LP38841
www.ti.com
SNVS289C – DECEMBER 2004 – REVISED APRIL 2013
LP38841 0.8A Ultra Low Dropout Linear Regulators
Stable with Ceramic Output Capacitors
Check for Samples: LP38841
FEATURES
DESCRIPTION
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The LP38841 is a high current, fast response
regulator which can maintain output voltage
regulation with minimum input to output voltage drop.
Fabricated on a CMOS process, the device operates
from two input voltages: Vbias provides voltage to
drive the gate of the N-MOS power transistor, while
Vin is the input voltage which supplies power to the
load. The use of an external bias rail allows the part
to operate from ultra low Vin voltages. Unlike bipolar
regulators, the CMOS architecture consumes
extremely low quiescent current at any output load
current. The use of an N-MOS power transistor
results in wide bandwidth, yet minimum external
capacitance is required to maintain loop stability.
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Ideal for Conversion from 1.8V or 1.5V Inputs
Designed for Use with low ESR Ceramic
Capacitors
0.8V, 1.2V and 1.5V Standard Voltages
Available
Ultra Low Dropout Voltage (75mV at 0.8A typ)
1.5% Initial Output Accuracy
Load Regulation of 0.1%/A (typical)
30nA Quiescent Current in Shutdown (typical)
Low Ground Pin Current at all Loads
Over Temperature/over Current Protection
Available in 5 Lead TO-220 and DDPAK/TO-263
Packages
−40°C to +125°C Junction Temperature Range
APPLICATIONS
The fast transient response of these devices makes
them suitable for use in powering DSP,
Microcontroller Core voltages and Switch Mode
Power Supply post regulators. The parts are available
in TO-220 and DDPAK/TO-263 packages.
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Dropout Voltage: 75 mV (typ) at 0.8A load current.
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ASIC Power Supplies In:
– Desktops, Notebooks, and Graphics Cards,
Servers
– Gaming Set Top Boxes, Printers and
Copiers
Server Core and I/O Supplies
DSP and FPGA Power Supplies
SMPS Post-Regulator
Quiescent Current: 30 mA (typ) at full load.
Shutdown Current: 30 nA (typ) when S/D pin is low.
Precision Output Voltage: 1.5% room temperature
accuracy.
TYPICAL APPLICATION CIRCUIT
LP38841
IN
IN
BIAS
5V ± 10%
4.7 PF*
BIAS
0.1 PF
OUT
OUT
10 PF
Ceramic
S/D
S/D
GND
GND
GND
* Minimum value required if Tantalum capacitor is used (see Application Hints).
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Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2004–2013, Texas Instruments Incorporated
LP38841
SNVS289C – DECEMBER 2004 – REVISED APRIL 2013
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
CONNECTION DIAGRAM
Figure 1. TO-220, Top View
Figure 2. DDPAK/TO-263, Top View
PIN DESCRIPTIONS
Pin Name
BIAS
OUTPUT
GND
Description
The bias pin is used to provide the low current bias voltage to the chip which operates the internal circuitry and
provides drive voltage for the N-FET.
The regulated output voltage is connected to this pin.
This is both the power and analog ground for the IC. Note that both pin three and the tab of the TO-220 and
DDPAK/TO-263 packages are at ground potential. Pin three and the tab should be tied together using the PC board
copper trace material and connected to circuit ground.
INPUT
The high current input voltage which is regulated down to the nominal output voltage must be connected to this pin.
Because the bias voltage to operate the chip is provided separately, the input voltage can be as low as a few hundred
millivolts above the output voltage.
SHUTDOWN
This provides a low power shutdown function which turns the regulated output OFF. Tie to VBIAS if this function is not
used.
BLOCK DIAGRAM
2
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Copyright © 2004–2013, Texas Instruments Incorporated
Product Folder Links: LP38841
LP38841
www.ti.com
SNVS289C – DECEMBER 2004 – REVISED APRIL 2013
ABSOLUTE MAXIMUM RATINGS
(1)
If Military/Aerospace specified devices are required, contact the Texas Instruments Semiconductor Sales Office/
Distributors for availability and specifications.
