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MAX3232
SLLS410N – JANUARY 2000 – REVISED JUNE 2017
MAX3232 3-V to 5.5-V Multichannel RS-232 Line Driver/Receiver
With ±15-kV ESD Protection
1 Features
3 Description
•
The MAX3232 device consists of two line drivers, two
line receivers, and a dual charge-pump circuit with
±15-kV ESD protection terminal to terminal (serialport connection terminals, including GND). The
device meets the requirements of TIA/EIA-232-F and
provides the electrical interface between an
asynchronous communication controller and the
serial-port connector. The charge pump and four
small external capacitors allow operation from a
single 3-V to 5.5-V supply. The devices operate at
data signaling rates up to 250 kbit/s and a maximum
of 30-V/μs driver output slew rate.
1
•
•
•
•
•
•
•
•
RS-232 Bus-Terminal ESD Protection Exceeds
±15 kV Using Human-Body Model (HBM)
Meets or Exceeds the Requirements of TIA/EIA232-F and ITU V.28 Standards
Operates With 3-V to 5.5-V VCC Supply
Operates up to 250 kbit/s
Two Drivers and Two Receivers
Low Supply Current: 300 μA Typical
External Capacitors: 4 × 0.1 μF
Accepts 5-V Logic Input With 3.3-V Supply
Alternative High-Speed Terminal-Compatible
Devices (1 Mbit/s)
– SN65C3232 (–40°C to 85°C)
– SN75C3232 (0°C to 70°C)
Device Information(1)
PART NUMBER
PACKAGE (PIN)
BODY SIZE
SOIC (16)
9.90 mm × 3.91 mm
SSOP (16)
6.20 mm × 5.30 mm
2 Applications
SOIC (16)
10.30 mm × 7.50
mm
•
•
•
•
•
•
TSSOP (16)
5.00 mm × 4.40 mm
MAX3232
Battery-Powered Systems
PDAs
Notebooks
Laptops
Palmtop PCs
Hand-Held Equipment
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Simplified Schematic
3.3 V, 5 V
POWER
2
DIN
2
TX
RS232
2
ROUT
DOUT
RX
2
RIN
RS232
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
MAX3232
SLLS410N – JANUARY 2000 – REVISED JUNE 2017
www.ti.com
Table of Contents
1
2
3
4
5
6
7
8
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
6.1
6.2
6.3
6.4
6.5
6.6
6.7
6.8
6.9
4
4
4
5
5
5
5
6
6
Absolute Maximum Ratings .....................................
ESD Ratings..............................................................
Recommended Operating Conditions ......................
Thermal Information ..................................................
Electrical Characteristics — Device .........................
Electrical Characteristics — Driver ..........................
Electrical Characteristics — Receiver.......................
Switching Characteristics ..........................................
Typical Characteristics ..............................................
Parameter Measurement Information .................. 7
Detailed Description .............................................. 8
8.1 Overview ................................................................... 8
8.2 Functional Block Diagram ......................................... 8
8.3 Feature Description................................................... 8
8.4 Device Functional Modes.......................................... 9
9
Application and Implementation ........................ 10
9.1 Application Information............................................ 10
9.2 Standard Application ............................................... 10
10 Power Supply Recommendations ..................... 11
11 Layout................................................................... 12
11.1 Layout Guidelines ................................................. 12
11.2 Layout Example .................................................... 12
12 Device and Documentation Support ................. 13
12.1
12.2
12.3
12.4
12.5
Receiving Notification of Documentation Updates
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
13
13
13
13
13
13 Mechanical, Packaging, and Orderable
Information ........................................................... 13
4 Revision History
Changes from Revision M (April 2017) to Revision N
•
Changed the Thermal Information table ................................................................................................................................. 5
Changes from Revision L (March 2017) to Revision M
•
Page
Changed pin 16 (VCC) in Figure 6 ........................................................................................................................................ 10
Changes from Revision J (January 2014) to Revision K
•
Page
Changed From: "±" To: "to" in the VCC column of Table 3.................................................................................................... 11
Changes from Revision K (January 2015) to Revision L
•
Page
Page
Added Applications, Device Information table, Pin Functions table, ESD Ratings table, Thermal Information table,
Typical Characteristics, Feature Description section, Device Functional Modes, Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section. ................................................................................................. 1
Changes from Revision I (January 2004) to Revision J
Page
•
Updated document to new TI data sheet format - no specification changes. ........................................................................ 1
•
Deleted Ordering Information table. ....................................................................................................................................... 1
2
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SLLS410N – JANUARY 2000 – REVISED JUNE 2017
5 Pin Configuration and Functions
D, DB, DW, or PW Package
16-Pin SOIC, SSOP, or TSSOP
Top View
C1+
1
16
VCC
V+
2
15
GND
C1±
3
14
DOUT1
C2+
4
13
RIN1
C2±
5
12
ROUT1
V±
6
11
DIN1
DOUT2
7
10
DIN2
RIN2
8
9
ROUT2
Not to scale
Pin Functions
PIN
NAME
NO.
