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LMP8601, LMP8601-Q1
LMP8602, LMP8602-Q1
LMP8603, LMP8603-Q1
SNOSAR2H – SEPTEMBER 2008 – REVISED APRIL 2016
LMP860x, LMP860x-Q1 60-V, Bidirectional, Low- or High-Side, Voltage-Output,
Current-Sensing Amplifiers
1 Features
3 Description
•
•
•
•
•
•
•
•
•
•
•
•
The LMP8601, LMP8602, LMP8603 (LMP860x) and
LMP8601-Q1,
LMP8602-Q1,
LMP8603-Q1
(LMP860x-Q1) devices are fixed-gain, precision
current-sense amplifiers (also referred to as currentshunt monitors). The input common-mode voltage
range is –22 V to +60 V when operating from a single
5-V supply, or –4 V to +27 V with a 3.3-V supply. The
LMP860x and LMP860x-Q1 are ideal parts for
unidirectional and bidirectional current sensing
applications.
1
Gain = 20x for LMP8601 and LMP8601-Q1
Gain = 50x for LMP8602 and LMP8602-Q1
Gain = 100x for LMP8603 and LMP8603-Q1
TCVOS: 10 μV/°C Maximum
CMRR: 90-dB Minimum
Input Offset Voltage: 1-mV Maximum
CMVR at VS = 3.3 V: –4 V to 27 V
CMVR at VS = 5 V: –22 V to 60 V
Single-Supply Bidirectional Operation
All Minimum and Maximum Limits 100% Tested
Q1 Devices Qualified for Automotive Applications
Q1 Devices ACE-Q100 Qualified With the
Following Results:
– Device Temperature Grade 1: –40°C to 125°C
Ambient Operating Temperature Range
– Device Temperature Grade 0: –40°C to 150°C
(LMP8601EDRQ1 Only)
– Device HBM ESD Classification Level 2
(3A on inputs)
– Device CDM ESD Classification Level C6
– Device MM ESD Classification Level M2
•
•
•
•
•
•
The offset input pin enables these devices for
unidirectional or bidirectional single supply voltage
current sensing.
The LMP860x-Q1 devices incorporate enhanced
manufacturing and support processes for the
automotive market and are compliant with the AECQ100 standard.
2 Applications
•
These devices have a precise gain of 20x (LPM8601,
LPM8601-Q1), 50x (LPM8602, LPM8602-Q1), and
100x (LPM8603, LPM8603-Q1), and are adequate in
most targeted applications to drive an ADC to fullscale value. The fixed gain is achieved in two
separate stages: a preamplifier with a gain of 10x and
an output stage buffer amplifier with a gain of 2x
(LMP8601, LMP8601-Q1), 5x (LMP8602, LMP8602Q1), or 10x (LMP8603, LMP8603-Q1). The path
between the two stages is brought out on two pins to
enable the option of an additional filter network or
modifying the gain.
High-Side and Low-Side Driver Configuration
Current Sensing
Bidirectional Current Measurement
Current Loop to Voltage Conversion
Automotive Fuel Injection Control
Transmission Control
Power Steering
Battery Management Systems
Device Information(1)
PART NUMBER
PACKAGE
LMP860x
LMP860x-Q1
LMP8602, LMP8603
LMP8602-Q1, LMP8603-Q1
BODY SIZE (NOM)
SOIC (8)
4.90 mm x 3.91 mm
VSSOP (8)
3.00 mm × 3.00 mm
(1) For all available packages, see the package option addendum
at the end of the data sheet.
Typical Applications
D
+5V
48V
-
-
+
IC
IL
load
G
IB
+
+
48V
Inductive
Load
+5V
S
+3.3V
+
D
-
+
Charger
-
G
+
Inductive
Load
-
S
24V
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
LMP8601, LMP8601-Q1
LMP8602, LMP8602-Q1
LMP8603, LMP8603-Q1
SNOSAR2H – SEPTEMBER 2008 – REVISED APRIL 2016
www.ti.com
Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
6.1
6.2
6.3
6.4
6.5
6.6
6.7
6.8
4
4
4
4
5
5
7
9
Absolute Maximum Ratings ......................................
ESD Ratings: LMP860x ............................................
ESD Ratings: LMP860x-Q1 ......................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics: VS = 3.3 V........................
Electrical Characteristics: VS = 5 V...........................
Typical Characteristics ..............................................
Detailed Description ............................................ 18
7.1 Overview ................................................................. 18
7.2 Functional Block Diagram ....................................... 18
7.3 Feature Description................................................. 19
7.4 Device Functional Modes........................................ 22
8
Application and Implementation ........................ 26
8.1 Application Information............................................ 26
8.2 Typical Applications ............................................... 26
9 Power Supply Recommendations...................... 31
10 Layout................................................................... 31
10.1 Layout Guidelines ................................................. 31
10.2 Layout Example .................................................... 31
11 Device and Documentation Support ................. 32
11.1
11.2
11.3
11.4
11.5
11.6
Device Support......................................................
Related Links ........................................................
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
32
32
32
32
32
32
12 Mechanical, Packaging, and Orderable
Information ........................................................... 32
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision G (July 2015) to Revision H
Page
•
Added new temperature grade 0 version of LMP8601-Q1..................................................................................................... 1
•
Added LMP8602, LMP8602-Q1, LMP8603, and LMP8603-Q1 devices and related information to data sheet .................... 1
•
Changed Features bullets ..................................................................................................................................................... 1
•
Changed text in Description section ....................................................................................................................................... 1
•
Added new values to Thermal Information table .................................................................................................................... 5
•
Changed RθJA value in Thermal Information table.................................................................................................................. 5
•
Deleted previous Note 1 from Electrical Characteristics tables.............................................................................................. 5
•
Changed all AV1 to K1 throughout data sheet for consistency.............................................................................................. 6
•
Changed all AV2 to K2 throughout data sheet for consistency.............................................................................................. 6
•
Deleted previous Note 1 from Electrical Characteristics tables.............................................................................................. 7
•
Deleted Related Documentation section; SNOSB36 data sheet content now combined with this data sheet .................... 32
Changes from Revision F (January 2014) to Revision G
•
Page
Added ESD Ratings table, and Pin Configuration and Functions, Feature Description, Device Functional Modes,
Application and Implementation, Power Supply Recommendations, Layout, Device and Documentation Support, and
Mechanical, Packaging, and Orderable Information sections. ............................................................................................... 1
Changes from Revision E (March 2013) to Revision F
•
Page
Added four typical curves ..................................................................................................................................................... 17
Changes from Revision D (October 2009) to Revision E
•
2
Page
Changed layout of National Data Sheet to TI format ........................................................................................................... 30
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LMP8601, LMP8601-Q1
LMP8602, LMP8602-Q1
LMP8603, LMP8603-Q1
www.ti.com
SNOSAR2H – SEPTEMBER 2008 – REVISED APRIL 2016
5 Pin Configuration and Functions
D Package
8-Pin SOIC
Top View
DGK Package
8-Pin VSSOP
Top View
-IN
1
8
+IN
GND
2
7
OFFSET
A1
3
6
A2
4
5
-IN
1
8
+IN
GND
2
7
OFFSET
VS
A1
3
6
VS
OUT
A2
4
5
OUT
Pin Descriptions
PIN
NAME
NO.
A1
3
A2
GND
TYPE
DESCRIPTION
O
Preamplifier output
4
I
Input from the external filter network and, or A1
2
P
Power ground
+IN
8
I
Positive input
-IN
1
I
Negative input
OFFSET
7
I
DC offset for bidirectional signals
OUT
5
O
Single-ended output
VS
6
P
Positive supply voltage
Copyright © 2008–2016, Texas Instruments Incorporated
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LMP8601, LMP8601-Q1
LMP8602, LMP8602-Q1
LMP8603, LMP8603-Q1
SNOSAR2H – SEPTEMBER 2008 – REVISED APRIL 2016
www.ti.com
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
MIN
MAX
UNIT
Supply voltage (VS – GND)
–0.3
6
V
Continuous input voltage (–IN and +IN)
–22
60
V
Transient (400 ms)
–25
65
V
VS + 0.3
GND – 0.3
V
LMP8601EDRQ1 only
–40
150
All other devices
–40
125
–40
150
Maximum voltage at A1, A2, OFFSET and OUT pins
Operating temperature, TA
Junction temperature (2)
Mounting temperature
Infrared or convection (20 sec)
235
Wave soldering lead (10 sec)
260
Storage temperature, Tstg
(1)
(2)
–65
°C
°C
°C
150
°C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The maximum power dissipation must be derated at elevated temperatures and is dictated by TJ(MAX), RθJA, and the ambient
temperature, TA. The maximum allowable power dissipation PDMAX = (TJ(MAX) – TA) / RθJA or the number given in Absolute Maximum
Ratings, whichever is lower.
