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LP5907
ZHCSD40N – APRIL 2012 – REVISED APRIL 2018
LP5907 250mA 超低噪声、低 IQ LDO
1 特性
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1
3 说明
输入电压范围：2.2V 至 5.5V
输出电压范围：1.2V 至 4.5V
与 1µF 陶瓷输入和输出电容搭配使用，性能稳定
无需噪声旁路电容
支持输出电容远端布置
热过载保护和短路保护
运行结温范围：-40°C 至 125°C
低输出电压噪声：< 6.5µVRMS
电源抑制比 (PSRR)：1kHz 频率时为 82dB
输出电压容差：±2%
极低 IQ（启用）：12µA
低压降：120mV（典型值）
使用 LP5907 并借助 WEBENCH® 电源设计器创建
定制设计方案
LP5907 是一款能提供高达 250mA 输出电流的低噪声
LDO。此器件专门针对射频和模拟电路而设计，可满
足其低噪声、高 PSRR、低静态电流以及低线路或负
载瞬态响应系数等诸多要求。LP5907 采用创新的设计
技术，无需噪声旁路电容便可提供出色的噪声性能，并
且支持远距离安置输出电容。
此器件可与 1µF 输入和 1µF 输出陶瓷电容搭配使用
（无需独立的噪声旁路电容）。
其固定输出电压介于 1.2V 至 4.5V 之间（阶跃为
25mV）。如需特定的电压选项，请联系德州仪器 (TI)
销售代表。
器件信息(1)
器件型号
2 应用
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LP5907
移动电话、平板电脑
数码相机和音频设备
便携式和电池供电类设备
便携式医疗设备
智能仪表和现场变送器
RF、PLL、VCO 和时钟电源
IP 摄像机
无人机
封装
封装尺寸
DSBGA (4)
0.675mm x 0.675mm（最大
值）
SOT-23 (5)
2.90mm x 1.60mm（标称值）
X2SON (4)
1.00mm x 1.00mm（标称值）
(1) 如需了解所有可用封装，请参阅数据表末尾的可订购产品附
录。
空白
空白
空白
简化原理图
INPUT
IN
1 PF
ENABLE
OUT
LP5907
OUTPUT
1 PF
EN
GND
GND
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
English Data Sheet: SNVS798
LP5907
ZHCSD40N – APRIL 2012 – REVISED APRIL 2018
www.ti.com.cn
目录
1
2
3
4
5
6
7
特性 ..........................................................................
应用 ..........................................................................
说明 ..........................................................................
修订历史记录 ...........................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
4
5
6.1
6.2
6.3
6.4
6.5
6.6
6.7
5
5
5
6
6
7
8
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Output and Input Capacitors .....................................
Typical Characteristics ..............................................
Detailed Description ............................................ 12
7.1 Overview ................................................................. 12
7.2 Functional Block Diagram ....................................... 12
7.3 Feature Description................................................. 12
7.4 Device Functional Modes........................................ 13
8
Application and Implementation ........................ 14
8.1 Application Information............................................ 14
8.2 Typical Application .................................................. 14
9 Power Supply Recommendations...................... 17
10 Layout................................................................... 18
10.1 Layout Guidelines ................................................. 18
10.2 Layout Examples................................................... 18
11 器件和文档支持 ..................................................... 20
11.1
11.2
11.3
11.4
11.5
11.6
文档支持................................................................
接收文档更新通知 .................................................
社区资源................................................................
商标 .......................................................................
静电放电警告.........................................................
术语表 ...................................................................
20
20
20
20
20
20
12 机械、封装和可订购信息 ....................................... 20
4 修订历史记录
注：之前版本的页码可能与当前版本有所不同。
Changes from Revision M (January 2018) to Revision N
•
Page
Added Overshoot on start-up with EN row to Electrical Characteristics table ...................................................................... 7
Changes from Revision L (August 2016) to Revision M
Page
•
已添加 WEBENCH 的链接...................................................................................................................................................... 1
•
已添加 关于 YKM 封装选项的信息.......................................................................................................................................... 1
•
已添加 细微的编辑性更改 ....................................................................................................................................................... 1
Changes from Revision K (May 2016) to Revision L
Page
•
已更改 更改了数据表标题，更新了应用 列表以及“说明”部分第一句的措辞 ............................................................................ 1
•
已更改 “10µVRMS”改为“6.5µVRMS” ........................................................................................................................................... 1
Changes from Revision J (March 2016) to Revision K
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已更改 标题和“说明”部分第一句中的“线性稳压器”改为 “LDO” ................................................................................................ 1
Changes from Revision I (August 2015) to Revision J
•
Page
Page
Changed VOUT min and max values and VEN min value in Abs Max table and VEN row of ROC table to correct format
errors; replace text of footnote 2 of Abs Max table ............................................................................................................... 5
Changes from Revision H (November 2014) to Revision I
Page
•
已添加 顶部导航增加了参考设计图标，并将“ΔVOUT 与温度间的关系”图添加到了了典型特性 ................................................ 1
•
Changed Storage Temperature to Abs Max table; replace Handling Ratings with ESD Ratings ......................................... 5
•
Deleted "VOUT ≥ 1.8 V" from first row of ΔVout spec ............................................................................................................. 6
2
版权 © 2012–2018, Texas Instruments Incorporated
LP5907
www.ti.com.cn
•
Added "SOT-23, X2SON packages" to second row of ΔVout spec ...................................................................................... 6
Changes from Revision G (October 2013) to Revision H
•
ZHCSD40N – APRIL 2012 – REVISED APRIL 2018
Page
已添加 器件信息 表和处理额定值 表，特性 描述、器件功能模式、应用和实施、电源相关建议、布局、器件和文档支
持以及机械、封装和可订购信息 部分；已将一些曲线移至应用曲线 部分。........................................................................... 1
Copyright © 2012–2018, Texas Instruments Incorporated
3
LP5907
ZHCSD40N – APRIL 2012 – REVISED APRIL 2018
www.ti.com.cn
5 Pin Configuration and Functions
YKE and YKM Packages
4-Pin DSBGA
IN
A1
OUT
A2
OUT
A2
IN
A1
B1
EN
B2
GND
B2
GND
B1
EN
TOP VIEW
BOTTOM VIEW
Pin Functions: DSBGA
PIN
DSBGA
NUMBER
I/O
NAME
DESCRIPTION
A1
IN
I
Input voltage supply. Connect a 1-µF capacitor at this input.
