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LMP8350
SNOSB80C – FEBRUARY 2011 – REVISED OCTOBER 2015
LMP8350 Ultra-Low Distortion Fully-Differential Precision ADC Driver With Selectable
Power Modes
1 Features
3 Description
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The LMP8350 device is an ultra low distortion fullydifferential amplifier designed for driving highperformance precision analog-to-digital converters
(ADC). As part of the PowerWise™ family, a unique
mode enable pin allows the user to choose from three
different
operating
modes,
trading
power
consumption for dynamic performance.
1
Differential Input and Output
Tri-Level Power Settings with Shutdown
Ultra Low HD2/HD3 and THD+N Distortion
Adjustable Output Common-Mode Level
Fully-Balanced Differential Architecture
Single- or Dual-Supply Operation
Operating Voltage Range 4.5 V to 12 V
Supply Current 3 mA to 13 mA
Total THD+N at 1 KHz 0.000097%
HD2 / HD3 Distortion at 1 KHz < –124 dBc
Bandwidth 118 mHz
Settling to 0.1% 20 ns
Low Offset Drift 0.4 µV/°C
Offset Voltage 80 µV
Voltage Noise 4.6 nV/Hz
Operating Temperature Range −40°C to +85°C
The high power mode is optimized for highest AC
performance. The low noise, wide bandwidth, and
fast slew rate make the LMP8350 ideal for driving 24bit ADCs with input sampling rates of 10 MHz or less.
The medium power mode is optimized for precision
DC performance, and can be used to drive 24-bit
ADCs with input sampling rates of 6 MHz or less. The
low power mode is a trade-off between AC
performance and quiescent current for powersensitive applications. The disable mode fully shuts
down the amplifier for further standby power savings.
The fully differential architecture of this device allows
for easy implementation of a single-ended to fullydifferential output conversion. Driving a 3-Vpp, 1-kHz
output sine wave with the amplifier powered by ±3.3V rails in high power mode yields 0.000098%
THD+N.
2 Applications
•
•
•
High-Resolution Differential ADC Drivers
Portable Instrumentation
Precision Line Drivers
The LMP8350 is part of the LMP™ precision amplifier
family, and is offered in the 8-pin SOIC package, with
an operating temperature range of −40°C to +85°C.
Device Information(1)
PART NUMBER
LMP8350
PACKAGE
SOIC (8)
BODY SIZE (NOM)
3.91 mm × 4.90 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Typical Application
+VREF
+V
+V
VREFP
VA
VIO
+V
RF1
RO1
RG1
VINN
CS
- +
VOCM
+ VINP
CS
LMP8350
SCLK
24 Bit A/D
RO2
VINP
+ RG2
- VINN
SDI
SDO
MicroController
VREFN AGND DGND
RF2
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
LMP8350
SNOSB80C – FEBRUARY 2011 – REVISED OCTOBER 2015
www.ti.com
Table of Contents
1
2
3
4
5
6
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
6.1
6.2
6.3
6.4
6.5
6.6
6.7
6.8
7
1
1
1
2
3
3
Absolute Maximum Ratings ...................................... 3
ESD Ratings.............................................................. 4
Recommended Operating Conditions....................... 4
Thermal Information .................................................. 4
10-V Electrical Characteristics .................................. 5
6.6-V Electrical Characteristics ................................. 8
5-V Electrical Characteristics .................................. 11
Typical Characteristics ............................................ 14
Detailed Description ............................................ 19
7.1 Overview ................................................................. 19
7.2 Functional Block Diagram ....................................... 19
7.3 Feature Description................................................. 19
7.4 Device Functional Modes........................................ 20
8
Application and Implementation ........................ 22
8.1 Application Information............................................ 22
8.2 Typical Application ................................................. 25
9
Power Supply Recommendations...................... 27
9.1 Power Supply and VOCM Bypassing ....................... 27
10 Layout................................................................... 28
10.1
10.2
10.3
10.4
Layout Guidelines .................................................
Layout Example ....................................................
Power Dissipation .................................................
Evaluation Board...................................................
28
28
29
29
11 Device and Documentation Support ................. 30
11.1
11.2
11.3
11.4
11.5
Documentation Support .......................................