6.2 ESD Ratings: LMP860x
VALUE
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
V(ESD)
Electrostatic
discharge
All pins except 1 and 8
±2000
Pins 1 and 8
±4000
(2)
±1000
Charged-device model (CDM), per JEDEC specification JESD22-C101
Machine model
(1)
(2)
UNIT
V
±200
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 ESD Ratings: LMP860x-Q1
VALUE
Human body model (HBM), per AEC Q100-002 (1)
V(ESD)
(1)
Electrostatic
discharge
All pins except 1 and 8
±2000
Pins 1 and 8
±4000
Charged-device model (CDM), per AEC Q100-011
±1000
Machine model
±200
UNIT
V
AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
6.4 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
Supply voltage (VS – GND)
3
5.5
V
OFFSET voltage (Pin 7)
0
VS
V
LMP8601EDRQ1 only
–40
150
All other devices
–40
125
Operating temperature, TA
(1)
4
(1)
UNIT
°C
The maximum power dissipation must be derated at elevated temperatures and is dictated by TJ(MAX), RθJA, and the ambient
temperature, TA. The maximum allowable power dissipation PDMAX = (TJ(MAX) – TA) / RθJA or the number given in Absolute Maximum
Ratings, whichever is lower.
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LMP8603, LMP8603-Q1
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SNOSAR2H – SEPTEMBER 2008 – REVISED APRIL 2016
6.5 Thermal Information
LMP860x,
LMP860x-Q1
THERMAL METRIC (1)
LMP8602,
LMP8602-Q1,
LMP8603,
LMP8603-Q1
UNIT
D (SOIC)
DGK (VSSOP)
8 PINS
8 PINS
RθJA
Junction-to-ambient thermal resistance (2)
113.1
171.1
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
57.3
64.1
°C/W
RθJB
Junction-to-board thermal resistance
53.5
91.1
°C/W
ψJT
Junction-to-top characterization parameter
11.1
9.4
°C/W
ψJB
Junction-to-board characterization parameter
53.0
89.7
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
N/A
N/A
°C/W
(1)
(2)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
The maximum power dissipation must be derated at elevated temperatures and is dictated by TJ(MAX), RθJA, and the ambient
temperature, TA. The maximum allowable power dissipation PDMAX = (TJ(MAX) – TA) / RθJA or the number given in Absolute Maximum
Ratings, whichever is lower.
6.6 Electrical Characteristics: VS = 3.3 V
at TA = 25°C, VS = 3.3 V, GND = 0 V, –4 V ≤ VCM ≤ 27 V, RL = ∞, OFFSET (pin 7) is grounded, and 10 nF between VS and
GND (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN (1)
TYP (2)
MAX (1)
UNIT
OVERALL PERFORMANCE (FROM -IN (PIN 1) AND +IN (PIN 8) TO OUT (PIN 5) WITH PINS A1 (PIN 3) AND A2 (PIN 4) CONNECTED)
IS
Supply current
AV
Total gain
1
Over full temperature range
19.9
20
20.1
LMP8602, LMP8602-Q1
49.75
50
50.25
LMP8603, LMP8603-Q1
99.5
100
100.5
–2.7
±20
Gain Drift (3)
Over full temperature range
Slew rate (4)
VIN = ±0.165 V
BW
Bandwidth
VOS
Input offset voltage
VCM = VS / 2
TCVOS
Input offset voltage drift (5)
Over full temperature range
en
Input-referred voltage noise
PSRR
Power-supply rejection ratio
(3)
(4)
(5)
mA
V/V
ppm/°C
0.4
0.7
V/μs
50
60
kHz
0.15
±1
mV
2
±10
μV/°C
0.1 Hz - 10 Hz, 6 sigma
16.4
μVP-P
Spectral density, 1 kHz
830
nV/√Hz
86
3.0 V ≤ VS ≤ 3.6 V,
DC, VCM = VS/2
Over full temperature range
LMP8601,
LMP8601-Q1
Input referred
LMP8602,
LMP8602-Q1
LMP8603,
LMP8603-Q1
(1)
(2)
1.3
LMP8601, LMP8601-Q1
SR
Midscale offset scaling accuracy
0.6
dB
70
±0.15%
±0.5%
±0.413
±0.25%
±1%
±0.45%
±1.5%
Input referred
±0.33
Input referred
±0.248
mV
mV
mV
Data sheet min and max limits are specified by test.
Typical values represent the most likely parameter norms at TA = 25°C, and at the Recommended Operation Conditions at the time of
product characterization.
Both the gain of preamplifier K1 and the gain of buffer amplifier K2 are measured individually. The overall gain of both amplifiers (AV) is
also measured to assure the gain of all parts is always within the AV limits.
Slew rate is the average of the rising and falling slew rates.
Offset voltage drift determined by dividing the change in VOS at temperature extremes into the total temperature change.
Copyright © 2008–2016, Texas Instruments Incorporated
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LMP8603, LMP8603-Q1
SNOSAR2H – SEPTEMBER 2008 – REVISED APRIL 2016
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Electrical Characteristics: VS = 3.3 V (continued)
at TA = 25°C, VS = 3.3 V, GND = 0 V, –4 V ≤ VCM ≤ 27 V, RL = ∞, OFFSET (pin 7) is grounded, and 10 nF between VS and
GND (unless otherwise noted)
PARAMETER
MIN (1)
TEST CONDITIONS
TYP (2)
MAX (1)
UNIT
PREAMPLIFIER (FROM INPUT PINS -IN, (PIN 1) AND +IN (PIN 8) TO A1 (PIN 3))
RCM
Input impedance common mode
–4 V ≤ VCM ≤ 27 V
RDM
Input impedance differential mode
–4 V ≤ VCM ≤ 27 V
VOS
Input offset voltage
VCM = VS / 2
DC CMRR
DC common-mode rejection ratio
AC CMRR
AC common-mode rejection ratio (6)
CMVR
Input common-mode voltage range
K1
Preamplifier gain (3)
–2 V ≤ VCM ≤ 24 V
295
Over full temperature range
250
Over full temperature range
500
590
700
±0.15
±1
96
Over full temperature range
f = 1 kHz
80
94
–4
9.95
27
10.0
kΩ
mV
dB
85
Over full temperature range
kΩ
dB
86
f = 10 kHz
for 80-dB CMRR
350
V
10.05
V/V
kΩ
100
RF-INT
Output impedance filter resistor
TCRF-INT
Output impedance filter resistor drift
–40°C ≤ TA ≤ 125°C
99
101
–40°C ≤ TA ≤ 150°C, LMP8601EDRQ1 only
97
103
Over full temperature range
VOL, RL = ∞
A1 VOUT
A1 output voltage swing
VOH, RL = ∞
±5
±50
2
Over full temperature range
10
3.25
Over full temperature range
3.2
Over full temperature range
–2.5
ppm/°C
mV
V
OUTPUT BUFFER (FROM A2 (PIN 4) TO OUT (PIN 5 ))
VOS
Input offset voltage
K2
Output buffer gain (3)
0V ≤ VCM ≤ VS
1.99
2
2.01
LMP8602, LMP8602-Q1
4.975
5
5.025
LMP8603, LMP8603-Q1
9.95
10
10.05
Over full temperature range
VOL, RL = 100 kΩ
A2 output voltage swing (8)
LMP8602,
LMP8602-Q1
(9)
LMP8603,
LMP8603-Q1
VOH, RL = 100 kΩ
ISC
(6)
(7)
(8)
(9)
(10)
6
2
2.5
LMP8601, LMP8601-Q1
LMP8601,
LMP8601-Q1,
A2 VOUT
±0.5
–40
Input bias current of A2 (7),
IB
–2
Output short-circuit current (10)
nA
4
Over full
temperature range
20
10
Over full
temperature range
40
mV
10
Over full
temperature range
80
3.29
Sinking, VIN = GND, VOUT = VS
V/V
fA
±20
Over full temperature range
Sourcing, VIN = VS, VOUT = GND
mV
V
3.28
–25
–38
–60
30
46
65
mA
AC common-mode signal is a 5-VPP sine-wave (0 V to 5 V) at the given frequency.
Positive current corresponds to current flowing into the device.
For this test input is driven from A1 stage.
For VOL, RL is connected to VS and for VOH, RL is connected to GND.
Short-Circuit test is a momentary test. Continuous short circuit operation at elevated ambient temperature can result in exceeding the
maximum allowed junction temperature of 150°C.
