LMH6619Q
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SNOSC78A – JUNE 2012 – REVISED NOVEMBER 2012
LMH6619Q 130 MHz, 1.25 mA RRIO Operational Amplifier
Check for Samples: LMH6619Q
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VS = 5V, RL = 1 kΩ, TA = 25°C and AV = +1,
unless otherwise specified.
Operating voltage range 2.7V to 11V
Supply current per channel 1.25 mA
Small signal bandwidth 130 MHz
Input offset voltage (limit at 25°C) ±0.75 mV
Slew rate 55 V/µs
Settling time to 0.1% 90 ns
Settling time to 0.01% 120 ns
SFDR (f = 100 kHz, AV = +1, VOUT = 2 VPP) 100
dBc
0.1 dB bandwidth (AV = +2) 15 MHz
Low voltage noise 10 nV/√Hz
Rail-to-Rail input and output
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AEC-Q100 grade 2 qualified −40°C to +105°C
Manufactured on an automotive grade flow
APPLICATIONS
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ADC driver
DAC buffer
Active filters
High speed sensor amplifier
Current sense amplifier
Portable video
STB, TV video amplifier
Automotive
DESCRIPTION
The LMH6619Q (dual) is a 130 MHz rail-to-rail input and output amplifier designed for ease of use in a wide
range of applications requiring high speed, low supply current, low noise, and the ability to drive complex ADC
and video loads. The operating voltage range extends from 2.7V to 11V and the supply current is typically 1.25
mA per channel at 5V. The LMH6619Q is a member of the PowerWise® family and have an exceptional powerto-performance ratio.
The amplifier’s voltage feedback design topology provides balanced inputs and high open loop gain for ease of
use and accuracy in applications such as active filter design. Offset voltage is typically 0.1 mV and settling time
to 0.01% is 120 ns which combined with an 100 dBc SFDR at 100 kHz makes the part suitable for use as an
input buffer for popular 8-bit, 10-bit, 12-bit and 14-bit mega-sample ADCs.
The input common mode range extends 200 mV beyond the supply rails. On a single 5V supply with a ground
terminated 150Ω load the output swings to within 37 mV of the ground rail, while a mid-rail terminated 1 kΩ load
will swing to 77 mV of either rail, providing true single supply operation and maximum signal dynamic range on
low power rails. The amplifier output will source and sink 35 mA and drive up to 30 pF loads without the need for
external compensation.
The LMH6619Q is offered in the 8-Pin SOIC package.
1
2
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Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PowerWise, WEBENCH are registered trademarks of Texas Instruments.
All other trademarks are the property of their respective owners.
PRODUCT PREVIEW information concerns products in the
formative or design phase of development. Characteristic data and
other specifications are design goals. Texas Instruments reserves
the right to change or discontinue these products without notice.
Copyright © 2012, Texas Instruments Incorporated
PRODUCT PREVIEW
FEATURES
1
LMH6619Q
SNOSC78A – JUNE 2012 – REVISED NOVEMBER 2012
www.ti.com
Typical Application
Figure 1. Single to Differential ADC Driver
+
V
V
560:
10 PF
+
0.1 PF
10 PF
-
33:
+
V
LMH6619
+
INPUT
220 pF
0.1 PF
560:
560:
10 PF
560:
+
V
560:
-
ADC121S625
33:
LMH6619
+
220 pF
560:
PRODUCT PREVIEW
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
ESD Tolerance
(1)
(2)
Human Body Model
For input pins only
2000V
For all other pins
2000V
Machine Model
200V
Supply Voltage (VS = V+ – V−)
Junction Temperature
12V
(3)
150°C max
Storage Temperature Range
–65°C to 150°C
Soldering Information:
See product folder at www.ti.com and www.ti.com/ lit/an/snoa549c /snoa549c.pdf.
(1)
(2)
(3)
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test
conditions, see the Electrical Characteristics.
Human Body Model, applicable std. MIL-STD-883, Method 3015.7. Machine Model, applicable std. JESD22-A115-A (ESD MM std. of
JEDEC)Field-Induced Charge-Device Model, applicable std. JESD22-C101-C (ESD FICDM std. of JEDEC).
The maximum power dissipation is a function of TJ(MAX), θJA. The maximum allowable power dissipation at any ambient temperature is
PD = (TJ(MAX) – TA)/ θJA. All numbers apply for packages soldered directly onto a PC Board.
Operating Ratings
(1)
Supply Voltage (VS = V+ – V−)
Ambient Temperature Range
2.7V to 11V
(2)
−40°C to +105°C
Package Thermal Resistance (θJA)
8-Pin SOIC
(1)
(2)
2
160°C/W
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test
conditions, see the Electrical Characteristics.
The maximum power dissipation is a function of TJ(MAX), θJA. The maximum allowable power dissipation at any ambient temperature is
PD = (TJ(MAX) – TA)/ θJA. All numbers apply for packages soldered directly onto a PC Board.
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SNOSC78A – JUNE 2012 – REVISED NOVEMBER 2012
+3V Electrical Characteristics
Unless otherwise specified, all limits are guaranteed for TJ = +25°C, V+ = 3V, V− = 0V, VCM = VO = V+/2, AV = +1 (RF = 0Ω),
otherwise RF = 2 kΩ for AV ≠ +1, RL = 1 kΩ || 5 pF. Boldface Limits apply at temperature extremes. (1)
Symbol
Parameter
Condition
Min
(2)
Typ
(3)
Max
(2)
Units
Frequency Domain Response
SSBW
–3 dB Bandwidth Small Signal
AV = 1, RL = 1 kΩ, VOUT = 0.2 VPP
120
AV = 2, −1, RL = 1 kΩ, VOUT = 0.2 VPP
56
GBW
Gain Bandwidth
AV = 10, RF = 2 kΩ, RG = 221Ω,
RL = 1 kΩ, VOUT = 0.2 VPP
55
LSBW
−3 dB Bandwidth Large Signal
AV = 1, RL = 1 kΩ, VOUT = 2 VPP
13
AV = 2, RL = 150Ω, VOUT = 2 VPP
13
MHz
63
MHz
MHz
Peak
Peaking
AV = 1, CL = 5 pF
1.5
dB
0.1
dBBW
0.1 dB Bandwidth
AV = 2, VOUT = 0.5 VPP ,
RF = RG = 825Ω
15
MHz
DG
Differential Gain
AV = +2, 4.43 MHz, 0.6V < VOUT < 2V,
RL = 150Ω to V+/2
0.1
%
DP
Differential Phase
AV = +2, 4.43 MHz, 0.6V < VOUT < 2V,
RL = 150Ω to V+/2
0.1
deg
tr/tf
Rise & Fall Time
2V Step, AV = 1
SR
Slew Rate
2V Step, AV = 1
ts_0.1
0.1% Settling Time
2V Step, AV = −1
90
ts_0.01
0.01% Settling Time
2V Step, AV = −1
120
fC = 100 kHz, VOUT= 2 VPP, RL = 1 kΩ
100
fC = 1 MHz, VOUT = 2 VPP, RL = 1 kΩ
61
fC = 5 MHz, VOUT = 2 VPP, RL = 1 kΩ
47
10
nV/
pA/
36
36
ns
46
V/μs
PRODUCT PREVIEW
Time Domain Response
ns
Noise and Distortion Performance
SFDR
Spurious Free Dynamic Range
en
Input Voltage Noise Density
f = 100 kHz
in
Input Current Noise Density
f = 100 kHz
1
CT
Crosstalk
f = 5 MHz, VIN = 2 VPP
80
VCM = 0.5V (pnp active)
VCM = 2.5V (npn active)
0.1
dBc
dB
Input, DC Performance
VOS
Input Offset Voltage
TCVOS
Input Offset Voltage Temperature Drift
IB
Input Bias Current
(4)
VCM = 0.5V (pnp active)
−1.4
−2.6
VCM = 2.5V (npn active)
+1.0
+1.8
±0.27
Input Offset Current
0.01
CIN
Input Capacitance
1.5
RIN
Input Resistance
CMVR
Common Mode Voltage Range
DC, CMRR ≥ 65 dB
CMRR
Common Mode Rejection Ratio
VCM Stepped from −0.1V to 1.4V
78
96
VCM Stepped from 2.0V to 3.1V
81
107
RL = 1 kΩ to +2.7V or +0.3V
85
98
RL = 150Ω to +2.6V or +0.4V
76
82
Open Loop Voltage Gain
mV
μV/°C
0.8
IOS
AOL
±0.75
±1.3
μA
pF
8
−0.2
μA
MΩ
3.2
V
dB
dB
Output DC Characteristics
(1)
(2)
(3)
(4)
Boldface limits apply to temperature range of −40°C to 105°C
Limits are 100% production tested at 25°C. Limits over the operating temperature range are guaranteed through correlations using the
Statistical Quality Control (SQC) method.
Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and will also depend on the application and configuration. The typical values are not tested and are not guaranteed on
shipped production material.
Voltage average drift is determined by dividing the change in VOS by temperature change.
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SNOSC78A – JUNE 2012 – REVISED NOVEMBER 2012
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+3V Electrical Characteristics (continued)
Unless otherwise specified, all limits are guaranteed for TJ = +25°C, V+ = 3V, V− = 0V, VCM = VO = V+/2, AV = +1 (RF = 0Ω),
otherwise RF = 2 kΩ for AV ≠ +1, RL = 1 kΩ || 5 pF. Boldface Limits apply at temperature extremes. (1)
Symbol
VOUT
Parameter
Typ
Max
Output Voltage Swing High (Voltage from RL = 1 kΩ to V+/2
V+ Supply Rail)
50
56
62
RL =150Ω to V+/2
160
172
198
RL = 1 kΩ to V+/2
62
68
76
RL =150Ω to V+/2
175
189
222
RL = 150Ω to V−
34
44
48
Output Voltage Swing Low (Voltage from
V− Supply Rail)
Condition
IOUT
Linear Output Current
VOUT = V+/2
ROUT
Output Resistance
f = 1 MHz
(5)
Min
(2)
±25
(3)
(2)
Units
mV from
either rail
±35
mA
0.17
Ω
Power Supply Performance
PRODUCT PREVIEW
PSRR
Power Supply Rejection Ratio
DC, VCM = 0.5V, VS = 2.7V to 11V
IS
Supply Current
(per channel)
RL = ∞
(5)
4
84
104
1.2
dB
1.5
1.75
Do not short circuit the output. Continuous source or sink currents larger than the IOUT typical are not recommended as it may damage
the part.
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SNOSC78A – JUNE 2012 – REVISED NOVEMBER 2012
+5V Electrical Characteristics
Unless otherwise specified, all limits are guaranteed for TJ = +25°C, V+ = 5V, V− = 0V, VCM = VO = V+/2, AV = +1 (RF = 0Ω),
otherwise RF = 2 kΩ for AV ≠ +1, RL = 1 kΩ || 5 pF. Boldface Limits apply at temperature extremes.
Symbol
Parameter
Condition
Min
(1)
Typ
(2)
Max
(1)
Units
Frequency Domain Response
SSBW
–3 dB Bandwidth Small Signal
AV = 1, RL = 1 kΩ, VOUT = 0.2 VPP
130
AV = 2, −1, RL = 1 kΩ, VOUT = 0.2 VPP
53
GBW
Gain Bandwidth
AV = 10, RF = 2 kΩ, RG = 221Ω,
RL = 1 kΩ, VOUT = 0.2 VPP
54
LSBW
−3 dB Bandwidth Large Signal
AV = 1, RL = 1 kΩ, VOUT = 2 VPP
15
AV = 2, RL = 150Ω, VOUT = 2 VPP
15
MHz
57
MHz
MHz
Peak
Peaking
AV = 1, CL = 5 pF
0.5
dB
0.1
dBBW
0.1 dB Bandwidth
AV = 2, VOUT = 0.5 VPP,
RF = RG = 1 kΩ
15
MHz
DG
Differential Gain
AV = +2, 4.43 MHz, 0.6V < VOUT < 2V,
RL = 150Ω to V+/2
0.1
%
DP
Differential Phase
AV = +2, 4.43 MHz, 0.6V < VOUT < 2V,
RL = 150Ω to V+/2
0.1
deg
tr/tf
Rise & Fall Time
2V Step, AV = 1
SR
Slew Rate
2V Step, AV = 1
ts_0.1
0.1% Settling Time
2V Step, AV = −1
90
ts_0.01
0.01% Settling Time
2V Step, AV = −1
120
fC = 100 kHz, VOUT = 2 VPP, RL = 1 kΩ
100
fC = 1 MHz, VOUT = 2 VPP, RL = 1 kΩ
88
fC = 5 MHz, VO = 2 VPP, RL = 1 kΩ
61
10
nV/
pA/
44
30
ns
55
V/μs
PRODUCT PREVIEW
Time Domain Response
ns
Distortion and Noise Performance
SFDR
Spurious Free Dynamic Range
en
Input Voltage Noise Density
f = 100 kHz
in
Input Current Noise Density
f = 100 kHz
1
CT
Crosstalk
f = 5 MHz, VIN = 2 VPP
80
VCM = 0.5V (pnp active)
VCM = 4.5V (npn active)
0.1
dBc
dB
Input, DC Performance
VOS
Input Offset Voltage
TCVOS
Input Offset Voltage Temperature Drift
IB
Input Bias Current
(3)
0.8
−1.5
−2.4
VCM = 4.5V (npn active)
+1.0
+1.9
±0.26
Input Offset Current
0.01
CIN
Input Capacitance
1.5
RIN
Input Resistance
CMVR
Common Mode Voltage Range
DC, CMRR ≥ 65 dB
CMRR
Common Mode Rejection Ratio
VCM Stepped from −0.1V to 3.4V
81
98
VCM Stepped from 4.0V to 5.1V
84
108
RL = 1 kΩ to +4.6V or +0.4V
84
100
RL = 150Ω to +4.5V or +0.5V
78
83
Open Loop Voltage Gain
mV
µV/°C
VCM = 0.5V (pnp active)
IOS
AOL
±0.75
±1.3
μA
pF
8
−0.2
μA
MΩ
5.2
V
dB
dB
Output DC Characteristics
(1)
(2)
(3)
Limits are 100% production tested at 25°C. Limits over the operating temperature range are guaranteed through correlations using the
Statistical Quality Control (SQC) method.
Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and will also depend on the application and configuration. The typical values are not tested and are not guaranteed on
shipped production material.
Voltage average drift is determined by dividing the change in VOS by temperature change.
Submit Documentation Feedback
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LMH6619Q
SNOSC78A – JUNE 2012 – REVISED NOVEMBER 2012
www.ti.com
+5V Electrical Characteristics (continued)
Unless otherwise specified, all limits are guaranteed for TJ = +25°C, V+ = 5V, V− = 0V, VCM = VO = V+/2, AV = +1 (RF = 0Ω),
otherwise RF = 2 kΩ for AV ≠ +1, RL = 1 kΩ || 5 pF. Boldface Limits apply at temperature extremes.
Symbol
VOUT
Parameter
Output Voltage Swing High Voltage from
V+ Supply Rail)
Output Voltage Swing Low Voltage from
V− Supply Rail)
Condition
Typ
Max
RL = 1 kΩ to V+/2
60
73
82
RL = 150Ω to V+/2
230
255
295
RL = 1 kΩ to V+/2
77
85
98
RL = 150Ω to V+/2
255
275
326
RL = 150Ω to V−
37
48
50
IOUT
Linear Output Current
VOUT = V+/2
ROUT
Output Resistance
f = 1 MHz
(4)
Min
(1)
±25
(2)
(1)
Units
mV from
either rail
±35
mA
0.17
Ω
Power Supply Performance
PRODUCT PREVIEW
PSRR
Power Supply Rejection Ratio
DC, VCM = 0.5V, VS = 2.7V to 11V
IS
Supply Current
(per channel)
RL = ∞
(4)
6
84
104
1.3
dB
1.5
1.75
Do not short circuit the output. Continuous source or sink currents larger than the IOUT typical are not recommended as it may damage
the part.
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LMH6619Q
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SNOSC78A – JUNE 2012 – REVISED NOVEMBER 2012
±5V Electrical Characteristics
Unless otherwise specified, all limits are guaranteed for TJ = +25°C, V+ = 5V, V− = −5V, VCM = VO = 0V, AV = +1 (RF = 0Ω),
otherwise RF = 2 kΩ for AV ≠ +1, RL = 1 kΩ || 5 pF. Boldface Limits apply at temperature extremes.
Symbol
Parameter
Condition
Min
(1)
Typ
(2)
Max
(1)
Units
Frequency Domain Response
SSBW
–3 dB Bandwidth Small Signal
AV = 1, RL = 1 kΩ, VOUT = 0.2 VPP
140
AV = 2, −1, RL = 1 kΩ, VOUT = 0.2 VPP
53
GBW
Gain Bandwidth
AV = 10, RF = 2 kΩ, RG = 221Ω,
RL = 1 kΩ, VOUT = 0.2 VPP
54
LSBW
−3 dB Bandwidth Large Signal
AV = 1, RL = 1 kΩ, VOUT = 2 VPP
16
AV = 2, RL = 150Ω, VOUT = 2 VPP
15
MHz
58
MHz
MHz
Peak
Peaking
AV = 1, CL = 5 pF
0.05
dB
0.1
dBBW
0.1 dB Bandwidth
AV = 2, VOUT = 0.5 VPP,
RF = RG = 1.21 kΩ
15
MHz
DG
Differential Gain
AV = +2, 4.43 MHz, 0.6V < VOUT < 2V,
RL = 150Ω to V+/2
0.1
%
DP
Differential Phase
AV = +2, 4.43 MHz, 0.6V < VOUT < 2V,
RL = 150Ω to V+/2
0.1
deg
tr/tf
Rise & Fall Time
2V Step, AV = 1
SR
Slew Rate
2V Step, AV = 1
ts_0.1
0.1% Settling Time
2V Step, AV = −1
90
ts_0.01
0.01% Settling Time
2V Step, AV = −1
120
fC = 100 kHz, VOUT = 2 VPP, RL = 1 kΩ
100
fC = 1 MHz, VOUT = 2 VPP, RL = 1 kΩ
88
fC = 5 MHz, VOUT = 2 VPP, RL = 1 kΩ
70
10
nV/
pA/
45
30
ns
57
V/μs
PRODUCT PREVIEW
Time Domain Response
ns
Noise and Distortion Performance
SFDR
Spurious Free Dynamic Range
en
Input Voltage Noise Density
f = 100 kHz
in
Input Current Noise Density
f = 100 kHz
1
CT
Crosstalk
f = 5 MHz, VIN = 2 VPP
80
VCM = −4.5V (pnp active)
VCM = 4.5V (npn active)
0.1
dBc
dB
Input DC Performance
VOS
Input Offset Voltage
TCVOS
Input Offset Voltage Temperature Drift
IB
Input Bias Current
(3)
0.9
−1.5
−2.4
VCM = 4.5V (npn active)
+1.0
+1.9
±0.26
Input Offset Current
0.01
CIN
Input Capacitance
1.5
RIN
Input Resistance
CMVR
Common Mode Voltage Range
DC, CMRR ≥ 65 dB
CMRR
Common Mode Rejection Ratio
VCM Stepped from −5.1V to 3.4V
84
100
VCM Stepped from 4.0V to 5.1V
83
108
RL = 1 kΩ to +4.6V or −4.6V
86
95
RL = 150Ω to +4.3V or −4.3V
79
84
Open Loop Voltage Gain
mV
µV/°C
VCM = −4.5V (pnp active)
IOS
AOL
±0.75
±1.3
μA
pF
8
−5.2
μA
MΩ
5.2
V
dB
dB
Output DC Characteristics
(1)
(2)
(3)
Limits are 100% production tested at 25°C. Limits over the operating temperature range are guaranteed through correlations using the
Statistical Quality Control (SQC) method.
Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and will also depend on the application and configuration. The typical values are not tested and are not guaranteed on
shipped production material.
Voltage average drift is determined by dividing the change in VOS by temperature change.
Submit Documentation Feedback
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Product Folder Links: LMH6619Q
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LMH6619Q
SNOSC78A – JUNE 2012 – REVISED NOVEMBER 2012
www.ti.com
±5V Electrical Characteristics (continued)
Unless otherwise specified, all limits are guaranteed for TJ = +25°C, V+ = 5V, V− = −5V, VCM = VO = 0V, AV = +1 (RF = 0Ω),
otherwise RF = 2 kΩ for AV ≠ +1, RL = 1 kΩ || 5 pF. Boldface Limits apply at temperature extremes.
Symbol
VOUT
Parameter
Condition
Min
Typ
Max
100
111
126
RL = 150Ω to GND
430
457
526
RL = 1 kΩ to GND
115
126
141
RL = 150Ω to GND
450
484
569
RL = 150Ω to V−
45
61
62
(1)
Output Voltage Swing High (Voltage from RL = 1 kΩ to GND
V+ Supply Rail)
Output Voltage Swing Low (Voltage from
V− Supply Rail)
IOUT
Linear Output Current
VOUT = V+/2
ROUT
Output Resistance
f = 1 MHz
(4)
±25
(2)
(1)
Units
mV from
either rail
±35
mA
0.17
Ω
Power Supply Performance
PRODUCT PREVIEW
PSRR
Power Supply Rejection Ratio
DC, VCM = −4.5V, VS = 2.7V to 11V
IS
Supply Current
(per channel)
RL = ∞
(4)
84
104
1.45
dB
1.65
2.0
Do not short circuit the output. Continuous source or sink currents larger than the IOUT typical are not recommended as it may damage
the part.