C1+
1
V+
C1–
TYPE
DESCRIPTION
—
Positive lead of C1 capacitor
2
O
Positive charge pump output for storage capacitor only
3
—
Negative lead of C1 capacitor
C2+
4
—
Positive lead of C2 capacitor
C2–
5
—
Negative lead of C2 capacitor
V–
6
O
Negative charge pump output for storage capacitor only
DOUT2
7
O
RS232 line data output (to remote RS232 system)
DOUT1
14
O
RS232 line data output (to remote RS232 system)
RIN2
8
I
RS232 line data input (from remote RS232 system)
RIN1
13
I
RS232 line data input (from remote RS232 system)
ROUT2
9
O
Logic data output (to UART)
ROUT1
12
O
Logic data output (to UART)
DIN2
10
I
Logic data input (from UART)
DIN1
11
I
Logic data input (from UART)
GND
15
—
Ground
VCC
16
—
Supply Voltage, Connect to external 3 V to 5.5 V power supply
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SLLS410N – JANUARY 2000 – REVISED JUNE 2017
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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
Supply voltage range (2)
VCC
(2)
V+
Positive output supply voltage range
V–
Negative output supply voltage range (2)
V+ – V–
Supply voltage difference (2)
VI
Input voltage range
VO
Output voltage range
TJ
Operating virtual junction temperature
Tstg
Storage temperature range
(1)
(2)
MIN
MAX
–0.3
6
V
–0.3
7
V
–7
0.3
V
13
V
Drivers
–0.3
6
Receivers
–25
25
–13.2
13.2
–0.3
VCC + 0.3
Drivers
Receivers
–65
UNIT
V
V
150
°C
150
°C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltages are with respect to network GND.
6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001
RIN , DOUT, and GND pins (1)
15000
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001
All other pins (1)
3000
Charged device model (CDM), per JEDEC specification JESD22-C101,
all pins (2)
1000
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
(see Figure 6) (1)
VCC = 3.3 V
MIN
NOM
MAX
3
3.3
3.6
4.5
5
5.5
VCC
Supply voltage
VIH
Driver high-level input voltage
DIN
VIL
Driver low-level input voltage
DIN
Driver input voltage
DIN
0
5.5
Receiver input voltage
RIN
–25
25
0
70
–40
85
VI
TA
(1)
4
Operating free-air temperature
VCC = 5 V
VCC = 3.3 V
VCC = 5 V
2
MAX3232I
V
V
2.4
0.8
MAX3232C
UNIT
V
V
°C
Test conditions are C1–C4 = 0.1 μF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 μF, C2–C4 = 0.33 μF at VCC = 5 V ± 0.5 V.
