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LPV511
SNOSAG7D – AUGUST 2005 – REVISED AUGUST 2016
LPV511 Micropower, Rail-to-Rail Input and Output Operational Amplifier
1 Features
3 Description
•
•
•
•
•
•
•
•
The LPV511 is a micropower operational amplifier
that operates from a voltage supply range as wide as
2.7 V to 12 V with ensured specifications at 3 V, 5 V,
and 12 V. The ultra-low power LPV511 exhibits an
excellent speed to power ratio, drawing only 880 nA
of supply current with a bandwidth of 27 kHz. These
specifications make the LPV511 an ideal choice for
battery-powered systems that require long life
through low supply current, such as instrumentation,
sensor conditioning and battery current monitoring.
1
Wide Supply Voltage Range: 2.7 V to 12 V
Slew Rate: 7.7 V/ms
Supply Current: 880 nA
Output Short-Circuit Current: 1.35 mA
Rail-to-Rail Input
Rail-to-Rail Output: 100 mV from Rails
Bandwidth (CL = 50 pF, RL = 1 MΩ): 27 kHz
Unity Gain Stable
The LPV511 has an input range that includes both
supply rails for ground and high-side battery sensing
applications. The LPV511 output swings within 100
mV of either rail to maximize the signal's dynamic
range in low supply applications. In addition, the
output is capable of sourcing 650 µA of current when
powered by a 12-V battery.
2 Applications
•
•
•
•
•
•
•
Battery Powered Systems
Security Systems
Micropower Thermostats
Solar Powered Systems
Portable Instrumentation
Micropower Filters
Remote Sensor Amplifiers
The LPV511 is fabricated on TI's advanced VIP50C
process.
The LPV511 is available in the space-saving SC70
package, which makes it ideal for portable electronics
with area-constrained PC boards.
Device Information(1)
PART NUMBER
PACKAGE
LPV511
BODY SIZE (NOM)
SC70 (5)
2.00 mm × 1.25 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Typical Supply Current
High-Side Battery Current Sensor
V+
1.6
SUPPLY CURRENT (PA)
+
R1
2 NŸ
125°C
1.4
85ºC
-
1.2
RSENSE
0.2 Ÿ
1
25°C
0.8
R2
2 NŸ
±
Q1
2N3906
+
-40°C
0.6
VOUT
Load
R3
0.4
10 NŸ
ICHARGE
0.2
0
0
2
4
6
8
SUPPLY VOLTAGE (V)
10
12
VOUT
RSENSE u R3
R1
u ICHARGE
1: u ICHARGE
Copyright © 2016, Texas Instruments Incorporated
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
LPV511
SNOSAG7D – AUGUST 2005 – REVISED AUGUST 2016
www.ti.com
Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
6.1
6.2
6.3
6.4
6.5
6.6
6.7
6.8
4
4
4
4
5
6
7
9
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics: 3 V ...................................
Electrical Characteristics: 5 V ...................................
Electrical Characteristics: 12 V ................................
Typical Characteristics ..............................................
Detailed Description ............................................ 14
7.1 Overview ................................................................. 14
7.2 Functional Block Diagram ....................................... 14
7.3 Feature Description................................................. 14
7.4 Device Functional Modes........................................ 14
8
Application and Implementation ........................ 16
8.1 Application Information............................................ 16
8.2 Typical Applications ................................................ 16
8.3 Dos and Don'ts ....................................................... 17
9 Power Supply Recommendations...................... 18
10 Layout................................................................... 18
10.1 Layout Guidelines ................................................. 18
10.2 Layout Example .................................................... 18
11 Device and Documentation Support ................. 19
11.1
11.2
11.3
11.4
11.5
11.6
Device Support ....................................................
Documentation Support .......................................
Community Resource............................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
19
19
19
19
19
19
12 Mechanical, Packaging, and Orderable
Information ........................................................... 19
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision C (March 2013) to Revision D
Page
•
Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section ................................................................................................. 1
•
Added Thermal Information table .......................................................................................................................................... 4
Changes from Revision B (March 2013) to Revision C
•
2
Page
Changed layout of National Semiconductor Data Sheet to TI format .................................................................................... 1
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SNOSAG7D – AUGUST 2005 – REVISED AUGUST 2016
5 Pin Configuration and Functions
DCK Package
5-Pin SC70
Top View
5
1
VOUT
VIN+
±
2
+
V-
V+
4
3
VIN-
Pin Functions
PIN
NO.
