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Design
LMV611, LMV612, LMV614
SNOSC69D – APRIL 2012 – REVISED MARCH 2017
LMV61x Single, Dual, and Quad, 1.4-MHz, Low-Power,
General-Purpose 1.8-V Operational Amplifiers
1 Features
3 Description
•
•
•
The LMV61x devices are single, dual, and quad lowvoltage, low-power operational amplifiers (op amps).
They are designed specifically for low-voltage,
general-purpose applications. Other important
product characteristics are, rail-to-rail input or output,
low supply voltage of 1.8 V and wide temperature
range. The LMV61x input common mode extends
200 mV beyond the supplies and the output can
swing rail-to-rail unloaded and within 30 mV with 2-kΩ
load at 1.8-V supply. The LMV61x achieves a gain
bandwidth of 1.4 MHz while drawing 100-µA (typical)
quiescent current.
1
•
•
•
•
•
•
Supply Values: 1.8 V (Typical)
Ensured 1.8-V, 2.7-V, and 5-V Specifications
Output Swing:
– 80 mV From Rail With 600-Ω Load
– 30 mV From Rail With 2-kΩ Load
VCM = 200 mV Beyond Rails
100-µA Supply Current (Per Channel)
1.4-MHz Gain Bandwidth Product
Maximum VOS = 4 mV
Temperature Range: −40°C to +125°C
Create a Custom Design Using the LMV61x With
the WEBENCH® Power Designer
The industrial-plus temperature range of −40°C to
125°C allows the LMV61x to accommodate a broad
range of extended environment applications.
2 Applications
•
•
•
•
•
•
•
Consumer Communication
Consumer Computing
PDAs
Audio Pre-Amplifiers
Portable or Battery-Powered Electronic Equipment
Supply Current Monitoring
Battery Monitoring
Typical Application
V
PART NUMBER
LMV611
+
LMV612
±
2 kŸ
LMV614
±
0.2
Device Information(1)
+
R1
RSENSE
The LMV611 is offered in the tiny 5-pin SC70
package, the LMV612 in space-saving 8-pin VSSOP
and SOIC packages, and the LMV614 in 14-pin
TSSOP and SOIC packages. These small package
amplifiers offer an ideal solution for applications
requiring minimum PCB footprint. Applications with
area constrained PCB requirements include portable
and battery-operated electronics.
Q1
2N3906
R2
PACKAGE
BODY SIZE (NOM)
SOT-23 (5)
2.92 mm × 1.60 mm
SC70 (5)
2.00 mm × 1.25 mm
VSSOP (8)
3.00 mm × 3.00 mm
SOIC (8)
4.90 mm × 3.91 mm
TSSOP (14)
5.00 mm × 4.40 mm
SOIC (14)
8.64 mm × 3.90 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
+
2 kŸ
VOUT
Load
R3
10 kŸ
ICHARGE
VOUT
RSENSE x R3
x ICh arg e 1 : x ICh arg e
R1
Copyright © 2016, Texas Instruments Incorporated
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
LMV611, LMV612, LMV614
SNOSC69D – APRIL 2012 – REVISED MARCH 2017
www.ti.com
Table of Contents
1
2
3
4
5
6
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
6.1
6.2
6.3
6.4
6.5
6.6
6.7
6.8
6.9
6.10
6.11
7
1
1
1
2
3
5
Absolute Maximum Ratings ...................................... 5
ESD Ratings.............................................................. 5
Recommended Operating Conditions....................... 5
Thermal Information .................................................. 5
Electrical Characteristics – 1.8 V (DC) ..................... 6
Electrical Characteristics – 1.8 V (AC)...................... 7
Electrical Characteristics – 2.7 V (DC) ..................... 7
Electrical Characteristics – 2.7 V (AC)...................... 8
Electrical Characteristics – 5 V (DC) ........................ 9
Electrical Characteristics – 5 V (AC)..................... 10
Typical Characteristics .......................................... 11
Detailed Description ............................................ 16
7.1 Overview ................................................................ 16
7.2 Functional Block Diagram ....................................... 16
7.3 Feature Description................................................. 16
7.4 Device Functional Modes ....................................... 17
8
Application and Implementation ........................ 18
8.1 Application Information............................................ 18
8.2 Typical Applications ................................................ 20
9 Power Supply Recommendations...................... 22
10 Layout................................................................... 22
10.1 Layout Guidelines ................................................. 22
10.2 Layout Example ................................................... 22
11 Device and Documentation Support ................. 23
11.1
11.2
11.3
11.4
11.5
11.6
11.7
11.8
Device Support ....................................................
Documentation Support ........................................
Related Links ........................................................
Receiving Notification of Documentation Updates
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
23
23
23
24
24
25
25
25
12 Mechanical, Packaging, and Orderable
Information ........................................................... 25
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision C (July 2016) to Revision D
Page
•
Added links for WEBENCH ................................................................................................................................................... 1
•
Changed Slew Rate vs Supply title to reflect LMV611 and LMV614 only............................................................................ 13
•
Added Slew Rate vs Supply Graph for LMV612 only .......................................................................................................... 13
Changes from Revision B (March 2013) to Revision C
Page
•
Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section .................................................................................................. 1
•
Changed values in the Thermal Information table to align with JEDEC standards................................................................ 5
Changes from Revision A (March 2012) to Revision B
•
2
Page
Changed layout of National Semiconductor data sheet to TI format...................................................................................... 1
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Copyright © 2012–2017, Texas Instruments Incorporated
Product Folder Links: LMV611 LMV612 LMV614
LMV611, LMV612, LMV614
www.ti.com
SNOSC69D – APRIL 2012 – REVISED MARCH 2017
5 Pin Configuration and Functions
DCK and DBV Packages
5-Pin SC70 and SOT-23
Top View
1
5
+IN
+
2
V±
V+
±
4
3
±IN
OUTPUT
Pin Functions – LMV611
PIN
NO.
