LMH6657, LMH6658
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SNOSA35E – MAY 2004 – REVISED OCTOBER 2004
LMH6657/LMH6658 270MHz Single Supply, Single & Dual Amplifiers
Check for Samples: LMH6657, LMH6658
FEATURES
1
•
2
•
•
•
•
•
•
•
•
•
•
VS = 5V, TA = 25°C, RL = 100Ω (Typical values
unless specified)
−3dB BW (AV = +1) 270MHz
Supply voltage range 3V to 12V
Slew rate, (VS = ±5V) 700V/µs
Supply current 6.2mA/amp
Output current +80/−90mA
Input common mode volt. 0.5V beyond V−, 1.7V
from V+
Output voltage swing (RL = 2kΩ) 0.8V from
rails
Input voltage noise 11nV/
Input current noise 2.1pA/
DG error 0.03%
•
•
•
•
•
•
•
DP error 0.10°
THD (5MHz) −55dBc
Settling time (0.1%) 37ns
Fully characterized for 5V, and ±5V
Output overdrive recovery 18ns
Output short circuit protected (1)
No output phase reversal with CMVR exceeded
APPLICATIONS
•
•
•
•
•
(1)
CD/DVD ROM
ADC buffer amp
Portable video
Current sense buffer
Portable communications
Short circuit test is a momentary test. See Note 11.
DESCRIPTION
The LMH6657/6658 are low-cost operational amplifiers that operate from a single supply with input voltage range
extending below the V−. Based on easy to use voltage feedback topology and boasting fast slew rate (700V/µs)
and high speed (140MHz GBWP), the LMH6657 (Single) and LMH6658 (dual) can be used in high speed large
signal applications. These applications include instrumentation, communication devices, set-top boxes, etc.
With a -3dB BW of 100MHz (AV = +2) and DG & DP of 0.03% & 0.10° respectively, the LMH6657/6658 are well
suited for video applications. The output stage can typically supply 80mA into the load with a swing of about 1V
from either rail.
For Industrial applications, the LMH6657/6658 are excellent cost-saving choices. Input referred voltage noise is
low and the input voltage can extend below V− to ease amplification of low level signals that could be at or near
the system ground. With low distortion and fast settling, LMH6657/6658 can provide buffering for A/D and D/A
applications.
The LMH6657/6658 versatility and ease of use is extended even further by offering these high slew rate , high
speed Op Amps in miniature packages such as SOT23-5, SC70, SOIC-8, and MSOP-8. Refer to the Ordering
Information section for packaging options available for each device.
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2004, Texas Instruments Incorporated
LMH6657, LMH6658
SNOSA35E – MAY 2004 – REVISED OCTOBER 2004
www.ti.com
Connection Diagram
SOT23-5/SC70-5 (LMH6657)
5
1
V
OUTPUT
V
-
+
2
-
+
4
3
+IN
-IN
Figure 1. Top View
Figure 2. SOIC-8/MSOP-8 (LMH6658)
1
8
+
V
OUT A
A
2
-
+
7
-IN A
OUT B
3
6
+IN A
+
V
-
-IN B
B
4
5
+IN B
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
2
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SNOSA35E – MAY 2004 – REVISED OCTOBER 2004
Absolute Maximum Ratings
(1)
ESD Tolerance
2KV (2)
Human Body Model
Machine Model
200V
(3)
VIN Differential
±2.5V
Output Short Circuit Duration
(4) (5)
,
Input Current
±10mA
Supply Voltage (V+ - V−)
12.6V
+
−
V +0.8V, V −0.8V
Voltage at Input/Output pins
Soldering Information
Infrared or Convection (20 sec.)
235°C
Wave Soldering (10 sec.)
260°C
−65°C to +150°C
Storage Temperature Range
Junction Temperature
(1)
(6)
+150°C
Note 1: Absolute maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions
for which the device is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test
conditions, see the Electrical Characteristics.
Human body model, 1.5kΩ in series with 100pF.
Machine Model, 0Ω in series with 200pF.
Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in
exceeding the maximum allowed junction temperature of 150°C.
Output short circuit duration is infinite for VS < 6V at room temperature and below. For VS > 6V, allowable short circuit duration is 1.5ms.
The maximum power dissipation is a function of TJ(MAX), θJA, and TA. The maximum allowable power dissipation at any ambient
temperature is PD = (TJ(MAX) - TA)/ θJA . All numbers apply for packages soldered directly onto a PC board.
(2)
(3)
(4)
(5)
(6)
Operating Ratings
(1)
Supply Voltage (V+ – V−)
3V to 12V
Operating Temperature Range
(2)
−40°C to +85°C
Package Thermal Resistance (θJA) (2)
(1)
(2)
SC70
478°C/W
SOT23–5
265°C/W
MSOP-8
235°C/W
SOIC-8
190°C/W
Note 1: Absolute maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions
for which the device is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test
conditions, see the Electrical Characteristics.
The maximum power dissipation is a function of TJ(MAX), θJA, and TA. The maximum allowable power dissipation at any ambient
temperature is PD = (TJ(MAX) - TA)/ θJA . All numbers apply for packages soldered directly onto a PC board.
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5V Electrical Characteristics
Unless otherwise specified, all limits guaranteed for at TJ = 25°C, V+ = 5V, V− = 0V, VCM = VO = V+/2, and RL = 100Ω (or as
specified) tied to V+/2. Boldface limits apply at the temperature extremes.
