LMH6583
www.ti.com
SNOSAP5E – APRIL 2006 – REVISED MARCH 2013
LMH6583 16x8 550 MHz Analog Crosspoint Switch, Gain of 2
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FEATURES
DESCRIPTION
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The LMH™ family of products is joined by the
LMH6583, a high speed, non-blocking, analog,
crosspoint switch. The LMH6583 is designed for high
speed, DC coupled, analog signals like high
resolution video (UXGA and higher). The LMH6583
has 16 inputs and 8 outputs. The non-blocking
architecture allows an output to be connected to any
input, including an input that is already selected. With
fully buffered inputs the LMH6583 can be impedance
matched to nearly any source impedance. The
buffered outputs of the LMH6583 can drive up to two
back terminated video loads (75Ω load). The outputs
and inputs also feature high impedance inactive
states allowing high performance input and output
expansion for array sizes such as 16 x 16 or 32 x 8
by combining two devices. The LMH6583 is
controlled with a 4 pin serial interface. Both single
serial mode and addressed chain modes are
available.
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16 Inputs and 8 Outputs
64-pin Exposed Pad HTQFP Package
– −3 dB Bandwidth (VOUT = 2 VPP, RL = 1 kΩ)
550 MHz
– −3 dB Bandwidth (VOUT = 2 VPP,RL = 150Ω)
450 MHz
Fast Slew Rate 1800 V/μs
Channel to Channel Crosstalk (10/ 100 MHz)
−70/ −52 dBc
All Hostile Crosstalk (10/ 100 MHz) −55/−45
dBc
Easy to Use Serial Programming 4 Wire Bus
Two Programming Modes Serial & Addressed
Modes
Symmetrical Pinout Facilitates Expansion.
Output Current ±60 mA
Gain of 1 Version also Available LMH6582
APPLICATIONS
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The LMH6583 comes in a 64-pin thermally enhanced
HTQFP package. It also has diagonally symmetrical
pin assignments to facilitate double sided board
layouts and easy pin connections for expansion.
Studio Monitoring/Production Video Systems
Conference Room Multimedia Video Systems
KVM (Keyboard Video Mouse) Systems
Security/Surveillance Systems
Multi Antenna Diversity Radio
Video Test Equipment
Medical Imaging
Wide-Band Routers & Switches
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Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
LMH is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2006–2013, Texas Instruments Incorporated
LMH6583
SNOSAP5E – APRIL 2006 – REVISED MARCH 2013
www.ti.com
Connection Diagram
32
IN8
OUT7
VEE
GND
IN9
VEE
VCC
GND
IN10
OUT6
VEE
VCC
IN11
OUT5
CFG
VCC
GND
BCST
IN12
VEE
VEE
GND
OUT4
IN13
VCC
IN14
VEE
CFG
DATA IN
CS
CLK
40
LOAD
REGISTER
RST
DATA OUT
CS
MODE
DIN
MODE
RST
VCC
OUT3
VEE
GND
GND
OUT2
VCC
OUT1
VEE
DOUT
GND
CLK
VCC
OUT0
IN15
GND
136
CONFIGURATION
REGISTER
VCC
GND
BCST
64
SWITCH
MATRIX
8 OUTPUTS
16 INPUTS
IN0
VCC
IN1
VEE
IN2
VCC
IN3
VEE
IN4
VCC
IN5
VEE
IN6
VCC
IN7
VEE
48
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Figure 1. 64-Pin Exposed Pad HTQFP
See Package Number PAP0064A
Figure 2. Block Diagram
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
ESD Tolerance
(1) (2)
(3)
Human Body Model
2000V
Machine Model
200V
VS
±6V
IIN (Input Pins)
±20 mA
(4)
IOUT
V− to V+
Input Voltage Range
Maximum Junction Temperature
+150°C
−65°C to +150°C
Storage Temperature Range
Soldering Information
(1)
(2)
(3)
(4)
2
Infrared or Convection (20 sec.)