NAME
1
+IN
–
TYPE (1)
DESCRIPTION
I
Noninverting input
2
V
P
Negative supply input
3
–IN
I
Inverting input
4
OUTPUT
O
Output
P
Positive supply input
+
5
(1)
V
I = Input, O = Output, and P = Power
DGK and D Packages
8-Pin VSSOP and SOIC
Top View
1
8
+
V
OUT A
A
2
-
+
7
-IN A
OUT B
3
6
+IN A
+
-
-IN B
B
4
5
V
+IN B
Pin Functions – LMV612
PIN
TYPE (1)
DESCRIPTION
NO.
NAME
1
OUT A
O
Output A
2
–IN A
I
Inverting input A
3
+IN A
I
Noninverting input A
4
V–
P
Negative supply input
5
+IN B
I
Noninverting input B
6
–IN B
I
Inverting input B
7
OUT B
O
Output B
P
Positive supply input
8
(1)
+
V
I = Input, O = Output, and P = Power
Copyright © 2012–2017, Texas Instruments Incorporated
Product Folder Links: LMV611 LMV612 LMV614
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3
LMV611, LMV612, LMV614
SNOSC69D – APRIL 2012 – REVISED MARCH 2017
www.ti.com
PW and D Packages
14-Pin TSSOP and SOIC
Top View
1
OUT A
IN A±
IN A+
V+
IN B+
±
IN B
2
A
±
D
+
+
14
OUT D
13
IN D±
±
3
12
4
11
5
10
IN D+
V±
IN C+
6
+
±
B
9
±
+
C
7
IN C±
8
OUT B
OUT C
Pin Functions – LMV614
PIN
TYPE (1)
DESCRIPTION
NO.
NAME
1
OUT A
O
Output A
2
IN A–
I
Inverting input A
3
+
IN A
I
Noninverting input A
4
V+
P
Positive supply input
5
IN B+
I
Noninverting input B
6
IN B–
I
Inverting input B
7
OUT B
O
Output B
8
OUT C
O
Output C
9
IN C–
I
Inverting input C
+
10
IN C
I
Noninverting input C
11
V–
P
Negative supply input
12
IN D+
I
Noninverting input D
13
–
IN D
I
Inverting input D
14
OUT D
O
Output D
(1)
4
I = Input, O = Output, and P = Power
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Copyright © 2012–2017, Texas Instruments Incorporated
Product Folder Links: LMV611 LMV612 LMV614
LMV611, LMV612, LMV614
www.ti.com
SNOSC69D – APRIL 2012 – REVISED MARCH 2017
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1) (2) (3)
MIN
Differential input voltage
MAX
Supply voltage (V+–V −)
6
V– – 0.3
Voltage at input or output pin
Storage temperature, Tstg
(2)
(3)
(4)
V
V++ 0.3
V
150
°C
150
°C
Junction temperature, TJMAX (4)
(1)
UNIT
±Supply voltage
–65
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and
specifications.
Soldering specifications for all packages available at www.ti.com and Absolute Maximum Ratings for Soldering.
The maximum power dissipation is a function of TJ(MAX), RθJA, and TA. The maximum allowable power dissipation at any ambient
temperature is PD = (TJ(MAX) – TA) / RθJA. All numbers apply for packages soldered directly onto a PCB.
6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic
discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
±2000
Machine model (MM) (2)
±200
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
Machine model, applicable std. JESD22-A115-A (ESD MM std. of JEDEC) Field-Induced Charge-Device Model, applicable std. JESD22C101-C (ESD FICDM std. of JEDEC).
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
Supply voltage
1.8
5.5
UNIT
V
Temperature
–40
125
°C
6.4 Thermal Information
LMV611
THERMAL METRIC (1)
LMV612
LMV614
DBV
(SOT-23)
DCK
(SC70)
D
(SOIC)
DGK
(VSSOP)
D
(SOIC)
PW
(TSSOP)
UNIT
5 PINS
5 PINS
8 PINS
8 PINS
14 PINS
14 PINS
RθJA
Junction-to-ambient thermal
resistance
197.2
285.9
125.9
184.5
94.4
124.8
°C/W
RθJC(top)
Junction-to-case (top) thermal
resistance
156.7
115.9
70.2
74.3
52.5
51.4
°C/W
RθJB
Junction-to-board thermal
resistance
55.6
63.7
66.5
105.1
48.9
67.2
°C/W
ψJT
Junction-to-top
characterization parameter
41.4
4.5
19.8
13.1
14.3
6.6
°C/W
ψJB
Junction-to-board
characterization parameter
55
62.9
65.9
103.6
48.6
66.6
°C/W
RθJC(bot)
Junction-to-case (bottom)
thermal resistance
—
—
—
—
—
—
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
Copyright © 2012–2017, Texas Instruments Incorporated
Product Folder Links: LMV611 LMV612 LMV614
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LMV611, LMV612, LMV614
SNOSC69D – APRIL 2012 – REVISED MARCH 2017
www.ti.com
6.5 Electrical Characteristics – 1.8 V (DC)
All limits ensured for TJ = 25°C, V+ = 1.8 V, V − = 0 V, VCM = V+/ 2, VO = V+/ 2, and RL > 1 MΩ (unless otherwise noted). (1)
PARAMETER
TYP (3)
MAX (2)
LMV611 (single)
1
4
LMV612 (dual) and
LMV614 (quad)
1
5.5
TEST CONDITIONS
MIN (2)
UNIT
VOS
Input offset voltage
TCVOS
Input offset voltage average drift
5.5
µV/°C
IB
Input bias current
15
nA
IOS
Input offset current
13
IS
Supply current (per channel)
CMRR
PSRR
Common-mode rejection ratio
Power supply rejection ratio
103
LMV611, 0 V ≤ VCM ≤ 0.6 V,
1.4 V ≤ VCM ≤ 1.8 V (4)
60
78
LMV612 and LMV614,
0 V ≤ VCM ≤ 0.6 V,
1.4 V ≤ VCM ≤ 1.8 V (4)
55
76
−0.2 V ≤ VCM ≤ 0 V,
1.8 V ≤ VCM ≤ 2 V
50
72
1.8 V ≤ V+ ≤ 5 V
V , TA = 25°C
CMVR
Input common-mode voltage
For CMRR range
≥ 50 dB
AV
Large signal voltage gain
LMV612 (dual) and
LMV614 (quad)
V – 0.2
2.1
TA = −40°C to
85°C
IO
(1)
(2)
(3)
(4)
(5)
6
Output short-circuit current
V+ + 0.2
V– + 0.2
V+ – 0.2
101
RL = 2 kΩ to 0.9 V,
VO = 0.2 V to 1.6 V, VCM = 0.5 V
80
105
RL = 600 Ω to 0.9 V,
VO = 0.2 V to 1.6 V, VCM = 0.5 V
75
90
RL = 2 kΩ to 0.9 V,
VO = 0.2 V to 1.6 V, VCM = 0.5 V
78
100
1.65
1.72
V
dB
0.077
1.75
VIN = ±100 mV
(5)
dB
V+
77
RL = 2 kΩ to 0.9 V
dB
V–
VIN = ±100 mV
Output swing
µA
–0.2
RL = 600 Ω to 0.9 V,
VO = 0.2 V to 1.6 V, VCM = 0.5 V
RL = 600 Ω to 0.9 V
VO
–
V+, TA = 25°C
TA = 125°C
Large signal voltage gain
LMV611 (single)
nA
185
100
–
mV
0.105
1.77
0.024
Sourcing, VO = 0 V,
VIN = 100 mV
8
Sinking, VO = 1.8 V,
VIN = –100 mV
9
V
0.035
mA
Electrical characteristics values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in
very limited self-heating of the device such that TJ = TA. No assurance of parametric performance is indicated in the electrical tables
under conditions of internal self-heating where TJ > TA. See Application and Implementation for information of temperature derating of
the device. Absolute Maximum Ratings indicated junction temperature limits beyond which the device may be permanently degraded,
either mechanically or electrically.
