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LMC6482
SNOS674G – NOVEMBER 1997 – REVISED APRIL 2020
LMC6482 CMOS Dual Rail-to-Rail Input and Output Operational Amplifier
1 Features
3 Description
•
•
The LMC6482 device provides a common-mode
range that extends to both supply rails. This rail-to-rail
performance combined with excellent accuracy, due
to a high CMRR, makes this device unique among
rail-to-rail input amplifiers. The device is an excellent
choice for systems, such as data acquisition, that
require a large input signal range. The LMC6482 is
also an excellent upgrade for circuits using limited
common-mode range amplifiers, such as the TLC272
and TLC277.
1
•
•
•
•
•
•
•
•
Specifications are typical unless otherwise noted
Rail-to-rail input common-mode voltage range
(specified over temperature)
Rail-to-rail output swing (within 20-mV of supply
rail, 100-kΩ load)
Specified 3-V, 5-V, and 15-V performance
Excellent CMRR and PSRR: 82 dB
Ultra-low input current: 20 fA
High voltage gain (RL = 500 kΩ): 130 dB
Specified for 2-kΩ and 600-Ω loads
Power-good output
Packages: PDIP, SOIC, and VSSOP
2 Applications
•
•
•
•
•
•
•
•
•
•
•
Maximum dynamic signal range is provided in low
voltage and single supply systems by the rail-to-rail
output swing of the LMC6482. The rail-to-rail output
swing is maintained for loads down to 600 Ω of the
device. Specified low-voltage characteristics and lowpower dissipation make the LMC6482 a great choice
for battery-operated systems.
Data acquisition (DAQ)
Currency counter
Oscilloscope (DSO)
Intra-DC interconnect (METRO)
Macro remote radio unit (RRU)
Multiparameter patient monitor
Merchant telecom rectifiers
Train control and management
Process analytics (pH, gas, concentration, force,
and humidity)
Three phase UPS
Improved replacement for TLC272, TLC277
The LMC6482 is available in 8-pin PDIP and SOIC
packages. The device is also available in a VSSOP
package, almost half the size of a SOIC-8 device.
See the LMC6484 for a quad CMOS operational
amplifier with these same features.
Rail-to-Rail Input
Rail-to-Rail Output
A1
Device Information(1)
PART NUMBER
LMC6482
BODY SIZE (NOM)
4.90 mm × 3.91 mm
VSSOP (8)
3.00 mm × 3.00 mm
PDIP (8)
9.81 mm × 6.35 mm
(1) For all available packages, see the package option addendum
at the end of the data sheet.
±0.18 V
A2
3V
PACKAGE
SOIC (8)
±0.18 V
3V
0V
0V
500mV
50 s
500mV
C001
50 s
C002
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
LMC6482
SNOS674G – NOVEMBER 1997 – REVISED APRIL 2020
www.ti.com
Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
3
6.1
6.2
6.3
6.4
6.5
6.6
6.7
3
4
4
4
4
7
9
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics for V+ = 5 V.......................
Electrical Characteristics for V+ = 3 V.......................
Typical Characteristics ..............................................
Detailed Description ............................................ 18
7.1 Overview ................................................................. 18
7.2 Functional Block Diagram ....................................... 18
7.3 Feature Description................................................. 18
7.4 Device Functional Modes........................................ 19
8
Application and Implementation ........................ 20
8.1 Application Information............................................ 20
8.2 Typical Applications ............................................... 22
9 Power Supply Recommendations...................... 28
10 Layout................................................................... 28
10.1 Layout Guidelines ................................................. 28
10.2 Layout Example .................................................... 28
11 Device and Documentation Support ................. 30
11.1
11.2
11.3
11.4
11.5
Receiving Notification of Documentation Updates
Support Resources ...............................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
30
30
30
30
30
12 Mechanical, Packaging, and Orderable
Information ........................................................... 30
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision F (April 2020) to Revision G
•
Deleted old note 4 from Electrical Characteristics for V+ = 5 V table. ................................................................................... 4
Changes from Revision E (April 2015) to Revision F
•
2
Page
Added Pin Configuration and Functions section, ESD Ratings table, Feature Description section, Device Functional
Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device
and Documentation Support section, and Mechanical, Packaging, and Orderable Information section .............................. 1
Changes from Revision C (March 2013) to Revision D
•
Page
Changed junction temperature max value from –85°C to 85°C (typo) in Recommended Operating Conditions table.......... 4
Changes from Revision D (March 2013) to Revision E
•
Page
Page
Changed layout of National Semiconductor Data Sheet to TI format .................................................................................. 27
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SNOS674G – NOVEMBER 1997 – REVISED APRIL 2020
5 Pin Configuration and Functions
D, DGK, and P Packages
8-Pin SOIC, VSSOP, and PDIP
Top View
Pin Functions
PIN
TYPE
DESCRIPTION
NO.
