LMC6024
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SNOS621D – AUGUST 2000 – REVISED MARCH 2013
LMC6024 Low Power CMOS Quad Operational Amplifier
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FEATURES
DESCRIPTION
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The LMC6024 is a CMOS quad operational amplifier
which can operate from either a single supply or dual
supplies. Its performance features include an input
common-mode range that reaches V−, low input bias
current and voltage gain (into 100 kΩ and 5 kΩ loads)
that is equal to or better than widely accepted bipolar
equivalents, while the power supply requirement is
less than 1 mW.
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Specified for 100 kΩ and 5 kΩ Loads
High Voltage Gain 120 dB
Low Offset Voltage Drift 2.5 μV/°C
Ultra Low Input Bias Vurrent 40 fA
Input Common-mode Range Includes V−
Operating Range from +5V to +15V Supply
Low Distortion 0.01% at 1 kHz
Slew Rate 0.11 V/μs
Micropower Operation 1 mW
APPLICATIONS
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This chip is built with Texas Instrument's advanced
Double-Poly Silicon-Gate CMOS process.
See the LMC6022 datasheet for a CMOS dual
operational amplifier with these same features.
High-impedance Buffer or Preamplifier
Current-to-voltage Converter
Long-term Integrator
Sample-and-hold Circuit
Peak Detector
Medical Instrumentation
Industrial Controls
Connection Diagram
Top View
Figure 1. 14-Pin DIP and SOIC Package
See Package Number D0014A
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
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2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2000–2013, Texas Instruments Incorporated
LMC6024
SNOS621D – AUGUST 2000 – REVISED MARCH 2013
Absolute Maximum Ratings
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(1) (2)
Differential Input Voltage
±Supply Voltage
Supply Voltage (V+ − V−)
16V
Lead Temperature
Soldering, 10 sec.
260°C
−65°C to +150°C
Storage Temperature Range
(V ) + 0.3V, (V−) − 0.3V
+
Voltage at Output/Input Pin
Current at Input Pin
±5 mA
Current at Output Pin
±18 mA
Current at Power Supply Pin
35 mA
Output Short Circuit to V+
See (3)
−
See (4)
Output Short Circuit to V
Junction Temperature
150°C
ESD Tolerance (5)
1000V
Power Dissipation
See (6)
(1)
(2)
(3)
(4)
(5)
(6)
Absolute Maximum Ratings indicate limits beyond which damage to the component may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but do not guarantee specific performance limits. For guaranteed specifications and test
conditions, see the Electrical Characteristics. The guaranteed specifications apply only for the test conditions listed.
If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and
specifications.
Do not connect output to V+ when V+ is greater than 13V or reliability may be adversely affected.
Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature and/or
multiple Op Amp shorts can result in exceeding the maximum allowed junction temperature of 150°C. Output currents in excess of ±30
mA over long term may adversly affect reliability.
Human body model, 100 pF discharge through a 1.5 kΩ resistor.
The maximum power dissipation is a function of TJ(max), θJA, and TA. The maximum allowable power dissipation at any ambient
temperature is PD = (TJ(max) − TA)/θJA.
Operating Ratings
−40°C ≤ TJ ≤ +85°C
Temperature Range
Supply Voltage Range
4.75V to 15.5V
See (1)
Power Dissipation
Thermal Resistance (θJA)
(2)
14-Pin DIP
14-Pin SOIC
(1)
(2)
2
85°C/W
115°C/W
For operating at elevated temperatures the device must be derated based on the thermal resistance θJA with PD = (TJ − TA)/θJA.
All numbers apply for packages soldered directly into a PC board.
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DC Electrical Characteristics
The following specifications apply for V+ = 5V, V− = 0V, VCM = 1.5V, VO = 2.5V, and RL = 1M unless otherwise noted.
Boldface limits apply at the temperature extremes; all other limits TJ = 25°C.