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
30
30
30
30
30
12 Mechanical, Packaging, and Orderable
Information ........................................................... 30
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision B (March 2013) to Revision C
•
Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section. ................................................................................................ 1
Changes from Revision A (March 2013) to Revision B
•
2
Page
Page
Changed layout of National Data Sheet to TI format ........................................................................................................... 29
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SNOSB80C – FEBRUARY 2011 – REVISED OCTOBER 2015
5 Pin Configuration and Functions
D Package
8-Pin SOIC
Top View
1
-IN
8
-
2
VOCM
V+
+OUT
+
+IN
7
3
6
4
5
EN
V-
-OUT
Pin Functions
PIN
NO.
NAME
I/O
DESCRIPTION
1
–IN
I
Inverting Input
2
VOCM
I
Output common-mode voltage set input. Sets output common mode voltage equal to the
applied VOCM pin voltage.
3
V+
I
Positive power supply voltage
4
+OUT
O
Noninverting output
5
–OUT
O
Inverting output
6
V–
I
Negative power supply voltage
7
EN
I
Enable and power select input. Applied voltage sets power level or shutdown mode.
8
+IN
I
Noninverting Input
6 Specifications
6.1 Absolute Maximum Ratings (1) (2) (3)
MIN
MAX
UNIT
–0.3
12.9
V
(V+) + 0.3
(V–) – 0.3
V
1
mA
150
°C
150
°C
Output short circuit duration
See
V+ relative to V–
IN+, IN–, OUT, EN and VOCM pins
Input current
Junction temperature (5)
−65
Storage temperature, Tstg
(1)
(2)
(3)
(4)
(5)
(4)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
If Military/Aerospace specified devices are required, please contact the TI Sales Office/ Distributors for availability and specifications.
For soldering specifications: SNOA549
The short circuit test is a momentary test which applies to both single-supply and split-supply operation. Continuous short circuit
operation at elevated ambient temperature can exceed the maximum allowable junction temperature of 150°C. Positive number (+) is
sourcing, negative number (–) is sinking.
The maximum power dissipation is a function of TJ(MAX), θJA. The maximum allowable power dissipation at any ambient temperature is
PD = (TJ(MAX) – TA)/ θJA. All numbers apply for packages soldered directly onto a PC Board.
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SNOSB80C – FEBRUARY 2011 – REVISED OCTOBER 2015
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6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
(3)
Electrostatic
discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) (2)
±2500
Charged-device model (CDM), per JEDEC specification JESD22-C101 (3)
±1250
Machine Model
±200
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Manufacturing with
less than 500-V HBM is possible with the necessary precautions.
Human Body Model, applicable std. MIL-STD-883, Method 3015.7. Machine Model, applicable std. JESD22-A115-A (ESD MM std. of
JEDEC). Field-Induced Charge-Device Model, applicable std. JESD22-C101-C (ESD FICDM std. of JEDEC).
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
(1)
See
MIN
MAX
Temperature range (TA)
–40
85
°C
Supply voltage (VS = V+ – V–)
4.5
12
V
(1)
UNIT
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not ensured. For ensured specifications and the test
conditions, see the Electrical Characteristics Tables.
6.4 Thermal Information
LMP8350
THERMAL METRIC (1)
D (SOIC)
UNIT
8 PINS
RθJA
(1)
(2)
4
Junction-to-ambient thermal resistance
(2)
150
°C/W
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
The maximum power dissipation is a function of TJ(MAX), θJA. The maximum allowable power dissipation at any ambient temperature is
PD = (TJ(MAX) – TA)/ θJA. All numbers apply for packages soldered directly onto a PC Board.
