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LM7332
SNOSAV4B – APRIL 2008 – REVISED JANUARY 2016
LM7332 Dual Rail-to-Rail Input and Output 30-V, Wide Voltage Range, High Output,
Operational Amplifier
1 Features
3 Description
•
The LM7332 device is a dual rail-to-rail input and
output amplifier with a wide operating temperature
range (−40°C to +125°C) that meets the needs of
automotive, industrial, and power supply applications.
The LM7332 has an output current of 100 mA, which
is higher than that of most monolithic operational
amplifiers. Circuit designs with high output current
requirements often require discrete transistors
because many operational amplifiers have low
current output. The LM7332 has enough current
output to drive many loads directly, saving the cost
and space of the discrete transistors.
1
•
•
•
•
•
•
•
•
•
•
VS = ±15 V, TA = 25°C, Typical Values Unless
Specified
Wide Supply Voltage Range 2.5 V to 32 V
Wide Input Common Mode Voltage 0.3 V Beyond
Rails
Output Short Circuit Current > 100 mA
High Output Current (1 V from Rails) ±70 mA
GBWP 21 MHz
Slew Rate 15.2 V/µs
Capacitive Load Tolerance Unlimited
Total Supply Current 2 mA
Temperature Range −40°C to +125°C
Tested at −40°C, +125°C,
and +25°C at 5 V, ±5 V, ±15 V
2 Applications
•
•
•
•
•
•
•
•
MOSFET and Power Transistor Driver
Replaces Discrete Transistors in High Current
Output Circuits
Instrumentation 4–20 mA Current Loops
Analog Data Transmission
Multiple Voltage Power Supplies and Battery
Chargers
High-Side and Low-Side Current Sensing
Bridge and Sensor Driving
Digital-to-Analog Converter Output
The exceptionally wide operating supply voltage
range of 2.5 V to 32 V alleviates any concerns over
functionality under extreme conditions and offers
flexibility of use in a multitude of applications. Most
parameters of this device are insensitive to power
supply variations; this design enhancement is another
step in simplifying usage. Greater than rail-to-rail
input common mode voltage range allows operation
in many applications, including high-side and low-side
sensing, without exceeding the input range.
The LM7332 can drive unlimited capacitive loads
without oscillations.
The LM7332 is offered in the 8-pin VSSOP and SOIC
packages.
Device Information(1)
PART NUMBER
LM7332
PACKAGE
BODY SIZE (NOM)
VSSOP (8)
3.00 mm × 3.00 mm
SOIC (8)
3.91 mm × 4.90 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Output Swing vs Sourcing Current
100
Large Signal Step Response for Various
Capacitive Loads
10
10 pF
VS = 10V, AV = +1, RL = 1 M:
125°C
1
2000 pF
85°C
5V/DIV
VOUT FROM RAIL (V)
VS = 30V
-40°C
0.1
10,000 pF
25°C
0.01
0.1
1
10
100
1000
20,000 pF
ISOURCE (mA)
2 Ps/DIV
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
LM7332
SNOSAV4B – APRIL 2008 – REVISED JANUARY 2016
www.ti.com
Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
6.1
6.2
6.3
6.4
6.5
6.6
6.7
6.8
4
4
4
4
5
6
7
9
Absolute Maximum Ratings .....................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
5-V Electrical Characteristics ...................................
±5-V Electrical Characteristics ................................
±15-V Electrical Characteristics ..............................
Typical Characteristics ..............................................
Detailed Description ............................................ 17
7.1 Overview ................................................................. 17
7.2 Functional Block Diagram ....................................... 17
7.3 Feature Description................................................. 17
7.4 Device Functional Modes........................................ 18
8
Application and Implementation ........................ 20
8.1 Application Information............................................ 20
8.2 Typical Application ................................................. 20
9 Power Supply Recommendations...................... 22
10 Layout................................................................... 23
10.1 Layout Guidelines ................................................. 23
10.2 Layout Example .................................................... 23
10.3 Output Short Circuit Current and Dissipation
Issues....................................................................... 23
11 Device and Documentation Support ................. 26
11.1
11.2
11.3
11.4
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
26
26
26
26
12 Mechanical, Packaging, and Orderable
Information ........................................................... 26
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision A (March 2013) to Revision B
•
Added Device Information, ESD Ratings and Thermal Information table, Feature Description section, Device
Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout
section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section. ..... 1
Changes from Original (March 2013) to Revision A
•
2
Page
Page
Changed layout of National Data Sheet to TI format ........................................................................................................... 20
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LM7332
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SNOSAV4B – APRIL 2008 – REVISED JANUARY 2016
5 Pin Configuration and Functions
DGK Package
8-Pin VSSOP
Top View
IN+ A
V
-
8
A
-
7
+
2
3
B
+
IN- A
1
6
-
OUT A
4
5
+
V
OUT B
IN- B
IN+ B
D Package
8-Pin SOIC
Top View
IN+ A
V
-
8
A
-
7
+
2
3
B
+
IN- A
1
6
-
OUT A
4
5
+
V
OUT B
IN- B
IN+ B
Pin Functions
PIN
I/O
DESCRIPTION
NAME
NO.