1
NAME
VOUT
–
I/O
DESCRIPTION
O
Output
2
V
P
Negative supply voltage
3
VIN+
I
Noninverting input
4
VIN–
I
Inverting input
P
Positive supply voltage
5
+
V
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LPV511
SNOSAG7D – AUGUST 2005 – REVISED AUGUST 2016
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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1) (2)
MIN
VIN Differential
+
−
Supply voltage (V - V )
V+ + 0.3
Voltage at input and output pins
Junction temperature, TJ (4)
Storage temperature, Tstg
(2)
(3)
(4)
UNIT
2.1
V
13.2
V
V− − 0.3
V
150
°C
150
°C
See (3)
Short-circuit duration
(1)
MAX
–65
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
If Military/Aerospace specified devices are required, contact the Texas Instruments Sales Office/ Distributors for availability and
specifications.
Output short-circuit duration is infinite for V+ < 6 V at room temperature and below. For V+ > 6 V, allowable short-circuit duration is 1.5
ms.
The maximum power dissipation is a function of TJ(MAX), RθJA, and TA. The maximum allowable power dissipation at any ambient
temperature is PD = (TJ(MAX) – TA) / RθJA. All numbers apply for packages soldered directly onto a PC board.
6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
(3)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) (2)
±2000
Machine model (MM) (3)
±200
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
Human Body Model: 1.5 kΩ in series with 100 pF.
Machine Model: 0 Ω in series with 200 pF.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
Temperature (1)
+
−
Supply voltage (V – V )
(1)
MIN
MAX
–40
85
UNIT
°C
2.7
12
V
The maximum power dissipation is a function of TJ(MAX), RθJA, and TA. The maximum allowable power dissipation at any ambient
temperature is PD = (TJ(MAX) – TA) / RθJA. All numbers apply for packages soldered directly onto a PC board.
6.4 Thermal Information
LPV511
THERMAL METRIC (1)
DCK (SC70)
UNIT
5 PINS
RθJA
Junction-to-ambient thermal resistance
278
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
105.8
°C/W
RθJB
Junction-to-board thermal resistance
56.4
°C/W
ψJT
Junction-to-top characterization parameter
3
°C/W
ψJB
Junction-to-board characterization parameter
55
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
n/a
°C/W
(1)
4
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
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SNOSAG7D – AUGUST 2005 – REVISED AUGUST 2016
6.5 Electrical Characteristics: 3 V
Unless otherwise specified, all limits are specified for TJ = 25°C, V+ = 3 V, V− = 0 V, VCM = VO = V+/2, and RL = 100 kΩ to
V+/2. (1)
PARAMETER
VOS
Input offset voltage
TC VOS
Input offset voltage drift (4)
TEST CONDITIONS
TJ = 25°C
PSRR
CMVR
Power supply rejection ratio
Input common-mode voltage
Output swing low
Output short circuit current (6)
IS
Supply current
SR
Slew rate (7)
(3)
(4)
(5)
(6)
(7)
TJ = –40°C to 85°C
–1600
UNIT
mV
µV/°C
–320
110
800
±10
77
TJ = –40°C to 85°C
70
VCM Stepped from 2.4 V
to 3 V
TJ = 25°C
75
TJ = –40°C to 85°C
68
VCM Stepped from 0.5 V
to 2.5 V
TJ = 25°C
60
TJ = –40°C to 85°C
56
V+ = 2.7 V to 5 V,
VCM = 0.5 V
TJ = 25°C
72
TJ = –40°C to 85°C
68
V+ = 3 V to 5 V,
VCM = 0.5 V
TJ = 25°C
76
TJ = –40°C to 85°C
72
V+ = 5 V to 12 V,
VCM = 0.5 V
TJ = 25°C
84
TJ = –40°C to 85°C
80
CMRR ≥ 50 dB
VID = 100 mV
VID = −100 mV
TJ = 25°C
TJ = –40°C to 85°C
80
114
115
dB
117
3
70
TJ = 25°C
75
V
105
dB
105
70
2.85
2.9
2.8
TJ = 25°C
100
TJ = –40°C to 85°C
150
V
200
Sourcing
VID = 100 mV
−500
−225
µA
Sinking
VID = −100 mV
225
TJ = 25°C
1350
0.88
TJ = –40°C to 85°C
AV = 1, VO ramps from
0.5 V to 2.5 V
dB
3.1
75
TJ = –40°C to 85°C
115
0
TJ = –40°C to 85°C
TJ = 25°C
pA
100
−0.1
TJ = 25°C
TJ = –40°C to 85°C
pA
1900
TJ = 25°C
VO
(2)
–1000
VCM Stepped from 0 V to
1.5 V
Large signal voltage gain
Output swing high
(1)
TJ = 25°C
TJ = –40°C to 85°C
Sourcing, VO = 0.5 V
ISC
±15
TJ = 25°C
Sinking, VO = 2.5 V
AVOL
±3
±0.3
Input offset current
Common mode rejection ratio
±0.2
TJ = –40°C to 85°C
VCM = 2.5 V
CMRR
MAX (2)
±3.8
TJ = 25°C
Input bias current (5)
IOS
TYP (3)
TJ = –40°C to 85°C
VCM = 0.5 V
IB
MIN (2)
1.2
1.5
TJ = 25°C
5.25
TJ = –40°C to 85°C
3.10
7.7
µA
V/ms
Electrical table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the device.
