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LMV341-N, LMV342-N, LMV344-N
SNOS990H – APRIL 2002 – REVISED JUNE 2016
LMV34x-N Single Rail-to-Rail Output CMOS Operation Amplifier With Shutdown
1 Features
3 Description
•
The LMV34x-N devices are single, dual, and quad
low-voltage, low-power operational amplifiers. They
are designed specifically for low-voltage portable
applications. Other important product characteristics
are low input bias current, rail-to-rail output, and wide
temperature range.
1
•
•
•
•
•
•
•
•
Typical 2.7 V Supply Values (Unless Otherwise
Noted)
Ensured 2.7 V and 5 V Specifications
Input Referred Voltage Noise at 10 kHz:
29 nV/√Hz
Supply Current (Per Amplifier): 100 µA
Gain Bandwidth Product: 1 MHz
Slew Rate: 1 V/µs
Shutdown Current (LMV341-N): 45 pA
Turnon Time From Shutdown (LMV341-N): 5 µs
Input Bias Current: 20 fA
2 Applications
•
•
•
•
•
•
•
•
•
•
Cordless or Cellular Phones
Laptops
PDAs
PCMCIA or Audio
Portable or Battery-Powered Electronic Equipment
Supply Current Monitoring
Battery Monitoring
Buffers
Filters
Drivers
Sample and Hold Circuit
V
+
V
+
-
VIN
+
+
VOUT
The patented class AB turnaround stage significantly
reduces the noise at higher frequencies, power
consumption, and offset voltage. The PMOS input
stage provides the user with ultra-low input bias
current of 20 fA (typical) and high input impedance.
The industrial-plus temperature range of −40°C to
125°C allows the LMV34x-N to accommodate a
broad range of extended environment applications.
LMV341-N expands Texas Instrument's Silicon Dust
amplifier portfolio offering enhancements in size,
speed, and power savings. The LMV34x-N devices
are specified to operate over the voltage range of
2.7 V to 5.5 V and all have rail-to-rail output.
The LMV341-N offers a shutdown pin that can be
used to disable the device. Once in shutdown mode,
the supply current is reduced to 45 pA (typical). The
LMV34x-N devices have 29-nV voltage noise at 10
KHz, 1 MHz GBW, 1-V/µs slew rate, 0.25 mVos, and
0.1-µA shutdown current (LMV341-N).
The LMV341-N is offered in the tiny 6-pin SC70
package, the LMV342-N in space-saving 8-pin
VSSOP and SOIC packages, and the LMV344-N in
14-pin TSSOP and SOIC packages. These small
package amplifiers offer an ideal solution for
applications requiring minimum PCB footprint.
Applications with area constrained PCB requirements
include portable electronics such as cellular handsets
and PDAs.
Device Information(1)
C = 200pF
SAMPLE
CLOCK
PART NUMBER
LMV341-N
Copyright © 2016, Texas Instruments Incorporated
LMV342-N
LMV344-N
PACKAGE
BODY SIZE (NOM)
SC70 (6)
2.00 mm × 1.25 mm
VSSOP (8)
3.00 mm × 3.00 mm
SOIC (8)
4.90 mm × 3.91 mm
TSSOP (14)
5.00 mm × 4.40 mm
SOIC (14)
8.64 mm × 3.91 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
LMV341-N, LMV342-N, LMV344-N
SNOS990H – APRIL 2002 – REVISED JUNE 2016
www.ti.com
Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
5
6.1
6.2
6.3
6.4
6.5
6.6
6.7
6.8
6.9
5
5
5
5
6
7
7
8
9
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics – 2.7 V (DC) .....................
Electrical Characteristics – 2.7 V (AC)......................
Electrical Characteristics – 5 V (DC) ........................
Electrical Characteristics – 5 V (AC).........................
Typical Characteristics ..............................................
Detailed Description ............................................ 16
7.1 Overview ................................................................. 16
7.2 Functional Block Diagram ....................................... 16
7.3 Feature Description................................................. 16
7.4 Device Functional Modes........................................ 16
8
Application and Implementation ........................ 18
8.1 Application Information............................................ 18
8.2 Typical Application .................................................. 18
9 Power Supply Recommendations...................... 19
10 Layout................................................................... 20
10.1 Layout Guidelines ................................................. 20
10.2 Layout Example .................................................... 20
11 Device and Documentation Support ................. 21
11.1
11.2
11.3
11.4
11.5
11.6
11.7
11.8
Device Support......................................................
Documentation Support ........................................
Related Links ........................................................
Receiving Notification of Documentation Updates
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
21
21
21
21
21
21
21
22
12 Mechanical, Packaging, and Orderable
Information ........................................................... 22
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision G (March 2013) to Revision H
Page
•
Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section .................................................................................................. 1
•
Changed Thermal Information table ....................................................................................................................................... 5
Changes from Revision F (March 2012) to Revision G
•
2
Page
Changed layout of National Data Sheet to TI format ............................................................................................................. 1
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Copyright © 2002–2016, Texas Instruments Incorporated
Product Folder Links: LMV341-N LMV342-N LMV344-N
LMV341-N, LMV342-N, LMV344-N
www.ti.com
SNOS990H – APRIL 2002 – REVISED JUNE 2016
5 Pin Configuration and Functions
DCK Package
6-Pin SC70
Top View
1
6
+IN
V
2
+
+
GND
5
SHDN
4
OUT
-
-IN
3
Pin Functions – LMV341-N
PIN
NAME
NO.
