LMH6715MAX

LMH6715 www.ti.com SNOSA10C – MAY 2002 – REVISED APRIL 2013 LMH6715 Dual Wideband Video Op Amp Check for Samples: LMH6715 FEATURES DESCRIPTION • The LMH6715 combines TI's VIP10 high speed complementary bipolar process with TI's current feedback topology to produce a very high speed dual op amp. The LMH6715 provides 400MHz small signal bandwidth at a gain of +2V/V and 1300V/μs slew rate while consuming only 5.8mA per amplifier from ±5V supplies. 1 2 • • • • • • • • TA = 25°C, RL = 100Ω, Typical Values Unless Specified. Very Low Diff. Gain, Phase: 0.02%, 0.02° Wide Bandwidth: 480MHz (AV = +1V/V); 400MHz (AV = +2V/V) 0.1dB Gain Flatness to 100MHz Low Power: 5.8mA/Channel −70dB Channel-to-Channel Crosstalk (10MHz) Fast Slew Rate: 1300V/μs Unity Gain Stable Improved Replacement for CLC412 APPLICATIONS • • • • • • HDTV, NTSC & PAL Video Systems Video Switching and Distribution IQ Amplifiers Wideband Active Filters Cable Drivers DC Coupled Single-to-Differential Conversions The LMH6715 offers exceptional video performance with its 0.02% and 0.02° differential gain and phase errors for NTSC and PAL video signals while driving up to four back terminated 75Ω loads. The LMH6715 also offers a flat gain response of 0.1dB to 100MHz and very low channel-to-channel crosstalk of −70dB at 10MHz. Additionally, each amplifier can deliver 70mA of output current. This level of performance makes the LMH6715 an ideal dual op amp for high density, broadcast quality video systems. The LMH6715's two very well matched amplifiers support a number of applications such as differential line drivers and receivers. In addition, the LMH6715 is well suited for Sallen Key active filters in applications such as anti-aliasing filters for high speed A/D converters. Its small 8-pin SOIC package, low power requirement, low noise and distortion allow the LMH6715 to serve portable RF applications such as IQ channels. Differential Gain & Phase with Multiple Video Loads Figure 1. 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. All trademarks are the property of their respective owners. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2002–2013, Texas Instruments Incorporated LMH6715 SNOSA10C – MAY 2002 – REVISED APRIL 2013 www.ti.com Frequency Response vs. VOUT Figure 2. These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. Absolute Maximum Ratings (1) (2) ESD Tolerance (3) Human Body Model 2000V Machine Model 150V VCC ±6.75V IOUT See (4) Common-Mode Input Voltage ±VCC Differential Input Voltage 2.2V Maximum Junction Temperature +150°C −65°C to +150°C Storage Temperature Range Lead Temperature (Soldering 10 sec) (1) (2) (3) (4) +300°C Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but specific performance is not ensured. For ensured specifications, see the Electrical Characteristics tables. If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and specifications. Human body model, 1.5kΩ in series with 100pF. Machine model, 0Ω In series with 200pF. The maximum output current (IOUT) is determined by device power dissipation limitations. See the POWER DISSIPATION section for more details. Operating Ratings Thermal Resistance Package SOIC (θJC) (θJA) 65°C/W 145°C/W −40°C to +85°C Operating Temperature Range Nominal Operating Voltage 2 ±5V to ±6V Submit Documentation Feedback Copyright © 2002–2013, Texas Instruments Incorporated Product Folder Links: LMH6715 LMH6715 www.ti.com SNOSA10C – MAY 2002 – REVISED APRIL 2013 Electrical Characteristics (1) AV = +2, RF = 500Ω, VCC = ±5 V, RL = 100Ω; unless otherwise specified. Boldface limits apply at the temperature extremes. Symbol Parameter Conditions Min Typ Max Units 280 400 MHz 170 MHz dB Frequency Domain Response SSBW -3dB Bandwidth VOUT < 0.5VPP, RF = 300Ω LSBW -3dB Bandwidth VOUT < 4.0VPP, RF = 300Ω Gain Flatness VOUT < 0.5VPP GFP Peaking DC to 100MHz, RF = 300Ω 0.1 GFR Rolloff DC to 100MHz, RF = 300Ω 0.1 dB deg LPD Linear Phase Deviation DC to 100MHz, RF = 300Ω 0.25 DG Differential Gain RL = 150Ω, 4.43MHz 0.02 % DP Differential Phase RL = 150Ω, 4.43MHz 0.02 deg 0.5V Step Time Domain Response Tr Rise and Fall Time 1.4 ns 4V Step 3 ns Ts Settling Time to 0.05% 2V Step 12 ns OS Overshoot 0.5V Step 1 % SR Slew Rate 2V Step 