Symbol
Parameter
Conditions
GB
Gain Bandwidth Product
VOUT < 200mVPP
SSBW
−3dB BW
AV = +1, VOUT = 200mVPP
Min
(1)
Typ
(2)
Max
(1)
140
220
MHz
270
AV = +2 or −1, VOUT = 200mVPP
100
Units
MHz
GFP
Frequency Response Peaking
AV = +2, VOUT = 200mVPP,
DC to 100MHz
1.5
GFR
Frequency Response Rolloff
AV = +2, VOUT = 200mVPP,
DC to 100MHz
0.5
LPD1°
1° Linear Phase Deviation
AV = +2, VOUT = 200mVPP, ±1°
30
MHz
GF0.1dB
0.1dB Gain Flatness
AV = +2, ±0.1dB, VOUT = 200mVPP
13
MHz
PBW
Full Power Bandwidth
−1dB, VOUT = 3VPP, AV = −1
55
MHz
DG
Differential Gain
NTSC, VCM = 2V, RL = 150Ω to V+/2,
Pos. Video Only
0.03
%
DP
Differential Phase
NTSC, VCM = 2V, RL=150Ω to V+/2 Pos.
Video Only
0.1
deg
AV = +2, VOUT = 500mVPP
3.3
ns
AV = −1, VOUT = 500mVPP
3.4
dB
dB
Time Domain Response
tr
Rise and Fall Time
OS
Overshoot, Undershoot
ts
Settling Time
SR
Slew Rate
(3)
AV = +2, VOUT = 500mVPP
18
%
VO = 2VPP, ±0.1%, RL = 500Ω to V /2,
AV = −1
37
ns
AV = −1, VO = 3VPP (4)
470
(4)
420
+
AV = +2, VO = 3VPP
V/µs
Distortion and Noise Response
HD2
2nd Harmonic Distortion
f = 5MHz, VO = 2VPP, AV = -1
−70
dBc
HD3
3rd Harmonic Distortion
f = 5MHz, VO = 2VPP, AV = -1
−57
dBc
THD
Total Harmonic Distortion
f = 5MHz, VO = 2VPP, AV = -1
−55.5
dBc
Vn
Input-Referred Voltage Noise
f = 100KHz
11
f = 1KHz
19
f = 100KHz
2.1
f = 1KHz
7.5
f = 5MHz, RL (SND) = 100Ω
RCV: RF = RG = 1k
69
In
Input-Referred Current Noise
XTLKA
Cross-Talk Rejection (LMH6658)
nV/
pA/
dB
Static, DC Performance
AVOL
CMVR
VOS
(1)
(2)
(3)
(4)
4
Large Signal Voltage Gain
Input Common-Mode Voltage
Range
VO = 1.25V to 3.75V,
RL = 2k to V+/2
85
95
VO = 1.5V to 3.5V,
RL = 150Ω to V+/2
75
85
VO = 2V to 3V,
RL = 50Ω to V+/2
70
80
−0.2
−0.1
−0.5
3.0
2.8
3.3
CMRR ≥ 50dB
Input Offset Voltage
±1.1
dB
V
±5
±7
mV
All limits are guaranteed by testing or statistical analysis.
Typical values represent the most likely parametric norm.
Slew rate is the "worst case" of the rising and falling slew rates.
Output Swing not limited by Slew Rate limit.
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SNOSA35E – MAY 2004 – REVISED OCTOBER 2004
5V Electrical Characteristics (continued)
Unless otherwise specified, all limits guaranteed for at TJ = 25°C, V+ = 5V, V− = 0V, VCM = VO = V+/2, and RL = 100Ω (or as
specified) tied to V+/2. Boldface limits apply at the temperature extremes.
Symbol
Parameter
Conditions
Min
(1)
Typ
(2)
TC VOS
Input Offset Voltage Average
Drift
(5)
±2
IB
Input Bias Current
(6)
−5
TC IB
Input Bias Current Average Drift
(5)
IOS
Input Offset Current
CMRR
Common Mode Rejection Ratio
Max
(1)
μV/C
−20
−30
0.01
50
VCM Stepped from 0V to 3.0V
+
+PSRR
Positive Power Supply Rejection
Ratio
V = 4.5V to 5.5V, VCM = 1V
IS
Supply Current (per channel)
No load
Units
μA
nA/°C
300
500
nA
72
82
dB
72
82
dB
6.2
8.5
10
mA
Miscellaneous Performance
VOH
Output Swing
High
VOL
Output Swing
Low
IOUT
Output Current
ISC
Output Short CircuitCurrent
(7)
RIN
Common Mode Input Resistance
CIN
Common Mode Input
Capacitance
ROUT
Output Impedance
(5)
(6)
(7)
RL = 2k to V+/2
4.10
3.8
4.25
RL = 150Ω to V+/2
4.00
3.70
4.19
+
RL = 75Ω to V /2
3.85
3.50
4.15
RL = 2k to V+/2
900
1100
800
RL = 150Ω to V+/2
970
1200
870
R L = 75Ω to V+/2
990
1250
885
VOUT = 1V from either rail
±40
+85, −105
+
Sourcing to V /2
100
80
155
Sinking to V+/2
100
80
220
3
1.8
f = 1MHz, AV = +1
0.06
V
mV
mA
mA
MΩ
pF
Ω
Drift determined by dividing the change in parameter at temperature extremes by the total temperature change.
