LMV227
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LMV227 Production RF Tested, RF Power Detector for CDMA and WCDMA
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FEATURES
DESCRIPTION
•
•
•
•
The LMV227 is a 30 dB RF power detector intended
for use in CDMA and WCDMA applications. The
device has an RF frequency range from 450 MHz to
2 GHz. It provides an accurate temperature and
supply compensated output voltage that relates
linearly to the RF input power in dBm. The circuit
operates with a single supply from 2.7V to 5V. The
LMV227 has an integrated filter for low-ripple average
power detection of CDMA signals with 30 dB dynamic
range. Additional filtering can be applied using a
single external capacitor.
1
2
•
30 dB Linear in dB Power Detection Range
Output Voltage Range 0.2 to 2V
Logic Low Shutdown
Multi-band Operation from 450 MHz to 2000
MHz
Accurate Temperature Compensation
APPLICATIONS
•
•
•
•
CDMA RF Power Control
WCDMA RF Power Control
CDMA2000 RF Power Control
PA Modules
The LMV227 has an RF power detection range from 30 dBm to 0 dBm and is ideally suited for direct use
in combination with resistive taps. The device is
active for Enable = HI, otherwise it goes into a low
power consumption shutdown mode. During
shutdown the output will be LOW. The output voltage
ranges from 0.2V to 2V and can be scaled down to
meet ADC input range requirements. The output
signal bandwidth can optionally be lowered externally
as well.
TYPICAL APPLICATION
RF
ANTENNA
PA
R1
1.8 k:
C
100 pF
RFIN/EN
VDD
LMV227
OUT
ENABLE
R2
10 k:
GND
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2004–2013, Texas Instruments Incorporated
LMV227
SNWS016D – NOVEMBER 2004 – REVISED MARCH 2013
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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ABSOLUTE MAXIMUM RATINGS
Supply Voltage
ESD Tolerance
(1) (2)
VDD - GND
(3)
6.0V Max
Human Body Model
2000V
Machine Model
200V
−65°C to 150°C
Storage Temperature Range
Junction Temperature
(4)
150°C Max
Mounting Temperature
(1)
(2)
(3)
(4)
Infrared or convection (20 sec)
235°C
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not ensured. For ensured specifications and the test
conditions, see the Electrical Characteristics.
If Military/Aerospace specified devices are required, please contact the TI Sales Office/ Distributors for availability and specifications.
Human body model: 1.5 kΩ in series with 100 pF. Machine model, 0Ω in series with 100 pF.
The maximum power dissipation is a function of TJ(MAX) , θJA and TA. The maximum allowable power dissipation at any ambient
temperature is PD = (TJ(MAX) - TA)/θJA. All numbers apply for packages soldered directly into a PC board
OPERATING RATINGS
(1)
Supply Voltage
2.7V to 5.5V
−40°C to +85°C
Temperature Range
(1)
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not ensured. For ensured specifications and the test
conditions, see the Electrical Characteristics.
2.7 DC AND AC ELECTRICAL CHARACTERISTICS
Unless otherwise specified, all limits are specified to VDD = 2.7V; TJ = 25°C. Boldface limits apply at temperature extremes.
Symbol
IDD
Parameter
Condition
Supply Current
VLOW
EN Logic Low Input Level
(2)
VHIGH
EN Logic High Input Level
(2)
ton
Turn-on- Time
tr
Rise Time
IEN
Current into RFIN/EN Pin
PIN
Input Power Range
(3)
Logarithmic Slope
Typ
Max
Units
Active mode: RFIN/EN = VDD (DC), No RF
Input Power Present.
Min
4.9
7
8
mA
Shutdown: RFIN/EN = GND (DC), No RF
Input Power Present.
0.6
4.5
μA
0.8
V
1.8
(5)
2.1
Step from No Power to 0 dBm Applied
4.5
900 MHz
1855 MHz
(2)
(3)
(4)
(5)
2
μs
μs
1
μA
-30
0
dBm
-43
-13
dBV
43.3
1800 MHz
(1)
V
No RF Input Power Present
(4)
(1)
43.9
36
43.5
1900 MHz
44.0
2000 MHz
43.2
51
mV/dB
Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the device such that TJ = TA. No ensured specification of parametric performance is indicated in the electrical
tables under conditions of internal self-heating where TJ > TA.
