MSP430FR6007, MSP430FR6005
MSP430FR6007,
MSP430FR6005
SLASEV3A – MARCH
2020 – REVISED
DECEMBER 2020
SLASEV3A – MARCH 2020 – REVISED DECEMBER 2020
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MSP430FR600x Ultrasonic Sensing MSP430™ Microcontrollers
for Water‑Metering Applications
1 Features
•
•
•
•
•
•
•
Best-in-class ultrasonic water-flow measurement
with ultra-low power consumption
– 74-dB SNR due to jitter; that is,
limited by ADC performance.
2
3
dfDCO/dT
DCO temperature drift(1)
(1)
(2)
40
48%
3.0 V
0.01
ns
%/°C
Calculated using the box method: (MAX(–40°C to 85°C) – MIN(–40°C to 85°C)) / MIN(–40°C to 85°C) / (85°C – (–40°C))
After a wakeup from LPM1, LPM2, LPM3, or LPM4, the DCO frequency fDCO might exceed the specified frequency range for a few
clock cycles by up to 5% before settling to the specified steady state frequency range.
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SLASEV3A – MARCH 2020 – REVISED DECEMBER 2020
8.13.3.4 Internal Very-Low-Power Low-Frequency Oscillator (VLO)
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
IVLO
Current consumption
fVLO
VLO frequency
Measured at ACLK
MIN
TYP
MAX
100
6
UNIT
nA
9.4
14
kHz
dfVLO/dT
VLO frequency temperature drift
Measured at ACLK(1)
0.2
%/°C
dfVLO/dVCC
VLO frequency supply voltage drift
Measured at ACLK(2)
0.7
%/V
fVLO,DC
Duty cycle
Measured at ACLK
(1)
(2)
40%
50%
60%
Calculated using the box method: (MAX(–40°C to 85°C) – MIN(–40°C to 85°C)) / MIN(–40°C to 85°C) / (85°C – (–40°C))
Calculated using the box method: (MAX(1.8 V to 3.6 V) – MIN(1.8 V to 3.6 V)) / MIN(1.8 V to 3.6 V) / (3.6 V – 1.8 V)
8.13.3.5 Module Oscillator (MODOSC)
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
IMODOSC
Current consumption
fMODOSC
MODOSC frequency
fMODOSC/dT
MODOSC frequency temperature drift(1)
fMODOSC/dVCC
MODOSC frequency supply voltage drift(2)
DCMODOSC
(1)
(2)
MIN
Enabled
Duty cycle
MAX
25
4.0
Measured at SMCLK,
divide by 1
TYP
40%
4.8
UNIT
μA
5.4
MHz
0.08
%/℃
1.4
%/V
50%
60%
Calculated using the box method: (MAX(–40°C to 85°C) – MIN(–40°C to 85°C)) / MIN(–40°C to 85°C) / (85°C – (–40°C))
Calculated using the box method: (MAX(1.8 V to 3.6 V) – MIN(1.8 V to 3.6 V)) / MIN(1.8 V to 3.6 V) / (3.6 V – 1.8 V)
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8.13.4 Wake-up Characteristics
8.13.4.1 Wake-up Times From Low-Power Modes and Reset
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
VCC
MIN
TYP
MAX
UNIT
6
10
μs
400 +
1.5/fDCO
ns
tWAKE-UP FRAM
(Additional) wake-up time to activate the FRAM in AM if
previously disabled by the FRAM controller or from an
LPM if immediate activation is selected for wakeup
tWAKE-UP LPM0
Wake-up time from LPM0 to active mode(1)
2.2 V, 3.0 V
tWAKE-UP LPM1
Wake-up time from LPM1 to active mode(1)
2.2 V, 3.0 V
6
μs
tWAKE-UP LPM2
Wake-up time from LPM2 to active mode(1)
2.2 V, 3.0 V
6
μs
tWAKE-UP LPM3
Wake-up time from LPM3 to active mode(1)
2.2 V, 3.0 V
6.6 +
9.6 +
2.0/fDCO 2.5/fDCO
tWAKE-UP LPM4
Wake-up time from LPM4 to active mode(1)
2.2 V, 3.0 V
6.6 +
9.6 +
2.0/fDCO 2.5/fDCO
tWAKE-UP LPM3.5
Wake-up time from LPM3.5 to active mode(2)
μs
μs
2.2 V, 3.0 V
350
450
SVSHE = 1
2.2 V, 3.0 V
350
450
μs
μs
SVSHE = 0
2.2 V, 3.0 V
0.4
0.8
ms
tWAKE-UP LPM4.5
Wake-up time from LPM4.5 to active mode(2)
tWAKE-UP-RST
Wake-up time from a RST pin triggered reset to active
mode(2)
2.2 V, 3.0 V
480
596
μs
tWAKE-UP-BOR
Wake-up time from power-up to active mode (2)
2.2 V, 3.0 V
0.5
1
ms
(1)
(2)
The wake-up time is measured from the edge of an external wake-up signal (for example, port interrupt or wake-up event) to the first
externally observable MCLK clock edge with MCLKREQEN = 1. This time includes the activation of the FRAM during wakeup. With
MCLKREQEN = 0, the externally observable MCLK clock is gated one additional cycle.
