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LM8365
SNVS233C – MARCH 2003 – REVISED DECEMBER 2015
LM8365 Micropower Undervoltage-Sensing Circuit With Programmable Output Delay
1 Features
•
1
•
•
•
•
•
3 Description
Extremely-Low Quiescent Current: 0.62 μA at VIN
= 2.6 V
High Accuracy Threshold Voltage (±2.5%)
Open-Drain Output
Programmable Output Delay by External
Capacitor (130 ms Typical With 0.1 μF)
Input Voltage Range: 1 V to 6 V
Pin-for-Pin Compatible With MC33465
2 Applications
•
•
•
•
•
Portable Electronics
Low-Battery Detection
Microprocessor Reset Controllers
Power Fail Indicators
Battery Backup Detection
The LM8365 device is a micropower undervoltage
sensing circuit that is ideal for use in battery-powered
microprocessor based systems, where extended
battery life is a key requirement.
Threshold voltages of 2.7 V and 4.5 V are available
with an active-low, open-drain output. These devices
feature a very-low quiescent current of 0.65 µA
typical. The LM8365 features a highly accurate
voltage reference, a comparator with precise
thresholds and built-in hysteresis to prevent erratic
reset operation, a time delayed output which can be
programmed by the system designer, and specified
Reset operation down to 1 V with extremely-low
standby current.
Device Information(1)
PART NUMBER
PACKAGE
LM8365
SOT-23 (5)
BODY SIZE (NOM)
2.90 mm × 1.60 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Microprocessor Reset Circuit
VIN
INPUT
* 470k:
VCC
PP
CD
RESET
RESET
CD
GND
GND
* REQUIRED FOR OPEN DRAIN OUTPUT
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
LM8365
SNVS233C – MARCH 2003 – REVISED DECEMBER 2015
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Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
6.1
6.2
6.3
6.4
6.5
6.6
4
4
4
4
5
7
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Typical Characteristics ..............................................
Detailed Description .............................................. 9
7.1
7.2
7.3
7.4
Overview ................................................................... 9
Functional Block Diagram ......................................... 9
Feature Description................................................... 9
Device Functional Modes........................................ 10
8
Application and Implementation ........................ 11
8.1 Application Information............................................ 11
8.2 Typical Application .................................................. 11
8.3 System Examples ................................................... 12
9 Power Supply Recommendations...................... 14
10 Layout................................................................... 14
10.1 Layout Guidelines ................................................. 14
10.2 Layout Example .................................................... 14
11 Device and Documentation Support ................. 15
11.1
11.2
11.3
11.4
11.5
11.6
Device Support......................................................
Documentation Support ........................................
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
15
15
15
15
15
15
12 Mechanical, Packaging, and Orderable
Information ........................................................... 16
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision B (April 2013) to Revision C
Page
•
Added, updated, or revised the following sections in accordance with new datasheet standards: Description, Pin
Configuration and Functions, Specifications, , Detailed Description, Application and Implementation, Power Supply
Recommendations, Layout, Device and Documentation Support, Mechanical, Packaging, and Ordering Information. ....... 1
•
Removed all references of the 22 Suffix and 30 Suffix from the Electrical Characteristics table .......................................... 5
•
Removed all references of the LM8365BCLMF30 in the Typical Characteristics section .................................................... 7
Changes from Revision A (April 2013) to Revision B
•
2
Page
Changed layout of National Data Sheet to TI format ........................................................................................................... 11
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5 Pin Configuration and Functions
DBV Package
5-Pin SOT-23
Top View
RESET
INPUT
GND
1
5
CD
2
4
3
N/C
Pin Functions
PIN
NAME
NO.
I/O
DESCRIPTION
CD
5
O
Delay Capacitor Pin
GND
3
—
Ground
INPUT
2
I
N/C
4
—
No Connection
RESET
1
O
Active Low Reset Output
Input Supply
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6 Specifications
6.1 Absolute Maximum Ratings
(1) (2)
See
.
MIN
MAX
UNIT
Supply voltage
−0.3
6.5
V
RESET output voltage
−0.3
6.5
RESET output current
70
Lead temp. (soldering 10 sec)
Mounting temperature
Junction temperature
−65
Storage temperature, Tstg
(1)
(2)
V
mA
260
°C
125
°C
150
°C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and
specifications.