Limits are 100% production tested at 25°C. Limits over the operating temperature range are specified through correlations using the
Statistical Quality Control (SQC) method.
Typical values represent the most likely parametric norm at the time of characterization.
Offset voltage drift is specified by design and/or characterization and is not tested in production. Offset voltage drift is determined by
dividing the change in VOS at temperature extremes into the total temperature change.
Positive current corresponds to current flowing into the device.
The Short-Circuit Test is a momentary test. See Note 3 in Absolute Maximum Ratings.
Slew rate is the average of the rising and falling slew rates.
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Electrical Characteristics: 3 V (continued)
Unless otherwise specified, all limits are specified for TJ = 25°C, V+ = 3 V, V− = 0 V, VCM = VO = V+/2, and RL = 100 kΩ to
V+/2.(1)
PARAMETER
GBW
MIN (2)
TEST CONDITIONS
Gain bandwidth product
RL = 1 MΩ, CL= 50 pF
TYP (3)
MAX (2)
27
UNIT
kHz
Phase margin
RL = 1 MΩ, CL= 50 pF
53
º
en
Input-referred voltage noise
f = 100 Hz
320
nV/√Hz
in
Input-referred current noise
f = 10 Hz
0.02
f = 1 kHz
0.01
pA/√Hz
6.6 Electrical Characteristics: 5 V
Unless otherwise specified, all limits are specified for TJ = 25°C, V+ = 5 V, V− = 0 V, VCM = VO = V+/2, and RL = 100 kΩ to
V+/2. (1)
PARAMETER
VOS
Input offset voltage
TC VOS
Input offset voltage drift (4)
TJ = 25°C
PSRR
CMVR
Power supply rejection ratio
Input common-mode voltage
(2)
(3)
(4)
(5)
6
TJ = 25°C
–1000
TJ = –40°C to 85°C
–1600
110
800
±10
TJ = 25°C
80
TJ = –40°C to 85°C
73
VCM Stepped from
4.4 to 5 V
TJ = 25°C
75
TJ = –40°C to 85°C
68
VCM Stepped from
0.5 to 4.5 V
TJ = 25°C
65
TJ = –40°C to 85°C
62
V+ = 2.7 V to 5 V,
VCM = 0.5 V
TJ = 25°C
72
TJ = –40°C to 85°C
68
V+ = 3 V to 5 V,
VCM = 0.5 V
TJ = 25°C
76
TJ = –40°C to 85°C
72
V+ = 5 V to 12 V,
VCM = 0.5 V
TJ = 25°C
84
TJ = –40°C to 85°C
80
Large signal voltage gain
TJ = 25°C
TJ = –40°C to 85°C
mV
µV/°C
pA
1900
VCM Stepped from
0 V to 2.5 V
CMRR ≥ 50 dB
UNIT
–320
TJ = –40°C to 85°C
Sourcing, VO = 0.5 V
(1)
±15
TJ = 25°C
Sinking, VO = 4.5 V
AVOL
±3
±0.3
Input offset current
Common mode rejection ratio
±0.2
TJ = –40°C to 85°C
VCM = 4.5 V
CMRR
MAX (2)
±3.8
TJ = 25°C
Input bias current (5)
IOS
TYP (3)
TJ = –40°C to 85°C
VCM = 0.5 V
IB
MIN (2)
TEST CONDITIONS
pA
115
107
dB
87
114
115
dB
117
—0.1
5.1
0
5
TJ = 25°C
78
TJ = –40°C to 85°C
73
TJ = 25°C
78
TJ = –40°C to 85°C
73
V
110
110
dB
Electrical table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the device.
Limits are 100% production tested at 25°C. Limits over the operating temperature range are specified through correlations using the
Statistical Quality Control (SQC) method.
Typical values represent the most likely parametric norm at the time of characterization.
Offset voltage drift is specified by design and/or characterization and is not tested in production. Offset voltage drift is determined by
dividing the change in VOS at temperature extremes into the total temperature change.
Positive current corresponds to current flowing into the device.
