LME49721
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SNAS371C – SEPTEMBER 2007 – REVISED APRIL 2013
LME49721 High-Performance, High-Fidelity Rail-to-Rail Input/Output Audio Operational
Amplifier
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FEATURES
DESCRIPTION
•
•
The LME49721 is a low-distortion, low-noise Rail-toRail Input/Output operational amplifier optimized and
fully specified for high-performance, high-fidelity
applications. Combining advanced leading-edge
process technology with state-of-the-art circuit
design, the LME49721 Rail-to-Rail Input/Output
operational amplifier delivers superior signal
amplification for outstanding performance. The
LME49721 combines a very high slew rate with low
THD+N to easily satisfy demanding applications. To
ensure that the most challenging loads are driven
without compromise, the LME49721 has a high slew
rate of ±8.5V/μs and an output current capability of
±9.7mA. Further, dynamic range is maximized by an
output stage that drives 10kΩ loads to within 10mV of
either power supply voltage.
1
2
•
•
Rail-to-Rail Input and Output
Easily Drives 10kΩ Loads to Within 10mV of
Each Power Supply Voltage
Optimized for Superior Audio Signal Fidelity
Output Short Circuit Protection
APPLICATIONS
•
•
•
•
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•
•
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Ultra High-Quality Portable Audio
Amplification
High-Fidelity Preamplifiers
High-Fidelity Multimedia
State-of-the-Art Phono Pre Amps
High-Performance Professional Audio
High-Fidelity Equalization and Crossover
Networks
High-Performance Line Drivers
High-Performance Line Receivers
High-Fidelity Active Filters
DAC I–V Converter
ADC Front-End Signal Conditioning
The LME49721 has a wide supply range of 2.2V to
5.5V. Over this supply range the LME49721’s input
circuitry maintains excellent common-mode and
power supply rejection, as well as maintaining its low
input bias current. The LME49721 is unity gain
stable.
KEY SPECIFICATIONS
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Power Supply Voltage Range: 2.2V to 5.5V
Quiescent Current: 2.15mA (typ)
THD+N (AV = 2, VOUT = 4Vp-p, f IN = 1kHz)
– RL = 2kΩ: 0.00008% (typ)
– RL = 600Ω: 0.0001% (typ)
Input Noise Density: 4nV/√Hz (typ), @ 1kHz
Slew Rate: ±8.5V/μs (typ)
Gain Bandwidth Product: 20MHz (typ)
Open Loop Gain (RL = 600Ω): 118dB (typ)
Input Bias Current: 40fA (typ)
Input Offset Voltage: 0.3mV (typ)
PSRR: 103dB (typ)
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2007–2013, Texas Instruments Incorporated
LME49721
SNAS371C – SEPTEMBER 2007 – REVISED APRIL 2013
www.ti.com
TYPICAL CONNECTION AND PINOUT
OUTPUTA
VDD
INVERTING INPUT A
-
1
8
2
7
+
-
VIN
NON-INVERTING INPUT A
+
VSS
VSS
Figure 1. Buffer Amplifier
VDD
OUTPUTB
+
-
+5V
3
6
4
5
INVERTING INPUT B
NON-INVERTING INPUT B
Figure 2. 8-Pin SOIC (D Package)
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ABSOLUTE MAXIMUM RATINGS (1) (2) (3)
Power Supply Voltage (VS = V+ - V-)
6V
−65°C to 150°C
Storage Temperature
Input Voltage
(V-) - 0.7V to (V+) + 0.7V
Output Short Circuit (4)
Continuous
Power Dissipation
Internally Limited
ESD Rating (5)
2000V
ESD Rating (6)
200V
Junction Temperature
150°C
Thermal Resistance, θJA (SOIC)
165°C/W
Temperature Range, TMIN ≤ TA ≤ TMAX
–40°C ≤ TA ≤ 85°C
2.2V ≤ VS ≤ 5.5V
Supply Voltage Range
(1)
(2)
(3)
(4)
(5)
(6)
2
“Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur, including inoperability and degradation of
device reliability and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or
other conditions beyond those indicated in the Recommended Operating Conditions is not implied. The Recommended Operating
Conditions indicate conditions at which the device is functional and the device should not be operated beyond such conditions. All
voltages are measured with respect to the ground pin, unless otherwise specified
The Electrical Characteristics table lists ensured specifications under the listed Recommended Operating Conditions except as
otherwise modified or specified by the Electrical Characteristics Conditions and/or Notes. Typical specifications are estimations only and
are not ensured.
