LM833-N
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SNOSBD8E – MAY 2004 – REVISED MAY 2012
LM833-N Dual Audio Operational Amplifier
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FEATURES
DESCRIPTION
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The LM833-N is a dual general purpose operational
amplifier designed with particular emphasis on
performance in audio systems.
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Wide Dynamic Range: >140dB
Low Input Noise Voltage: 4.5nV/√Hz
High Slew Rate: 7 V/μs (typ); 5V/μs (Min)
High Gain Bandwidth: 15MHz (typ); 10MHz
(Min)
Wide Power Bandwidth: 120KHz
Low Distortion: 0.002%
Low Offset Voltage: 0.3mV
Large Phase Margin: 60°
Available in 8 Pin VSSOP Package
This dual amplifier IC utilizes new circuit and
processing techniques to deliver low noise, high
speed and wide bandwidth without increasing
external components or decreasing stability. The
LM833-N is internally compensated for all closed loop
gains and is therefore optimized for all preamp and
high level stages in PCM and HiFi systems.
The LM833-N is pin-for-pin compatible with industry
standard dual operational amplifiers.
Schematic Diagram
(1/2 LM833-N)
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2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2004–2012, Texas Instruments Incorporated
LM833-N
SNOSBD8E – MAY 2004 – REVISED MAY 2012
www.ti.com
Connection Diagram
Figure 1. See Package Number D0008A, P0008E or DGK0008A
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ABSOLUTE MAXIMUM RATINGS (1) (2)
Supply Voltage VCC–VEE
Differential Input Voltage
36V
(3)
VI
±30V
Input Voltage Range (3) VIC
±15V
Power Dissipation (4) PD
500 mW
−40 ∼ 85°C
Operating Temperature Range TOPR
−60 ∼ 150°C
Storage Temperature Range TSTG
Soldering Information
PDIP Package
Soldering (10 seconds)
260°C
Small Outline Package (SOIC and VSSOP)
Vapor Phase (60 seconds)
215°C
Infrared (15 seconds)
ESD tolerance
(1)
(2)
(3)
(4)
(5)
2
(5)
220°C
1600V
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is functional, but do not ensure specific performance limits. Electrical Characteristics state DC and AC electrical
specifications under particular test conditions which ensure specific performance limits. This assumes that the device is within the
Operating Ratings. Specifications are not ensured for parameters where no limit is given, however, the typical value is a good indication
of device performance.
If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and
specifications.
If supply voltage is less than ±15V, it is equal to supply voltage.
This is the permissible value at TA ≤ 85°C.
Human body model, 1.5 kΩ in series with 100 pF.
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SNOSBD8E – MAY 2004 – REVISED MAY 2012
DC ELECTRICAL CHARACTERISTICS (1) (2)
(TA = 25°C, VS = ±15V)
Symbol
Parameter
Conditions
Min
Typ
Units
VOS
Input Offset Voltage
0.3
5
mV
IOS
Input Offset Current
10
200
nA
IB
Input Bias Current
500
1000
nA
AV
Voltage Gain
VOM
Output Voltage Swing
VCM
Input Common-Mode Range
CMRR
Common-Mode Rejection Ratio
PSRR
Power Supply Rejection Ratio
IQ
Supply Current
VO = 0V, Both Amps
(1)
RS = 10Ω
Max
RL = 2 kΩ, VO = ±10V
90
110
dB
RL = 10 kΩ
±12
±13.5
V
RL = 2 kΩ
±12
±13.4
V
±12
±14.0
V
VIN = ±12V
80
100
dB
VS = 15 ∼ 5V, −15 ∼ −5V
80
100
dB
5
8
mA
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is functional, but do not ensure specific performance limits. Electrical Characteristics state DC and AC electrical
specifications under particular test conditions which ensure specific performance limits. This assumes that the device is within the
Operating Ratings. Specifications are not ensured for parameters where no limit is given, however, the typical value is a good indication
of device performance.