The wake-up time is measured from the edge of an external wake-up signal (for example, port interrupt or wake-up event) until the first
instruction of the user program is executed.
8.13.4.2 Typical Wake-up Charges
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)(1)
PARAMETER
QWAKE-UP FRAM
Charge used for activating the FRAM in AM or during wakeup from
LPM0 if previously disabled by the FRAM controller.
TEST CONDITIONS
MIN
TYP
MAX
UNIT
16.5
nAs
QWAKE-UP LPM0
Charge used to wake up from LPM0 to active mode (with FRAM active)
3.8
nAs
QWAKE-UP LPM1
Charge used to wake up from LPM1 to active mode (with FRAM active)
21
nAs
QWAKE-UP LPM2
Charge used to wake up from LPM2 to active mode (with FRAM active)
22
nAs
QWAKE-UP LPM3
Charge used to wake up from LPM3 to active mode (with FRAM active)
28
nAs
QWAKE-UP LPM4
Charge used to wake up from LPM4 to active mode (with FRAM active)
QWAKE-UP LPM3.5
Charge used to wake up from LPM3.5 to active mode(2)
QWAKE-UP LPM4.5
Charge used to wake up from LPM4.5 to active mode(2)
QWAKE-UP-RESET
Charge used for reset from RST or BOR event to active mode(2)
(1)
(2)
42
28
nAs
170
nAs
SVSHE = 1
173
SVSHE = 0
171
148
nAs
nAs
Charge used during the wake-up time from a given low-power mode to active mode. This does not include the energy required in
active mode (for example, for an interrupt service routine).
Charge required until start of user code. This does not include the energy required to reconfigure the device.
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8.13.4.3 Typical Characteristics, Average LPM Currents vs Wake-up Frequency
Figure 8-6 shows the average LPM currents vs wake-up frequency at 25°C.
10000.00
LPM0
LPM1
Average Wake-up Current (µA)
1000.00
LPM2,XT12
LPM3,XT12
LPM3.5,XT12
100.00
10.00
1.00
0.10
0.001
0.01
0.1
1
10
100
1000
10000
100000
Wake-up Frequency (Hz)
The average wake-up current does not include the energy required in active mode; for example, for an interrupt service routine or to
reconfigure the device.
Figure 8-6. Average LPM Currents vs Wake-up Frequency at 25°C
Figure 8-7 shows the average LPM currents vs wake-up frequency at 85°C.
10000.00
LPM0
LPM1
Average Wake-up Current (µA)
1000.00
LPM2,XT12
LPM3,XT12
LPM3.5,XT12
100.00
10.00
1.00
0.10
0.001
0.01
0.1
1
10
100
1000
10000
100000
Wake-up Frequency (Hz)
The average wake-up current does not include the energy required in active mode; for example, for an interrupt service routine or to
reconfigure the device.
Figure 8-7. Average LPM Currents vs Wake-up Frequency at 85°C
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8.13.5 Digital I/Os
8.13.5.1 Digital Inputs
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
VCC
MIN
TYP
MAX
2.2 V
1.2
1.65
3.0 V
1.65
2.25
UNIT
VIT+
Positive-going input threshold voltage
VIT–
Negative-going input threshold voltage
Vhys
Input voltage hysteresis (VIT+ – VIT–)
RPull
Pullup or pulldown resistor
For pullup: VIN = VSS
For pulldown: VIN = VCC
CI,dig
Input capacitance, digital only port pins
VIN = VSS or VCC
3
pF
CI,ana
Input capacitance, port pins with shared analog
functions(1)
VIN = VSS or VCC
5
pF
Ilkg(Px.y)
High-impedance input leakage current
See (2) (3)
2.2 V, 3.0 V
–20
t(int)
External interrupt timing (external trigger pulse
duration to set interrupt flag)(4)
Ports with interrupt
capability (see Section
7.3)
2.2 V, 3.0 V
20
ns
t(RST)
External reset pulse duration on RST (5)
2.2 V, 3.0 V
2
µs
(1)
(2)
(3)
(4)
(5)
44
2.2 V
0.55
1.00
3.0 V
0.75
1.35
2.2 V
0.44
0.98
3.0 V
0.60
1.30
20
35
50
+20
V
V
V
kΩ
nA
If the port pins PJ.4/LFXIN and PJ.5/LFXOUT are used as digital I/Os, they are connected by a 4-pF capacitor and a 35-MΩ resistor in
series. At frequencies of approximately 1 kHz and lower, the 4-pF capacitor can add to the pin capacitance of PJ.4/LFXIN and/or PJ.5/
LFXOUT.