A2
OUT
O
Regulated output voltage. Connect a minimum 1-µF low-ESR capacitor to this pin. Connect
this output to the load circuit. An internal 230-Ω (typical) pulldown resistor prevents a charge
remaining on VOUT when the regulator is in the shutdown mode (VEN low).
B1
EN
I
Enable input. A low voltage (< VIL) on this pin turns the regulator off and discharges the
output pin to GND through an internal 230-Ω pulldown resistor. A high voltage (> VIH) on this
pin enables the regulator output. This pin has an internal 1-MΩ pulldown resistor to hold the
regulator off by default.
B2
GND
—
Common ground
DQN Package
4-Pin X2SON
Bottom View
DBV Package
5-Pin SOT-23
Top View
OUT GND
1
2
5
4
3
IN
EN
IN
1
GND
2
EN
3
5 OUT
4 N/C
Pin Functions: X2SON, SOT-23
PIN
NAME
X2SON
NUMBER
SOT-23
NUMBER
I/O
IN
4
1
I
Input voltage supply. Connect a 1-µF capacitor at this input.
O
Regulated output voltage. Connect a minimum 1-µF low-ESR capacitor to this
pin. Connect this output to the load circuit. An internal 230-Ω (typical) pulldown
resistor prevents a charge remaining on VOUT when the regulator is in the
shutdown mode (VEN low).
Enable input. A low voltage (< VIL) on this pin turns the regulator off and
discharges the output pin to GND through an internal 230-Ω pulldown resistor. A
high voltage (> VIH) on this pin enables the regulator output. This pin has an
internal 1-MΩ pulldown resistor to hold the regulator off by default.
OUT
4
1
5
DESCRIPTION
EN
3
3
I
GND
2
2
—
Common ground
N/C
—
4
—
No internal electrical connection.
Thermal Pad
5
—
—
Thermal pad for X2SON package, connect to GND or leave floating. Do not
connect to any potential other than GND.
Copyright © 2012–2018, Texas Instruments Incorporated
LP5907
www.ti.com.cn
ZHCSD40N – APRIL 2012 – REVISED APRIL 2018
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1) (2)
MIN
MAX
VIN
Input voltage
–0.3
6
VOUT
Output voltage
–0.3
See (3)
VEN
Enable input voltage
–0.3
6
Continuous power dissipation (4)
TJMAX
Junction temperature
Tstg
Storage temperature
(1)
(2)
(3)
(4)
Internally Limited
–65
UNIT
V
W
150
°C
150
°C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltages are with respect to the GND pin.
Abs Max VOUT is the lessor of VIN + 0.3 V, or 6 V.
Internal thermal shutdown circuitry protects the device from permanent damage.
6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001
Electrostatic discharge
(1)
UNIT
±2000
Charged-device model (CDM), per JEDEC specification JESD22-C101 (2)
V
±1000
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted) (1) (2)
MIN
MAX
VIN
Input supply voltage
2.2
5.5
VEN
Enable input voltage
0
5.5
IOUT
Output current
TJ
Junction temperature
TA
(1)
(2)
(3)
Ambient temperature
(3)
UNIT
V
0
250
mA
–40
125
°C
–40
85
°C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltages are with respect to the GND pin.
In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may
have to be derated. Maximum ambient temperature (TA-MAX) is dependent on the maximum operating junction temperature (TJ-MAX-OP =
125°C), the maximum power dissipation of the device in the application (PD-MAX), and the junction-to ambient thermal resistance of the
part/package in the application (RθJA), as given by the following equation: TA-MAX = TJ-MAX-OP – (RθJA × PD-MAX). See Application and
Implementation.
Copyright © 2012–2018, Texas Instruments Incorporated
5
LP5907
ZHCSD40N – APRIL 2012 – REVISED APRIL 2018
www.ti.com.cn
6.4 Thermal Information
LP5907
THERMAL METRIC
(1)
DBV
(SOT-23)
DQN
(X2SON)
YKE
(DSBGA)
YKM
(DSBGA)
5 PINS
4 PINS
4 PINS
4 PINS
UNIT
RθJA
Junction-to-ambient thermal resistance
193.4
216.1
206.1
194.1
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
102.1
161.7
1.5
3.0
°C/W
RθJB
Junction-to-board thermal resistance
45.8
162.1
37.0
62.7
°C/W
ψJT
Junction-to-top characterization parameter
8.4
5.1
15.0
1.1
°C/W
ψJB
Junction-to-board characterization parameter
45.3
161.7
36.8
62.7
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
n/a
123.0
n/a
n/a
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6.5 Electrical Characteristics
VIN = VOUT(NOM) + 1 V, VEN = 1.2 V, IOUT = 1 mA, CIN = 1 µF, COUT = 1 µF (unless otherwise noted) (1) (2) (3)
PARAMETER
VIN
Input voltage
Output voltage tolerance
ΔVOUT
ILOAD
TEST CONDITIONS
MIN
2.2
5.5
VIN = (VOUT(NOM) + 1 V) to 5.5 V,
IOUT = 1 mA to 250 mA
–2
2
VIN = (VOUT(NOM) + 1 V) to 5.5 V,
IOUT = 1 mA to 250 mA
(VOUT < 1.8 V, SOT-23, X2SON packages)
–3
3
Line regulation
VIN = (VOUT(NOM) + 1 V) to 5.5 V,
IOUT = 1 mA
Load regulation
IOUT = 1 mA to 250 mA
Load current
See (4)
IG
VDO
Ground current (6)
Dropout voltage (7)
0.02
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
6
Short-circuit current limit
V
%/V
0.001
0
%/mA
250
mA
250
12
25
VEN = 1.2 V, IOUT = 250 mA
250
425
VEN = 0.3 V (disabled)
0.2
1
VEN = 1.2 V, IOUT = 0 mA
14
IOUT = 100 mA
50
IOUT = 250 mA (DSBGA package)
120
IOUT = 250 mA (SOT-23, X2SON packages)
ISC
UNIT
%VOUT
Maximum output current
Quiescent current (5)
MAX
TA = 25°C
VEN = 1.2 V, IOUT = 0 mA
IQ
TYP
TA = 25°C (8)
µA
µA
200
mV
250
250
500
mA
All voltages are with respect to the device GND terminal, unless otherwise stated.