+IN
1
–IN
GND
TYPE (1)
DESCRIPTION
I
Noninverting input
3
I
Inverting input
2
P
Negative supply input
OUT
4
O
Output
+
V
6
P
Positive supply input
SHDN
5
I
Active low enable input
(1)
I = Input, O = Output, and P = Power
DGK or D Package
8-Pin VSSOP or SOIC
Top View
Pin Functions – LMV342-N
PIN
TYPE (1)
DESCRIPTION
NAME
NO.
IN A+
3
I
Noninverting input, channel A
–
IN A
2
I
Inverting input, channel A
IN B+
5
I
Noninverting input, channel B
IN B–
6
I
Inverting input, channel B
OUT A
1
O
Output, channel A
OUT B
7
O
Output, channel B
V+
8
P
Positive (highest) power supply
V–
4
P
Negative (lowest) power supply
(1)
I = Input, O = Output, and P = Power
Copyright © 2002–2016, Texas Instruments Incorporated
Product Folder Links: LMV341-N LMV342-N LMV344-N
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LMV341-N, LMV342-N, LMV344-N
SNOS990H – APRIL 2002 – REVISED JUNE 2016
www.ti.com
PW or D Package
14-Pin TSSOP or SOIC
Top View
Pin Functions – LMV344-N
PIN
TYPE (1)
DESCRIPTION
NAME
NO.
IN A+
3
I
Noninverting input, channel A
IN A–
2
I
Inverting input, channel A
IN B+
5
I
Noninverting input, channel B
IN B–
6
I
Inverting input, channel B
IN C
10
I
Noninverting input, channel C
IN C–
9
I
Inverting input, channel C
IN D+
12
I
Noninverting input, channel D
–
IN D
13
I
Inverting input, channel D
OUT A
1
O
Output, channel A
OUT B
7
O
Output, channel B
OUT C
8
O
Output, channel C
OUT D
14
O
Output, channel D
V+
4
P
Positive (highest) power supply
V–
11
P
Negative (lowest) power supply
+
(1)
4
I = Input, O = Output, and P = Power
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Product Folder Links: LMV341-N LMV342-N LMV344-N
LMV341-N, LMV342-N, LMV344-N
www.ti.com
SNOS990H – APRIL 2002 – REVISED JUNE 2016
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1) (2)
MIN
Differential input voltage
MAX
Supply voltage (V + – V –)
6
Output short circuit to V +
See (3)
Output short circuit to V –
See (4)
Lead temperature
235
Wave soldering (10 s)
260
Storage temperature, Tstg
(2)
(3)
(4)
(5)
V
Infrared or convection reflow (20 s)
Junction temperature, TJ (5)
(1)
UNIT
±Supply voltage
–65
°C
150
°C
150
°C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and
specifications.
Shorting output to V+ will adversely affect reliability.
Shorting output to V- will adversely affect reliability.
The maximum power dissipation is a function of TJ(MAX), RθJA. The maximum allowable power dissipation at any ambient temperature is
PD = (TJ(MAX) – TA) / RθJA. All numbers apply for packages soldered directly onto a PCB.
6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human-body model (HBM) (1)
±2000
Machine model (MM) (2)
±200
UNIT
V
Human Body Model, applicable std. MIL-STD-883, Method 3015.7.
Machine Model, applicable std. JESD22-A115-A (ESD MM std. of JEDEC) Field-Induced Charge-Device Model, applicable std. JESD22C101-C (ESD FICDM std. of JEDEC).