Parameter
VOS
Test Conditions
Input Offset Voltage
Typical (1)
1
ΔVOS/ΔT
Input Offset Voltage Average
Drift
2.5
IB
Input Bias Current
0.04
IOS
Input Offset Current
Input Resistance
CMRR
Common Mode Rejection
Ratio
0V ≤ VCM ≤ 12V
9
mV
Max
μV/°C
pA
200
Max
100
pA
Max
>1
Positive Power Supply
Rejection Ratio
5V ≤ V+ ≤ 15V
−PSRR
Negative Power Supply
Rejection Ratio
0V ≤ V− ≤ −10V
VCM
Input Common-Mode Voltage
Range
V+ = 5V and 15V
For CMRR ≥ 50 DB
83
V+ = 15V
Units
11
0.01
RIN
+PSRR
LMC6024I
Limit (2)
TeraΩ
63
dB
Min
61
83
63
dB
Min
61
94
74
−0.4
−0.1
dB
Min
73
0
V+ − 1.9
V
Max
V+ − 2.3
V
Min
V+ − 2.5
AV
Large Signal Voltage Gain
RL = 100 kΩ (3)
Sourcing
1000
200
100
Sinking
500
90
40
RL = 5 kΩ (3)
Sourcing
1000
Sinking
250
100
75
50
20
VO
Output Voltage Swing
V+ = 5V
RL = 100 kΩ to 2.5V
4.987
0.06
4.940
V
Min
V
Max
V
Min
4.00
0.040
0.25
14.970
14.00
V
Max
V
Min
13.90
0.007
0.06
0.09
14.840
V
Max
13.70
V
Min
13.50
0.110
0.32
0.40
(1)
(2)
(3)
V/mV
Min
4.20
0.35
V+ = 15V
RL = 5 kΩ to 7.5V
V/mV
Min
4.40
0.09
V+ = 15V
RL = 100 kΩ to 7.5V
V/mV
Min
4.43
0.004
V+ = 5V
RL = 5 kΩ to 2.5V
V/mV
Min
V
Max
Typical values represent the most likely parametric norm.
All limits are guaranteed by testing or correlation.
V+ = 15V, VCM = 7.5V, and RL connected to 7.5V. For Sourcing tests, 7.5V ≤ VO ≤ 11.5V. For Sinking tests, 2.5V ≤ VO ≤ 7.5V.
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DC Electrical Characteristics (continued)
The following specifications apply for V+ = 5V, V− = 0V, VCM = 1.5V, VO = 2.5V, and RL = 1M unless otherwise noted.
Boldface limits apply at the temperature extremes; all other limits TJ = 25°C.
Parameter
IO
Output Current
Test Conditions
V+ = 5V
Sourcing, VO = 0V
Sinking VO = 5V (4)
Typical (1)
LMC6024I
Limit (2)
22
13
Units
mA
Min
9
21
13
mA
Min
9
V+ = 15V
Sourcing, VO = 0V
Sinking, VO = 13V
40
23
mA
Min
15
(5)
39
23
160
240
mA
Min
15
IS
(4)
(5)
Supply Current
All Four Amplifiers
VO = 1.5V
μA
Max
280
Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature and/or
multiple Op Amp shorts can result in exceeding the maximum allowed junction temperature of 150°C. Output currents in excess of ±30
mA over long term may adversly affect reliability.
Do not connect output to V+ when V+ is greater than 13V or reliability may be adversely affected.
AC Electrical Characteristics
The following specifications apply for V+ = 5V, V− = 0V, VCM = 1.5V, VO = 2.5V, and RL = 1M unless otherwise noted.
Boldface limits apply at the temperature extremes; all other limits TJ = 25°C.
Parameter
SR
Slew Rate
Test Conditions
See
(3)
Typical (1)
LMC6024I
Limit (2)
0.11
0.05
0.03
Units
V/μs
Min
GBW
Gain-Bandwidth Product
0.35
MHz
θM
Phase Margin
50
Deg
GM
Gain Margin
17
dB
(4)
Amp-to-Amp Isolation
See
130
dB
en
Input-Referred Voltage Noise
F = 1 kHz
42
nV/√Hz
in
Input-Referred Current Noise
F = 1 kHz
0.0002
pA/√Hz
(1)
(2)
(3)
(4)
4
Typical values represent the most likely parametric norm.
All limits are guaranteed by testing or correlation.
V+ = 15V. Connected as Voltage Follower with 10V step input. Number specified is the slower of the positive and negative slew rates.
Input referred, V+ = 15V and RL = 100 kΩ connected to 7.5V. Each amp excited in turn with 1 kHz to produce VO = 13 VPP.
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Typical Performance Characteristics
VS = ±7.5V, TA = 25°C unless otherwise specified
Supply Current
vs Supply Voltage
Input Bias Current
vs Temperature
Figure 2.
Figure 3.
Common-Mode Voltage
Range
vs
Temperature
Output Characteristics
Current Sinking
Figure 4.
Figure 5.
Output Characteristics
Current Sourcing
Input Voltage Noise
vs Frequency
Figure 6.
Figure 7.
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Typical Performance Characteristics (continued)
VS = ±7.5V, TA = 25°C unless otherwise specified
6
Crosstalk Rejection
vs Frequency
CMRR
vs
Frequency
Figure 8.
Figure 9.
CMRR
vs
Temperature
Power Supply Rejection
Ratio
vs
Frequency
Figure 10.
Figure 11.
Open-Loop Voltage
Gain
vs
Temperature
Open-Loop
Frequency Response
Figure 12.
