LMV721
LMV722
www.ti.com
SLOS470C – JUNE 2005 – REVISED SEPTEMBER 2010
10-MHz LOW-NOISE LOW-VOLTAGE LOW-POWER
OPERATIONAL AMPLIFIERS
Check for Samples: LMV721, LMV722
FEATURES
1
•
•
•
•
LMV7210DBV or DCK PACKAGE
(TOP VIEW)
Power-Supply Voltage Range: 2.2 V to 5.5 V
Low Supply Current: 930 mA/Amplifier at 2.2 V
High Unity-Gain Bandwidth: 10 MHz
Rail-to-Rail Output Swing
– 600-Ω Load: 120 mV From Either Rail at
2.2 V
– 2-kΩ Load: 50 mV From Either Rail at 2.2 V
Input Common-Mode Voltage Range Includes
Ground
Input Voltage Noise: 9 nV/√Hz at f = 1 kHz
•
•
OUT
VCC−
IN+
5
VCC+
4
IN−
2
3
LMV7220D, DGK, OR DRG PACKAGE
(TOP VIEW)
1OUT
1IN−
1IN+
VCC−
APPLICATIONS
•
•
•
•
1
Cellular and Cordless Phones
Active Filter and Buffers
Laptops and PDAs
Battery Powered Electronics
1
8
2
7
3
6
4
5
VCC+
2OUT
2IN−
2IN+
DESCRIPTION/ORDERING INFORMATION
The LMV721 (single) and LMV722 (dual) are low-noise low-voltage low-power operational amplifiers that can be
designed into a wide range of applications. The LMV721 and LMV722 have a unity-gain bandwidth of 10 MHz, a
slew rate of 5 V/ms, and a quiescent current of 930 mA/amplifier at 2.2 V.
The LMV721 and LMV722 are designed to provide optimal performance in low-voltage and low-noise systems.
They provide rail-to-rail output swing into heavy loads. The input common-mode voltage range includes ground,
and the maximum input offset voltage are 3.5 mV (over recommended temperature range) for the devices. Their
capacitive load capability is also good at low supply voltages. The operating range is from 2.2 V to 5.5 V.
ORDERING INFORMATION (1)
TA
PACKAGE
Single
(2)
LMV721IDCKR
Reel of 250
LMV721IDCKT
Reel of 3000
LMV721IDBVR
Reel of 2500
LMV722IDR
Tube of 75
LMV722ID
VSSOP – DGK
Reel of 2500
LMV722IDGKR
R6_
QFN – DRG
Reel of 2500
LMV722IDRGR
ZYY
SOIC – D
Dual
(1)
(2)
(3)
TOP-SIDE MARKING (3)
Reel of 3000
SC-70 – DCK
SOT-23 – DBV
–40°C to 105°C
ORDERABLE PART NUMBER
RK_
RBF_
MV722I
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com.
Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.
DBV/DCK/DGK: The actual top-side marking has one additional character that designates the wafer fab/assembly site.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2005–2010, Texas Instruments Incorporated
LMV721
LMV722
SLOS470C – JUNE 2005 – REVISED SEPTEMBER 2010
www.ti.com
Typical Application
R5
VCC
C1
R3
Electret
Microphone
R4
Input
VCC
R1
−
+
Output
C2
R2
Absolute Maximum Ratings (1)
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
(2)
VCC+ – VCC–
Supply voltage
VID
Differential input voltage (3)
6
V
±Supply voltage
V
D package (5)
Package thermal impedance
qJA
(4)
TJ
Operating virtual-junction temperature
Tstg
Storage temperature range
(1)
(2)
(3)
(4)
(5)
(6)
UNIT
97
DBV package (5)
206
DCK package (5)
252
DGK package (5)
172
DRG package (6)
50.7
–65
°C/W
150
°C
150
°C
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltage values (except differential voltages and VCC specified for the measurement of IOS) are with respect to the network GND.
Differential voltages are at IN+ with respect to IN−.
Maximum power dissipation is a function of TJ(max), qJA, and TA. The maximum allowable power dissipation at any allowable ambient
temperature is PD = (TJ(max) – TA)/qJA. Operating at the absolute maximum TJ of 150°C can affect reliability.
The package thermal impedance is calculated in accordance with JESD 51-7.
The package thermal impedance is calculated in accordance with JESD 51-5.