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Electrical Characteristics: 5 V (continued)
Unless otherwise specified, all limits are specified for TJ = 25°C, V+ = 5 V, V− = 0 V, VCM = VO = V+/2, and RL = 100 kΩ to
V+/2.(1)
PARAMETER
TEST CONDITIONS
TJ = 25°C
Output swing high
VID = 100 mV
Output swing low
VID = −100 mV
TJ = –40°C to 85°C
VO
Output short circuit current (6)
ISC
MIN (2)
TYP (3)
4.8
4.89
MAX (2)
UNIT
V
4.75
TJ = 25°C
110
TJ = –40°C to 85°C
200
mV
250
Sourcing to V−
VID = 100 mV
–550
–225
µA
+
Sinking to V
VID = −100 mV
225
TJ = 25°C
1350
0.97
1.2
IS
Supply current
SR
Slew rate (7)
AV = 1, VO ramps from
0.5 V to 4.5 V
GBW
Gain bandwidth product
RL = 1 MΩ, CL= 50 pF
27
Phase margin
RL = 1 MΩ, CL= 50 pF
53
°
en
Input-referred voltage noise
f = 100 Hz
320
nV/√Hz
in
Input-referred current noise
f = 10 Hz
0.02
f = 1 kHz
0.01
(6)
(7)
TJ = –40°C to 85°C
µA
1.5
TJ = 25°C
TJ = –40°C to 85°C
5.25
7.5
V/ms
3.1
kHz
pA/√Hz
The Short-Circuit Test is a momentary test. See Note 3 in Absolute Maximum Ratings.
Slew rate is the average of the rising and falling slew rates.
6.7 Electrical Characteristics: 12 V
Unless otherwise specified, all limits are specified for TJ = 25°C, V+ = 12 V, V− = 0 V, VCM = VO = V+/2, and RL = 100 kΩ to
V+/2. (1)
PARAMETER
VOS
Input offset voltage
TC VOS
Input offset voltage drift (4)
TEST CONDITIONS
TJ = 25°C
(1)
(2)
(3)
(4)
(5)
(2)
UNIT
±3
±0.3
TJ = –40°C to 85°C
±15
TJ = 25°C
−1000
TJ = –40°C to 85°C
−1600
TJ = 25°C
mV
µV/°C
−320
110
TJ = –40°C to 85°C
800
pA
1900
Input offset current
Common mode rejection ratio
MAX
±3.8
TJ = 25°C
VCM = 11.5 V
CMRR
(3)
TJ = –40°C to 85°C
Input bias current (5)
IOS
TYP
±0.2
VCM = 0.5 V
IB
MIN (2)
±10
VCM Stepped from
0 V to 6 V
TJ = 25°C
75
TJ = –40°C to 85°C
70
VCM Stepped from
11.4 V to 12 V
TJ = 25°C
75
TJ = –40°C to 85°C
68
VCM Stepped from
0.5 V to 11.5 V
TJ = 25°C
70
TJ = –40°C to 85°C
65
pA
115
110
dB
97
Electrical table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the device.
Limits are 100% production tested at 25°C. Limits over the operating temperature range are specified through correlations using the
Statistical Quality Control (SQC) method.
Typical values represent the most likely parametric norm at the time of characterization.
Offset voltage drift is specified by design and/or characterization and is not tested in production. Offset voltage drift is determined by
dividing the change in VOS at temperature extremes into the total temperature change.
Positive current corresponds to current flowing into the device.
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SNOSAG7D – AUGUST 2005 – REVISED AUGUST 2016
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Electrical Characteristics: 12 V (continued)
Unless otherwise specified, all limits are specified for TJ = 25°C, V+ = 12 V, V− = 0 V, VCM = VO = V+/2, and RL = 100 kΩ to
V+/2.(1)
PARAMETER
TEST CONDITIONS
V = 2.7 V to 5 V,
VCM = 0.5 V
TJ = 25°C
72
TJ = –40°C to 85°C
68
V+ = 3 V to 5 V,
VCM = 0.5 V
TJ = 25°C
76
TJ = –40°C to 85°C
72
V+ = 5 V to 12 V,
VCM = 0.5 V
TJ = 25°C
84
TJ = –40°C to 85°C
80
+
PSRR
CMVR
Power supply rejection ratio
Input common-mode voltage
CMRR ≥ 50 dB
Sinking, VO = 0.5 V
AVOL
Large signal voltage gain
Sourcing, VO = 11.5 V
Output swing high
VID = 100 mV
Output swing low
VID = −100 mV
VO
ISC
Output short circuit current
(6)
MIN (2)
TJ = 25°C
TJ = –40°C to 85°C
TJ = 25°C
89
115
117
110
11.85
150
−650
GBW
Gain bandwidth product
RL = 1 MΩ, CL= 50 pF
mV
−200
µA
200
1300
1.2
AV = 1, VO ramped from 1 V to 11 V
200
280
TJ = 25°C
Slew rate (7)
V
11.72
Sourcing
VID = 100 mV
SR
dB
110
TJ = –40°C to 85°C
Supply current
V
84
11.8
TJ = 25°C
IS
UNIT
114
12
84
Sinking
VID = −100 mV
(2)
12.1
89
TJ = –40°C to 85°C
MAX
0
TJ = –40°C to 85°C
TJ = 25°C
(3)
−0.1
TJ = 25°C
TJ = –40°C to 85°C
TYP
TJ = –40°C to 85°C
1.75
2.5
5.25
7
3.1
25
µA
V/ms
kHz
Phase margin
RL = 1 MΩ, CL= 50 pF
52
°
en
Input-referred voltage noise
f = 100 Hz
320
nV/√Hz
in
Input-referred current noise
f = 10 Hz
0.02
f = 1 kHz
0.01
(6)
(7)
8
pA/√Hz
The Short-Circuit Test is a momentary test. See Note 3 in Absolute Maximum Ratings.