All limits are specified by design or statistical analysis
Typical values represent the most likely parametric norm.
Power in dBV = dBm −13 when the impedance is 50Ω.
Device is set in active mode with a 10 kΩ resistor from VDD to RFIN/EN. RF signal is applied using a 50Ω RF signal generator AC
coupled to the RFIN/EN pin using a 100 pF coupling capacitor.
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2.7 DC AND AC ELECTRICAL CHARACTERISTICS (continued)
Unless otherwise specified, all limits are specified to VDD = 2.7V; TJ = 25°C. Boldface limits apply at temperature extremes. (1)
Symbol
Parameter
Logarithmic Intercept
Condition
(5)
Min
Typ
Max
Units
−33
dBm
−46.7
900 MHz
−44.1
1800 MHz
−56
1855 MHz
−44.3
1900 MHz
−42.8
2000 MHz
−43.7
VOUT
Output Voltage
No RF Input Power Present
208
350
mV
ROUT
Output Impedance
No RF Input Power Present
20.3
29
34
kΩ
en
Output Referred Noise
RF Input = 1800 MHz, −10 dBm,
Measured at 10 kHz
700
Variation over Temperature
900 MHz, RFIN = 0 dBm Referred to 25°C
+0.64
−1.07
1800 MHz, RFIN = 0 dBm Referred to
25°C
+0.09
−0.86
1900 MHz, RFIN = 0 dBm Referred to
25°C
+0
−0.69
2000 MHz, RFIN = 0 dBm Referred to
25°C
+0
−0.86
nV/√Hz
dB
5.0 DC AND AC ELECTRICAL CHARACTERISTICS
Unless otherwise specified, all limits are specified to VDD = 5.0V; TJ = 25°C. Boldface limits apply at temperature extremes.
Symbol
IDD
Parameter
Condition
Supply Current
EN Logic Low Input Level
(2)
VHIGH
EN Logic High Input Level
(2)
ton
Turn-on- Time
tr
Rise Time
VLOW
IEN
PIN,
(3)
Input Power Range
Max
Units
5.3
7
9
mA
Shutdown: RFIN/EN = GND (DC), No RF
Input Power Present.
0.49
4.5
μA
0.8
V
1.8
V
No RF Input Power Present
2.1
μs
Step from No Power to 0 dBm Applied
4.5
μs
(5)
VOUT
(5)
Output Voltage
μA
1
(4)
Logarithmic Intercept
(2)
(3)
(4)
(5)
Min
Current Into RFIN/EN Pin
MIN
Logarithmic Slope
(1)
Typ
Active Mode: RFIN/EN = VDD (DC), No RF
Input Power Present.
(1)
-30
0
dBm
-43
-13
dBV
900 MHz
43.6
1800 MHz
44.5
1900 MHz
44.5
2000 MHz
43.7
900 MHz
-48.1
1800 MHz
-45.6
1900 MHz
-44.2
2000 MHz
-45.6
No RF Input Power Present
211
mV/dB
dBm
400
mV
Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the device such that TJ = TA. No ensured specification of parametric performance is indicated in the electrical
tables under conditions of internal self-heating where TJ > TA.
All limits are specified by design or statistical analysis
Typical values represent the most likely parametric norm.
Power in dBV = dBm −13 when the impedance is 50Ω.
Device is set in active mode with a 10 kΩ resistor from VDD to RFIN/EN. RF signal is applied using a 50Ω RF signal generator AC
coupled to the RFIN/EN pin using a 100 pF coupling capacitor.