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SNOSAR2H – SEPTEMBER 2008 – REVISED APRIL 2016
6.7 Electrical Characteristics: VS = 5 V
at TA = 25°C, VS = 5 V, GND = 0 V, –22 V ≤ VCM ≤ 60 V, RL = ∞, OFFSET (pin 7) is grounded, and 10 nF between VS and
GND (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN (1)
TYP (2)
MAX (1)
UNIT
OVERALL PERFORMANCE (FROM -IN (PIN 1) AND +IN (PIN 8) TO OUT (PIN 5) WITH PINS A1 (PIN 3) AND A2 (PIN 4) CONNECTED)
IS
Supply current
AV
Total gain (3)
1.1
Over full temperature range
19.9
20
20.1
LMP8602, LMP8602-Q1
49.75
50
50.25
LMP8603, LMP8603-Q1
99.5
100
100.5
–2.8
±20
Gain drift
–40°C ≤ TA ≤ 125°C
Slew rate (4)
VIN = ±0.25 V
BW
Bandwidth
VOS
Input offset voltage
TCVOS
Input offset voltage drift (5)
eN
Input-referred voltage noise
PSRR
Power-supply rejection ratio
(3)
(4)
(5)
0.6
0.83
50
60
mA
V/V
ppm/°C
V/μs
kHz
0.15
±1
mV
2
±10
μV/°C
–40°C ≤ TA ≤ 125°C
0.1 Hz - 10 Hz, 6 sigma
17.5
μVP-P
Spectral density, 1 kHz
890
nV/√Hz
90
4.5 V ≤ VS ≤ 5.5 V,
DC
Over full temperature range
LMP8601,
LMP8601-Q1
Input-referred
LMP8602,
LMP8602-Q1
LMP8603,
LMP8603-Q1
(1)
(2)
1.5
LMP8601, LMP8601-Q1
SR
Midscale offset scaling accuracy
0.7
dB
70
±0.15%
±0.5%
±0.625
±0.25%
±1%
±0.45%
±1.5%
Input-referred
±0.50
Input-referred
±0.375
mV
mV
mV
Data sheet min and max limits are specified by test.
Typical values represent the most likely parameter norms at TA = 25°C, and at the Recommended Operation Conditions at the time of
product characterization.
Both the gain of preamplifier K1 and the gain of buffer amplifier K2 are measured individually. The overall gain of both amplifiers (AV) is
also measured to assure the gain of all parts is always within the AV limits.
Slew rate is the average of the rising and falling slew rates.
Offset voltage drift determined by dividing the change in VOS at temperature extremes into the total temperature change.
Copyright © 2008–2016, Texas Instruments Incorporated
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LMP8603, LMP8603-Q1
SNOSAR2H – SEPTEMBER 2008 – REVISED APRIL 2016
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Electrical Characteristics: VS = 5 V (continued)
at TA = 25°C, VS = 5 V, GND = 0 V, –22 V ≤ VCM ≤ 60 V, RL = ∞, OFFSET (pin 7) is grounded, and 10 nF between VS and
GND (unless otherwise noted)
PARAMETER
MIN (1)
TEST CONDITIONS
TYP (2)
MAX (1)
UNIT
PREAMPLIFIER (FROM INPUT PINS -IN (PIN 1) AND +IN (PIN 8) TO A1 (PIN 3))
0 V ≤ VCM ≤ 60 V
RCM
Input impedance, common mode
–20 V ≤ VCM ≤ 0 V
0 V ≤ VCM ≤ 60 V
RDM
Input impedance, differential mode
–20 V ≤ VCM ≤ 0 V
VOS
Input offset voltage
295
Over full temperature range
250
Over full temperature range
165
Over full temperature range
500
Over full temperature range
300
193
DC common-mode rejection ratio
AC CMRR
AC common-mode rejection ratio (6)
CMVR
Input common-mode voltage range
K1
Preamplifier gain (3)
RF-INT
Output impedance filter resistor
–20 V ≤ VCM ≤ 60 V
700
386
500
±0.15
±1
105
Over full temperature range
f = 1 kHz
80
96
–22
9.95
60
10
kΩ
kΩ
kΩ
mV
dB
83
Over full temperature range
kΩ
dB
90
f = 10 kHz
for 80-dB CMRR
250
590
VCM = VS / 2
DC CMRR
350
V
10.05
V/V
kΩ
100
TCRF-INT
–40°C ≤ TA ≤ 125°C,
99
101
–40°C ≤ TA ≤ 150°C, LMP8601EDRQ1 only
97
103
Output impedance filter resistor drift
±5
VOL, RL = ∞
A1 VOUT
A1 output voltage swing
VOH, RL = ∞
±50
2
Over full temperature range
10
4.985
Over full temperature range
4.95
Over full temperature range
–2.5
ppm/°C
mV
V
OUTPUT BUFFER (FROM A2 (PIN 4) TO OUT (PIN 5))
VOS
Input offset voltage
K2
Output buffer gain (3)
0V ≤ VCM ≤ VS
1.99
2
2.01
LMP8602, LMP8602-Q1
4.975
5
5.025
LMP8603, LMP8603-Q1
9.95
10
10.05
Over full temperature range
VOL, RL = ∞
A2 output voltage swing (8)
LMP8602,
LMP8602-Q1
(9)
LMP8602,
LMP8603-Q1
VOH, RL = ∞
ISC
(6)
(7)
(8)
(9)
(10)
8
2
2.5
LMP8601, LMP8601-Q1
LMP8601,
LMP8601-Q1,
A2 VOUT
±0.5
–40
Input bias current of A2 (7)
IB
–2
Output short-circuit current (10)
nA
4
Over full
temperature range
20
10
Over full
temperature range
40
mV
10
Over full
temperature range
80
4.99
Sinking, VIN = GND, VOUT = VS
V/V
fA
±20
Over full temperature range
Sourcing, VIN = VS, VOUT = GND
mV
V
4.98
–25
–42
–60
30
48
65
mA
AC common-mode signal is a 5-VPP sine-wave (0 V to 5 V) at the given frequency.
Positive current corresponds to current flowing into the device.
For this test input is driven from A1 stage.
For VOL, RL is connected to VS and for VOH, RL is connected to GND.
Short-Circuit test is a momentary test. Continuous short circuit operation at elevated ambient temperature can result in exceeding the
maximum allowed junction temperature of 150°C.
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6.8 Typical Characteristics
at TA = 25°C, VS = 5 V, GND = 0 V, –22 ≤ VCM ≤ 60 V, RL = ∞, OFFSET (pin 7) connected to VS, and 10 nF between VS and
GND (unless otherwise noted)
1.0
1.0
0.8
0.8
0.6
125°C
85°C
0.6
VOFFSET (mV)
VOFFSET (mV)
0.4
0.2
0
-0.2
25°C
-0.4
-0.6
0.4
0.2
0
-0.2
-0.4
-40°C
25°C
-40°C
-0.6
-0.8
125°C
85°C
-0.8
VS = 3.3V
-1.0
VS = 5V
-1.0
-4
0
4
8
12
16
20
24
28 30
-20 -10
0
VCM (V)
10
20
30
40
50
60
VCM (V)
Figure 1. VOS vs VCM at VS = 3.3 V
Figure 2. VOS vs VCM at VS = 5 V
100
200
75
150
25°C
100
25°C
IBIAS (µA)
IBIAS (µA)
50
25
125°C
0
50
125°C
0
-40°C
-25
-50
-40°C
-50
-10
0
10
20
-100
-30
30
-10
10
30
50
70
VCM (V)
VCM (V)
Figure 3. Input Bias Current Over Temperature (+IN and –IN
pins) at VS = 3.3 V
Figure 4. Input Bias Current Over Temperature (+IN and –IN
pins) at VS = 5 V
100
200
-40°C
0
100
IBIAS (fA)
IBIAS (pA)
150
50
-100
25°C
125°C
-200
0
-50
0
1
2
3
4
5
VCM (V)
Figure 5. Input Bias Current Over Temperature (A2 pin) at
VS = 5 V
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-300
0
1
2
3
4
5
VCM (V)
Figure 6. Input Bias Current Over Temperature (A2 pin) at
VS = 5 V
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LMP8602, LMP8602-Q1
LMP8603, LMP8603-Q1
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Typical Characteristics (continued)
at TA = 25°C, VS = 5 V, GND = 0 V, –22 ≤ VCM ≤ 60 V, RL = ∞, OFFSET (pin 7) connected to VS, and 10 nF between VS and
GND (unless otherwise noted)
1.5
100
1.2
80
VS = 5V
PSRR (dB)
VOLTAGE NOISE (µV/ Hz)
VS = 5V
0.9
0.6
VS = 3.3V
0.3
VS = 3.3V
60
40
20
0
0.1
1
10
100
1k
10k
0
10
100k
100
FREQUENCY (Hz)
30
-40°C
20
20
10
10
GAIN (dB)