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
Supply voltage
2.7
5.5
UNIT
V
Temperature
–40
125
°C
6.4 Thermal Information
LMV341-N
THERMAL METRIC (1)
LMV342-N
LMV344-N
DCK
(SC70)
D
(SOIC)
DGK
(VSSOP)
D
(SOIC)
PW
(TSSOP)
6 PINS
8 PINS
8 PINS
14 PINS
14 PINS
414
190
235
145
155
°C/W
UNIT
RθJA
Junction-to-ambient thermal resistance
RθJC(top)
Junction-to-case (top) thermal resistance
116.1
65.2
68.4
45.9
50.5
°C/W
RθJB
Junction-to-board thermal resistance
53.3
61.4
98.8
44.1
66.2
°C/W
ψJT
Junction-to-top characterization
parameter
8.8
16.1
9.8
10.2
6.3
°C/W
ψJB
Junction-to-board characterization
parameter
52.7
60.8
97.3
43.7
65.6
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal
resistance
—
—
—
—
—
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
Copyright © 2002–2016, Texas Instruments Incorporated
Product Folder Links: LMV341-N LMV342-N LMV344-N
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LMV341-N, LMV342-N, LMV344-N
SNOS990H – APRIL 2002 – REVISED JUNE 2016
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6.5 Electrical Characteristics – 2.7 V (DC)
TJ = 25°C, V+ = 2.7 V, V– = 0 V, VCM = V+/ 2, VO = V+/ 2, and RL > 1 MΩ (unless otherwise noted) (1)
PARAMETER
TEST CONDITIONS
LMV341-N
VOS
Input offset voltage
LMV342-N and
LMV344-N
TCVOS
Input offset voltage
average drift
IB
Input bias current
IOS
Input offset current
Supply current
0.25
−40°C ≤ TJ ≤ 125°C
TJ = 25°C
0.55
−40°C ≤ TJ ≤ 125°C
0.02
TJ = 25°C
100
−40°C ≤ TJ ≤ 125°C
TJ = 25°C
56
−40°C ≤ TJ ≤ 125°C
50
TJ = 25°C
65
−40°C ≤ TJ ≤ 125°C
60
2.7 V ≤ V+ ≤ 5 V
VCM
Input common-mode voltage
For CMRR ≥ 50 dB
RL = 10 kΩ to 1.35 V
Large signal voltage gain
RL = 2 kΩ to 1.35 V
4.5 × 10
−40°C ≤ TJ ≤ 125°C
Output swing
V+
Turnon time from shutdown
VSD
(1)
(2)
(3)
6
Shutdown pin voltage
120
pA
fA
170
1
80
µA
dB
82
1.9
0
−0.2
TJ = 25°C
78
113
–40°C ≤ TJ ≤ 125°C
70
TJ = 25°C
72
–40°C ≤ TJ ≤ 125°C
64
V–
dB
1.7
24
V
dB
103
–40°C ≤ TJ ≤ 125°C
60
95
TJ = 25°C
60
–40°C ≤ TJ ≤ 125°C
95
TJ = 25°C
RL = 10 kΩ to 1.35 V
ton
µV/°C
1.5
TJ = 25°C
RL = 2 kΩ to 1.35 V
mV
230
–5
TJ = 25°C
Power supply rejection ratio
Output short-circuit current
5
250
Shutdown mode,
VSD = 0 V,
LMV341-N
PSRR
IO
4
6.6
0 V ≤ VCM ≤ 1.7 V,
0 V ≤ VCM ≤ 1.6 V
UNIT
5.5
-40°C ≤ TJ ≤ 150°C
Common-mode rejection ratio
VO
MAX (2)
4.5
TJ = 25°C
CMRR
AV
TJ = 25°C
TYP (3)
1.7
Per amplifier
IS
MIN (2)
26
5
–40°C ≤ TJ ≤ 125°C
30
mV
40
TJ = 25°C
30
–40°C ≤ TJ ≤ 125°C
40
5.3
Sourcing, LMV341-N and LMV342-N
20
32
Sourcing, LMV344-N
18
24
Sinking
15
24
2.4
1.7
2.7
0
1
0.8
LMV341-N
mA
5
ON mode, LMV341-N
Shutdown mode, LMV341-N
µs
V
Electrical characteristic values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in
very limited self-heating of the device such that TJ = TA. No specification of parametric performance is indicated in the electrical tables
under conditions of internal self heating where TJ > TA.
All limits are specified by testing or statistical analysis.
Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and also depends on the application and configuration. The typical values are not tested and are not ensured on shipped
production material.
Submit Documentation Feedback
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Product Folder Links: LMV341-N LMV342-N LMV344-N
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www.ti.com
SNOS990H – APRIL 2002 – REVISED JUNE 2016
6.6 Electrical Characteristics – 2.7 V (AC)
TJ = 25°C, V+ = 2.7V, V− = 0V, VCM = V+/ 2, VO = V+/ 2, and RL > 1 MΩ (unless otherwise noted) (1)
PARAMETER
TEST CONDITIONS
MIN (2)
TYP (3)
(4)
MAX (2)
UNIT
SR
Slew rate
RL = 10 kΩ
GBW
Gain bandwidth product
RL = 100 kΩ, CL = 200 pF
Φm
Phase margin
RL = 100 kΩ
72
°
Gm
Gain margin
RL = 100 kΩ
20
dB
en
Input-referred voltage noise
f = 1 kHz
40
nV/√Hz
in
Input-referred current noise
f = 1 kHz
0.001
pA/√Hz
Total harmonic distortion
f = 1 kHz, AV = +1,
RL = 600 Ω, VIN = 1VPP
THD
(1)
(2)
(3)
(4)
1
V/µs
1
MHz
0.017%
Electrical characteristic values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in
very limited self-heating of the device such that TJ = TA. No specification of parametric performance is indicated in the electrical tables
under conditions of internal self heating where TJ > TA.
All limits are specified by testing or statistical analysis.
Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and also depends on the application and configuration. The typical values are not tested and are not ensured on shipped
production material.
Connected as voltage follower with 2-VPP step input. Number specified is the slower of the positive and negative slew rates.