Positive current corresponds to current flowing into the device.
Short circuit test is a momentary test. See Note 11.
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±5V Electrical Characteristics
Unless otherwise specified, all limits guaranteed for at TJ = 25°C, V+ = 5V, V− = −5V, VCM = VO, and RL = 100Ω (or as
specified) tied to 0V. Boldface limits apply at the temperature extremes.
Symbol
Parameter
Conditions
GB
Gain Bandwidth Product
VOUT < 200mVPP
SSBW
−3dB BW
AV = +1, VOUT = 200mVPP
Min
(1)
Typ
(2)
Max
(1)
140
220
MHz
270
AV = +2 or −1, VOUT = 200mVPP
100
Units
MHz
GFP
Frequency Response Peaking
AV = +2, VOUT = 200mVPP,
DC to 100MHz
1.0
GFR
Frequency Response Rolloff
AV = +2, VOUT = 200mVPP,
DC to 100MHz
0.9
LPD1°
1° Linear Phase Deviation
AV = +2, VOUT = 200mVPP, ±1°
30
MHz
GF0.1dB
0.1dB Gain Flatness
AV = +2, ±0.1dB, VOUT = 200mVPP
20
MHz
PBW
Full Power Bandwidth
−1dB, VOUT = 8VPP, AV = −1
30
MHz
DG
Differential Gain
NTSC, RL = 150Ω, Pos. or Neg. Video
0.03
%
DP
Differential Phase
NTSC,RL = 150Ω, Pos. or Neg. Video
0.1
deg
AV = +2, VOUT = 500mVPP
3.3
AV = −1, VOUT = 500mVPP
3.3
dB
dB
Time Domain Response
tr
Rise and Fall Time
ns
OS
Overshoot, Undershoot
AV = +2, VOUT = 500mVPP
16
%
ts
Settling Time
VO = 5VPP, ±0.1%, RL =500Ω,
AV = −1
35
ns
SR
Slew Rate
AV = −1, VO = 8VPP
700
AV = +2, VO = 8VPP
500
(3)
V/µs
Distortion and Noise Response
HD2
2nd Harmonic Distortion
f = 5MHz, VO = 2VPP, AV = -1
−70
dBc
HD3
3rd Harmonic Distortion
f = 5MHz, VO = 2VPP, AV = -1
−57
dBc
THD
Total Harmonic Distortion
f = 5MHz, VO = 2VPP, AV = -1
−55.5
dBc
Vn
Input-Referred Voltage Noise
f = 100KHz
11
f = 1KHz
19
f = 100KHz
2.1
f = 1KHz
7.5
f = 5MHz, RL (SND) = 100Ω
RCV: RF = RG = 1k
69
In
Input-Referred Current Noise
XTLKA
Cross-Talk Rejection (LMH6658)
nV/
pA/
dB
Static, DC Performance
AVOL
Large Signal Voltage Gain
CMVR
Input Common-Mode Voltage
Range
VOS
VO = −3.75V to 3.75V, RL = 2k
87
100
VO = −3.5V to 3.5V, RL = 150Ω
80
90
VO = −3V to 3V, RL = 50Ω
75
85
−5.2
−5.1
−5.5
3.0
2.8
3.3
CMRR ≥ 50dB
Input Offset Voltage
±1.0
TC VOS
Input Offset Voltage Average Drift
(4)
IB
Input Bias Current
(5)
Input Bias Current Average Drift
(4)
TCIB
(1)
(2)
(3)
(4)
(5)
6
±2
−5
0.01
dB
V
±5
±7
mV
μV/C
−20
−30
μA
nA/°C
All limits are guaranteed by testing or statistical analysis.
Typical values represent the most likely parametric norm.
Slew rate is the "worst case" of the rising and falling slew rates.
Drift determined by dividing the change in parameter at temperature extremes by the total temperature change.
Positive current corresponds to current flowing into the device.
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SNOSA35E – MAY 2004 – REVISED OCTOBER 2004
±5V Electrical Characteristics (continued)
Unless otherwise specified, all limits guaranteed for at TJ = 25°C, V+ = 5V, V− = −5V, VCM = VO, and RL = 100Ω (or as
specified) tied to 0V. Boldface limits apply at the temperature extremes.
Symbol
Parameter
Conditions
Min
(1)
Typ
Max
Units
50
300
500
nA
(2)
(1)
IOS
Input Offset Current
CMRR
Common ModeRejection Ratio
VCM Stepped from −5V to 3.0V
75
84
dB
+PSRR
Positive Power Supply Rejection
Ratio
V+ = 4.5V to 5.5V, VCM = −4V
75
82
dB
−PSRR
Negative Power Supply Rejection V− = −4.5V to −5.5V
Ratio
78
85
dB
IS
Supply Current (per channel)
No load
6.5
9.0
11
mA
Miscellaneous Performance
VOH
Output Swing
High
VOL
Output Swing
Low
IOUT
Output Current
ISC
Output Short Circuit Current
(6)
RIN
Common Mode Input Resistance
CIN
Common Mode Input
Capacitance
ROUT
Output Impedance
(6)
RL = 2k
4.10
3.80
4.25
RL = 150Ω
4.00
3.70
4.20
RL = 75Ω
3.85
3.50
4.18
RL = 2k
−4.05
−3.80
−4.19
RL = 150Ω
−3.90
−3.65
−4.05
R L = 75Ω
−3.80
−3.50
−4.00
VOUT = 1V from either rail
±45
+100, −110
Sourcing to Ground
120
100
180
Sinking to Ground
120
100
230
4
1.8
f = 1MHz, AV = +1
0.06
V
V
mA
mA
MΩ
pF
Ω
Short circuit test is a momentary test. See Note 11.
