LME49743MT/NOPB

LME49743 www.ti.com SNAS442B – MARCH 2008 – REVISED APRIL 2013 LME49743 Quad High Performance, High Fidelity Audio Operational Amplifier Check for Samples: LME49743 FEATURES DESCRIPTION • • • • • The LME49743 is a low distortion, low noise, high slew rate operational amplifier optimized and fully specified for high performance, high fidelity applications. The LME49743 audio operational amplifier delivers superior audio signal amplification for outstanding audio performance. The LME49743 combines low voltage noise density (3.5nV/√Hz) and THD+N (0.0001%) to easily satisfy demanding audio applications. To ensure that the most challenging loads are driven without compromise, the LME49743 has a slew rate of ±12V/μs and an output current capability of ±21mA. 1 2 Easily Drives 600Ω Loads Optimized for Superior Audio Signal Fidelity Output Short Circuit Protection 98dB (Typ) PSRR and 106dB (Typ) CMRR TSSOP Package APPLICATIONS • • • • • Audio Amplifiers and Preamplifiers Professional Audio Equalization and Crossover Networks Line Drivers and Receivers Active Filters The LME49743's outstanding CMRR(106dB), PSRR(98dB), and VOS (±0.15mV) give the amplifier excellent operational amplifier DC performance. The LME49743 has a wide supply range of ±4.0V to ±17V. Over this supply range the LME49743’s input circuitry maintains excellent common-mode, power supply rejection, and low input bias current. The LME49743 is unity gain stable. The LME49743 is available in 14–lead TSSOP. Table 1. Key Specifications Power Supply Voltage Range VALUE UNIT ±4.0V to ±17 V RL = 2kΩ 0.0001 % (typ) RL = 600Ω 0.0001 % (typ) Input Noise Density 3.5 nV/√Hz (typ) Slew Rate ±12 V/μs (typ) Gain Bandwidth Product 30 MHz (typ) Open Loop Gain (RL = 600Ω) 110 dB (typ) Input Bias Current 190 nA (typ) Input Offset Voltage ±0.15 mV (typ) THD+N (AV = 1, VOUT = 3VRMS, fIN = 1kHz) 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. All trademarks are the property of their respective owners. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2008–2013, Texas Instruments Incorporated LME49743 SNAS442B – MARCH 2008 – REVISED APRIL 2013 www.ti.com Connection Diagram Figure 1. TSSOP Package See Package Number PW0014A These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. Absolute Maximum Ratings Power Supply Voltage (1) (2) (3) (VS = V+ - V-) 36V −65°C to 150°C Storage Temperature Input Voltage (V-) - 0.7V to (V+) + 0.7V Output Short Circuit (4) Continuous Power Dissipation Internally Limited ESD Susceptibility (5) 750V ESD Susceptibility (6) 175V Junction Temperature 150°C Thermal Resistance θJA (MT) Temperature Range TMIN ≤ TA ≤ TMAX ±4.0V ≤ VS ≤ ± 17V Supply Voltage Range (1) (2) (3) (4) (5) (6) 2 140°C/W –40°C ≤ TA ≤ 85°C Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not specify specific performance limits. For specifications and test conditions, see the Electrical Characteristics. The specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test conditions. If Military/Aerospace specifications are required, please contact the Texas Instruments Sales Office/Distributors for availability and specifications. Amplifier output connected to GND, any number of amplifiers within a package. Human body model, 100pF discharged through a 1.5kΩ resistor. Machine Model ESD test is covered by specification EIAJ IC-121-1981. A 200pF cap is charged to the specified voltage and then discharged directly into the IC with no external series resistor (resistance of discharge path must be under 50Ω). Submit Documentation Feedback Copyright © 2008–2013, Texas Instruments Incorporated Product Folder Links: LME49743 LME49743 www.ti.com SNAS442B – MARCH 2008 – REVISED APRIL 2013 Electrical Characteristics The following specifications apply for VS = ±15V, RL = 2kΩ, fIN = 1kHz, and TA = 25C, unless otherwise specified. (1) (2) LME49743 Parameter Test Conditions Typ (3) Total Harmonic Distortion + Noise AV = 1, VOUT = 3VRMS RL = 2kΩ RL = 600Ω 0.0001 0.0001 IMD Intermodulation Distortion AV = 1, VOUT = 3VRMS Two-tone, 60Hz & 7kHz 4:1 0.0005 GBWP Gain Bandwidth Product SR Slew Rate THD+N Limit (4) (5) Units (Limits) 0.0002 % (max) % (max) 30 25 MHz (min) 12 9.5 V/μs (min) FPBW Full Power Bandwidth VOUT = 1VP-P, –3dB referenced to output magnitude at f = 1kHz ts Settling time AV = 1, 10V step, CL = 100pF 0.1% error range 1.2 Equivalent Input Noise Voltage fBW = 20Hz to 20kHz 0.48 0.65 en Equivalent Input Noise Density f = 1kHz f = 10Hz 3.5 6.4 4.5 in Current Noise Density f = 1kHz f = 10Hz 1.6 3.1 VOS Offset Voltage ΔVOS/ΔTemp Average Input Offset Voltage Drift vs Temperature 40°C ≤ TA ≤ 85°C PSRR Average Input Offset Voltage Shift vs Power Supply Voltage ΔVS = 20V (6) 98 ISOCH-CH Channel-to-Channel Isolation fIN = 1kHz fIN = 20kHz 118 112 IB Input Bias Current VCM = 0V 190 ΔIOS/ΔTemp Input Bias Current Drift vs Temperature –40°C ≤ TA ≤ 85°C 0.05 IOS Input Offset Current VCM = 0V VIN-CM Common-Mode Input Voltage Range CMRR Common-Mode Rejection Common Mode Input Impedance AVOL VOUTMAX Open Loop Voltage Gain Maximum Output Voltage Swing IOUT Output Current IOUT-CC Short Circuit Current (1) (2) (3) (4) (5) (6) ±0.15 MHz μs μVRMS nV/√Hz (max) nV/√Hz pA/√Hz pA/√Hz ±1.0 mV (max) μV/°C 0.05 94 dB (min) dB dB 250 nA (max) nA/°C 7 40 nA (max) ±13.2 (V+)–2.0 (V-)+2.0 V (min) V (min) –10V