GAIN (dB)
-40°C
25°C
-10
85°C
-30
10k
0
25°C
-10
85°C
-20
-30
125°C
-40 VS = 3.3V
VOUT = VS/2
-50
100
1k
100k
125°C
-40 VS = 5V
VOUT = VS/2
-50
100
1k
1M
120
25°C
-40°C
1M
-40°C
100
100
80
80
85°C
CMRR (dB)
CMRR (dB)
100k
Figure 10. Gain vs Frequency at VS = 5 V
Figure 9. Gain vs Frequency at VS = 3.3 V
120
125°C
60
40
0
100
125°C
85°C
60
40
20
20
10
10k
FREQUENCY (Hz)
FREQUENCY (Hz)
25°C
100k
Figure 8. PSRR vs Frequency
30
-20
10k
FREQUENCY (Hz)
Figure 7. Input-Referred Voltage Noise vs Frequency
0
1k
VS = 3.3V
1k
10k
100k
0
100
VS = 5V
1k
10k
100k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 11. CMRR vs Frequency at VS = 3.3 V
Figure 12. CMRR vs Frequency at VS = 5 V
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Typical Characteristics (continued)
OUTPUT SIGNAL
(1V/DIV)
OUTPUT SIGNAL
(1V/DIV)
INPUT SIGNAL
(100 mV/DIV)
INPUT SIGNAL
(200 mV/DIV)
at TA = 25°C, VS = 5 V, GND = 0 V, –22 ≤ VCM ≤ 60 V, RL = ∞, OFFSET (pin 7) connected to VS, and 10 nF between VS and
GND (unless otherwise noted)
VS = 3.3V
RL = 10 kΩ
VS = 5V
RL = 10 kΩ
TIME (20 µs/DIV)
TIME (20 µs/DIV)
Figure 13. Step Response at VS = 3.3 V
LMP8601 and LMP8601-Q1
INPUT SIGNAL
(200 mV/DIV)
OUTPUT SIGNAL
(1V/DIV)
INPUT SIGNAL
(100 mV/DIV)
OUTPUT SIGNAL
(1V/DIV)
Figure 14. Step Response at VS = 5 V
LMP8601 and LMP8601-Q1
VS = 3.3V
TIME (5 µs/DIV)
TIME (5 µs/DIV)
Figure 16. Settling Time (Falling Edge) at VS = 5 V
LMP8601 and LMP8601-Q1
VS = 3.3V
TIME (5 µs/DIV)
Figure 17. Settling Time (Rising Edge) at VS = 3.3 V
LMP8601 and LMP8601-Q1
Copyright © 2008–2016, Texas Instruments Incorporated
OUTPUT SIGNAL
(1V/DIV)
INPUT SIGNAL
(100 mV/DIV)
OUTPUT SIGNAL
(200 mV/DIV)
Figure 15. Settling Time (Falling Edge) at VS = 3.3 V
LMP8601 and LMP8601-Q1
OUTPUT SIGNAL
(1V/DIV)
VS = 5V
VS = 5V
TIME (5 µs/DIV)
Figure 18. Settling Time (Rising Edge) at VS = 5 V
LMP8601 and LMP8601-Q1
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Typical Characteristics (continued)
OUTPUT SIGNAL
(1V/DIV)
OUTPUT SIGNAL
(1V/DIV)
INPUT SIGNAL
(50 mV/DIV)
INPUT SIGNAL
(50 mV/DIV)
at TA = 25°C, VS = 5 V, GND = 0 V, –22 ≤ VCM ≤ 60 V, RL = ∞, OFFSET (pin 7) connected to VS, and 10 nF between VS and
GND (unless otherwise noted)
TIME (20 Ps/DIV)
Figure 20. Step Response at VS = 5 V, RL = 10 kΩ
LMP8602 and LMP8602-Q1
OTPUT SIGNAL
(1V/DIV)
OUTPUT SIGNAL
(1V/DIV)
INPUT SIGNAL
(50 mV/DIV)
INPUT SIGNAL
(50 mV/DIV)
Figure 19. Step Response at VS = 3.3 V, RL = 10 kΩ
LMP8602 and LMP8602-Q1
TIME (20 Ps/DIV)
TIME (5 Ps/DIV)
OUTPUT SIGNAL
(1V/DIV)
OTPUT SIGNAL
(1V/DIV)
TIME (5 Ps/DIV)
Figure 23. Settling Time (Rising Edge) at VS = 3.3 V
LMP8602 and LMP8602-Q1
12
Figure 22. Settling Time (Falling Edge) at VS = 5 V
LMP8602 and LMP8602-Q1
INPUT SIGNAL
(50 mV/DIV)
INPUT SIGNAL
(50 mV/DIV)
Figure 21. Settling Time (Falling Edge) at VS = 3.3 V
LMP8602 and LMP8602-Q1
TIME (5 us/DIV)
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TIME (5 us/DIV)
Figure 24. Settling Time (Rising Edge) at VS = 5 V
LMP8602 and LMP8602-Q1
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Typical Characteristics (continued)
at TA = 25°C, VS = 5 V, GND = 0 V, –22 ≤ VCM ≤ 60 V, RL = ∞, OFFSET (pin 7) connected to VS, and 10 nF between VS and
GND (unless otherwise noted)
VIN (20 mV/DIV)
8
7
6
5
7
6
5
4
4
3
3
VOUT (1V/DIV)
VOUT (1V/DIV)
VIN (20 mV/DIV)
8
2
1
0
2
1
0
TIME (20 us/DIV)
TIME (20 us/DIV)
INPUT SIGNAL
(20 mV/DIV)
Figure 26. Step Response at VS = 5 V, RL = 10 kΩ
LMP8603 and LMP8603-Q1
OUTPUT SIGNAL
(1V/DIV)
OUTPUT SIGNAL
(1V/DIV)
INPUT SIGNAL
(20 mV/DIV)
Figure 25. Step Response at VS = 3.3 V, RL = 10 kΩ
LMP8603 and LMP8603-Q1
TIME (5 us/DIV)
INPUT SIGNAL
(20 mV/DIV)
Figure 28. Settling Time (Falling Edge) at VS = 5 V
LMP8603 and LMP8603-Q1
OUTPUT SIGNAL
(1V/DIV)
OUTPUT SIGNAL
(1V/DIV)
INPUT SIGNAL
(20 mV/DIV)
Figure 27. Settling Time (Falling Edge) at VS = 3.3 V
LMP8603 and LMP8603-Q1
TIME (5 us/DIV)
TIME (5 us/DIV)
Figure 29. Settling Time (Rising Edge) at VS = 3.3 V
LMP8603 and LMP8603-Q1
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TIME (5 us/DIV)
Figure 30. Settling Time (Rising Edge) at VS = 5 V
LMP8603 and LMP8603-Q1
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Typical Characteristics (continued)
at TA = 25°C, VS = 5 V, GND = 0 V, –22 ≤ VCM ≤ 60 V, RL = ∞, OFFSET (pin 7) connected to VS, and 10 nF between VS and
GND (unless otherwise noted)
3.30
60
50
OUTPUT VOLTAGE (mV)
3.28
OUTPUT VOLTAGE (V)
VS = 3.3V
VIN = 0V
VCM = VS/2
3.26
3.24
3.22
40
30
20
VS = 3.3V
VIN = 165 mV
VCM = VS/2
3.20
1k
10k
10
0
1k
100k
10k
LOAD RESISTANCE (Ω)
LOAD RESISTANCE (Ω)
Figure 32. Negative Swing vs RLOAD at VS = 3.3 V
5.00
90
4.98
75
OUTPUT VOLTAGE (mV)
OUTPUT VOLTAGE (V)
Figure 31. Positive Swing vs RLOAD at VS = 3.3 V
4.96
4.94
4.92
4.90
10k
VS = 5V
VIN = 0V
VCM = VS/2
60
45
30
15
VS = 5V
VIN = 250 mV
VCM = VS/2
4.88
1k
0
1k
100k
10k
LOAD RESISTANCE (Ω)
Figure 34. Negative Swing vs RLOAD at VS = 5 V
25°C
30
25
20
-40°C
PERCENTAGE (%)
PERCENTAGE (%)
30
35
VS = 3.3V
6000 parts
125°C
15
10
5
0
-1.0
VS = 5V
6000 parts
25°C
25
20
-40°C
125°C
15
10
5
-0.6
-0.2 0 0.2
0.6
1.0
VOS (mV)
Figure 35. VOS Distribution at VS = 3.3 V
14
100k
LOAD RESISTANCE (Ω)
Figure 33. Positive Swing vs RLOAD VS = 5 V
35
100k
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0
-1.0
-0.6
-0.2 0 0.2
0.6
1.0
VOS (mV)
Figure 36. VOS Distribution at VS = 5 V
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Typical Characteristics (continued)
at TA = 25°C, VS = 5 V, GND = 0 V, –22 ≤ VCM ≤ 60 V, RL = ∞, OFFSET (pin 7) connected to VS, and 10 nF between VS and
GND (unless otherwise noted)
30
30
1300 parts
1300 parts
VS = 3.3V
25
25
PERCENTAGE (%)
PERCENTAGE (%)
VS = 5V
20
15
10
VS = 5V
20
15
VS = 3.3V
10
5
5
0
-10 -8
-6
-4
-2
0
2
4
6
8
0
-10 -8
10
-6
Figure 37. TCVOS Distribution
VS = 3V3
20
VS = 5V
2
4
6
8
10
VS = 3.3V
VS = 5V
PERCENTAGE (%)
PERCENTAGE (%)
0
Figure 38. Gain Drift Distribution, 1300 Parts
LMP8601 and LMP8601-Q1
12
9
6
3
0
15
10
5
0
-10 -8
-6
-4
-2
0
2
4
6
8
10
-10 -8
GAIN DRIFT (ppm/°C)
-6
-4 -2 0 2 4
GAIN DRIFT (ppm/°C)
6
8
10
Figure 39. Gain Drift Distribution, 5000 Parts
LMP8602 and LMP8602-Q1
Figure 40. Gain Drift Distribution, 5000 Parts
LMP8603 and LMP8603-Q1
20
20
VS = 3.3V
VS = 5V
6000 parts
6000 parts
-40°C
15
10
PERCENTAGE (%)
PERCENTAGE (%)
-2
GAIN DRIFT (ppm/°C)
TCVOS (µV/°C)
15
-4