Connection Diagram
8-Pin SOIC
OUT A
1
8
+
V
A
-IN A
+IN A
2
-
+
7
3
6
B
+
V
-
4
OUT B
-IN B
5
+IN B
Figure 2. Top View
8
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SNOSC78A – JUNE 2012 – REVISED NOVEMBER 2012
Typical Performance Characteristics
At TJ = 25°C, AV = +1 (RF = 0Ω), otherwise RF = 2 kΩ for AV ≠ +1, unless otherwise specified.
Closed Loop Frequency Response for
Various Supplies
Closed Loop Frequency Response for
Various Supplies
3
3
+
V = +1.5V
0
-3
±5V
±1.5V
+
V = +5V
GAIN (dB)
±2.5V
-9
-12
-
V = -5V
-3
A = +1
-6
VOUT = 0.2V
-18 RL = 1 k:
CL = 5 pF
-21
1
AV = +1
RL = 150:||3 pF
10
100
VOUT = 0.2V
-9
1000
1
10
FREQUENCY (MHz)
Closed Loop Frequency Response for
Various Supplies
3
+
+
V = +1.5V
V = +1.5V
-
V = -1.5V
+
V = +5V
-3
+
V = +2.5V
-
V = -5V
-
V = -2.5V
-6
-9
-12
AV = +2
-15 RL = 1 k:
VOUT = 0.2V
-18
1
10
-
0
NORMALIZED GAIN (dB)
NORMALIZED GAIN (dB)
0
1000
FREQUENCY (MHz)
Closed Loop Frequency Response for
Various Supplies
3
100
V = -1.5V
+
V = +5V
-
-3
V = -5V
+
-6 V = +2.5V
V = -2.5V
-9
AV = +2
-12
RF = RG = 2 k:
-15 RL = 150:
VOUT = 0.4V
-18
100
1
1000
10
100
1000
FREQUENCY (MHz)
FREQUENCY (MHz)
Closed Loop Frequency Response for
Various Temperatures
Closed Loop Frequency Response for
Various Temperatures
3
3
-40°C
0
-40°C
0
-3
-3
25°C
-6
GAIN (dB)
GAIN (dB)
25°C
85°C
-9
PRODUCT PREVIEW
GAIN (dB)
-
V = -2.5V
0
-6
-15
+
V = +2.5V
-
V = -1.5V
AV = +1
125°C
+
-12 V = +2.5V
V = -2.5V
-15
VOUT = 0.2 VPP
-18 RL = 1 k:
CL = 10 pF
-21
1
10
100
1000
FREQUENCY (MHz)
-6
85°C
-9
AV = +1
+
-12 V = +2.5V
V = -2.5V
-15
VOUT = 0.2 VPP
-18 RL = 150:
CL = 10 pF
-21
1
10
125°C
100
1000
FREQUENCY (MHz)
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Typical Performance Characteristics (continued)
At TJ = 25°C, AV = +1 (RF = 0Ω), otherwise RF = 2 kΩ for AV ≠ +1, unless otherwise specified.
Closed Loop Gain
vs.
Frequency for
Various Gains
Large Signal Frequency Response
3
3
0
0
A=1
NORMALIZED GAIN (dB)
NORMALIZED GAIN (dB)
+
V = +5V
-3
A=2
A=5
-6
A = 10
-9
+
-12 V = +2.5V
V = -2.5V
-15
RL = 1 k:
-
V = -5V
+
-3
V = +2.5V
+
V = -1.5V
-9
AV = +2
-12
RF = RG = 2 k:
VOUT = 2V
100
-18
1000
1
10
FREQUENCY (MHz)
PRODUCT PREVIEW
±1.5V
±2.5V
GAIN (dB)
NORMALIZED GAIN (dB)
0.2
0
±5V
-0.1
-0.2
1
10
100
5
4
3
2
1
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
CL = 30 pF
CL = 20 pF
CL = 10 pF
CL = 5 pF
CL = 0 pF
+
V = +5V
-
V = -5V
RL = 1 k:
VOUT = 0.2V
1
10
1000
HD2
vs.
Frequency and Supply Voltage
Small Signal Frequency Response with
Capacitive Load and Various RISO
-20
11
+
V = +5V
9
-30
-
V = -5V
7
-40
DISTORTION (dBc)
VOUT = 0.2 VPP
5 C = 100 pF
L
GAIN (dB)
100
FREQUENCY (MHz)
FREQUENCY (MHz)
RISO = 0
3
1
-1
RISO = 25
-3
RISO = 50
RISO = 100
-5
10
+
V = +1.5V
RL = 1 k:
-
V = -1.5V
RF = 0:
A = +1
-60
+
V = +2.5V
-
V = -2.5V
-70
-80
+
V = +5V
-
-100
-9
1
-50
VOUT = 2 VPP
-90
RISO = 75
-7
100
1000
-110
0.1
V = -5V
1
10
FREQUENCY (MHz)
FREQUENCY (MHz)
10
1000
Small Signal Frequency Response with
Various Capacitive Load
0.3
0.1
100
FREQUENCY (MHz)
±0.1 dB Gain Flatness for Various Supplies
0.10
V = -2.5V
-
-6
-15 RL = 1 k:
-18 CL = 5 pF
VOUT = 0.2V
-21
1
10
-0.3
0.01
-
V = +1.5V
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Typical Performance Characteristics (continued)
At TJ = 25°C, AV = +1 (RF = 0Ω), otherwise RF = 2 kΩ for AV ≠ +1, unless otherwise specified.
HD3
vs.
Frequency and Supply Voltage
V = +1.5V
-
RL = 1 k:
V = -1.5V
DISTORTION (dBc)
-50
-60
+
V = +2.5V
-70
-
V = -2.5V
-80
HD3, RL = 150:
-
RF = 0:
A = +1
-40
DISTORTION (dBc)
-20
VOUT = 2 VPP
-30 V+ = +2.5V
+
VOUT = 2 VPP
-40 V = -2.5V
RF = 0:
-50
A = +1
HD2, RL = 150:
-60
-70
-80
-90
-90
HD2, RL = 1 k:
+
V = +5V
-100
-100
-
HD3, RL = 1 k:
V = -5V
-110
0.1
1
-110
0.1
10
1
FREQUENCY (MHz)
FREQUENCY (MHz)
HD2 and HD3
vs.
Common Mode Voltage
HD2
DISTORTION (dBc)
-50
fIN = 1 MHz
+
V = +2.5V
V = -2.5V
-60
HD2 and HD3
vs.
Common Mode Voltage
-60
-80
-90
-100
-110
0
1
2
V = +2.5V
3
4
5
-80
-90
-100
-
V = -2.5V
6
7
8
9
-120
10
2
V = +2.5V
-
V = -2.5V
-
3
4
5
6
7
8
9
INPUT COMMON MODE VOLTAGE (V)
HD2
vs.