IN+ A
3
I
Noninverting Input for Amplifier A
IN– A
2
I
Inverting Input for Amplifier A
IN+ B
5
I
Noninverting Input for Amplifier B
IN– B
6
I
Inverting Input for Amplifier AB
OUT A
1
O
Output for Amplifier A
OUT B
7
O
Output for Amplifier B
+
V
8
P
Positive Supply
V–
4
P
Negative Supply
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LM7332
SNOSAV4B – APRIL 2008 – REVISED JANUARY 2016
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6 Specifications
6.1 Absolute Maximum Ratings
(1) (2)
See
MIN
VIN differential
Output short-circuit duration
See
Junction temperature
V+ + 0.3
(5)
Soldering information
(2)
(3)
(4)
(5)
V
35
V
V− − 0.3
V
150
°C
Infrared or convection (20 sec.)
235
°C
Wave soldering (10 sec.)
260
°C
150
°C
−65
Storage temperature, Tstg
(1)
UNIT
±10
(3) (4)
Supply voltage (VS = V+ – V−)
Voltage at input/output pins
MAX
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
If Military/Aerospace specified devices are required, contact the TI Sales Office/Distributors for availability and specifications.
Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in
exceeding the maximum allowed junction temperature of 150°C.
Short-circuit test is a momentary test. Output short circuit duration is infinite for VS ≤ 6 V at room temperature and below. For VS > 6 V,
allowable short circuit duration is 1.5 ms.
The maximum power dissipation is a function of TJ(MAX), RθJA. The maximum allowable power dissipation at any ambient temperature is
PD = (TJ(MAX) – TA) / RθJA. All numbers apply for packages soldered directly onto a PC board.
6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) (2)
±2000
Machine model (MM)
±200
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
Human Body Model, applicable std. MIL-STD-883, Method 3015.7. Machine Model, applicable std. JESD22-A115-A (ESD MM std. of
JEDEC)Field-Induced Charge-Device Model, applicable std. JESD22-C101-C (ESD FICDM std. of JEDEC).
6.3 Recommended Operating Conditions
MIN
+
−
Supply voltage (VS = V – V )
Temperature range (1)
(1)
MAX
UNIT
2.5
32
V
−40
125
°C
The maximum power dissipation is a function of TJ(MAX), RθJA. The maximum allowable power dissipation at any ambient temperature is
PD = (TJ(MAX) – TA) / RθJA. All numbers apply for packages soldered directly onto a PCB.
6.4 Thermal Information
LM7332
THERMAL METRIC
(1)
(2)
DGK (VSSOP)
D (SOIC)
8 PINS
8 PINS
UNIT
161.1
109.1
°C/W
RθJA
Junction-to-ambient thermal resistance
RθJC(top)
Junction-to-case (top) thermal resistance
55
55.8
°C/W
RθJB
Junction-to-board thermal resistance
80.5
49.2
°C/W
ψJT
Junction-to-top characterization parameter
5.5
10.7
°C/W
ψJB
Junction-to-board characterization parameter
79.2
48.7
°C/W
(1)
(2)
4
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
The maximum power dissipation is a function of TJ(MAX), RθJA. The maximum allowable power dissipation at any ambient temperature is
PD = (TJ(MAX) – TA) / RθJA. All numbers apply for packages soldered directly onto a PCB.
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6.5
SNOSAV4B – APRIL 2008 – REVISED JANUARY 2016
5-V Electrical Characteristics
Unless otherwise specified, all limits are ensured for TA = 25°C, V+ = 5 V, V− = 0 V, VCM = 0.5 V, VO = 2.5 V, and RL > 1 MΩ
to 2.5 V. (1)
PARAMETER
VOS
Input offset voltage
TC VOS
Input offset voltage temperature
drift
IB
Input bias current
IOS
Input offset current
CMRR
Common-mode Rejection Ratio
PSRR
Power supply Rejection Ratio
CMVR
Input common-mode Voltage
Range
AVOL
Large signal Voltage Gain
TEST CONDITIONS
MIN
(2)
VCM = 0.5 V and VCM = 4.5 V
−4
At the temperature extremes
–5
VCM = 0.5 V and VCM = 4.5 V
See
(4)
(5)
±1.6
±1
20
At the temperature extremes
Output short circuit current
IOUT
Output current
2
µA
250
67
At the temperature extremes
65
nA
0 V ≤ VCM ≤ 5 V
62
At the temperature extremes
60
5 V ≤ V+ ≤ 30 V
78
At the temperature extremes
74
CMRR > 50 dB
5.1
−0.3
−0.1
5
5.3
0
0.5 V ≤ VO ≤ 4.5 V
RL = 10 kΩ to 2.5 V
70
77
At the temperature extremes
65
80
dB
70
100
60
At the temperature extremes
dB
V
dB
150
200
RL = 2 kΩ to 2.5 V
VID = 100 mV
100
300
350
5
At the temperature extremes
150
mV from
either rail
200
RL = 2 kΩ to 2.5 V
VID = −100 mV
20
At the temperature extremes
ISC
mV
µV/°C
0 V ≤ VCM ≤ 3 V
At the temperature extremes
UNIT
4
300
RL = 10 kΩ to 2.5 V
VID = −100 mV
Output swing
low
(2)
2.5
At the temperature extremes
VO
MAX
5
−2.5
RL = 10 kΩ to 2.5 V
VID = 100 mV
Output swing
high
(3)
±2
−2
At the temperature extremes
TYP
300
350
Sourcing from V+, VID = 200 mV (6)
60
90
Sinking to V−, VID = –200 mV (6)
60
90
VID = ±200 mV, VO = 1 V from rails
±55
No Load, VCM = 0.5 V
1.5
mA
mA
2.3
IS
Total supply current
SR
Slew rate (7)
AV = +1, VI = 5-V Step, RL = 1 MΩ,
CL = 10 pF
12
V/µs
fu
Unity-gain frequency
RL = 10 MΩ, CL = 20 pF
7.5
MHz
(1)
(2)
(3)
(4)
(5)
(6)
(7)
At the temperature extremes
mA
2.6
Electrical Characteristics values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in
very limited self-heating of the device such that TJ = TA. No ensured specification of parametric performance is indicated in the electrical
tables under conditions of internal self-heating where TJ > TA.