Slew rate is the average of the rising and falling slew rates.
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SNOSAG7D – AUGUST 2005 – REVISED AUGUST 2016
6.8 Typical Characteristics
At TJ = 25°C, unless otherwise specified.
1
1.6
+
125°C
V = 3V
0.8
85ºC
1.2
0.6
1
VOS (mV)
SUPPLY CURRENT (PA)
1.4
25°C
0.8
-40°C
0.6
-40°C
0.4
0.2
25°C
0
0.4
0.2
-0.2
0
-0.4
0
2
4
6
8
10
12
85ºC
0
1
2
3
SUPPLY VOLTAGE (V)
VCM (V)
Figure 1. Supply Current vs Supply Voltage
Figure 2. Input Offset Voltage vs Input Common Mode
1
1
+
+
V = 12V
0.8
0.8
0.6
0.6
-40°C
VOS (mV)
VOS (mV)
V = 5V
0.4
0.2
25°C
-40°C
0.4
0.2
25°C
0
0
-0.2
-0.2
85°C
-0.4
1
85°C
-0.4
2
3
4
-0.6
5
2
0
4
VCM (V)
Figure 3. Input Offset Voltage vs Input Common Mode
2
1.8
5
+
V = 5V
4.5
12
+
V = 5V
4
85°C
125°C
25°C
3.5
ISINK (mA)
1.4
1.2
85°C
1
10
Figure 4. Input Offset Voltage vs Input Common Mode
1.6
ISOURCE (mA)
8
6
VCM (V)
0.8
3
-40°C
2.5
-40°C
2
25°C
0.6
1.5
0.4
0.2
0
0.1
125°C
1
-40°C
0.5
1
0
0.1
10
+
1
10
-
OUTPUT VOLTAGE REFERENCED TO V (V)
OUTPUT VOLTAGE REFERENCED TO V (V)
Figure 5. Sourcing Current vs Output Voltage
Figure 6. Sinking Current vs Output Voltage
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Typical Characteristics (continued)
At TJ = 25°C, unless otherwise specified.
2
5
+
V = 12V
1.8
+
V = 12V
4.5
125°C
1.6
4
25°C
85°C
3.5
85°C
ISINK (mA)
ISOURCE (mA)
1.4
1.2
1
25°C
0.8
3
-40°C
2.5
-40°C
2
125°C
1.5
0.6
-40°C
0.4
1
0.2
0.5
0
0.1
1
10
0
0.1
100
+
1
10
100
-
OUTPUT VOLTAGE REFERENCED TO V (V)
OUTPUT VOLTAGE REFERENCED TO V (V)
Figure 7. Sourcing Current vs Output Voltage
Figure 8. Sinking Current vs Output Voltage
700
500
+
V = 3V
125°C
500
125°C
400
-40°C
300
100
25°C
IBIAS (pA)
IBIAS (pA)
300
-40°C
200
25°C
0
-100
-100
85°C
-300
85°C
100
-200
125°C
+
125°C
V = 5V
-500
-300
0
0.5
1
1.5
2
2.5
3
0
1
VCM (V)
2
3
4
5
VCM (V)
Figure 9. Input Bias Current vs Common Mode Voltage
Figure 10. Input Bias Current vs Common Mode Voltage
100
500
+
V = 12V
125°C
90
400
80
-40°C
70
PSRR (dB)
IBIAS (pA)
300
200
25°C
100
85°C
60
50
40
30
0
20
-100
10
125°C
-200
0
5
10
0
15
1
VCM (V)
100
1k
10k
FREQUENCY (Hz)
Figure 11. Input Bias Current vs Common Mode Voltage
10
10
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Figure 12. PSRR vs Frequency
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Typical Characteristics (continued)
At TJ = 25°C, unless otherwise specified.