NAME
1
OUTPUT A
O
Output for Amplifier A
2
INVERTING INPUT A
I
Inverting input for Amplifier A
3
NONINVERTING INPUT A
I
Noninverting input for Amplifier A
4
V–
P
Negative supply voltage input
5
NONINVERTING INPUT B
I
Noninverting input for Amplifier B
6
INVERTING INPUT B
I
Inverting input for Amplifier B
7
OUTPUT B
O
Output for Amplifier B
8
V+
P
Positive supply voltage input
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1) (2)
MIN
Differential input voltage
(V−) – 0.3
Voltage at input/output pin
−
+
Supply voltage (V − V )
Current at input pin
(3)
Current at output pin (4) (5)
(1)
(2)
(3)
(4)
(5)
(6)
V
V
5
mA
–30
30
mA
(6)
Storage temperature
(V+) + 0.3
16
Lead temperature (soldering, 10 sec.)
Tstg
UNIT
−5
Current at power supply pin
Junction temperature
MAX
±Supply Voltage
–65
40
mA
260
°C
150
°C
150
°C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
If Military/Aerospace specified devices are required, please contact the TI Sales Office/Distributors for availability and specifications.
Limiting input pin current is only necessary for input voltages that exceed absolute maximum input voltage ratings.
Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in
exceeding the maximum allowed junction temperature of 150°C. Output currents in excess of ±30 mA over long term may adversely
affect reliability.
Do not short circuit output to V+, when V+ is greater than 13 V or reliability will be adversely affected.
The maximum power dissipation is a function of TJ(max), RθJA, and TA. The maximum allowable power dissipation at any ambient
temperature is PD = (TJ(max) − TA)/θJA. All numbers apply for packages soldered directly into a PC board.
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6.2 ESD Ratings
V(ESD)
(1)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
VALUE
UNIT
±1500
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted) (1)
MIN
MAX
3
15.5
V
LMC6482AM
–55
125
°C
LMC6482AI, LMC6482I
–40
85
°C
Supply voltage
Junction temperature
(1)
UNIT
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6.4 Thermal Information
THERMAL METRIC
RθJA
(1)
(1)
LMC6482
LMC6482
LMC6482
D (SOIC)
DGK (VSSOP)
P (PDIP)
8 PINS
8 PINS
8 PINS
155
194
90
Junction-to-ambient thermal resistance
UNIT
°C/W
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6.5 Electrical Characteristics for V+ = 5 V
unless otherwise specified, all limits specified for TJ = 25°C, V+ = 5 V, V− = 0 V, VCM = VO = V+/2 and RL > 1 MΩ.
PARAMETER
AT TEMPERATURE
EXTREMES (1)
TJ = 25°C
TEST CONDITIONS
MIN
TYP (2)
MAX (3)
MIN
TYP (2)
UNIT
MAX (3)
DC ELECTRICAL CHARACTERISTICS
Input offset
voltage
VOS
TCVOS
IB
IOS
CIN
RIN
(1)
(2)
(3)
4
LMC6482AI
0.11
0.75
1.35
LMC6482I
0.11
3
3.7
LMC6482M
0.11
3
3.8
Input offset
voltage
average drift
Input current
Input offset
current
mV
1
μV/°C
LMC6482AI
0.02
4
LMC6482I
0.02
4
LMC6482M
0.02
10
LMC6482AI
0.01
2
LMC6482I
0.01
2
LMC6482M
0.01
5
Commonmode input
capacitance
pA
pA
3
pF
Input
resistance
10
TeraΩ
See Recommended Operating Conditions for operating temperature ranges.
Typical values represent the most likely parametric norm.
All limits are specified by testing or statistical analysis.
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Electrical Characteristics for V+ = 5 V (continued)
unless otherwise specified, all limits specified for TJ = 25°C, V+ = 5 V, V− = 0 V, VCM = VO = V+/2 and RL > 1 MΩ.