All limits are ensured by testing or statistical analysis.
Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and will also depend on the application and configuration. The typical values are not tested and are not ensured on shipped
production material.
Offset voltage temperature drift determined by dividing the change in VOS at temperature extremes into the total temperature change.
Positive current corresponds to current flowing in the device.
Short-circuit test is a momentary test. Output short circuit duration is infinite for VS ≤ 6 V at room temperature and below. For VS > 6 V,
allowable short circuit duration is 1.5 ms.
Slew rate is the slower of the rising and falling slew rates. Connected as a voltage follower.
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LM7332
SNOSAV4B – APRIL 2008 – REVISED JANUARY 2016
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5-V Electrical Characteristics (continued)
Unless otherwise specified, all limits are ensured for TA = 25°C, V+ = 5 V, V− = 0 V, VCM = 0.5 V, VO = 2.5 V, and RL > 1 MΩ
to 2.5 V.(1)
PARAMETER
TEST CONDITIONS
MIN
(2)
TYP
(3)
MAX
(2)
UNIT
GBWP
Gain bandwidth product
f = 50 kHz
19.3
MHz
en
Input-referred voltage noise
f = 2 kHz
14.8
nV/√HZ
in
Input-referred current noise
f = 2 kHz
1.35
pA/√HZ
THD+N
Total harmonic distortion + noise
AV = +2, RL = 100 kΩ, f = 1 kHz,
VO = 4 VPP
−84
dB
CT Rej.
Crosstalk rejection
f = 3 MHz, Driver RL = 10 kΩ
68
dB
6.6
±5-V Electrical Characteristics
Unless otherwise specified, all limits are ensured for TA = 25°C, V+ = +5 V, V− = −5 V, VCM = 0 V, VO = 0 V, and RL > 1 MΩ to
0 V. (1)
PARAMETER
VOS
Input offset voltage
TC VOS
Input offset voltage temperature
drift
IB
Input bias current
IOS
Input offset current
CMRR
Common-mode rejection ratio
PSRR
Power supply rejection ration
CMVR
Input common-mode voltage
range
AVOL
Large signal voltage gain
(1)
(2)
(3)
(4)
(5)
6
TEST CONDITIONS
MIN
(2)
VCM = −4.5 V and VCM = 4.5 V
−4
At the temperature extremes
−5
VCM = −4.5 V and VCM = 4.5 V
See
(4)
(5)
(3)
±1.6
MAX
(2)
4
5
±2
−2
At the temperature extremes
TYP
±1
−2.5
20
2
250
300
−5 V ≤ VCM ≤ 3 V
74
At the temperature extremes
75
−5 V ≤ VCM ≤ 5 V
70
At the temperature extremes
65
5 V ≤ V+ ≤ 30 V, VCM = −4.5 V
78
At the temperature extremes
74
CMRR > 50 dB
5.1
–5.3
–5.1
5
5.3
–5.1
−4 V ≤ VO ≤ 4 V
RL = 10 kΩ to 0 V
72
80
At the temperature extremes
70
At the temperature extremes
mV
µV/°C
2.5
At the temperature extremes
UNIT
µA
nA
88
dB
74
100
dB
V
dB
Electrical Characteristics values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in
very limited self-heating of the device such that TJ = TA. No ensured specification of parametric performance is indicated in the electrical
tables under conditions of internal self-heating where TJ > TA.
All limits are ensured by testing or statistical analysis.
Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and will also depend on the application and configuration. The typical values are not tested and are not ensured on shipped
production material.
Offset voltage temperature drift determined by dividing the change in VOS at temperature extremes into the total temperature change.
Positive current corresponds to current flowing in the device.