If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and
specifications.
The maximum power dissipation must be derated at elevated temperatures and is dictated by TJMAX, θJA, and the ambient temperature,
TA. The maximum allowable power dissipation is PDMAX = (TJMAX - TA) / θJA or the number given in Absolute Maximum Ratings,
whichever is lower.
Human body model, applicable std. JESD22-A114C.
Machine model, applicable std. JESD22-A115-A.
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ELECTRICAL CHARACTERISTICS FOR THE LME49721
The following specifications apply for the circuit shown in Figure 1. VS = 5V, RL = 10kΩ, RSOURCE = 10Ω, fIN = 1kHz, and TA =
25°C, unless otherwise specified.
Symbol
Parameter
Conditions
LME49721
Typical (1)
Limit (2)
Units
(Limits)
0.001
% (max)
Total Harmonic Distortion + Noise
AV = +1, VOUT = 2Vp-p,
RL = 2kΩ
RL = 600Ω
0.0002
0.0002
IMD
Intermodulation Distortion
AV = +1, VOUT = 2Vp-p,
Two-tone, 60Hz & 7kHz 4:1
0.0004
GBWP
Gain Bandwidth Product
SR
Slew Rate
AV = +1
8.5
V/μs (min)
FPBW
Full Power Bandwidth
VOUT = 1VP-P, –3dB
referenced to output magnitude
at f = 1kHz
2.2
MHz
ts
Settling time
AV = 1, 4V step
0.1% error range
800
ns
Equivalent Input Noise Voltage
fBW = 20Hz to 20kHz,
A-weighted
.707
1.13
μVP-P
(max)
Equivalent Input Noise Density
f = 1kHz
A-weighted
4
6
nV/√Hz
(max)
In
Current Noise Density
f = 10kHz
VOS
Offset Voltage
1.5
mV (max)
ΔVOS/ΔTemp
Average Input Offset Voltage Drift vs
Temperature
PSRR
Average Input Offset Voltage Shift vs
Power Supply Voltage
ISOCH-CH
Channel-to-Channel Isolation
fIN = 1kHz
117
dB
IB
Input Bias Current
VCM = VS/2
40
fA
ΔIOS/ΔTemp
Input Bias Current Drift vs
Temperature
–40°C ≤ TA ≤ 85°C
48
fA/°C
IOS
Input Offset Current
VCM = VS/2
60
THD+N
en
VIN-CM
Common-Mode Input Voltage Range
CMRR
Common-Mode Rejection
20
VSS - 100mV < VCM < VDD + 100mV
93
MHz (min)
fA/√Hz
μV/°C
1.1
103
1/f Corner Frequency
15
4.0
0.3
40°C ≤ TA ≤ 85°C
%
85
dB (min)
fA
(V+) – 0.1
(V-) + 0.1
V (min)
70
dB (min)
2000
Hz
VSS - 200mV < VOUT < VDD + 200mV
AVOL
Open Loop Voltage Gain
RL = 600Ω
118
RL = 2kΩ
122
RL = 10kΩ
130
115
dB (min)
VDD – 30mV
VDD – 80mV
V (min)
RL = 600Ω
VOUTMIN
Output Voltage Swing
RL = 10kΩ, VS = 5.0V
IOUT
Output Current
IOUT-SC
Short Circuit Current
RL = 250Ω, VS = 5.0V
ROUT
Output Impedance
fIN = 10kHz
Closed-Loop
Open-Loop
IS
Quiescent Current per Amplifier
IOUT = 0mA
(1)
(2)
100
dB (min)
dB (min)
VSS + 30mV
VSS + 80mV
V (min)
VDD – 10mV
VDD – 20mV
V (min)
VSS + 10mV
VSS + 20mV
V (min)
9.7
9.3
mA (min)
100
mA
0.01
46
Ω
2.15
3.25
mA (max)
Typical values represent most likely parametric norms at TA = +25ºC, and at the Recommended Operation Conditions at the time of
product characterization and are not ensured.