Recommended Operating Conditions
MIN
MAX
UNIT
VCC+ – VCC–
Supply voltage
2.2
5.5
V
TJ
Operating virtual-junction temperature
–40
105
°C
ESD Protection
Human-Body Model
Machine Model
2
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TYP
UNIT
2000
V
100
V
Copyright © 2005–2010, Texas Instruments Incorporated
Product Folder Link(s): LMV721 LMV722
LMV721
LMV722
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SLOS470C – JUNE 2005 – REVISED SEPTEMBER 2010
Electrical Characteristics
VCC+ = 2.2 V, VCC− = GND, VICR = VCC+/2, VO = VCC+/2, and RL > 1 MΩ (unless otherwise noted)
PARAMETER
TEST CONDITIONS
TJ
MIN
25°C
TYP
MAX
0.02
3
UNIT
VIO
Input offset voltage
TCVIO
Input offset voltage average drift
25°C
0.6
mV/°C
IIB
Input bias current
25°C
260
nA
IIO
Input offset current
25°C
25
nA
CMMR
Common-mode rejection ratio
VICR = 0 V to 1.3 V
PSRR
Power-supply rejection ratio
VCC+ = 2.2 V to 5 V,
VO = 0, VICR = 0
VICR
Input common-mode voltage
–40°C to 105°C
CMRR ≥ 50 dB
RL = 600 Ω,
VO = 0.75 V to 2 V
AVD
Large-signal voltage gain
RL = 2 kΩ,
VO = 0.5 V to 2.1 V
RL = 600 Ω to VCC+/2
25°C
70
–40°C to 105°C
64
25°C
80
–40°C to 105°C
70
88
90
RL = 2 kΩ to VCC+/2
25°C
75
–40°C to 105°C
70
25°C
75
–40°C to 105°C
70
25°C
2.090
–40°C to 105°C
2.065
Output current
Sinking, VO = 2.2 V,
VIN(diff) = ±0.5 V
2.125
LMV721
ICC
Supply current
2.150
–40°C to 105°C
2.125
LMV722
(1)
V
2.177
0.056
0.080
0.105
25°C
10
–40°C to 105°C
5
25°C
10
–40°C to 105°C
5
14.9
mA
17.6
0.93
–40°C to 105°C
25°C
0.120
0.145
25°C
25°C
dB
84
0.071
25°C
IO
V
81
–40°C to 105°C
Sourcing, VO = 0 V,
VIN(diff) = ±0.5 V
dB
1.3
–40°C to 105°C
Output swing
dB
–0.3
25°C
25°C
VO
mV
3.5
1.3
1.5
1.81
–40°C to 105°C
mA
2.4
2.6
SR
Slew rate
25°C
4.9
V/ms
GBW
Gain bandwidth product
25°C
10
MHz
Φm
Phase margin
25°C
67.4
°
Gm
Gain margin
25°C
–9.8
dB
Vn
Input-referred voltage noise
f = 1 kHz
25°C
9
nV/√Hz
In
Input-referred current noise
f = 1 kHz
25°C
0.3
pA/√Hz
Total harmonic distortion
f = 1 kHz, AV = 1,
RL = 600 Ω, VO = 500 mVpp
25°C
0.004
THD
(1)
%
Connected as voltage follower with 1-V step input. Number specified is the slower of the positive and negative slew rate.