All limits are specified by testing or statistical analysis.
Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and also depends on the application and configuration. The typical values are not tested and are not ensured on shipped
production material.
For specified temperature ranges, see Input common mode voltage specifications.
Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in
exceeding the maximum allowed junction temperature of 150°C. Output currents in excess of 45 mA over long term may adversely
affect reliability.
Submit Documentation Feedback
Copyright © 2012–2017, Texas Instruments Incorporated
Product Folder Links: LMV611 LMV612 LMV614
LMV611, LMV612, LMV614
www.ti.com
SNOSC69D – APRIL 2012 – REVISED MARCH 2017
6.6 Electrical Characteristics – 1.8 V (AC)
All limits ensured for TJ = 25°C, V+ = 1.8 V, V − = 0 V, VCM = V+/ 2, VO = V+/ 2, and RL > 1 MΩ (unless otherwise noted). (1)
PARAMETER
TEST CONDITIONS
MIN (2)
(4)
TYP (3)
MAX (2)
UNIT
SR
Slew rate
0.35
V/µs
GBW
Gain-bandwidth product
1.4
MHz
Φm
Phase margin
67
°
Gm
Gain margin
7
dB
en
Input-referred voltage noise
f = 10 kHz, VCM = 0.5 V
60
nV/√Hz
in
Input-referred current noise
f = 10 kHz
0.08
pA/√Hz
Total harmonic distortion
f = 1 kHz, AV = +1,
RL = 600 Ω, VIN = 1 VPP
THD
0.023%
Amp-to-amp isolation (5)
(1)
(2)
(3)
(4)
(5)
123
dB
Electrical characteristics values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in
very limited self-heating of the device such that TJ = TA. No assurance of parametric performance is indicated in the electrical tables
under conditions of internal self-heating where TJ > TA. See Application and Implementation for information of temperature derating of
the device. Absolute Maximum Ratings indicated junction temperature limits beyond which the device may be permanently degraded,
either mechanically or electrically.
All limits are specified by testing or statistical analysis.
Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and also depends on the application and configuration. The typical values are not tested and are not ensured on shipped
production material.
Connected as voltage follower with input step from V− to V+. Number specified is the slower of the positive and negative slew rates.
Input-referred, RL = 100 kΩ connected to V+ / 2. Each amp excited in turn with 1 kHz to produce VO = 3 VPP (for supply voltages < 3 V,
VO = V+).
6.7 Electrical Characteristics – 2.7 V (DC)
All limits ensured for TJ = 25°C, V+ = 2.7 V, V − = 0 V, VCM = V+/ 2, VO = V+/ 2, and RL > 1 MΩ (unless otherwise noted). (1)
TYP (3)
MAX (2)
LMV611 (single)
1
4
LMV612 (dual) and
LMV614 (quad)
1
5.5
PARAMETER
TEST CONDITIONS
MIN (2)
UNIT
VOS
Input offset voltage
TCVOS
Input offset voltage average drift
5.5
µV/°C
IB
Input bias current
15
nA
IOS
Input offset current
IS
Supply current (per channel)
CMRR
PSRR
(1)
(2)
(3)
(4)
Common-mode rejection ratio
Power supply rejection ratio
mV
8
105
LMV611, 0 V ≤ VCM ≤ 1.5 V,
2.3 V ≤ VCM ≤ 2.7 V (4)
60
81
LMV612 and LMV614,
0 V ≤ VCM ≤ 1.5 V,
2.3 V ≤ VCM ≤ 2.7 V (4)
55
80
−0.2 V ≤ VCM ≤ 0 V,
2.7 V ≤ VCM ≤ 2.9 V
50
74
1.8 V ≤ V+ ≤ 5 V,
VCM = 0.5 V
nA
190
100
µA
dB
dB
Electrical characteristics values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in
very limited self-heating of the device such that TJ = TA. No assurance of parametric performance is indicated in the electrical tables
under conditions of internal self-heating where TJ > TA. See Application and Implementation for information of temperature derating of
the device. Absolute Maximum Ratings indicated junction temperature limits beyond which the device may be permanently degraded,
either mechanically or electrically.
All limits are specified by testing or statistical analysis.
Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and also depends on the application and configuration. The typical values are not tested and are not ensured on shipped
production material.
For specified temperature ranges, see input common mode voltage specifications.