25°C
125°C
5
0
-0.50
-0.25
0.00
0.25
0.50
15
-40°C
10
25°C
125°C
5
0
-0.50
-0.25
0.00
0.25
0.50
GAIN ERROR (%)
GAIN ERROR (%)
Figure 41. Gain Error Distribution at VS = 3.3 V
LMP8601 and LMP8601-Q1
Figure 42. Gain Error Distribution at VS = 5 V
LMP8601 and LMP8601-Q1
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Typical Characteristics (continued)
at TA = 25°C, VS = 5 V, GND = 0 V, –22 ≤ VCM ≤ 60 V, RL = ∞, OFFSET (pin 7) connected to VS, and 10 nF between VS and
GND (unless otherwise noted)
20
25°C
15
25°C
125°C
15
PERCENTAGE (%)
PERCENTAGE (%)
20
125°C
10
-40°C
5
0
-40°C
10
5
0
-0.50
-0.25
0.00
0.25
0.50
-0.50
-0.25
Figure 43. Gain Error Distribution at VS = 3.3 V, 5000 Parts
LMP8602 and LMP8602-Q1
20
VS = 3.3V
VS = 3.3V
15
PERCENTAGE (%)
PERCENTAGE (%)
VS = 5V
10
5
0
15
10
5
0
-10 -8
-6
-4 -2 0 2 4
GAIN DRIFT (ppm/°C)
6
8
10
-10 -8
Figure 45. Gain Error Distribution at VS = 3.3 V, 5000 Parts
LMP8603 and LMP8603-Q1
-6
-4 -2 0 2 4
GAIN DRIFT (ppm/°C)
6
8
10
Figure 46. Gain Error Distribution at VS = 5 V
LMP8603 and LMP8603-Q1
30
30
25°C
-40°C
VS = 3.3V
VS = 5V
6000 parts
6000 parts
25
125°C
PERCENTAGE (%)
25
PERCENTAGE (%)
0.50
Figure 44. Gain Error Distribution at VS = 5 V, 5000 Parts
LMP8602 and LMP8602-Q1
VS = 5V
20
15
10
5
-40°C
20
25°C
15
125°C
10
5
0
0
80
90
100
110
120
CMRR (dB)
130
140
Figure 47. CMRR Distribution at VS = 3.3 V
16
0.25
GAIN ERROR (%)
GAIN ERROR (%)
20
0.00
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80
90
100
110
120
CMRR (dB)
130
140
Figure 48. CMRR Distribution at VS = 5 V
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Typical Characteristics (continued)
at TA = 25°C, VS = 5 V, GND = 0 V, –22 ≤ VCM ≤ 60 V, RL = ∞, OFFSET (pin 7) connected to VS, and 10 nF between VS and
GND (unless otherwise noted)
5
60
VS = 5V, VCM = 0V
VS = 5V, VCM = 0V
50
4
VOUT (mV)
VOUT (V)
40
3
2
30
20
1
10
0
0
50
100
150
200
0
-2.5
250
-1.5
VIN (mV)
-0.5
0.5
1.5
2.5
VIN (mV)
C001
Figure 49. Output Voltage vs VIN
C003
Figure 50. Output Voltage vs VIN (Enlarged Close to 0 V)
5
60
VS = 3.3V, VCM = 0V
VS = 3.3V, VCM = 0V
50
4
VOUT (mV)
VOUT (V)
40
3
2
30
20
1
10
0
0
50
100
150
200
250
VIN (mV)
0
-2.5
-1.5
-0.5
0.5
C002
Figure 51. Output Voltage vs VIN
Copyright © 2008–2016, Texas Instruments Incorporated
1.5
2.5
VIN (mV)
C004
Figure 52. Output Voltage vs VIN (Enlarged Close to 0 V)
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7 Detailed Description
7.1 Overview
The LMP860x and LMP860x-Q1 are fixed gain differential voltage precision amplifiers, with a –22-V to +60-V
input common-mode voltage range when operating from a single 5-V supply, or a –4-V to +27-V input commonmode voltage range when operating from a single 3.3-V supply. The LMP8601 and LMP8601-Q1 have a gain of
20x, the LMP8602 and LMP8602-Q1 have a gain of 50x, and the LMP8603 and LMP8603-Q1 have a gain of
100x.
The LMP860x and LMP860x-Q1 are members of the LMP family and are ideal parts for unidirectional and
bidirectional current sensing applications. Because of the proprietary chopping level-shift input stage, the
LMP860x and LMP860x-Q1 achieve very low offset, very low thermal offset drift, and very high CMRR. The
LMP860x and LMP860x-Q1 amplify and filter small differential signals in the presence of high common-mode
voltages.
The LMP860x and LMP860x-Q1 use level shift resistors at the inputs. Because of these resistors, the LMP860x
and LMP860x-Q1 can easily withstand very large differential input voltages that may exist in fault conditions
where some other less protected high-performance current sense amplifiers might sustain permanent damage.
7.1.1 Theory of Operation
The schematic shown in the Functional Block Diagram gives a basic representation of the internal operation of
the LMP860x and LMP860x-Q1.
The signal on the input pins is typically a small differential voltage developed across a current sensing shunt
resistor. The input signal may also appear at a high common-mode voltage. The input signals are accessed
through two input resistors that change the voltage into a current. The proprietary chopping level-shift current
circuit pulls or pushes current through the input resistors to bring the common-mode voltage behind these
resistors within the supply rails.
Subsequently, the signal is gained up by a factor of 10 and brought out on the A1 pin through a trimmed 100-kΩ
resistor. In the application, additional gain adjustment or filtering components can be added between the A1 and
A2 pins as explained in subsequent sections. The signal on the A2 pin is further amplified by a factor of 2
(LMP8601 and LMP8601-Q1), 5 (LMP8602, LMP8602-Q1), or 10 (LMP8603, LMP8603-Q1), and brought out on
the OUT pin.
7.2 Functional Block Diagram
OFFSET
VS
7
6
+IN
Level shift
8
+
Preamplifier
Gain = 10
-IN
1
Output Buffer
Gain = K2
5
OUT
-
100 k:
2
GND
3
4
A1 A2
NOTE: K2 = 2 for LMP8601, LMP8601-Q1; 5 for LMP8602, LMP8602-Q1; or 10 for LMP8603, LMP8603-Q1.
18
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7.3 Feature Description
7.3.1 Offset Input Pin
The OFFSET pin allows the output signal to be level-shifted to enable bidirectional current sensing. The output
signal is bidirectional and mid-rail referenced when the offset pin is connected to the positive supply rail. With the
offset pin connected to ground, the output signal is unidirectional and ground-referenced.
The signal on the A1 and OUT pins is ground-referenced when the offset pin is connected to ground. This means
that the output signal can only represent positive values of the current through the shunt resistor, so only
currents flowing in one direction can be measured.
When the offset pin is tied to the positive supply rail, the signal on the A1 and OUT pins is referenced to a midrail voltage which allows bidirectional current sensing. The operation of the amplifier will be fully bidirectional and
symmetrical around 0 V differential at the input pins. The signal at the output will follow this voltage difference
multiplied by the gain and at an offset voltage at the output of half VS.
When the offset pin is connected to an external voltage source, the output signal will be level shifted to that
voltage divided by two. In principle, the output signal can be shifted to any voltage between 0 and VS / 2 by
applying twice that voltage to the OFFSET pin.