Figure 13.
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Typical Performance Characteristics (continued)
VS = ±7.5V, TA = 25°C unless otherwise specified
Gain and Phase Responses
vs Load Capacitance
Gain and Phase
Responses
vs
Temperature
Figure 14.
Figure 15.
Gain Error
(VOS
vs
VOUT)
Non-Inverting Slew Rate
vs Temperature
Figure 16.
Figure 17.
Inverting Slew Rate
vs Temperature
Large-Signal Pulse
Non-Inverting Response
(AV = +1)
Figure 18.
Figure 19.
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Typical Performance Characteristics (continued)
VS = ±7.5V, TA = 25°C unless otherwise specified
Non-Inverting Small
Signal Pulse Response
(AV = +1)
Inverting Large-Signal
Pulse Response
Figure 20.
Figure 21.
Inverting Small-Signal
Pulse Response
Stability
vs
Capacitive Load
Figure 22.
Avoid resistive loads of less than 500Ω, as they may cause instability.
Figure 23.
Stability
vs
Capacitive Load
Figure 24.
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SNOS621D – AUGUST 2000 – REVISED MARCH 2013
APPLICATION HINTS
AMPLIFIER TOPOLOGY
The topology chosen for the LMC6024 is unconventional (compared to general-purpose op amps) in that the
traditional unity-gain buffer output stage is not used; instead, the output is taken directly from the output of the
integrator, to allow rail-to-rail output swing. Since the buffer traditionally delivers the power to the load, while
maintaining high op amp gain and stability, and must withstand shorts to either rail, these tasks now fall to the
integrator.
As a result of these demands, the integrator is a compound affair with an embedded gain stage that is doubly fed
forward (via Cf and Cff) by a dedicated unity-gain compensation driver. In addition, the output portion of the
integrator is a push-pull configuration for delivering heavy loads. While sinking current the whole amplifier path
consists of three gain stages with one stage fed forward, whereas while sourcing the path contains four gain
stages with two fed forward.
Figure 25. LMC6024 Circuit Topology (Each Amplifier)
The large signal voltage gain while sourcing is comparable to traditional bipolar op amps, for load resistance of at
least 5 kΩ. The gain while sinking is higher than most CMOS op amps, due to the additional gain stage;
however, when driving load resistance of 5 kΩ or less, the gain will be reduced as indicated in the Electrical
Characterisitics. The op amp can drive load resistance as low as 500Ω without instability.
COMPENSATING INPUT CAPACITANCE
Refer to the LMC660 or LMC662 datasheets to determine whether or not a feedback capacitor will be necessary
for compensation and what the value of that capacitor would be.
CAPACITIVE LOAD TOLERANCE
Like many other op amps, the LMC6024 may oscillate when its applied load appears capacitive. The threshold of
oscillation varies both with load and circuit gain. The configuration most sensitive to oscillation is a unity-gain
follower. See the Typical Performance Characteristics.
The load capacitance interacts with the op amp's output resistance to create an additional pole. If this pole
frequency is sufficiently low, it will degrade the op amp's phase margin so that the amplifier is no longer stable at
low gains. The addition of a small resistor (50Ω to 100Ω) in series with the op amp's output, and a capacitor (5
pF to 10 pF) from inverting input to output pins, returns the phase margin to a safe value without interfering with
lower-frequency circuit operation. Thus, larger values of capacitance can be tolerated without oscillation. Note
that in all cases, the output will ring heavily when the load capcitance is near the threshold for oscillation.
Figure 26. Rx, Cx Improve Capacitive Load Tolerance
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Capacitive load driving capability is enhanced by using a pull up resistor to V+ (Figure 27). Typically a pull up
resistor conducting 50 μA or more will significantly improve capacitive load responses. The value of the pull up
resistor must be determined based on the current sinking capability of the amplifier with respect to the desired
output swing. Open loop gain of the amplifier can also be affected by the pull up resistor (see DC Electrical
Characteristics).
Figure 27. Compensating for Large
Capacitive Loads with a Pull Up Resistor
PRINTED-CIRCUIT-BOARD LAYOUT
FOR HIGH-IMPEDANCE WORK
It is generally recognized that any circuit which must operate with less than 1000 pA of leakage current requires
special layout of the PC board. When one wishes to take advantage of the ultra-low bias current of the
LMC6024, typically less than 0.04 pA, it is essential to have an excellent layout. Fortunately, the techniques for
obtaining low leakages are quite simple. First, the user must not ignore the surface leakage of the PC board,
even though it may sometimes appear acceptably low, because under conditions of high humidity or dust or
contamination, the surface leakage will be appreciable.
