LSF0108-Q1
SDLS967D – MAY 2016 – REVISED APRIL 2021
LSF0108-Q1 Automotive 8-Channel Multi-Voltage Level Translator
1 Features
2 Applications
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Qualified for automotive applications
AEC-Q100 qualified with the following results:
– Device HBM ESD classification level 2000-V
– Device CDM ESD classification level 1000-V
Provides bidirectional voltage translation with no
direction pin
Supports up to 100 MHz up translation and
greater than 100 MHz down translation at ≤ 30-pF
capacitive load and up to 40 MHz up or down
translation at 50-pF capacitive load
Supports hot insertion
Allow bidirectional voltage level translation
between
– 0.95 V ↔ 1.8 V, 2.5 V, 3.3 V, 5 V
– 1.2 V ↔ 1.8 V, 2.5 V, 3.3 V, 5 V
– 1.8 V ↔ 2.5 V, 3.3 V, 5 V
– 2.5 V ↔ 3.3 V, 5 V
– 3.3 V ↔ 5 V
Low standby current
5-V tolerance I/O port to support TTL
Low ron provides less signal distortion
High-impedance I/O pins for EN = low
Flow-through pinout for easy PCB trace routing
Latch-up performance exceeds 100 mA per JESD
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–40°C to +125°C operating temperature range
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GPIO, MDIO, PMBus, SMBus, SDIO, UART, I2C,
and other interfaces in telecom infrastructure
Infotainment and cluster
Body electronics and lighting
Hybrid, electric and powertrain systems
Passive safety
ADAS
3 Description
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Supports up to 100 MHz up translation and greater
than 100 MHz down translation at 100 MHz given the correct conditions. The maximum frequency is dependent upon the loading of the
application. The LSF0108-Q1 behaves like a standard switch where the bandwidth of the device is dictated by
the on resistance and on capacitance of the device.
Figure 8-2 shows a bandwidth measurement of the LSF0108-Q1 using a two-port network analyzer.
0
–1
–2
Gain (dB)
–3
–4
–5
–6
–7
–8
–9
0.1
1
10
100
Frequency (MHz)
1000
Figure 8-2. 3-dB Bandwidth
The 3-dB point of the LSF0108-Q1 is ≈ 600 MHz; however, this measurement is an analog type of measurement.
For digital applications the signal should not degrade up to the fifth harmonic of the digital signal. The frequency
bandwidth should be at least five times the maximum digital clock rate. This component of the signal is very
important in determining the overall shape of the digital signal. In the case of the LSF0108-Q1, a digital clock
frequency of greater than 100 MHz can be achieved.
The LSF0108-Q1 does not provide any drive capability. Therefore higher frequency applications will require
higher drive strength from the host side. No pull-up resistor is needed on the host side (3.3 V) if the LSF0108-Q1
is being driven by standard CMOS totem pole output driver. Ideally, it is best to minimize the trace length from
the LSF0108-Q1 on the sink side (1.8 V) to minimize signal degradation.
All fast edges have an infinite spectrum of frequency components; however, there is an inflection (or knee) in the
frequency spectrum of fast edges where frequency components higher than ƒknee are insignificant in determining
the shape of the signal.
12
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SDLS967D – MAY 2016 – REVISED APRIL 2021
To calculate the maximum practical frequency component, or the knee frequency (fknee), use Equation 2 and
Equation 3:
ƒknee = 0.5 / RT (10 – 80%)
(2)
ƒknee = 0.4 / RT (20 – 80%)
(3)
For signals with rise time characteristics based on 10% to 90% thresholds, fknee is equal to 0.5 divided by the
rise time of the signal. For signals with rise time characteristics based on 20% to 80% thresholds, which is very
common in many of today's device specifications, ƒknee is equal to 0.4 divided by the rise time of the signal.
Some guidelines to follow that will help maximize the performance of the device:
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Keep trace length to a minimum by placing the LSF0108-Q1 close to the I2C output of the processor.
The trace length should be less than half the time of flight to reduce ringing and line reflections or nonmonotonic behavior in the switching region.
To reduce overshoots, a pull-up resistor can be added on the 1.8 V side; be aware that a slower fall time is to
be expected.
8.2.1.3 Application Curves
4
Input
Output
3
Input (3.3V)
Voltage (V)
2
Output (1.0V)
1
0
-1
0
50
100
150
200
250
300
350
400
450
500
Time (ns)
.