NOTE
The OFFSET pin must be driven from a very low-impedance source (< 10 Ω). This low
source impedance is required because the OFFSET pin internally connects directly to the
resistive feedback networks of the two gain stages. When the OFFSET pin is driven from
a relatively large impedance (for example, a resistive divider between the supply rails),
accuracy decreases.
Examples:
• LMP8601, LMP8601-Q1: A 5-V supply, a gain of 20x, OFFSET pin tied to VS, and a differential input signal of
10 mV results in 2.7 V at the output pin. Similarly, –10 mV at the input results in 2.3 V at the output pin.
• LMP8602, LMP8602-Q1: A 5-V supply, a gain of 50x, and a differential input signal of 10 mV results in 3.0 V
at the output pin. Similarly, –10 mV at the input results in 2.0 V at the output pin.
• LMP8603, LMP8603-Q1: A 5-V supply, a gain of 100x, and a differential input signal of 10 mV results in 3.5 V
at the output pin. Similarly, –10 mV at the input results in 1.5 V at the output pin. (1) (1)
(1)
The OFFSET pin must be driven from a very low-impedance source (< 10 Ω) because the OFFSET pin internally connects directly to the
resistive feedback networks of the two gain stages. When the OFFSET pin is driven from a relatively large impedance (for example, a
resistive divider between the supply rails), accuracy decreases.
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Feature Description (continued)
7.3.2 Additional Second-Order Low-Pass Filter
The LMP86x1 and LMP86x1-Q1 have a third-order Butterworth lowpass characteristic with a typical bandwidth of
60 kHz integrated in the preamplifier stage. The bandwidth of the output buffer can be reduced by adding a
capacitor on the A1 pin to create a first-order low-pass filter with a time constant determined by the 100-kΩ
internal resistor and the external filter capacitor.
It is also possible to create an additional second-order, Sallen-Key, low-pass filter by adding external
components R2, C1 and C2. Together with the internal 100-kΩ resistor R1 as illustrated in Figure 53, this circuit
creates a second-order, low-pass filter characteristic.
OFFSET
7
+IN
8
-IN 1
+
Level
shift
Output Buffer
Gain = K2
Preamplifier
Gain = K1
-
5
OUT
Internal
R1
100 k:
3
4
A1
A2
R2
C1
C2
NOTE: K1 = 10; K2 = 2 for LMP8601, LMP8601-Q1; 5 for LMP8602, LMP8602-Q1; or 10 for LMP8603, LMP8603-Q1.
Figure 53. Second-Order Low-Pass Filter
When the corner frequency of the additional filter is much lower than 60 kHz, the transfer function of the
described amplifier can be written as:
K1 * K2
H(s) =
2
s +s*
1
R1R2C1C2
(1 - K2)
1
1
1
+
+
+
R 1C2 R 2C2
R2C1
R1R2C1C2
where
•
K1 equals the gain of the preamplifier and K2 that of the buffer amplifier.
(1)
Equation 1 can be written in the normalized frequency response for a second-order lowpass filter:
G(jZ) = K1 *
K2
2
jZ
(jZ)
+1
2 +
QZo
Zo
(2)
The cutoff frequency ωo in rad/sec (divide by 2π to get the cut-off frequency in Hz) is given by:
Zo =
1
R 1 R 2C 1 C 2
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(3)
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Feature Description (continued)
and the quality factor of the filter is given by:
Q=
R 1R2C1 C2
R1C1 + R2C1 + (1 - K2) * R1C2
(4)
With K2 = 2x, Equation 4 transforms results in:
R 1 R 2 C 1C 2
Q=
R 1C 1 + R 2 C 1 - R1 C 2
(5)
For any filter gain K > 1x, the design procedure can be very simple if the two capacitors are chosen to in a
certain ratio.
C2 =
C1
K2
1
(6)
Inserting this in Equation 4 for Q results in:
R 1R 2
Q=
C1
K2
2
1
(K2
R 1C1 + R 2C 1
1)R1C1
K2
1
(7)
Which results in:
2
R 1R2
Q=
C1
K2 1
C1R2
R1R 2
=
K2
1
R2
(8)
In this case, given the predetermined value of R1 = 100 kΩ (the internal resistor), the quality factor is set solely
by the value of the resistor R2.
R2 can be calculated based on the desired value of Q as the first step of the design procedure with the following
equation:
R2 =
R1
(K - 1) Q2
(9)
For the gain of 2 for the LMP8601 and LMP8601-Q1, the result is:
R2 =
R1
2
Q
(10)
For the gain of 5 for the LMP8602 and LMP8602-Q1, the result is:
R2 =
R1
4Q2
(11)
For the gain of 10 for the LMP8603 and LMP8603-Q1, the result is:
R2 =
R1
2
9Q
(12)
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Feature Description (continued)
For instance, the value of Q can be set to 0.5√2 to create a Butterworth response, to 1/√3 to create a Bessel
response, or a 0.5 to create a critically damped response. After the value of R2 has been found, the second and
last step of the design procedure is to calculate the required value of C to give the desired low-pass cut-off
frequency using:
C1 =
1)Q
(K2
R1Z0
(13)
For the gain = 2, the result is:
Q
R1Zo
C=
(14)
The gain = 5 results in:
C1 =
4Q
R1Z0
(15)
The gain = 10 gives:
C1 =
9Q
R1Z0
(16)
For C2 the value is calculated with:
C2 =
C1
K2
1
(17)
For a gain = 2:
C2 = C1
(18)
Or for a gain = 5:
C2 =
C1
4
(19)
And for a gain = 10:
C2 =
C1
9
(20)
Note that the frequency response achieved using this procedure is only accurate if the cut-off frequency of the
second-order filter is much smaller than the intrinsic 60-kHz, low-pass filter. In other words, choose the frequency
response of the LMP860x or LMP860x-Q1 circuit so that the internal poles do not affect the external secondorder filter.
7.4 Device Functional Modes
7.4.1 Gain Adjustment
The gain of the LMP860x and LMP860x-Q1 is fixed; however, the overall gain may be adjusted as the signal
path between the two internal amplifiers is available on the A1 and A2 pins.
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Device Functional Modes (continued)
7.4.1.1 Reducing Gain
Figure 54 shows the configuration that can be used to reduce the gain of the LMP8601 and LMP8601-Q1.
OFFSET
7
+IN 8
1
+
Level
shift
-IN
Output Buffer
Gain = K2
Preamplifier
Gain = 10
-
5
OUT
Internal
Resistor
100 k:
3
4
A2
A1
Rr
NOTE: K2 = 2 for LMP8601, LMP8601-Q1; 5 for LMP8602, LMP8602-Q1; or 10 for LMP8603, LMP8603-Q1.
Figure 54. Reduce Gain
Rr creates a resistive divider together with the internal 100-kΩ resistor such that the reduced gain Gr becomes:
Gr =
20 Rr
Rr + 100 k:
(21)
For the LMP8602 and LMP8602-Q1:
Gr =
50 Rr
Rr + 100 k:
(22)
And for the LMP8603 and LMP8603-Q1:
Gr =
100 Rr
Rr + 100 k:
(23)
Given a desired value of the reduced gain Gr, using this equation, the LMP8601 and LMP8601-Q1 required value
for the Rr is calculated with:
Rr = 100 k: X
Gr
20 - Gr
(24)
For the LMP8602 and LMP8602-Q1:
Rr = 100 k: X
Gr
50 - Gr
(25)
And for the LMP8603 and LMP8603-Q1:
Rr = 100 k: x
Gr
100 - Gr
(26)
7.4.1.2 Increasing Gain
Figure 55 shows the configuration that can be used to increase the gain of the LMP8601 and LMP8601-Q1.
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Device Functional Modes (continued)
OFFSET
7
+IN 8
1
+
Level
shift
-IN
Output Buffer
Gain = K2
Preamplifier
Gain = 10
-
5
OUT
Internal
Resistor
100 k:
3
A1
4
A2
Ri
NOTE: K2 = 2 for LMP8601, LMP8601-Q1; 5 for LMP8602, LMP8602-Q1; or 10 for LMP8603, LMP8603-Q1.
Figure 55. Increase Gain
Ri creates positive feedback from the output pin to the input of the buffer amplifier. The positive feedback
increases the gain. The increased gain Gi for the LMP8601 and LMP8601-Q1 becomes:
20 Ri
Gi =
Ri - 100 k:
(27)
For the LMP8602 and LMP8602-Q1:
Gi =
50 Ri
Ri - 400 k:
(28)
And for the LMP8603 and LMP8603-Q1:
Gi =
100 Ri
Ri - 900 k:
(29)
From this equation, for a desired value of the gain, the LMP8601 and LMP8601-Q1 required value of Ri is
calculated with:
Gi
Ri = 100 k: X
Gi - 20
(30)
For the LMP8602 and LMP8602-Q1:
Gi
Gi - 50
Ri = 400 k: X
(31)
And for the LMP8603 with:
Ri = 900 k: x
Gi
Gi - 100
(32)
Note that from the equation for the gain Gi, for large gains, Ri approaches 100 kΩ. In this case, the denominator
in the equation becomes close to zero. In practice, for large gains, the denominator is determined by tolerances
in the value of the external resistor Ri and the internal 100-kΩ resistor. In this case, the gain becomes very
inaccurate. If the denominator becomes equal to zero, the system becomes unstable. TI recommends to limit the
application of this technique to gain values of 50 or smaller.