6.7 Electrical Characteristics – 5 V (DC)
TJ = 25°C, V+ = 5 V, V− = 0 V, VCM = V+/ 2, VO = V+/ 2, and R L > 1 MΩ (unless otherwise noted) (1)
PARAMETER
TEST CONDITIONS
LMV341-N
VOS
Input offset voltage
LMV342-N and LMV344-N
TCVOS
Input offset voltage
average drift
IB
Input bias current
IOS
Input offset current
Supply current
UNIT
4.5
TJ = 25°C
0.7
–40°C ≤ TJ ≤ 125°C
mV
5
5.5
0.02
µV/°C
200
375
TJ = 25°C
107
–40°C ≤ TJ ≤ 125°C
TJ = 25°C
TJ = 25°C
56
–40°C ≤ TJ ≤ 125°C
50
TJ = 25°C
65
–40°C ≤ TJ ≤ 125°C
60
Power supply rejection ratio
2.7 V ≤ V+ ≤ 5 V
VCM
Input common-mode voltage
For CMRR ≥ 50 dB
RL = 10 kΩ to 2.5 V
Large signal voltage gain (4)
RL = 2 kΩ to 2.5 V
0.033
–40°C ≤ TJ ≤ 125°C
fA
200
1
µA
1.5
V+
86
dB
82
4.2
0
−0.2
TJ = 25°C
78
116
–40°C ≤ TJ ≤ 125°C
70
TJ = 25°C
72
–40°C ≤ TJ ≤ 125°C
64
V–
pA
260
Shutdown mode,
VSD = 0 V,
LMV341-N
PSRR
(4)
4
6.6
0 V ≤ VCM ≤ 4 V,
0 V ≤ VCM ≤ 3.9 V
(2)
(3)
0.025
–40°C ≤ TJ ≤ 125°C
Common-mode rejection
ratio
(1)
MAX (2)
–40°C ≤ TJ ≤ 125°C
TJ = 25°C
CMRR
AV
TJ = 25°C
TYP (3)
1.9
Per amplifier
IS
MIN (2)
dB
4
107
V
dB
Electrical characteristic values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in
very limited self-heating of the device such that TJ = TA. No specification of parametric performance is indicated in the electrical tables
under conditions of internal self heating where TJ > TA.
All limits are specified by testing or statistical analysis.
Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and also depends on the application and configuration. The typical values are not tested and are not ensured on shipped
production material.
RL is connected to mid-supply. The output voltage is GND + 0.2 V ≤ VO ≤ V+– 0.2 V
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Product Folder Links: LMV341-N LMV342-N LMV344-N
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Electrical Characteristics – 5 V (DC) (continued)
TJ = 25°C, V+ = 5 V, V− = 0 V, VCM = V+/ 2, VO = V+/ 2, and R L > 1 MΩ (unless otherwise noted)(1)
PARAMETER
TEST CONDITIONS
MIN (2)
TYP (3)
MAX (2)
32
60
TJ = 25°C
–40°C ≤ TJ ≤ 125°C
RL = 2 kΩ to 2.5 V
VO
Output swing
IO
Output short-circuit current
ton
Turnon time from shutdown
VSD
Shutdown pin voltage
95
TJ = 25°C
60
–40°C ≤ TJ ≤ 125°C
95
34
TJ = 25°C
7
–40°C ≤ TJ ≤ 125°C
RL = 10 kΩ to 2.5 V
UNIT
30
mV
40
TJ = 25°C
30
–40°C ≤ TJ ≤ 125°C
40
7
Sourcing
85
113
Sinking
50
75
4.5
3.1
5
0
1
0.8
LMV341-N
mA
5
ON mode, LMV341-N
Shutdown mode, LMV341-N
µs
V
6.8 Electrical Characteristics – 5 V (AC)
TJ = 25°C, V+ = 5 V, V− = 0 V, VCM = V+/ 2, VO = V+/ 2 and R L > 1 MΩ (unless otherwise noted) (1)
PARAMETER
CONDITIONS
MIN (2)
TYP (3)
MAX (2)
UNIT
(4)
1
V/µs
1
MHz
deg
SR
Slew rate
RL = 10 kΩ
GBW
Gain-bandwidth product
RL = 10 kΩ, CL = 200 pF
Φm
Phase margin
RL = 100 kΩ
70
Gm
Gain margin
RL = 100 kΩ
20
dB
en
Input-referred voltage noise
f = 1 kHz
39
nV/√Hz
in
Input-referred current noise
f = 1 kHz
0.001
pA/√Hz
Total harmonic distortion
f = 1 kHz, AV = +1,
RL = 600 Ω, VIN = 1VPP
THD
(1)
(2)
(3)
(4)
8
0.012%
Electrical characteristic values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in
very limited self-heating of the device such that TJ = TA. No specification of parametric performance is indicated in the electrical tables
under conditions of internal self heating where TJ > TA.
All limits are specified by testing or statistical analysis.
Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and also depends on the application and configuration. The typical values are not tested and are not ensured on shipped
production material.
Connected as voltage follower with 2-VPP step input. Number specified is the slower of the positive and negative slew rates.