1300 V/μs Distortion And Noise Response HD2 2nd Harmonic Distortion 2VPP, 20MHz −60 dBc HD3 3rd Harmonic Distortion 2VPP, 20MHz −75 dBc Equivalent Input Noise VN Non-Inverting Voltage >1MHz 3.4 nV/√Hz IN Inverting Current >1MHz 10.0 pA/√Hz INN Non-Inverting Current >1MHz 1.4 pA/√Hz SNF Noise Floor >1MHz −153 dB1Hz Input Referred 10MHz −70 dB XTLKA Crosstalk Static, DC Performance VIO Input Offset Voltage DVIO IBN Average Drift Input Bias Current DIBN IBI ±6 ±8 ±5 ±6 Average Drift μA ±12 ±20 ±30 Inverting mV μV/°C ±30 Non-Inverting Average Drift Input Bias Current DIBI ±2 nA/°C μA ±21 ±35 ±20 nA/°C PSRR Power Supply Rejection Ratio DC 46 44 60 dB CMRR Common Mode Rejection Ratio DC 50 47 56 dB ICC Supply Current per Amplifier RL = ∞ 4.7 4.1 5.8 7.6 8.1 mA Miscellaneous Performance RIN Input Resistance Non-Inverting 1000 kΩ CIN Input Capacitance Non-Inverting 1.0 pF ROUT Output Resistance Closed Loop .06 Ω (1) Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that TJ = TA. No specification of parametric performance is indicated in the electrical tables under conditions of internal self heating where TJ > TA. See Application Section for information on temperature de-rating of this device." Min/Max ratings are based on product characterization and simulation. Individual parameters are tested as noted. Submit Documentation Feedback Copyright © 2002–2013, Texas Instruments Incorporated Product Folder Links: LMH6715 3 LMH6715 SNOSA10C – MAY 2002 – REVISED APRIL 2013 www.ti.com Electrical Characteristics(1) (continued) AV = +2, RF = 500Ω, VCC = ±5 V, RL = 100Ω; unless otherwise specified. Boldface limits apply at the temperature extremes. Symbol VO Parameter Output Voltage Range VOL Conditions Min RL = ∞ RL = 100Ω CMIR Input Voltage Range IO Output Current ±3.5 ±3.4 Common Mode Typ Max Units ±4.0 V ±3.9 V ±2.2 V 70 mA Connection Diagram Figure 3. 8-Pin SOIC, Top View 4 Submit Documentation Feedback Copyright © 2002–2013, Texas Instruments Incorporated Product Folder Links: LMH6715 LMH6715 www.ti.com SNOSA10C – MAY 2002 – REVISED APRIL 2013 Typical Performance Characteristics (TA = 25°C, VCC = ±5V, AV = ±2V/V, RF = 500Ω, RL = 100Ω, unless otherwise specified). Non-Inverting Freq·uency Response Inverting Frequency Response Figure 4. Figure 5. Non-Inverting Frequency Response vs. VOUT Small Signal Channel Matching Figure 6. Figure 7. Frequency Response vs. Load Resistance Non-Inverting Frequency Response vs. RF Figure 8. Figure 9. Submit Documentation Feedback Copyright © 2002–2013, Texas Instruments Incorporated Product Folder Links: LMH6715 5 LMH6715 SNOSA10C – MAY 2002 – REVISED APRIL 2013 www.ti.com Typical Performance Characteristics (continued) (TA = 25°C, VCC = ±5V, AV = ±2V/V, RF = 500Ω, RL = 100Ω, unless otherwise specified). 6 Small Signal Pulse Response Large Signal Pulse Response Figure 10. Figure 11. Input-Referred Crosstalk Settling Time vs. Accuracy Figure 12. Figure 13. −3dB Bandwidth vs. VOUT DC Errors vs. Temperature Figure 14. Figure 15. Submit Documentation Feedback Copyright © 2002–2013, Texas Instruments Incorporated Product Folder Links: LMH6715 LMH6715 www.ti.com SNOSA10C – MAY 2002 – REVISED APRIL 2013 Typical Performance Characteristics (continued) (TA = 25°C, VCC = ±5V, AV = ±2V/V, RF = 500Ω, RL = 100Ω, unless otherwise specified). Open Loop Transimpedance, Z(s) Equivalent Input Noise vs. Frequency Figure 16. Figure 17. Differential Gain & Phase vs. Load Differential Gain vs. Frequency Figure 18. Figure 19. Differential Phase vs. Frequency Gain Flatness & Linear Phase Deviation Figure 20. Figure 21. Submit Documentation Feedback Copyright © 2002–2013, Texas Instruments Incorporated Product Folder Links: LMH6715 7 LMH6715 SNOSA10C – MAY 2002 – REVISED APRIL 2013 www.ti.com Typical Performance Characteristics (continued) (TA = 25°C, VCC = ±5V, AV = ±2V/V, RF = 500Ω, RL = 100Ω, unless otherwise specified). 2nd Harmonic Distortion vs. Output Voltage 3rd Harmonic Distortion vs. Output Voltage Figure 22. Figure 23. Closed Loop Output Resistance PSRR & CMRR Figure 24. Figure 25. Suggested RS vs. CL Figure 26. 