Minimum and maximum limits are ensured through test, design, or statistical correlation over the junction temperature (TJ) range of
–40°C to 125°C, unless otherwise stated. Typical values represent the most likely parametric norm at TA = 25°C, and are provided for
reference purposes only.
In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may
have to be derated. Maximum ambient temperature (TA-MAX) is dependent on the maximum operating junction temperature (TJ-MAX-OP =
125°C), the maximum power dissipation of the device in the application (PD-MAX), and the junction-to ambient thermal resistance of the
part/package in the application RθJA), as given by the following equation: TA-MAX = TJ-MAX-OP – (RθJA × PD-MAX). See Application and
Implementation.
The device maintains a stable, regulated output voltage without a load current.
Quiescent current is defined here as the difference in current between the input voltage source and the load at VOUT.
Ground current is defined here as the total current flowing to ground as a result of all input voltages applied to the device.
Dropout voltage is the voltage difference between the input and the output at which the output voltage drops to 100 mV below its
nominal value.
Short-circuit current (ISC) for the LP5907 is equivalent to current limit. To minimize thermal effects during testing, ISC is measured with
VOUT pulled to 100 mV below its nominal voltage.
Copyright © 2012–2018, Texas Instruments Incorporated
LP5907
www.ti.com.cn
ZHCSD40N – APRIL 2012 – REVISED APRIL 2018
Electrical Characteristics (continued)
VIN = VOUT(NOM) + 1 V, VEN = 1.2 V, IOUT = 1 mA, CIN = 1 µF, COUT = 1 µF (unless otherwise noted)(1)(2)(3)
PARAMETER
PSRR
TEST CONDITIONS
Power-supply rejection ratio (9)
MIN
TYP
f = 100 Hz, IOUT = 20 mA
90
f = 1 kHz, IOUT = 20 mA
82
f = 10 kHz, IOUT = 20 mA
65
f = 100 kHz, IOUT = 20 mA
UNIT
dB
60
IOUT = 1 mA
10
IOUT = 250 mA
6.5
eN
Output noise voltage (9)
BW = 10 Hz to 100 kHz
RAD
Output automatic discharge
pulldown resistance
VEN < VIL (output disabled)
230
Thermal shutdown
TJ rising
160
Thermal hysteresis
TJ falling from shutdown
TSD
MAX
µVRMS
Ω
°C
15
LOGIC INPUT THRESHOLDS
VIL
Low input threshold
VIN = 2.2 V to 5.5 V,
VEN falling until the output is disabled
VIH
High input threshold
VIN = 2.2 V to 5.5 V
VEN rising until the output is enabled
IEN
Input current at EN pin (10)
0.4
1.2
VEN = 5.5 V and VIN = 5.5 V
V
5.5
VEN = 0 V and VIN = 5.5 V
V
µA
0.001
TRANSIENT CHARACTERISTICS
Line transient
ΔVOUT
–1
VIN = (VOUT(NOM) + 1.6 V) to
(VOUT(NOM) + 1.6 V) in 30 µs
IOUT = 1 mA to 250 mA in 10 µs
Load transient (9)
Overshoot on start-up
tON
VIN = (VOUT(NOM) + 1 V) to
(VOUT(NOM) + 1.6 V) in 30 µs
(9)
1
–40
IOUT = 250 mA to 1 mA in 10 µs
(9)
mV
40
Stated as a percentage of VOUT(NOM)
5%
Overshoot on start-up with EN (9)
Stated as a percentage of VOUT(NOM), VIN =
VOUT + 1 V to 5.5 V, 0.7 µF < COUT < 10 µF,
0 mA < IOUT < 250 mA, EN rising until the
output is enabled
1%
Turnon time
From VEN > VIH to VOUT = 95% of VOUT(NOM),
TA = 25°C
80
150
µs
(9) This specification is verified by design.
(10) There is a 1-MΩ resistor between EN and ground on the device.
6.6 Output and Input Capacitors
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
(2)
CIN
Input capacitance
COUT
Output capacitance (2)
ESR
Output/Input capacitance (2)
(1)
(2)
Capacitance for stability
MIN (1)
TYP
0.7
1
0.7
1
5
MAX
UNIT
µF
10
µF
500
mΩ
The minimum capacitance should be greater than 0.5 µF over the full range of operating conditions. The capacitor tolerance should be
30% or better over the full temperature range. The full range of operating conditions for the capacitor in the application must be
considered during device selection to ensure this minimum capacitance specification is met. X7R capacitors are recommended however
capacitor types X5R, Y5V and Z5U may be used with consideration of the application and conditions.
This specification is verified by design.