Submit Documentation Feedback
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SNOS990H – APRIL 2002 – REVISED JUNE 2016
6.9 Typical Characteristics
1000
150
VS = 5 V
140
130
125°C
INPUT CURRENT (pA)
SUPPLY CURRENT (PA)
100
85°C
120
110
100
90
80
25°C
10
1
.1
70
.01
-40°C
60
.001
-40 -20
50
2.5
3
3.5
4.5
4
SUPPLY VOLTAGE (V)
5
7.0
34
RL = 10k:
RL = 2k:
6.5
OUTPUT VOLTAGE FROM
SUPPLY VOLTAGE (mV)
OUTPUT VOLTAGE FROM
SUPPLY VOLTAGE (mV)
32
30
NEGATIVE SWING
26
24
POSITIVE SWING
22
20
2.5
6.0
POSITIVE SWING
5.5
5.0
4.5
NEGATIVE SWING
4.0
3.5
3.0
3
3.5
4
4.5
SUPPLY VOLTAGE (V)
2.5
5
Figure 3. Output Voltage Swing vs Supply Voltage
100
VS = 2.7 V
-40°C
3.5
3
5
4.5
4
SUPPLY VOLTAGE (V)
Figure 4. Output Voltage Swing vs Supply Voltage
100
25°C
VS = 5V
10
10
125°C
1
85°C
0.1
ISOURCE (mA)
ISOURCE (mA)
20 40 60 80 100 120 140
TEMPERATURE (C°)
Figure 2. Input Current vs Temperature
Figure 1. Supply Current vs Supply Voltage (LMV341-N)
28
0
-40°C
85°C
125°C
1
25°C
0.1
0.01
0.001
0.001
0.01
1
10
0.1
+
OUTPUT VOLTAGE REFERENCED TO V (V)
Figure 5. ISOURCE vs VOUT
0.01
0.001
0.01
0.1
10
1
+
OUTPUT VOLTAGE REFERENCED TO V (V)
Figure 6. ISOURCE vs VOUT
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Typical Characteristics (continued)
100
100
-40°C
VS = 5V
-40°C
VS = 2.7V
10
10
25°C
ISINK (mA)
25°C
ISINK (mA)
1
0.1
125°C
125°C
1
85°C
0.1
0.01
85°C
0.001
0.001
0.01
0.1
1
0.01
0.001
10
0.01
0.1
OUTPUT VOLTAGE REFERENCED TO V (V)
Figure 7. ISINK vs VOUT
Figure 8. ISINK vs VOUT
3
3
VS = 2.7V
VS = 5V
-40°C
2.5
-40°C
2.5
25°C
25°C
2
2
VOS (mV)
VOS (mV)
10
1
-
-
OUTPUT VOLTAGE REFERENCED TO V (V)
85°C
1.5
125°C
85°C
1.5
1
1
0.5
0.5
125°C
0
-0.2
0.3
0.8
1.3
1.8
0
-0.2
2.3
0.5
1
VCM (V)
1.5
2.5
2
3
3.5 4
4.5
VCM (V)
Figure 9. VOS vs VCM
Figure 10. VOS vs VCM
300
300
VS = ±1.35V
200
INPUT VOLTAGE (PV)
INPUT VOLTAGE (PV)
200
100
0
RL = 10 k:
-100
-200
RL = 10 k:
100
0
RL = 2 k:
-100
-200
VS = ±2.5V
RL = 2 k:
-300
-1.5
10
-300
-1
-0.5
0
0.5
1
1.5
-3
-2
-1
0
1
OUTPUT VOLTAGE (V)
OUTPUT VOLTAGE (V)
Figure 11. VIN vs VOUT
Figure 12. VIN vs VOUT
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3
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Typical Characteristics (continued)
100
80
VIN = VS/2
VS = 5V
70
RL = 5 k:
VS = 5 V, -PSRR
90
RL = 5kΩ
80
VS = 2.7 V, +PSRR
60
50
PSRR (dB)
CMRR (dB)
70
VS = 2.7V
40
30
60
50
VS = 5 V, +PSRR
40
30
20
20
10
10
0
100
VS = 2.7 V, -PSRR
0
10k
1k
100k
100
1M
1.5
VCM = VS/2
240
220
200
AV = +1
1.4
RL = 10k:
120
100
80
60
40
VS = 2.7V
SLEW RATE (V/Ps)
1.3
180
160
140
VIN = 2VPP
1.2
1.1
RISING EDGE
1
0.9
FALLING EDGE
0.8
0.7
20
0
0.6
VS = 5V
0.5
10
1k
100
FREQUENCY (Hz)
10k
2.5
Figure 15. Input Voltage Noise vs Frequency
3
3.5
4
4.5
SUPPLY VOLTAGE (V)
1.2
RISING EDGE
RISING EDGE
1
0.8
FALLING EDGE
0.6
AV = +1
SLEW RATE (V/Ps)
1
SLEW RATE (V/Ps)
5
Figure 16. Slew Rate vs VSUPPLY
1.2
0.8
FALLING EDGE
0.6
0.4
AV = +1
RL = 10k:
RL = 10k:
0.2
10M
Figure 14. PSRR vs Frequency
260
0.4
1M
FREQUENCY (Hz)
Figure 13. CMRR vs Frequency
INPUT VOLTAGE NOISE (nV/ Hz)
100k
10k
1k
FREQUENCY (Hz)
0.2
VIN = 2VPP
VIN = 2VPP
VS = 5V
VS = 2.7V
0
0
-40 -20
0
20 40
60
80 100 120 140
-40 -20
0
20 40
60
80 100 120 140
TEMPERATURE (°)
TEMPERATURE (°)
Figure 17. Slew Rate vs Temperature
Figure 18. Slew Rate vs Temperature
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Typical Characteristics (continued)
10
10
f = 10KHz
AV = +10
VS = 2.7V, VO = 1VPP
1
THD+N (%)
THD+N (%)
1
RL = 600Ω
VS = 2.7V, A V = +10
VS = 5V, VO = 2.5VPP
0.1
AV = +1
VS = 5V, AV = +10
0.1
0.01
VS = 5V, AV = +1
VS = 2.7V, AV = +1
VS = 5V, VO = 1VPP
VS = 2.7V, VO = 1VPP
0.01
0.00
1
0.001
10
1
10k
100
1k
FREQUENCY (Hz)
100k
0.0
1
0.1
Figure 19. THD+N vs Frequency
Figure 20. THD+N vs VOUT
