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LMH6723, LMH6724
SNOSA83I – AUGUST 2003 – REVISED AUGUST 2014
LMH6723/LMH6724 Single/Dual/Quad 370-MHz, 1-mA
Current Feedback Operational Amplifier
1 Features
3 Description
•
The LMH6723/LMH6724 provides a 260 MHz small
signal bandwidth at a gain of +2 V/V and a 600 V/μs
slew rate while consuming only 1 mA from ±5V
supplies.
1
•
•
•
•
•
•
•
•
•
•
Large Signal Bandwidth and Slew Rate 100%
Tested
370 MHz Bandwidth (AV = 1, VOUT = 0.5 VPP) −3
dB BW
260 MHz (AV = +2 V/V, VOUT = 0.5 VPP) −3 dB BW
1 mA Supply Current
110 mA Linear Output Current
0.03%, 0.11° Differential Gain, Phase
0.1 dB Gain Flatness to 100 MHz
Fast Slew Rate: 600 V/μs
Unity Gain Stable
Single Supply Range of 4.5 to 12V
Improved Replacement for CLC450, CLC452,
(LMH6723)
2 Applications
•
•
•
•
Line Driver
Portable Video
A/D Driver
Portable DVD
The LMH6723/LMH6724 supports video applications
with its 0.03% and 0.11° differential gain and phase
for NTSC and PAL video signals, while also offering a
flat gain response of 0.1 dB to 100 MHz. Additionally,
the LMH6723/LMH6724 can deliver 110 mA of linear
output current. This level of performance, as well as a
wide supply range of 4.5 to 12V, makes the
LMH6723/LMH6724 an ideal op amp for a variety of
portable applications. With small packages (SOIC
and SOT-23), low power requirement, and high
performance, the LMH6723/LMH6724 serves a wide
variety of portable applications.
The LMH6723/LMH6724 is manufactured in Texas
Instruments' VIP10 complimentary bipolar process.
Device Information(1)
PART NUMBER
PACKAGE
BODY SIZE (NOM)
LMH6723
SOT-23 (5)
2.90 mm × 1.60 mm
LMH6723
SOIC (8)
4.90 mm × 3.91 mm
LMH6724
SOIC (8)
4.90 mm × 3.91 mm
(1) For all available packages, see the orderable addendum at
the end of the datasheet.
Typical Application
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
LMH6723, LMH6724
SNOSA83I – AUGUST 2003 – REVISED AUGUST 2014
www.ti.com
Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
6.1
6.2
6.3
6.4
6.5
6.6
6.7
4
4
4
4
5
6
8
Absolute Maximum Ratings ......................................
Handling Ratings.......................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
±5V Electrical Characteristics ...................................
±2.5V Electrical Characteristics ................................
Typical Performance Characteristics ........................
Application and Implementation ........................ 13
7.1 Application Information............................................ 13
7.2 Typical Application .................................................. 13
7.3
7.4
7.5
7.6
7.7
7.8
7.9
7.10
8
Evaluation Boards ...................................................
Feedback Resistor Selection ..................................
Active Filters............................................................
Driving Capacitive Loads ........................................
Inverting Input Parasitic Capacitance .....................
Layout Considerations ............................................
Video Performance .................................................
Single 5-V Supply Video .......................................
13
14
16
16
17
18
18
18
Power Supply Recommendations...................... 19
8.1 ESD Protection........................................................ 19
9
Device and Documentation Support.................. 20
9.1
9.2
9.3
9.4
Related Links ..........................................................
Trademarks .............................................................
Electrostatic Discharge Caution ..............................
Glossary ..................................................................