PARAMETER
MIN
CMRR
Commonmode rejection
ratio
0 V ≤ VCM ≤ 15 V
V+ = 15 V
0 V ≤ VCM ≤ 5 V
V+ = 5 V
+
Positive power 5 V ≤ V ≤ 15 V,
+PSRR supply
V− = 0 V
rejection ratio VO = 2.5 V
Negative
−PSRR power supply
rejection ratio
Input
commonmode voltage
VCM
−
−5 V ≤ V ≤ −15 V,
V+ = 0 V
VO = −2.5 V
V+ = 5 V and 15 V
For CMRR ≥ 50 dB
MAX (3)
MIN
70
82
67
LMC6482I
65
82
62
LMC6482M
65
82
60
LMC6482AI
70
82
67
LMC6482I
65
82
62
LMC6482M
65
82
60
LMC6482AI
70
82
67
LMC6482I
65
82
62
LMC6482M
65
82
60
LMC6482AI
70
82
67
LMC6482I
65
82
62
LMC6482M
65
82
60
TYP (2)
UNIT
MAX (3)
dB
dB
dB
LMC6482AI
V− − 0.3
−0.25
0
LMC6482I
V− − 0.3
−0.25
0
LMC6482M
V− − 0.3
−0.25
0
LMC6482AI
V+ +
0.25
V+ + 0.3
V+
LMC6482I
V+ +
0.25
V+ + 0.3
V+
LMC6482M
V+ +
0.25
V+ + 0.3
V+
140
666
84
Sourcing LMC6482I
RL = 2 kΩ (4)
Sinking
Large signal
voltage gain
120
666
72
LMC6482M
120
666
60
LMC6482AI
35
75
20
LMC6482I
35
75
20
LMC6482M
35
75
18
LMC6482AI
80
300
48
50
300
30
LMC6482M
50
300
25
LMC6482AI
20
35
13
LMC6482I
15
35
10
LMC6482M
15
35
8
Sourcing LMC6482I
RL = 600 Ω (4)
Sinking
(4)
TYP (2)
LMC6482AI
LMC6482AI
AV
AT TEMPERATURE
EXTREMES (1)
TJ = 25°C
TEST CONDITIONS
V
V
V/mV
V/mV
V/mV
V/mV
+
V = 15 V, VCM = 7.5 V and RL connected to 7.5 V. For sourcing tests, 7.5 V ≤ VO ≤ 11.5 V. For sinking tests, 3.5 V ≤ VO ≤ 7.5 V.
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Electrical Characteristics for V+ = 5 V (continued)
unless otherwise specified, all limits specified for TJ = 25°C, V+ = 5 V, V− = 0 V, VCM = VO = V+/2 and RL > 1 MΩ.
PARAMETER
MIN
V+ = 5 V
RL = 2 kΩ to V+/2
TYP (2)
V =5V
RL = 600 Ω to V+/2
VO
Output swing
+
V = 15 V
RL = 2k Ω to V+/2
+
V = 15 V
RL = 600 Ω to V+/2
Sourcing, VO = 0 V
ISC
Output short
circuit current
V+ = 5 V
Sinking, VO = 5 V
Sourcing, VO = 0 V
ISC
Output short
circuit current
V+ = 15 V
Sinking,
VO = 12 V (5)
Both Amplifiers
V+ = +5 V,
VO = V+/2
IS
Supply current
Both Amplifiers
V+ = 15 V,
VO = V+/2
(5)
6
MAX (3)
MIN
LMC6482AI
4.8
4.9
4.7
LMC6482I
4.8
4.9
4.7
LMC6482M
4.8
4.9
TYP (2)
UNIT
MAX (3)
4.7
LMC6482AI
0.1
0.18
0.24
LMC6482I
0.1
0.18
0.24
0.1
0.18
LMC6482M
+
AT TEMPERATURE
EXTREMES (1)
TJ = 25°C
TEST CONDITIONS
V
0.24
LMC6482AI
4.5
4.7
4.24
LMC6482I
4.5
4.7
4.24
LMC6482M
4.5
4.7
4.24
LMC6482AI
0.3
0.5
0.65
LMC6482I
0.3
0.5
0.65
LMC6482M
0.3
0.5
0.65
LMC6482AI
14.4
14.7
14.2
LMC6482I
14.4
14.7
14.2
LMC6482M
14.4
14.7
14.2
LMC6482AI
0.16
0.32
0.45
LMC6482I
0.16
0.32
0.45
LMC6482M
0.16
0.32
0.45
LMC6482AI
13.4
14.1
13
LMC6482I
13.4
14.1
13
LMC6482M
13.4
14.1
13
LMC6482AI
0.5
1
1.3
LMC6482I
0.5
1
1.3
LMC6482M
0.5
1
V
V
V
1.3
LMC6482AI
16
20
12
LMC6482I
16
20
12
LMC6482M
16
20
10
LMC6482AI
11
15
9.5
LMC6482I
11
15
9.5
LMC6482M
11
15
8
LMC6482AI
28
30
22
LMC6482I
28
30
22
LMC6482M
28
30
20
LMC6482AI
30
30
24
LMC6482I
30
30
24
LMC6482M
30
30
mA
mA
mA
mA
22
LMC6482AI
1
1.4
1.8
LMC6482I
1
1.4
1.8
LMC6482M
1
1.4
1.9
LMC6482AI
1.3
1.6
1.9
LMC6482I
1.3
1.6
1.9
LMC6482M
1.3
1.6
2
mA
mA
Do not short circuit output to V+, when V+ is greater than 13 V or reliability will be adversely affected.
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Electrical Characteristics for V+ = 5 V (continued)
unless otherwise specified, all limits specified for TJ = 25°C, V+ = 5 V, V− = 0 V, VCM = VO = V+/2 and RL > 1 MΩ.