Datasheet min/max specification limits are ensured by test or statistical analysis.
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TYPICAL PERFORMANCE CHARACTERISTICS
Graphs were taken in dual supply configuration.
THD+N vs Frequency
VS = ±2.5V, VOUT = 4VP-P
RL = 2kΩ, AV = 2
0.1
0.1
0.01
0.01
THD+N (%)
THD+N (%)
THD+N vs Frequency
VS = ±2.5V, VOUT = 4VP-P
RL = 2kΩ, AV = 2, BW = 22kHz
0.001
0.0001
0.00001
20
0.001
0.0001
200
2k
0.00001
20
20k
Figure 4.
THD+N vs Frequency
VS = ±2.5V, VOUT = 4VP-P
RL = 10kΩ, AV = 2, BW = 22kHz
THD+N vs Frequency
VS = ±2.5V, VOUT = 4VP-P
RL = 10kΩ, AV = 2
0.1
0.1
0.01
0.01
0.001
0.0001
0.00001
20
0.0001
200
2k
0.00001
20
20k
Figure 6.
THD+N vs Frequency
VS = ±2.5V, VOUT = 4VP-P
RL = 600Ω, AV = 2, BW = 22kHz
THD+N vs Frequency
VS = ±2.5V, VOUT = 4VP-P
RL = 600Ω, AV = 2
0.1
0.1
0.01
0.01
THD+N (%)
THD+N (%)
200
2k
FREQUENCY (Hz)
Figure 5.
0.001
0.0001
20k
0.001
0.0001
200
2k
FREQUENCY (Hz)
20k
0.00001
20
Figure 7.
4
20k
0.001
FREQUENCY (Hz)
0.00001
20
200
2k
FREQUENCY (Hz)
Figure 3.
THD+N (%)
THD+N (%)
FREQUENCY (Hz)
200
2k
FREQUENCY (Hz)
20k
Figure 8.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Graphs were taken in dual supply configuration.
THD+N vs Frequency
VS = ±2.75V, VOUT = 4VP-P
RL = 2kΩ, AV = 2, BW = 22kHz
THD+N vs Frequency
VS = ±2.75V, VOUT = 4VP-P
RL = 2kΩ, AV = 2
0.01
0.01
THD+N (%)
0.1
THD+N (%)
0.1
0.001
0.0001
20
0.001
200
2k
0.0001
20
20k
FREQUENCY (Hz)
Figure 9.
Figure 10.
THD+N vs Frequency
VS = ±2.75V, VOUT = 4VP-P
RL = 10kΩ, AV = 2, BW = 22kHz
THD+N vs Frequency
VS = ±2.75V, VOUT = 4VP-P
RL = 10kΩ, AV = 2
0.01
0.01
THD+N (%)
0.1
THD+N (%)
0.1
200
2k
0.0001
20
20k
2k
Figure 11.
Figure 12.
THD+N vs Frequency
VS = ±2.75V, VOUT = 4VP-P
RL = 600Ω, AV = 2, BW = 22kHz
THD+N vs Frequency
VS = ±2.75V, VOUT = 4VP-P
RL = 600Ω, AV = 2
0.1
0.1
0.01
0.01
THD+N (%)
THD+N (%)
200
20k
FREQUENCY (Hz)
FREQUENCY (Hz)
0.001
0.001
0.0001
0.0001
0.00001
20
20k
0.001
0.001
0.0001
20
200
2k
FREQUENCY (Hz)
200
2k
20k
0.00001
20
200
2k
20k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 13.
Figure 14.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Graphs were taken in dual supply configuration.