Frequency and Gain
HD3
vs.
Frequency and Gain
VOUT = 2 VPP
-40 V+ = +2.5V
-
-
V = -2.5V
-50
G = +10, HD2
DISTORTION (dBc)
RL = 1 k:
10
-30
VOUT = 2 VPP
-40 V+ = +2.5V
DISTORTION (dBc)
1
+
+
V = +5V
V = -5V
V = -5V
0
HD3
HD2
INPUT COMMON MODE VOLTAGE (V)
-30
-50
HD3
+
V = +5V
-110
-
V = -5V
V = -5V
RF = 0
A = +1
+
-
-
-120
RL = 1 k:
-70
HD3
HD3
+
V = +5V
VOUT = 1 VPP
-
V = -2.5V
RF = 0
A = +1
HD2
+
V = +5V
+
V = +2.5V
RL = 1 k:
-70
fIN = 100 kHz
HD2
VOUT = 1 VPP
DISTORTION (dBc)
-50
10
PRODUCT PREVIEW
-20
-30
HD2 and HD3
vs.
Frequency and Load
-60 RF = 2 k:
-70
-80
G = +1, HD2
-90
V = -2.5V
RL = 1 k:
-60 RF = 2 k:
G = +2, HD3
-70
G = +10, HD3
-80
-90
G = +1, HD3
-100
-100
G = +2, HD2
-110
0.1
1
10
-110
0.1
1
10
FREQUENCY (MHz)
FREQUENCY (MHz)
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Typical Performance Characteristics (continued)
At TJ = 25°C, AV = +1 (RF = 0Ω), otherwise RF = 2 kΩ for AV ≠ +1, unless otherwise specified.
HD2
vs.
Output Swing
Open Loop Gain/Phase
PHASE
PHASE (°)
GAIN (dB)
60
GAIN
40
40
20
+
20
HD2 (dBc)
80
80
V = +2.5V
-
0 RL = 1 k:
CL = 5 pF
-20
1k
10k 100k
5 MHz
-60
-70
1 MHz
500 kHz
1M
10M
100M
-20
-90
-40
1G
-100
100 kHz
0
1
2
FREQUENCY (Hz)
PRODUCT PREVIEW
+
-30
10 MHz
-40
5 MHz
+
V = +2.5V
HD2 (dBc)
-50
-60
-70
-80
5
-20
-
V = -2.5V
-40 AV = -1
-50 RL = 1 k:
HD3 (dBc)
4
HD2
vs.
Output Swing
10 MHz
V = +2.5V
-30
3
VOUT (VPP)
HD3
vs.
Output Swing
-20
10 MHz
-80
0
V = -2.5V
+
V = +2.5V
-40 V- = -2.5V
AV = -1
-50 RL = 1 k:
100
100
60
-30
120
120
-
AV = +2
RL = 1 k:
-70
1 MHz
-80
1 MHz
-90
V = -2.5V
5 MHz
-60
500 kHz
-90
500 kHz
-100
-100
100 kHz
100 kHz
-110
-110
0
1
2
3
4
5
0
1
VOUT (VPP)
2
3
4
5
VOUT (VPP)
HD2
vs.
Output Swing
HD3
vs.
Output Swing
-20
-20
10 MHz
-30
-30
10 MHz
-40
-40
-
-50
V = -2.5V
HD3 (dBc)
HD2 (dBc)
+
V = +2.5V
5 MHz
-50
AV = +2
-60
1 MHz
RL = 150:
-70
500 kHz
-80
-70
AV = +2
RL = 1 k:
1 MHz
-90
100 kHz
500 kHz
-100
100 kHz
-110
-110
0
1
2
-
V = -2.5V
-80
-90
-100
3
4
5
VOUT (VPP)
12
+
V = +2.5V
5 MHz
-60
0
1
2
3
4
5
VOUT (VPP)
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Typical Performance Characteristics (continued)
At TJ = 25°C, AV = +1 (RF = 0Ω), otherwise RF = 2 kΩ for AV ≠ +1, unless otherwise specified.
HD3
vs.
Output Swing
THD
vs.
Output Swing
-30
-20
-30
+
V = +2.5V
5 MHz
-50
-50
-
5 MHz
V = -2.5V
THD (dBc)
AV = +2
-60
RL = 150:
-70
1 MHz
+
V = +2.5V
-
-60
V = -2.5V
AV = -1
-70
RL = 1 k:
1 MHz
-80
500 kHz
-80
500 kHz
-90
-90
-100
100 kHz
100 kHz
-100
-110
0
1
2
3
4
0
5
1
2
3
4
5
OUTPUT SWING (VPP)
VOUT (VPP)
Settling Time
vs.
Input Step Amplitude
(Output Slew and Settle Time)
Input Noise
vs.
Frequency
1000
140
PRODUCT PREVIEW
HD3 (dBc)
10 MHz
-40
10 MHz
-40
1000
+
-
VOLTAGE NOISE (nV/ Hz)
SETTLING TIME (ns)
120
100 FALLING, 0.1%
80
60
RISING, 0.1%
40
AV = -1
V = -2.5V
100
100
VOLTAGE NOISE
10
10
CURRENT NOISE (pA/ Hz)
V = +2.5V
+
20
V = +2.5V
-
V = -2.5V
0
1
10
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
CURRENT NOISE
100
1k
10k
100k
1M
1
10M
FREQUENCY (Hz)
OUTPUT SWING (VPP)
VOS
vs.
VOUT
VOS
vs.
VOUT
6.0
6.0
+
+
V = +2.5V
V = +2.5V
-
V = -2.5V
4.0
-
V = -2.5V
4.0
RL = 150:
RL = 1 k:
-40°C
2.0
25°C
VOS (mV)
VOS (mV)
2.0
0
-2.0
125°C
-40°C
25°C
0
-2.0
125°C
-4.0
-4.0
-6.0
-2.5 -2.0 -1.5 -1.0 -0.5 0 0.5 1.0 1.5 2.0 2.5
-6.0
-2.5 -2.0 -1.5 -1.0 -0.5 0 0.5 1.0 1.5 2.0 2.5
VOUT (V)
VOUT (V)
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Typical Performance Characteristics (continued)
At TJ = 25°C, AV = +1 (RF = 0Ω), otherwise RF = 2 kΩ for AV ≠ +1, unless otherwise specified.
VOS
vs.
VCM
VOS
vs.
VS (pnp)
0.3
0.3
-40°C
-40°C
0.2
0.2
0.1
VOS (mV)
VOS (mV)
0.1
25°C
0
-0.1
-0.2
125°C
-0.3
0
25°C
-
-0.1 V = -0.5V
+
VS = V - V
-0.2 VCM = 0V
-0.4
+
V = +2.5V
-0.5
-0.3
-
125°C
V = -2.5V
-0.6
-0.5
-0.4
0.5
1.5
2.5
3.5
4.5
5.5
2
3
4
5
6
7
8
9
10 11 12
VS (V)
VCM (V)
VOS
vs.
VS (npn)
VOS
vs.
