LME49860, LME49860MABD, LME49860NABD
www.ti.com
SNAS389C – JUNE 2007 – REVISED APRIL 2013
LME49860 44V Dual High Performance, High Fidelity Audio Operational Amplifier
Check for Samples: LME49860, LME49860MABD, LME49860NABD
FEATURES
KEY SPECIFICATIONS
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1
2
Easily Drives 600Ω Loads
Optimized for Superior Audio Signal Fidelity
Output Short Circuit Protection
PSRR and CMRR Exceed 120dB (Typ)
SOIC or PDIP Packages
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APPLICATIONS
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Ultra High Quality Audio Amplification
High Fidelity Preamplifiers
High Fidelity Multimedia
State of the Art Phono Pre Amps
High Performance Professional Audio
High Fidelity Equalization and Crossover
Networks
High Performance Line Drivers
High Performance Line Receivers
High Fidelity Active Filters
Power Supply Voltage Range: ±2.5 to ±22V
THD+N (AV = 1, VOUT = 3VRMS, fIN = 1kHz)
– RL = 2kΩ: 0.00003% (Typ)
– RL = 600Ω: 0.00003% (Typ)
Input Noise Density: 2.7 nV/√Hz (Typ)
Slew Rate: ±20V/μs (Typ)
Gain Bandwidth Product: 55MHz (Typ)
Open Loop Gain (RL = 600Ω): 140dB (Typ)
Input Bias Current: 10nA (Typ)
Input Offset Voltage: 0.1mV (Typ)
DC Gain Linearity Error: 0.000009%
DESCRIPTION
The LME49860 is part of the ultra-low distortion, low
noise, high slew rate operational amplifier series
optimized and fully specified for high performance,
high fidelity applications. Combining advanced
leading-edge process technology with state-of-the-art
circuit design, the LME49860 audio operational
amplifiers deliver superior audio signal amplification
for outstanding audio performance. The LME49860
combines extremely low voltage noise density
(2.7nV/√Hz) with vanishingly low THD+N (0.00003%)
to easily satisfy the most demanding audio
applications.
TYPICAL APPLICATION
150:
3320:
150:
-
26.1 k:
+
909:
LME49860
LME49860
+
INPUT
3320:
22 nF//4.7 nF//500 pF
10 pF
47 k:
3.83 k:
+
100:
+
OUTPUT
47 nF//33 nF
Note: 1% metal film resistors, 5% polypropylene capacitors
Figure 1. Passively Equalized RIAA Phono Preamplifier
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2007–2013, Texas Instruments Incorporated
LME49860, LME49860MABD, LME49860NABD
SNAS389C – JUNE 2007 – REVISED APRIL 2013
www.ti.com
DESCRIPTION (CONTINUED)
To ensure that the most challenging loads are driven without compromise, the LME49860 has a high slew rate of
±20V/μs and an output current capability of ±26mA. Further, dynamic range is maximized by an output stage that
drives 2kΩ loads to within 1V of either power supply voltage and to within 1.4V when driving 600Ω loads.
The LME49860's outstanding CMRR (120dB), PSRR (120dB), and VOS (0.1mV) give the amplifier excellent
operational amplifier DC performance.
The LME49860 has a wide supply range of ±2.5V to ±22V. Over this supply range the LME49860 maintains
excellent common-mode rejection, power supply rejection, and low input bias current. The LME49860 is unity
gain stable. This Audio Operational Amplifier achieves outstanding AC performance while driving complex loads
with values as high as 100pF.
The LME49860 is available in 8-lead narrow body SOIC and 8-lead PDIP packages. Demonstration boards are
available for each package.
Connection Diagrams
OUTPUT A
INVERTING INPUT A
1
8 V+
2
7 OUTPUT B
A
-
NON-INVERTING
INPUT A
-
V
B
+
+
-
3
6
4
5
INVERTING INPUT B
NON-INVERTING
INPUT B
Figure 2. 8-Pin SOIC or PDIP
See D or P Package
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
2
Submit Documentation Feedback
Copyright © 2007–2013, Texas Instruments Incorporated
Product Folder Links: LME49860 LME49860MABD LME49860NABD
LME49860, LME49860MABD, LME49860NABD
www.ti.com
SNAS389C – JUNE 2007 – REVISED APRIL 2013
ABSOLUTE MAXIMUM RATINGS (1) (2) (3)
Power Supply Voltage (VS = V+ - V-)
46V
−65°C to 150°C
Storage Temperature
Input Voltage
(V-) - 0.7V to (V+) + 0.7V
Output Short Circuit (4)
ESD Susceptibility
Continuous
(5)
2000V
ESD Susceptibility (6)
Pins 1, 4, 7 and 8
200V
Pins 2, 3, 5 and 6
100V
Junction Temperature
150°C
Thermal Resistance
(1)
(2)
(3)
(4)
(5)
(6)
θJA (SOIC)
145°C/W
θJA (PDIP)
102°C/W
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.