PARAMETER
AT TEMPERATURE
EXTREMES (1)
TJ = 25°C
TEST CONDITIONS
MIN
TYP (2)
MAX (3)
MIN
TYP (2)
UNIT
MAX (3)
AC ELECTRICAL CHARACTERISTICS
LMC6482AI
SR
Slew rate
(6)
GBW
Gainbandwidth
product
φm
Gm
1
1.3
0.7
LMC6482I
0.9
1.3
0.63
LMC6482M
0.9
1.3
0.54
V+ = 15 V
1.5
MHz
Phase margin
50
Deg
Gain margin
15
dB
150
dB
37
nV/√Hz
0.03
pA/√Hz
(7)
Amp-to-amp
isolation
See
en
Input-referred
voltage noise
F = 1 kHz
Vcm = 1 V
In
Input-referred
current noise
F = 1 kHz
T.H.D.
(6)
(7)
V/μs
Total
harmonic
distortion
F = 10 kHz, AV = −2
RL = 10 kΩ,
VO = 4.1 VPP
0.01%
F = 10 kHz, AV = −2
RL = 10 kΩ,
VO = 8.5 VPP
V+ = 10 V
0.01%
V + = 15V. Connected as voltage follower with 10-V step input. Number specified is the slower of either the positive or negative slew
rates.
Input referred, V+ = 15 V and RL = 100 kΩ connected to 7.5 V. Each amp excited in turn with 1 kHz to produce VO = 12 VPP.
6.6 Electrical Characteristics for V+ = 3 V
Unless otherwise specified, all limits specified for TJ = 25°C, V+ = 3 V, V− = 0 V, VCM = VO = V+/2 and RL > 1 MΩ.
PARAMETER
AT TEMPERATURE
EXTREMES (1)
TJ = 25°C
TEST CONDITIONS
MAX (3)
LMC6482AI
0.9
2
2.7
LMC6482I
0.9
3
3.7
LMC6482M
0.9
3
3.8
MIN
TYP (2)
UNIT
TYP (2)
MIN
MAX (3)
DC ELECTRICAL CHARACTERISTICS
Input offset
voltage
VOS
TCVOS
Input offset
voltage
average drift
IB
Input bias
current
0.02
IOS
Input offset
current
0.01
CMRR
Common
mode rejection 0 V ≤ VCM ≤ 3 V
ratio
(1)
(2)
(3)
2
LMC6482AI
64
74
LMC6482I
60
74
LMC6482M
60
74
mV
μV/°C
pA
pA
dB
See Recommended Operating Conditions for operating temperature ranges.
Typical values represent the most likely parametric norm.
All limits are specified by testing or statistical analysis.
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Electrical Characteristics for V+ = 3 V (continued)
Unless otherwise specified, all limits specified for TJ = 25°C, V+ = 3 V, V− = 0 V, VCM = VO = V+/2 and RL > 1 MΩ.
PARAMETER
PSRR
Power supply
rejection ratio
3 V ≤ V+ ≤ 15 V,
V− = 0 V
Input common- For CMRR ≥ 50
mode voltage dB
VCM
MIN
TYP (2)
LMC6482AI
68
80
LMC6482I
60
80
LMC6482M
60
0
V− −0.25
0
−
LMC6482M
V −0.25
LMC6482AI
V+ V+ + 0.25
LMC6482I
V+ V+ + 0.25
V
RL = 600 Ω to
V+/2
IS
Supply current
Both amplifiers
TYP (2)
UNIT
MAX (3)
80
LMC6482I
+
MIN
dB
V− −0.25
V
0
V
+
V + 0.25
2.8
RL = 2 kΩ to V+/2
Output swing
MAX (3)
LMC6482AI
LMC6482M
VO
AT TEMPERATURE
EXTREMES (1)
TJ = 25°C
TEST CONDITIONS
0.2
LMC6482AI
2.5
2.7
LMC6482I
2.5
2.7
LMC6482M
2.5
2.7
V
LMC6482AI
0.37
0.6
LMC6482I
0.37
0.6
LMC6482M
0.37
0.6
LMC6482AI
0.825
1.2
1.5
LMC6482I
0.825
1.2
1.5
LMC6482M
0.825
1.2
1.6
mA
AC ELECTRICAL CHARACTERISTICS
Slew rate
GBW
Gainbandwidth
product
T.H.D.
Total harmonic f = 10 kHz, AV = −2
distortion
RL = 10 kΩ, VO = 2 VPP
(4)
8
See
(4)
SR
0.9
V/μs
1
MHz
0.01%
Connected as voltage follower with 2-V step input. Number specified is the slower of either the positive or negative slew rates.