Copyright © 2012–2018, Texas Instruments Incorporated
7
LP5907
ZHCSD40N – APRIL 2012 – REVISED APRIL 2018
www.ti.com.cn
6.7 Typical Characteristics
VIN = 3.7 V, VOUT = 2.8 V, IOUT = 1 mA, CIN = 1 µF, COUT = 1 µF, TA = 25°C (unless otherwise noted)
1
16
14
0.9
10
VEN (V)
IQ( A)
12
8
6
0.8
0.7
4
0.6
2
VIH Rising
VIL Falling
0
2.3
2.8
3.3
3.8 4.3
VIN(V)
4.8
5.3
0.5
5.8
2
2.5
3
3.5
SVA-30180569
4
VIN (V)
4.5
5
5.5
6
D001
Figure 2. VEN Thresholds vs VIN
Figure 1. Quiescent Current vs Input Voltage
5
1.4
4.5
1.2
4
3.5
VOUT (V)
VOUT (V)
1
0.8
0.6
3
2.5
2
1.5
0.4
1
0.2
RLOAD = 1.2 k:
RLOAD = 4.8 :
RLOAD = 4.5 k:
RLOAD = 18 :
0.5
0
0
0
0.5
1
1.5
2
VIN (V)
2.5
0
1
2
D002
VOUT = 1.2 V, VEN = VIN
5
6
D003
Figure 4. VOUT vs VIN
350
2.900
300
2.875
250
2.850
VIN= 3.6V
2.825
VOUT(V)
GROUND CURRENT ( A)
4
VOUT = 4.5 V, VEN = VIN
Figure 3. VOUT vs VIN
200
2.800
150
2.775
100
2.750
VIN = 3.0V
VIN = 3.8V
VIN = 4.2V
VIN = 5.5V
50
0
0
50
100 150 200
IOUT(mA)
250
-40°C
90°C
25°C
2.725
2.700
300
SVA-30180571
Figure 5. Ground Current vs Output Current
8
3
VIN (V)
0
50
100
150
LOAD (mA)
200
250
SVA-30180567
Figure 6. Load Regulation
Copyright © 2012–2018, Texas Instruments Incorporated
LP5907
www.ti.com.cn
ZHCSD40N – APRIL 2012 – REVISED APRIL 2018
Typical Characteristics (continued)
VIN = 3.7 V, VOUT = 2.8 V, IOUT = 1 mA, CIN = 1 µF, COUT = 1 µF, TA = 25°C (unless otherwise noted)
2.900
0.2
Load = 10 mA
2.875
0.1
2.850
2.825
VOUT(V)
'VOUT (%)
0
2.800
-0.1
2.775
-0.2
2.750
-40°C
90°C
25°C
2.725
-0.3
2.700
-0.4
-50
-25
0
25
50
75
Junction Temperature (qC)
100
3.0
125
D010
3.5
4.0
4.5
VIN(V)
5.0
5.5
SVA-30180568
Figure 8. Line Regulation
Figure 7. ΔVOUT vs Temperature
2V/DIV
VOUT
VOUT
(AC Coupled)
10 mV/
DIV
VIN
1V/DIV
2V/DIV
VIN = VEN
1A/DIV
IIN
2 ms/DIV
10 s/DIV
SVA-30180509
SVA-30180510
VIN = 3.2 V ↔ 4.2 V, load = 1 mA
Figure 9. Inrush Current
Figure 10. Line Transient
VOUT
(AC Coupled)
10 mV/
DIV
VIN
1V/DIV
10 s/DIV
VOUT
100 mV/DIV
LOAD
200 mA/DIV
100 s/DIV
SVA-30180511
VIN = 3.2 V ↔ 4.2 V, load = 250 mA
Figure 11. Line Transient
Copyright © 2012–2018, Texas Instruments Incorporated
SVA-30180512
Load = 0 mA ↔ 250 mA, –40°C
Figure 12. Load Transient
9
LP5907
ZHCSD40N – APRIL 2012 – REVISED APRIL 2018
www.ti.com.cn
Typical Characteristics (continued)
VIN = 3.7 V, VOUT = 2.8 V, IOUT = 1 mA, CIN = 1 µF, COUT = 1 µF, TA = 25°C (unless otherwise noted)
VOUT
100 mV/DIV
LOAD
200 mA/DIV
VOUT
100 mV/DIV
LOAD
200 mA/DIV
100 s/DIV
100 s/DIV
SVA-30180513
SVA-30180514
Load = 0 mA ↔ 250 mA, 90°C
Load = 0 mA ↔ 250 mA, 25°C
Figure 13. Load Transient
Figure 14. Load Transient
1V/DIV
1V/DIV
VOUT
VOUT
1V/DIV
1V/DIV
EN
EN
20 s/DIV
20 s/DIV
SVA-30180516
Load = 250 mA
SVA-30180515
Load = 0 mA
Figure 15. Start-Up
Figure 16. Start-Up
DROPOUT VOLTAGE (mV)
140
120
100
80
60
40
Dropout Voltage
20
0
0
50
100
150
200
LOAD CURRENT (mA)
250
SVA-30180573
Figure 17. Noise Density Test
10
Figure 18. Dropout Voltage vs Load Current
Copyright © 2012–2018, Texas Instruments Incorporated
LP5907
www.ti.com.cn
ZHCSD40N – APRIL 2012 – REVISED APRIL 2018
Typical Characteristics (continued)
VIN = 3.7 V, VOUT = 2.8 V, IOUT = 1 mA, CIN = 1 µF, COUT = 1 µF, TA = 25°C (unless otherwise noted)
0
0
250 mA
200 mA
150 mA
100 mA
50 mA
20 mA
PSRR (dB)
-40
-20
-40
PSRR (dB)
-20
-60
-60
-80
-80
-100
-100
-120
0.1
1
10
FREQUENCY (kHz)
100
D004
Figure 19. PSRR Loads Averaged 100 Hz to 100 kHz
Copyright © 2012–2018, Texas Instruments Incorporated
250 mA
200 mA
150 mA
100 mA
50 mA
20 mA
-120
0.01
0.1
1
10
100
FREQUENCY (kHz)
1000
10000
D005
Figure 20. PSRR Loads Averaged 10 Hz to 10 MHz
11
LP5907
ZHCSD40N – APRIL 2012 – REVISED APRIL 2018
www.ti.com.cn
7 Detailed Description
7.1 Overview
Designed to meet the needs of sensitive RF and analog circuits, the LP5907 provides low noise, high PSRR, low
quiescent current, as well as low line and load transient response figures. Using new innovative design
techniques, the LP5907 offers class leading noise performance without the need for a separate noise filter
capacitor.
The LP5907 is designed to perform with a single 1-µF input capacitor and a single 1-µF ceramic output
capacitor. With a reasonable PCB layout, the single 1-µF ceramic output capacitor can be placed up to 10 cm
away from the LP5907 device.
7.2 Functional Block Diagram
OUT
IN
POR
EN
EN
+
RF
CF
+
VBG
1.20V
RAD
EN
+
EN
EN
1M
VIH
GND
7.3 Feature Description
7.3.1 Enable (EN)
The LP5907 EN pin is internally held low by a 1-MΩ resistor to GND. The EN pin voltage must be higher than the
VIH threshold to ensure that the device is fully enabled under all operating conditions. The EN pin voltage must
be lower than the VIL threshold to ensure that the device is fully disabled and the automatic output discharge is
activated.
7.3.2 Low Output Noise
Any internal noise at the LP5907 reference voltage is reduced by a first order low-pass RC filter before it is
passed to the output buffer stage. The low-pass RC filter has a –3 dB cut-off frequency of approximately 0.1 Hz.
12
Copyright © 2012–2018, Texas Instruments Incorporated
LP5907
www.ti.com.cn
ZHCSD40N – APRIL 2012 – REVISED APRIL 2018
Feature Description (continued)
7.3.3 Output Automatic Discharge
The LP5907 output employs an internal 230-Ω (typical) pulldown resistance to discharge the output when the EN
pin is low, and the device is disabled.