IOUT
0.3
0.6
PRODUCT PREVIEW
+
V = +2.5V
-40°C
0.2
-
0.4
0.1
-40°C
V = -2.5V
0.2
VOS (mV)
VOS (mV)
25°C
0
125°C
-0.1
-0.2
125°C
-
VS = V - V
-0.3
25°C
-0.2
-0.4
+
V = +0.5V
+
0
-0.6
VCM = 0V
-0.4
2
3
4
5
6
7
8
9
-0.8
-40 -30 -20 -10
10 11 12
0
10
VS (V)
IOUT (mA)
VOS Distribution (pnp and npn)
IB
vs.
VS (pnp)
9
20
40
-1.0
-
8
V = -0.5V
+
-
VS = V - V
7
VCM = 0V
6
25°C
IBIAS (PA)
RELATIVE FREQUENCY (%)
30
5
4
-1.5
-40°C
3
125°C
2
1
-0.
7
-0. 0
60
-0.
5
-0. 0
40
-0.
30
-0.
20
-0.
10
0
0 .1
0
0.2
0
0.3
0
0.4
0
0.5
0
0.6
0
0.7
0
0
-2.0
0
2
4
6
8
10
12
VS (V)
VOS (mV)
14
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Typical Performance Characteristics (continued)
At TJ = 25°C, AV = +1 (RF = 0Ω), otherwise RF = 2 kΩ for AV ≠ +1, unless otherwise specified.
IB
vs.
VS (npn)
IS
vs.
VS
1.8
1.5
+
V = +0.5V
VS = V+ - V
1.6
VCM = 0V
1.4
125°C
25°C
1.2
125°C
IS (mA)
IBIAS (PA)
-
25°C
1.0
-40°C
1.0
0.8
-
0.6
V = -0.5V
0.4
VS = V - V
-40°C
+
-
VCM = 0.5V
2
4
8
6
10
0.2
0
12
2
4
VS (V)
VOUT
vs.
VS
150
600
+
BELOW V SUPPLY
RL = 1 k: to
200
MID-RAIL
VOUT (mV)
VOUT (mV)
BELOW V SUPPLY
400
50
0
25°C
125°C
50
RL = 150: to
MID-RAIL
0
-40°C
400
VOLTAGE VOUT IS
125°C
VOLTAGE VOUT IS
-
-
ABOVE V SUPPLY
2
4
6
8
10
600
12
ABOVE V SUPPLY
2
4
6
8
10
12
VS (V)
VS (V)
VOUT
vs.
VS
Closed Loop Output Impedance
vs.
Frequency AV = +1
1000
20
V = +2.5V
ABOVE V SUPPLY
V = -2.5V
-
OUTPUT IMPEDANCE (:)
-
V = 0V
25
RL = 150: to GND
-40°C
+
VOLTAGE VOUT IS
-
VOUT (mV)
25°C
200
100
150
12
VOLTAGE VOUT IS
+
-40°C
10
VOUT
vs.
VS
VOLTAGE VOUT IS
100
8
6
VS (V)
PRODUCT PREVIEW
0.5
0
30
25°C
35
100
10
1
0.1
125°C
40
0
2
4
6
8
10
12
+
0.01
0.001
0.01
0.1
1
10
100
FREQUENCY (MHz)
V (V)
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Typical Performance Characteristics (continued)
At TJ = 25°C, AV = +1 (RF = 0Ω), otherwise RF = 2 kΩ for AV ≠ +1, unless otherwise specified.
PSRR
vs.
Frequency
PSRR
vs.
Frequency
120
120
100
100
-PSRR
-PSRR
80
PSRR (dB)
PSRR (dB)
80
+PSRR
60
40
20
+PSRR
60
40
20
+
V = +2.5V
V = -2.5V
0
10 100 1k
+
V = +1.5V
-
-
V = -1.5V
10k 100k 1M
0
10
10M 100M
100
1k
10k 100k 1M
FREQUENCY (Hz)
CMRR
vs.
Frequency
Crosstalk Rejection vs. Frequency (Output to Output)
100
110
PRODUCT PREVIEW
+
+
V = +2.5V
-
V = -2.5V
CROSSTALK REJECTION (dB)
V = +2.5V
100
V = -2.5V
90
CMRR (dB)
80
70
60
50
40
30
0.0001 0.001
0.01
0.1
1
10
100
-
AVCHB = 2V/V
80
70
60
100k
1M
100M
50 mV/DIV
Small Signal Step Response
+
V = +2.5V
+
V = +1.5V
-
-
V = -1.5V
A = +1
V = -2.5V
A = +1
VOUT = 0.2V
VOUT = 0.2V
RL = 1 k:
RL = 1 k:
25 ns/DIV
25 ns/DIV
Small Signal Step Response
50 mV/DIV
Small Signal Step Response
50 mV/DIV
10M
FREQUENCY (Hz)
Small Signal Step Response
50 mV/DIV
VOUTCHA = 2 VPP
90
FREQUENCY (MHz)
+
V = +5V
-
+
V = +2.5V
-
V = -5V
A = +1
V = -2.5V
A = -1
VOUT = 0.2V
VOUT = 0.2V
RL = 1 k:
RL = 1 k:
25 ns/DIV
16
10M 100M
FREQUENCY (Hz)
25 ns/DIV
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SNOSC78A – JUNE 2012 – REVISED NOVEMBER 2012
Typical Performance Characteristics (continued)
At TJ = 25°C, AV = +1 (RF = 0Ω), otherwise RF = 2 kΩ for AV ≠ +1, unless otherwise specified.
Small Signal Step Response
50 mV/DIV
+
V = +1.5V
+
V = +5V
-
-
V = -5V
A = -1
V = -1.5V
A = -1
VOUT = 0.2V
VOUT = 0.2V
RL = 1 k:
RL = 1 k:
25 ns/DIV
25 ns/DIV
Small Signal Step Response
50 mV/DIV
50 mV/DIV
Small Signal Step Response
+
V = +2.5V
+
V = +1.5V
-
-
V = -2.5V
A = +2
V = -1.5V
A = +2
VOUT = 0.2V
VOUT = 0.2V
RL = 150:
RL = 150:
25 ns/DIV
25 ns/DIV
Large Signal Step Response
500 mV/DIV
50 mV/DIV
Small Signal Step Response
+
V = +5V
+
V = +2.5V
-
-
V = -5V
A = +2
V = -2.5V
A = +1
VOUT = 0.2V
VOUT = 2V
RL = 150:
RL = 1 k:
25 ns/DIV
50 ns/DIV
Large Signal Step Response
Overload Recovery Waveform
6
+
VOUT
V = +5V
4
-
V = -5V
A = +5
2
2V/DIV
500 mV/DIV
PRODUCT PREVIEW
50 mV/DIV
Small Signal Step Response
+
V = +2.5V
-
0
V = -2.5V
A = +2
-2
VOUT = 2V
-4
VIN
RL = 150:
-6
50 ns/DIV
100 ns/DIV
Application Information
The LMH6619Q is based on National Semiconductor’s proprietary VIP10 dielectrically isolated bipolar process.
This device family architecture features the following:
• Complimentary bipolar devices with exceptionally high ft (∼8 GHz) even under low supply voltage (2.7V) and
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•
•
•
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low bias current.