THD+N vs Output Voltage
VS = ±1.1V
RL = 2kΩ, AV = 2
THD+N vs Output Voltage
VS = ±1.1V
RL = 10kΩ, AV = 2
0.10
0.01
0.01
THD+N (%)
THD+N (%)
0.10
0.001
0.0001
100m
0.001
0.0001
100m
1
200m
1
200m
OUTPUT VOLTAGE (V)
OUTPUT VOLTAGE (V)
Figure 15.
Figure 16.
THD+N vs Output Voltage
VS = ±1.1V
RL = 600Ω, AV = 2
THD+N vs Output Voltage
VS = ±1.5V
RL = 2kΩ, AV = 2
0.1
0.10
0.01
THD+N (%)
THD+N (%)
0.01
0.001
0.001
0.0001
0.0001
100m
0.00001
100m
1
200m
Figure 18.
THD+N vs Output Voltage
VS = ±1.5V
RL = 10kΩ, AV = 2
THD+N vs Output Voltage
VS = ±1.5V
RL = 600Ω, AV = 2
0.1
0.01
0.01
0.001
0.001
0.0001
0.0001
200M
1
2
0.00001
100m
200m
1
2
OUTPUT VOLTAGE (V)
OUTPUT VOLTAGE (V)
Figure 19.
6
2
OUTPUT VOLTAGE (V)
0.1
0.00001
100M
1
Figure 17.
THD+N (%)
THD+N (%)
OUTPUT VOLTAGE (V)
200m
Figure 20.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Graphs were taken in dual supply configuration.
THD+N vs Output Voltage
VS = ±2.5V
RL = 10kΩ, AV = 2
0.1
0.1
0.01
0.01
THD+N (%)
THD+N (%)
THD+N vs Output Voltage
VS = ±2.5V
RL = 2kΩ, AV = 2
0.001
0.001
0.0001
0.00001
100m
0.0001
200m
1
0.00001
100m
2
Figure 22.
THD+N vs Output Voltage
VS = ±2.5V
RL = 600Ω, AV = 2
THD+N vs Output Voltage
VS = ±2.75V
RL = 2kΩ, AV = 2
0.1
0.01
0.01
0.001
0.001
0.0001
0.0001
200m
1
0.00001
100m
2
200m
1
2
3
2
3
OUTPUT VOLTAGE (V)
Figure 23.
Figure 24.
THD+N vs Output Voltage
VS = ±2.75V
RL = 10kΩ, AV = 2
THD+N vs Output Voltage
VS = ±2.75V
RL = 600Ω, AV = 2
0.1
0.1
0.01
0.01
THD+N (%)
THD+N (%)
OUTPUT VOLTAGE (V)
0.001
0.0001
0.00001
100m
2
OUTPUT VOLTAGE (V)
0.1
0.00001
100m
1
Figure 21.
THD+N (%)
THD+N (%)
OUTPUT VOLTAGE (V)
200m
0.001
0.0001
200m
1
2
3
0.00001
100m
OUTPUT VOLTAGE (V)
200m
1
OUTPUT VOLTAGE (V)
Figure 25.
Figure 26.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Graphs were taken in dual supply configuration.
+0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
-110
-120
-130
-140
-150
20
Crosstalk vs Frequency
VS = ±1.1V
VOUT = 2Vp-p
RL = 10kΩ
CROSSTALK (dB)
CROSSTALK (dB)
Crosstalk vs Frequency
VS = ±1.1V
VOUT = 2Vp-p
RL = 2kΩ
100 200
1k 2k
10k 20k
+0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
-110
-120
-130
-140
-150
20
+0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
-110
-120
-130
-140
-150
20
Crosstalk vs Frequency
VS = ±1.1V
VOUT = 2Vp-p
RL = 600Ω
Crosstalk vs Frequency
VS = ±1.5V,
VOUT = 2Vp-p
RL = 2kΩ
100 200
1k 2k
10k 20k
+0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
-110
-120
-130
-140
-150
20
100 200
1k 2k
Figure 29.
Figure 30.
Crosstalk vs Frequency
VS = ±1.5V
VOUT = 2Vp-p
RL = 10kΩ
Crosstalk vs Frequency
VS = ±1.5V
VOUT = 2Vp-p
RL = 600Ω
100 200
1k 2k
10k 20k
FREQUENCY (Hz)
CROSSTALK (dB)
CROSSTALK (dB)
8
10k 20k
Figure 28.