20
20
20
20
10 Mechanical, Packaging, and Orderable
Information ........................................................... 20
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision H (April 2013) to Revision I
Page
•
Changed data sheet structure and organization. Added, updated, or renamed the following sections: Device
Information Table, Application and Implementation; Power Supply Recommendations; Device and Documentation
Support; Mechanical, Packaging, and Ordering Information. Removed "LMH6725" from title and document. ..................... 1
•
Deleted "Channel Matching" and "Crosstalk" plots. .............................................................................................................. 8
•
Changed Figure 11 ................................................................................................................................................................ 9
•
Changed Figure 12 ................................................................................................................................................................ 9
•
Changed Figure 29............................................................................................................................................................... 11
•
Changed Figure 30............................................................................................................................................................... 11
•
Deleted sentence beginning "These evaluation boards..." .................................................................................................. 13
•
Deleted sentence beginning, "Although the example..." ..................................................................................................... 17
•
Deleted sentence beginning "The SOIC-14 has ..." ............................................................................................................ 19
Changes from Revision G (April 2013) to Revision H
•
2
Page
Changed layout of National Data Sheet to TI format ........................................................................................................... 19
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Copyright © 2003–2014, Texas Instruments Incorporated
Product Folder Links: LMH6723 LMH6724
LMH6723, LMH6724
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SNOSA83I – AUGUST 2003 – REVISED AUGUST 2014
5 Pin Configuration and Functions
5-Pin SOT-23 (LMH6723)
Package DBV
(Top View)
1
8-Pin SOIC Package (LMH6723)
Package D08A
(Top View)
5
OUT
V
+
N/C
-IN
V
-
2
8
7
-
N/C
+
V
2
+
+IN
1
+IN
4
3
-IN
V
-
3
6
+
4
5
OUTPUT
N/C
8-Pin SOIC Package (LMH6724)
Package D08A
(Top View)
1
8
+
V
OUT A
A
-
2
+
7
-IN A
OUT B
3
6
+IN A
+
V
-
-IN B
B
-
4
5
+IN B
Pin Functions
PIN
NUMBER
NAME
I/O
DESCRIPTION
LMH6723
(DBV)
LMH6723
(D08A)
LMH6724
(D08A)
-IN
4
2
I
Inverting Input
+IN
3
3
I
Non-inverting Input
-IN A
2
I
ChA Inverting Input
+IN A
3
I
ChA Non-inverting Input
-IN B
6
I
ChB Inverting Input
+IN B
5
N/C
1,5,8
I
ChB Non-inverting Input
–
–
OUT A
1
O
ChA Output
OUT B
7
O
ChB Output
OUTPUT
1
6
O
Output
V-
2
4
4
I
Negative Supply
V+
5
7
8
I
Positive Supply
Copyright © 2003–2014, Texas Instruments Incorporated
Product Folder Links: LMH6723 LMH6724
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6 Specifications
6.1 Absolute Maximum Ratings (1) (2) (3)
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
VCC (V+ - V-)
UNIT
±6.75
IOUT
120
(4)
V
mA
Common Mode Input Voltage
±VCC
V
Maximum Junction Temperature
+150
°C
Infrared or Convection (20 sec)
235
°C
Wave Soldering (10 sec)
260
°C
Soldering Information
(1)
(2)
(3)
(4)
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not ensured. For ensured specifications, see the Electrical
Characteristics tables.
If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and
specifications.
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The maximum continuous output current (IOUT) is determined by device power dissipation limitations. See Power Supply
Recommendations for more details.
6.2 Handling Ratings
Tstg
Storage temperature range
V(ESD)
(1)
(2)
(3)
Electrostatic discharge
MIN
MAX
UNIT
−65
+150
°C
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all
pins (1) (2)
2000
Machine Model (MM), per JEDEC specification JESD22-C101, all
pins (2) (3)
200
V
JEDEC document JEP155 states that 2000-V HBM allows safe manufacturing with a standard ESD control process.
Human Body Model, 1.5 kΩ in series with 100 pF. Machine Model, 0Ω In series with 200 pF.
JEDEC document JEP157 states that 200-V MM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions (1)
over operating free-air temperature range (unless otherwise noted)
MAX
UNIT
Operating Temperature Range
MIN
−40
+85
°C
Nominal Supply Voltage
4.5
12
V
(1)
NOM
The maximum continuous output current (IOUT) is determined by device power dissipation limitations. See Power Supply
Recommendations for more details.
6.4 Thermal Information
THERMAL METRIC (1)
RθJA
(1)
4
Junction-to-ambient thermal resistance
SOT-23
SOIC
DBV
D08A
5 PINS
8 PINS
230°C/W
166°C/W
UNIT
°C/W
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
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SNOSA83I – AUGUST 2003 – REVISED AUGUST 2014
6.5 ±5V Electrical Characteristics
Unless otherwise specified, AV = +2, RF = 1200Ω, RL = 100Ω. Boldface limits apply at temperature extremes. (1)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
FREQUENCY DOMAIN RESPONSE
SSBW
−3 dB Bandwidth Small Signal
VOUT = 0.5 VPP
LSBW
−3dB Bandwidth Large Signal
VOUT = 4.0 VPP
260
90
110
85
95
MHz
MHz
UGBW
−3 dB Bandwidth Unity Gain
VOUT = .2 VPP AV = 1 V/V
370
MHz
.1dB BW
.1 dB Bandwidth
VOUT = 0.5 VPP
100
MHz
DG
Differential Gain
RL = 150Ω, 4.43 MHz
0.03%
DP
Differential Phase
RL = 150Ω, 4.43 MHz
0.11
deg
2.5
ns
TIME DOMAIN RESPONSE
TRS
Rise and Fall Time
4V Step
TSS
Settling Time to 0.05%
2V Step
SR
Slew Rate
4V Step
30
ns
600
V/μs
2 VPP, 5 MHz
−65
dBc
2 VPP, 5 MHz
−63
dBc
500
DISTORTION and NOISE RESPONSE
HD2
HD3
2nd Harmonic Distortion
rd
3 Harmonic Distortion
EQUIVALENT INPUT NOISE
VN
Non-Inverting Voltage Noise
>1 MHz
4.3
nV/√Hz
NICN
Inverting Current Noise
>1 MHz
6
pA/√Hz
ICN
Non-Inverting Current Noise
>1 MHz
6
pA/√Hz
STATIC, DC PERFORMANCE
VIO
Input Offset Voltage
IBN
Input Bias Current
Non-Inverting
IBI
Input Bias Current
Inverting
PSRR
Power Supply Rejection Ratio
DC, 1V Step
CMRR
ICC
(1)
Common Mode Rejection Ratio
DC, 1V Step
±3
±3.7
mV
−2
±4
±5
µA
0.4
±4
±5
µA
LMH6723
59
57
64
LMH6724
59
55
64
LMH6723
57
55
60
LMH6724
57
53
60
RL = ∞
Supply Current (per amplifier)
1
dB
dB
1
1.2
1.4
mA
Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the device such that TJ = TA. No ensured specification of parametric performance is indicated in the electrical
tables under conditions of internal self heating where TJ > TA. See Application and Implementation for information on temperature
derating of this device. Min/Max ratings are based on product characterization and simulation. Individual parameters are tested as
noted.