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5.0 DC AND AC ELECTRICAL CHARACTERISTICS (continued)
Unless otherwise specified, all limits are specified to VDD = 5.0V; TJ = 25°C. Boldface limits apply at temperature extremes. (1)
Symbol
Parameter
Condition
Min
Typ
Max
Units
29
31
kΩ
ROUT
Output Impedance
No RF Input Power Present
23.4
en
Output Referred Noise
RF Input = 1800 MHz, −10 dBm,
Measured at 10 kHz
700
Variation over Temperature
900 MHz, RFIN = 0 dBm Referred to 25°C
+0.89
−1.16
1800 MHz, RFIN = 0 dBm Referred to
25°C
+0.3
−0.82
1900 MHz, RFIN = 0 dBm Referred to
25°C
+0.34
−0.63
2000 MHz RFIN = 0 dBm Referred to 25°C
+0.22
−0.75
nV/√Hz
dB
CONNECTION DIAGRAM
GND
6 OUT
1
NC 2
5 NC
RFIN/EN 3
4
VDD
Figure 1. 6-pin WSON
Top View
PIN DESCRIPTIONS
Pin
Power Supply
Output
4
Name
Description
4
VDD
Positive supply voltage
1
GND
Power ground
3
RFIN/EN
6
OUT
DC voltage determines enable state of the device (HIGH = device active). AC
voltage is the RF input signal to the detector (beyond 450 MHz). The RFIN/EN
pin is internally terminated with 50Ω in series with 45 pF.
Ground referenced detector output voltage (linear in dBm)
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BLOCK DIAGRAM
VDD
LOGIC
ENABLE
DETECTOR
I/I
OUT
RFIN/EN
10 dB
10 dB
10 dB
GND
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TYPICAL PERFORMANCE CHARACTERISTICS
Unless otherwise specified, VDD = 2.7V, TJ = 25°C.
Supply Current
vs.
Supply Voltage
Output Voltage
vs.
RF Input Power
2.50
8
2.25
900MHz
2.00
85°C
7
1800MHz
1.75
2000MHz
6.5
6
VOUT (V)
25°C
5.5
1.50
1900MHz
1.25
1.00
0.75
5
0.50
-40°C
4.5
0.25
3
3.5
4
4.5
0.00
-50
5
-40
-30
-20
-10
0
Figure 3.
Output Voltage and Log Conformance
vs.
RF Input Power @ 900 MHz
Output Voltage and Log Conformance
vs.
RF Input Power @ 1800 MHz
2.50
5
5
85°C
2.25
85°C
85°C
25°C
2.00
4
2.25
3
2.00
2
1.75
1.25
0
-40°C
1.00
-1
0.75
0.50
VOUT (V)
1
1.50
ERROR (dB)
VOUT (V)
-40°C
4
25°C
85°C
3
25°C
1.75
25°C
2
1.50
-40°C
1
1.25
0
-40°C
1.00
-1
-2
0.75
-2
-3
0.50
-3
0.25
-4
0.25
-4
0.00
-50
-5
0.00
-50
-5
-40
-30
-20
-10
0
10
20
-40
RF INPUT POWER (dBm)
-30
-20
-10
0
10
20
RF INPUT POWER (dBm)
Figure 4.
Figure 5.
Output Voltage and Log Conformance
vs.
RF Input Power @ 1900 MHz
Output Voltage and Log Conformance
vs.
RF Input Power @ 2000 MHz
2.50
5
2.50
4
2.25
3
2.00
2
1.75
5
85°C
2.25
85°C
25°C
85°C
2.00
4
85°C
1
0
-1
-40°C
VOUT (V)
-40°C
1.25
ERROR (dB)
1.50
1.00
25°C
3
25°C
25°C
1.75
VOUT (V)
20
Figure 2.
2.50
2
1.50
-40°C
1
1.25
1.00
0
-1
-40°C
0.75
-2
0.75
-2
0.50
-3
0.50
-3
0.25
-4
0.25
-4
-5
0.00
-50
0.00
-50
-40
-30
-20
-10
0
10
20
RF INPUT POWER (dBm)
-5
-40
-30
-20
-10
0
10
20
RF INPUT POWER (dBm)
Figure 6.
6
10
RF INPUT POWER (dBm)
SUPPLY VOLTAGE (V)
ERROR (dB)
4
2.5
ERROR (dB)
SUPPLY CURRENT (mA)
7.5
Figure 7.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Unless otherwise specified, VDD = 2.7V, TJ = 25°C.
Logarithmic Slope
vs.
Frequency
Logarithmic Intercept
vs.
Frequency
47
-43
46
-40°C
-44
44
INTERCEPT (dBm)
SLOPE (mV/dB)
45
25°C
43
42
41
85°C
40
-40°C
-45
25°C
-46
-47
39
38
85°C
37
400
800
1200
1600
-48
400
2000
800
1200
1600
2000
FREQUENCY (MHz)
FREQUENCY (MHz)
Figure 8.