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6.7 Typical Characteristics
at VS = 15 V, single supply, and TA = 25°C (unless otherwise specified)
Figure 1. Supply Current vs Supply Voltage
Figure 2. Input Current vs Temperature
Figure 3. Sourcing Current vs Output Voltage
Figure 4. Sourcing Current vs Output Voltage
Figure 5. Sourcing Current vs Output Voltage
Figure 6. Sinking Current vs Output Voltage
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Typical Characteristics (continued)
at VS = 15 V, single supply, and TA = 25°C (unless otherwise specified)
Figure 7. Sinking Current vs Output Voltage
Figure 9. Output Voltage Swing vs Supply Voltage
Figure 11. Input Voltage Noise vs Input Voltage
10
Figure 8. Sinking Current vs Output Voltage
Figure 10. Input Voltage Noise vs Frequency
Figure 12. Input Voltage Noise vs Input Voltage
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Typical Characteristics (continued)
at VS = 15 V, single supply, and TA = 25°C (unless otherwise specified)
Figure 13. Input Voltage Noise vs Input Voltage
Figure 14. Crosstalk Rejection vs Frequency
Figure 15. Crosstalk Rejection vs Frequency
Figure 16. Positive PSRR vs Frequency
Figure 17. Negative PSRR vs Frequency
Figure 18. CMRR vs Frequency
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Typical Characteristics (continued)
at VS = 15 V, single supply, and TA = 25°C (unless otherwise specified)
12
Figure 19. CMRR vs Input Voltage
Figure 20. CMRR vs Input Voltage
Figure 21. CMRR vs Input Voltage
Figure 22. ΔvOS vs CMR
Figure 23. ΔvOS vs CMR
Figure 24. Input Voltage vs Output Voltage
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Typical Characteristics (continued)
at VS = 15 V, single supply, and TA = 25°C (unless otherwise specified)
Figure 25. Input Voltage vs Output Voltage
Figure 26. Open-Loop Frequency Response
Figure 27. Open-Loop Frequency Response
Figure 28. Open-Loop Frequency Response vs Temperature
Figure 29. Maximum Output Swing vs Frequency
Figure 30. Gain and Phase vs Capacitive Load
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Typical Characteristics (continued)
at VS = 15 V, single supply, and TA = 25°C (unless otherwise specified)
14
Figure 31. Gain and Phase vs Capacitive Load
Figure 32. Open-Loop Output Impedance vs Frequency
Figure 33. Open-Loop Output Impedance vs Frequency
Figure 34. Slew Rate vs Supply Voltage
Figure 35. Noninverting Large Signal Pulse Response
Figure 36. Noninverting Large Signal Pulse Response
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Typical Characteristics (continued)
at VS = 15 V, single supply, and TA = 25°C (unless otherwise specified)
Figure 37. Noninverting Large Signal Pulse Response
Figure 38. Noninverting Small Signal Pulse Response
Figure 39. Noninverting Small Signal Pulse Response
Figure 40. Noninverting Small Signal Pulse Response
Figure 41. Inverting Large Signal Pulse Response
Figure 42. Inverting Large Signal Pulse Response
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Typical Characteristics (continued)
at VS = 15 V, single supply, and TA = 25°C (unless otherwise specified)
16
Figure 43. Inverting Large Signal Pulse Response
Figure 44. Inverting Small Signal Pulse Response
Figure 45. Inverting Small Signal Pulse Response
Figure 46. Inverting Small Signal Pulse Response
Figure 47. Stability vs Capacitive Load
Figure 48. Stability vs Capacitive Load
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Typical Characteristics (continued)
at VS = 15 V, single supply, and TA = 25°C (unless otherwise specified)
Figure 49. Stability vs Capacitive Load
Figure 50. Stability vs Capacitive Load
Figure 51. Stability vs Capacitive Load
Figure 52. Stability vs Capacitive Load
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7 Detailed Description
7.1 Overview
The LMC6482 is a dual CMOS operational amplifier that supports both rail-to-rail inputs and outputs. The device
can be operated in both dual-supply mode and single-supply mode.
7.2 Functional Block Diagram
7.3 Feature Description
7.3.1 Amplifier Topology
The LMC6482 incorporates specially designed wide-compliance range current mirrors and the body effect to
extend input common-mode range to each supply rail. Complementary paralleled differential input stages, like the
type used in other CMOS and bipolar rail-to-rail input amplifiers, were not used because of their inherent
accuracy problems due to CMRR, crossover distortion, and open-loop gain variation.
The LMC6482s input stage design is complemented by an output stage capable of rail-to-rail output swing even
when driving a large load. Rail-to-rail output swing is obtained by taking the output directly from the internal
integrator instead of an output buffer stage.
7.3.2 Input Common-Mode Voltage Range
Unlike Bi-FET amplifier designs, the LMC6482 does not exhibit phase inversion when an input voltage exceeds
the negative supply voltage. Figure 53 shows an input voltage exceeding both supplies with no resulting phase
inversion on the output.
An input voltage signal exceeds the lMC6482 power supply voltages with no output phase inversion.