Copyright © 2012–2017, Texas Instruments Incorporated
Product Folder Links: LMV611 LMV612 LMV614
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LMV611, LMV612, LMV614
SNOSC69D – APRIL 2012 – REVISED MARCH 2017
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Electrical Characteristics – 2.7 V (DC) (continued)
All limits ensured for TJ = 25°C, V+ = 2.7 V, V − = 0 V, VCM = V+/ 2, VO = V+/ 2, and RL > 1 MΩ (unless otherwise noted).(1)
PARAMETER
TEST CONDITIONS
–
V ,TA = 25°C
VCM
Input common-mode voltage
For CMRR
range ≥ 50 dB
AV
Large signal voltage gain
LMV612 (dual) and
LMV614 (quad)
TA = –40°C to
85°C
V+
V– + 0.2
V+ – 0.2
104
RL = 2 kΩ to 1.35 V,
VO = 0.2 V to 2.5 V
92
110
RL = 600 Ω to 1.35 V,
VO = 0.2 V to 2.5 V
78
90
RL = 2 kΩ to 1.35 V,
VO = 0.2 V to 2.5 V
81
100
2.55
2.62
Output short-circuit current (5)
(5)
V
dB
0.083
2.65
VIN = ±100 mV
IO
UNIT
V+ + 0.2
V–
87
RL = 2 kΩ to 1.35 V
MAX (2)
–0.2
3
VIN = ±100 mV
Output swing
TYP (3)
RL = 600 Ω to 1.35 V,
VO = 0.2 V to 2.5 V
RL = 600 Ω to 1.35 V
VO
V – 0.2
V+,TA = 25°C
TA = 125°C
Large signal voltage gain
LMV611 (single)
MIN (2)
–
0.11
2.675
0.025
Sourcing, VO = 0 V,
VIN = 100 mV
30
Sinking, VO = 0 V,
VIN = –100 mV
25
V
0.04
mA
Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in
exceeding the maximum allowed junction temperature of 150°C. Output currents in excess of 45 mA over long term may adversely
affect reliability.
6.8 Electrical Characteristics – 2.7 V (AC)
All limits ensured for TJ = 25°C, V+ = 2.7 V, V − = 0 V, VCM = 1 V, VO = 1.35 V, and RL > 1 MΩ (unless otherwise noted). (1)
PARAMETER
SR
Slew rate
GBW
TEST CONDITIONS
MIN (2)
(4)
TYP (3)
MAX (2)
UNIT
0.4
V/µs
Gain-bandwidth product
1.4
MHz
Φm
Phase margin
70
°
Gm
Gain margin
en
Input-referred voltage noise
f = 10 kHz, VCM = 0.5 V
in
Input-referred current noise
f = 10 kHz
THD
Total harmonic distortion
f = 1 kHz, AV = +1,
RL = 600 Ω, VIN = 1 VPP
Amp-to-amp isolation
(1)
(2)
(3)
(4)
(5)
8
7.5
dB
57
nV/√Hz
0.08
pA/√Hz
0.022%
(5)
123
dB
Electrical characteristics values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in
very limited self-heating of the device such that TJ = TA. No assurance of parametric performance is indicated in the electrical tables
under conditions of internal self-heating where TJ > TA. See Application and Implementation for information of temperature derating of
the device. Absolute Maximum Ratings indicated junction temperature limits beyond which the device may be permanently degraded,
either mechanically or electrically.
All limits are specified by testing or statistical analysis.
Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and also depends on the application and configuration. The typical values are not tested and are not ensured on shipped
production material.
Connected as voltage follower with input step from V− to V+. Number specified is the slower of the positive and negative slew rates.
Input-referred, RL = 100 kΩ connected to V+ / 2. Each amp excited in turn with 1 kHz to produce VO = 3 VPP (for supply voltages < 3 V,
VO = V+).
Submit Documentation Feedback
Copyright © 2012–2017, Texas Instruments Incorporated
Product Folder Links: LMV611 LMV612 LMV614
LMV611, LMV612, LMV614
www.ti.com
SNOSC69D – APRIL 2012 – REVISED MARCH 2017
6.9 Electrical Characteristics – 5 V (DC)
All limits ensured for TJ = 25°C, V+ = 5 V, V − = 0 V, VCM = V+/ 2, VO = V+/ 2, and RL > 1 MΩ (unless otherwise noted). (1)
TYP (3)
MAX (2)
LMV611 (single)
1
4
LMV612 (dual) and
LMV614 (quad)
1
5.5
PARAMETER
TEST CONDITIONS
MIN (2)
VOS
Input offset voltage
TCVOS
Input offset voltage average drift
5.5
IB
Input bias current
14
IOS
Input offset current
IS
Supply current (per channel)
CMRR
Common-mode rejection ratio
PSRR
Power supply rejection ratio
116
0 V ≤ VCM ≤ 3.8 V,
4.6 V ≤ VCM ≤ 5 V (4)
60
86
–0.2 V ≤ VCM ≤ 0 V
5 V ≤ VCM ≤ 5.2 V
50
78
1.8 V ≤ V+ ≤ 5 V,
VCM = 0.5 V
For CMRR range
≥ 50 dB
V – 0.2
V , TA = 25°C
Large signal voltage gain
LMV612 (dual) and
LMV614 (quad)
VO
Output swing
(1)
(2)
(3)
(4)
(5)
Output short-circuit current (5)
210
µA
nA
V+ + 0.2
V+
V– + 0.3
V+ – 0.3
RL = 600 Ω to 2.5 V,
VO = 0.2 V to 4.8 V
88
102
RL = 2 kΩ to 2.5 V,
VO = 0.2 V to 4.8 V
94
113
RL = 600 Ω to 2.5 V,
VO = 0.2 V to 4.8 V
81
90
RL = 2 kΩ to 2.5 V,
VO = 0.2 V to 4.8 V
85
100
RL = 600 Ω to 2.5 V
4.855
4.89
4.945
4.967
V
dB
VIN = ±100 mV
RL = 2 kΩ to 2.5 V
dB
V–
0.12
VIN = ±100 mV
IO
nA
–0.2
5.3
TA = –40°C to
85°C
TA = 125°C
AV
35
100
–
+
Large signal voltage gain
LMV611 (single)
µV/°C
dB
V , TA = 25°C
Input common-mode voltage
mV
9
–
CMVR
UNIT
LMV611, Sourcing, VO = 0 V,
VIN = 100 mV
Sinking, VO = 5 V,
VIN = –100 mV
0.037
0.16
V
0.065
100
mA
65
Electrical characteristics values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in
very limited self-heating of the device such that TJ = TA. No assurance of parametric performance is indicated in the electrical tables
under conditions of internal self-heating where TJ > TA. See Application and Implementation for information of temperature derating of
the device. Absolute Maximum Ratings indicated junction temperature limits beyond which the device may be permanently degraded,
either mechanically or electrically.
