LMH6655MAX

Product Folder Sample & Buy Support & Community Tools & Software Technical Documents LMH6654, LMH6655 SNOS956E – JUNE 2001 – REVISED AUGUST 2014 LMH6654, LMH6655 Single and Dual Low Power, 250 MHz, Low Noise Amplifiers 1 Features 3 Description • The LMH6654 and LMH6655 single and dual high speed voltage feedback amplifiers are designed to have unity-gain stable operation with a bandwidth of 250 MHz. They operate from ±2.5 V to ±6 V and each channel consumes only 4.5 mA. The amplifiers feature very low voltage noise and wide output swing to maximize signal-to-noise ratio, and possess a true single supply capability with input common mode voltage range extending 150 mV below negative rail and within 1.3 V of the positive rail. The high speed and low power combination of the LMH6654 and LMH6655 make these products an ideal choice for many portable, high speed applications where power is at a premium. 1 • • • • • • • • • • (VS = ±5 V, TJ = 25 °C, Typical Values Unless Specified) Voltage Feedback Architecture Unity Gain Bandwidth 250 MHz Supply Voltage Range ±2.5V to ±6V Slew Rate 200 V/µsec Supply Current 4.5 mA/channel Input Common Mode Voltage −5.15V to +3.7V Output Voltage Swing (RL = 100 Ω) −3.6V to 3.4V Input Voltage Noise 4.5 nV/√Hz Input Current Noise 1.7 pA/√Hz Settling Time to 0.01% 25 ns 2 Applications • • • • • • ADC Drivers Consumer Video Active Filters Pulse Delay Circuits xDSL Receiver Pre-amps The LMH6654 and LMH6655 are built on TI’s Advance VIP10™ (Vertically Integrated PNP) complementary bipolar process. The LMH6654 is packaged in 5-Pin SOT-23 and 8Pin SOIC. The LMH6655 is packaged in 8-Pin VSSOP (DGK) and 8-Pin SOIC. Device Information(1) PART NUMBER PACKAGE BODY SIZE (NOM) LMH6654 SOIC (8) 4.90 mm x 3.91 mm LMH6654 SOT-23 (5) 2.90 mm x 1.60 mm LMH6655 SOIC (8) 4.90 mm x 3.91 mm LMH6655 VSSOP (8) 3.00 mm x 3.00 mm (1) For all available packages, see the orderable addendum at the end of the datasheet. Figure 1. Input Voltage and Curernt Noise vs. Frequency (Vs= ±5V) 100 10 en 10 in 1 100 1k 100k 10k FREQUENCY (Hz) 1M INPUT CURRENT NOISE (pA/ Hz) INPUT VOLTAGE NOISE (nV/ Hz) 100 1 10M 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. LMH6654, LMH6655 SNOS956E – JUNE 2001 – REVISED AUGUST 2014 www.ti.com Table of Contents 1 2 3 4 5 6 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Pin Configuration and Functions ......................... Specifications......................................................... 1 1 1 2 3 4 6.1 6.2 6.3 6.4 6.5 6.6 6.7 4 4 4 4 5 7 9 Absolute Maximum Ratings ...................................... Handling Ratings....................................................... Recommended Operating Conditions....................... Thermal Information .................................................. ±5V Electrical Characteristics ................................... 5V Electrical Characteristics ..................................... Typical Characteristics .............................................. 7 Application and Implementation ........................ 16 7.1 Application Information............................................ 16 7.2 Typical Application .................................................. 16 8 Power Supply Recommendations...................... 20 9 Layout ................................................................... 20 8.1 Power Dissipation ................................................... 20 9.1 Layout Guidelines ................................................... 20 10 Device and Documentation Support ................. 21 10.1 Documentation Support ........................................ 21 10.2 Electrostatic Discharge Caution ............................ 