All voltages are measured with respect to the ground pin, unless otherwise specified.
(2)
AC ELECTRICAL CHARACTERISTICS
(TA = 25°C, VS = ±15V, RL = 2 kΩ)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
SR
Slew Rate
RL = 2 kΩ
5
7
V/μs
GBW
Gain Bandwidth Product
f = 100 kHz
10
15
MHz
VNI
Equivalent Input Noise Voltage
(LM833AM, LM833AMX)
RIAA, RS = 2.2 kΩ (1)
(1)
μV
1.4
RIAA Noise Voltage Measurement Circuit
DESIGN ELECTRICAL CHARACTERISTICS
(TA = 25°C, VS = ±15V)
The following parameters are not tested or ensured.
Symbol
ΔVOS/ΔT
Parameter
Conditions
Average Temperature Coefficient
Typ
Units
2
μV/°C
0.002
%
of Input Offset Voltage
THD
Distortion
RL = 2 kΩ, f = 20∼20 kHz
VOUT = 3 Vrms, AV = 1
en
Input Referred Noise Voltage
RS = 100Ω, f = 1 kHz
4.5
nV / √Hz
in
Input Referred Noise Current
f = 1 kHz
0.7
pA / √Hz
PBW
Power Bandwidth
VO = 27 Vpp, RL = 2 kΩ, THD ≤ 1%
120
kHz
fU
Unity Gain Frequency
Open Loop
9
MHz
φM
Phase Margin
Open Loop
60
deg
Input Referred Cross Talk
f = 20∼20 kHz
−120
dB
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TYPICAL PERFORMANCE CHARACTERISTICS
Maximum Power
Dissipation
vs Ambient Temperature
Input Bias Current vs
Ambient Temperature
Figure 2.
Figure 3.
Input Bias Current vs
Supply Voltage
4
Supply Current vs
Supply Voltage
Figure 4.
Figure 5.
DC Voltage Gain
vs Ambient Temperature
DC Voltage Gain
vs Supply Voltage
Figure 6.
Figure 7.
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SNOSBD8E – MAY 2004 – REVISED MAY 2012
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Voltage Gain & Phase
vs Frequency
Gain Bandwidth Product
vs Ambient Temperature
Figure 8.
Figure 9.
Gain Bandwidth
vs Supply Voltage
Slew Rate vs
Ambient Temperature
Figure 10.
Figure 11.
Slew Rate vs
Supply Voltage
Power Bandwidth
Figure 12.
Figure 13.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
6
CMR vs Frequency
Distortion vs Frequency
Figure 14.
Figure 15.
PSRR vs Frequency
Maximum
Output Voltage vs
Supply Voltage
Figure 16.
Figure 17.
Maximum
Output Voltage vs
Ambient Temperature
Spot Noise Voltage
vs Frequency
Figure 18.
Figure 19.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Spot Noise Current
vs Frequency
Input Referred Noise Voltage
vs Source Resistance
Figure 20.
Figure 21.
Noninverting Amp
Noninverting Amp
Figure 22.
Figure 23.
Inverting Amp
Figure 24.
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SNOSBD8E – MAY 2004 – REVISED MAY 2012
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APPLICATION HINTS
The LM833-N is a high speed op amp with excellent phase margin and stability. Capacitive loads up to 50 pF will
cause little change in the phase characteristics of the amplifiers and are therefore allowable.
Capacitive loads greater than 50 pF must be isolated from the output. The most straightforward way to do this is
to put a resistor in series with the output. This resistor will also prevent excess power dissipation if the output is
accidentally shorted.
Noise Measurement Circuit
Complete shielding is required to prevent induced pick up from external sources. Always check with oscilloscope for
power line noise.