203
180
180
160
158
140
120
135
120
135
100
113
100
113
90
60
68
25°C
40
CL = 20 pF
RL = 1 M:
45
PHASE
90
60
68
GAIN
0
0
0
-23
1M
-20
100
10k
100k
1k
100k
-23
1M
Figure 14. Frequency Response vs Temperature
203
160
158
140
120
135
120
135
100
113
100
113
CL = 20 pF
140
RL = 1 M:
PHASE
80
90
60
68
25°C
-40°C
40
GAIN (dB)
180
180
+
V = ±6V
PHASE (°)
203
160
GAIN (dB)
10k
FREQUENCY (Hz)
Figure 13. Frequency Response vs Temperature
+
V = 2.7V
CL = 20 pF
90
RL = 10 M:
60
40
45
20 GAIN
23
0
0
RL = 1 M:
-23
1M
-20
100
1k
100k
68
45
0
10k
158
PHASE
80
-20
100
1k
180
23
125°C
20 GAIN
0
10k
100k
-23
1M
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 15. Frequency Response vs Temperature
Figure 16. Frequency Response vs RL
203
180
160
158
140
120
135
120
135
100
113
100
113
+
V = 5V
160
CL = 20 pF
140
PHASE
90
80
RL = 10 M:
60
68
GAIN (dB)
180
PHASE (°)
203
180
GAIN (dB)
23
0
FREQUENCY (Hz)
180
45
125°C
20
-20
100
1k
-40°C
40
23
158
80
25°C
-40°C
125°C
20 GAIN
180
+
V = ±6V
180
CL = 20 pF
PHASE
158
90
80
RL = 10 M:
60
68
40
45
40
45
20 GAIN
23
20 GAIN
23
0
-20
100
RL = 1 M:
0
0
RL = 1 M:
1k
-23
1M
-20
100
1k
10k
PHASE (°)
PHASE
80
203
+
V = 5V
PHASE (°)
GAIN (dB)
RL = 1 M:
GAIN (dB)
CL = 20 pF
140
PHASE (°)
+
V = 2.7V
160
100k
PHASE (°)
180
0
10k
100k
-23
1M
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 17. Frequency Response vs RL
Figure 18. Frequency Response vs RL
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Typical Characteristics (continued)
At TJ = 25°C, unless otherwise specified.
GAIN (dB)
120
100
160
158
140
135
120
CL = 100 pF 113
PHASE
80
90
60
CL = 50 pF 68
CL = 200 pF
GAIN
180
RL = 1 M:
158
135
113
CL = 100 pF
PHASE
80
90
CL = 50 pF
60
CL = 200 pF
GAIN
20
68
CL = 20 pF 45
40
23
0
0
0
0
-20
100
-23
1M
-20
100
-23
1M
1k
10k
100k
FREQUENCY (Hz)
+
120
900
150
800
130
110
80
CL = 50 pF
60
CL = 20 pF
GAIN
30
10
1k
10k
700
600
500
400
300
200
0
0.1
-30
1M
100k
V = 5V
100
-10
0
-20
100
70
50
CL = 200 pF
40
20
90
CL = 100 pF
PHASE (°)
PHASE
100
100k
Figure 20. Frequency Response vs CL
170
VOLTAGE NOISE (nV/ Hz)
RL = 1 M:
140
10k
+
V = ±6V
160
1k
FREQUENCY (Hz)
Figure 19. Frequency Response vs CL
180
GAIN (dB)
203
+
V = 5V
100
CL = 20 pF 45
23
40
20
180
PHASE (°)
RL = 1 M:
140
203
180
GAIN (dB)
+
V = 2.7V
160
PHASE (°)
180
1
10
100
1k
10k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 22. Voltage Noise vs Frequency
Figure 21. Frequency Response vs CL
+
V = 5V
+
INPUT
250 mV/DIV
V = 5V
30 mV/DIV
INPUT
OUTPUT
200 Ps/DIV
200 Ps/DIV
Figure 23. Noninverting Small-Signal Pulse Response
12
OUTPUT
Figure 24. Noninverting Large-Signal Pulse Response
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Typical Characteristics (continued)
At TJ = 25°C, unless otherwise specified.
INPUT
500 mV/DIV
30 mV/DIV
INPUT
OUTPUT
+
OUTPUT
+
V = 5V
V = 5V
200 Ps/DIV
200 Ps/DIV
Figure 25. Inverting Small-Signal Pulse Response
Figure 26. Inverting Large-Signal Pulse Response
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7 Detailed Description
7.1 Overview
The LPV511 is a micropower operational amplifier that operates from a voltage supply range as wide as 2.7 V to
12 V with ensured specifications at 3 V, 5 V, and 12 V. The LPV511 exhibits an excellent speed-to-power ratio,
drawing only 880 nA of supply current with a bandwidth of 27 kHz.