All limits are specified by testing or statistical analysis.
Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and also depends on the application and configuration. The typical values are not tested and are not ensured on shipped
production material.
For specified temperature ranges, see Input common mode voltage specifications.
Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in
exceeding the maximum allowed junction temperature of 150°C. Output currents in excess of 45 mA over long term may adversely
affect reliability.
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6.10 Electrical Characteristics – 5 V (AC)
All limits ensured for TJ = 25°C, V+ = 5 V, V − = 0 V, VCM = V+/ 2, VO = 2.5 V, and R L > 1 MΩ (unless otherwise noted). (1)
PARAMETER
TEST CONDITIONS
MIN (2)
(4)
TYP (3)
MAX (2)
UNIT
SR
Slew rate
0.42
V/µs
GBW
Gain-bandwidth product
1.5
MHz
Φm
Phase margin
71
°
Gm
Gain margin
8
dB
en
Input-referred voltage noise
f = 10 kHz, VCM = 1 V
50
nV/√Hz
in
Input-referred current noise
f = 10 kHz
0.08
pA/√Hz
Total harmonic distortion
f = 1 kHz, AV = +1,
RL = 600 Ω, VO = 1 V PP
THD
0.022%
Amp-to-amp isolation (5)
(1)
(2)
(3)
(4)
(5)
10
123
dB
Electrical characteristics values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in
very limited self-heating of the device such that TJ = TA. No assurance of parametric performance is indicated in the electrical tables
under conditions of internal self-heating where TJ > TA. See Application and Implementation for information of temperature derating of
the device. Absolute Maximum Ratings indicated junction temperature limits beyond which the device may be permanently degraded,
either mechanically or electrically.
All limits are specified by testing or statistical analysis.
Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and also depends on the application and configuration. The typical values are not tested and are not ensured on shipped
production material.
Connected as voltage follower with input step from V− to V+. Number specified is the slower of the positive and negative slew rates.
Input-referred, RL = 100 kΩ connected to V+ / 2. Each amp excited in turn with 1 kHz to produce VO = 3 VPP (for supply voltages < 3 V,
VO = V+).
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6.11 Typical Characteristics
VS = 5 V, single supply, TA = 25°C (unless otherwise noted)
160
3
140
2.5
120
2
100
1.5
25°C
VOS (mV)
SUPPLY CURRENT (éA)
VS = 1.8V
125°C 85°C
25°C
80
-40°C
60
-40°C
1
0.5
85°C
125°C
40
0
20
-0.5
0
0
1
2
3
4
5
-1
-0.4
6
0
0.4
0.8
1.2
Figure 1. Supply Current vs Supply Voltage (LMV611)
3
VS = 5V
VS = 2.7V
2.5
2.5
2
2
-40°C
-40°C
1.5
VOS (mV)
VOS (mV)
25°C
1
85°C
1.5
1
0.5
125°C
125°C
0
0
-0.5
-0.5
-1
-0.4
0.1
0.6
1.1
1.6
2.1
2.6
-1
-0.4
3.1
0.6
1.6
Figure 3. Offset Voltage vs Common-Mode Range
2.6
85°C
4.6
3.6
5.6
Figure 4. Offset Voltage vs Common-Mode Range
100
100
VS = 5V
VS = 5V
10
10
ISINK (mA)
ISOURCE (mA)
25°C
VCM (V)
VCM (V)
VS = 2.7V
1
VS = 1.8V
0.01
0.1
VS = 2.7V
1
VS = 1.8V
0.1
0.1
0.01
0.001
2.4
Figure 2. Offset Voltage vs Common-Mode Range
3
0.5
2
1.6
VCM (V)
SUPPLY VOLTAGE (V)
1
10
OUTPUT VOLTAGE REFERENCED TO V+ (V)
Figure 5. Sourcing Current vs Output Voltage
0.01
0.001
0.01
0.1
1
10
OUTPUT VOLTAGE REF TO GND (V)
Figure 6. Sinking Current vs Output Voltage
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Typical Characteristics (continued)
12
OUTPUT VOLTAGE PROXIMITY TO
SUPPLY VOLTAGE (mV ABSOLUTE VALUE)
OUTPUT VOLTAGE PROXIMITY TO SUPPLY
VOLTAGE (mV ABSOLUTE VALUE)
VS = 5 V, single supply, TA = 25°C (unless otherwise noted)
140
RL = 600:
130
NEGATIVE SWING
120
110
100
90
80
POSITIVE SWING
70
60
0
1
4
2
3
SUPPLY VOLTAGE (V)
5
6
45
RL = 2k:
40
NEGATIVE SWING
35
30
25
POSITIVE SWING
20
0
1
2
3
4
5
6
SUPPLY VOLTAGE (V)
Figure 7. Output Voltage Swing vs Supply Voltage
Figure 8. Output Voltage Swing vs Supply Voltage
Figure 9. Gain and Phase vs Frequency
Figure 10. Gain and Phase vs Frequency
Figure 11. Gain and Phase vs Frequency
Figure 12. Gain and Phase vs Frequency
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Typical Characteristics (continued)
VS = 5 V, single supply, TA = 25°C (unless otherwise noted)
90
100
VS = 5V
85
80
80
VS = 2.7V
PSRR (dB)
CMRR (dB)
VS = 5V
+PSRR
90
75
VS = 1.8V
70
-PSRR
60
70
50
65
40
60
1k
100
FREQUENCY (Hz)
10
30
10
10k
100
1k
FREQUENCY (Hz)
Figure 13. CMRR vs Frequency
Figure 14. PSRR vs Frequency
1000
1
INPUT CURRENT NOISE (pA/ Hz)
INPUT VOLTAGE NOISE (nV/ Hz)
10k
100
10
10
100
1k
10k
0.1
0.01
10
100k
100
1k
10k
100k
FREQUENCY (Hz)
Figure 15. Input Voltage Noise vs Frequency
FREQUENCY (Hz)
Figure 16. Input Current Noise vs Frequency
10
10
RL = 600:
RL = 600:
AV = +1
AV = +10
1
THD (%)
THD (%)
1
5V
1.8V
0.1
0.1
1.8V
2.7V
2.7V
5V
0.01
10
100
1k
10k
100k
0.01
10
100
1k
10k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 17. THD vs Frequency
Figure 18. THD vs Frequency