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Device Functional Modes (continued)
7.4.2 Driving Switched Capacitive Loads
Some ADCs load their signal source with a sample and hold capacitor. The capacitor may be discharged prior to
being connected to the signal source. If the LMP860x and LMP860x-Q1 are driving such ADCs, the sudden
current that should be delivered when the sampling occurs may disturb the output signal. This effect was
simulated with the circuit shown in Figure 56 where the output is to a capacitor that is driven by a rail-to-rail
square wave.
VS
LMP8601/
LMP8601Q
0V
Figure 56. Driving Switched Capacitive Load
This circuit simulates the switched connection of a discharged capacitor to the LMP860x and LMP860x-Q1
output. The resulting VOUT disturbance signals are shown in Figure 57 and Figure 58.
0.4
0.5
VS = 5V
VS = 3.3V
0.4
0.2
0.3
0
10 pF
0.1
VOUT (V)
VOUT (V)
0.2
0
-0.1
-0.2
-0.4
10 pF
-0.2
-0.6
20 pF
20 pF
-0.3
-0.8
-0.4
-0.5
-1.0
0
50
100
150
200
250
300
0
50
100
150
200
250
300
TIME (ns)
TIME (ns)
Figure 57. Capacitive Load Response at 3.3 V
Figure 58. Capacitive Load Response at 5.0 V
These figures can be used to estimate the disturbance that will be caused when driving a switched capacitive
load. To minimize the error signal introduced by the sampling that occurs on the ADC input, place an additional
RC filter between the LMP860x or LMP860x-Q1 and the ADC, as illustrated in Figure 59.
Output Buffer
ADC
Figure 59. Reduce Error When Driving ADCs
The external capacitor absorbs the charge that flows when the ADC sampling capacitor is connected. The
external capacitor should be much larger than the sample-and-hold capacitor at the input of the ADC, and the
RC time constant of the external filter should be such that the speed of the system is not affected.
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8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
8.1.1 Specifying Performance
To specify the high performance of the LMP860x and LMP860x-Q1, all minimum and maximum values shown in
the parameter tables of this data sheet are 100% tested, and all over temperature limits are also 100% tested
over temperature.
8.2 Typical Applications
8.2.1 High-Side, Current-Sensing Application
Figure 60 illustrates the application of the LMP860x and LMP860x-Q1 in a high-side sensing application. This
application is similar to the low-side sensing discussed below, except in this application the common-mode
voltage on the shunt drops below ground when the driver is switched off. Because the common-mode voltage
range of the LMP860x and LMP860x-Q1 extends below the negative rail, the LMP860x and LMP860x-Q1 are
also very well suited for this application.
POWER
SWITCH
OFFSET
7
INDUCTIVE
LOAD
+IN 8
+
+
24V
-
RSENSE
1
-IN
Level
shift
Output Buffer
Gain = K2
Preamplifier
Gain = 10
-
5
OUT
Internal
Resistor
100 k:
3
4
A2
A1
C1
NOTE: For this application example, K2 = 2.
Figure 60. High-Side, Current-Sensing Application
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Typical Applications (continued)
8.2.1.1 Design Requirements
Using the circuit in Figure 60, the requirement is to measure coil current up to 10 A and drive the ADC input to a
maximum of 3.3 V. The OFFSET pin is grounded, so zero current will result in a zero volt output.
8.2.1.2 Detailed Design Procedure
First, the value of RSENSE must be determined. RSENSE can be found by dividing the maximum desired output
swing by the gain to determine the maximum input voltage. In this example, the LMP8601 is used, with a gain of
20 V/V, as shown in Equation 33:
3.3 V
VOUTMAX
=
= 165 mV
VINMAX =
Gain
20 V/V
(33)
Knowing 165 mV must be generated, the ideal value of the sense resistor can be determined through simple
ohms law:
165 mV
VINMAX
=
= 16.5 PŸ
RSENSE =
10A
ILOADMAX
(34)
The ideal sense resistor value is 16.5 mΩ. The closest standard value is 15 mΩ, but this value may cause the
output to slightly overrange at 10 V. It is recommended to reduce the expected maximum output by a few percent
to allow for overloads and component tolerances. The next most popular values would be 10 mΩ, 15 mΩ, and 20
mΩ. 10 mΩ allows for a maximum output of 2 V at 10 A, but may be too low and not use the full output range. 20
mΩ provides more sensitivity, but limits the maximum current to 8.25 A. 15 mΩ is a good compromise at 11 A
maximum, and allows for some component tolerance variation.
If a suitable sense resistor value is not available, it is possible to adjust the gain as detailed in the Gain
Adjustment section.
The sense resistor does dissipates power, so the maximum wattage rating and appropriate power deratings must
be observed. In the example above, the sense resistor dissipates 0.165 V × 10 A = 1.65 W, so a sense resistor
of at least twice the maximum expected power should be used (greater than 4 W).
8.2.1.3 Application Curve
Below is the expected output value using a 15-mΩ sense resistor.
5.0
VS = 5V
Output Voltage (V)
4.0
3.0
VS = 3.3V
2.0
1.0
RSENSE = 15mŸ
0.0
0
2
4
6
8
10
12
Load Current (A)
14
16
18
20
C001
Figure 61. Expected Output Voltage vs Load Current Using 15-mΩ Sense Resistor
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Typical Applications (continued)
8.2.2 Low-Side, Current-Sensing Application
Figure 62 illustrates a low-side, current-sensing application with a low-side driver. The power transistor is pulse
width modulated to control the average current flowing through the inductive load which is connected to a
relatively high battery voltage. The current through the load is measured across a shunt resistor RSENSE in series
with the load. When the power transistor is on, current flows from the battery through the inductive load, the
shunt resistor and the power transistor to ground. In this case, the common-mode voltage on the shunt is close
to ground. When the power transistor is off, current flows through the inductive load, through the shunt resistor
and through the freewheeling diode. In this case the common-mode voltage on the shunt is at least one diode
voltage drop above the battery voltage. Therefore, in this application the common-mode voltage on the shunt is
varying between a large positive voltage and a relatively low voltage. Because the large common-mode voltage
range of the LMP860x and LMP860x-Q1 and because of the high ac common-mode rejection ratio, the LMP860x
and LMP860x-Q1 are very well suited for this application.
OFFSET
7
INDUCTIVE
LOAD
+IN 8
RSENSE
1
-IN
+
24V
+
Level
shift
Output Buffer
Gain = K2
Preamplifier
Gain = 10
-
OUT
-
Internal
Resistor
100 k:
3
POWER
SWITCH
5
A1
4
A2
C1
RSENSE = 0.01 Ω, K2 = 2, VOUT = 0.2 V/A
Figure 62. Low-Side Current-Sensing Application
For this application, the following example can be used for the calculation of the sense voltage (VSENSE):
When using a sense resistor, RSENSE, of 0.01 Ω and a current, ILOAD, of 1 A, the sense voltage at the input pins of
the LMP860x and LMP860x-Q1 is:
VSENSE = RSENSE × ILOAD = 0.01 Ω × 1 A = 0.01 V
(35)
With the gain of 20 for the LMP8601, the result is an output of 0.2 V. Or in other words, VOUT = 0.2 V/A. The
result is the same for the LMP8601-Q1.
For the LMP8602 and LMP8602-Q1 with a gain of 50, the output is 0.5 V/A.
For the LMP8603 and LMP8603-Q1 with a gain of 100, the output is 1 V/A.
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Typical Applications (continued)
8.2.3 Battery Current Monitor Application
This application example shows how the LMP860x and LMP860x-Q1 can be used to monitor the current flowing
in and out of a battery pack. The fact that the LMP860x and LMP860x-Q1 can measure small voltages at a high
offset voltage outside the parts own supply range makes this part a very good choice for such applications. If the
load current of the battery is higher then the charging current, the output voltage of the LMP860x and LMP860xQ1 will be above the half offset voltage for a net current flowing out of the battery. When the charging current is
higher then the load current the output will be below this half offset voltage.