Figure 9.
Output Variation
vs.
RF Input Power Normalized to 25°C @ 900 MHz
Output Variation
vs.
RF Input Power Normalized to 25°C @ 1800 MHz
1.5
1.5
85°C
1.0
85°C
0.5
ERROR (dB)
ERROR (dB)
1.0
0.0
-0.5
0.5
0.0
-0.5
-40°C
-1.0
-1.0
-40°C
-1.5
-1.5
-50
-40
-30
-20
-10
0
10
-50
20
-40
-30
-20
-10
0
10
20
RF INPUT POWER (dBm)
RF INPUT POWER (dBm)
Figure 10.
Figure 11.
Output Variation
vs.
RF Input Power Normalized to 25°C @ 1900 MHz
Output Variation
vs.
RF Input Power Normalized to 25°C @ 2000 MHz
1.5
1.5
85°C
1.0
1.0
0.5
0.5
ERROR (dB)
ERROR (dB)
85°C
0.0
-0.5
-1.0
0.0
-0.5
-1.0
-40°C
-40°C
-1.5
-1.5
-50
-40
-30
-20
-10
0
10
20
RF INPUT POWER (dBm)
-50
-40
-30
-20
-10
0
10
20
RF INPUT POWER (dBm)
Figure 12.
Figure 13.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Unless otherwise specified, VDD = 2.7V, TJ = 25°C.
8
PSRR
vs.
Frequency
RF Input Impedance
vs.
Frequency @ Resistance and Reactance
Figure 14.
Figure 15.
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APPLICATION NOTES
CONFIGURING A TYPICAL APPLICATION
The LMV227 is a power detector intended for CDMA and WCDMA applications. Power measured on its input
translates to a DC voltage on the output through a linear-in-dB response. The detector is especially suited for
power measurements via a high-resistive tap, which eliminates the need for a directional coupler. In order to
match the dynamic output range of the power amplifier (PA) with the dynamic range of the LMV227's input, the
high resistive tap needs to be configured correctly.
Input Attenuation
The constant input impedance of the device enables the realization of a frequency independent input attenuation
to adjust the LMV227's dynamic range to the dynamic range of the PA. Resistor R1 and the 50Ω input resistance
of the device realize this attenuation (Figure 16). To minimize insertion loss, resistor R1 needs to be sufficiently
large. The following example demonstrates how to determine the proper value for R1.
Suppose the useful output power of the PA ranges up to +31 dBm and the LMV227 can handle input power
levels up to 0 dBm. Hence, R1 should realize a minimum attenuation of 31 - 0 = 31 dB. The attenuation realized
by R1 and the effective input resistance RIN of the detector equals:
AdB = 20·LOG 1 +
R1
= 31dB
RIN
(1)
Solving this expression for R1, using that RIN = 50Ω, yields:
AdB
31
20
20
-1 · RIN = 10
-1 · 50 = 1724:
R1 = 10
(2)
In Figure 16, R1 is set to 1800Ω resulting in an attenuation of 31.4 dB
DC and AC Behavior of the RFIN/EN Pin
The LMV227 RFIN/EN pin has 2 functions combined:
• Shutdown functionality
• Power detection
The capacitor C and the resistor R2 of Figure 16 separate the DC shutdown functionality from the AC power
measurement. The device is active when Enable = HI, otherwise it goes into a low power consumption shutdown
mode. During shutdown the output will be LOW.
Capacitor C should be chosen sufficiently large to ensure a corner frequency far below the lowest input
frequency to be measured. The corner frequency can be calculated using:
1
f=
C · CIN
2 S (R1 + RIN)
C + CIN
(3)
Where RIN = 50Ω, CIN = 45 pF typical.
With R1 = 1800Ω and C is 100 pF, this results in a corner frequency of 2.8 MHz
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RF
ANTENNA
PA
R1
1.8 k:
C
100 pF
VDD
RFIN/EN
LMV227
RIN
CIN
OUT
R2
ENABLE
10 k:
GND
Figure 16. Typical Application
The output voltage is linear with the logarithm of the input power, often called "linear-in-dB". Figure 17 shows the
typical output voltage versus PA output power of the LMV227 setup as depicted in Figure 16.