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Typical Characteristics (continued)
VS = 5 V, single supply, TA = 25°C (unless otherwise noted)
0.5
0.5
FALLING EDGE
0.4
RISING EDGE
0.35
RL = 2k:
0.3
FALLING EDGE
0.45
SLEW RATE (V/Ps)
SLEW RATE (V/Ps)
0.45
0.4
0.35
RISING EDGE
RL = 2k:
AV = +1
VIN = 1VPP
0.3
AV = +1
VIN = 1VPP
0.25
0
1
2
3
4
5
6
0.25
0
1
SUPPLY VOLTAGE (V)
RL = 2 k:
Slew
VS = 2.7V
RL = 2 k:
TIME (2.5 Ps/DIV)
Figure 22. Small Signal Noninverting Response
VIN
VS = 5V
(900 mV/div)
RL = 2 k:
(50 mV/DIV)
OUTPUT SIGNAL
INPUT SIGNAL
TIME (2.5 Ps/DIV)
Figure 21. Small Signal Noninverting Response
VOUT
VS = 1.8V
RL = 2k:
AV = +1
TIME (10 Ps/div)
TIME (2.5 Ps/DIV)
Figure 23. Small Signal Noninverting Response
14
6
(50 mV/DIV)
INPUT SIGNAL
VS = 1.8V
5
Figure 20. Slew Rate vs Supply Voltage
LMV612 Only
OUTPUT SIGNAL
INPUT SIGNAL
OUTPUT SIGNAL
(50 mV/DIV)
Figure 19. Slew Rate vs Supply Voltage
LMV611 and LMV614
2
3
4
SUPPLY VOLTAGE (V)
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Figure 24. Large Signal Noninverting Response
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Typical Characteristics (continued)
VS = 5 V, single supply, TA = 25°C (unless otherwise noted)
VIN
(2.5 V/div)
(1.35V/DIV)
VIN
VOUT
VOUT
VS = 2.7V
VS = 5.0V
RL = 2 k:
RL = 2k:
AV = +1
AV = +1
TIME (10 Ps/DIV)
Figure 25. Large Signal Noninverting Response
TIME (10 Ps/div)
Figure 26. Large Signal Noninverting Response
90
90
SHORT CIRCUIT C URRENT (mA)
SHORT CIRCUIT CURRENT (mA)
5V
80
5V
70
60
50
40
2.7V
30
20
1.8V
10
0
-40
10
60
TEMPERATURE (°C)
110
Figure 27. Short-Circuit Current vs Temperature (Sinking)
80
70
60
50
40
2.7V
30
20
1.8V
10
0
-40
10
60
110
TEMPERATURE (°C)
Figure 28. Short-Circuit Current vs Temperature (Sourcing)
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7 Detailed Description
7.1 Overview
The LMV61x devices achieve a gain bandwidth of 1.4 MHz while drawing 100-µA (typical) quiescent current.
They also provide a rail-to-rail input with a maximum input offset voltage of 4 mV. Lastly, the LMV61x input
common mode extends 200 mV beyond the supplies and the output can swing rail-to-rail unloaded and within
30 mV with 2-kΩ load at 1.8-V supply.
7.2 Functional Block Diagram
IP
Q16
nIN
Q18
VBIAS1
Q19
Q17
IN
I14
I15
M14
M15
VCC
M62
M100
Out
Class AB
Control
pIN
VBIAS2
M12
M13
I12
I13
M60
M101
VEE
Copyright © 2016, Texas Instruments Incorporated
7.3 Feature Description
7.3.1 Input and Output Stage
The rail-to-rail input stage of this family provides more flexibility for the designer. The LMV61x use a
complimentary PNP and NPN input stage in which the PNP stage senses common-mode voltage near V− and
the NPN stage senses common-mode voltage near V+. The transition from the PNP stage to NPN stage occurs
1 V below V+. Because both input stages have their own offset voltage, the offset of the amplifier becomes a
function of the input common-mode voltage and has a crossover point at 1 V below V+.
This VOS crossover point can create problems for both DC- and AC-coupled signals if proper care is not taken.
Large input signals that include the VOS crossover point causes distortion in the output signal. One way to avoid
such distortion is to keep the signal away from the crossover. For example, in a unity-gain buffer configuration
and with VS = 5 V, a 5-V peak-to-peak signal contains input-crossover distortion while a 3-V peak-to-peak signal
centered at 1.5 V does not contain input-crossover distortion as it avoids the crossover point. Another way to
avoid large signal distortion is to use a gain of −1 circuit which avoids any voltage excursions at the input
terminals of the amplifier. In that circuit, the common-mode DC voltage can be set at a level away from the VOS
crossover point. For small signals, this transition in VOS shows up as a VCM dependent spurious signal in series
with the input signal and can effectively degrade small signal parameters such as gain and common-mode
rejection ratio. To resolve this problem, the small signal must be placed such that it avoids the VOS crossover
point. In addition to the rail-to-rail performance, the output stage can provide enough output current to
drive 600-Ω loads. Because of the high current capability, take care to not exceed the 150°C maximum junction
temperature specification.
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7.4 Device Functional Modes
7.4.1 Input Bias Current Consideration
The LMV61x family has a complementary bipolar input stage. The typical input bias current (IB) is 15 nA. The
input bias current can develop a significant offset voltage. This offset is primarily due to IB flowing through the
negative feedback resistor, RF. For example, if IB is 50 nA and RF is 100 kΩ, then an offset voltage of 5 mV
develops (VOS = IB × RF). Using a compensation resistor (RC), as shown in Figure 29, cancels this effect. But the
input offset current (IOS) still contributes to an offset voltage in the same manner.