7.3.4 Remote Output Capacitor Placement
The LP5907 requires at least a 1-µF capacitor at the OUT pin, but there are no strict requirements about the
location of the capacitor in regards the OUT pin. In practical designs, the output capacitor may be located up to
10 cm away from the LDO.
7.3.5 Thermal Overload Protection (TSD)
Thermal shutdown disables the output when the junction temperature rises to approximately 160°C which allows
the device to cool. When the junction temperature cools to approximately 145°C, the output circuitry enables.
Based on power dissipation, thermal resistance, and ambient temperature, the thermal protection circuit may
cycle on and off. This thermal cycling limits the dissipation of the regulator and protects it from damage as a
result of overheating.
The thermal shutdown circuitry of the LP5907 has been designed to protect against temporary thermal overload
conditions. The TSD circuitry was not intended to replace proper heat-sinking. Continuously running the LP5907
device into thermal shutdown may degrade device reliability.
7.4 Device Functional Modes
7.4.1 Enable (EN)
The LP5907 Enable (EN) pin is internally held low by a 1-MΩ resistor to GND. The EN pin voltage must be
higher than the VIH threshold to ensure that the device is fully enabled under all operating conditions.
When the EN pin is pulled low, and the output is disabled, the output automatic discharge circuitry is activated.
Any charge on the OUT pin is discharged to GND through the internal 230-Ω (typical) pulldown resistance.
7.4.2 Minimum Operating Input Voltage (VIN)
The LP5907 does not include any dedicated UVLO circuitry. The LP5907 internal circuitry is not fully functional
until VIN is at least 2.2 V. The output voltage is not regulated until VIN has reached at least the greater of 2.2 V or
(VOUT + VDO).
Copyright © 2012–2018, Texas Instruments Incorporated
13
LP5907
ZHCSD40N – APRIL 2012 – REVISED APRIL 2018
www.ti.com.cn
8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The LP5907 is designed to meet the requirements of RF and analog circuits, by providing low noise, high PSRR,
low quiescent current, and low line or load transient response figures. The device offers excellent noise
performance without the need for a noise bypass capacitor and is stable with input and output capacitors with a
value of 1 µF. The LP5907 delivers this performance in industry standard packages such as DSBGA, X2SON,
and SOT-23 which, for this device, are specified with an operating junction temperature (TJ) of –40°C to 125°C.
8.2 Typical Application
Figure 21 shows the typical application circuit for the LP5907. Input and output capacitances may need to be
increased above the 1 µF minimum for some applications.
INPUT
IN
1 PF
ENABLE
OUT
LP5907
OUTPUT
1 PF
EN
GND
GND
Figure 21. LP5907 Typical Application
8.2.1 Design Requirements
14
DESIGN PARAMETER
EXAMPLE VALUE
Input voltage range
2.2 V to 5.5 V
Output voltage
1.8 V
Output current
200 mA
Output capacitor range
0.7 µF to 10 µF
Input/Output capacitor ESR range
5 to 500 mΩ
Copyright © 2012–2018, Texas Instruments Incorporated
LP5907
www.ti.com.cn
ZHCSD40N – APRIL 2012 – REVISED APRIL 2018
8.2.2 Detailed Design Procedure
8.2.2.1 Custom Design With WEBENCH® Tools
Click here to create a custom design using the LP5907 device with the WEBENCH® Power Designer.
1. Start by entering the input voltage (VIN), output voltage (VOUT), and output current (IOUT) requirements.
2. Optimize the design for key parameters such as efficiency, footprint, and cost using the optimizer dial.
3. Compare the generated design with other possible solutions from Texas Instruments.
The WEBENCH Power Designer provides a customized schematic along with a list of materials with real-time
pricing and component availability.
In most cases, these actions are available:
• Run electrical simulations to see important waveforms and circuit performance
• Run thermal simulations to understand board thermal performance
• Export customized schematic and layout into popular CAD formats
• Print PDF reports for the design, and share the design with colleagues
Get more information about WEBENCH tools at www.ti.com/WEBENCH.
8.2.2.2 Power Dissipation and Device Operation
The permissible power dissipation for any package is a measure of the capability of the device to pass heat from
the power source, the junctions of the IC, to the ultimate heat sink, the ambient environment. Thus, the power
dissipation is dependent on the ambient temperature and the thermal resistance across the various interfaces
between the die junction and ambient air.
The maximum allowable power dissipation for the device in a given package can be calculated using Equation 1:
PD-MAX = ((TJ-MAX – TA) / RθJA)
(1)
The actual power being dissipated in the device can be represented by Equation 2:
PD = (VIN – VOUT) × IOUT
(2)
These two equations establish the relationship between the maximum power dissipation allowed due to thermal
consideration, the voltage drop across the device, and the continuous current capability of the device. These two
equations should be used to determine the optimum operating conditions for the device in the application.
In applications where lower power dissipation (PD) and/or excellent package thermal resistance (RθJA) is present,
the maximum ambient temperature (TA-MAX) may be increased.
In applications where high power dissipation and/or poor package thermal resistance is present, the maximum
ambient temperature (TA-MAX) may have to be derated. TA-MAX is dependent on the maximum operating junction
temperature (TJ-MAX-OP = 125°C), the maximum allowable power dissipation in the device package in the
application (PD-MAX), and the junction-to ambient thermal resistance of the part/package in the application (RθJA),
as given by Equation 3:
TA-MAX = (TJ-MAX-OP – (RθJA × PD-MAX))
(3)
Alternately, if TA-MAX can not be derated, the PD value must be reduced. This can be accomplished by reducing
VIN in the VIN–VOUT term as long as the minimum VIN is met, or by reducing the IOUT term, or by some
combination of the two.
8.2.2.3 External Capacitors
Like most low-dropout regulators, the LP5907 requires external capacitors for regulator stability. The device is
specifically designed for portable applications requiring minimum board space and smallest components. These
capacitors must be correctly selected for good performance.
8.2.2.4 Input Capacitor
An input capacitor is required for stability. The input capacitor should be at least equal to, or greater than, the
output capacitor for good load transient performance. At least a 1 µF capacitor has to be connected between the
LP5907 input pin and ground for stable operation over full load current range. Basically, it is ok to have more
output capacitance than input, as long as the input is at least 1 µF.
Copyright © 2012–2018, Texas Instruments Incorporated
15
LP5907
ZHCSD40N – APRIL 2012 – REVISED APRIL 2018
www.ti.com.cn
The input capacitor must be located a distance of not more than 1 cm from the input pin and returned to a clean
analog ground. Any good quality ceramic, tantalum, or film capacitor may be used at the input.