7.2 Functional Block Diagram
VCC
CLASS AB
CONTROL
OUTPUT
INN
INP
GND
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7.3 Feature Description
The LPV511 has a rail-to-rail input which provides more flexibility for the system designer. As can be seen from
Functional Block Diagram, rail-to-rail input is achieved by using in parallel, one PNP differential pair and one
NPN differential pair. When the common mode input voltage (VCM) is near V+, the NPN pair is on and the PNP
pair is off. When VCM is near V−, the NPN pair is off and the PNP pair is on. When VCM is between V+ and V−,
internal logic decides how much current each differential pair will get. This special logic ensures stable and low
distortion amplifier operation within the entire common mode voltage range.
7.4 Device Functional Modes
7.4.1 Input Stage
Because both input stages have their own offset voltage (VOS) characteristic, the offset voltage of the LPV511
becomes a function of VCM. VOS has a crossover point at 1 V below V+. See the VOS vs VCM curve in Typical
Characteristics. Caution must be taken in situations where the input signal amplitude is comparable to the VOS
value and/or the design requires high accuracy. In these situations, it is necessary for the input signal to avoid
the crossover point.
The input bias current, IB will change in value and polarity as the input crosses the transition region. In addition,
parameters such as PSRR and CMRR which involve the input offset voltage will also be affected by changes in
VCM across the differential pair transition region.
Differential input voltage is the difference in voltage between the noninverting (+) input and the inverting input (−)
of the op amp. Due to the three series diodes across the two inputs, the absolute maximum differential input
voltage is ±2.1 V. This may not be a problem to most conventional op amp designs; however, designers must
avoid using the LPV511 as a comparator.
14
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Device Functional Modes (continued)
7.4.2 Output Stage
The LPV511 output voltage swing 100 mV from rails at 3-V supply, which provides the maximum possible
dynamic range at the output. This is particularly important when operating on low supply voltages.
The LPV511 maximum output voltage swing defines the maximum swing possible under a particular output load.
The LPV511 output swings 110 mV from the rail at 5-V supply with an output load of 100 kΩ.
7.4.3 Driving Capacitive Load
The LPV511 is internally compensated for stable unity gain operation, with a 27-kHz typical gain bandwidth.
However, the unity gain follower is the most sensitive configuration to capacitive load. Direct capacitive loading
reduces the phase margin of the op amp. When the output is required to drive a large capacitive load, greater
than 100 pF, a small series resistor at the output of the amplifier improves the phase margin (see Figure 27).
In Figure 27, the isolation resistor RISO and the load capacitor CL form a pole to increase stability by adding more
phase margin to the overall system. The desired performance depends on the value of RISO. The bigger the RISO
resistor value, the more stable VOUT will be. But the DC accuracy is degraded when the RISO gets bigger. If there
were a load resistor in Figure 27, the output voltage would be divided by RISO and the load resistor.
-
RISO
VOUT
VIN
+
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Figure 27. Resistive Isolation of Capacitive Load
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8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The LPV511 is fabricated with Texas Instrument's state-of-the-art VIP50C process.
8.2 Typical Applications
8.2.1 Battery Current Sensing
The rail-to-rail common mode input range and the very low quiescent current make the LPV511 ideal to use in
high-side and low-side battery current sensing applications. The high-side current sensing circuit in Figure 28 is
commonly used in a battery charger to monitor the charging current to prevent over charging. A sense resistor
RSENSE is connected to the battery directly.
V+
+
R1
2 NŸ
RSENSE
0.2 Ÿ
R2
2 NŸ
±
Q1
2N3906
+
VOUT
Load
R3
10 NŸ
ICHARGE
VOUT
RSENSE u R3
R1
u ICHARGE
1: u ICHARGE
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Figure 28. High Side Current Sensing
8.2.1.1 Design Requirements
The high-side current-sensing circuit (Figure 28) is commonly used in a battery charger to monitor charging
current to prevent overcharging. A sense resistor RSENSE is connected to the battery directly. This system
requires an op amp with rail-to-rail input. The LPV511 ideal for this application because its common-mode input
range extends up to the positive supply.
8.2.1.2 Detailed Design Procedure
As seen in Figure 28, the ICHARGE current flowing through sense resistor RSENSE develops a voltage drop equal to
VSENSE. The voltage at the negative sense point will now be less than the positive sense point by an amount
proportional to the VSENSE voltage.
The low-bias currents of the LPV511 cause little voltage drop through R2, so the negative input of the LPV551
amplifier is at essentially the same potential as the negative sense input.