100
100
100
100
RL = 2k:
125°C
PHASE
80
10
1
VO (VPP)
PHASE
80
80
80
RL = 600:
60
RL = 100k:
GAIN
20
20
-40°C
0
0
GAIN (dB)
40
40
PHASE
(°)
40
40
GAIN
RL = 100k: 20
20
0
-20
-20
-40
RL = 2k:
-40
VS = 2.7V
-60
10k
-40
-40
RL = 2k:
1k
-20
-20
25°C
VS = 5V
100k
1M
FREQUENCY (Hz)
-60
10M
-60
100
10k
1k
Figure 21. Open-Loop Frequency Over Temperature
60
100
100
80
80
CL = 0
80
CL = 1000pF
60
60
20
0
0
GAIN (dB)
RL = 100k:
PHASE
(°)
GAIN (dB)
40
40
20
20
0
0
CL = 1000pF
-20
-20
-20
RL = 2k:
-40
-40
-40
-60
100k
1M
FREQUENCY (Hz)
-60
10M
Figure 23. Open-Loop Frequency Response
-20
CL = 500pF
VS = 5V
CL = 100pF
RL = 600:
VS = 5V
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CL = 100pF
GAIN
RL = 600:
10k
60
CL = 500pF
40
20
10
0
PHASE
RL = 100k:
GAIN
-60
10M
Figure 22. Open-Loop Frequency Response
RL = 600:
12
100k
1M
FREQUENCY (Hz)
RL = 2k:
PHASE
80
1k
0
RL = 600:
125°C
PHASE
(°)
GAIN (dB)
60
60
25°C
-40°C
PHASE
(°)
60
-60
1k
10k
100k
1M
FREQUENCY (Hz)
-40
CL = 0
-60
10M
Figure 24. Gain and Phase vs CL
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Typical Characteristics (continued)
100
VS = ±2.5V
CL = 0
3.5
CL = 1000pF
60
CL = 500pF
CL = 100pF
40
40
GAIN
20
20
CL = 0
0
0
CL = 1000pF
CL = 500pF
-20
-20
CL = 100pF
VS = 5V
-40
PHASE
(°)
60
CAPACITIVE LOAD (nF)
80
80
GAIN (dB)
4
100
PHASE
10k
1k
VO = 100mVPP
2.5
2
1.5
1
0.5
-40
0
-2.5
-60
10M
100k
1M
FREQUENCY (Hz)
RL = 1M:
VO = 100mVPP
120
100
80
60
40
20
0
-2.5 -2
-1.5
-1
-0.5
0
0.5
1
1.5
0.5
1
1.5
RL = 2k:
VS = ±2.5V
TIME (4 Ps/div)
Figure 28. Noninverting Small Signal Pulse Response
TA = 25°C
RL = 2k:
OUTPUT SIGNAL
(1 V/div)
VS = ±2.5V
(50 mV/div)
INPUT SIGNAL
Figure 27. Stability vs Capacitive Load
INPUT SIGNAL
-0.5 0
VO (V)
TA = 25°C
VO (V)
OUTPUT SIGNAL
-1
(50 mV/div)
AV = +1
OUTPUT SIGNAL
CAPACITIVE LOAD (pF)
VS = ±2.5
140
-1.5
INPUT SIGNAL
200
160
-2
Figure 26. Stability vs Capacitive Load
Figure 25. Gain and Phase vs CL
180
RL = 2k:
3
RL = 100k:
-60
AV = +1
TA = 125°C
RL = 2k:
VS = ±2.5V
TIME (4 Ps/div)
Figure 29. Noninverting Large Signal Pulse Response
TIME (4 Ps/div)
Figure 30. Noninverting Small Signal Pulse Response
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INPUT SIGNAL
RL = 2k:
VS = ±2.5V
OUTPUT SIGNAL
(50 mV/div)
TA = 125°C
(1 V/div)
OUTPUT SIGNAL
INPUT SIGNAL
Typical Characteristics (continued)
TA = -40°C
RL = 2k:
VS = ±2.5V
TIME (4 Ps/div)
OUTPUT SIGNAL
INPUT SIGNAL
OUTPUT SIGNAL
(1 V/div)
OUTPUT SIGNAL
TIME (4 Ps/div)
Figure 34. Inverting Small Signal Pulse Response
INPUT SIGNAL
Figure 33. Noninverting Large Signal Pulse Response
TA = 25°C
RL = 2k:
VS = ±2.5V
TIME (4 Ps/div)
Figure 35. Inverting Large Signal Pulse Response
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VS = ±2.5V
(50 mV/div)
VS = ±2.5V
TA = 25°C
TA = 125°C
RL = 2kΩ
VS = ±2.5V
(50 mV/div)
RL = 2k:
TIME (4 Ps/div)
14
Figure 32. Noninverting Small Signal Pulse Response
INPUT SIGNAL
TA = -40°C
(1 V/div)
OUTPUT SIGNAL
INPUT SIGNAL
Figure 31. Noninverting Large Signal Pulse Response
TIME (4 Ps/div)
TIME (4 Ps/div)
Figure 36. Inverting Small Signal Pulse Response
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TA =
125°C
RL = 2k:
VS = ±2.5V
TIME (4 Ps/div)
VS = ±2.5V
TIME (4 Ps/div)
Figure 38. Inverting Small Signal Pulse Response
200
VS = ±2.5V
CROSSTALK REJECTION (dB)
180
(1 V/div)
OUTPUT SIGNAL
INPUT SIGNAL
Figure 37. Inverting Large Signal Pulse Response
TA = -40°C
RL = 2kΩ
(50 mV/div)
OUTPUT SIGNAL
(1 V/div)
OUTPUT SIGNAL
INPUT SIGNAL
INPUT SIGNAL
Typical Characteristics (continued)
TA = -40°C
RL = 2k:
160
140
120
100
80
60
40
20
VS = ±2.5V
0
100
TIME (4 Ps/div)
Figure 39. Inverting Large Signal Pulse Response
1k
10k
100k
FREQUENCY (Hz)
1M
Figure 40. Crosstalk Rejection vs Frequency