ICharge
ILoad
LOAD
Charger
VS
OFFSET
ICharge - ILoad
7
+IN 8
RSENSE
1
-IN
+
Level
shift
Output Buffer
Gain = K2
Preamplifier
Gain = 10
-
5
OUT
Internal
Resistor
100 k:
+
3
4
-
A1
A2
C1
NOTE: K2 = 2 for LMP8601, LMP8601-Q1; 5 for LMP8602, LMP8602-Q1; or 10 for LMP8603, LMP8603-Q1.
Figure 63. Battery Current Monitor Application
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Typical Applications (continued)
8.2.4 Advanced Battery Charger Application
Figure 63 can be used to realize an advanced battery charger that has the capability to monitor the exact net
current that flows in and out the battery as show in Figure 64. The output signal of the LMP860x and LMP860xQ1 is digitized with the ADC and used as an input for the charge controller. The Charge controller can be used to
regulate the charger circuit to deliver exactly the current that is required by the load, avoiding overcharging a fully
loaded battery.
ILoad
LOAD
VS
ICharge - ILoad
OFFSET
7
+IN 8
ICharge
RSENSE
1
+
Level
shift
-
-IN
OUT
A/D
Internal
Resistor
100 k:
+
12V
5
Output Buffer
Gain = K2
Preamplifier
Gain = 10
-
3
4
A2
A1
C1
Charge
Controler
Charger
NOTE: K2 = 2 for LMP8601, LMP8601-Q1; 5 for LMP8602, LMP8602-Q1; or 10 for LMP8603, LMP8603-Q1.
Figure 64. Advanced Battery Charger Application
8.2.5 Current Loop Receiver Application
Many industrial applications use 4-mA to 20-mA transmitters to send an analog value of a sensor to a central
control room. The LMP860x and LMP860x-Q1 can be used as a current loop receiver as shown in Figure 65.
VS
OFFSET
7
+IN 8
4 mA to 20 mA
CURRENT LOOP
RSENSE
1
-IN
+
Level
shift
Output Buffer
Gain = K2
Preamplifier
Gain = 10
-
5
OUT
Internal
Resistor
100 k:
3
4
A2
A1
C1
NOTE: K2 = 2 for LMP8601, LMP8601-Q1; 5 for LMP8602, LMP8602-Q1; or 10 for LMP8603, LMP8603-Q1.
Figure 65. Current-Loop Receiver Application
30
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Copyright © 2008–2016, Texas Instruments Incorporated
Product Folder Links: LMP8601 LMP8601-Q1 LMP8602 LMP8602-Q1 LMP8603 LMP8603-Q1
LMP8601, LMP8601-Q1
LMP8602, LMP8602-Q1
LMP8603, LMP8603-Q1
www.ti.com
SNOSAR2H – SEPTEMBER 2008 – REVISED APRIL 2016
9 Power Supply Recommendations
In order to decouple the LMP860x and LMP860x-Q1 from AC noise on the power supply, place a 0.1-μF bypass
capacitor between the VS and GND pins. Place this capacitor as close as possible to the supply pins. In some
cases, an additional 10-μF bypass capacitor may further reduce the supply noise.
10 Layout
10.1 Layout Guidelines
The traces leading to and from the sense resistor can be significant error sources. With small value sense
resistors (< 100 mΩ), any trace resistance shared with the load current can cause significant errors.
The amplifier inputs should be directly connected to the sense resistor pads using Kelvin or 4-wire connection
techniques. The traces should be one continuous piece of copper from the sense resistor pad to the amplifier
input pin pad, and ideally on the same copper layer with minimal vias or connectors. This can be important
around the sense resistor if it is generating any significant heat gradients.
To minimize noise pickup and thermal errors, the input traces should be treated as a differential signal pair and
routed tightly together with a direct path to the input pins. The input traces should be run away from noise
sources, such as digital lines, switching supplies or motor drive lines. Remember that these traces can contain
high voltage, and should have the appropriate trace routing clearances.
Since the sense traces only carry the amplifier bias current, the connecting input traces can be thinner, signal
level traces. Excessive Resistance in the trace should also be avoided.
The paths of the traces should be identical, including connectors and vias, so that any errors will be equal and
cancel.
The sense resistor will heat up as the load increases. As the resistor heats up, the resistance generally goes up,
which will cause a change in the readings. The sense resistor should have as much heatsinking as possible to
remove this heat through the use of heatsinks or large copper areas coupled to the resistor pads. A reading
drifting over time after turnon can usually be traced back to sense resistor heating.
10.2 Layout Example
Figure 66. Kelvin or 4–wire Connection to the Sense Resistor
Copyright © 2008–2016, Texas Instruments Incorporated
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Product Folder Links: LMP8601 LMP8601-Q1 LMP8602 LMP8602-Q1 LMP8603 LMP8603-Q1
31
LMP8601, LMP8601-Q1
LMP8602, LMP8602-Q1
LMP8603, LMP8603-Q1
SNOSAR2H – SEPTEMBER 2008 – REVISED APRIL 2016
www.ti.com
11 Device and Documentation Support
11.1 Device Support
11.1.1 Development Support
LMP8601 TINA SPICE Model, SNOM084
TINA-TI SPICE-Based Analog Simulation Program, http://www.ti.com/tool/tina-ti
11.2 Related Links
Table 1 lists quick access links. Categories include technical documents, support and community resources,
tools and software, and quick access to sample or buy.
Table 1. Related Links
PARTS
PRODUCT FOLDER
SAMPLE & BUY
TECHNICAL
DOCUMENTS
TOOLS &
SOFTWARE
SUPPORT &
COMMUNITY
LMP8601
Click here
Click here
Click here
Click here
Click here
LMP8601-Q1
Click here
Click here
Click here
Click here
Click here
LMP8602
Click here
Click here
Click here
Click here
Click here
LMP8602-Q1
Click here
Click here
Click here
Click here
Click here
LMP8603
Click here
Click here
Click here
Click here
Click here
LMP8603-Q1
Click here
Click here
Click here
Click here
Click here
11.3 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
11.4 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
11.5 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
11.6 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
32
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Copyright © 2008–2016, Texas Instruments Incorporated
Product Folder Links: LMP8601 LMP8601-Q1 LMP8602 LMP8602-Q1 LMP8603 LMP8603-Q1
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
LMP8601EDRQ1
ACTIVE
SOIC
D
8
2500
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 150
LMP86
01EDQ1
LMP8601MA/NOPB
ACTIVE
SOIC
D
8
95
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
LMP86
01MA
LMP8601MAX/NOPB
ACTIVE
SOIC
D
8
2500
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
LMP86
01MA
LMP8601QMA/NOPB
ACTIVE
SOIC
D
8
95
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
LMP86
01QMA
LMP8601QMAX/NOPB
ACTIVE
SOIC
D
8
2500
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
LMP86
01QMA
LMP8602MA/NOPB
ACTIVE
SOIC
D
8
95
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
LMP86
02MA
LMP8602MAX/NOPB
ACTIVE
SOIC
D
8
2500
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
LMP86
02MA
LMP8602MM/NOPB
ACTIVE
VSSOP
DGK
8
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
AN3A
LMP8602MME/NOPB
ACTIVE
VSSOP
DGK
8
250
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
AN3A
LMP8602MMX/NOPB
ACTIVE
VSSOP
DGK
8
3500
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
AN3A
LMP8602QMA/NOPB
ACTIVE
SOIC
D
8
95
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
LMP86
02QMA
LMP8602QMAX/NOPB
ACTIVE
SOIC
D
8
2500
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
LMP86
02QMA
LMP8602QMM/NOPB
ACTIVE
VSSOP
DGK
8
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
AF7A
LMP8602QMME/NOPB
ACTIVE
VSSOP
DGK
8
250
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
AF7A
LMP8602QMMX/NOPB
ACTIVE
VSSOP
DGK
8
3500
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
AF7A
LMP8603MA/NOPB
ACTIVE
SOIC
D
8
95
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
LMP86
03MA
LMP8603MAX/NOPB
ACTIVE
SOIC
D
8
2500
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
LMP86
03MA
LMP8603MM/NOPB
ACTIVE
VSSOP
DGK
8
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
AP3A
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
Orderable Device
10-Dec-2020
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
LMP8603MME/NOPB
ACTIVE
VSSOP
DGK
8
250
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
AP3A
LMP8603MMX/NOPB
ACTIVE
VSSOP
DGK
8
3500
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
AP3A
LMP8603QMA/NOPB
ACTIVE
SOIC
D
8
95
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
LMP86
03QMA
LMP8603QMAX/NOPB
ACTIVE
SOIC
D
8
2500
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
LMP86
03QMA
LMP8603QMM/NOPB
ACTIVE
VSSOP
DGK
8
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
AH7A
LMP8603QMME/NOPB
ACTIVE
VSSOP
DGK
8
250
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
AH7A
LMP8603QMMX/NOPB
ACTIVE
VSSOP
DGK
8
3500
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
AH7A
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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