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6.4 Thermal Information
MAX3232
THERMAL METRIC (1)
SOIC (D)
SSOP (DB)
SOIC (DW)
TSSOP (PW)
UNIT
16 PINS
RθJA
78.1
93.5
66.6
101.1
°C/W
RθJC(top) Junction-to-case (top) thermal resistance
38.5
45.8
32.4
32.9
°C/W
RθJB
Junction-to-board thermal resistance
36.3
44.6
31.9
47.5
°C/W
ψJT
Junction-to-top characterization parameter
8.0
11.1
8.4
1.9
°C/W
ψJB
Junction-to-board characterization parameter
36.0
44
31.5
46.9
°C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance
n/a
n/a
n/a
n/a
°C/W
(1)
Junction-to-ambient thermal resistance
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6.5 Electrical Characteristics — Device
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) (1) (see Figure 6)
PARAMETER
ICC
(1)
(2)
TEST CONDITIONS
Supply current
No load,
MIN TYP (2)
MAX
0.3
1
VCC = 3.3 V to 5 V
UNIT
mA
Test conditions are C1–C4 = 0.1 μF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 μF, C2–C4 = 0.33 μF at VCC = 5 V ± 0.5 V.
All typical values are at VCC = 3.3 V or VCC = 5 V, and TA = 25°C.
6.6 Electrical Characteristics — Driver
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) (1) (see Figure 6)
PARAMETER
TEST CONDITIONS
MIN
TYP (2)
VOH
High-level output voltage
DOUT at RL = 3 kΩ to GND,
DIN = GND
5
5.4
VOL
Low-level output voltage
DOUT at RL = 3 kΩ to GND,
DIN = VCC
–5
–5.4
IIH
High-level input current
VI = VCC
IIL
Low-level input current
VI at GND
IOS (3)
Short-circuit output current
rO
Output resistance
(1)
(2)
(3)
VCC = 3.6 V
VO = 0 V
VCC = 5.5 V
VO = 0 V
VCC, V+, and V– = 0 V
VO = ±2 V
300
MAX
UNIT
V
V
±0.01
±1
μA
±0.01
±1
μA
±35
±60
mA
Ω
10M
Test conditions are C1–C4 = 0.1 μF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 μF, C2–C4 = 0.33 μF at VCC = 5 V ± 0.5
All typical values are at VCC = 3.3 V or VCC = 5 V, and TA = 25°C.
Short-circuit durations should be controlled to prevent exceeding the device absolute power dissipation ratings, and not more than one
output should be shorted at a time.
6.7 Electrical Characteristics — Receiver
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) (1) (see Figure 6)
PARAMETER
TEST CONDITIONS
VOH
High-level output voltage
IOH = –1 mA
VOL
Low-level output voltage
IOL = 1.6 mA
VIT+
Positive-going input threshold voltage
VIT–
Negative-going input threshold voltage
Vhys
Input hysteresis (VIT+ – VIT–)
rI
Input resistance
(1)
(2)
MIN
TYP (2)
VCC – 0.6
VCC – 0.1
MAX
V
0.4
VCC = 3.3 V
1.5
2.4
VCC = 5 V
1.8
2.4
VCC = 3.3 V
0.6
1.2
VCC = 5 V
0.8
1.5
3
5
V
V
V
0.3
VI = ±3 V to ±25 V
UNIT
V
7
kΩ
Test conditions are C1–C4 = 0.1 μF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 μF, C2–C4 = 0.33 μF at VCC = 5 V ± 0.5 V.
All typical values are at VCC = 3.3 V or VCC = 5 V, and TA = 25°C.
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6.8 Switching Characteristics
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) (1) (see Figure 6)
PARAMETER
TEST CONDITIONS
Maximum data rate
RL = 3 kΩ,
CL = 1000 pF
One DOUT switching,
See Figure 3
tsk(p)
Driver Pulse skew (3)
RL = 3 kΩ to 7 kΩ,
SR(tr)
Slew rate, transition region
(see Figure 3)
RL = 3 kΩ to 7 kΩ,
VCC = 5 V
tPLH®)
Propagation delay time, low- to highlevel output
tPHL®)
Propagation delay time, high- to lowlevel output
tsk(p)
Receiver Pulse skew (1)
(1)
(2)
(3)
MIN
TYP (2)
150
250
kbit/s
300
ns
CL = 150 to 2500 pF
See Figure 4
MAX
CL = 150 to 1000 pF
6
30
CL = 150 to 2500 pF
4
30
UNIT
V/μs
300
CL = 150 pF
ns
300
300
Test conditions are C1–C4 = 0.1 μF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 μF, C2–C4 = 0.33 μF at VCC = 5 V ± 0.5 V.