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SLOS470C – JUNE 2005 – REVISED SEPTEMBER 2010
www.ti.com
Electrical Characteristics
VCC+ = 5 V, VCC− = GND, VICR = VCC+/2, VO = VCC+/2, and RL > 1 MΩ (unless otherwise noted)
PARAMETER
TEST CONDITIONS
TJ
MIN
25°C
TYP
MAX
–0.08
3
UNIT
VIO
Input offset voltage
TCVIO
Input offset voltage average drift
25°C
0.6
mV/°C
IIB
Input bias current
25°C
260
nA
IIO
Input offset current
25°C
25
nA
CMMR
Common-mode rejection ratio
VICR = 0 V to 4.1 V
PSRR
Power-supply rejection ratio
VCC+ = 2.2 V to 5 V,
VO = 0, VICR = 0
VICR
Input common-mode voltage
–40°C to 105°C
CMRR ≥ 50 dB
RL = 600 Ω,
VO = 0.75 V to 4.8 V
AVD
Large-signal voltage gain
RL = 2 kΩ,
VO = 0.7 V to 4.9 V
RL = 600 Ω to VCC+/2
3.5
25°C
80
–40°C to 105°C
75
25°C
70
–40°C to 105°C
64
90
RL = 2 kΩ to VCC+/2
25°C
80
–40°C to 105°C
70
25°C
80
–40°C to 105°C
70
25°C
4.84
–40°C to 105°C
4.815
Output current
Sinking, VO = 2.2 V,
VIN(diff) = ±0.5 V
4.882
LMV721
ICC
Supply current
4.93
–40°C to 105°C
4.905
4.952
0.076
LMV722
(1)
V
0.11
0.135
25°C
20
–40°C to 105°C
12
25°C
15
–40°C to 105°C
8.5
52.6
mA
23.7
1.03
–40°C to 105°C
25°C
0.19
0.215
25°C
25°C
dB
94
0.134
25°C
IO
V
87
–40°C to 105°C
Sourcing, VO = 0 V,
VIN(diff) = ±0.5 V
dB
4.1
–40°C to 105°C
Output swing
dB
–0.3
25°C
25°C
VO
89
mV
1.4
1.7
2.01
–40°C to 105°C
2.4
mA
2.8
SR
Slew rate
25°C
5.25
V/ms
GBW
Gain bandwidth product
25°C
10
MHz
Φm
Phase margin
25°C
72
°
Gm
Gain margin
25°C
–11
dB
Vn
Input-referred voltage noise
f = 1 kHz
25°C
8.5
nV/√Hz
In
Input-referred current noise
f = 1 kHz
25°C
0.2
pA/√Hz
Total harmonic distortion
f = 1 kHz, AV = 1,
RL = 600 Ω, VO = 500 mVpp
25°C
0.001
THD
(1)
4
%
Connected as voltage follower with 1-V step input. Number specified is the slower of the positive and negative slew rate.
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Copyright © 2005–2010, Texas Instruments Incorporated
Product Folder Link(s): LMV721 LMV722
LMV721
LMV722
www.ti.com
SLOS470C – JUNE 2005 – REVISED SEPTEMBER 2010
TYPICAL CHARACTERISTICS
SUPPLY CURRENT
vs
SUPPLY VOLTAGE
SOURCING CURRENT
vs
OUTPUT VOLTAGE
100
1.4
VCC = 2.2 V
TA = 125°C
TA = 85°C
Isource – Sourcing Current – mA
1.3
ICC – Supply Current – mA
1.2
1.1
1
0.9
TA = 25°C
0.8
TA = –40°C
0.7
0.6
10
1
0.5
0.1
0.001
0.4
2
2.5
3
3.5
4
4.5
5
5.5
6
0.01
1
10
Output Voltage Referenced to VCC – V
VCC – Supply Voltage – V
SOURCING CURRENT
vs
OUTPUT VOLTAGE
SINKING CURRENT
vs
OUTPUT VOLTAGE
100
100
VCC = 5 V
VCC = 2.2 V
Isink – Sinking Current – mA
Isource – Sourcing Current – mA
0.1
10
1
0.1
0.001
0.01
0.1
1
Output Voltage Referenced to VCC – V
10
10
1
0.1
0.001
0.01
0.1
1
10
Output Voltage Referenced to VCC – V
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5
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LMV722
SLOS470C – JUNE 2005 – REVISED SEPTEMBER 2010
www.ti.com
TYPICAL CHARACTERISTICS (continued)
SINKING CURRENT
vs
OUTPUT VOLTAGE
OUTPUT VOLTAGE SWING
vs
SUPPLY VOLTAGE
100
0.3
VIO – Input Offset Voltage – mV
Isink – Sinking Current – mA
VCC = 5 V
10
1
0.1
0.001
0.2
0.1
0
-0.1
-0.2
-0.3
0.01
0.1
1
2
10