NOTE
To ensure stable operation it is essential that good PCB practices are employed to
minimize ground impedance and keep input inductance low. If these conditions cannot be
met, or if long leads are to be used to connect the battery or other power source to the
LP5907, TI recommends increasing the input capacitor to at least 10 µF. Also, tantalum
capacitors can suffer catastrophic failures due to surge current when connected to a lowimpedance source of power (like a battery or a very large capacitor). If a tantalum
capacitor is used at the input, it should be verified by the manufacturer to have a surge
current rating sufficient for the application. The initial tolerance, applied voltage de-rating,
and temperature coefficient must all be considered when selecting the input capacitor to
ensure the actual capacitance is never less than 0.7 µF over the entire operating range.
8.2.2.5 Output Capacitor
The LP5907 is designed specifically to work with a very small ceramic output capacitor, typically 1 µF. A ceramic
capacitor (dielectric types X5R or X7R) in the 1 µF to 10 µF range, and with ESR between 5 mΩ to 500 mΩ, is
suitable in the LP5907 application circuit. For this device the output capacitor should be connected between the
OUT pin and a good connection back to the GND pin.
It may also be possible to use tantalum or film capacitors at the device output, VOUT, but these are not as
attractive for reasons of size and cost (see Capacitor Characteristics).
The output capacitor must meet the requirement for the minimum value of capacitance and have an ESR value
that is within the range 5 mΩ to 500 mΩ for stability. Like the input capacitor, the initial tolerance, applied voltage
de-rating, and temperature coefficient must all be considered when selecting the input capacitor to ensure the
actual capacitance is never less than 0.7 µF over the entire operating range.
8.2.2.6 Capacitor Characteristics
The LP5907 is designed to work with ceramic capacitors on the input and output to take advantage of the
benefits they offer. For capacitance values in the range of 1 µF to 10 µF, ceramic capacitors are the smallest,
least expensive and have the lowest ESR values, thus making them best for eliminating high frequency noise.
The ESR of a typical 1 µF ceramic capacitor is in the range of 20 mΩ to 40 mΩ, which easily meets the ESR
requirement for stability for the LP5907.
A better choice for temperature coefficient in a ceramic capacitor is X7R. This type of capacitor is the most stable
and holds the capacitance within ±15% over the temperature range. Tantalum capacitors are less desirable than
ceramic for use as output capacitors because they are more expensive when comparing equivalent capacitance
and voltage ratings in the 1 µF to 10 µF range.
Another important consideration is that tantalum capacitors have higher ESR values than equivalent size
ceramics. This means that while it may be possible to find a tantalum capacitor with an ESR value within the
stable range, it would have to be larger in capacitance (which means bigger and more costly) than a ceramic
capacitor with the same ESR value. It should also be noted that the ESR of a typical tantalum increases about
2:1 as the temperature goes from 25°C down to –40°C, so some guard band must be allowed.
8.2.2.7 Remote Capacitor Operation
The LP5907 requires at least a 1-µF capacitor at the OUT pin, but there is no strict requirements about the
location of the capacitor in regards to the pin. In practical designs the output capacitor may be located up to 10
cm away from the LDO. This means that there is no need to have a special capacitor close to the output pin if
there is already respective capacitors in the system (like a capacitor at the input of supplied part). The remote
capacitor feature helps user to minimize the number of capacitors in the system.
16
Copyright © 2012–2018, Texas Instruments Incorporated
LP5907
www.ti.com.cn
ZHCSD40N – APRIL 2012 – REVISED APRIL 2018
As a good design practice, keep the wiring parasitic inductance at a minimum, which means to use as wide as
possible traces from the LDO output to the capacitors, keeping the LDO output trace layer as close to ground
layer as possible and avoiding vias on the path. If there is a need to use vias, implement as many as possible
vias between the connection layers. The recommendation is to keep parasitic wiring inductance less than 35 nH.
For the applications with fast load transients, it is recommended to use an input capacitor equal to or larger to
the sum of the capacitance at the output node for the best load transient performance.
8.2.2.8 No-Load Stability
The LP5907 remains stable, and in regulation, with no external load.
8.2.2.9 Enable Control
The LP5907 may be switched ON or OFF by a logic input at the EN pin. A voltage on this pin greater than VIH
turns the device on, while a voltage less than VIL turns the device off.
When the EN pin is low, the regulator output is off and the device typically consumes less than 1 µA.
Additionally, an output pulldown circuit is activated which ensures that any charge stored on COUT is discharged
to ground.
If the application does not require the use of the shutdown feature, the EN pin can be tied directly to the IN pin to
keep the regulator output permanently on.
An internal 1-MΩ pulldown resistor ties the EN input to ground, ensuring that the device remains off if the EN pin
is left open circuit. To ensure proper operation, the signal source used to drive the EN pin must be able to swing
above and below the specified turnon or turnoff voltage thresholds listed in the Electrical Characteristics under
VIL and VIH.
8.2.3 Application Curves
1V/DIV
VOUT
100 mV/DIV
LOAD
200 mA/DIV
VOUT
1V/DIV
EN
100 s/DIV
20 s/DIV
SVA-30180515
Figure 22. Start-Up
SVA-30180514
Figure 23. Load Transient Response
9 Power Supply Recommendations
This device is designed to operate from an input supply voltage range of 2.2 V to 5.5 V. The input supply must
be well regulated and free of spurious noise. To ensure that the LP5907 output voltage is well regulated and
dynamic performance is optimum, the input supply must be at least VOUT + 1 V. A minimum capacitor value of 1
µF is required to be within 1 cm of the IN pin.
Copyright © 2012–2018, Texas Instruments Incorporated
17
LP5907
ZHCSD40N – APRIL 2012 – REVISED APRIL 2018
www.ti.com.cn
10 Layout
10.1 Layout Guidelines
The dynamic performance of the LP5907 is dependant on the layout of the PCB. PCB layout practices that are
adequate for typical LDOs may degrade the PSRR, noise, or transient performance of the LP5907.
Best performance is achieved by placing CIN and COUT on the same side of the PCB as the LP5907, and as
close to the package as is practical. The ground connections for CIN and COUT must be back to the LP5907
ground pin using as wide and short a copper trace as is practical.