FREQUENCY (Hz)
+0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
-110
-120
-130
-140
-150
20
100 200
1k 2k
FREQUENCY (Hz)
Figure 27.
CROSSTALK (dB)
CROSSTALK (dB)
FREQUENCY (Hz)
10k 20k
+0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
-110
-120
-130
-140
-150
20
100 200
1k 2k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 31.
Figure 32.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
+0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
-110
-120
-130
-140
-150
20
+0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
-110
-120
-130
-140
-150
20
CROSSTALK (dB)
100 200
1k 2k
10k 20k
+0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
-110
-120
-130
-140
-150
20
Crosstalk vs Frequency
VS = ±2.5V
VOUT = 4Vp-p
RL = 10kΩ
100 200
1k 2k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 33.
Figure 34.
Crosstalk vs Frequency
VS = ±2.5V
VOUT = 4Vp-p
RL = 600Ω
Crosstalk vs Frequency
VS = ±2.75V
VOUT = 4Vp-p
RL = 2kΩ
CROSSTALK (dB)
+0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
-110
-120
-130
-140
-150
20
Crosstalk vs Frequency
VS = ±2.5V
VOUT = 4Vp-p
RL = 2kΩ
100 200
1k 2k
10k 20k
+0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
-110
-120
-130
-140
-150
20
100 200
1k 2k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 35.
Figure 36.
Crosstalk vs Frequency
VS = ±2.75V
VOUT = 4Vp-p
RL = 10kΩ
Crosstalk vs Frequency
VS = ±2.75V
VOUT = 4Vp-p
RL = 600Ω
CROSSTALK (dB)
CROSSTALK (dB)
CROSSTALK (dB)
CROSSTALK (dB)
Graphs were taken in dual supply configuration.
100 200
1k 2k
10k 20k
+0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
-110
-120
-130
-140
-150
20
100 200
1k 2k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 37.
Figure 38.
10k 20k
10k 20k
10k 20k
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Graphs were taken in dual supply configuration.
PSRR vs Frequency
VS = ±1.1V
VRIPPLE = 200mVP-P
RL = 2kΩ
0
-20
-20
-40
-40
PSRR (dB)
PSRR (dB)
0
-60
-80
-60
-80
-100
-100
-120
-120
-140
10
PSRR vs Frequency
VS = ±1.1V
VRIPPLE = 200mVP-P
RL = 10kΩ
-140
100
1000
10000
100000
10
FREQUENCY (Hz)
PSRR vs Frequency
VS = ±1.1V
VRIPPLE = 200mVP-P
RL = 600Ω
PSRR vs Frequency
VS = ±1.5V
VRIPPLE = 200mVP-P
RL = 2kΩ
0
-40
-40
-60
-80
-80
-100
-120
-120
-140
100
1000
10000
10
100000
100
1000
10000
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 41.
Figure 42.
PSRR vs Frequency
VS = ±1.5V
VRIPPLE = 200mVP-P
RL = 10kΩ
PSRR vs Frequency
VS = ±1.5V
VRIPPLE = 200mVP-P
RL = 600Ω
0
-20
-20
-40
-40
-60
-80
100000
-60
-80
-100
-100
-120
-120
-140
-140
10
100
1000
10000
100000
FREQUENCY (Hz)
10
100
1000
10000
100000
FREQUENCY (Hz)
Figure 43.
10
100000
-60
-100
PSRR (dB)
PSRR (dB)
Figure 40.
-20
0
10000
FREQUENCY (Hz)
-20
-140
10
1000
Figure 39.
PSRR (dB)
PSRR (dB)
0
100
Figure 44.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Graphs were taken in dual supply configuration.
PSRR vs Frequency
VS = ±2.5V
VRIPPLE = 200mVP-P
RL = 2kΩ
0
-20
-20
-40
-40
PSRR (dB)
PSRR (dB)
0
-60
-80
-60
-80
-100
-100
-120
-120
-140
-140
10
0
100
1000
10000
10
100000
1000
10000
FREQUENCY (Hz)
Figure 45.