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7 Detailed Description
7.1 Overview
TI’s LMV34x-N family of amplifiers have 1-MHz bandwidth, 1-V/µs slew rate, a rail-to-rail output stage, and
consume only 100 µA of current per amplifier while active. When in shutdown mode it only consumes 45-pA
supply consumption with only 20 fA of input bias current. Lastly, these operational amplifiers provide an inputreferred voltage noise 29 nV√Hz (at 10 kHz).
7.2 Functional Block Diagram
VDD
OUT
CLASS AB CONTROL
InP
InM
VEE
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7.3 Feature Description
7.3.1 Class AB Turnaround Stage Amplifier
This patented folded cascode stage has a combined class AB amplifier stage, which replaces the conventional
folded cascode stage. Therefore, the class AB folded cascode stage runs at a much lower quiescent current
compared to conventional-folded cascode stages. This results in significantly smaller offset and noise
contributions. The reduced offset and noise contributions in turn reduce the offset voltage level and the voltage
noise level at the input of LMV34x-N. Also the lower quiescent current results in a high open-loop gain for the
amplifier. The lower quiescent current does not affect the slew rate of the amplifier nor its ability to handle the
total current swing coming from the input stage.
The input voltage noise of the device at low frequencies, below 1 kHz, is slightly higher than devices with a BJT
input stage; however, the PMOS input stage results in a much lower input bias current and the input voltage
noise drops at frequencies above 1 kHz.
7.4 Device Functional Modes
7.4.1 Shutdown Feature
The LMV341-N is capable of being turned off to conserve power and increase battery life in portable devices.
Once in shutdown mode the supply current is drastically reduced, 1-µA maximum, and the output is tri-stated.
The device is disabled when the shutdown pin voltage is pulled low. The shutdown pin must never be left
unconnected. Leaving the pin floating results in an undefined operation mode and the device may oscillate
between shutdown and active modes.
The LMV341-N typically turns on 2.8 µs after the shutdown voltage is pulled high. The device turns off in less
than 400 ns after shutdown voltage is pulled low. Figure 41 and Figure 42 show the turnon and turnoff time of the
LMV341-N, respectively. To reduce the effect of the capacitance added to the circuit by the scope probe, in the
turnoff time circuit a resistive load of 600 Ω is added. Figure 43 and Figure 44 show the test circuits used to
obtain the two plots.
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Device Functional Modes (continued)
VS = 5V
VOUT
VOUT
(1 V/div)
(1 V/div)
VSHDN
VSHDN
RL = 600:
VS = 5V
TIME (1 Ps/div)
TIME (400 ns/div)
Figure 41. Turnon Time Plot
Figure 42. Turnoff Time Plot
+
V
V
+
+
VOUT
VOUT
SHDN
SHDN
VIN = VS/2
+
VIN = VS/2
+
-
Figure 43. Turnon Time Circuit
+
-
RL = 600:
Figure 44. Turnoff Time Circuit
7.4.2 Low Input Bias Current
LMV34x-N amplifiers have a PMOS input stage. As a result, they have a much lower input bias current than
devices with BJT input stages. This feature makes these devices ideal for sensor circuits. A typical curve of the
input bias current of the LMV341-N is shown in Figure 45.
200
VS = 5V
TA = 25°C
INPUT BIAS (fA)
100
0
-100
-200
-0.5
0.5
1.5
2.5
3.5
4.5
5.5
VCM (V)
Figure 45. Input Bias Current vs VCM
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8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The LMV34x-N amplifier family features low voltage, low power, rail-to-rail output as well as a shutdown
capability, making it well suited for low voltage portable applications.