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SNOSB80C – FEBRUARY 2011 – REVISED OCTOBER 2015
6.5 10-V Electrical Characteristics
Unless otherwise specified, all limits are ensured for TA = 25°C, Avcl = +1, RF = RG = 1 kΩ, Fully differential input, VS = +10
V, RL = 2 kΩ//20 pF differentially, Input CMR and VOCM = mid-supply and HP mode unless otherwise noted. (1)
TEST CONDITIONS (2)
PARAMETER
MIN (3)
TYP (4)
MAX (3)
UNIT
10-V DC CHARACTERISTICS
TA = 25°C
High power
Input offset voltage
(RTI)
VOS
±0.6
At the temperature extremes
TA = 25°C
Mid power
±0.08
At the temperature extremes
±0.1
At the temperature extremes
±0.5
Low power
±0.4
Input bias current
TA = 25°C
Mid power
Low power
AVOL
Open-loop gain
CMVR
CMRR
Common-mode voltage range (6)
Common-mode rejection ratio
2
2.1
TA = 25°C
2.7
At the temperature extremes
3.2
TA = 25°C
3.5
At the temperature extremes
65
90
Mid power
72
130
Low power
74
114
HP at CMRR ≥ 73 dB
1.2
8.8
MP at CMRR ≥ 83 dB
1.2
8.8
LP at CMRR ≥ 77 dB
1.2
8.8
DC, VOCM = 0,VID = 0, ΔVcm = ±0.2 V, High power
75
90
Medium power
84
130
Low power
79
114
Differential input resistance
VCM = mid-supply
0.48
Differential input capacitance
VCM = mid-supply
1
High power
Mid power
Low power
(1)
(2)
(3)
(4)
(5)
(6)
μA
3.7
High power
CIND
Output swing
(single-ended)
μV/°C
At the temperature extremes
ZIND
VO
±2.5
±0.8
Input offset voltage vs.temperature (5) Mid power
High power
IB
mV
±2.52
High power
TCVOS
±2
±2.03
TA = 25°C
Low power
±4
±4.05
dB
V
dB
MΩ
pF
Low Swing
0.86
0.75
9.14
High Swing
0.86
9.25
9.14
Low Swing
0.85
0.74
9.15
High Swing
0.85
9.26
9.15
Low Swing
0.86
0.81
9.14
High Swing
0.86
9.19
9.14
V
Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the device such that TJ = TA. No ensured specification of parametric performance is indicated in the electrical
tables under conditions of internal self-heating where TJ > TA
For annotation brevity, “HP”=High Power, “MP”=Medium Power, “LP” =Low Power, “DIS”=Disabled or shut down, “SE”=Single Ended
Mode, “DM”=Differential Mode. See Table 1 in Applications section for power setting details. It is also assumed RG = RG1 = RG2
Limits are 100% production tested at 25°C. Limits over the operating temperature range are ensured through correlations using the
Statistical Quality Control (SQC) method.
Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and will also depend on the application and configuration. The typical values are not tested and are not ensured on shipped
production material.
Drift Determined by dividing the change in parameter at temperature extremes by the total temperature change. Value is the worst case
of TaMIN to 25°C and 25°C to TaMAX.
At amplifier inputs.
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10-V Electrical Characteristics (continued)
Unless otherwise specified, all limits are ensured for TA = 25°C, Avcl = +1, RF = RG = 1 kΩ, Fully differential input, VS = +10
V, RL = 2 kΩ//20 pF differentially, Input CMR and VOCM = mid-supply and HP mode unless otherwise noted.(1)
TEST CONDITIONS (2)
PARAMETER
Output shorted to midsupply (7)
High power
ISHORT
Short-circuit current
Medium power
Low power
PSRR
Power supply rejection ratio
VS ±10%
Supply current
TYP (4)
Low Swing
–36
-65
High Swing
75
108
Low Swing
-26
-48
High Swing
60
85
Low Swing
-6
-20
High Swing
15
107
Mid power
118
Low power
124
TA = 25°C
15
At the temperature extremes
TA = 25°C
VEN = 6.25 (8)
TA = 25°C
PD
Power-down mode
At the temperature extremes
Shutdown current
Enable time
dB
18
10
TA = 25°C
mA
4
5
< 1.65
0.75
At the temperature extremes
Enable pin current
ten
mA
11
3
Disable voltage threshold (8)
UNIT
20
8
At the temperature extremes
VEN = 3.75 (8)
MAX (3)
36
High power
VEN = 8.75 (8)
IS
MIN (3)
V
0.9
0.95
100
High power
15
Mid power
20
Low power
40
High power
118
Mid power
87
Low power
31
High power
507
Mid power
393
Low power
178
mA
μA
ns
10-V AC CHARACTERISTICS
SSBW
SR
Small signal bandwidth
200 mVp-p differential
Slew rate
2 Vp-p differential (9)
High power
trise
tfall
ts
en
(7)
(8)
(9)
6
Rise time
2 Vp-p differential
Fall time
2 Vp-p differential
0.1% settling time
2 Vp-p
Input referred voltage noise
at 10 KHz
MHz
V/μs
3
Mid power
3.9
Low power
9.7
High power
2.8
Mid power
3.8
Low power
9.6
2-V step, CL = 20 pF
High power
20
Mid power
25
Low power
38
High power
4.6
Mid power
4.8
Low power
8
ns
ns
ns
nV/√Hz
The short circuit test is a momentary test which applies to both single-supply and split-supply operation. Continuous short circuit
operation at elevated ambient temperature can exceed the maximum allowable junction temperature of 150°C. Positive number (+) is
sourcing, negative number (–) is sinking.