.
Figure 8-3. Captured Waveform From Above
Set-Up (1.8 V to 3.3 V at 2.5 MHz)
I2C
Figure 8-4. Captured Waveform From Above MDIO
Setup
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SDLS967D – MAY 2016 – REVISED APRIL 2021
8.2.2 Multiple Voltage Translation in Single Device
Vpu= 5.0V
Vref(A) = 1.8V
Vref_B
Vref_A
200KΩ
LSF0108
1.8V
Vcc
GPIO
A1
A3
A4
A6
Rpu
Rpu
SCL
B6
SW
SDA
GPIO
B5
SW
SCL
Vcc
GPIO
B4
SW
A5
Vpu= 3.3V
GPIO
B3
SW
GPIO
Vcc
GPIO
B2
SW
GPIO
Rpu
B1
SW
A2
GPIO
EN
SDA
Rpu
Rpu
MDIO
SW
MDIO
MDC
SW
MDC
8.2.2.1 Design Requirements
Refer to Section 8.2.1.1.
8.2.2.2 Detailed Design Procedure
Refer to Section 8.2.1.2.
8.2.2.3 Application Curve
3.5
Input
Output
3
Voltage (V)
2.5
2
1.5
1
0.5
0
-0.5
0
2
4
6
8
10 12
Time (ns)
14
16
18
20
22
D012
Figure 8-5. Translation Down (3.3 to 1.8 V) at 150 MHz
14
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Product Folder Links: LSF0108-Q1
LSF0108-Q1
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SDLS967D – MAY 2016 – REVISED APRIL 2021
9 Power Supply Recommendations
There are no power sequence requirements for the LSF0108-Q1. For enable and reference voltage guidelines,
please refer to the Section 8.2.1.1.1.
10 Layout
10.1 Layout Guidelines
Because the LSF0108-Q1 is a switch-type level translator, the signal integrity is highly related with a pull-up
resistor and PCB capacitance condition.
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Short signal trace as possible to reduce capacitance and minimize stub from pull-up resistor.
Place LSF close to high voltage side.
Select the appropriate pull-up resistor that applies to translation levels and driving capability of transmitter.
10.2 Layout Example
LSF0108-Q1
GND
1
20
EN
Vref_A
2
19
Vref_B
A1
3
18
B1
A2
4
17
B2
A8
10
11
Short Signal Trace as possible
B8
Minimize Stub as possible
Figure 10-1. Short Trace Layout
TP1
SD Controller
(1.8 V IO)
SDIO Controller
(3.3 V IO)
LSF0108
SDIO level translator
Device PCB
TP2
Figure 10-2. Device Placement
3.5
3.5
Input
Output
Input
Output
3
2.5
2.5
2
2
Voltage (V)
Voltage (V)
3
1.5
1
0.5
1.5
1
0.5
0
0
-0.5
-0.5
0
2.5
5
7.5
10
12.5 15
Time (ns)
17.5
20
22.5
25
0
D011
3
6
9
12
15
18
Time (ns)
21
24
27
30
D010
Figure 10-3. Waveform From TP1 (Pull-Up
Figure 10-4. Waveform From TP2 (Pull-Up
Resistor: 160-Ω and 50-pF Capacitance 3.3 V to 1.8 Resistor: 160-Ω and 50-pF Capacitance 1.8 V to 3.3
V at 100 MHz)
V at 100 MHz)
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SDLS967D – MAY 2016 – REVISED APRIL 2021
11 Device and Documentation Support
11.1 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on
Subscribe to updates to register and receive a weekly digest of any product information that has changed. For
change details, review the revision history included in any revised document.
11.2 Support Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
11.3 Trademarks
TI E2E™ is a trademark of Texas Instruments.
All trademarks are the property of their respective owners.
11.4 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
11.5 Glossary
TI Glossary
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the mostcurrent data available for the designated device. This data is subject to change without notice and revision of this
document. For browser-based versions of this data sheet, see the left-hand navigation pane.
16
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Product Folder Links: LSF0108-Q1
PACKAGE OPTION ADDENDUM
www.ti.com
20-Apr-2021
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
LSF0108QPWRQ1
ACTIVE
TSSOP
PW
20
2000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
LSF0108Q
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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