equal to R1 to cancel out the error term due to the input bias current, IB (approximately 200
nA for the LM7301).
8.2.2.4 Error Terms Expressions
Here are the expressions for the output change caused by various parameter shifts, evaluated for Figure 27
values with ICHARGE_MAX= 3 A:
Offset Voltage, ΔVOS:
DVOS ´ R3
DVOUT =
= 5DVOS
R1
(5)
Offset current, IOS:
DI ´ R2 ´ R3
DVOUT = OS
= IOS ´ 10 k
R1
(6)
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Typical Applications (continued)
Self-heating of RSENSE causing ΔRSENSE with ICHARGE_MAX flowing:
R3
DVOUT = DRSENSE ´ ICHARGE _ MAX ´
= DRSENSE ´ 15
R1
(7)
8.2.2.5 Frequency Response
Depending on the application, it may be useful to have the means to control the upper end of the circuit’s
frequency response. An example is limiting the circuit’s response to high-frequency load current spikes or
switching frequencies so that the circuit only reacts to DC or lower frequencies. Capacitor C1 in Figure 27 can be
used to accomplish just that. The original circuit has a –3-dB bandwidth close to 4.5 MHz which can be reduced
by increasing the value of C1, as shown in Figure 28.
0
-2
-4
Response (dB)
-6
-8
-10
-12
-14
-16
-18
0
10 pF
100 pF
1 nF
10 nF
-20
100
1000
10000
100000
Frequency (Hz)
1000000
1E+7
D001
Figure 28. Current Sense Frequency Response vs C1 Value
8.2.3 Application Curves
Figure 29 shows the transfer function of the circuit for several values of RSENSE. Notice that with 1 Ω, the output
is limited to approximately 16 V because of the additional drop across the sense resistor at higher load currents.
Figure 30 shows the low-end of the load current is more non-linear for low RSENSE values, as noted in
Selecting RSENSE due to VOS. Higher RSENSE values help with this at the expense of a higher loss and voltage
drop.
0.1
18
0.1 :
0.2 :
0.5 :
1:
15
0.1 :
0.2 :
0.5 :
1:
0.08
VOUT (V)
VOUT (V)
12
9
0.06
0.04
6
0.02
3
0
0
0
18
1
2
3
I_CHARGE (Amp)
4
5
0
D002
0.02
0.04
0.06
I_CHARGE (A)
0.08
0.1
D003
Use lower sense resistor value to avoid voltage limitation!
Line showing linearity degradation at the lower end.
Figure 29. Current Sense Transfer Function for Various
RSENSE Values
Figure 30. Low-End Transfer Function for Various RSENSE
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9 Power Supply Recommendations
The LM7301 is specified for operation from 1.8 V to 32 V (±0.9 V to ±16 V). Being a rail-to-rail input and output
device, any operating voltage conditions within the supply voltage range can be accommodated.
Place 0.1-μF bypass capacitors close to the power-supply pins to reduce errors coupling in from noisy or highimpedance power supplies.
10 Layout
10.1 Layout Guidelines
For best operational performance of the device, TI recommends good printed-circuit board (PCB) layout
practices. Low-loss, 0.1-μF bypass capacitors should be connected between each supply pin and ground, placed
as close to the device as possible. A single bypass capacitor from V+ to ground is applicable to single supply
applications.
10.2 Layout Example
RIN
VIN
+
VOUT
RG
±
RF
Copyright © 2016, Texas Instruments Incorporated
Figure 31. Schematic Representation
Place components
close to device
and to each other
to reduce parasitic
errors
Run the input
traces as far away
from the supply
lines as possible
RF
NC
NC
±IN
V+
+IN
OUT
VS+
RG
GND
GND
RIN
VIN
Use low-ESR, ceramic
Bypass capacitor
V±
Only needed
for dual-supply
operation
GND
VS±
(or GND for single supply)
NC
VOUT
Copyright © 2016, Texas Instruments Incorporated
Figure 32. Operational Amplifier Board Layout for Noninverting Configuration
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11 Device and Documentation Support
11.1 Community Resource
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
11.2 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
11.3 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
11.4 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
20
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PACKAGE OPTION ADDENDUM
www.ti.com
12-Jul-2022
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
LM7301IM
NRND
SOIC
D
8
95
Non-RoHS
& Green
Call TI
Level-1-235C-UNLIM
-40 to 85
LM73
01IM
LM7301IM/NOPB
ACTIVE
SOIC
D
8
95
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
LM73
01IM
LM7301IM5
NRND
SOT-23
DBV
5
1000
Non-RoHS
& Green
Call TI
Level-1-260C-UNLIM
-40 to 85
A04A
LM7301IM5/NOPB
ACTIVE
SOT-23
DBV
5
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
A04A
LM7301IM5X
NRND
SOT-23
DBV
5
3000
Non-RoHS
& Green
Call TI
Level-1-260C-UNLIM
-40 to 85
A04A
LM7301IM5X/NOPB
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
A04A
Samples
LM7301IMX/NOPB
ACTIVE
SOIC
D
8
2500
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
LM73
01IM
Samples
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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