235°C
Wave Soldering (10 sec.)
260°C
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not ensured. For ensured specifications, see ±3.3V Electrical
Characteristics and ±5V Electrical Characteristics.
If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and
specifications.
Human Body Model, applicable std. MIL-STD-883, Method 3015.7. Machine Model, applicable std. JESD22-A115-A (ESD MM std. of
JEDEC)Field-Induced Charge-Device Model, applicable std. JESD22-C101-C (ESD FICDM std. of JEDEC).
The maximum output current (IOUT) is determined by device power dissipation limitations.
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LMH6583
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SNOSAP5E – APRIL 2006 – REVISED MARCH 2013
Operating Ratings
Temperature Range
(1)
(2)
−40°C to +85°C
Supply Voltage Range
±3V to ±5.5V
θJA
θJC
27°C/W
0.82°C/W
Thermal Resistance
64–Pin Exposed Pad HTQFP
(1)
(2)
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not ensured. For ensured specifications, see ±3.3V Electrical
Characteristics and ±5V Electrical Characteristics.
The maximum power dissipation is a function of TJ(MAX)and θJA. The maximum allowable power dissipation at any ambient temperature
is PD = (TJ(MAX) – TA)/ θJA. All numbers apply for packages soldered directly onto a PC Board.
±3.3V Electrical Characteristics
(1)
Unless otherwise specified, typical conditions are: TA = 25°C, AV = +2, VS = ±3.3V, RL = 100Ω; Boldface limits apply at the
temperature extremes.
Symbol
Parameter
Conditions
Min
(2)
Typ
(3)
Max
(2)
Units
Frequency Domain Performance
SSBW
−3 dB Bandwidth
LSBW
VOUT = 0.5 VPP
425
VOUT = 2 VPP, RL = 1 kΩ
500
VOUT = 2 VPP, RL = 150Ω
450
MHz
GF
0.1 dB Gain Flatness
VOUT = 2 VPP, RL = 150Ω
DG
Differential Gain
RL = 150Ω, 3.58 MHz/ 4.43 MHz
0.05
80
MHz
%
DP
Differential Phase
RL = 150Ω, 3.58 MHz/ 4.43 MHz
0.05
deg
Time Domain Response
tr
Rise Time
2V Step, 10% to 90%
1.7
ns
tf
Fall Time
2V Step, 10% to 90%
1.4
ns
OS
Overshoot
2V Step
4
%
1700
V/µs
9
ns
dBc
(4)
SR
Slew Rate
4 VPP, 40% to 60%
ts
Settling Time
2V Step, VOUT within 0.5%
Distortion And Noise Response
HD2
2nd Harmonic Distortion
2 VPP, 10 MHz
−76
HD3
3rd Harmonic Distortion
2 VPP, 10 MHz
−76
dBc
en
Input Referred Voltage Noise
>1 MHz
12
nV/ √Hz
in
Input Referred Noise Current
>1 MHz
2
pA/ √Hz
16
ns
XTLK
Switching Time
Crosstalk
All Hostile, f = 100 MHz
−45
dBc
ISOL
Off Isolation
f = 100 MHz
−60
dBc
Static, DC Performance
AV
Gain
VOS
Output Offset Voltage
1.986
(5)
2.00
2.014
±3
±17
TCVOS
Output Offset Voltage Average Drift
IB
Input Bias Current
Non-Inverting
(6)
−5
µA
TCIB
Input Bias Current Average Drift
Non-Inverting
(5)
-12
nA/°C
VO
Output Voltage Range
RL = 100Ω
±2.1
V
(1)
(2)
(3)
(4)
(5)
(6)
38
mV
±1.75
µV/°C
Electrical Table values apply only for factory testing conditions at the temperature indicated. No ensurance of parametric performance is
indicated in the electrical tables under conditions different than those tested.