−65°C to +150°C
Storage Temperature Range
Lead Temp. (Soldering, 5 seconds)
ESD Rating
Human Body Model
Machine Model (3)
Power Dissipation
260°C
(2)
2 kV
200V
(4)
Internally Limited
VIN Supply Voltage (Survival)
−0.3V to +6V
VBIAS Supply Voltage (Survival)
−0.3V to +7V
Shutdown Input Voltage (Survival)
−0.3V to +7V
IOUT (Survival)
Internally Limited
−0.3V to +6V
Output Voltage (Survival)
−40°C to +150°C
Junction Temperature
(1)
(2)
(3)
(4)
Absolute maximum ratings indicate limits beyond which damage to the component may occur. Operating ratings indicate conditions for
which the device is intended to be functional, but do not ensure specific performance limits. For ensured specifications, see Electrical
Characteristics. Specifications do not apply when operating the device outside of its rated operating conditions.
The human body model is a 100 pF capacitor discharged through a 1.5k resistor into each pin.
The machine model is a 220 pF capacitor discharged directly into each pin.
At elevated temperatures, device power dissipation must be derated based on package thermal resistance and heatsink thermal values.
θJ-A for TO-220 devices is 65°C/W if no heatsink is used. If the TO-220 device is attached to a heatsink, a θJ-S value of 4°C/W can be
assumed. θJ-A for DDPAK/TO-263 devices is approximately 35°C/W if soldered down to a copper plane which is at least 1 square inch in
area. If power dissipation causes the junction temperature to exceed specified limits, the device will go into thermal shutdown.
RECOMMENDED OPERATING CONDITIONS
VIN Supply Voltage
(VOUT + VDO) to 5.5V
Shutdown Input Voltage
0 to +5.5V
IOUT
0.8A
−40°C to +125°C
Operating Junction Temperature Range
VBIAS Supply Voltage
4.5V to 5.5V
VOUT
0.8V to 1.5V
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Copyright © 2004–2013, Texas Instruments Incorporated
Product Folder Links: LP38841
3
LP38841
SNVS289C – DECEMBER 2004 – REVISED APRIL 2013
www.ti.com
ELECTRICAL CHARACTERISTICS
Limits in standard typeface are for TJ = 25°C, and limits in boldface type apply over the full operating temperature range.
Unless otherwise specified: VIN = VO(NOM) + 1V, VBIAS = 4.5V, IL = 10 mA, CIN = 10 µF CER, COUT = 22 µF CER, CBIAS = 1
µF CER, VS/D = VBIAS. Min/Max limits are specified through testing, statistical correlation, or design. (1)
Symbol
VO
Parameter
Conditions
Output Voltage Tolerance
10 mA < IL < 0.8A
VO(NOM) + 1V ≤ VIN ≤ 5.5V
4.5V ≤ VBIAS ≤ 5.5V
(3)
ΔVO/ΔVIN
Output Voltage Line Regulation
ΔVO/ΔIL
Output Voltage Load Regulation
VDO
Dropout Voltage
IQ(VIN)
Quiescent Current Drawn from VIN
Supply
(4)
(5)
Min
ISC
Quiescent Current Drawn from VBIAS
Supply
Short-Circuit Current
Max
0.8
0.812
0.824
1.182
1.164
1.2
1.218
1.236
1.478
1.455
1.5
1.523
1.545
0.01
Units
V
%/V
0.1
0.4
1.3
%/A
IL = 0.8A
75
120
205
mV
10 mA < IL < 0.8A
30
35
40
mA
0.06
1
30
µA
2
4
6
mA
VS/D ≤ 0.3V
0.03
1
30
µA
VOUT = 0V
2.6
VS/D ≤ 0.3V
IQ(VBIAS)
(2)
0.788
0.776
VO(NOM) + 1V ≤ VIN ≤ 5.5V
10 mA < IL < 0.8A
Typ
10 mA < IL < 0.8A
A
Shutdown Input
VSDT
Output Turn-off Threshold
Output = ON
Output = OFF
0.7
0.3
0.7
Td (OFF)
Turn-OFF Delay
RLOAD X COUT
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