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Typical Performance Characteristics
Non-Inverting Frequency Response,
Gain
Inverting Frequency Response,
Gain
AV = -1
0
AV = +10
-1
-1
AV = -10
-3
GAIN
AV = +5
GAIN
AV = -2
0
AV = +2
-3
AV = -5
AV = +1
-5
-5
VS = ±2.5V
VS = ±2.5V
RL = 100:
-7
10M
100M
FREQUENCY (Hz)
1M
RL = 100:
-7
VOUT = 200mVPP
VOUT = 200mVPP
1M
500M
Non-Inverting Frequency Response, Phase
10M
100M
FREQUENCY (Hz)
Inverting Frequency Response, Phase
0
0
AV = -2
AV = +1
-50
AV = +10
AV = -1
AV = -5
AV = +5
-100
AV = -10
-50
PHASE
PHASE
500M
AV = +2
-150
-100
-150
AV = -1
-200
VS = ±2.5V
-200
VS = ±2.5V
AV = -2
RL = 100:
RL = 100:
VOUT = 200mVPP
VOUT = 200mVPP
1M
10M
100M
FREQUENCY (Hz)
500M
1M
AV = -5
10M
100M
FREQUENCY (Hz)
Open Loop Gain/Phase
vs.
Frequency
500M
Unity Gain Frequency
vs.
VCM
140
VS = ±5V
25°C
RL = 100:
80
60
40
20
GAIN
10
85°C
fu (MHz)
Im = 35.2°
PHASE (°)
GAIN (dB)
130
100
PHASE
-40°C
120
20
0
0
110
133MHz
VS = ±5V
RL = 100:
100k
8
10M
100M
1M
FREQUENCY (Hz)
1G
100
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-5
-4
-3
-2
-1 0 1
VCM (V)
2
3
4
5
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Typical Performance Characteristics (continued)
Phase Margin
vs.
VCM
Output
vs.
Input
45
5
VS = ±5V
VS = ±2.5V, AV = -1
4.5
RL = 100:
40
RL = 100:
4
-40°C
f = 50MHz
f = 40MHz
PM (°)
35
OUTPUT (VPP)
3.5
25°C
30
85°C
f = 30MHz
3
f = 20MHz
2.5
2
1.5
f = 60MHz
25
1
f = 70MHz
0.5
20
f = 80MHz
0
-5
-4
-3
-2
-1
0
3
4
0.5
5
1.5
1
2.5
2
Output
vs.
Input
CMRR
vs.
Frequency
100
f = 20MHz
VS = ±5V
3
3.5
VS = ±5V
90
AV = -1
8
2
INPUT (VPP)
10
9
1
VCM (V)
f = 1MHz
RL = 100:
80
f = 40MHz
6
CMRR (dB)
f = 30MHz
f = 50MHz
5
4
3
70
60
50
40
2
f = 60MHz
f = 70MHz
1
30
f = 80MHz
20
0
1
2
3
5
4
7
6
8
9
1k
10
10k
PSRR
vs.
Frequency
10M
100M
DG/DP
vs.
IRE
90
100
0.03
RF = RG = 750:
+PSRR
0.025
80
RL = 150:
VS = ±5V
NTSC
0.02
70
DG (%)
-PSRR
PSRR (dB)
1M
100k
FREQUENCY (Hz)
INPUT (VPP)
60
50
75
0.015
0.01
50
DG
0.005
40
DP (milli_deg)
OUTPUT (VPP)
7
25
0
DP
30
-0.005
20
10
100
1k
10k 100k
1M
10M 100M
-0.01
-100 -80 -60 -40 -20
FREQUENCY (Hz)
0
0
20 40 60 80 100
IRE (%)
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Typical Performance Characteristics (continued)
Noise
vs.
Frequency
Crosstalk Rejection
vs.
Frequency
120
70
140
60
100
50
80
40
VOLTAGE
30
60
20
40
CURRENT
100
90
CT (dB)
120
NOISE CURRENT (pA/ Hz)
NOISE VOLTAGE (nV/ Hz)
110
0
10
1k
100
60
40
VS = ±5V
SND: RL = 100:
30 RCV = R = R = 1k
F
G
20
100
10k 100k
1M
1k
FREQUENCY (Hz)
0
100k
10k
70
50
10
20
80
FREQUENCY (Hz)
Output Impedance
vs.
Frequency
100M
HD
vs.
VOUT
-40
100
f = 500KHz
AV = +1
AV = -1
-50
VS = ±5V
10
THD (dBc)
1
0.1
THD
RL = 100:
-60
ROUT (:)
10M
HD3
-70
-80
HD2
0.01
-90
0.001
100
-100
1k
10k 100k
1M
0
10M 100M 1G
1
2
3
4
5
6
FREQUENCY (Hz)
VOUT (VPP)
HD
vs.