6.2 ESD Ratings
VALUE
Electrostatic
discharge
V(ESD)
(1)
(2)
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
±2000
Charged-device model (CDM), per JEDEC specification JESD22-C101 (2)
±200
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Manufacturing with
less than 500-V HBM is possible with the necessary precautions. Pins listed as ±2000 V may actually have higher performance.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Manufacturing with
less than 250-V CDM is possible with the necessary precautions. Pins listed as ±200 V may actually have higher performance.
6.3 Recommended Operating Conditions (1)
Temperature
(1)
MIN
MAX
−40
85
UNIT
°C
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Recommended Operating Conditions indicate
conditions for which the device is intended to be functional, but specific performance is not ensured. For ensured specifications and the
test conditions, see the Electrical Characteristics.
6.4 Thermal Information
LM8365
THERMAL METRIC (1)
DBV (SOT-23)
UNIT
5 PINS
RθJA
Junction-to-ambient thermal resistance
191.1
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
144.6
°C/W
RθJB
Junction-to-board thermal resistance
35.9
°C/W
ψJT
Junction-to-top characterization parameter
31.1
°C/W
ψJB
Junction-to-board characterization parameter
35.3
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
—
°C/W
(1)
4
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
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6.5 Electrical Characteristics
Unless otherwise specified, all limits specified for TA = 25°C.
PARAMETER
TEST CONDITIONS
MIN (1)
TYP (2)
MAX (1)
27 suffix
2.633
2.7
2.767
45 suffix
4.388
4.5
4.613
27 suffix
0.081
0.135
0.189
45 suffix
0.135
0.225
0.315
UNIT
VDET−
Detector threshold voltage
High-to-low state output
(VIN decreasing)
VHYS
Detector threshold hysteresis
VIN increasing
ΔVdet/ΔT
Detector threshold voltage
temperature coefficient
VOL
RESET output voltage
Open-drain
ISINK = 1 mA
IOL
RESET output sink current
VIN = 1.5 V, VOL = 0.5 V
1
2.5
mA
IOH
RESET output source current
VIN = 4.5 V, VOL = 2.4 V
1
7
mA
ICD
Delay pin output sink current
VIN = 1.5 V, VCD = 0.5 V
0.2
1.8
mA
RD
Delay resistance
0.5
1
VIN
Operating input voltage range
±100
1
27 suffix
IIN
Quiescent input current
45 suffix
(1)
(2)
0.25
V
PPM/°C
0.5
V
2
MΩ
6
V
VIN = 2.6 V
0.62
0.9
VIN = 4.7 V
0.75
1.3
VIN = 4.34 V
0.7
1
0.85
1.4
VIN = 6 V
V
μA
All limits are specified by testing or statistical analysis.
Typical values represent the most likely parametric norm.
INPUT VOLTAGE, PIN 2
VIN
VDET+
VDET-
VIN
CAPACITOR, PIN 5
0.675 VIN
VIN
RESET OUTPUT (ACTIVE
LOW), PIN 1
VDET0V
tD2
Figure 1. Timing Waveforms
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CMOS OUTPUT
OPEN DRAIN OUTPUT
VDET+ +2.0V
VDET+ +2.0V
1V
1V
GND
GND
VDET+ +2.0V
5.0V
INPUT VOLTAGE,
PIN 2
RESET OUTPUT
VOLTAGE, PIN 1
VDET+ +2.0V
2.5V
50%
2
GND
GND
tD1
tD1
tD2
tD2
Figure 2. Propagation Delay Timing Diagrams
6
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6.6 Typical Characteristics
1.2
6
RL = 470k: TO 5V
RL = 470k: TO VIN
5
RESET OUTPUT VOLTAGE (V)
INPUT CURRENT (PA)
1.0
80°C
0.8
25°C
0.6
0.4
-30°C
4
3
2
-30°C
0.2
1
25°C
80°C
0.0
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
INPUT VOLTAGE (V)
INPUT VOLTAGE (V)
Figure 3. Input Current vs Input Voltage LM8365BALMF45
Figure 4. Reset Output Voltage vs Input Voltage
LM8365BALMF45
10
16
VOL = 0.5V
RL = 470k: TO 5V
RL = 470k: TO VIN
OUTPUT SINK CURRENT (mA)
OUTPUT SINK CURRENT (mA)
9
8
7
-30°C
6
25°C
5
4
3
80°C
2
1
0
14
VIN = 2.5V
12
10
8
VIN = 2.0V
6
4
VIN = 1.5V
2
0
0
0.5
1
1.5
2
2.5
3
3.5
0
0.5
1
1.5
2
2.5
3
3.5
INPUT VOLTAGE (V)
OUTPUT VOLTAGE (V)
Figure 5. Reset Output Sink Current vs Input Voltage
LM8365BALMF27