8 Submit Documentation Feedback Copyright © 2002–2013, Texas Instruments Incorporated Product Folder Links: LMH6715 LMH6715 www.ti.com SNOSA10C – MAY 2002 – REVISED APRIL 2013 APPLICATION SECTION Figure 27. Non-Inverting Configuration with Power Supply Bypassing Figure 28. Inverting Configuration with Power Supply Bypassing Application Introduction Offered in an 8-pin package for reduced space and cost, the wideband LMH6715 dual current-feedback op amp provides closely matched DC and AC electrical performance characteristics making the part an ideal choice for wideband signal processing. Applications such as broadcast quality video systems, IQ amplifiers, filter blocks, high speed peak detectors, integrators and transimedance amplifiers will all find superior performance in the LMH6715 dual op amp. FEEDBACK RESISTOR SELECTION One of the key benefits of a current feedback operational amplifier is the ability to maintain optimum frequency response independent of gain by using appropriate values for the feedback resistor (RF). The Electrical Characteristics and Typical Performance plots specify an RF of 500Ω, a gain of +2V/V and ±5V power supplies (unless otherwise specified). Generally, lowering RF from it's recommended value will peak the frequency response and extend the bandwidth while increasing the value of RF will cause the frequency response to roll off faster. Reducing the value of RF too far below it's recommended value will cause overshoot, ringing and, eventually, oscillation. Submit Documentation Feedback Copyright © 2002–2013, Texas Instruments Incorporated Product Folder Links: LMH6715 9 LMH6715 SNOSA10C – MAY 2002 – REVISED APRIL 2013 www.ti.com Frequency Response vs. RF Figure 29. Figure 29 shows the LMH6715's frequency response as RF is varied (RL = 100Ω, AV = +2). This plot shows that an RF of 200Ω results in peaking and marginal stability. An RF of 300Ω gives near maximal bandwidth and gain flatness with good stability, but with very light loads (RL > 300Ω) the device may show some peaking. An RF of 500Ω gives excellent stability with good bandwidth and is the recommended value for most applications. Since all applications are slightly different it is worth some experimentation to find the optimal RF for a given circuit. For more information see Application Note OA-13 (Literature Number SNOA366) which describes the relationship between RF and closed-loop frequency response for current feedback operational amplifiers. When configuring the LMH6715 for gains other than +2V/V, it is usually necessary to adjust the value of the feedback resistor. The two plots labeled shown in Figure 30 and Figure 31 provide recommended feedback resistor values for a number of gain selections. RF vs. Non-Inverting Gain Figure 30. Both plots show the value of RF approaching a minimum value (dashed line) at high gains. Reducing the feedback resistor below this value will result in instability and possibly oscillation. The recommended value of RF is depicted by the solid line, which begins to increase at higher gains. The reason that a higher RF is required at higher gains is the need to keep RG from decreasing too far below the output impedance of the input buffer. For the LMH6715 the output resistance of the input buffer is approximately 160Ω and 50Ω is a practical lower limit for RG. Due to the limitations on RG the LMH6715 begins to operate in a gain bandwidth limited fashion for gains of ±5V/V or greater. 10 Submit Documentation Feedback Copyright © 2002–2013, Texas Instruments Incorporated Product Folder Links: LMH6715 LMH6715 www.ti.com SNOSA10C – MAY 2002 – REVISED APRIL 2013 RF vs. Inverting Gain Figure 31. When using the LMH6715 as a replacement for the CLC412, identical bandwidth can be obtained by using an appropriate value of RF . The chart “Frequency Response vs. RF” (see Figure 29) shows that an RF of approximately 700Ω will provide bandwidth very close to that of the CLC412. At other gains a similar increase in RF can be used to match the new and old parts. CIRCUIT LAYOUT With all high frequency devices, board layouts with stray capacitances have a strong influence over AC performance. The LMH6715 is no exception and its input and output pins are particularly sensitive to the coupling of parasitic capacitances (to AC ground) arising from traces or pads placed too closely (