VOUT
THD
vs.
VOUT
-40
8
7
9
-20
VS = ±2.5V
THD
-45
-30
-50
AV = +2
10MHz, 150:
-40
HD3
THD (dBc)
THD (dBc)
-55
-60
HD2
-65
-70
f = 5MHz
AV = -1
-75
-70
1MHz, 150:
-90
RL = 100:
-85
1MHz, 1k:
-100
0
10
10MHz, 1k:
-60
-80
VS = ±5V
-80
-50
1
2
3
4
5 6
VOUT (VPP)
7
8
9
0
0.5
1
1.5
2
2.5
3
VOUT (VPP)
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SNOSA35E – MAY 2004 – REVISED OCTOBER 2004
Typical Performance Characteristics (continued)
HD
vs.
Frequency
HD
vs.
Frequency
-20
-20
VOUT = 2VPP
VOUT = 5VPP
AV = -1
-30
VS = ±5V
AV = -1
-50
-60
THD
VS = ±5V
-40
RL = 100:
HD (dBc)
HD (dBc)
-40
-30
THD
RL = 100:
-50
-60
HD2
HD2
-70
-70
HD3
-80
-80
HD3
-90
100
1k
10k
-90
100
100k
1k
10k
FREQUENCY (KHz)
FREQUENCY (KHz)
VOUT
vs.
VOUT
vs.
ISINK
ISOURCE
10
10
VS = ±2.5V
VS = ±2.5V
85°C
125°C
85°C
25°C
-
VOUT FROM V (V)
125°C
-40°C
+
VOUT FROM V (V)
100k
25°C
-40°C
1
125°C
-40°C
1
-40°C
125°C
85°C
0.1
0.1
0
50
100
150
200
50
0
100
150
IOUT (mA)
IOUT (mA)
VOUT
vs.
VOUT
vs.
ISINK
ISOURCE
10
200
250
10
VS = ±5V
VS = ±5V
125°C
125°C
25°C
-
VOUT FROM V (V)
-40°C
+
VOUT FROM V (V)
85°C
25°C
25°C
1
125°C
-40°C
1
-40°C
125°C
85°C
85°C
0.1
0
50
100
150
200
0.1
0
IOUT (mA)
50
100
150
200
250
IOUT (mA)
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Typical Performance Characteristics (continued)
Short Circuit Current
Short Circuit Current
250
200
-40°C
25°C
180
200
140
25°C
ISINK (mA)
ISOURCE (mA)
160
120
85°C, 125°C
100
80
85°C, 125°C
150
100
60
-40°C
50
40
20
0
0
2
4
6
8
10
12
14
2
4
8
6
VS (V)
Settling Time
vs.
Output Step Amplitude
40
0.1%
0.1%
35
35
30
30
SETTLING TIME (ns)
SETTLING TIME (ns)
14
Settling Time
vs.
Output Step Amplitude
40
1%
25
20
AV = -1
15
VS = ±2.5V
25
20
1%
AV = -1
15
VS = ±5V
RL = 500:
RL = 500:
10
10
0
0.5
1
2
1.5
0
2.5
1
2
3
4
VOUT (VPP)
VOUT (VPP)
0.1% Settling Time
vs.
Cap Load
ΔVOS
vs.
VOUT
140
5
6
+4
AV = -1
85°C
VS = 10V
120
+2
ZL = 500: || CL
100
0
RSERIES = 20:
'VOS (mV)
SETTLING TIME (ns)
12
10
VS (V)
80
POSITIVE
60
25°C
-2
-40°C
-4
-6
40
NEGATIVE
20
-8
0
-10
VS = ±2.5V
RL = 150:
10
100
1k
10k
CL (pF)
12
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-2
-1
0
VOUT (V)
1
2
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SNOSA35E – MAY 2004 – REVISED OCTOBER 2004
Typical Performance Characteristics (continued)
ΔVOS
vs.
VOUT
IS /Amp
vs.
VS
8
2
85°C
85°C
25°C
1
7
25°C
0
6
-40°C
-40°C
-2
IS (mA)
'VOS (mV)
-1
-3
-4
5
4
3
-5
2
-6
VS = ±5V
1
-7 R = 150:
L
-8
-5 -4 -3 -2
-
VCM = V +0.5V
0
-1
0
1
2
3
4
4
2
5
6
10
VOUT (V)
8
VS (V)
IS/Amp
vs.
VCM
IS/Amp
vs.
VCM
14
10
9
9
85°C
8
8
7
25°C
6
-40°C
85°C
7
IS (mA)
IS (mA)
12
5
25°C
6
-40°C
5
4
4
3
3
2
VS = ±2.5V
2
-0.5 0 0.5 1
VS = ±5V
1
1.5
2
2.5
3
-6
3.5 4
-5
-4
-3
-2
-1
0
1
2
3
4
VCM (V)
VCM (V)
VOS
vs.
VS (for 3 Representative Units)
VOS
vs.
VS (for 3 Representative Units)
0
0
25°C
-40°C
UNIT 1
-0.5
-0.5
UNIT 1
-1
VOS (mV)
VOS (mV)
-1
-1.5
UNIT 2
-2
-1.5
UNIT 2
-2
UNIT 3
UNIT 3
-2.5
-2.5
-3
-3
2
4
6
8
10
12
14
2
4
6
8
10
12
14
VS (V)
VS (V)
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SNOSA35E – MAY 2004 – REVISED OCTOBER 2004
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Typical Performance Characteristics (continued)
VOS
vs.