Figure 6. Reset Output Sink Current vs Reset Output
Voltage LM8365BALMF45
12
7
VCD = 0.5V
CD SINK CURRENT (mA)
-30°C
10
CD SINK CURRENT (mA)
RL = 470k: TO 5V
6
5
25°C
4
3
2
80°C
VIN = 2.5V
8
6
VIN = 2.0V
4
VIN = 1.5V
2
1
0
0
0
0.5
1
1.5
2
2.5
0
3
0.5
1
1.5
2
2.5
3
CD VOLTAGE, VCD (V)
INPUT VOLTAGE (V)
Figure 7. CD Sink Current vs Input Voltage LM8365BALMF27
Figure 8. CD Sink Current vs CD Voltage
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Typical Characteristics (continued)
DETECTOR THRESHOLD VOLTAGE (V)
CD DELAY IN THRESHOLD (V)
2.3
VIN = 2.97V
2.2
2.1
2.0
1.9
1.8
-50
-25
0
25
50
75
100
VDET+
4.8
4.7
VHYS
4.6
VDET-
4.5
4.4
4.3
-50
-25
0
25
50
75
100
AMBIENT TEMPERATURE (°C)
AMBIENT TEMPERATURE (°C)
Figure 9. CD Delay Pin Threshold Voltage vs Temperature
LM8365BALMF27
Figure 10. Detector Threshold Voltage vs Temperature
LM8365BALMF45
10000
1.6
1000
1.4
OUTPUT TIME DELAY
RD, DELAY RESISTANCE (M:)
1.8
1.2
1.0
0.8
0.6
0.4
VIN DECREASING (Ps)
100
10
VIN INCREASING (ms)
1
0.2
0.0
-50
-25
0
25
50
75
0.1
0.0001
100
0.001
0.01
0.1
1
CD, DELAY PIN CAPACITANCE (PF)
AMBIENT TEMPERATURE (°C)
Figure 11. Delay Resistance vs Temperature
8
4.9
Figure 12. Output Time Delay vs Capacitance
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7 Detailed Description
7.1 Overview
The LM8365 ultra-low current voltage detector was designed to monitor voltages and to provide an indication
when the monitored voltage, VIN, dropped below a precisely trimmed threshold voltage. The voltage detector of
the LM8365 drives a time delay generator that may be programmed for fixed lengths of time depending on the
application needs. This characteristic is displayed in the typical operating timing diagram in Figure 1.
7.2 Functional Block Diagram
INPUT
RD
RESET
+
VREF
GND
CD
Figure 13. Open-Drain Output
7.3 Feature Description
VIN is the voltage that is being monitored and as it decreases passed the precisely trimmed threshold VDET−, the
Active Low RESET output drops to a Logic Low state and the CD pin drops to 0 V. During this state the external
capacitor connected to the CD pin is immediately discharged by an internal N-Channel MOSFET. When VIN
increases above the threshold VDET+ (VDET− + VHYS) the capacitor connected to the CD pin starts to charge up to
VIN through an internal pullup resistor RD. Once the capacitor has charged up past the internal Delay Pin
Threshold, which is typically 0.675 VIN, the RESET output will revert back to it's original state. The LM8365 have
built-in hysteresis to help prevent erratic reset operation when the input voltage crosses the threshold.
The LM8365 has a wide variety of applications that can take advantage of its precision and low current
consumption to monitor Input voltages even though it was designed as a reset controller in portable
microprocessor based systems. It is a very cost-effective and space-saving device that will protect your more
expensive investments of microprocessors and other devices that need a specified supply voltage and time delay
for proper operation.
The propagation delay time for the LM8365 is measured using a 470-kΩ pullup resistor connected to from the
RESET output pin to 5 V in addition to a 10-pF capacitive load connected from the same pin to GND. Figure 2
shows the timing diagram for the measurement for the propagation delay. VDET+ is equal to the sum of the
detector threshold, VDET−, and the built in hysteresis, VHYS. tD1 is the propagation time from High-to-Low and tD2 is
the propagation from Low-to-High.
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7.4 Device Functional Modes
7.4.1 Reset Output Low
When VIN decreases below the precisely trimmed threshold VDET−, the CD pin voltage will drop to 0 V and the
Reset pin will output low.