Figure 46.
PSRR vs Frequency
VS = ±2.5V
VRIPPLE = 200mVP-P
RL = 600Ω
PSRR vs Frequency
VS = ±2.75V
VRIPPLE = 200mVP-P
RL = 2kΩ
0
-20
-20
-40
-40
-60
-80
100000
-60
-80
-100
-100
-120
-120
-140
-140
10
100
1000
10000
10
100000
FREQUENCY (Hz)
0
100
1000
10000
100000
FREQUENCY (Hz)
Figure 47.
Figure 48.
PSRR vs Frequency
VS = ±2.75V
VRIPPLE = 200mVP-P
RL = 10kΩ
PSRR vs Frequency
VS = ±2.75V
VRIPPLE = 200mVP-P
RL = 600Ω
0
-20
-20
-40
-40
PSRR (dB)
PSRR (dB)
100
FREQUENCY (Hz)
PSRR (dB)
PSRR (dB)
PSRR vs Frequency
VS = ±2.5V
VRIPPLE = 200mVP-P
RL = 10kΩ
-60
-80
-60
-80
-100
-100
-120
-120
-140
-140
10
100
1000
10000
100000
10
100
1000
10000
100000
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 49.
Figure 50.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Graphs were taken in dual supply configuration.
CMRR vs Frequency
VS = ±1.5V
RL = 10kΩ
+0
+0
-20
-20
-40
-40
CMRR (dB)
CMRR (dB)
CMRR vs Frequency
VS = ±1.5V
RL = 2kΩ
-60
-80
-80
-100
-100
-120
-120
200
2k
20k
200k
20
2k
20k
FREQUENCY (Hz)
Figure 51.
Figure 52.
CMRR vs Frequency
VS = ±1.5V
RL = 600Ω
CMRR vs Frequency
VS = ±2.5V
RL = 2kΩ
+0
+0
-20
-20
-40
-40
-60
200k
-60
-80
-80
-100
-100
-120
-120
20
200
2k
20k
200k
20
200
2k
20k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 53.
Figure 54.
CMRR vs Frequency
VS = ±2.5V
RL = 10kΩ
CMRR vs Frequency
VS = ±2.5V
RL = 600Ω
+0
+0
-20
-20
-40
-40
CMRR (dB)
CMRR (dB)
200
FREQUENCY (Hz)
CMRR (dB)
CMRR (dB)
20
-60
200k
-60
-80
-80
-100
-100
-120
-120
20
12
-60
200
2k
20k
200k
20
200
2k
20k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 55.
Figure 56.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Graphs were taken in dual supply configuration.
CMRR vs Frequency
VS = ±2.75V
RL = 10kΩ
+0
+0
-20
-20
-40
-40
CMRR (dB)
CMRR (dB)
CMRR vs Frequency
VS = ±2.75V
RL = 2kΩ
-60
-60
-80
-80
-100
-100
-120
-120
20
200
2k
20k
200k
20
20k
200k
FREQUENCY (Hz)
Figure 57.
Figure 58.
CMRR vs Frequency
VS = ±2.75V
RL = 600Ω
Output Voltage Swing Neg vs Power Supply
RL = 2kΩ
0.0
OUTPUT VOLTAGE SWING (V)
-20
-40
CMRR (dB)
2k
FREQUENCY (Hz)
+0
-60
-80
-100
-120
20
200
2k
20k
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 2.7 2.9
200k
FREQUENCY (Hz)
SUPPLY VOLTAGE (V-)
Figure 59.
Figure 60.
Output Voltage Swing Neg vs Power Supply
RL = 10kΩ
Output Voltage Swing Neg vs Power Supply
RL = 600Ω
0.0
OUTPUT VOLTAGE SWING (V)
0.0
OUTPUT VOLTAGE SWING (V)
200
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 2.7 2.9
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 2.7 2.9
SUPPLY VOLTAGE (V-)
SUPPLY VOLTAGE (V-)
Figure 61.
Figure 62.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Graphs were taken in dual supply configuration.