Common emitter push-push output stage. This architecture allows the output to reach within millivolts of either
supply rail.
Consistent performance from any supply voltage (2.7V - 11V) with little variation with supply voltage for the most
important specifications (e.g. BW, SR, IOUT.)
Significant power saving compared to competitive devices on the market with similar performance.
With 3V supplies and a common mode input voltage range that extends beyond either supply rail, the
LMH6619Q is well suited to many low voltage/low power applications. Even with 3V supplies, the −3 dB BW (at
AV = +1) is typically 120 MHz.
The LMH6619Q is designed to avoid output phase reversal. With input over-drive, the output is kept near the
supply rail (or as close to it as mandated by the closed loop gain setting and the input voltage). Figure 3 shows
the input and output voltage when the input voltage significantly exceeds the supply voltages.
4
V
VIN
+
3
2
1 V/DIV
1
0
VOUT
PRODUCT PREVIEW
-1
-2
-3
-
V
-4
2 Ps/DIV
Figure 3. Input and Output Shown with CMVR Exceeded
SINGLE TO DIFFERENTIAL ADC DRIVER
Figure 4 shows the LMH6619Q used to drive a differential ADC with a single-ended input. The ADC121S625 is a
fully differential 12-bit ADC. Table 1 shows the performance data of the LMH6619Q and the ADC121S625.
+
V
V
560:
10 PF
+
0.1 PF
10 PF
-
33:
+
V
LMH6619
+
INPUT
220 pF
0.1 PF
560:
560:
10 PF
560:
+
V
560:
-
ADC121S625
33:
LMH6619
+
220 pF
560:
Figure 4. LMH6619Q Driving an ADC121S625
Table 1. Performance Data for the Single to Differential ADC Driver
18
Parameter
Measured Value
Signal Frequency
10 kHz
Signal Amplitude
2.5V
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Table 1. Performance Data for the Single to Differential ADC Driver (continued)
Parameter
Measured Value
SINAD
67.9 dB
SNR
68.29 dB
THD
−78.6 dB
SFDR
75.0 dB
ENOB
11.0 bits
DIFFERENTIAL ADC DRIVER
Its low noise and wide bandwidth make the LMH6619Q an excellent choice for driving a 12-bit ADC. Figure 5
shows the LMH6619Q driving an ADC121S705. The ADC121S705 is a fully differential 12-bit ADC.The
LMH6619Q is set up in a 2nd order multiple-feedback configuration with a gain of −1. The −3 dB point is at 500
kHz and the −0.01 dB point is at 100 kHz. The 22Ω resistor and 390 pF capacitor form an antialiasing filter for
the ADC121S705. The capacitor also stores and delivers charge to the switched capacitor input of the ADC. The
capacitive load on the LMH6619Q created by the 390 pF capacitor is decreased by the 22Ω resistor. Table 2
shows the performance data.
1 PF
549:
549:
PRODUCT PREVIEW
+IN
150 pF
1.24 k:
+
V
V
1 nF
+
0.1 PF
10 PF
+
V
14.3 k:
-
22:
LMH6619
0.1 PF
+
5.6 PF
10 PF
390 pF
0.1 PF
14.3 k:
ADC121S705
1 PF
549:
549:
22:
-IN
390 pF
150 pF
1.24 k:
+
V
V
1 nF
+
0.1 PF
14.3 k:
10 PF
LMH6619
+
5.6 PF
0.1 PF
14.3 k:
Figure 5. LMH6619Q Driving an ADC121S705
Table 2. Performance Data for the Differential ADC Driver
Parameter
Measured Value
Signal Frequency
100 kHz
SINAD
71.5 dB
SNR
71.87 dB
THD
−82.4 dB
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LMH6619Q
SNOSC78A – JUNE 2012 – REVISED NOVEMBER 2012
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Table 2. Performance Data for the Differential ADC Driver (continued)
Parameter
Measured Value
SFDR
90.97 dB
ENOB
11.6 bits
DC LEVEL SHIFTING
PRODUCT PREVIEW
Often a signal must be both amplified and level shifted while using a single supply for the op amp. The circuit in
Figure 6 can do both of these tasks. The procedure for specifying the resistor values is as follows.
1. Determine the input voltage.
2. Calculate the input voltage midpoint, VINMID = VINMIN + (VINMAX – VINMIN)/2.
3. Determine the output voltage needed.
4. Calculate the output voltage midpoint, VOUTMID = VOUTMIN + (VOUTMAX – VOUTMIN)/2.
5. Calculate the gain needed, gain = (VOUTMAX – VOUTMIN)/(VINMAX – VINMIN)
6. Calculate the amount the voltage needs to be shifted from input to output, ΔVOUT = VOUTMID – gain x VINMID.
7. Set the supply voltage to be used.
8. Calculate the noise gain, noise gain = gain + ΔVOUT/VS.
9. Set RF.
10. Calculate R1, R1 = RF/gain.
11. Calculate R2, R2 = RF/(noise gain-gain).
12. Calculate RG, RG= RF/(noise gain – 1).
Check that both the VIN and VOUT are within the voltage ranges of the LMH6619Q.
The following example is for a VIN of 0V to 1V with a VOUT of 2V to 4V.
1. VIN = 0V to 1V
2. VINMID = 0V + (1V – 0V)/2 = 0.5V
3. VOUT = 2V to 4V
4. VOUTMID = 2V + (4V – 2V)/2 = 3V
5. Gain = (4V – 2V)/(1V – 0V) = 2
6. ΔVOUT = 3V – 2 x 0.5V = 2
7. For the example the supply voltage will be +5V.
8. Noise gain = 2 + 2/5V = 2.4
9. RF = 2 kΩ
10. R1 = 2 kΩ/2 = 1 kΩ
11. R2 = 2 kΩ/(2.4-2) = 5 kΩ
12. RG = 2 kΩ/(2.4 – 1) = 1.43 kΩ
V
+
+
V
R2
R1
VIN
+
LMH6619Q
VOUT
-
RG
RF
Figure 6. DC Level Shifting
20
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4th ORDER MULTIPLE FEEDBACK LOW-PASS FILTER
Figure 7 shows the LMH6619Q used as the amplifier in a multiple feedback low pass filter. This filter is set up to
have a gain of +1 and a −3 dB point of 1 MHz. Values can be determined by using the WEBENCH® Active Filter
Designer found at amplifiers.national.com.
1.05 k:
1.02 k:
150 pF
62 pF
+
V
+
V
0.1 PF
1.05 k:
1 PF
523:
0.1 PF
-
INPUT
330 pF
1.02 k:
LMH6619
-
+
LMH6619
820 pF
0.1 PF
1 PF
510:
OUTPUT
+
1 PF
0.1 PF
1 PF
-
V
-
Figure 7. 4th Order Multiple Feedback Low-Pass Filter
CURRENT SENSE AMPLIFIER
With it’s rail-to-rail input and output capability, low VOS, and low IB the LMH6619Q is an ideal choice for a current
sense amplifier application. Figure 8 shows the schematic of the LMH6619Q set up in a low-side sense
configuration which provides a conversion gain of 2V/A. Voltage error due to VOS can be calculated to be VOS x
(1 + RF/RG) or 0.6 mV x 21 = 12.6 mV. Voltage error due to IO is IO x RF or 0.26 µA x 1 kΩ = 0.26 mV. Hence
total voltage error is 12.6 mV + 0.26 mV or 12.86 mV which translates into a current error of 12.86 mV/(2 V/A) =
6.43 mA.