21 10.3 Glossary ................................................................ 21 11 Mechanical, Packaging, and Orderable Information ........................................................... 21 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision D (March 2013) to Revision E Page • Changed data sheet structure and organization. Added, updated, or renamed the following sections: Device Information Table, Application and Implementation; Power Supply Recommendations; Device and Documentation Support; Mechanical, Packaging, and Ordering Information. Deleted Switching Characteristics due to redundancy. ......... 1 • Changed from Junction Temperature Range to "Operating Temperature Range" ................................................................ 4 • Deleted TJ = 25°C................................................................................................................................................................... 5 • Deleted TJ = 25°C .................................................................................................................................................................. 7 Changes from Revision C (March 2013) to Revision D • 2 Page Changed layout of National Data Sheet to TI format ........................................................................................................... 19 Submit Documentation Feedback Copyright © 2001–2014, Texas Instruments Incorporated Product Folder Links: LMH6654 LMH6655 LMH6654, LMH6655 www.ti.com SNOS956E – JUNE 2001 – REVISED AUGUST 2014 5 Pin Configuration and Functions 5-Pin (LMH6654) Package DBV Top View 8-Pin (LMH6654) Package D Top View 5 1 OUTPUT V 1 + 8-Pin (LMH6655) SOIC and VSSOP (DGK) Top View 8 N/C 1 N/C 8 + V OUT A A -IN V - 2 7 - + V 2 - + 7 -IN A 2 + +IN - 3 6 + OUT B OUTPUT 3 6 +IN A +IN 4 3 -IN - 4 + N/C V V - -IN B B 5 4 5 +IN B Pin Functions PIN NAME LMH6654 LMH6655 I/O DESCRIPTION DBV D DGK -IN 4 2 I Inverting Input +IN 3 3 I Non-inverting Input -IN A 2 I ChA Inverting Input +IN A 3 I ChA Non-inverting Input -IN B 6 I ChB Inverting Input I ChB Non-inverting Input +IN B 5 N/C 1, 5, 8 OUT A OUT B –– No Connection 1 O ChA Output 7 O ChB Output O Output OUTPUT 1 6 V- 2 4 4 I Negative Supply V+ 5 7 8 I Positive Supply Copyright © 2001–2014, Texas Instruments Incorporated Product Folder Links: LMH6654 LMH6655 Submit Documentation Feedback 3 LMH6654, LMH6655 SNOS956E – JUNE 2001 – REVISED AUGUST 2014 www.ti.com 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN VIN Differential Output Short Circuit Duration See Voltage at Input pins Soldering Information (1) (2) (3) UNIT ±1.2 V (2) Supply Voltage (V+ − V−) Junction Temperature MAX (3) 13.2 V V+ +0.5 V- -0.5 V 150 °C Infrared or Convection (20 sec.) 235 °C Wave Soldering (10 sec.) 260 °C Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. Continuous short circuit operation at elevated ambient temperature can result in exceeding the maximum allowed junction temperature at 150°C. The maximum power dissipation is a function of TJ(MAX), RθJA and TA. The maximum allowable power dissipation at any ambient temperature is PD = (TJ(MAX) − TA)/RθJA. All numbers apply for packages soldered directly onto a PC board. 6.2 Handling Ratings Tstg Storage temperature range V(ESD) (1) (2) (3) Electrostatic discharge (1) MIN MAX UNIT −65 150 °C Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins (2) 2000 Machine model (MM) (3) 200 V Human body model, 1.5 kΩ in series with 100 pF. Machine model: 0Ω in series with 100 pF. JEDEC document JEP155 states that 2000-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 200-V MM allows safe manufacturing with a standard ESD control process. 