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SNOSAV4B – APRIL 2008 – REVISED JANUARY 2016
±5-V Electrical Characteristics (continued)
Unless otherwise specified, all limits are ensured for TA = 25°C, V+ = +5 V, V− = −5 V, VCM = 0 V, VO = 0 V, and RL > 1 MΩ to
0 V.(1)
PARAMETER
TEST CONDITIONS
MIN
(2)
TYP
RL = 10 kΩ to 0 V
VID = 100 mV
Output swing
high
(3)
75
At the temperature extremes
125
10
At the temperature extremes
350
250
mV from
either rail
300
RL = 2 kΩ to 0V
VID = −100 mV
30
At the temperature extremes
350
400
+
Sourcing from V , VID = 200 mV
(6)
ISC
Output short circuit current
IOUT
Output current
IS
Total supply current
SR
Slew rate (7)
AV = +1, VI = 8-V step, RL = 1 MΩ,
CL = 10 pF
ROUT
Close-loop output resistance
AV = +1, f = 100 kHz
fu
Unity-gain frequency
RL = 10 MΩ, CL = 20 pF
GBWP
Gain bandwidth product
en
in
Sinking to V−, VID = −200 mV
UNIT
250
400
RL = 10 kΩ to 0 V
VID = −100 mV
Output swing
low
(2)
300
RL = 2 kΩ to 0 V
VID = 100 mV
At the temperature extremes
VO
MAX
(6)
90
120
90
100
VID = ±200 mV, VO = 1 V from rails
±65
No Load, VCM = −4.5 V
1.5
At the temperature extremes
mA
mA
2.4
mA
2.6
13.2
V/µs
Ω
3
7.9
MHz
f = 50 kHz
19.9
MHz
Input-referred voltage noise
f = 2 kHz
14.7
nV/√HZ
Input-referred current noise
f = 2 kHz
1.3
pA/√HZ
THD+N
Total harmonic distortion + noise
AV = +2, RL = 100 kΩ, f = 1 kHz
VO = 8 VPP
−87
dB
CT Rej.
Crosstalk rejection
f = 3 MHz, driver RL = 10 kΩ
68
dB
(6)
(7)
6.7
Short-circuit test is a momentary test. Output short circuit duration is infinite for VS ≤ 6 V at room temperature and below. For VS > 6 V,
allowable short circuit duration is 1.5 ms.
Slew rate is the slower of the rising and falling slew rates. Connected as a voltage follower.
±15-V Electrical Characteristics
Unless otherwise specified, all limits are ensured for TA = 25°C, V+ = +15 V, V− = −15 V, VCM = 0 V, VO = 0 V, and RL > 1 MΩ
to 0 V. (1)
PARAMETER
VOS
Input offset voltage
TC VOS
Input offset voltage temperature
drift
IB
Input bias current
(1)
(2)
(3)
(4)
(5)
TEST CONDITIONS
MIN
(2)
VCM = −14.5 V and VCM = 14.5 V
−5
At the temperature extremes
−6
VCM = −14.5 V and VCM = 14.5 V
(5)
−2
At the temperature extremes
(3)
±2
MAX
(2)
−2.5
UNIT
5
mV
6
±2
(4)
See
TYP
±1
µV/°C
2
2.5
µA
Electrical Characteristics values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in
very limited self-heating of the device such that TJ = TA. No ensured specification of parametric performance is indicated in the electrical
tables under conditions of internal self-heating where TJ > TA.
All limits are ensured by testing or statistical analysis.
Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and will also depend on the application and configuration. The typical values are not tested and are not ensured on shipped
production material.
Offset voltage temperature drift determined by dividing the change in VOS at temperature extremes into the total temperature change.
Positive current corresponds to current flowing in the device.
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SNOSAV4B – APRIL 2008 – REVISED JANUARY 2016
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±15-V Electrical Characteristics (continued)
Unless otherwise specified, all limits are ensured for TA = 25°C, V+ = +15 V, V− = −15 V, VCM = 0 V, VO = 0 V, and RL > 1 MΩ
to 0 V.(1)
PARAMETER
IOS
Input offset current
CMRR
Common-mode rejection ratio
PSRR
Power supply rejection ratio
CMVR
Input common-mode voltage
range
AVOL
Large signal voltage gain
TEST CONDITIONS
MIN
TYP
(3)
20
At the temperature extremes
−15 V ≤ VCM ≤ 12 V
74
At the temperature extremes
74
−15 V ≤ VCM ≤ 15 V
72
At the temperature extremes
72
−10 V ≤ V+ ≤ 15 V, VCM = −14.5 V
78
At the temperature extremes
74
250
UNIT
nA
dB
80
100
dB
15.1
−15.3
−15.1
At the temperature extremes
15
15.3
−15
−14 V ≤ VO ≤ 14 V
RL = 10 kΩ to 0 V
72
80
At the temperature extremes
70
CMRR > 50 dB
100
At the temperature extremes
V
dB
350
400
RL = 2 kΩ to 0 V
VID = 100 mV
200
550
600
RL = 10 kΩ to 0 V
VID = −100 mV
Output swing
low
(2)
88
At the temperature extremes
VO
MAX
300
RL = 10 kΩ to 0 V
VID = 100 mV
Output swing
high
(2)
20
At the temperature extremes
450
mV from
either rail
500
RL = 2 kΩ to 0 V
VID = −100 mV
25
At the temperature extremes
550
600
+
Sourcing from V , VID = 200 mV
(6)
140
ISC
Output short circuit current
IOUT
Output current
IS
Total supply current
SR
Slew rate (7)
AV = +1, VI = 20-V Step, RL = 1 MΩ,
CL = 10 pF
fu
Unity-gain frequency
RL = 10 MΩ, CL = 20 pF
GBWP
Gain bandwidth product
f = 50 kHz
en
Input-referred voltage noise
f = 2 kHz
15.5
nV/√HZ
in
Input-referred current noise
f = 2 kHz
1
pA/√HZ
THD+N
Total harmonic distortion plus
noise
AV = +2, RL = 100 kΩ, f = 1 kHz
VO = 25 VPP
CT Rej.