Output Voltage Swing Pos vs Power Supply
RL = 2kΩ
Output Voltage Swing Pos vs Power Supply
RL = 10kΩ
3.0
OUTPUT VOLTAGE SWING (V)
OUTPUT VOLTAGE SWING (V)
3.0
2.5
2.0
1.5
1.0
0.5
2.5
2.0
1.5
1.0
0.5
0.0
1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 2.7 2.9
0.0
1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 2.7 2.9
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
Figure 63.
Figure 64.
Output Voltage Swing Pos vs Power Supply
RL = 600Ω
Supply Current per amplifier vs Power Supply
RL = 2kΩ, Dual Supply
3.5
3.0
2.5
SUPPLY CURRENT (mA)
OUTPUT VOLTAGE SWING (V)
3.0
2.0
1.5
1.0
2.5
2.0
1.5
1.0
0.5
0.5
0.0
1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 2.7 2.9
0.0
1.10 1.25 1.50 1.75 2.00 2.25 2.50 2.75
POWER SUPPLY (V)
SUPPLY VOLTAGE (V)
Figure 65.
Figure 66.
Supply Current per amplifier vs Power Supply
RL = 10kΩ, Dual Supply
Supply Current per amplifier vs Power Supply
RL = 600Ω, Dual Supply
3.5
8.0
7.0
SUPPLY CURRENT (mA)
SUPPLY CURRENT (mA)
3.0
2.5
2.0
1.5
1.0
5.0
4.0
3.0
2.0
0.5
1.0
0.0
1.10 1.25 1.50 1.75 2.00 2.25 2.50 2.75
0.0
1.10 1.25 1.50 1.75 2.00 2.25 2.50 2.75
POWER SUPPLY (V)
POWER SUPPLY (V)
Figure 67.
14
6.0
Figure 68.
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APPLICATION INFORMATION
DISTORTION MEASUREMENTS
The vanishingly low residual distortion produced by LME49721 is below the capabilities of all commercially
available equipment. This makes distortion measurements just slightly more difficult than simply connecting a
distortion meter to the amplifier's inputs and outputs. The solution. however, is quite simple: an additional
resistor. Adding this resistor extends the resolution of the distortion measurement equipment.
The LME49721's low residual is an input referred internal error. As shown in Figure 69, adding the 10Ω resistor
connected between a the amplifier's inverting and non-inverting inputs changes the amplifier's noise gain. The
result is that the error signal (distortion) is amplified by a factor of 101. Although the amplifier's closed-loop gain
is unaltered, the feedback available to correct distortion errors is reduced by 101. To ensure minimum effects on
distortion measurements, keep the value of R1 low as shown in Figure 69.
This technique is verified by duplicating the measurements with high closed-loop gain and/or making the
measurements at high frequencies. Doing so, produces distortion components that are within equipments
capabilities. This datasheet's THD+N and IMD values were generated using the above described circuit
connected to an Audio Precision System Two Cascade.
R2
1 k:
R1
1 k:
R3
10:
LME49721
+
Generator Output
Distortion Signal Gain = 1 + (R2/R3)
Analyzer Input
Audio Precision
System Two
Cascade
Figure 69. THD+N and IMD Distortion Test Circuit with AV = 2
OPERATING RATINGS AND BASIC DESIGN GUIDELINES
The LME49721 has a supply voltage range from +2.2V to +5.5V single supply or ±1.1 to ±2.75V dual supply.
Bypassed capacitors for the supplies should be placed as close to the amplifier as possible. This will help
minimize any inductance between the power supply and the supply pins. In addition to a 10μF capacitor, a 0.1μF
capacitor is also recommended in CMOS amplifiers.
The amplifier's inputs lead lengths should also be as short as possible. If the op amp does not have a bypass
capacitor, it may oscillate.
BASIC AMPLIFIER CONFIGURATIONS
The LME49721 may be operated with either a single supply or dual supplies. Figure 70 shows the typical
connection for a single supply inverting amplifier. The output voltage for a single supply amplifier will be centered
around the common-mode voltage Vcm. Note: the voltage applied to the Vcm insures the output stays above
ground. Typically, the Vcm should be equal to VDD/2. This is done by putting a resistor divider ckt at this node,
see Figure 70.