All typical values are at VCC = 3.3 V or VCC = 5 V, and TA = 25°C.
Pulse skew is defined as |tPLH − tPHL| of each channel of the same device.
6.9 Typical Characteristics
VCC = 3.3 V
6
1
VOH
0
5
±1
VOL (V)
VOH (V)
4
3
±2
±3
2
±4
1
±5
0
0
5
10
15
Output Current (mA)
20
25
0
5
10
15
Output Current (mA)
C001
Figure 1. DOUT VOH vs Load Current, Both Drivers Loaded
6
VOL
±6
20
25
C001
Figure 2. DOUT VOL vs Load Current, Both Drivers Loaded
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7 Parameter Measurement Information
3V
Input
Generator
(see Note B)
1.5 V
RS-232
Output
50 Ω
RL
1.5 V
0V
tTHL
CL
(see Note A)
tTLH
3V
Output
−3 V
TEST CIRCUIT
SR(tr) =
t
THL
6V
or t
VOH
3V
−3 V
VOL
VOLTAGE WAVEFORMS
TLH
A.
CL includes probe and jig capacitance.
B.
The pulse generator has the following characteristics: PRR = 250 kbit/s, ZO = 50 Ω, 50% duty cycle, tr ≤ 10 ns,
tf ≤ 10 ns.
Figure 3. Driver Slew Rate
3V
Generator
(see Note B)
RS-232
Output
50 Ω
RL
1.5 V
Input
1.5 V
0V
CL
(see Note A)
tPHL
tPLH
VOH
50%
50%
Output
VOL
TEST CIRCUIT
VOLTAGE WAVEFORMS
A.
CL includes probe and jig capacitance.
B.
The pulse generator has the following characteristics: PRR = 250 kbit/s, ZO = 50 Ω, 50% duty cycle, tr ≤ 10 ns,
tf ≤ 10 ns.
Figure 4. Driver Pulse Skew
3V
Input
Generator
(see Note B)
1.5 V
1.5 V
−3 V
Output
50 Ω
tPHL
CL
(see Note A)
tPLH
VOH
50%
Output
50%
VOL
TEST CIRCUIT
VOLTAGE WAVEFORMS
A.
CL includes probe and jig capacitance.
B.
The pulse generator has the following characteristics: ZO = 50 Ω, 50% duty cycle, tr ≤ 10 ns, tf ≤ 10 ns.
Figure 5. Receiver Propagation Delay Times
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8 Detailed Description
8.1 Overview
The MAX3232 device consists of two line drivers, two line receivers, and a dual charge-pump circuit with ±15-kV
ESD protection terminal to terminal (serial-port connection terminals, including GND). The device meets the
requirements of TIA/EIA-232-F and provides the electrical interface between an asynchronous communication
controller and the serial-port connector. The charge pump and four small external capacitors allow operation from
a single 3-V to 5.5-V supply. The device operates at data signaling rates up to 250 kbit/s and a maximum of 30V/μs driver output slew rate. Outputs are protected against shorts to ground.
8.2 Functional Block Diagram
3.3 V, 5 V
POWER
2
DIN
2
TX
RS232
2
ROUT
DOUT
RX
2
RIN
RS232
8.3 Feature Description
8.3.1 Power
The power block increases, inverts, and regulates voltage at V+ and V- pins using a charge pump that requires
four external capacitors.
8.3.2 RS232 Driver
Two drivers interface standard logic level to RS232 levels. Both DIN inputs must be valid high or low.
8.3.3 RS232 Receiver
Two receivers interface RS232 levels to standard logic levels. An open input will result in a high output on ROUT.
Each RIN input includes an internal standard RS232 load.