+5V
0A to 1A
51:
+
1 k:
0.1:
LMH6619Q
51:
1 k:
Figure 8. Current Sense Amplifier
TRANSIMPEDANCE AMPLIFIER
By definition, a photodiode produces either a current or voltage output from exposure to a light source. A
Transimpedance Amplifier (TIA) is utilized to convert this low-level current to a usable voltage signal. The TIA
often will need to be compensated to insure proper operation.
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PRODUCT PREVIEW
V
LMH6619Q
SNOSC78A – JUNE 2012 – REVISED NOVEMBER 2012
www.ti.com
CF
RF
VS
CIN
CPD
LMH6619Q
+
Figure 9. Photodiode Modeled with Capacitance Elements
Figure 9 shows the LMH6619Q modeled with photodiode and the internal op amp capacitances. The LMH6619Q
allows circuit operation of a low intensity light due to its low input bias current by using larger values of gain (RF).
The total capacitance (CT) on the inverting terminal of the op amp includes the photodiode capacitance (CPD) and
the input capacitance of the op amp (CIN). This total capacitance (CT) plays an important role in the stability of
the circuit. The noise gain of this circuit determines the stability and is defined by:
NG =
1 + sRF (CT + CF)
1 + sCFRF
PRODUCT PREVIEW
Where, fZ #
(1)
1
1
and fP =
2SRFCF
2SRFCT
(2)
OP AMP OPEN
LOOP GAIN
GAIN (dB)
I-V GAIN (:)
NOISE GAIN (NG)
1 + sRF (CT + CF)
1 + sRFCF
1+
CIN
CF
0 dB
FREQUENCY
fz #
1
2SRFCT
fP =
1
GBWP
2SRFCF
Figure 10. Bode Plot of Noise Gain Intersecting with Op Amp Open-Loop Gain
Figure 10 shows the bode plot of the noise gain intersecting the op amp open loop gain. With larger values of
gain, CT and RF create a zero in the transfer function. At higher frequencies the circuit can become unstable due
to excess phase shift around the loop.
A pole at fP in the noise gain function is created by placing a feedback capacitor (CF) across RF. The noise gain
slope is flattened by choosing an appropriate value of CF for optimum performance.
Theoretical expressions for calculating the optimum value of CF and the expected −3 dB bandwidth are:
CF =
CT
2SRF(GBWP)
(3)
GBWP
f-3 dB = 2SR C
F T
(4)
Equation 4 indicates that the −3 dB bandwidth of the TIA is inversely proportional to the feedback resistor.
Therefore, if the bandwidth is important then the best approach would be to have a moderate transimpedance
gain stage followed by a broadband voltage gain stage.
22
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Table 3 shows the measurement results of the LMH6619Q with different photodiodes having various
capacitances (CPD) and a feedback resistance (RF) of 1 kΩ.
Table 3. TIA (Figure 1) Compensation and Performance Results
CPD
CT
CF
(pF)
(pF)
(pF)
22
24
7.7
47
49
100
222
CF
f −3 dB CAL
f −3 dB MEAS
Peaking
(pF)
(MHz)
(MHz)
(dB)
5.6
23.7
20
0.9
10.9
10
16.6
15.2
0.8
102
15.8
15
11.5
10.8
0.9
224
23.4
18
7.81
8
2.9
CAL
USED
Figure 11 shows the frequency response for the various photodiodes in Table 3.
6
0
CPD = 22 pF,
-3
CF = 10 pF
-6
-9
-12
CF = 5.6 pF
CPD = 47 pF,
CPD = 100 pF,
CF = 15 pF
-15
CPD = 222 pF,
CF = 18 pF
-18
100k
1M
10M
100M
1G
FREQUENCY (Hz)
Figure 11. Frequency Response for Various Photodiode and Feedback Capacitors
When analyzing the noise at the output of the TIA, it is important to note that the various noise sources (i.e. op
amp noise voltage, feedback resistor thermal noise, input noise current, photodiode noise current) do not all
operate over the same frequency band. Therefore, when the noise at the output is calculated, this should be
taken into account. The op amp noise voltage will be gained up in the region between the noise gain’s zero and
pole (fZ and fP in Figure 10). The higher the values of RF and CT, the sooner the noise gain peaking starts and
therefore its contribution to the total output noise will be larger. It is obvious to note that it is advantageous to
minimize CIN by proper choice of op amp or by applying a reverse bias across the diode at the expense of
excess dark current and noise.
DIFFERENTIAL CABLE DRIVER FOR NTSC VIDEO
The LMH6619Q can be used to drive an NTSC video signal on a twisted-pair cable. Figure 12 shows the
schematic of a differential cable driver for NTSC video. This circuit can be used to transmit the signal from a
camera over a twisted pair to a monitor or display located a distance. C1 and C2 are used to AC couple the video
signal into the LMH6619Q. The two amplifiers of the LMH6619Q are set to a gain of 2 to compensate for the 75Ω
back termination resistors on the outputs. The LMH6619Q is set to a gain of 1. Because of the DC bias the
output of the LMH6619Q is AC coupled. Most monitors and displays will accept AC coupled inputs.
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23
PRODUCT PREVIEW
NORMALIZED I-V GAIN (dB)
3
LMH6619Q
SNOSC78A – JUNE 2012 – REVISED NOVEMBER 2012
www.ti.com
+10V
C5
0.1 PF
+10V
C2
47 PF
+
J1
VIDEO
INPUT
8
3
R5
10 k:
GND
2
+
-
1
VOUT
R16
3.01 k:
R10
75:
C7
47 PF
+
R9
3.01 k:
+
C1
47 PF
R7
3.01 k:
C3
20 PF
R8
3 k:
+
GND
R3
1.50 k:
6
5
PRODUCT PREVIEW
R2
3.3 k:
R12
150:
-
U1B
7
4
5
-
+
V
LMH6619Q
3
+ V
2
R14
3.01 k:
+ C9
10 PF
GND
U2
1
C10
47 PF
+
J2
VIDEO
OUTPUT
GND
R15
3.01 k: GND
R11
75:
LMH6619Q
VOUT
+ V
4
C4
0.1 PF
GND
R13
3.01 k:
TWISTED-PAIR
R1
75:
GND
C8
0.1 PF
U1A
+V
LMH6619Q
GND
+10V
GND
GND
R4
10 k:
+ C6
10 PF
GND
GND
+10V
R6
10 k:
GND
GND
Figure 12. Differential Cable Driver
24
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PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
LMH6619QMAK/NOPB
ACTIVE
SOIC
D
8
95
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 105
LMH66
19QMA
LMH6619QMAKE/NOPB
ACTIVE
SOIC
D
8
250
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 105
LMH66
19QMA
LMH6619QMAKX/NOPB
ACTIVE
SOIC
D
8
2500
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 105
LMH66
19QMA
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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