2.5
3
INPUT OFFSET VOLTAGE
vs
INPUT COMMON-MODE VOLTAGE
4.5
5
INPUT OFFSET VOLTAGE
vs
INPUT COMMON-MODE VOLTAGE
0.3
0.3
VCC = 2.2 V
VCC = 5 V
0.2
VIO – Input Offset Voltage – mV
VIO – Input Offset Voltage – mV
4
VCC – Supply Voltage – V
Output Voltage Referenced to VCC – V
0.1
0
-0.1
-0.2
-0.3
0.2
0.1
0
-0.1
-0.2
-0.3
0
0.3
0.6
0.9
1.2
VICR – Input Common-Mode Voltage – V
6
3.5
1.5
0
0.5
1
1.5
2
2.5
3
3.5
4
VICR – Input Common-Mode Voltage – V
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Product Folder Link(s): LMV721 LMV722
LMV721
LMV722
www.ti.com
SLOS470C – JUNE 2005 – REVISED SEPTEMBER 2010
TYPICAL CHARACTERISTICS (continued)
INPUT VOLTAGE
vs
OUTPUT VOLTAGE
INPUT VOLTAGE
vs
OUTPUT VOLTAGE
0.3
0.3
VCC = 5 V
VCC = 2.2 V
Input Differential Voltage – mV
Input Differential Voltage – mV
0.2
0.1
0
-0.1
-0.2
0.2
0.1
0
-0.1
-0.2
-0.3
-0.3
0
0.5
1
1.5
2
0
2.5
0.5
INPUT VOLTAGE NOISE
vs
FREQUENCY
2
2.5
3
3.5
4
4.5
5
INPUT CURRENT NOISE
vs
FREQUENCY
100
Input Current Noise – pA/ √Hz
Hz
100
Input Voltage Noise – µV/ √Hz
Hz
1.5
Output Voltage – V
Output Voltage – V
10
1
10
1.E+01
1
100
1.E+02
1.E+03
1k
1.E+04
10k
1.E+05
100k
10
1
0.1
10
1.E+01
100
1.E+02
1k
1.E+03
10k
1.E+04
f – Frequency – Hz
f – Frequency – Hz
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TYPICAL CHARACTERISTICS (continued)
PSRR
vs
FREQUENCY
PSRR
vs
FREQUENCY
120
120
VCC = 5 V
100
100
80
80
PSRR – dB
60
60
40
40
20
20
0
1.E+02
100
1.E+03
1k
1.E+04
10k
1.E+05
100k
1.E+06
1M
0
1.E+02
100
1.E+07
10M
1.E+03
1k
1.E+04
10k
1.E+05
100k
f – Frequency – Hz
f – Frequency – Hz
GAIN AND PHASE
vs
FREQUENCY
GAIN AND PHASE
vs
FREQUENCY
80
80
130
VCC = 5 V
115
70
100
60
50
85
50
40
70
30
55
20
40
10
115
Phase
100
85
Gain
40
70
30
55
20
40
25
10
25
0
10
0
10
-10
-5
-10
-5
Gain – dB
Gain – dB
8
Gain
Phase – deg
Phase
60
1.E+07
10M
130
VCC = 2.2 V
70
1.E+06
1M
-20
-20
10k
100k 1.E+06
10M
100M
1k
1M
1.E+03
1.E+04
1.E+05
1.E+07
1.E+08
-20
-20
10k
100k
10M
100M
1k
1M
1.E+03
1.E+04
1.E+05
1.E+06
1.E+07
1.E+08
f – Frequency – Hz
f – Frequency – Hz
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Phase – deg
PSRR – dB
VCC = 2.2 V
Copyright © 2005–2010, Texas Instruments Incorporated
Product Folder Link(s): LMV721 LMV722
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LMV722
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SLOS470C – JUNE 2005 – REVISED SEPTEMBER 2010
TYPICAL CHARACTERISTICS (continued)
SLEW RATE
vs
SUPPLY VOLTAGE
THD
vs
FREQUENCY
6
1
VCC = 2.2 V
5.8
5.6
5.2
THD – %
SR – Slew Rate – V/µs
0.1
5.4
5
Rising
0.01
4.8
4.6
0.001
4.4
Falling
4.2
4
2
2.5
3
3.5
4
4.5
5
0.0001
100
1000
1k
10000
10k
100000
100k
f – Frequency – Hz
VCC – Supply Voltage – V
PULSE RESPONSE
PULSE RESPONSE
VCCR=L 5= V,
RL = C
2 Lk=Ω21.2
, CL =nF,
21.2
RO ©
= 2.1 Ω
2 k©,
ROnF,
= 2.1
0.25 V per Division
0.25 V per Division
nF, RnF,
0O©= 0 Ω
VCC =R5
V,2Rk©,
kLΩ=, 21.2
CL = 21.2
L=
O =R
L = 2C
2 µs per Division
2 µs per Division
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TYPICAL CHARACTERISTICS (continued)
PULSE RESPONSE
PULSE RESPONSE
10Rk©,
C = 21.2 nF, R = 0 ©
VCCR=L 5= V,