Figure 53. Input Voltage
18
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Feature Description (continued)
The absolute maximum input voltage is 300 mV beyond either supply rail at room temperature. Voltages greatly
exceeding this absolute maximum rating, as in Figure 54, can cause excessive current to flow in or out of the
input pins possibly affecting reliability.
NOTE: A ±7.5-V input signal greatly exceeds the 3-V supply in Figure 55 causing no phase inversion due to RI.
Figure 54. Input Signal
Applications that exceed this rating must externally limit the maximum input current to ±5 mA with an input
resistor (RI) as shown in Figure 55.
NOTE: RI input current protection for voltages exceeding the supply voltages.
Figure 55. RI Input Current Protection for
Voltages Exceeding the Supply Voltages
7.3.3 Rail-to-Rail Output
The approximated output resistance of the LMC6482 is 180-Ω sourcing and 13-0Ω sinking at VS = 3 V and 110-Ω
sourcing and 80-Ω sinking at VS = 5 V. Using the calculated output resistance, the maximum output voltage
swing can be estimated as a function of load.
7.4 Device Functional Modes
The LMC6482 can be used in applications where each amplifier channel is used independently, or in applications
in which the channels are cascaded. See the Typical Applications section for more information.
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8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
8.1.1 Upgrading Applications
The LMC6484 quads and LMC6482 duals have industry-standard pin outs to retrofit existing applications.
System performance can be greatly increased by the features of the LMC6482. The key benefit of designing in
the LMC6482 is increased linear signal range. Most op-amps have limited input common-mode ranges. Signals
that exceed this range generate a nonlinear output response that persists long after the input signal returns to
the common-mode range.
Linear signal range is vital in applications such as filters where signal peaking can exceed input common-mode
ranges resulting in output phase inversion or severe distortion.
8.1.2 Data Acquisition Systems
Low power, single supply data acquisition system solutions are provided by buffering the ADC12038 with the
LMC6482 (Figure 56). Capable of using the full supply range, the LMC6482 does not require input signals to be
scaled down to meet limited common-mode voltage ranges. The LMC4282 CMRR of 82 dB maintains integral
linearity of a 12-bit data acquisition system to ±0.325 LSB. Other rail-to-rail input amplifiers with only 50 dB of
CMRR will degrade the accuracy of the data acquisition system to only 8 bits.
NOTE: Operating from the same supply voltage, the LMC6482 buffers the ADC12038 maintaining excellent accuracy.
Figure 56. Buffering the ADC12038 With the LMC6482
20
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Application Information (continued)
8.1.3 Instrumentation Circuits
The LMC6482 has the high input impedance, large common-mode range and high CMRR needed for designing
instrumentation circuits. Instrumentation circuits designed with the LMC6482 can reject a larger range of
common-mode signals than most in-amps. This makes instrumentation circuits designed with the LMC6482 an
excellent choice of noisy or industrial environments. Other applications that benefit from these features include
analytic medical instruments, magnetic field detectors, gas detectors, and silicon-based transducers.
A small valued potentiometer is used in series with Rg to set the differential gain of the 3-op-amp instrumentation
circuit in Figure 57. This combination is used instead of one large valued potentiometer to increase gain trim
accuracy and reduce error due to vibration.
Figure 57. Low-Power, Three-Op-Amp Instrumentation Amplifier
A two-op-amp instrumentation amplifier designed for a gain of 100 is shown in Figure 58. Low sensitivity
trimming is made for offset voltage, CMRR, and gain. Low cost and low power consumption are the main
advantages of this two-op-amp circuit.
Higher frequency and larger common-mode range applications are best facilitated by a three-op-amp
instrumentation amplifier.
Figure 58. Low-Power, Two-Op-Amp Instrumentation Amplifier
8.1.4 Spice Macromodel
A
•
•
•
•
•
spice macromodel is available for the LMC6482. This model includes accurate simulation of the following:
Input common-mode voltage range
Frequency and transient response
GBW dependence on loading conditions
Quiescent and dynamic supply current
Output swing dependence on loading conditions
Many more characteristics are listed on the macromodel disk.
Contact your local TI sales office to obtain an operational amplifier spice model library disk.
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8.2 Typical Applications
8.2.1 3-V Single-Supply Buffer Circuit
Figure 59. 3-V Single-Supply Buffer Circuit
8.2.1.1 Design Requirements
For best performance, make sure that the input voltage swing is between V+ and V–.
Also, make certain that the input does not exceed the common-mode input range.
To reduce the risk of destabilizing the output, use resistive isolation on the output when driving capacitive loads
(see the Detailed Design Procedure section).
When large feedback resistors are used, compensation for parasitic capacitance on the input may be necessary.
See the Detailed Design Procedure section.
8.2.1.2 Detailed Design Procedure
8.2.1.2.1 Capacitive Load Compensation
Capacitive load compensation can be accomplished using resistive isolation as shown in Figure 60. This simple
technique is useful for isolating the capacitive inputs of multiplexers and A/D converters.