The LPV511 will detect this voltage error between its inputs and servo the transistor base to conduct more
current through Q1, increasing the voltage drop across R1 until the LPV511 inverting input matches the
noninverting input. At this point, the voltage drop across R1 now matches VSENSE.
IG, a current proportional to ICHARGE, will flow according to the following relation to:
IG = VRSENSE / R1 = ( RSENSE × ICHARGE ) / R1
16
(1)
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Typical Applications (continued)
IG also flows through the gain resistor R3 developing a voltage drop equal to:
V3 = IG × R3 = ( VRSENSE / R1 ) × R3 = ( ( RSENSE × ICHARGE ) / R2 ) × R3
VOUT = (RSENSE × ICHARGE ) × G
(2)
where
•
G = R3 / R1
(3)
8.2.1.3 Application Curve
Figure 29 shows the results of the example current sense circuit.
5
VOUT (V)
4
3
2
1
0
0
1
2
3
4
5
ICHARGE (A)
C001
The error after 4 V where transistor Q1 runs out of headroom and saturates, limiting the upper output swing.
Figure 29. Current Sense Amplifier Results
8.2.2 Summing Amplifier
The LPV511 operational amplifier is a perfect fit in a summing amplifier circuit because of the rail-to-rail input and
output and the sub-micro Amp quiescent current. In this configuration, the amplifier outputs the sum of the three
input voltages.
Equation 4 shows the ratio of the sum and the output voltage is defined using feedback and input resistors.
©
§
¨
¨
©
§
VOUT = RF ¨¨
VREF - V1 VREF - V2 VREF - V3
+
+
+ VREF
R1
R2
R3
(4)
R1
V1
RF
R2
V2
R3
V3
VREF
VOUT
+
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Figure 30. Summing Amplifier Circuit
8.3 Dos and Don'ts
Do properly bypass the power supplies.
Do add series resistence to the output when driving capacitive loads, particularly cables, Muxes and ADC inputs.
Do add series current limiting resistors and external Schottky clamp diodes if input voltage is expected to exceed
the supplies. Limit the current to 1 mA or less (1 kΩ per volt).
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9 Power Supply Recommendations
The LPV80x is specified for operation from 1.6 V to 5.5 V (±0.8 V to ±2.75 V) over a –40°C to 125°C temperature
range. Parameters that can exhibit significant variance with regard to operating voltage or temperature are
presented in the Electrical Characteristics: 3 V.
CAUTION
Supply voltages larger than 13.2 V can permanently damage the device.
For proper operation, the power supplies bust be properly decoupled. For decoupling the supply lines it is
suggested that 100 nF capacitors be placed as close as possible to the operational amplifier power supply pins.
For single supply, place a capacitor between V+ and V– supply leads. For dual supplies, place one capacitor
between V+ and ground, and one capacitor between V– and ground.
Low bandwidth nanopower devices do not have good high frequency (> 1 kHz) AC PSRR rejection against highfrequency switching supplies and other 1 kHz and above noise sources, so extra supply filtering is recommended
if kilohertz or above noise is expected on the power supply lines.
10 Layout
10.1 Layout Guidelines
•
•
•
•
•
The V+ pin should be bypassed to ground with a low-ESR capacitor.
The optimum placement is closest to the V+ and ground pins.
Take care to minimize the loop area formed by the bypass capacitor connection between V+ and ground.
The ground pin should be connected to the PCB ground plane at the pin of the device.
The feedback components should be placed as close to the device as possible minimizing strays.
10.2 Layout Example
Figure 31. SOT-23 Layout Example
18
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11 Device and Documentation Support
11.1 Device Support
11.1.1 Development Support
LPV511 PSPICE Model, http://www.ti.com/lit/zip/snom023
TINA-TI SPICE-Based Analog Simulation Program, http://www.ti.com/tool/tina-ti
DIP Adapter Evaluation Module, http://www.ti.com/tool/dip-adapter-evm
TI Universal Operational Amplifier Evaluation Module, http://www.ti.com/tool/opampevm
TI Filterpro Software, http://www.ti.com/tool/filterpro
11.2 Documentation Support
11.2.1 Related Documentation
• Handbook of Operational Amplifier Applications (SBOA092)
• Compensate Transimpedance Amplifiers Intuitively (SBOA055)
• Circuit Board Layout Techniques (SLOA089)
• AN-1803 Design Considerations for a Transimpedance Amplifier (SNOA515)
11.3 Community Resource
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
11.4 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
11.5 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
11.6 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
LPV511MG/NOPB
ACTIVE
SC70
DCK
5
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
A91
LPV511MGX/NOPB
ACTIVE
SC70
DCK
5
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
A91
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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