8.2 Typical Application
8.2.1 Sample and Hold Circuit
V
+
V
+
-
VIN
+
+
VOUT
C = 200pF
SAMPLE
CLOCK
Copyright © 2016, Texas Instruments Incorporated
Figure 46. Sample and Hold Circuit
8.2.1.1 Design Requirements
The lower input bias current of the LMV341-N results in a very high input impedance. The output impedance
when the device is in shutdown mode is quite high. These high impedances, along with the ability of the
shutdown pin to be derived from a separate power source, make LMV341-N a good choice for sample and hold
circuits. The sample clock must be connected to the shutdown pin of the amplifier to rapidly turn the device on or
off.
8.2.1.2 Detailed Design Procedure
Figure 46 shows the schematic of a simple sample and hold circuit. When the sample clock is high the first
amplifier is in normal operation mode and the second amplifier acts as a buffer. The capacitor, which appears as
a load on the first amplifier, is charging at this time. The voltage across the capacitor is that of the noninverting
input of the first amplifier because it is connected as a voltage-follower. When the sample clock is low the first
amplifier is shut off, bringing the output impedance to a high value. The high impedance of this output, along with
the very high impedance on the input of the second amplifier, prevents the capacitor from discharging. There is
very little voltage droop while the first amplifier is in shutdown mode. The second amplifier, which is still in normal
operation mode and is connected as a voltage follower, also provides the voltage sampled on the capacitor at its
output.
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Typical Application (continued)
Signal Amplitude
8.2.1.3 Application Curve
Sample (5v/div)
Vin (1v/div)
Vout (1v/div)
0
300
600
900
1200
Time (us)
1500
C002
Figure 47. Sample and Hold Circuit Results
9 Power Supply Recommendations
For proper operation, the power supplies must be properly decoupled. For decoupling the supply lines, TI
recommends that 10-nF capacitors be placed as close as possible to the op amp power supply pins. For singlesupply, place a capacitor between V+ and V− supply leads. For dual supplies, place one capacitor between V+
and ground, and one capacitor between V- and ground.
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10 Layout
10.1 Layout Guidelines
To properly bypass the power supply, several locations on a printed-circuit board need to be considered. A
6.8-µF or greater tantalum capacitor must be placed at the point where the power supply for the amplifier is
introduced onto the board. Another 0.1-µF ceramic capacitor must be placed as close as possible to the power
supply pin of the amplifier. If the amplifier is operated in a single power supply, only the V+ pin needs to be
bypassed with a 0.1-µF capacitor. If the amplifier is operated in a dual power supply, both V+ and V− pins need to
be bypassed.
It is good practice to use a ground plane on a printed-circuit board to provide all components with a low inductive
ground connection.
Surface-mount components in 0805 size or smaller are recommended in the LMV341-N application circuits.
Designers can take advantage of the VSSOP miniature sizes to condense board layout to save space and
reduce stray capacitance.
10.2 Layout Example
Cbyp
V+
GND
INPUT
Rin
SHDN
OUTPUT
Rf
Cf
Figure 48. PCB Layout Example
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SNOS990H – APRIL 2002 – REVISED JUNE 2016
11 Device and Documentation Support
11.1 Device Support
11.1.1 Development Support
For development support see the following:
• LMV341-N PSPICE Model (also applicable to the LMV342 and LMV344)
• TINA-TI SPICE-Based Analog Simulation Program
• DIP Adapter Evaluation Module
• TI Universal Operational Amplifier Evaluation Module
• TI Filterpro Software
11.2 Documentation Support
11.2.1 Related Documentation
For related documentation see the following:
AN-31 Op Amp Circuit Collection (SNLA140)
11.3 Related Links
The table below lists quick access links. Categories include technical documents, support and community
resources, tools and software, and quick access to sample or buy.
Table 1. Related Links
PARTS
PRODUCT FOLDER
SAMPLE & BUY
TECHNICAL
DOCUMENTS
TOOLS &
SOFTWARE
SUPPORT &
COMMUNITY
LMV341-N
Click here
Click here
Click here
Click here
Click here
LMV342-N
Click here
Click here
Click here
Click here
Click here
LMV344-N
Click here
Click here
Click here
Click here
Click here
11.4 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
11.5 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
11.6 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
11.7 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
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11.8 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
LMV341MG/NOPB
ACTIVE
SC70
DCK
6
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
A78
LMV341MGX/NOPB
ACTIVE
SC70
DCK
6
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
A78
LMV342MA/NOPB
ACTIVE
SOIC
D
8
95
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
LMV34
2MA
LMV342MAX/NOPB
ACTIVE
SOIC
D
8
2500
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
LMV34
2MA
LMV342MM/NOPB
ACTIVE
VSSOP
DGK
8
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
A82A
LMV342MMX/NOPB
ACTIVE
VSSOP
DGK
8
3500
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
A82A
LMV344MA/NOPB
ACTIVE
SOIC
D
14
55
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
LMV344MA
LMV344MAX/NOPB
ACTIVE
SOIC
D
14
2500
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
LMV344MA
LMV344MT/NOPB
ACTIVE
TSSOP
PW
14
94
RoHS & Green
NIPDAU | SN
Level-1-260C-UNLIM
-40 to 125
LMV34
4MT
LMV344MTX/NOPB
ACTIVE
TSSOP
PW
14
2500
RoHS & Green
NIPDAU | SN
Level-1-260C-UNLIM
-40 to 125
LMV34
4MT
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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