Figure 60. Resistive Isolation of a 330-pF Capacitive Load
Figure 61. Pulse Response of the LMC6482 Circuit in Figure 60
22
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Typical Applications (continued)
8.2.1.2.2 Capacitive Load Tolerance
The LMC6482 can typically directly drive a 100-pF load with VS = 15 V at unity gain without oscillating. The unity
gain follower is the most sensitive configuration. Direct capacitive loading reduces the phase margin of op-amps.
The combination of the output impedance of the op-amp and the capacitive load induces phase lag. This results
in either an underdamped pulse response or oscillation.
Improved frequency response is achieved by indirectly driving capacitive loads, as shown in Figure 62.
NOTE: Compensated to handle a 330-pF capacitive load.
Figure 62. LMC6482 Noninverting Amplifier
R1 and C1 serve to counteract the loss of phase margin by feeding forward the high-frequency component of the
output signal back to the amplifiers inverting input, thereby preserving phase margin in the overall feedback loop.
The values of R1 and C1 are experimentally determined for the desired pulse response. The resulting pulse
response is shown in Figure 63.
Figure 63. Pulse Response of
Lmc6482 Circuit in Figure 62
8.2.1.2.3 Compensating For Input Capacitance
It is quite common to use large values of feedback resistance with amplifiers that have ultra-low input current,
like the LMC6482. Large feedback resistors can react with small values of input capacitance due to transducers,
photo diodes, and circuits board parasitics to reduce phase margins.
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Typical Applications (continued)
Figure 64. Canceling the Effect of Input Capacitance
The effect of input capacitance can be compensated for by adding a feedback capacitor. The feedback capacitor
(as in Figure 64), Cf, is first estimated by:
(1)
or
R1 CIN ≤ R2 Cf
(2)
which typically provides significant overcompensation.
Printed-circuit-board stray capacitance may be larger or smaller than that of a bread-board, so the actual
optimum value for Cf may be different. The values of Cf should be checked on the actual circuit. (Refer to the
LMC660 quad CMOS amplifier data sheet for a more detailed discussion.)
8.2.1.2.4 Offset Voltage Adjustment
Offset voltage adjustment circuits are illustrated in Figure 65 and Figure 66. Large value resistances and
potentiometers are used to reduce power consumption while providing typically ±2.5 mV of adjustment range,
referred to the input, for both configurations with VS = ±5 V.
V+
R4
R3
500 k:
5V
-
VIN
1
LMC6482
2
1 M:
VOUT
+
1 k:
-5V
499:
500 k:
VOUT
V-
VIN
=-
R4
R3
V-
Figure 65. Inverting Configuration Offset Voltage Adjustment
Figure 66. Noninverting Configuration Offset Voltage Adjustment
24
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Typical Applications (continued)
8.2.1.3 Application Curves
Figure 68. Rail-To-Rail Output
Figure 67. Rail-To-Rail Input
8.2.2 Typical Single-Supply Applications
The circuit in Figure 69 uses a single supply to half-wave rectify a sinusoid centered about ground. RI limits
current into the amplifier caused by the input voltage exceeding the supply voltage. Full-wave rectification is
provided by the circuit in Figure 71.
Figure 69. Half-Wave Rectifier With Input Current
Protection (RI)
Figure 70. Half-Wave Rectifier Waveform
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Typical Applications (continued)
In Figure 75 dielectric absorption and leakage is minimized by using a polystyrene or polyethylene hold
capacitor. The droop rate is primarily determined by the value of CH and diode leakage current. The ultra-low
input current of the LMC6482 has a negligible effect on droop.
Figure 71. Full-Wave Rectifier With Input Current
Protection (RI)
Figure 72. Full-Wave Rectifier Waveform
Figure 73. Large Compliance Range Current
Source
Figure 74. Positive Supply Current Sense
Figure 75. Low-Voltage Peak Detector With Rail-To-Rail Peak Capture Range
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Typical Applications (continued)
The high CMRR (82 dB) of the LMC6482 allows excellent accuracy throughout the rail-to-rail dynamic capture
range of the circuit.
Figure 76. Rail-To-Rail Sample and Hold
The low-pass filter circuit in Figure 77 can be used as an antialiasing filter with the same voltage supply as the
A/D converter.
Filter designs can also take advantage of the LMC6482 ultra-low input current. The ultra-low input current yields
negligible offset error even when large value resistors are used. This in turn allows the use of smaller valued
capacitors that take less board space and cost less.
Figure 77. Rail-To-Rail Single Supply Low Pass Filter
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9 Power Supply Recommendations
The LMC6482 can be operated over a supply range of 3 V to 15 V. To achieve noise immunity as appropriate to
the application, make sure to use good PCB layout practices for power supply rails and planes, as well as using
bypass capacitors connected between the power supply pins and ground.