8
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8.4 Device Functional Modes
Table 1. Each Driver (1)
(1)
INPUT
DIN
OUTPUT
DOUT
L
H
H
L
H = high level, L = low level
Table 2. Each Receiver (1)
(1)
INPUT
RIN
OUTPUT
ROUT
L
H
H
L
Open
H
H = high level, L = low level,
Open = input disconnected or
connected driver off
8.4.1 VCC powered by 3 V to 5.5 V
The device will be in normal operation.
8.4.2 VCC unpowered, VCC = 0 V
When MAX3232 is unpowered, it can be safely connected to an active remote RS232 device.
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9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
For proper operation, add capacitors as shown in Figure 6.
9.2 Standard Application
ROUT and DIN connect to UART or general purpose logic lines. RIN and DOUT lines connect to a RS232
connector or cable.
3.3 V / 5 V
1
+
C1
−
2
†+
C3
−
3
4
C1+
VCC 16
C BYPASS = 0.1 μF
V+
GND
14
DOUT1
C1−
13
C2+
+
C2
15
RIN1
5 kΩ
−
5 C2−
12
6
C4
−
V−
11
ROUT1
DIN1
+
DOUT2
RIN2
7
10
8
9
DIN2
ROUT2
5 kΩ
† C3 can be connected to VCC or GND.
A.
Resistor values shown are nominal.
B.
Nonpolarized ceramic capacitors are acceptable. If polarized tantalum or electrolytic capacitors are used, they should
be connected as shown.
Figure 6. Typical Operating Circuit and Capacitor Values
10
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Standard Application (continued)
9.2.1 Design Requirements
•
•
Recommended VCC is 3.3 V or 5 V. 3 V to 5.5 V is also possible
Maximum recommended bit rate is 250 kbit/s.
Table 3. VCC vs Capacitor Values
VCC
C1
3.3 V to 0.3 V
0.1 µF
C2, C3, C4
0.1 µF
5 V to 0.5 V
0.047 µF
0.33 µF
3 V to 5.5 V
0.1 µF
0.47 µF
9.2.2 Detailed Design Procedure
•
•
All DIN, FORCEOFF and FORCEON inputs must be connected to valid low or high logic levels.
Select capacitor values based on VCC level for best performance.
Voltage (V)
9.2.3 Application Curves
6
5
4
3
2
1
0
±1
±2
±3
±4
±5
±6
±7
±8
±9
DIN
DOUT to RIN
ROUT
0
1
2
3
4
5
6
7
Time ( s)
8
9
10
C001
VCC = 3.3 V
Figure 7. 250 kbit/s Driver to Receiver Loopback Timing Waveform
10 Power Supply Recommendations
VCC should be between 3 V and 5.5 V. Charge pump capacitors should be chosen using table in Figure 6.
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11 Layout
11.1 Layout Guidelines
Keep the external capacitor traces short. This is more important on C1 and C2 nodes that have the fastest rise
and fall times.
11.2 Layout Example
Ground
C3
C1
1 C1+
VCC 16
2 V+
GND 15
3 C1–
DOUT1 14
4 C2+
RIN1 13
5 C2–
ROUT1 12
VCC
0.1µF
Ground
C2
Ground
6 V–
DIN1 11
7 DOUT2
DIN2 10
C4
8 RIN2
ROUT2 9
Figure 8. Layout Diagram
12
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12 Device and Documentation Support
12.1 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
12.2 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
12.3 Trademarks
E2E is a trademark of Texas Instruments.
12.4 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
12.5 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical packaging and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser based versions of this data sheet, refer to the left hand navigation.