Operating Ratings indicate conditions for which the device is functional, but do not ensure specific performance limits. For ensured
specifications and test conditions, see the Electrical Characteristics. The ensured specifications apply only for the test conditions listed.
Some performance characteristics may degrade when the device is not operated under the listed test conditions.
If Military/Aerospace specified devices are required, please contact the Texas Instrument Sales Office/ Distributors for availability and
specifications.
Amplifier output connected to GND, any number of amplifiers within a package.
Human body model, 100pF discharged through a 1.5kΩ resistor.
Machine Model ESD test is covered by specification EIAJ IC-121-1981. A 200pF cap is charged to the specified voltage and then
discharged directly into the IC with no external series resistor (resistance of discharge path must be under 50Ω).
OPERATING RATINGS
TMIN ≤ TA ≤ TMAX
Temperature Range
−40°C ≤ TA ≤ 85°C
±2.5V ≤ VS ≤ ±22V
Supply Voltage Range
ELECTRICAL CHARACTERISTICS FOR THE LME49860 (1)
The following specifications apply for VS = ±18V and ±22V, RL = 2kΩ, RSOURCE = 10Ω, fIN = 1kHz, TA = 25°C, unless otherwise
specified.
Symbol
Parameter
LME49860
Conditions
Typical (2)
RL = 2kΩ
0.00003
RL = 600Ω
0.00003
Limit (3)
Units
(Limits)
0.00009
%
(max)
THD+N
Total Harmonic Distortion +
Noise
AV = 1, VOUT = 3Vrms
IMD
Intermodulation Distortion
AV = 1, VOUT = 3VRMS, Two-tone, 60Hz & 7kHz 4:1
GBWP
Gain Bandwidth Product
55
45
MHz
(min)
SR
Slew Rate
±20
±15
V/μs
(min)
FPBW
Full Power Bandwidth
VOUT = 1VP-P, –3dB
referenced to output magnitude at f = 1kHz
10
ts
Settling time
AV = –1, 10V step, CL = 100pF, 0.1% error range
1.2
μs
0.34
0.65
μVRMS
(max)
4.7
0.00005
Equivalent Input Noise Voltage fBW = 20Hz to 20kHz
en
in
Equivalent Input Noise Density
f = 1kHz
f = 10Hz
2.7
6.4
Current Noise Density
f = 1kHz
f = 10Hz
1.6
3.1
VOS
Offset Voltage
ΔVOS/ΔTe
mp
Average Input Offset Voltage
Drift vs Temperature
(1)
(2)
(3)
%
MHz
nV/√H
z (max)
pA/√H
z
VS = ±18V
±0.12
±0.7
mV
(max)
VS = ±22V
±0.14
±0.7
mV
(max)
–40°C ≤ TA ≤ 85°C
0.2
μV/°C
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.
Typical specifications are specified at +25ºC and represent the most likely parametric norm.
Tested limits are ensured to AOQL (Average Outgoing Quality Level).
Copyright © 2007–2013, Texas Instruments Incorporated
Submit Documentation Feedback
Product Folder Links: LME49860 LME49860MABD LME49860NABD
3
LME49860, LME49860MABD, LME49860NABD
SNAS389C – JUNE 2007 – REVISED APRIL 2013
www.ti.com
ELECTRICAL CHARACTERISTICS FOR THE LME49860(1) (continued)
The following specifications apply for VS = ±18V and ±22V, RL = 2kΩ, RSOURCE = 10Ω, fIN = 1kHz, TA = 25°C, unless otherwise
specified.
Symbol
PSRR
ISOCH-CH
Parameter
ΔIOS/ΔTe
mp
See (4)
VS = ±18V, Δ VS = 24V
VS = ±22V, Δ VS = 30V
120
120
Channel-to-Channel Isolation
fIN = 1kHz
fIN = 20kHz
118
112
Input Bias Current Drift vs
Temperature
CMRR
–40°C ≤ TA ≤ 85°C
Common-Mode Rejection
Common Mode Input
Impedance
AVOL
Open Loop Voltage Gain
VOUTMAX
Maximum Output Voltage
Swing
dB
72
nA
(max)
nA/°C
nA
(max)
VS = ±18V
+17.1
–16.9
(V+) – 2.0
(V-) + 2.0
V (min)
V (min)
VS = ±22V
+21.0
–20.8
(V+) – 2.0
(V-) + 2.0
V (min)
V (min)
VS = ±18V
-12V ≤ VCM ≤ 12V
120
VS = ±22V
-15V ≤ VCM ≤ 15V
120
dB
110
dB
(min)
30
kΩ
–10V