Copyright © 2003–2014, Texas Instruments Incorporated
Product Folder Links: LMH6723 LMH6724
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±5V Electrical Characteristics (continued)
Unless otherwise specified, AV = +2, RF = 1200Ω, RL = 100Ω. Boldface limits apply at temperature extremes.(1)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
MISCELLANEOUS PERFORMANCE
RIN+
Input Resistance
Non-Inverting
RIN−
Input Resistance
(Output Resistance of Input Buffer)
Inverting
CIN
Input Capacitance
Non-Inverting
1.5
pF
ROUT
Output Resistance
Closed Loop
0.01
Ω
VO
Output Voltage Range
RL = ∞
VOL
100
kΩ
Ω
500
LMH6723
±4
±3.9
±4.1
LMH6724
±4
±3.85
±4.1
V
Output Voltage Range, High
RL = 100Ω
3.6
3.5
3.7
Output Voltage Range, Low
RL = 100Ω
−3.25
−3.1
−3.45
CMVR
Input Voltage Range
Common Mode, CMRR > 50 dB
IO
Output Current
Sourcing, VOUT = 0
V
±4.0
Sinking, VOUT = 0
V
95
70
110
−80
−70
110
mA
6.6 ±2.5V Electrical Characteristics
Unless otherwise specified, AV = +2, RF = 1200Ω, RL = 100Ω. Boldface limits apply at temperature extremes. (1)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
FREQUENCY DOMAIN RESPONSE
SSBW
−3 dB Bandwidth Small Signal
VOUT = 0.5 VPP
LSBW
−3 dB Bandwidth Large Signal
VOUT = 2.0 VPP
UGBW
−3 dB Bandwidth Unity Gain
VOUT = 0.5 VPP, AV = 1 V/V
.1dB BW
.1 dB Bandwidth
VOUT = 0.5 VPP
DG
Differential Gain
RL = 150Ω, 4.43 MHz
.03%
DP
Differential Phase
RL = 150Ω, 4.43 MHz
0.1
95
210
MHz
125
MHz
290
MHz
100
MHz
deg
TIME DOMAIN RESPONSE
TRS
Rise and Fall Time
2V Step
SR
Slew Rate
2V Step
4
275
ns
400
V/μs
DISTORTION AND NOISE RESPONSE
HD2
2nd Harmonic Distortion
2 VPP, 5 MHz
−67
dBc
HD3
3rd Harmonic Distortion
2 VPP, 5 MHz
−67
dBc
EQUIVALENT INPUT NOISE
VN
Non-Inverting Voltage
>1 MHz
4.3
nV/√Hz
NICN
Inverting Current
>1MHz
6
pA/√Hz
ICN
Non-Inverting Current
>1MHz
6
pA/√Hz
(1)
6
Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the device such that TJ = TA. No ensured specification of parametric performance is indicated in the electrical
tables under conditions of internal self heating where TJ > TA. See Application and Implementation for information on temperature
derating of this device. Min/Max ratings are based on product characterization and simulation. Individual parameters are tested as
noted.