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Copyright © 2000–2017, Texas Instruments Incorporated
Product Folder Links: MAX3232
13
PACKAGE OPTION ADDENDUM
www.ti.com
24-Aug-2018
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
MAX3232CD
ACTIVE
SOIC
D
16
40
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
MAX3232C
MAX3232CDB
ACTIVE
SSOP
DB
16
80
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
MA3232C
MAX3232CDBE4
ACTIVE
SSOP
DB
16
80
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
MA3232C
MAX3232CDBG4
ACTIVE
SSOP
DB
16
80
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
MA3232C
MAX3232CDBR
ACTIVE
SSOP
DB
16
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
MA3232C
MAX3232CDBRE4
ACTIVE
SSOP
DB
16
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
MA3232C
MAX3232CDE4
ACTIVE
SOIC
D
16
40
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
MAX3232C
MAX3232CDG4
ACTIVE
SOIC
D
16
40
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
MAX3232C
MAX3232CDR
ACTIVE
SOIC
D
16
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU | CU SN
Level-1-260C-UNLIM
0 to 70
MAX3232C
MAX3232CDRE4
ACTIVE
SOIC
D
16
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
MAX3232C
MAX3232CDRG4
ACTIVE
SOIC
D
16
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
MAX3232C
MAX3232CDW
ACTIVE
SOIC
DW
16
40
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
MAX3232C
MAX3232CDWG4
ACTIVE
SOIC
DW
16
40
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
MAX3232C
MAX3232CDWR
ACTIVE
SOIC
DW
16
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU | CU SN
Level-1-260C-UNLIM
0 to 70
MAX3232C
MAX3232CDWRE4
ACTIVE
SOIC
DW
16
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
MAX3232C
MAX3232CDWRG4
ACTIVE
SOIC
DW
16
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
MAX3232C
MAX3232CPW
ACTIVE
TSSOP
PW
16
90
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
MA3232C
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
24-Aug-2018
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
MAX3232CPWE4
ACTIVE
TSSOP
PW
16
90
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
MA3232C
MAX3232CPWG4
ACTIVE
TSSOP
PW
16
90
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
MA3232C
MAX3232CPWR
ACTIVE
TSSOP
PW
16
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU | CU SN
Level-1-260C-UNLIM
0 to 70
MA3232C
MAX3232CPWRE4
ACTIVE
TSSOP
PW
16
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
MA3232C
MAX3232CPWRG4
ACTIVE
TSSOP
PW
16
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
MA3232C
MAX3232ID
ACTIVE
SOIC
D
16
40
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 85
MAX3232I
MAX3232IDB
ACTIVE
SSOP
DB
16
80
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 85
MB3232I
MAX3232IDBE4
ACTIVE
SSOP
DB
16
80
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 85
MB3232I
MAX3232IDBR
ACTIVE
SSOP
DB
16
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 85
MB3232I
MAX3232IDBRE4
ACTIVE
SSOP
DB
16
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 85
MB3232I
MAX3232IDE4
ACTIVE
SOIC
D
16
40
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 85
MAX3232I
MAX3232IDG4
ACTIVE
SOIC
D
16
40
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 85
MAX3232I
MAX3232IDR
ACTIVE
SOIC
D
16
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU | CU SN
Level-1-260C-UNLIM
-40 to 85
MAX3232I
MAX3232IDRE4
ACTIVE
SOIC
D
16
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 85
MAX3232I
MAX3232IDRG4
ACTIVE
SOIC
D
16
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 85
MAX3232I
MAX3232IDW
ACTIVE
SOIC
DW
16
40
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 85
MAX3232I
MAX3232IDWR
ACTIVE
SOIC
DW
16
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU | CU SN
Level-1-260C-UNLIM
-40 to 85
MAX3232I
MAX3232IDWRE4
ACTIVE
SOIC
DW
16
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 85
MAX3232I
Addendum-Page 2
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
24-Aug-2018
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
MAX3232IDWRG4
ACTIVE
SOIC
DW
16
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 85
MAX3232I
MAX3232IPW
ACTIVE
TSSOP
PW
16
90
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 85
MB3232I
MAX3232IPWR
ACTIVE
TSSOP
PW
16
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU | CU SN
Level-1-260C-UNLIM
-40 to 85
MB3232I
MAX3232IPWRE4
ACTIVE
TSSOP
PW
16
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 85
MB3232I
MAX3232IPWRG4
ACTIVE
TSSOP
PW
16
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 85
MB3232I
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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