Crosstalk rejection
f = 3 MHz, Driver RL = 10 kΩ
(6)
(7)
8
Sinking to V−, VID = −200 mV
(6)
VID = ±200 mV, VO = 1 V from rails
No Load, VCM = −14.5 V
mA
140
±70
2
At the temperature extremes
mA
2.5
3
mA
15.2
V/µs
9
MHz
21
MHz
−93
dB
68
dB
Short-circuit test is a momentary test. Output short circuit duration is infinite for VS ≤ 6 V at room temperature and below. For VS > 6V,
allowable short circuit duration is 1.5 ms.
Slew rate is the slower of the rising and falling slew rates. Connected as a voltage follower.
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SNOSAV4B – APRIL 2008 – REVISED JANUARY 2016
6.8 Typical Characteristics
Unless otherwise specified, TA = 25°C.
12
0.2
VS = 10V
10
0.1
25°C
0.05
8
VOS (mV)
PERCENTAGE (%)
85°C
0.15
6
4
0
125°C
-0.05
-0.1
-40°C
-0.15
-0.2
2
-0.25
0
-2
-3
-1
0
1
2
VS = 5V
-0.3
-1
3
0
1
2
VOS (mV)
Figure 1. VOS Distribution
4
5
6
Figure 2. VOS vs VCM (Unit 1)
2.5
-1
125°C
125°C
-1.5
85°C
2
25°C
-2.5
VOS (mV)
-2
VOS (mV)
3
VCM (V)
-40°C
-3
1.5
1
25°C
-40°C
85°C
0.5
-3.5
125°C
VS = 5V
-4
-1
0
1
2
3
4
VS = 5V
0
-1
6
5
0
1
2
3
4
5
6
VCM (V)
VCM (V)
Figure 3. VOS vs VCM (Unit 2)
Figure 4. VOS vs VCM (Unit 3)
0
0
85°C
-0.5
-0.1
125°C
125°C
-40°C
-1.5
-40°C
VOS (mV)
VOS (mV)
-1
25°C
-0.2
-0.3
-0.4
-2
-2.5
85°C
-3
-0.5
25°C
-3.5
-0.6
-4
VS = 30V
-0.7
-5
0
5
10
15
20
25
30
35
-4.5
-5
VS = 30V
0
5
10
15
20
25
30
35
VCM (V)
VCM (V)
Figure 5. VOS vs VCM (Unit 1)
Figure 6. VOS vs VCM (Unit 2)
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Typical Characteristics (continued)
Unless otherwise specified, TA = 25°C.
2
-0.6
125°C
85°C
-0.7
1.5
-0.8
1
VOS (mV)
VOS (mV)
-0.9
25°C
-40°C
0.5
-40°C
-1
-1.1
25°C
-1.1
85°C
-1.2
0
-1.3
-0.5
-5
0
125°C
-1.4
VS = 30V
5
10
15
20
25
30
-1.5
35
0
10
20
VCM (V)
Figure 8. VOS vs VS (Unit 1)
1
125°C
0.9
0.9
0.8
85°C
0.7
0.6
VOS (mV)
VOS (mV)
25°C
0.8
85°C
0.7
25°C
0.5
0.4
-40°C
0.6
-40°C
0.5
125°C
0.4
0.3
0.3
0.2
0.2
0.1
0.1
0
0
0
10
20
30
40
0
10
20
VS (V)
1400
40
Figure 10. VOS vs VS (Unit 3)
1300
-40°C
25°C
-
VCM = V + 0.5V
1200
1200
1000
-40°C
85°C
125°C
800
30
VS (V)
Figure 9. VOS vs VS (Unit 2)
600
IBIAS (nA)
IBIAS (nA)
40
VS (V)
Figure 7. VOS vs VCM (Unit 3)
1
30
400
200
25°C
1100
1000
125°C
0
85°C
900
-200
-400
VS = 5V
-600
0
1
800
2
3
4
5
5
10
15
20
25
30
35
40
VS (V)
VCM (V)
Figure 12. IBIAS vs Supply Voltage
Figure 11. IBIAS vs VCM
10
0
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Typical Characteristics (continued)
Unless otherwise specified, TA = 25°C.