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Product Folder Links: LMH6723 LMH6724
LMH6723, LMH6724
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SNOSA83I – AUGUST 2003 – REVISED AUGUST 2014
±2.5V Electrical Characteristics (continued)
Unless otherwise specified, AV = +2, RF = 1200Ω, RL = 100Ω. Boldface limits apply at temperature extremes.(1)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
−0.5
±3
±3.4
mV
−2.7
±4
±5
µA
−0.7
±4
±5
µA
STATIC, DC PERFORMANCE
VIO
Input Offset Voltage
IBN
Input Bias Current
Non-Inverting
IBI
Input Bias Current
Inverting
PSRR
Power Supply Rejection Ratio
DC, 0.5V Step
CMRR
ICC
Common Mode Rejection Ratio
DC, 0.5V Step
Supply Current (per amplifier)
LMH6723
59
57
62
LMH6724
58
55
62
LMH6723
57
53
59
LMH6724
55
52
59
dB
dB
RL = ∞
0.9
100
1.1
1.3
mA
MISCELLANEOUS PERFORMANCE
RIN+
Input Resistance
Non-Inverting
RIN−
Input Resistance
(Output Resistance of Input Buffer)
Inverting
CIN
Input Capacitance
Non-Inverting
ROUT
Output Resistance
Closed Loop
VO
Output Voltage Range
RL = ∞
VOL
Output Voltage Range, High
RL = 100Ω
Output Voltage Range, Low
RL = 100Ω
CMVR
Input Voltage Range
Common Mode, CMRR > 50 dB
IO
Output Current
Sourcing
500
kΩ
Ω
1.5
pF
0.02
Ω
±1.55
±1.4
±1.65
V
LMH6723
1.35
1.27
1.45
LMH6724
1.35
1.26
1.45
LMH6723
−1.25
−1.15
−1.38
LMH6724
−1.25
−1.15
−1.38
Sinking
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V
V
±1.45
V
70
60
90
−30
−30
−60
mA
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6.7 Typical Performance Characteristics
AV = 2, RF = 1200Ω, RL = 100Ω, unless otherwise specified.
1
1
VOUT = 0.5VPP
0
-1
0
VOUT = 2VPP
-2
-2
VOUT = 1VPP
-3
GAIN (dB)
GAIN (dB)
VOUT = 0.5VPP
-1
-4
-5
-6
VOUT = 4VPP
-3
VOUT = 2VPP
-4
-5
VOUT = 1VPP
-6
VS = ±2.5V
-7
-8
VS = ±5V
-7
AV = 2V/V
AV = 2V/V
-8
RF = 1200:
-9
RF = 1200:
-9
1
10
100
1
1000
10
100
1000
FREQUENCY (MHz)
FREQUENCY (MHz)
Figure 1. Frequency Response vs. VOUT, AV = 2
Figure 2. Frequency Response vs. VOUT, AV = 2
4
4
VS = ±2.5V
VS = ±5V
RF = 2000:
2
RF = 2000:
2
AV = 1V/V
AV = 1V/V
0
VOUT = 2VPP
GAIN (dB)
GAIN (dB)
0
-2
VOUT = 1VPP
-4
VOUT = 0.5VPP
VOUT = 4VPP
-2
VOUT = 2VPP
-4
-6
-6
-8
-8
VOUT = 1VPP
VOUT = 0.5VPP
-10
-10
1
10
100
1
1000
10
100
1000
FREQUENCY (MHz)
FREQUENCY (MHz)
Figure 3. Frequency Response vs. VOUT, AV = 1
Figure 4. Frequency Response vs. VOUT, AV = 1
1
4
AV = +1, RF = 2000:
VS = ±5V
VS = ±6V
VOUT = 2VPP
2
0
-1
-2
GAIN (dB)
GAIN (dB)
0
AV = 6, RF = 500:
-4
AV = 2, RF = 1200:
-6
VS = ±2.5V
-2
VS = ±3.3V
-3
VS = ±5V
-4
AV = -1, RF = 1200:
-8
-5
-10
-6
VOUT = 2VPP
AV = 2V/V
1
8
10
100
1000
1
10
100
1000
FREQUENCY (MHz)
FREQUENCY (MHz)
Figure 5. Large Signal Frequency Response
Figure 6. Frequency Response vs. Supply Voltage
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Typical Performance Characteristics (continued)
AV = 2, RF = 1200Ω, RL = 100Ω, unless otherwise specified.
1400
2500
1200
2000
1500
RF (:)
RF (:)
1000
1000
800
600
400
500
200
0
0
1
2
3
4
5
6
7
8
9
1
10
2
3
GAIN (V/V)
8
9
10
0
0
-1
-1
RF = 1200:
-2
RF = 2000:
-3
RF = 800:
1
GAIN (dB)
-4
RF = 1.2k:
-2
RF = 2k:
-3
-4
-5
VS = ±5V
-6
VS = ±2.5V
VOUT = 1VPP
-7
VOUT = 1VPP
-8
RL = 100:
-8
0.1
1
10
100
0.1
1000
1
FREQUENCY (MHz)
10
100
1000
FREQUENCY (MHz)
Figure 9. Frequency Response vs. RF
Figure 10. Frequency Response vs. RF
130
130
Gain
Phase 160
120
180
Gain
Phase 140
120
120
110
100
110
80
100
40
90
0
80
-40
| Z | (dB:)
200
Phase (degrees)
140
100
60
90
20
80
-20
70
-60
-100
70
-80
60
-120
60
50
-160
50
40
0.1
1
10
100
1000
Frequency (kHz)
-200
10000 100000 1000000
40
0.1
-140
1
D001
Figure 11. Open Loop Gain & Phase
Phase (Degrees)
GAIN (dB)
7
2
RF = 800:
-5
| Z | (dB:)
6
Figure 8. Suggested RF vs. Gain Inverting
2
1
-7
5
GAIN (-V/V)
Figure 7. Suggested RF vs. Gain Non-Inverting
-6
4
10
100
1000
Frequency (kHz)
10000
-180
100000
D002
Figure 12. Open Loop Gain & Phase
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Typical Performance Characteristics (continued)
AV = 2, RF = 1200Ω, RL = 100Ω, unless otherwise specified.