6.3 Recommended Operating Conditions (1) over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT Supply Voltage (V+ - V−) ±2.5 ±6.0 V Operating Temperature Range −40 85 °C (1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but specific performance is not ensured. For ensured specifications and the test conditions, see the Electrical Characteristics Table. 6.4 Thermal Information THERMAL METRIC (1) RθJA (1) 4 Junction-to-ambient thermal resistance SOIC (D) VSSOP (DGK) SOT-23 (D) 8 PINS 8 PINS 5 PINS 172 235 265 UNIT °C/W For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953. Submit Documentation Feedback Copyright © 2001–2014, Texas Instruments Incorporated Product Folder Links: LMH6654 LMH6655 LMH6654, LMH6655 www.ti.com SNOS956E – JUNE 2001 – REVISED AUGUST 2014 6.5 ±5V Electrical Characteristics Unless otherwise specified, all limits ensured for V+ = +5V, V− = −5V, VCM = 0V, AV = +1, RF = 25Ω for gain = +1, RF = 402Ω for gain ≥ +2, and RL = 100Ω. Boldface limits apply at the temperature extremes. PARAMETER TEST CONDITIONS MIN (1) TYP (2) MAX (1) UNIT DYNAMIC PERFORMANCE fCL Close Loop Bandwidth GBWP φm AV = +1 250 AV = +2 130 AV = +5 52 AV = +10 26 Gain Bandwidth Product AV ≥ +5 Bandwidth for 0.1 dB Flatness AV +1 Phase Margin (3) AV = +1, VIN = 2 VPP MHz 260 MHz 18 MHz 50 deg 200 V/µs 25 ns SR Slew Rate tS Settling Time 0.01% 15 ns tr Rise Time AV = +1, 0.2V Step 1.4 ns tf Fall Time AV = +1, 0.2V Step 1.2 ns AV = +1, 2V Step 0.1% DISTORTION and NOISE RESPONSE en Input Referred Voltage Noise f ≥ 0.1 MHz 4.5 nV/√Hz in Input-Referred Current Noise f ≥ 0.1 MHz 1.7 pA/√Hz Second Harmonic Distortion AV = +1, f = 5 MHz −80 Third Harmonic Distortion VO = 2 VPP, RL = 100Ω −85 Xt Crosstalk (for LMH6655 only) Input Referred, 5 MHz, Channel-to-Channel −80 DG Differential Gain AV = +2, NTSC, RL = 150Ω 0.01% DP Differential Phase AV = +2, NTSC, RL = 150Ω 0.025 dBc dB deg INPUT CHARACTERISTICS VOS Input Offset Voltage VCM = 0V TC VOS Input Offset Average Drift VCM = 0V IB Input Bias Current VCM = 0V IOS Input Offset Current VCM = 0V RIN Input Resistance −3 −4 (4) ±1 3 4 6 −1 −2 Common Mode mV µV/°C 5 12 18 µA 0.3 1 2 µA 4 MΩ Differential Mode 20 kΩ Common Mode 1.8 CIN Input Capacitance CMRR Common Mode Rejection Ration Input Referred, VCM = 0V to −5V CMVR Input Common- Mode Voltage Range CMRR ≥ 50 dB Differential Mode pF 1 70 68 90 −5.15 3.5 3.7 60 58 67 dB −5.0 V TRANSFER CHARACTERISTICS AVOL (1) (2) (3) (4) VO = 4 VPP, RL = 100Ω Large Signal Voltage Gain dB All limits are specified by testing or statistical analysis. Typical Values represent the most likely parametric norm. Slew rate is the slower of the rising and falling slew rates. Slew rate is rate of change from 10% to 90% of output voltage step. Offset voltage average drift is determined by dividing the change in VOS at temperature extremes into the total temperature change. Copyright © 2001–2014, Texas Instruments Incorporated Product Folder Links: LMH6654 LMH6655 Submit Documentation Feedback 5 LMH6654, LMH6655 SNOS956E – JUNE 2001 – REVISED AUGUST 2014 www.ti.com ±5V Electrical Characteristics (continued) Unless otherwise specified, all limits ensured for V+ = +5V, V− = −5V, VCM = 0V, AV = +1, RF = 25Ω for gain = +1, RF = 402Ω for gain ≥ +2, and RL = 100Ω. Boldface limits apply at the temperature extremes. PARAMETER TEST CONDITIONS MIN (1) TYP (2) 3.4 3.2 3.6 MAX (1) UNIT OUTPUT CHARACTERISTICS VO ISC Output Swing High No Load Output Swing Low No Load Output Swing High RL = 100Ω Output Swing Low RL = 100Ω Short Circuit Current IOUT Output Current RO Output Resistance (5) −3.9 3.2 3.0 V 3.4 −3.6 Sourcing, VO = 0V ΔVIN = 200 mV 145 130 280 Sinking, VO = 0V ΔVIN = 200 mV 100 80 185 Sourcing, VO = +3V −3.7 −3.5 −3.4 −3.2 mA 80 Sinking, VO = −3V 120 AV = +1, f