LMV227 OUTPUT VOLTAGE (V)
2.5
2.0
1.5
1.0
0.5
0.0
-5
0
5
10
15
20
25
30
PA OUTPUT POWER (dBm)
Figure 17. Typical Power Detector Response, VOUT vs. PA Output Power
OUTPUT RIPPLE DUE TO AM MODULATION
A CDMA modulated carrier wave generally contains some amplitude modulation that might disturb the RF power
measurement used for controlling the PA. This section explains the relation between amplitude modulation in the
RF signal and the ripple on the output of the LMV227. Expressions are provided to estimate this ripple on the
output. The ripple can be further reduced by connecting an additional capacitor to the output of the LMV227 to
ground.
Estimating Output Ripple
The CDMA modulated RF input signal of Figure 18 can be described as:
VIN(t) = VIN [1 + μ(t)] cos (2 · π · f · t)
(4)
In which the amplitude modulation μ(t) can be between −1 and 1.
10
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VIN (1 + P
VIN
VIN (1 - P
0
Figure 18. AM Modulated RF Signal
The ripple observed on the output of the detector equals the detectors response to variation on the input due to
AM modulation (Figure 18). This signal has a maximum amplitude VIN(1+μ) and a minimum amplitude VIN(1−μ),
where 1+μ can be maximum 2 and 1−μ can be minimum 0. The ripple can be described with the formula:
2
2
VIN (1 + P)2
VRIPPLE = VY
10 LOG
2RIN
VIN (1 - P)2
+30 -VY
+30
10 LOG
2RIN
PINMIN IN dBm
PINMAX IN dBm
(5)
where VY is the slope of the detection curve (Figure 19) and µ is the modulation index. Equation 5 can be
reduced to:
VRIPPLE = VY · 20 LOG
1+P
1-P
(6)
Consequently, the ripple is independent of the average input power of the RF input signal and only depends on
the logarithmic slope VY and the ratio of the maximum and the minimum input signal amplitude.
For CDMA, the ratio of the maximum and the minimum input signal amplitude modulation is typically in the order
of 5 to 6 dB, which is equivalent to a modulation index µ of 0.28 to 0.33.
A further understanding of the equation above can be achieved via the knowledge that the output voltage VOUT of
the LMV227 is linear in dB, or proportional to the input power PIN in dBm. As discussed earlier, CDMA contains
amplitude modulation in the order of 5 to 6 dB. Since the transfer is linear in dB, the output voltage VOUT will vary
linearly over about 5 to 6 dB in the curve (Figure 19).
VOUT (V)
200mV
SLOPE = VY
5dB
PZ
PIN (dBm)
Figure 19. VOUT vs. RF Input Power PIN
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Besides the ripple due to AM modulation, the log- conformance error contributes to a variation in VOUT. For
details see the typical performance characteristics curves. The output voltage variation ΔVOUT thus is always the
same for RF input signals which fall within the linear range (in dB) of the detector plus the log-conformance error:
ΔVO = VY · ΔPIN + Log Conformance Error
(7)
In which VY is the slope of the curve. The log-conformance error is usually much smaller than the ripple due to
AM modulation. In case of the LMV227, VY = 40 mV/dB. With ΔPIN = 5 dB for CDMA, the ΔVO = 200 mVPP. This
is valid for all VOUT.
Output Ripple With Additional Filtering
The calculated result above is for an unfiltered configuration. When a low pass filter is used by shunting a
capacitor of e.g. COUT = 1.5 nF at the output of the LMV227 to ground, this ripple is further attenuated. The cutoff frequency follows from:
fC =
1
2 S COUT RO
(8)
With the output resistance of the LMV227 RO = 19.8 kΩ typical and COUT = 1.5 nF, the cut-off frequency equals
fC = 5.36 kHz. A 100 kHz AM signal then gets attenuated by 5.36/100 or 25.4 dB. The remaining ripple will be
less than 20 mV. With a slope of 40 mV/dB this translates into an error of less than 0.5 dB.
Output Ripple Measurement
Figure 20 shows the ripple reduction that can be achieved by adding additional capacitance on the output of the
LMV227. The RF signal of 900 MHz is AM modulated with a 100 kHz sinewave and a modulation index of 0.3.