RF
Ri
Vi
±
Vo
(a)
Vo
(b)
Vo
(c)
+
Rc = Ri RF
RF
Ri
±
Vi
+
Rc = Ri RF
RF
±
Vi
+
RC = RF
Figure 29. Canceling Offset Voltage Due to Input Bias Current
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8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The LMV61x devices bring performance, economy, and ease-of-use to low-voltage, low-power systems. They
provide rail-to-rail input and rail-to-rail output swings into heavy loads.
8.1.1 Half-Wave Rectifier With Rail-to-Ground Output Swing
Because the LMV61x input common-mode range includes both positive and negative supply rails and the output
can also swing to either supply, achieving half-wave rectifier functions in either direction is an easy task. All that
is needed are two external resistors; there is no need for diodes or matched resistors. The half wave rectifier can
have either positive or negative going outputs, depending on the way the circuit is arranged.
In Figure 30 the circuit is referenced to ground, while in Figure 31 the circuit is biased to the positive supply.
These configurations implement the half-wave rectifier because the LMV61x can not respond to one-half of the
incoming waveform. It can not respond to one-half of the incoming because the amplifier can not swing the
output beyond either rail. Therefore, the output disengages during this half cycle. During the other half cycle,
however, the amplifier achieves a half wave that can have a peak equal to the total supply voltage. RI must be
large enough not to load the LMV61x.
RI
VIN
VIN
RI
+
VOUT
0
t
±
VOUT
VCC
t
Figure 30. Half-Wave Rectifier With Rail-to-Ground Output Swing Referenced to Ground
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Application Information (continued)
VCC
VIN
+
VOUT
VCC
t
VIN
±
RI
RI
VOUT
VCC
t
Figure 31. Half-Wave Rectifier With Negative-Going Output Referenced to VCC
8.1.2 Instrumentation Amplifier With Rail-to-Rail Input and Output
Some manufactures make rail-to-rail op amps out of op amps that are otherwise non-rail-to-rail by using a
resistive divider on the inputs. The resistors divide the input voltage to get a rail-to-rail input range. The problem
with this method is that it also divides the signal, so to get the obtained gain, the amplifier must have a higher
closed-loop gain. This raises the noise and drift by the internal gain factor and lowers the input impedance. Any
mismatch in these precision resistors reduces the CMRR, as well. The LMV61x is rail-to-rail and therefore
doesn’t have these disadvantages.
Using three of the LMV61x amplifiers, an instrumentation amplifier with rail-to-rail inputs and outputs can be
made as shown in Figure 32.
In this example, amplifiers on the left side act as buffers to the differential stage. These buffers assure that the
input impedance is very high and require no precision matched resistors in the input stage. They also assure that
the difference amp is driven from a voltage source. This is necessary to maintain the CMRR set by the matching
R1-R2 with R3-R4. The gain is set by the ratio of R2/R1 and R3 must equal R1 and R4 equal R2. With both rail-torail input and output ranges, the input and output are only limited by the supply voltages. Remember that even
with rail-to-rail outputs, the output can not swing past the supplies so the combined common-mode voltages plus
the signal must not be greater that the supplies or limiting occurs.
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Application Information (continued)
R2
R1
+
+
±
±
±
+
+
R3
±
R4
Figure 32. Rail-to-Rail Instrumentation Amplifier
8.2 Typical Applications
8.2.1 High-Side Current Sensing
V
+
+
R1
±
2 kŸ
RSENSE
±
0.2
Q1
2N3906
R2
+
2 kŸ
VOUT
Load
R3
10 kŸ
ICHARGE
VOUT
RSENSE x R3
x ICh arg e 1 : x ICh arg e
R1
Copyright © 2016, Texas Instruments Incorporated
Figure 33. High-Side, Current-Sensing Schematic
8.2.1.1 Design Requirements
The high-side, current-sensing circuit (Figure 33) is commonly used in a battery charger to monitor charging
current to prevent overcharging. A sense resistor RSENSE is connected to the battery directly. This system
requires an op amp with rail-to-rail input. The LMV61x are ideal for this application because its common-mode
input range goes up to the rail.
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Typical Applications (continued)
8.2.1.1.1 Custom Design With WEBENCH® Tools
Click here to create a custom design using the LMV61x devices with the WEBENCH® Power Designer.
1. Start by entering the input voltage (VIN), output voltage (VOUT), and output current (IOUT) requirements.
2. Optimize the design for key parameters such as efficiency, footprint, and cost using the optimizer dial.
3. Compare the generated design with other possible solutions from Texas Instruments.
The WEBENCH Power Designer provides a customized schematic along with a list of materials with real-time
pricing and component availability.
In most cases, these actions are available:
• Run electrical simulations to see important waveforms and circuit performance
• Run thermal simulations to understand board thermal performance
• Export customized schematic and layout into popular CAD formats
• Print PDF reports for the design, and share the design with colleagues
Get more information about WEBENCH tools at www.ti.com/WEBENCH.
8.2.1.2 Detailed Design Procedure
As seen in (Figure 33), the ICHARGE current flowing through sense resistor RSENSE develops a voltage drop equal
to VSENSE. The voltage at the negative sense point is now less than the positive sense point by an amount
proportional to the VSENSE voltage.
The low-bias currents of the LMV61x cause little voltage drop through R2, so the negative input of the LMV61x
amplifier is at essentially the same potential as the negative sense input.
The LMV61x detects this voltage error between its inputs and servo the transistor base to conduct more current
through Q1, increasing the voltage drop across R1 until the LMV61x inverting input matches the noninverting
input. At this point, the voltage drop across R1 now matches VSENSE.
IG, a current proportional to ICHARGE, flows according to Equation 1.
IG = VRSENSE / R1 = ( RSENSE × ICHARGE ) / R1
(1)
IG also flows through the gain resistor R3 developing a voltage drop equal to Equation 2.
V3 = IG × R3 = ( VRSENSE / R1 ) × R3 = ( ( RSENSE × ICHARGE ) / R2 ) × R3
VOUT = (RSENSE × ICHARGE ) × G
(2)
where
•
G = R3 / R1
(3)
The other channel of the LMV61x may be used to buffer the voltage across R3 to drive the following stages.