3.5
3.5
VS = 5V
VS = 12V
3
3
125°C
2.5
2.5
2
IS (mA)
IS (mA)
125°C
85°C
1.5
2
85°C
1.5
25°C
1
25°C
1
-40°C
0.5
0.5
-40°C
0
0
-1
0
1
2
3
4
5
6
-1
3
1
7
9
11
13
VCM (V)
VCM (V)
Figure 13. IS vs VCM
Figure 14. IS vs VCM
3.6
4
VS = 30V
3.4
3.5
3.2
3
125°C
3
125°C
85°C
2.8
IS (mA)
2.5
IS (mA)
5
2
85°C
1.5
2.6
25°C
2.4
2.2
25°C
-40°C
2
1
-40°C
1.8
0.5
1.6
0
-5
1.4
0
5
10
15
20
25
30
35
-
VCM = V + 0.5V
10
0
20
30
10
VS (V)
VCM (V)
Figure 15. IS vs VCM
Figure 16. IS vs Supply Voltage
2.4
10
VS = 5V
2.2
125°C
85°C
1.8
25°C
1.6
1.4
-40°C
1.2
1
VOUT FROM RAIL (V)
IS (mA)
2
125°C
85°C
0.1
25°C
0.01
-40°C
-
VCM = V + 0.5V
1
0
10
20
30
40
0.001
0.1
VS (V)
Figure 17. IS vs Supply Voltage
1
10
100
1000
ISINK (mA)
Figure 18. Output Swing vs Sinking Current
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Typical Characteristics (continued)
Unless otherwise specified, TA = 25°C.
100
10
VS = 5V
VS = 30V
VOUT FROM RAIL (V)
VOUT FROM RAIL (V)
10
1
125°C
85°C
0.1
25°C
1
125°C
25°C
85°C
-40°C
0.1
0.01
-40°C
0.001
0.1
1
10
100
0.01
0.01
1000
10
1
0.1
ISINK (mA)
Figure 19. Output Swing vs Sinking Current
Figure 20. Output Swing vs Sourcing Current
300
VS = 30V
RL = 2 k:
10
VOUT from RAIL (mV)
VOUT FROM RAIL (V)
250
125°C
1
85°C
-40°C
0.1
0.01
0.1
1
10
125°C
85°C
200
25°C
150
-40°C
100
50
25°C
100
0
1000
0
5
10
Figure 21. Output Swing vs Sourcing Current
100
125°C
25
30
35
RL = 2 k:
90
85°C
125°C
80
120
VOUT from RAIL (mV)
VOUT from RAIL (mV)
20
Figure 22. Positive Output Swing vs Supply Voltage
160
RL = 10 k:
15
VS (V)
ISOURCE (mA)
25°C
100
80
-40°C
60
40
85°C
70
25°C
60
50
-40°C
40
30
20
20
10
0
0
0
5
10
15
20
25
30
35
0
VS (V)
5
10
15
20
25
30
35
VS (V)
Figure 23. Positive Output Swing vs Supply Voltage
12
1000
ISOURCE (mA)
100
140
100
Figure 24. Negative Output Swing vs Supply Voltage
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Typical Characteristics (continued)
Unless otherwise specified, TA = 25°C.
25
140
RL = 10 k:
120
85°C
20
125°C
VOUT from RAIL (mV)
158
VS = 5V
RL = 10 M: 135
100
113
GAIN (dB)
15
25°C
10
80
20 pF
90
GAIN
60
50 pF
68
40
45
PHASE (q)
PHASE
-40°C
20
5
23
200 pF
0
0
100 pF
-20
0
15
20
25
30
1k
35
10k
100k
VS (V)
VS = 10V
RL = 10 M:
120
100
158
140
135
120
113
100
90
80
40
68
45
20
GAIN (dB)
50 pF
GAIN
PHASE (q)
GAIN (dB)
20 pF
60
158
VS = 30V
RL = 10 M: 135
113
PHASE
20 pF
60
50 pF
GAIN
40
23
200 pF
0
0
0
100 pF
-20
10k
100k
1M
10M
-20
-23
100M
1k
10k
100k
FREQUENCY (Hz)
1M
10M
-23
100M
FREQUENCY (Hz)
Figure 27. Open-Loop Frequency Response With
Various Capacitive Loads
Figure 28. Open-Loop Frequency Response With
Various Capacitive Loads
140
140
158
VS = 30V
CL = 20 pF 135
PHASE
120
100 k:
120
60
68
10 k:
1 M:
GAIN
45
10 M:
20
GAIN (dB)
90
PHASE (q)
80
VS = 30V
80
0
0
-20
1k
10k
100k
1M
10M
-23
100M
90
VS = 10V
60
68
GAIN
40
45
20
23
23
100 k: 1 M: 10 M:
135
113
PHASE
113
10 k:
GAIN (dB)
158
RL = 1 M:
CL = 20 pF
100
100
40
68
45
100 pF
1k
90
20
23
200 pF
0
-23
100M
Figure 26. Open-Loop Frequency Response With
Various Capacitive Loads
PHASE
80
10M
FREQUENCY (Hz)
Figure 25. Negative Output Swing vs Supply Voltage
140
1M
PHASE (q)
10
0
PHASE (q)
3
0
0
VS = 5V
-20
1k
10k
100k
1M
10M
-23
100M
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 29. Open-Loop Frequency Response vs
With Various Resistive Loads
Figure 30. Open-Loop Frequency Response vs
With Various Supply Voltages
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Typical Characteristics (continued)
Unless otherwise specified, TA = 25°C.