The RF input power is swept while the modulation index remains unchanged. Without additional capacitance the
ripple is about 200 mVPP. Connecting a capacitor of 1.5 nF at the output to ground, results in a ripple of 12 mVPP.
The attenuation with a 1.5 nF capacitor is then 20 · log (200/12) = 24.4 dB. This is very close to the number
calculated in the previous paragraph.
1000
OUTPUT RIPPLE (mVPP)
NO ADDITIONAL CAPACITOR
100
10
COUT = 1.5nF
1
-50
-40
-30
-20
-10
0
10
RF INPUT POWER (dBm)
Figure 20. Output Ripple vs. RF Input Power
PRINCIPLE OF OPERATION
The logarithmic response of the LMV227 is implemented by a de-modulating logarithmic amplifier as shown in
Figure 21. The logarithmic amplifier consists of a number of cascaded linear gain cells. With these gain cells, a
piecewise approximation of the logarithmic function is constructed.
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+
+
+
+
Y
A/0
A/0
X0
A/0
X1
A/0
X2
X4
X3
Figure 21. Logarithmic Amplifier
Every gain cell has a response according to Figure 22. At a certain threshold (EK), the gain cell starts to saturate,
which means that the gain drops to zero. The output of gain cell 1 is connected to the input of gain cell 2 and so
on.
y
x0
xA
A/0
x
y
x
EK
Figure 22. Gain Cell
All gain cell outputs are AM-demodulated with a peak detector and summed together. This results in a
logarithmic function. The logarithmic range is about:
20 · n · log (A)
(9)
where,
n = number of gain cells
A = gain per gaincell
Figure 23 shows a logarithmic function on a linear scale and the piecewise approximation of the logarithmic
function.
Y
Y = LOG (X)
3
EK/A
EK/A
EK/A
1
X (LIN)
EK
2
Figure 23. Log-Function on Lin Scale
Figure 24 shows a logarithmic function on a logarithmic scale and the piecewise approximation of the logarithmic
function.
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13
LMV227
SNWS016D – NOVEMBER 2004 – REVISED MARCH 2013
www.ti.com
Y
Y=X
Y = AX
2
Y=A X
3
Y=A X
EK/A3
EK/A2
EK/A1
EK
X (Log)
Figure 24. Log-Function on Log Scale
The maximum error for this approximation occurs at the geometric mean of a gain section, which is e.g. for the
third segment:
EK
A
2 ·
EK
A
1 =
EK
A A
(10)
The size of the error increases with distance between the thresholds.
LAYOUT CONSIDERATIONS
For a properly functioning part a good board layout is necessary. Special care should be taken for the series
resistance R1 (Figure 16) that determines the attenuation. This series resistance should have a sufficiently high
bandwidth. The bandwidth will drop when the parasitic capacitance of the resistance is too high, which will cause
a significant attenuation drop at the GSM frequencies and can cause non-linear behavior. To reduce the parasitic
capacitance across resistor R1, it can be composed of several resistor in series in stead of a single component.
14
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Product Folder Links: LMV227
LMV227
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SNWS016D – NOVEMBER 2004 – REVISED MARCH 2013
REVISION HISTORY
Changes from Revision C (March 2013) to Revision D
•
Page
Changed layout of National Data Sheet to TI format .......................................................................................................... 14
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15
PACKAGE OPTION ADDENDUM
www.ti.com
29-Aug-2015
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
LMV227SD/NOPB
ACTIVE
WSON
NGF
6
TBD
Call TI
Call TI
A88
LMV227SDX/NOPB
ACTIVE
WSON
NGF
6
TBD
Call TI
Call TI
A88
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
29-Aug-2015
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
8-Apr-2013
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
LMV227SD/NOPB
WSON
NGF
6
1000
178.0
12.4
2.8
2.5
1.0
8.0
12.0
Q1
LMV227SDX/NOPB
WSON
NGF
6
4500
330.0
12.4
2.8
2.5
1.0
8.0
12.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
8-Apr-2013
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
LMV227SD/NOPB
WSON
NGF
6
1000
210.0
185.0
35.0
LMV227SDX/NOPB
WSON
NGF
6
4500
367.0
367.0
35.0
Pack Materials-Page 2
MECHANICAL DATA
NGF0006A
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