Connections using long trace lengths, narrow trace widths, and/or connections through vias must be avoided.
These add parasitic inductances and resistance that results in inferior performance especially during transient
conditions
10.1.1 X2SON Mounting
The X2SON package thermal pad must be soldered to the printed circuit board for proper thermal and
mechanical performance. For more information, see the QFN/SON PCB Attachment application report.
10.1.2 DSBGA Mounting
The DSBGA package requires specific mounting techniques, which are detailed in AN-1112 DSBGA Wafer Level
Chip Scale Package. For best results during assembly, alignment ordinals on the PC board may be used to
facilitate placement of the DSBGA device.
10.1.3 DSBGA Light Sensitivity
Exposing the DSBGA device to direct light may cause incorrect operation of the device. Light sources such as
halogen lamps can affect electrical performance if they are situated in proximity to the device. Light with
wavelengths in the red and infrared part of the spectrum have the most detrimental effect; thus, the fluorescent
lighting used inside most buildings has very little effect on performance.
10.2 Layout Examples
VIN
VOUT
CIN
1
IN
2
GND
3
EN
OUT
5
GND
Enable
COUT
GND
N/C
4
Figure 24. LP5907MF-x.x (SOT-23) Typical Layout
18
Copyright © 2012–2018, Texas Instruments Incorporated
LP5907
www.ti.com.cn
ZHCSD40N – APRIL 2012 – REVISED APRIL 2018
Layout Examples (continued)
LP5907SN
VOUT
1
VIN
4
COUT
CIN
2
3
Power Ground
VEN
Figure 25. LP5907SN-xx (X2SON) Typical Layout
VIN
LP5907UV
A1
VOUT
A2
COUT
CIN
B1
VEN
B2
Power Ground
Figure 26. LP5907A/UV-x.x (DSBGA) Typical Layout
版权 © 2012–2018, Texas Instruments Incorporated
19
LP5907
ZHCSD40N – APRIL 2012 – REVISED APRIL 2018
www.ti.com.cn
11 器件和文档支持
11.1 文档支持
11.1.1 使用 WEBENCH® 工具创建定制设计
单击此处，使用 LP5907 器件并借助 WEBENCH® 电源设计器创建定制设计方案。
1. 首先键入输入电压 (VIN)、输出电压 (VOUT) 和输出电流 (IOUT) 要求。
2. 使用优化器拨盘优化关键参数设计，如效率、封装和成本。
3. 将生成的设计与德州仪器 (TI) 的其他解决方案进行比较。
WEBENCH 电源设计器可提供定制原理图以及罗列实时价格和组件供货情况的物料清单。
在多数情况下，可执行以下操作：
• 运行电气仿真，观察重要波形以及电路性能
• 运行热性能仿真，了解电路板热性能
• 将定制原理图和布局方案导出至常用 CAD 格式
• 打印设计方案的 PDF 报告并与同事共享
有关 WEBENCH 工具的详细信息，请访问 www.ti.com.cn/WEBENCH。
11.1.2 相关文档
如需相关文档，请参阅：
• AN-1112 DSBGA 晶圆级芯片级封装
• 《QFN/SON PCB 连接》应用报告
11.2 接收文档更新通知
要接收文档更新通知，请导航至 TI.com.cn 上的器件产品文件夹。单击右上角的通知我 进行注册，即可每周接收产
品信息更改摘要。有关更改的详细信息，请查看任何已修订文档中包含的修订历史记录。
11.3 社区资源
下列链接提供到 TI 社区资源的连接。链接的内容由各个分销商“按照原样”提供。这些内容并不构成 TI 技术规范，
并且不一定反映 TI 的观点；请参阅 TI 的 《使用条款》。
TI E2E™ 在线社区 TI 的工程师对工程师 (E2E) 社区。此社区的创建目的在于促进工程师之间的协作。在
e2e.ti.com 中，您可以咨询问题、分享知识、拓展思路并与同行工程师一道帮助解决问题。
设计支持
TI 参考设计支持 可帮助您快速查找有帮助的 E2E 论坛、设计支持工具以及技术支持的联系信息。
11.4 商标
E2E is a trademark of Texas Instruments.
WEBENCH is a registered trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
11.5 静电放电警告
这些装置包含有限的内置 ESD 保护。 存储或装卸时，应将导线一起截短或将装置放置于导电泡棉中，以防止 MOS 门极遭受静电损
伤。
11.6 术语表
SLYZ022 — TI 术语表。
这份术语表列出并解释术语、缩写和定义。
12 机械、封装和可订购信息
以下页面包含机械、封装和可订购信息。这些信息是指定器件的最新可用数据。数据如有变更，恕不另行通知，且
不会对此文档进行修订。如需获取此数据表的浏览器版本，请参阅左侧的导航栏。
20
版权 © 2012–2018, Texas Instruments Incorporated
PACKAGE OPTION ADDENDUM
www.ti.com
3-May-2022
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
LP5907A28YKMR
ACTIVE
DSBGA
YKM
4
3000
RoHS & Green
SAC396
Level-1-260C-UNLIM
-40 to 125
Q
Samples
LP5907A29YKMR
ACTIVE
DSBGA
YKM
4
3000
RoHS & Green
SAC396
Level-1-260C-UNLIM
-40 to 125
Y
Samples
LP5907A33YKMR
ACTIVE
DSBGA
YKM
4
3000
RoHS & Green
SAC396
Level-1-260C-UNLIM
-40 to 125
N
Samples
LP5907MFX-1.2/NOPB
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU | SN
Level-1-260C-UNLIM
-40 to 125
LLTB
Samples
LP5907MFX-1.5/NOPB
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU | SN
Level-1-260C-UNLIM
-40 to 125
LN8B
Samples
LP5907MFX-1.8/NOPB
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU | SN
Level-1-260C-UNLIM
-40 to 125
LLUB
Samples
LP5907MFX-2.5/NOPB
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU | SN
Level-1-260C-UNLIM
-40 to 125
LN7B
Samples
LP5907MFX-2.8/NOPB
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU | SN
Level-1-260C-UNLIM
-40 to 125
LLYB
Samples
LP5907MFX-2.85/NOPB
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU | SN
Level-1-260C-UNLIM
-40 to 125
LN4B
Samples
LP5907MFX-2.9/NOPB
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU | SN
Level-1-260C-UNLIM
-40 to 125
1E5X
Samples
LP5907MFX-3.0/NOPB
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU | SN
Level-1-260C-UNLIM
-40 to 125
LLZB
Samples
LP5907MFX-3.1/NOPB
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU | SN
Level-1-260C-UNLIM
-40 to 125
LN5B
Samples
LP5907MFX-3.2/NOPB
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU | SN
Level-1-260C-UNLIM
-40 to 125
LN6B
Samples
LP5907MFX-3.3/NOPB
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU | SN
Level-1-260C-UNLIM
-40 to 125
LLVB
Samples
LP5907MFX-4.5/NOPB
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU | SN
Level-1-260C-UNLIM
-40 to 125
LLXB
Samples
LP5907SNX-1.2/NOPB
ACTIVE
X2SON
DQN
4
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
CF