140
GAIN (dB)
80
90
-40qC
60
125qC 68
GAIN
40
45
125qC
20
RL = 2 k:
23
-40qC
125qC
60
0
PHASE MARGIN (°)
PHASE
RL = 600:
PHASE (q)
120
100
70
158
VS = 30V
RL = 1 M: 135
CL = 20 pF
113
0
-20
1k
10k
100k
1M
10M
50
RL = 10 k:
40
30 RL = 100 k: 10 M:
20
10
VS = 5V
0
20
-23
100M
100
1000
CAPACITIVE LOAD (pF)
FREQUENCY (Hz)
Figure 32. Phase Margin vs Capacitive Load
Figure 31. Open-Loop Frequency Response at Various
Temperatures
70
90
RL = 600:
70
RL = 2 k:
50
60
RL = 10 k:
CMRR (dB)
PHASE MARGIN (°)
VS = 10V
80
60
40
30 RL = 100 k: 10 M:
50
40
30
20
20
10
10
VS = 30V
0
20
100
0
10
1000
10k
100k
CAPACITIVE LOAD (pF)
Figure 33. Phase Margin vs Capacitive Load
Figure 34. CMRR vs Frequency
70
-PSRR (dB)
80
70
60
50
40
60
50
40
30
30
20
20
10
10
10
100
1k
10k
100k
VS = 10V
90
80
0
1M
100
VS = 10V
90
+PSRR (dB)
1k
FREQUENCY (Hz)
100
1M
0
10
100
1k
10k
100k
1M
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 36. −PSRR vs Frequency
Figure 35. +PSRR vs Frequency
14
100
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Typical Characteristics (continued)
Unless otherwise specified, TA = 25°C.
100 mVPP
100 mVPP
VS = 10V, AV = +1, CL = 10 pF, RL = 1 M:
VS = 10V, AV = +1, CL = 500 pF, RL = 1 M:
1 VPP
1 VPP
2 VPP
2 VPP
5 VPP
5 VPP
500 ns/DIV
200 ns/DIV
Figure 37. Step Response for Various Amplitudes
Figure 38. Step Response for Various Amplitudes
100
1000
VS = 5V
VS = 10V, AV = +1, RL = 1 M:
10,000 pF
100
10
CURRENT
VOLTAGE
1
10
1
20,000 pF
1
100
1k
100
100
1000
VOLTAGE
1
1
1
10
100
1k
10k
0.1
100k
VOLTAGE NOISE (nV/ Hz)
10
CURRENT NOISE (pA/ Hz)
VOLTAGE NOISE (nV/ Hz)
VS = 30V
CURRENT
10
0.1
100k
Figure 40. Input-Referred Noise Density vs Frequency
VS = 10V
100
10k
FREQUENCY (Hz)
2 Ps/DIV
Figure 39. Large Signal Step Response for Various
Capacitive Loads
1000
10
10
100
CURRENT
VOLTAGE
1
10
1
1
FREQUENCY (Hz)
10
100
1k
10k
CURRENT NOISE (pA/ Hz)
5V/DIV
2000 pF
CURRENT NOISE (pA/ Hz)
VOLTAGE NOISE (nV/ Hz)
10 pF
0.1
100k
FREQUENCY (Hz)
Figure 41. Input-Referred Noise Density vs Frequency
Figure 42. Input-Referred Noise Density vs Frequency
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Typical Characteristics (continued)
Unless otherwise specified, TA = 25°C.