VS (for 3 Representative Units)
VOS
vs.
VCM (A Typical Unit)
-1.1
0
85°C
UNIT 1
-1.2
-0.5
85°C
-1.3
VOS (mV)
VOS (mV)
-1
-1.5
UNIT 2
-2
-40°C
-1.4
-1.5
-1.6
25°C
-1.7
UNIT 3
-2.5
-1.8
VS = ±5V
-1.9
-3
2
4
8
6
10
-6
14
12
-5
-4
VS (V)
-3
-2 -1 0
VCM (V)
|IB|
vs.
VS
2
3
4
IOS
vs.
VS
0.16
6
85°C
0.14
5
25°C
0.12
25°C
IOS (PA)
4
IB (PA)
1
3
0.1
-40°C
0.08
-40°C
0.06
2
0.04
85°C
1
0.02
0
0
2
4
6
8
10
14
12
2
VS (V)
6
8
10
12
14
VS (V)
Small Signal Step Response
0.1 V/DIV
0.1 V/DIV
Small Signal Step Response
VS = ±2.5V
VS = ±2.5V
AV = +1
AV = +2
RL = 100:
RL = 100:
2 ns/DIV
5 ns/DIV
Small Signal Step Response
0.1 V/DIV
0.1 V/DIV
Small Signal Step Response
VS = ±5V
VS = ±5V
AV = +1
AV = +2
RL = 100:
RL = 100:
5 ns/DIV
2 ns/ DIV
14
4
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SNOSA35E – MAY 2004 – REVISED OCTOBER 2004
Typical Performance Characteristics (continued)
Large Signal Step Response
1 V/DIV
0.4 V/DIV
Large Signal Step Response
VS = ±5V
VS = ±2.5V
AV = +1
AV = +2
RL = 100:
RL = 100:
5 ns/DIV
10 ns/DIV
1 V/DIV
Large Signal Step Response
VS = ±5V
AV = +2
RL = 100:
10 ns/DIV
Application Section
LARGE SIGNAL BEHAVIOR
The LMH6657/6658 is specially designed to handle large output swings, such as those encountered in video
waveforms, without being slew rate limited. With 5V supply, the LMH6657/6658 slew rate limit is larger than that
might be necessary to make full allowable output swing excursions. Therefore, the large signal frequency
response is dominated by the small signal characteristics, rather than the conventional limitation imposed by
slew rate limit.
The LMH6657/6658 input stage is designed to provide excess overdrive when needed. This occurs when fast
input signal excursions cannot be followed by the output stage. In these situations, the device encounters larger
input signals than would be encountered under normal closed loop conditions. The LMH6657/6658 input stage is
designed to take advantage of this "input overdrive" condition. The larger the amount of this overdrive, the
greater is the speed with which the output voltage can change. Here is a plot of how the output slew rate
limitation varies with respect to the amount of overdrive imposed on the input:
800
VS = ±5V
SLEW RATE (V/Ps)
700
600
500
400
300
200
100
0
0.00
1.00
2.00
3.00
INPUT OVERDRIVE (V)
Figure 3. Plot Showing the Relationship Between Slew Rate and Input Overdrive
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To relate the explanation above to a practical example, consider the following application example. Consider the
case of a closed loop amplifier with a gain of −1 amplifying a sinusoidal waveform. From the plot of Output vs.
Input (Typical Performance Characteristics section), with a 30MHz signal and 7VPP input signal, it can be seen
that the output will be limited to a swing of 6.9VPP. From the frequency Response plot it can be seen that the
inverting gain of −1 has a −32° output phase shift at this frequency. It can be shown that this setup will result in
about 1.9VPP differential input voltage corresponding to 650V/μs of slew rate from Figure 3, above (SR =
VO(pp)*π*f = 650V/μs). Note that the amount of overdrive appearing on the input for a given sinusoidal test
waveform is affected by the following:
• Output swing
• Gain setting
• Input/output phase relationship for the given test frequency
• Amplifier configuration (inverting or non-inverting)
Due to the higher frequency phase shift between input and output, there is no closed form solution to input
overdrive for a given input. Therefore, Figure 3 is not very useful by itself in determining the output swing.
The following plots aid in predicting the output transition time based on the amount of swing required for a given
gain setting.
18
AV = +10, POS
RL = 100:
16
14
AV = +10, NEG
Tr (ns)
12
10
AV = +1, POS
AV = +6, POS
8
6 AV = +6, NEG
AV = +2, POS
4
AV = +2, NEG
AV = +1, NEG
0
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
2
VO (VPP)
Figure 4. Output 20%-80% Transition vs. Output Voltage Swing (Non-Inverting Gain)
18
16
RL = 100:
14
AV = -10, NEG
AV = -10, POS
Tr (ns)
12
10
AV = -5, NEG
8
6
4
AV = -1, POS
AV = -5, POS
AV = -1, NEG
2
0
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
VO (VPP)
Figure 5. Output 20%-80% Transition vs. Output Voltage Swing (Inverting Gain)
Beyond a gain of 5 or so, the LMH6657/6658 output transition would be limited by bandwidth. For example, with
a gain of 5, the −3dB BW would be around 30MHz corresponding to a rise time of about 12ns (10% - 90%).