Figure 25. Total Gain: 115 dB @f = 1 kHz
Input Referred Noise Voltage: en = V0/560,000 (V)
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SNOSBD8E – MAY 2004 – REVISED MAY 2012
RIAA Noise Voltage Measurement Circuit
RIAA Preamp Voltage Gain, RIAA
Deviation vs Frequency
Figure 26.
Flat Amp Voltage Gain vs
Frequency
Figure 27.
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SNOSBD8E – MAY 2004 – REVISED MAY 2012
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Typical Applications
AV = 34.5
F = 1 kHz
En = 0.38 μV
A Weighted
Figure 28. NAB Preamp
Figure 29. NAB Preamp Voltage Gain vs Frequency
VO = V1–V2
Figure 30. Balanced to Single Ended Converter
10
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SNOSBD8E – MAY 2004 – REVISED MAY 2012
VO = V1 + V2 − V3 − V4
Figure 31. Adder/Subtracter
Figure 32. Sine Wave Oscillator
Illustration is f0 = 1 kHz
Figure 33. Second Order High Pass Filter (Butterworth)
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Illustration is f0 = 1 kHz
Figure 34. Second Order Low Pass Filter (Butterworth)
Illustration is f0 = 1 kHz, Q = 10, ABP = 1
Figure 35. State Variable Filter
Figure 36. AC/DC Converter
12
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SNOSBD8E – MAY 2004 – REVISED MAY 2012
Figure 37. 2 Channel Panning Circuit (Pan Pot)
Figure 38. Line Driver
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SNOSBD8E – MAY 2004 – REVISED MAY 2012
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Illustration is:
fL = 32 Hz, fLB = 320 Hz
fH =11 kHz, fHB = 1.1 kHz
Figure 39. Tone Control
Av = 35 dB
En = 0.33 μV
S/N = 90 dB
f = 1 kHz
A Weighted
A Weighted, VIN = 10 mV
@f = 1 kHz
Figure 40. RIAA Preamp
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SNOSBD8E – MAY 2004 – REVISED MAY 2012
Illustration is:
V0 = 101(V2 − V1)
Figure 41. Balanced Input Mic Amp
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SNOSBD8E – MAY 2004 – REVISED MAY 2012
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Figure 42. 10 Band Graphic Equalizer
fo (Hz)
C1
C2
R1
R2
32
0.12μF
4.7μF
75kΩ
500Ω
64
0.056μF
3.3μF
68kΩ
510Ω
125
0.033μF
1.5μF
62kΩ
510Ω
250
0.015μF
0.82μF
68kΩ
470Ω
500
8200pF
0.39μF
62kΩ
470Ω
1k
3900pF
0.22μF
68kΩ
470Ω
2k
2000pF
0.1μF
68kΩ
470Ω
4k
1100pF
0.056μF
62kΩ
470Ω
8k
510pF
0.022μF
68kΩ
510Ω
16k
330pF
0.012μF
51kΩ
510Ω
Note: At volume of change = ±12
dB Q = 1.
LM833-N MDC MWC DUAL AUDIO OPERATIONAL AMPLIFIER
Figure 43. Die Layout (A - Step)
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PACKAGE OPTION ADDENDUM
www.ti.com
19-Aug-2022
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
LM833M
ACTIVE
SOIC
D
8
95
Non-RoHS
& Green
Call TI
Level-1-235C-UNLIM
-40 to 85
LM833
M
Samples
LM833M/NOPB
ACTIVE
SOIC
D
8
95
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
LM833
M
Samples
LM833MM/NOPB
ACTIVE
VSSOP
DGK
8
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
Z83
Samples
LM833MMX/NOPB
ACTIVE
VSSOP
DGK
8
3500
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
Z83
Samples
LM833MX/NOPB
ACTIVE
SOIC
D
8
2500
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
LM833
M
Samples
LM833N/NOPB
ACTIVE
PDIP
P
8
40
RoHS & Green
NIPDAU
Level-1-NA-UNLIM
-40 to 85
LM
833N
Samples
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of