-40
-35
VS = ±2.5V
f = 5MHz
VS = ±5V
f = 5MHz
-45
-45
DISTORTION (dBc)
DISTORTION (dBc)
-40
-50
HD3
-55
HD2
-60
-50
-55
HD2
-60
-65
-65
-70
-70
-75
HD3
-80
-75
0.5
0
1
2
1.5
2.5
1
0
3
2
3
-40
-45
-45
-50
DISTORTION (dBc)
DISTORTION (dBc)
-40
HD3
HD2
-60
-65
-70
HD2
-55
-60
HD3
-65
VS = ±5V
VOUT = 2VPP
10
20
30
40
50
0
10
20
FREQUENCY (MHz)
40
50
Figure 16. HD2 & HD3 vs. Frequency
2
2
0
0
CL = 100pF, ROUT = 24:
GAIN (dB)
-2
CL = 47pF, ROUT = 30:
-4
30
FREQUENCY (MHz)
Figure 15. HD2 & HD3 vs. Frequency
GAIN (dB)
8
-80
0
CL = 10pF, ROUT = 48:
-6
CL = 100pF, ROUT = 24:
CL = 47pF, ROUT = 30:
-4
CL = 10pF, ROUT = 48:
-6
VS = ±2.5V
VS = ±5V
RL = 1k:||CL
RL = 1k:||CL
-8
VOUT = .8VPP
-10
0.1
10
7
-50
-75
VOUT = 2VPP
-80
-8
6
-70
VS = ±2.5V
-75
-2
5
Figure 14. HD2 & HD3 vs. VOUT
Figure 13. HD2 & HD3 vs. VOUT
-55
4
VOUT (VPP)
VOUT (VPP)
1
VOUT = .8VPP
10
100
1000
-10
0.1
1
10
100
1000
FREQUENCY (MHz)
FREQUENCY (MHz)
Figure 17. Frequency Response vs. CL
Figure 18. Frequency Response vs. CL
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Typical Performance Characteristics (continued)
60
60
50
50
SUGGESTED ROUT
SUGGESTED ROUT
AV = 2, RF = 1200Ω, RL = 100Ω, unless otherwise specified.
40
30
20
10
40
30
20
10
VS = ±2.5V
VS = ±5V
LOAD = 1k:||CL
LOAD = 1k:||CL
0
0
1
10
100
1
1000
10
1000
CAPACITIVE LOAD (pF)
Figure 19. Suggested ROUT vs. CL
Figure 20. Suggested ROUT vs. CL
70
80
PSRR+
PSRR+
70
60
PSRR-
60
50
PSRR-
PSRR (dB)
PSRR (dB)
100
CAPACITIVE LOAD (pF)
40
30
20
50
40
30
20
10
10
VS = ±2.5V
0
0.001
0.01
0.1
1
10
VS = ±5V
0
0.001 0.01
100
0.1
1
10
100
FREQUENCY (MHz)
FREQUENCY (MHz)
Figure 21. PSRR vs. Frequency
Figure 22. PSRR vs. Frequency
70
100
VS = ±5V
60
10
CMRR (dB)
|Z|OUT (:)
50
1
VS = ±2.5V
0.1
VS = ±2.5V
40
30
20
0.01
10
VS = ±5V
0.001
0.001
0.01
0.1
1
10
100
0
0.001
0.01
0.1
1
10
100
FREQUENCY (MHz)
FREQUENCY (MHz)
Figure 23. Closed Loop Output Resistance
Figure 24. CMRR vs. Frequency
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Typical Performance Characteristics (continued)
AV = 2, RF = 1200Ω, RL = 100Ω, unless otherwise specified.