7.4.2 Reset Output High
When VIN increases above the precisely trimmed threshold VDET+ (VDET− + VHYS), the capacitor connected to the
CD pin starts to charge up to VIN through an internal pull-up resistor RD. Once the capacitor has charged up past
the internal Delay Pin Threshold, which is typically 0.675 VIN, the RESET output will be pulled high, assuming an
external pullup resistor is connected from Reset to VIN.
10
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8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The LM8365 is a supervisor that is ideal for use in battery powered microprocessor based systems. With an
external delay capacitor, CD, a time delay can be accurately programmed to allow for use in many types of
applications. The LM8365 can ensure system reliability and ensures that a connected microprocessor will
operate only when a minimum VIN supply is satisfied.
8.2 Typical Application
The LM8365 can be used as a simple supervisor circuit to monitor the input supply to a microprocessor as
shown in Figure 14.
VIN
INPUT
VCC
* 470k:
PP
CD
RESET
RESET
CD
GND
GND
* REQUIRED FOR OPEN DRAIN OUTPUT
Figure 14. Microprocessor Reset Circuit
8.2.1 Design Requirements
For this design example, use the parameters listed in Table 1 as the input parameters.
Table 1. Design Parameters
DESIGN PARAMETER
EXAMPLE VALUE
Input Supply voltage range
1 V to 6 V
Reset Output voltage, high
Input Supply
Reset Output voltage, low
0V
Output Time delay, CD = 0.1 μF
130 ms
Output Time delay, CD = 1 μF
1.2 s
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8.2.2 Detailed Design Procedure
The Bill of Materials shown in Table 2 reflects the components used on the LM8365EVM. A layout of the EVM
can be seen in Figure 19.
Table 2. Bill of Materials
DESIGNATOR
DESCRIPTION
PART NUMBER
QUANTITY
MANUFACTURER
U1
R1
LM8365, 2.7V Threshold
LM8365
1
Texas Instruments
470K Resistor, 0603
CRCW0603470KJNEA
1
Vishay
C1
0.01μF Capacitor, 0603
GRM188R71C103KA01D
1
MuRata
C2
0.1μF Capacitor, 0805
GRM219R71C104KA01D
1
MuRata
C3
1μF Capacitor, 0805
C0805C105K4RACTU
1
Kemet
C4
Input Capacitor
–
0
–
8.2.3 Application Curves
Two capacitor values for CD (0.1 μF and 1 μF) are used as examples to show the programmability of the output
time delay as shown in Figure 15 and Figure 16.
Figure 15. 0.1-μF Capacitor Programmed Delay
Figure 16. 1-μF Capacitor Programmed Delay
8.3 System Examples
The LM8365 can be used as a missing pulse detector. As shown in Figure 17, if a high-to-low transition pulse
were to be missing, the CD voltage would continue to increase until it reaches its threshold of 0.675 × VIN,
causing the Reset pin to output high and signal a missing pulse.
12
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System Examples (continued)
VSUPPLY
5.0V
1.0V
0V
2
470k:
INPUT
1
5
TO ADDITIONAL CIRCUITRY
CD
RESET OUTPUT
0.001PF
CD
3
MISSING PULSE
GND
INPUT
0V
VIN
|0.675*VIN
CD
RESET OUTPUT
tD2
Figure 17. Missing Pulse Detector Using LM8365BALMF45
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9 Power Supply Recommendations
The input of the LM8365 is designed to handle up to the supply voltage absolute maximum rating of 6.5 V. If the
input supply is susceptible to any large transients above the maximum rating, then extra precautions should be
taken. An input capacitor is recommended to avoid false Reset output triggers due to noise.
10 Layout
10.1 Layout Guidelines
•
•
Place the input capacitor as close as possible to the IC.
Keep traces short between the IC and the CD capacitor to ensure the timing delay is as accurate as possible.
10.2 Layout Example
Figure 18 and Figure 19 are layout examples for the LM8365, which is taken from the LM8365EVM. For
information on the operation and schematic of the EVM, see the LM8365EVM User's Guide (SNVU493).
Figure 18. Layout Example
Figure 19. Top Layer Layout
14
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11 Device and Documentation Support
11.1 Device Support
11.1.1 Device Nomenclature
Figure 20. LM8365 IC Nomenclature
11.2 Documentation Support
11.2.1 Related Documentation
For related documentation, see the following:
LM8365EVM User's Guide, SNVU493
11.3 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
11.4 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
11.5 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
11.6 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
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12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
16
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PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
LM8365BALMF27/NOPB
ACTIVE
SOT-23
DBV
5
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
F07A
LM8365BALMFX27/NOPB
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
F07A
LM8365BALMFX45/NOPB
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
F06A
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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