Assuming a near linear transition, the 20%-80% transition time would be around 9ns which matches the
measured results as shown in Figure 4.
When the output is heavily loaded, output swing may be limited by current capability of the device. Refer to
"Output Current Capability" section, below, for more details.
16
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SNOSA35E – MAY 2004 – REVISED OCTOBER 2004
Output Characteristics
OUTPUT CURRENT CAPABILITY
The LMH6657/6658 output swing for a given load can be determined by referring to the Output Voltage vs.
Output Current plots (Typical Performance Characteristics section). Characteristic Tables show the output current
when the output is 1V from either rail. The plots and table values can be used to predict closed loop continuous
value of current for a given load. If left unchecked, the output current capability of the LMH6657/6658 could
easily result in junction temperature exceeding the maximum allowed value specified under Absolute Maximum
Ratings. Proper heat sinking or other precautions are required if conditions as such, exist.
Under transient conditions, such as when the input voltage makes a large transition and the output has not had
time to reach its final value, the device can deliver output currents in excess of the typical plots mentioned above.
Plots shown in Figure 7 and below, depict how the output current capability improves under higher input
overdrive voltages:
10
+
VOUT FROM V (V)
VS = ±5V
25°C
1
20mV
500mV
0.1
0
50
100
IOUT (mA)
150
200
Figure 6. VOUT vs. ISOURCE (for Various Overdrive)
10
-
VOUT FROM V (V)
VS = ±5V
25°C
-20mV
1
-500mV
0.1
0
50
100
150
200
250
IOUT (mA)
Figure 7. VOUT vs. ISINK (for Various Overdrive)
The LMH6657/6658 output stage is designed to swing within approximately one diode drop of each supply
voltage by utilizing specially designed high speed output clamps. This allows adequate output voltage swing
even with 5V supplies and yet avoids some of the issues associated with rail-to-rail output operational amplifiers.
Some of these issues are:
• Supply current increases when output reaches saturation at or near the supply rails
• Prolonged recovery when output approaches the rails
The LMH6657/6658 output is exceedingly well-behaved when it comes to recovering from an overload condition.
As can be seen from Figure 8 below, the LMH6657/6658 will typically recover from an output overload condition
in about 18ns, regardless of the duration of the overload.
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2 V/DIV
OUTPUT
INPUT
VS = ±5V, AV = +6, RF = 1k
RG = 200: RL = OPEN
20 ns/DIV
Figure 8.
OUTPUT PHASE REVERSAL
This is a problem with some operational amplifiers. This effect is caused by phase reversal in the input stage due
to saturation of one or more of the transistors when the inputs exceed the normal expected range of voltages.
Some applications, such as servo control loops among others, are sensitive to this kind of behavior and would
need special safeguards to ensure proper functioning. The LMH6657/6658 is immune to output phase reversal
with input overload. With inputs exceeded, the LMH6657/6658 output will stay at the clamped voltage from the
supply rail. Exceeding the input supply voltages beyond the Absolute Maximum Ratings of the device could
however damage or otherwise adversely effect the reliability or life of the device.
DRIVING CAPACITIVE LOADS
The LMH6657/6658 can drive moderate values of capacitance by utilizing a series isolation resistor between the
output and the capacitive load. Typical Performance Characteristics section shows the settling time behavior for
various capacitive loads and 20Ω of isolation resistance. Capacitive load tolerance will improve with higher
closed loop gain values. Applications such as ADC buffers, among others, present complex and varying
capacitive loads to the Op Amp; best value for this isolation resistance is often found by experimentation and
actual trial and error for each application.
DISTORTION
Applications with demanding distortion performance requirements are best served with the device operating in
the inverting mode. The reason for this is that in the inverting configuration, the input common mode voltage
does not vary with the signal and there is no subsequent ill effects due to this shift in operating point and the
possibility of additional non-linearity. Moreover, under low closed loop gain settings (most suited to low
distortion), the non-inverting configuration is at a further disadvantage of having to contend with the input
common voltage range. There is also a strong relationship between output loading and distortion performance
(i.e. 1kΩ vs. 100Ω distortion improves by about 20dB @100KHz) especially at the lower frequency end where the
distortion tends to be lower. At higher frequency, this dependence diminishes greatly such that this difference is
only about 4dB at 10MHz. But, in general, lighter output load leads to reduced HD3 term and thus improves
THD.
PRINTED CIRCUIT BOARD LAYOUT AND COMPONENT VALUES SECTIONS
Generally, a good high frequency layout will keep power supply and ground traces away from the inverting input
and output pins. Parasitic capacitances on these nodes to ground will cause frequency response peaking and
possible circuit oscillations (see Application Note OA-15 for more information). National Semiconductor suggests
the following evaluation boards as a guide for high frequency layout and as an aid in device testing and
characterization:
18
Device
Package
Evaluation Board PN
LMH6657MF
SOT23-5
CLC730068
LMH6657MG
SC-70
NA
LMH6658MA
8-Pin SOIC
CLC730036
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SNOSA35E – MAY 2004 – REVISED OCTOBER 2004
Device
Package
Evaluation Board PN
LMH6658MM
8-Pin MSOP
CLC730123
These free evaluation boards are shipped when a device sample request is placed with National Semiconductor.