Enable voltage is referred to V– (negative supply voltage).
Slew Rate is the average of the rising and falling edges.
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10-V Electrical Characteristics (continued)
Unless otherwise specified, all limits are ensured for TA = 25°C, Avcl = +1, RF = RG = 1 kΩ, Fully differential input, VS = +10
V, RL = 2 kΩ//20 pF differentially, Input CMR and VOCM = mid-supply and HP mode unless otherwise noted.(1)
TEST CONDITIONS (2)
PARAMETER
In
THD+N
Input referred current noise
at 10 KHz
Total harmonic distortion + noise
3 Vp-p at 1 KHz
2nd harmonic distortion
3 Vp-p, 1 KHz
HD2
2nd harmonic distortion
6 Vp-p, 1 KHz
3rd harmonic distortion
3 Vp-p, 1 KHz
HD3
3rd harmonic distortion
6 Vp-p, 1 KHz
MIN (3)
TYP (4)
f = 10 kHz
High power
1.7
Mid power
1.1
Low power
0.6
High power
0.000097%
Mid power
0.000109%
Low power
0.000185%
High power
–124.7
Mid power
–122.8
Low power
–117.2
High power
–118.9
Mid power
–117.6
Low power
–114.7
High power
–139.9
Mid power
–141.9
Low power
–133.3
High power
–129.5
Mid power
–132.4
Low power
–129.4
High power
4.8
MAX (3)
UNIT
pA/√Hz
–116
dBc
dBc
–126
dBc
dBc
10-V VOCM INPUT CHARACTERISTICS
VOCM small signal bandwidth
200 mVp-p
Mid power
2.4
Low power
0.64
High power
±1.62
Mid power
±0.23
Low power
±0.43
VOCM gain
VOCM offset voltage
1
VOCM voltage range
All power levels
VOCM input resistance
All power levels
Low Swing
1.8
High Swing
8.2
Low Swing
30
High Swing
mid-supply
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MHz
V/V
mV
V
KΩ
7
LMP8350
SNOSB80C – FEBRUARY 2011 – REVISED OCTOBER 2015
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6.6 6.6-V Electrical Characteristics
Unless otherwise specified, all limits are ensured for TA = 25°C, Avcl = +1, RF = RG = 1 kΩ, Fully differential input, VS = +6.6
V, RL = 2 kΩ//20 pF differentially, Input CMR and VOCM = mid-supply and HP mode unless otherwise noted. (1)
TEST CONDITIONS (2)
PARAMETER
MIN (3)
TYP (4)
MAX (3)
UNIT
6.6-V DC CHARACTERISTICS
TA = 25°C
High power
Input offset voltage
(RTI)
VOS
S
Input offset voltage
vs.temperature (5)
IB
Input bias current
±0.1
At the temperature extremes
±0.1
At the temperature extremes
±0.7
Mid power
±0.5
Low power
±0.4
Low power
±2.5
μV/°C
TA = 25°C
1.4
At the temperature extremes
2.4
TA = 25°C
2.5
At the temperature extremes
3.0
TA = 25°C
3.5
At the temperature extremes
65
70
Mid power
73
76
Low power
72
75
HP at CMRR ≥ 68 dB
1.2
5.4
CMVR Common-mode voltage range (6) MP at CMRR ≥ 63 dB
1.2
5.4
LP at CMRR ≥ 79 dB
1.2
5.4
DC, VOCM = 0,VID = 0,
ΔVcm = ±0.2 V
High power
70
85
Mid power
86
117
Low power
81
Open-loop gain
CMRR Common-mode rejection ratio
ZIND
Differential input resistance
VCM = mid-supply
CIND
Differential input capacitance
VCM = mid-supply
High power
VO
Output swing
(single-ended)
Mid power
Low power
(1)
(2)
(3)
(4)
(5)
(6)
8
μA
3.7
High power
AVOL
mV
±2.52
High power
Mid power
±2.8
±2.83
TA = 25°C
High power
±3.5
±3.54
TA = 25°C
Mid power
Low power
TCVO
±0.3
At the temperature extremes
dB
V
dB
113
0.48
MΩ
1
pF
Low Swing
0.84
0.77
5.76
High Swing
0.84
5.83
5.76
Low Swing
0.82
0.75
5.78
High Swing
0.82
5.83
5.78
Low Swing
0.83
0.77
5.77
High Swing
0.83
5.83
5.77
V
Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the device such that TJ = TA. No ensured specification of parametric performance is indicated in the electrical
tables under conditions of internal self-heating where TJ > TA
For annotation brevity, “HP”=High Power, “MP”=Medium Power, “LP” =Low Power, “DIS”=Disabled or shut down, “SE”=Single Ended
Mode, “DM”=Differential Mode. See Table 1 in Applications section for power setting details. It is also assumed RG = RG1 = RG2
Limits are 100% production tested at 25°C. Limits over the operating temperature range are ensured through correlations using the
Statistical Quality Control (SQC) method.
Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and will also depend on the application and configuration. The typical values are not tested and are not ensured on shipped
production material.
Drift Determined by dividing the change in parameter at temperature extremes by the total temperature change. Value is the worst case
of TaMIN to 25°C and 25°C to TaMAX.
At amplifier inputs.
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6.6-V Electrical Characteristics (continued)
Unless otherwise specified, all limits are ensured for TA = 25°C, Avcl = +1, RF = RG = 1 kΩ, Fully differential input, VS = +6.6
V, RL = 2 kΩ//20 pF differentially, Input CMR and VOCM = mid-supply and HP mode unless otherwise noted.(1)
TEST CONDITIONS (2)
PARAMETER
Output shorted to
mid-supply (7)
High power
ISHORT Short-circuit current
Mid power
Low power
PSRR
Power supply rejection ratio
VS ±10%
Supply current
TYP (4)
Low Swing
–30
–49
High Swing
54
83
Low Swing
–19
–35
High Swing
40
64
Low Swing
–6
–15
High Swing
15
111
Mid power
117
Low power
127
VEN = 4.125 (8)
VEN = 2.475 (8)
TA = 25°C
TA = 25°C
ten
Power-down mode
Enable time
Shutdown current
mA
dB
16
9
10
2
At the temperature extremes
TA = 25°C
UNIT
18
7
At the temperature extremes
Disable voltage threshold (8)
PD
14
At the temperature extremes
TA = 25°C
MAX (3)
27
High power
VEN = 5.775 (8)
IS
MIN (3)
mA
3
4
TA
Limits are 100% production tested at 25°C. Limits over the operating temperature range are ensured through correlations using the
Statistical Quality Control (SQC) method.
Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and will also depend on the application and configuration. The typical values are not tested and are not ensured on shipped
production material.
Drift Determined by dividing the change in parameter at temperature extremes by the total temperature change. Value is the worst case
of TaMIN to 25°C and 25°C to TaMAX.
At amplifier inputs.
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5-V Electrical Characteristics (continued)
Unless otherwise specified, all limits are ensured for TA = 25°C, Avcl = +1, RF= RG = 1 kΩ, Fully differential input, VS = +5 V,
RL = 2 kΩ//20 pF differentially, Input CMR and VOCM = mid-supply and HP mode unless otherwise noted.(1)
PARAMETER
Output shorted to
mid-supply (6)
High power
ISHORT Short-circuit current
Mid power
Low power
PSRR
Power supply rejection ratio
VS ±10%
Supply current
TYP (3)
Low Swing
–25
–42
High Swing
44
72
Low Swing
–16
–31
High Swing
34
57
Low Swing
–5
–13
High Swing
12
117
Mid power
120
Low power
111
VEN = 3.125 (7)
VEN = 1.875 (7)
TA = 25°C
13
At the temperature extremes
TA = 25°C
At the temperature extremes
PD
ten
Power-down mode
Enable time
Shutdown current
mA
dB
15
9
10
2
At the temperature extremes
Disable voltage threshold (7)
mA
3
4