To minimize the effect of any surface leakage, lay out a ring of foil completely surrounding the LMC6024's inputs
and the terminals of capacitors, diodes, conductors, resistors, relay terminals, etc. connected to the op-amp's
inputs. See Figure 28. To have a significant effect, guard rings should be placed on both the top and bottom of
the PC board. This PC foil must then be connected to a voltage which is at the same voltage as the amplifier
inputs, since no leakage current can flow between two points at the same potential. For example, a PC board
trace-to-pad resistance of 1012 ohms, which is normally considered a very large resistance, could leak 5 pA if the
trace were a 5V bus adjacent to the pad of an input. This would cause a 100 times degradation from the
LMC6024's actual performance. However, if a guard ring is held within 5 mV of the inputs, then even a
resistance of 1011 ohms would cause only 0.05 pA of leakage current, or perhaps a minor (2:1) degradation of
the amplifier's performance. See Figure 28, Figure 30, and Figure 31 for typical connections of guard rings for
standard op-amp configurations. If both inputs are active and at high impedance, the guard can be tied to ground
and still provide some protection; see Figure 32.
Figure 28. Example of Guard Ring in P.C. Board Layout (Using the LMC6024)
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Guard Ring Connections
Figure 29. Inverting Amplifier Guard Ring
Connections
Figure 30. Non-Inverting Amplifier Guard Ring
Connections
Figure 31. Follower Guard Ring Connections
Figure 32. Howland Current Pump Guard Ring
Connections
The designer should be aware that when it is inappropriate to lay out a PC board for the sake of just a few
circuits, there is another technique which is even better than a guard ring on a PC board: Don't insert the
amplifier's input pin into the board at all, but bend it up in the air and use only air as an insulator. Air is an
excellent insulator. In this case you may have to forego some of the advantages of PC board construction, but
the advantages are sometimes well worth the effort of using point-to-point up-in-the-air wiring. See Figure 33.
(Input pins are lifted out of PC board and soldered directly to components. All other pins connected to PC board.)
Figure 33. Air Wiring
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BIAS CURRENT TESTING
The test method of Figure 34 is appropriate for bench-testing bias current with reasonable accuracy. To
understand its operation, first close switch S2 momentarily. When S2 is opened, then
(1)
Figure 34. Simple Input Bias Current Test Circuit
A suitable capacitor for C2 would be a 5 pF or 10 pF silver mica, NPO ceramic, or air-dielectric. When
determining the magnitude of I−, the leakage of the capacitor and socket must be taken into account. Switch S2
should be left shorted most of the time, or else the dielectric absorption of the capacitor C2 could cause errors.
Similarly, if S1 is shorted momentarily (while leaving S2 shorted)
(2)
where Cx is the stray capacitance at the +input.
Typical Single-Supply Applications
(V+ = 5.0 VDC)
A 5V bias on the photodiode can cut its capacitance by a factor of 2 or 3, leading to improved response and lower
noise. However, this bias on the photodiode will cause photodiode leakage (also known as its dark current).
Figure 35. Photodiode Current-to-Voltage Converter
12
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(V+ = 5.0 VDC)
Figure 36.
(Upper limit of output range dictated by input common-mode range; lower limit dictated by minimum current
requirement of LM385.)
Figure 37. Micropower Current Source
Figure 38. Low-Leakage Sample-and-Hold
If R1 = R5, R3 = R6, and R4 = R7;
Then
.
∴AV ≈ 100 for circuit shown.
For good CMRR over temperature, low drift resistors should be used. Matching of R3 to R6 and R4 to R7 affects
CMRR. Gain may be adjusted through R2. CMRR may be adjusted through R7.
Figure 39. Instrumentation Amplifier
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(V+ = 5.0 VDC)
fO = 10 Hz
Q = 2.1
Gain = −8.8
Figure 40. 10 Hz Bandpass Filter
fc = 10 Hz
d = 0.895
Gain = 1
Figure 41. 10 Hz High-Pass Filter (2 dB Dip)
Figure 42. 1 Hz Low-Pass Filter (Maximally Flat, Dual Supply Only)
14
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(V+ = 5.0 VDC)
Gain = −46.8
Output offset voltage reduced to the
level of the input offset voltage of
the bottom amplifier (typically 1 mV),
referred to VBIAS.
Figure 43. High Gain Amplifier with Offset Voltage Reduction
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REVISION HISTORY
Changes from Revision C (March 2013) to Revision D
•
16
Page
Changed layout of National Data Sheet to TI format .......................................................................................................... 15
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PACKAGE OPTION ADDENDUM
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10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
LMC6024IM/NOPB
ACTIVE
SOIC
D
14
55
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
LMC6024IM
LMC6024IMX/NOPB
ACTIVE
SOIC
D
14
2500
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
LMC6024IM
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of