L = 10 LkΩ, CL = 21.2OnF, RO = 0 Ω
0.25 V per Division
0.25 V per Division
= V,
2 k©,
ROnF,
= 9.5
VCCR=L 5
RL = C
2Lk=Ω21.2
, CL =nF,
21.2
RO ©
= 9.5 Ω
2 µs per Division
2 µs per Division
PULSE RESPONSE
PULSE RESPONSE
2R
©,
C2L =
ROnF,
= 0R©
VCC = R
2.2
Ω2.12
, CL =nF,
2.12
L =V,
L =
O = 0 Ω
0.25 V per Division
250 mV per Division
= V,
600
CL =Ω21.2
ROnF,
= 0R©O = 0 Ω
VCCR=L 5
RL©,
= 600
, CL =nF,
21.2
1 µs per Division
2 µs per Division
PULSE RESPONSE
PULSE RESPONSE
10Rk©,
C k=
ROnF,
= 0R©
VCC = R2.2
Ω,2.12
CL =nF,
2.12
L =V,
L = 10 L
O = 0 Ω
250 mV per Division
250 mV per Division
RL =V,2Rk©,
CLΩ=, 2.12
nF, RnF,
0O©= 0 Ω
VCC = 2.2
CL = 2.12
O =R
L = 2 k
1 µs per Division
1 µs per Division
10
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SLOS470C – JUNE 2005 – REVISED SEPTEMBER 2010
TYPICAL CHARACTERISTICS (continued)
PULSE RESPONSE
PULSE RESPONSE
VCC = R
2.2
= 10Ck
CL =nF,
2.12ROnF,
RO = ©
11.5 Ω
10RLk©,
= ,2.12
= 11.5
L =V,
LΩ
250 mV per Division
250 mV per Division
RL V,
= 10
k©,
2.12
nF, R
VCC = 2.2
RL =
10 C
kΩ
,C
nF,
2.2 Ω
L=
O =R2.2
L = 2.12
O =©
1 µs per Division
1 µs per Division
PULSE RESPONSE
250 mV per Division
600
CL =
ROnF,
= 0R©
VCC = R
2.2
RL ©,
= 600
Ω1.89
, CL =nF,
1.89
L =V,
O = 0 Ω
1 µs per Division
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REVISION HISTORY
Changes from Revision B (August 2010) to Revision C
Page
•
Changed all temperature parameters from max of 85°C to 105°C ...................................................................................... 1
•
Changed supply voltage max value to 6 in Absolute Maximum Ratings table ..................................................................... 2
•
Changed supply voltage MAX value to 5.5 in Recommended Operating Conditions table ................................................. 2
•
Changed AVD, VO test conditons for RL = 600 Ω: 0.75 V to 4.8 V ........................................................................................ 4
•
Changed AVD, VO test conditons for RL = 2 kΩ Ω: 0.75 V to 4.8 V ....................................................................................... 4
12
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PACKAGE OPTION ADDENDUM
www.ti.com
6-Feb-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
LMV721IDBVR
ACTIVE
SOT-23
DBV
5
3000
Green (RoHS
& no Sb/Br)
NIPDAU
Level-1-260C-UNLIM
-40 to 105
(RBFA, RBFM)
LMV721IDCKR
ACTIVE
SC70
DCK
5
3000
Green (RoHS
& no Sb/Br)
NIPDAU | NIPDAUAG
Level-1-260C-UNLIM
-40 to 105
(RKA, RKM)
LMV721IDCKT
ACTIVE
SC70
DCK
5
250
Green (RoHS
& no Sb/Br)
NIPDAU | NIPDAUAG
Level-1-260C-UNLIM
-40 to 105
(RKA, RKM)
LMV722ID
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
NIPDAU
Level-1-260C-UNLIM
-40 to 105
MV722I
LMV722IDGKR
ACTIVE
VSSOP
DGK
8
2500
Green (RoHS
& no Sb/Br)
NIPDAU
Level-1-260C-UNLIM
-40 to 105
R6E
LMV722IDGKRG4
ACTIVE
VSSOP
DGK
8
2500
Green (RoHS
& no Sb/Br)
NIPDAU
Level-1-260C-UNLIM
-40 to 105
R6E
LMV722IDR
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
NIPDAU
Level-1-260C-UNLIM
-40 to 105
MV722I
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of