0.03
1
0.11
0.09
0.01
0.07
0
0.05
GAIN
-0.01
0.03
VS = ±5V
f = 4.43MHz
-0.02
0
GAIN (dB)
0.02
DIFFERENTIAL PHASE (°)
DIFFERENTIAL GAIN (%)
PHASE
-1
-2
VS = ±5V
0.01
VOUT = 0.5 VPP
RL = 150:
-0.03
-0.75
RF = 1.1 k:
-0.01
-0.5
-0.25
0
0.25
0.5
-3
0.75
100
10
OUTPUT OFFSET (V) 100 IRE = 0.714V
1k
FREQUENCY (MHz)
Figure 25. Differential Gain & Phase
Figure 26. Channel Matching (LMH6724)
1
-30
-35
-40
CROSSTALK (dBc)
GAIN (dB)
0
-1
-2
-45
CHANNEL A
-50
-55
-60
-65
CHANNEL B
VS = ±2.5V
-70
VOUT = 0.5 VPP
-75
RF = 1.1 k:
-80
-3
100
10
1
1k
10
100
FREQUENCY (MHz)
FREQUENCY (MHz)
Figure 28. Crosstalk (LMH6724)
Figure 27. Channel Matching (LMH6724)
2.5
1
Vs = r5V
0.75
1.5
1
Vout (V)
0.25
Vout (V)
Vs = r5V
2
0.5
0
-0.25
-0.5
0.5
0
-0.5
-1
-0.75
-1.5
-1
-2
-1.25
-2.5
0
5
10
15
Time (nS)
0
20
D001
Figure 29. Output Small Signal Pulse Response
12
1000
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5 10 15 20 25 30 35 40 45 50 55
Time (nS)
D001
Figure 30. Output Large Signal Pulse Response
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7 Application and Implementation
7.1 Application Information
The LMH6723/LMH6724 is a high speed current feedback amplifier manufactured on Texas Instruments' VIP10
(Vertically Integrated PNP) complimentary bipolar process. LMH6723/LMH6724 offers a unique combination of
high speed and low quiescent supply current making it suitable for a wide range of battery powered and portable
applications that require high performance. This amplifier can operate from 4.5V to 12V nominal supply voltages
and draws only 1 mA of quiescent supply current at 10V supplies (±5V typically). The LMH6723/LMH6724 has no
internal ground reference so single or split supply configurations are both equally useful.
7.2 Typical Application
7.3 Evaluation Boards
Texas Instruments provides the following evaluation boards as a guide for high frequency layout and as an aid in
device testing and characterization. Many of the datasheet plots were measured with these boards.
DEVICE
PACKAGE
BOARD PART NUMBER
LMH6723MA
SOIC-8
LMH730227
LMH6723MF
SOT-23
LMH730216
LMH6724MA
SOIC-8
LMH730036
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7.4 Feedback Resistor Selection
One of the key benefits of a current feedback operational amplifier is the ability to maintain optimum frequency
response independent of gain by using appropriate values for the feedback resistor (RF). The Electrical
Characteristics and Typical Performance plots were generated with an RF of 1200Ω, a gain of +2V/V and ±5V or
±2.5V power supplies (unless otherwise specified). Generally, lowering RF from its recommended value will peak
the frequency response and extend the bandwidth; however, increasing the value of RF will cause the frequency
response to roll off faster. Reducing the value of RF too far below it's recommended value will cause overshoot,
ringing, and eventually, oscillation.
2
RF = 800:
1
0
GAIN (dB)
-1
RF = 1200:
-2
RF = 2000:
-3
-4
-5
-6
-7
VS = ±2.5V
VOUT = 1VPP
-8
0.1
1
10
100
1000
FREQUENCY (MHz)
Figure 31. Frequency Response vs. RF
Figure 31 shows the LMH6723/LMH6724's frequency response as RF is varied (RL = 100Ω, AV = +2). This plot
shows that an RF of 800Ω results in peaking. An RF of 1200Ω gives near maximal bandwidth and gain flatness
with good stability. Since each application is slightly different, it is worth experimenting to find the optimal RF for a
given circuit. In general, a value of RF that produces ~0.1 dB of peaking is the best compromise between stability
and maximal bandwidth. Note that it is not possible to use a current feedback amplifier with the output shorted
directly to the inverting input. The buffer configuration of the LMH6723/LMH6724 requires a 2000-Ω feedback
resistor for stable operation. For other gains see the charts Figure 32 and Figure 33. These charts provide a
good place to start when selecting the best feedback resistor value for a variety of gain settings.
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Feedback Resistor Selection (continued)
For more information see Application Note OA-13 which describes the relationship between RF and closed-loop
frequency response for current feedback operational amplifiers. The value for the inverting input impedance for
the LMH6723/LMH6724 is approximately 500 Ω. The LMH6723/LMH6724 is designed for optimum performance
at gains of +1 to +5V/V and −1 to −4V/V. Higher gain configurations are still useful; however, the bandwidth will
fall as gain is increased, much like a typical voltage feedback amplifier.
2500
RF (:)
2000
1500
1000
500
0
1
2
3
4
5
6
7
8
9
10
GAIN (V/V)
Figure 32. RF vs. Non-Inverting Gain
Figure 32 and Figure 33 show the value of RF versus gain. A higher RF is required at higher gains to keep RG
from decreasing too far below the input impedance of the inverting input. This limitation applies to both inverting
and non-inverting configurations. For the LMH6723/LMH6724 the input resistance of the inverting input is
approximately 500Ω and 100Ω is a practical lower limit for RG. The LMH6723/LMH6724 begins to operate in a
gain bandwidth limited fashion in the region where RF must be increased for higher gains. Note that the amplifier
will operate with RG values well below 100 Ω; however, results will be substantially different than predicted from
ideal models. In particular, the voltage potential between the Inverting and Non-Inverting inputs cannot be
expected to remain small.
For inverting configurations the impedance seen by the source is RG || RT. For most sources this limits the
maximum inverting gain since RF is determined by the desired gain as shown in Figure 33. The value of RG is
then RF/Gain. Thus for an inverting gain of −4 V/V the input impedance is equal to 100Ω. Using a termination
resistor, this can be brought down to match a 50-Ω or 75-Ω source; however, a 150Ω source cannot be matched
without a severe compromise in RF.