8.2.1.2.1 Application Curve
5
VOUT (V)
VOUT (V)
4
3
2
1
1
2
3
4
ILOAD (A)
5
C003
Figure 34. High-Side, Current-Sensing Results
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9 Power Supply Recommendations
For proper operation, the power supplies must be properly decoupled. For decoupling the supply lines, TI
recommends that 10-nF capacitors be placed as close as possible to the op amp power supply pins. For singlesupply, place a capacitor between V+ and V– supply leads. For dual supplies, place one capacitor between V+
and ground, and one capacitor between V– and ground.
10 Layout
10.1 Layout Guidelines
To properly bypass the power supply, several locations on a printed-circuit board must be considered. A
6.8-µF or greater tantalum capacitor must be placed at the point where the power supply for the amplifier is
introduced onto the board. Another 0.1-µF ceramic capacitor must be placed as close as possible to the power
supply pin of the amplifier. If the amplifier is operated in a single power supply, only the V+ pin must be bypassed
with a 0.1-µF capacitor. If the amplifier is operated in a dual power supply, both V+ and V– pins must be
bypassed.
It is good practice to use a ground plane on a printed-circuit board to provide all components with a low inductive
ground connection.
TI recommends surface-mount components in 0805 size or smaller in the LMV611-N application circuits.
Designers can take advantage of the VSSOP miniature sizes to condense board layout to save space and
reduce stray capacitance.
10.2 Layout Example
Figure 35. SOT-23 Layout Example
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11 Device and Documentation Support
11.1 Device Support
11.1.1 Development Support
For development support see the following:
• LMV611 SPICE Model
• LMV612 SPICE Model
• LMV614 SPICE Model
• SPICE-based analog simulation program, TINA-TI
• DIP adapter evaluation module, DIP Adapter EVM
• TI universal operational amplifier evaluation module, Op Amp EVM
• TI software, FilterPro
11.1.1.1 Custom Design With WEBENCH® Tools
Click here to create a custom design using the LMV61x devices with the WEBENCH® Power Designer.
1. Start by entering the input voltage (VIN), output voltage (VOUT), and output current (IOUT) requirements.
2. Optimize the design for key parameters such as efficiency, footprint, and cost using the optimizer dial.
3. Compare the generated design with other possible solutions from Texas Instruments.
The WEBENCH Power Designer provides a customized schematic along with a list of materials with real-time
pricing and component availability.
In most cases, these actions are available:
• Run electrical simulations to see important waveforms and circuit performance
• Run thermal simulations to understand board thermal performance
• Export customized schematic and layout into popular CAD formats
• Print PDF reports for the design, and share the design with colleagues
Get more information about WEBENCH tools at www.ti.com/WEBENCH.
11.2 Documentation Support
11.2.1 Related Documentation
For related documentation see the following:
• Absolute Maximum Ratings for Soldering
• AN-29 IC Op Amp Beats FETs on Input Current
• AN-31 Op Amp Circuit Collection
• AN-71 Micropower Circuits Using the LM4250 Programmable Op Amp
• AN-127 LM143 Monolithic High Voltage Operational Amplifier Applications
11.3 Related Links
The table below lists quick access links. Categories include technical documents, support and community
resources, tools and software, and quick access to sample or buy.
Table 1. Related Links
PARTS
PRODUCT FOLDER
SAMPLE & BUY
TECHNICAL
DOCUMENTS
TOOLS &
SOFTWARE
SUPPORT &
COMMUNITY
LMV611
Click here
Click here
Click here
Click here
Click here
LMV612
Click here
Click here
Click here
Click here
Click here
LMV614
Click here
Click here
Click here
Click here
Click here
Copyright © 2012–2017, Texas Instruments Incorporated
Product Folder Links: LMV611 LMV612 LMV614
Submit Documentation Feedback
23
LMV611, LMV612, LMV614
SNOSC69D – APRIL 2012 – REVISED MARCH 2017
www.ti.com
11.4 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
11.5 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
24
Submit Documentation Feedback
Copyright © 2012–2017, Texas Instruments Incorporated
Product Folder Links: LMV611 LMV612 LMV614
LMV611, LMV612, LMV614
www.ti.com
SNOSC69D – APRIL 2012 – REVISED MARCH 2017
11.6 Trademarks
E2E is a trademark of Texas Instruments.
WEBENCH is a registered trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
11.7 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
11.8 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
Copyright © 2012–2017, Texas Instruments Incorporated
Product Folder Links: LMV611 LMV612 LMV614
Submit Documentation Feedback
25
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
LMV611MF/NOPB
ACTIVE
SOT-23
DBV
5
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
AE9A
LMV611MFX/NOPB
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
AE9A
LMV611MG/NOPB
ACTIVE
SC70
DCK
5
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
AVA
LMV611MGX/NOPB
ACTIVE
SC70
DCK
5
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
AVA
LMV612MA/NOPB
ACTIVE
SOIC
D
8
95
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
LMV6
12MA
LMV612MAX/NOPB
ACTIVE
SOIC
D
8
2500
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
LMV6
12MA
LMV612MM/NOPB
ACTIVE
VSSOP
DGK
8
1000
RoHS & Green
NIPDAUAG | SN
Level-1-260C-UNLIM
-40 to 125
AD9A
LMV612MMX/NOPB
ACTIVE
VSSOP
DGK
8
3500
RoHS & Green
NIPDAUAG | SN
Level-1-260C-UNLIM
-40 to 125
AD9A
LMV614MA/NOPB
ACTIVE
SOIC
D
14
55
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
LMV614MA
LMV614MAX/NOPB
ACTIVE
SOIC
D
14
2500
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
LMV614MA
LMV614MT/NOPB
ACTIVE
TSSOP
PW
14
94
RoHS & Green
NIPDAU | SN
Level-1-260C-UNLIM
-40 to 125
LMV61
4MT
LMV614MTX/NOPB
ACTIVE
TSSOP
PW
14
2500
RoHS & Green
NIPDAU | SN
Level-1-260C-UNLIM
-40 to 125
LMV61
4MT
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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