Samples
LP5907SNX-1.8/NOPB
ACTIVE
X2SON
DQN
4
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
CG
Samples
LP5907SNX-1.9
ACTIVE
X2SON
DQN
4
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
3Z
Samples
LP5907SNX-2.2/NOPB
ACTIVE
X2SON
DQN
4
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
EP
Samples
LP5907SNX-2.5/NOPB
ACTIVE
X2SON
DQN
4
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
F9
Samples
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
Orderable Device
3-May-2022
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
LP5907SNX-2.7/NOPB
ACTIVE
X2SON
DQN
4
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
CH
Samples
LP5907SNX-2.75
ACTIVE
X2SON
DQN
4
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
HI
Samples
LP5907SNX-2.8/NOPB
ACTIVE
X2SON
DQN
4
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
CI
Samples
LP5907SNX-2.85/NOPB
ACTIVE
X2SON
DQN
4
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
CJ
Samples
LP5907SNX-2.9/NOPB
ACTIVE
X2SON
DQN
4
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
GV
Samples
LP5907SNX-3.0/NOPB
ACTIVE
X2SON
DQN
4
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
CK
Samples
LP5907SNX-3.1/NOPB
ACTIVE
X2SON
DQN
4
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
CL
Samples
LP5907SNX-3.2/NOPB
ACTIVE
X2SON
DQN
4
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
CM
Samples
LP5907SNX-3.3/NOPB
ACTIVE
X2SON
DQN
4
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
CN
Samples
LP5907SNX-4.0/NOPB
ACTIVE
X2SON
DQN
4
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
GU
Samples
LP5907SNX-4.5/NOPB
ACTIVE
X2SON
DQN
4
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
CO
Samples
LP5907UVE-1.2/NOPB
ACTIVE
DSBGA
YKE
4
250
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 125
R
Samples
LP5907UVE-1.8/NOPB
ACTIVE
DSBGA
YKE
4
250
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 125
S
Samples
LP5907UVE-2.8/NOPB
ACTIVE
DSBGA
YKE
4
250
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 125
U
Samples
LP5907UVE-2.85/NOPB
ACTIVE
DSBGA
YKE
4
250
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 125
V
Samples
LP5907UVE-3.0/NOPB
ACTIVE
DSBGA
YKE
4
250
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 125
B
Samples
LP5907UVE-3.1/NOPB
ACTIVE
DSBGA
YKE
4
250
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 125
X
Samples
LP5907UVE-3.2/NOPB
ACTIVE
DSBGA
YKE
4
250
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 125
C
Samples
LP5907UVE-3.3/NOPB
ACTIVE
DSBGA
YKE
4
250
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 125
D
Samples
LP5907UVE-4.5/NOPB
ACTIVE
DSBGA
YKE
4
250
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 125
Z
Samples
LP5907UVX-1.2/NOPB
ACTIVE
DSBGA
YKE
4
3000
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 125
R
Samples
Addendum-Page 2
PACKAGE OPTION ADDENDUM
www.ti.com
Orderable Device
3-May-2022
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
LP5907UVX-1.6/NOPB
ACTIVE
DSBGA
YKE
4
3000
RoHS & Green
SAC396
Level-1-260C-UNLIM
-40 to 125
J
Samples
LP5907UVX-1.8/NOPB
ACTIVE
DSBGA
YKE
4
3000
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 125
S
Samples
LP5907UVX-2.2/NOPB
ACTIVE
DSBGA
YKE
4
3000
RoHS & Green
SAC396
Level-1-260C-UNLIM
-40 to 125
5
Samples
LP5907UVX-2.5/NOPB
ACTIVE
DSBGA
YKE
4
3000
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 125
E
Samples
LP5907UVX-2.8/NOPB
ACTIVE
DSBGA
YKE
4
3000
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 125
U
Samples
LP5907UVX-2.85/NOPB
ACTIVE
DSBGA
YKE
4
3000
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 125
V
Samples
LP5907UVX-3.0/NOPB
ACTIVE
DSBGA
YKE
4
3000
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 125
B
Samples
LP5907UVX-3.1/NOPB
ACTIVE
DSBGA
YKE
4
3000
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 125
X
Samples
LP5907UVX-3.2/NOPB
ACTIVE
DSBGA
YKE
4
3000
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 125
C
Samples
LP5907UVX-3.3/NOPB
ACTIVE
DSBGA
YKE
4
3000
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 125
D
Samples
LP5907UVX-4.5/NOPB
ACTIVE
DSBGA
YKE
4
3000
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 125
Z
Samples
LP5907UVX19/NOPB
ACTIVE
DSBGA
YKE
4
3000
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 125
8
Samples
LP5907UVX37/NOPB
ACTIVE
DSBGA
YKE
4
3000
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 125
9
Samples
LP5907YKGR-2.0
ACTIVE
DSBGA
YKG
4
3000
RoHS & Green
SAC396
Level-1-260C-UNLIM
-40 to 125
W
Samples
LP5907YKGR-2.8
ACTIVE
DSBGA
YKG
4
3000
RoHS & Green
SAC396
Level-1-260C-UNLIM
-40 to 125
3
Samples
LP5907YKGR-2.825
ACTIVE
DSBGA
YKG
4
3000
RoHS & Green
SAC396
Level-1-260C-UNLIM
-40 to 125
5
Samples
LP5907YKGR-2.85
ACTIVE
DSBGA
YKG
4
3000
RoHS & Green
SAC396
Level-1-260C-UNLIM
-40 to 125
P
Samples
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
Addendum-Page 3
PACKAGE OPTION ADDENDUM
www.ti.com
3-May-2022
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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