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R1
VIN
R2
VDD
VDD
R3
VOUT
VCM
+
R4
Figure 70. Single-Supply Inverting Op Amp
Figure 71 shows the typical connection for a dual supply inverting amplifier. The output voltage is centered on
zero.
VIN
R2
R1
VDD
-
VOUT
+
VSS
Figure 71. Dual-Supply Inverting Op Amp
Figure 72 shows the typical connection for the Buffer Amplifier or also called a Voltage Follower. A Buffer
Amplifier can be used to solve impedance matching problems, to reduce power consumption in the source, or to
drive heavy loads. The input impedance of the op amp is very high. Therefore, the input of the op amp does not
load down the source. The output impedance on the other hand is very low. It allows the load to either supply or
absorb energy to a circuit while a secondary voltage source dissipates energy from a circuit. The Buffer is a unity
stable amplifier, 1V/V. Although the feedback loop is tied from the output of the amplifier to the inverting input,
the gain is still positive. Note: if a positive feedback is used, the amplifier will most likely drive to either rail at the
output.
VDD
-
VOUT
VIN
+
Figure 72. Buffer
16
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TYPICAL APPLICATIONS
AV = 34.5
F = 1 kHz
En = 0.38 μV
A Weighted
Figure 73. ANAB Preamp
Figure 74. NAB Preamp Voltage Gain vs Frequency
VO = V1–V2
Figure 75. Balanced to Single-Ended Converter
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VO = V1 + V2 − V3 − V4
Figure 76. Adder/Subtracter
Figure 77. Sine Wave Oscillator
Illustration is f0 = 1 kHz
Figure 78. Second-Order High-Pass Filter
(Butterworth)
18
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Illustration is f0 = 1 kHz
Figure 79. Second-Order Low-Pass Filter
(Butterworth)
Illustration is f0 = 1 kHz, Q = 10, ABP = 1
Figure 80. State Variable Filter
Figure 81. AC/DC Converter
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Figure 82. 2-Channel Panning Circuit (Pan Pot)
Figure 83. Line Driver
20
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Illustration is:
fL = 32 Hz, fLB = 320 Hz
fH =11 kHz, fHB = 1.1 kHz
Figure 84. Tone Control
Av = 35 dB
En = 0.33 μV
S/N = 90 dB
f = 1 kHz
A Weighted
A Weighted, VIN = 10 mV
@f = 1 kHz
Figure 85. RIAA Preamp
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Illustration is:
V0 = 101(V2 − V1)
Figure 86. Balanced Input Mic Amp
22
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A.
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See Table 1.
Figure 87. 10-Band Graphic Equalizer
Table 1. C1, C2, R1, and R2 Values for Figure 87 (1)
(1)
fo (Hz)
C1
C2
R1
R2
32
0.12μF
4.7μF
75kΩ
500Ω
64
0.056μF
3.3μF
68kΩ
510Ω
125
0.033μF
1.5μF
62kΩ
510Ω
250
0.015μF
0.82μF
68kΩ
470Ω
500
8200pF
0.39μF
62kΩ
470Ω
1k
3900pF
0.22μF
68kΩ
470Ω
2k
2000pF
0.1μF
68kΩ
470Ω
4k
1100pF
0.056μF
62kΩ
470Ω
8k
510pF
0.022μF
68kΩ
510Ω
16k
330pF
0.012μF
51kΩ
510Ω
At volume of change = ±12 dB Q = 1.7
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REVISION HISTORY
24
Rev
Date
1.0
09/26/07
Description
Initial release.
1.1
10/01/07
Input more info under the Buffer Amplifier.
1.2
04/21/10
Added the Ordering Information table.
C
04/04/13
Changed layout of National Data Sheet to TI format.
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PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
LME49721MA/NOPB
ACTIVE
SOIC
D
8
95
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
L49721
MA
LME49721MAX/NOPB
ACTIVE
SOIC
D
8
2500
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
L49721
MA
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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