Another important parameter in working with high speed/high performance amplifiers, is the component values
selection. Choosing external resistors that are large in value will effect the closed loop behavior of the stage
because of the interaction of these resistors with parasitic capacitances. These capacitors could be inherent to
the device or a by-product of the board layout and component placement. Either way, keeping the resistor values
lower, will diminish this interaction to a large extent. On the other hand, choosing very low value resistors will
load down nodes and will contribute to higher overall power dissipation.
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19
PACKAGE OPTION ADDENDUM
www.ti.com
17-Nov-2012
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package Qty
Drawing
Eco Plan
Lead/Ball Finish
(2)
MSL Peak Temp
Samples
(3)
(Requires Login)
LMH6657MF/NOPB
ACTIVE
SOT-23
DBV
5
1000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
LMH6657MFX
ACTIVE
SOT-23
DBV
5
3000
TBD
CU SNPB
Level-1-260C-UNLIM
LMH6657MFX/NOPB
ACTIVE
SOT-23
DBV
5
3000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
LMH6657MG
ACTIVE
SC70
DCK
5
1000
TBD
CU SNPB
Level-1-260C-UNLIM
LMH6657MG/NOPB
ACTIVE
SC70
DCK
5
1000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
LMH6657MGX
ACTIVE
SC70
DCK
5
3000
TBD
CU SNPB
Level-1-260C-UNLIM
LMH6657MGX/NOPB
ACTIVE
SC70
DCK
5
3000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
LMH6658MA
ACTIVE
SOIC
D
8
95
TBD
CU SNPB
Level-1-235C-UNLIM
LMH6658MA/NOPB
ACTIVE
SOIC
D
8
95
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
LMH6658MAX
ACTIVE
SOIC
D
8
2500
TBD
CU SNPB
Level-1-235C-UNLIM
LMH6658MAX/NOPB
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
LMH6658MM
ACTIVE
VSSOP
DGK
8
1000
TBD
CU SNPB
Level-1-260C-UNLIM
LMH6658MM/NOPB
ACTIVE
VSSOP
DGK
8
1000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
LMH6658MMX
ACTIVE
VSSOP
DGK
8
3500
TBD
CU SNPB
Level-1-260C-UNLIM
LMH6658MMX/NOPB
ACTIVE
VSSOP
DGK
8
3500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
17-Nov-2012
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
17-Nov-2012
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
LMH6657MF/NOPB
SOT-23
DBV
5
1000
178.0
8.4
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
3.2
3.2
1.4
4.0
8.0
Q3
LMH6657MFX
SOT-23
DBV
5
3000
178.0
8.4
3.2
3.2
1.4
4.0
8.0
Q3
LMH6657MFX/NOPB
SOT-23
DBV
5
3000
178.0
8.4
3.2
3.2
1.4
4.0
8.0
Q3
LMH6657MG
SC70
DCK
5
1000
178.0
8.4
2.25
2.45
1.2
4.0
8.0
Q3
LMH6657MG/NOPB
SC70
DCK
5
1000
178.0
8.4
2.25
2.45
1.2
4.0
8.0
Q3
LMH6657MGX
SC70
DCK
5
3000
178.0
8.4
2.25
2.45
1.2
4.0
8.0
Q3
LMH6657MGX/NOPB
SC70
DCK
5
3000
178.0
8.4
2.25
2.45
1.2
4.0
8.0
Q3
LMH6658MAX
SOIC
D
8
2500
330.0
12.4
6.5
5.4
2.0
8.0
12.0
Q1
LMH6658MAX/NOPB
SOIC
D
8
2500
330.0
12.4
6.5
5.4
2.0
8.0
12.0
Q1
LMH6658MM
VSSOP
DGK
8
1000
178.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
LMH6658MM/NOPB
VSSOP
DGK
8
1000
178.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
LMH6658MMX
VSSOP
DGK
8
3500
330.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
LMH6658MMX/NOPB
VSSOP
DGK
8
3500
330.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
17-Nov-2012
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
LMH6657MF/NOPB
SOT-23
DBV
5
1000
203.0
190.0
41.0
LMH6657MFX
SOT-23
DBV
5
3000
206.0
191.0
90.0
LMH6657MFX/NOPB
SOT-23
DBV
5
3000
206.0
191.0
90.0
LMH6657MG
SC70
DCK
5
1000
203.0
190.0
41.0
LMH6657MG/NOPB
SC70
DCK
5
1000
203.0
190.0
41.0
LMH6657MGX
SC70
DCK
5
3000
206.0
191.0
90.0
LMH6657MGX/NOPB
SC70
DCK
5
3000
206.0
191.0
90.0
LMH6658MAX
SOIC
D
8
2500
349.0
337.0
45.0
LMH6658MAX/NOPB
SOIC
D
8
2500
349.0
337.0
45.0
LMH6658MM
VSSOP
DGK
8
1000
203.0
190.0
41.0
LMH6658MM/NOPB
VSSOP
DGK
8
1000
203.0
190.0
41.0
LMH6658MMX
VSSOP
DGK
8
3500
349.0
337.0
45.0
LMH6658MMX/NOPB
VSSOP
DGK
8
3500
349.0
337.0
45.0
Pack Materials-Page 2
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