10 Layout
10.1 Layout Guidelines
It is generally recognized that any circuit that must operate with less than 1000 pA of leakage current requires
special layout of the PC board. To take advantage of the ultra-low input current of the LMC6482, typically less
than 20 fA, an excellent layout is essential. Fortunately, the techniques of obtaining low leakages are quite
simple. First, do not ignore the surface leakage of the PCB, Even through the leakage current may sometimes
appear acceptably low, because under conditions of high humidity or dust or contamination, the surface leakage
will be appreciable.
To minimize the effect of any surface leakage, lay out a ring of foil completely surrounding the LM6482s inputs
and the terminals of capacitors, diodes, conductors, resistors, relay terminals, and so forth connected to the
inputs of the op amp, as in Figure 78. To have a significant effect, place guard rings on both the top and bottom
of the PCB. This PC foil must then be connected to a voltage that is at the same voltage as the amplifier inputs,
because no leakage current can flow between two points at the same potential. For example, a PCB trace-to-pad
resistance of 1012 Ω, which is normally considered a very large resistance, could leak 5 pA if the trace were a 5V bus adjacent to the pad of the input. This leakage would cause a 250 times degradation from the actual
performance of the LMC6482. However, if a guard ring is held within 5 mV of the inputs, then even a resistance
of 1011 Ω causes only 0.05 pA of leakage current. See Figure 79 through Figure 81 for typical connections of
guard rings for standard op-amp configurations.
Be aware that when it is inappropriate to lay out a PCB for the sake of just a few circuits, another technique is
even better than a guard ring on a PCB: Do not insert the input pin of the amplifier into the PCB at all, but bend it
up in the air, and use only air as an insulator. Air is an excellent insulator. In this case you may have to forego
some of the advantages of PCB construction, but the advantages are sometimes well worth the effort of using
point-to-point up-in-the-air wiring. See Figure 82.
10.2 Layout Example
Figure 78. Example of Guard Ring in PCB Layout Typical Connections of Guard Rings
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Layout Example (continued)
Figure 79. Inverting Amplifier Typical Connections of Guard Rings
Figure 80. Noninverting Amplifier Typical Connections of Guard Rings
Figure 81. Follower Typical Connections of Guard Rings
NOTE: Input pins are lifted out of PCB and soldered directly to components. All other pins connected to PCB.
Figure 82. Air Wiring
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11 Device and Documentation Support
11.1 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
11.2 Support Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
11.3 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
11.4 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
11.5 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
30
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PACKAGE OPTION ADDENDUM
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PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
LMC6482AIM
NRND
SOIC
D
8
95
Non-RoHS
& Green
Call TI
Level-1-235C-UNLIM
-40 to 85
LMC64
82AIM
LMC6482AIM/NOPB
ACTIVE
SOIC
D
8
95
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
LMC64
82AIM
LMC6482AIMX
NRND
SOIC
D
8
2500
Non-RoHS
& Green
Call TI
Level-1-235C-UNLIM
-40 to 85
LMC64
82AIM
LMC6482AIMX/NOPB
ACTIVE
SOIC
D
8
2500
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
LMC64
82AIM
Samples
LMC6482AIN/NOPB
ACTIVE
PDIP
P
8
40
RoHS & Green
NIPDAU
Level-1-NA-UNLIM
-40 to 85
LMC64
82AIN
Samples
LMC6482IM
NRND
SOIC
D
8
95
Non-RoHS
& Green
Call TI
Level-1-235C-UNLIM
-40 to 85
LMC64
82IM
LMC6482IM/NOPB
ACTIVE
SOIC
D
8
95
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
LMC64
82IM
LMC6482IMM
NRND
VSSOP
DGK
8
1000
Non-RoHS
& Green
Call TI
Level-1-260C-UNLIM
-40 to 85
A10
LMC6482IMM/NOPB
ACTIVE
VSSOP
DGK
8
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
A10
LMC6482IMMX
NRND
VSSOP
DGK
8
3500
Non-RoHS
& Green
Call TI
Level-1-260C-UNLIM
-40 to 85
A10
LMC6482IMMX/NOPB
ACTIVE
VSSOP
DGK
8
3500
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
A10
LMC6482IMX
NRND
SOIC
D
8
2500
Non-RoHS
& Green
Call TI
Level-1-235C-UNLIM
-40 to 85
LMC64
82IM
LMC6482IMX/NOPB
ACTIVE
SOIC
D
8
2500
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
LMC64
82IM
Samples
LMC6482IN/NOPB
ACTIVE
PDIP
P
8
40
RoHS & Green
NIPDAU
Level-1-NA-UNLIM
-40 to 85
LMC6482IN
Samples
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
Addendum-Page 1
Samples
Samples
Samples
Samples
PACKAGE OPTION ADDENDUM
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19-Aug-2022
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of