1400
1200
RF (:)
1000
800
600
400
200
0
1
2
3
4
5
6
7
8
9
10
GAIN (-V/V)
Figure 33. RF vs. Inverting Gain
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7.5 Active Filters
When using any current feedback operational amplifier as an active filter it is necessary to be careful using
reactive components in the feedback loop. Reducing the feedback impedance, especially at higher frequencies,
will almost certainly cause stability problems. Likewise capacitance on the inverting input should be avoided. See
Application Notes OA-07 and OA-26 for more information on Active Filter applications for Current Feedback Op
Amps.
When using the LMH6723/LMH6724 as a low-pass filter the value of RF can be substantially reduced from the
value recommended in the RF vs. Gain charts. The benefit of reducing RF is increased gain at higher
frequencies, which improves attenuation in the stop band. Stability problems are avoided because in the stop
band additional device bandwidth is used to cancel the input signal rather than amplify it. The benefit of this
change depends on the particulars of the circuit design. With a high pass filter configuration reducing RF will
likely result in device instability and is not recommended.
6.8PF
C2
100nF
C1
RIN
75:
X1
+
+
-
-
RG
1.2k:
ROUT
75:
RF
1.2k:
100nF
C3
6.8PF
C4
Figure 34. Typical Application with Suggested Supply Bypassing
X1
+
+
RIN
51:
RG
1.2k:
-
-
ROUT
51:
CL
10pF
RL
1k:
RF
1.2k:
Figure 35. Decoupling Capacitive Loads
7.6 Driving Capacitive Loads
Capacitive output loading applications will benefit from the use of a series output resistor as shown in Figure 35.
The charts "Suggested ROUT vs. Cap Load" give a recommended value for selecting a series output resistor for
mitigating capacitive loads. The values suggested in the charts are selected for .5 dB or less of peaking in the
frequency response. This gives a good compromise between settling time and bandwidth. For applications where
maximum frequency response is needed and some peaking is tolerable, the value of ROUT can be reduced
slightly from the recommended values.
There will be amplitude lost in the series resistor unless the gain is adjusted to compensate; this effect is most
noticeable with heavy loads (RL < 150Ω).
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Driving Capacitive Loads (continued)
An alternative approach is to place ROUT inside the feedback loop as shown in Figure 36. This will preserve gain
accuracy, but will still limit maximum output voltage swing.
X1
+
+
RIN
51:
-
RG
1.2k:
ROUT
51:
-
CL
10pF
RL
1k:
RF
1.2k:
Figure 36. Series Output Resistor Inside Feedback Loop
7.7 Inverting Input Parasitic Capacitance
Parasitic capacitance is any capacitance in a circuit that was not intentionally added. It is produced through
electrical interaction between conductors and can be reduced but never entirely eliminated. Most parasitic
capacitances that cause problems are related to board layout or lack of termination on transmission lines. See
Layout Considerations for hints on reducing problems due to parasitic capacitances on board traces.
Transmission lines should be terminated in their characteristic impedance at both ends.
High speed amplifiers are sensitive to capacitance between the inverting input and ground or power supplies.
This shows up as gain peaking at high frequency. The capacitor raises device gain at high frequencies by
making RG appear smaller. Capacitive output loading will exaggerate this effect.
One possible remedy for this effect is to slightly increase the value of the feedback (and gain set) resistor. This
will tend to offset the high frequency gain peaking while leaving other parameters relatively unchanged. If the
device has a capacitive load as well as inverting input capacitance, using a series output resistor as described in
Driving Capacitive Loads will help.
C1
680 pF
R11
20:
R8
3.5 k:
(2)
+
R9
3.5 k:
(3)
+
R10
3.5 k:
ein
R3
50:
R1
750:
+ (1)
-
R2
3 k:
(4)
+
R4
1:
R5
1:
R6
1:
R7
1:
OUTPUT
Figure 37. High Output Current Composite Amplifier
When higher currents are required than a single amplifier can provide, the circuit of Figure 37 can be used.
Careful attention to a few key components will optimize performance from this circuit. The first thing to note is
that the buffers need slightly higher value feedback resistors than if the amplifiers were individually configured.
As well, R11 and C1 provide mid circuit frequency compensation to further improve stability. The composite
amplifier has approximately twice the phase delay of a single circuit. The larger values of R8, R9 and R10, as well
as the high frequency attenuation provided by C1 and R11, ensure that the circuit does not oscillate.
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Inverting Input Parasitic Capacitance (continued)
Resistors R4, R5, R6, and R7 are necessary to ensure even current distribution between the amplifiers. Since they
are inside the feedback loop they have no effect on the gain of the circuit. The circuit shown in Figure 37 has a
gain of 5. The frequency response of this circuit is shown in Figure 38.