Room Temperature limits are 100% production tested at 25°C. Device self heating results in TJ ≥ TA, however, test time is insufficient for
TJto reach steady state conditions. Limits over the operating temperature range are ensured through correlation using Statistical Quality
Control (SQC) methods.
Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and will also depend on the application and configuration. The typical values are not tested and are not ensured on shipped
production material.
Slew Rate is the average of the rising and falling edges.
Drift determined by dividing the change in parameter at temperature extremes by the total temperature change.
Negative input current implies current flowing out of the device.
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LMH6583
SNOSAP5E – APRIL 2006 – REVISED MARCH 2013
www.ti.com
±3.3V Electrical Characteristics (1) (continued)
Unless otherwise specified, typical conditions are: TA = 25°C, AV = +2, VS = ±3.3V, RL = 100Ω; Boldface limits apply at the
temperature extremes.
Symbol
Parameter
Conditions
RL = ∞
(7)
Min
(2)
+2.1
-2.05
Typ
(3)
Max
(2)
±2.2
Units
VO
Output Voltage Range
V
PSRR
Power Supply Rejection Ratio
ICC
Positive Supply Current
RL = ∞
98
120
mA
IEE
Negative Supply Current
RL = ∞
92
115
mA
Tri State Supply Current
RST Pin > 2.0V
17
25
mA
100
45
dB
Miscellaneous Performance
RIN
Input Resistance
Non-Inverting
CIN
Input Capacitance
Non-Inverting
RO
Output Resistance Enabled
Closed Loop, Enabled
RO
Output Resistance Disabled
Disabled
CMVR
Input Common Mode Voltage Range
IO
Output Current
1100
Sourcing, VO = 0 V
kΩ
1
pF
300
mΩ
1300
1450
Ω
±1.3
V
±50
mA
Digital Control
VIH
Input Voltage High
VIL
Input Voltage Low
VOH
Output Voltage High
>2.2
V
VOL
Output Voltage Low
1 MHz
12
nV/ √Hz
in
Input Referred Noise Current
>1 MHz
2
pA/ √Hz
Switching Time
XTLK
ISOL
Cross Talk
Off Isolation
dBc
15
ns
All Hostile, f = 100 MHz
−45
dBc
Channel to Channel, f = 100 MHz
−52
dBc
f = 100 MHz
−65
dBc
Static, DC Performance
AV
Gain
LMH6583
1.986
VOS
Offset Voltage
Input Referred
TCVOS
Output Offset Voltage Average Drift
IB
Input Bias Current
Non-Inverting
(6)
−5
TCIB
Input Bias Current Average Drift
Non-Inverting
(5)
−12
nA/°C
VO
Output Voltage Range
RL = 100Ω
+3.3
−3.4
±3.6
V
VO
Output Voltage Range
RL = ∞
±3.7
±3.9
V
PSRR
Power Supply Rejection Ratio
DC
42
45
dB
XTLK
DC Crosstalk
DC, Channel to Channel
−58
−90
dB
ISOL
DC Off Isloation
DC
−60
−90
dB
ICC
Positive Supply Current
RL = ∞
110
130
mA
IEE
Negative Supply Current
RL = ∞
104
124
mA
Tri State Supply Current
RST Pin > 2.0V
22
30
mA
(5)
2.00
2.014
±2
±17
38
mV
µV/°C
−12
µA
Miscellaneous Performance
RIN
Input Resistance
Non-Inverting
100
CIN
Input Capacitance
Non-Inverting
1
pF
RO
Output Resistance Enabled
Closed Loop, Enabled
300
mΩ
RO
Output Resistance Disabled
Disabled, Resistance to Ground
CMVR
Input Common Mode Voltage Range
IO
Output Current
Sourcing, VO = 0 V
1100
±60
1300
kΩ
1450
Ω
±3.0
V
±70
mA
Digital Control
VIH
Input Voltage High
VIL
Input Voltage Low
VOH
Output Voltage High
>2.4
VOL
Output Voltage Low