0
0
VS = 5V
-10 f = 1 kHz
VS = 10V
-10 f = 1 kHz
THD+N (dB)
THD+N (dB)
-20 AV = +2
R = 100 k:
-30 L
-40
-50
-60
-20
AV = +2
-30
RL = 100 k:
-40
-50
-60
-70
-70
-80
-80
-90
-90
-100
0.02
0.1
1
-100
0.02
6
OUTPUT AMPLITUDE (VPP)
Figure 43. THD+N vs Output Amplitude (VPP)
130
VS = 30V
-10 f = 1 kHz
CROSSTALK REJECTION (dB)
THD+N (dB)
10 20
VS = 5V
120
-20 AV = +2
RL = 100 k:
-30
-40
-50
-60
-70
-80
-90
RL = 10 k:
110
100
90
80
70
60
50
40
30
0.1
1
10
40
20
1k
10k
100k
1M
10M
100M
FREQUENCY (Hz)
OUTPUT AMPLITUDE (VPP)
Figure 45. THD+N vs Output Amplitude (VPP)
16
1
Figure 44. THD+N vs Output Amplitude (VPP)
0
-100
0.02
0.1
OUTPUT AMPLITUDE (VPP)
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Figure 46. Crosstalk vs Frequency
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7 Detailed Description
7.1 Overview
The LM7332 device is a rail-to-rail input and output amplifier with wide operating voltages and high-output
currents. The LM7322 is efficient, achieving 15.2-V/µs slew rate and 21-MHz unity gain bandwidth while requiring
only 2 mA of total supply current. The LM7332 device performance is fully specified for operation at 5 V, ±5 V
and ±15 V.
The LM7332 device is designed to drive unlimited capacitive loads without oscillations. The LM7332 is fully
tested at −40°C, 125°C, and 25°C, with modern automatic test equipment. High performance from −40°C to
+125°C, detailed specifications, and extensive testing makes them suitable for industrial, automotive, and
communications applications.
Most device parameters are insensitive to power supply voltage, and this makes the parts easier to use where
supply voltage may vary, such as automotive electrical systems and battery-powered equipment. The LM7332
has a true rail-to-rail output and can supply a respectable amount of current (±70 mA) with minimal head room
from either rail (1 V).
7.2 Functional Block Diagram
V
-
A
2
3
7
B
+
IN+ A
8
+
IN- A
1
6
-
OUT A
4
5
+
V
OUT B
IN- B
IN+ B
7.3 Feature Description
7.3.1 Estimating the Output Voltage Swing
It is important to keep in mind that the steady-state output current will be less than the current available when
there is an input overdrive present. For steady-state conditions, Figure 47 and Figure 48 plots can be used to
predict the output swing. These plots also show several load lines corresponding to loads tied between the
output and ground. In each case, the intersection of the device plot at the appropriate temperature with the load
line would be the typical output swing possible for that load. For example, a 600-Ω load can accommodate an
output swing to within 100 mV of V− and to 250 mV of V+ (VS = ±5 V) corresponding to a typical 9.65-VPP
unclipped swing.
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Feature Description (continued)
10
10
20:
50:
2 k:
1
VOUT FROM V (V)
1 k:
1
1 k:
600:
-
+
VOUT FROM V (V)
2 k:
600:
200:
100m
100:
100m
10m
200:
VS = 10V
VS = 10V
VID = 20 mV
10m
10µ
100µ
100: 50:
VID = -20 mV
20:
1m
10m
1m
10µ
100m
100µ
1m
10m
100m
IOUT (A)
IOUT (A)
Figure 48. Steady-State Output Sinking Characteristics
With Load Lines
Figure 47. Steady-State Output Sourcing Characteristics
With Load Lines
7.4 Device Functional Modes
7.4.1 Driving Capacitive Loads
The LM7332 is specifically designed to drive unlimited capacitive loads without oscillations as shown in
Figure 49.
100
100µ
VS = 10V
AV = +1
10µ
10
1µ
1
SLEW RATE (V/µS)
±1% SETTLING TIME (S)
SETTLING TIME
100 mVPP STEP
SLEW RATE
100n
10p
100p
1n
10n
100n
1µ
0.1
10µ
CL (pF)
Figure 49. Settling Time and Slew Rate vs Capacitive Load
In addition, the output current handling capability of the device allows for good slewing characteristics even with
large capacitive loads as shown in Figure 49. The combination of these features is ideal for applications such as
TFT flat panel buffers, A/D converter input amplifiers and power transistor driver.
However, as in most operational amplifiers, addition of a series isolation resistor between the operational
amplifier and the capacitive load improves the settling and overshoot performance.
Output current drive is an important parameter when driving capacitive loads. This parameter will determine how
fast the output voltage can change. Referring to Figure 49, two distinct regions can be identified. Below about
10,000 pF, the output slew rate is solely determined by the compensation capacitor value of the operational
amplifier and available current into that capacitor. Beyond 10 nF, the slew rate is determined by the available
output current of the operational amplifier. An estimate of positive and negative slew rates for loads larger than
100 nF can be made by dividing the short circuit current value by the capacitor.
18
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Device Functional Modes (continued)
7.4.2 Output Voltage Swing Close to V−
The output stage design of the LM7332 allows voltage swings to within millivolts of either supply rail for
maximum flexibility and improved useful range. Because of this design architecture, with output approaching
either supply rail, the output transistor collector-base junction reverse bias decreases. With output less than a Vbe
from either rail, the corresponding output transistor operates near saturation. In this mode of operation, the
transistor exhibits higher junction capacitance and lower ft which reduces phase margin. With the Noise Gain
(NG = 1 + RF/RG, RF and RG are external gain setting resistors) of 2 or higher, there is sufficient phase margin
that this reduction in phase margin is of no consequence. However, with lower Noise Gain (
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