14
180
13
135
12
90
11
45
PHASE (°)
GAIN (dB)
GAIN
PHASE
10
0
-45
9
VS = ±5V
8
VOUT = 2.5 VPP
7
RL = 5.6:
-90
-135
AV = 5
-180
6
1
10
100
FREQUENCY (MHz)
Figure 38. Composite Amplifier Frequency Response
7.8 Layout Considerations
Whenever questions about layout arise, use the evaluation board as a guide. Evaluation boards are shipped with
sample requests.
To reduce parasitic capacitances ground and power planes should be removed near the input and output pins.
Components in the feedback loop should be placed as close to the device as possible. For long signal paths
controlled impedance lines should be used, along with impedance matching at both ends.
Bypass capacitors should be placed as close to the device as possible. Bypass capacitors from each rail to
ground are applied in pairs. The larger electrolytic bypass capacitors can be located anywhere on the board;
however, the smaller ceramic capacitors should be placed as close to the device as possible.
7.9 Video Performance
The LMH6723/LMH6724 has been designed to provide good performance with both PAL and NTSC composite
video signals. The LMH6723/LMH6724 is specified for PAL signals. Typically, NTSC performance is marginally
better due to the lower frequency content of the signal. Performance degrades as the loading is increased;
therefore, best performance will be obtained with back terminated loads. The back termination reduces
reflections from the transmission line and effectively masks transmission line and other parasitic capacitances
from the amplifier output stage. Figure 34 shows a typical configuration for driving a 75Ω cable. The amplifier is
configured for a gain of 2 to make up for the 6dB of loss in ROUT.
7.10 Single 5-V Supply Video
With a 5V supply the LMH6723/LMH6724 is able to handle a composite NTSC video signal, provided that the
signal is AC coupled and level shifted so that the signal is centered around VCC/2.
7.10.1 Application Curves
See Figure 31 through Figure 33 and Figure 38.
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8 Power Supply Recommendations
Follow these steps to determine the maximum power dissipation for the LMH6723/LMH6724:
1. Calculate the quiescent (no-load) power: PAMP = ICC * (VS)
where VS = V+ - V2. Calculate the RMS power dissipated in the output stage: PD (rms) = rms ((VS-VOUT)*IOUT) where VOUT and
IOUT are the voltage and current of the external load and Vs is the supply voltage.
3. Calculate the total RMS power: PT = PAMP +PD
The maximum power that the LMH6723/LMH6724 package can dissipate at a given temperature can be derived
with the following equation:
PMAX = (150º - TAMB)/ RθJA
where
•
•
TAMB = Ambient temperature (°C)
RθJA = Thermal resistance, from junction to ambient, for a given package (°C/W)
(1)
For the SOIC-8 package RθJA is 166°C/W and for the SOT-23-5 it is 230°C/W.
8.1 ESD Protection
The LMH6723/LMH6724 is protected against electrostatic discharge (ESD) on all pins. The LMH6723 will survive
2000V Human Body Model or 200V Machine Model events.
Under closed loop operation the ESD diodes have no effect on circuit performance. There are occasions,
however, when the ESD diodes will be evident. If the LMH6723/LMH6724 is driven into a slewing condition the
ESD diodes will clamp large differential voltages until the feedback loop restores closed loop operation. Also, if
the device is powered down and a large input signal is applied, the ESD diodes will conduct.
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9 Device and Documentation Support
9.1 Related Links
The table below lists quick access links. Categories include technical documents, support and community
resources, tools and software, and quick access to sample or buy.
Table 1. Related Links
PARTS
PRODUCT FOLDER
SAMPLE & BUY
TECHNICAL
DOCUMENTS
TOOLS &
SOFTWARE
SUPPORT &
COMMUNITY
LMH6723
Click here
Click here
Click here
Click here
Click here
LMH6724
Click here
Click here
Click here
Click here
Click here
9.2 Trademarks
All trademarks are the property of their respective owners.
9.3 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
9.4 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
10 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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6-Nov-2021
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
LMH6723 MWC
ACTIVE
WAFERSALE
YS
0
1
TBD
Call TI
Call TI
-40 to 85
LMH6723MA
NRND
SOIC
D
8
95
Non-RoHS
& Green
Call TI
Level-1-235C-UNLIM
-40 to 85
LMH67
23MA
LMH6723MA/NOPB
ACTIVE
SOIC
D
8
95
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
LMH67
23MA
LMH6723MAX/NOPB
ACTIVE
SOIC
D
8
2500
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
LMH67
23MA
LMH6723MF/NOPB
ACTIVE
SOT-23
DBV
5
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
AB1A
LMH6723MFX
NRND
SOT-23
DBV
5
3000
Non-RoHS
& Green
Call TI
Level-1-260C-UNLIM
-40 to 85
AB1A
LMH6723MFX/NOPB
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
AB1A
LMH6724MA/NOPB
ACTIVE
SOIC
D
8
95
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
LMH67
24MA
LMH6724MAX/NOPB
ACTIVE
SOIC
D
8
2500
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
LMH67
24MA
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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