The input leakage current is measured with VSS or VCC applied to the corresponding pins, unless otherwise noted.
The input leakage of the digital port pins is measured individually. The port pin is selected for input and the pullup or pulldown resistor
is disabled.
An external signal sets the interrupt flag every time the minimum interrupt pulse duration t(int) is met. It might be set by trigger signals
shorter than t(int).
Not applicable if RST/NMI pin configured as NMI
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SLASEV3A – MARCH 2020 – REVISED DECEMBER 2020
8.13.5.2 Digital Outputs
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
VCC
VCC –
0.60
VCC
I(OHmax) = –2 mA(1)
VCC –
0.25
VCC
VCC –
0.60
VCC
VSS
VSS +
0.25
I(OLmax) = 3 mA(2)
VSS
VSS +
0.60
I(OLmax) = 2 mA(1)
VSS
VSS +
0.25
VSS
VSS +
0.60
3.0 V
I(OHmax) = –6 mA(2)
I(OLmax) = 1 mA(1)
VOL
3.0 V
I(OLmax) = 6 mA(2)
fPx.y
Port output frequency (with load)(5)
CL = 20 pF, RL (3) (4)
fPort_CLK
Clock output frequency(5)
ACLK, MCLK, or SMCLK at
configured output port,
CL = 20 pF(4)
trise,dig
Port output rise time, digital only port pins
CL = 20 pF
tfall,dig
Port output fall time, digital only port pins
CL = 20 pF
trise,ana
Port output rise time, port pins with shared
analog functions
CL = 20 pF
tfall,ana
Port output fall time, port pins with shared
analog functions
CL = 20 pF
(1)
(2)
(3)
(4)
(5)
2.2 V
16
3.0 V
16
2.2 V
16
3.0 V
16
UNIT
V
2.2 V
Low-level output voltage
(see Figure 8-8 and Figure 8-9)
MAX
I(OHmax) = –3 mA(2)
2.2 V
VOH
TYP
VCC
I(OHmax) = –1 mA(1)
High-level output voltage
(see Figure 8-10 and Figure 8-11)
MIN
VCC –
0.25
V
MHz
MHz
2.2 V
4
15
3.0 V
3
15
2.2 V
4
15
3.0 V
3
15
2.2 V
6
15
3.0 V
4
15
2.2 V
6
15
3.0 V
4
15
ns
ns
ns
ns
The maximum total current, I(OHmax) and I(OLmax), for all outputs combined should not exceed ±48 mA to hold the maximum voltage
drop specified.
The maximum total current, I(OHmax) and I(OLmax), for all outputs combined should not exceed ±100 mA to hold the maximum voltage
drop specified.
A resistive divider with 2 × R1 and R1 = 1.6 kΩ between VCC and VSS is used as load. The output is connected to the center tap of the
divider. CL = 20 pF is connected from the output to VSS.
The output voltage reaches at least 10% and 90% VCC at the specified toggle frequency.
The port can output frequencies at least up to the specified limit, and the port might support higher frequencies.
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8.13.5.3 Typical Characteristics, Digital Outputs
30
25°C
85°C
Low-Level Output Current (mA)
Low-Level Output Current (mA)
15
10
5
25°C
85°C
20
10
P1.1
P1.1
0
0
0
0.5
1
1.5
2
0
0.5
1
Low-Level Output Voltage (V)
1.5
2
2.5
3
Low-Level Output Voltage (V)
C001
VCC = 2.2 V
VCC = 3.0 V
Figure 8-8. Typical Low-Level Output Current vs
Low-Level Output Voltage
Figure 8-9. Typical Low-Level Output Current vs
Low-Level Output Voltage
0
0
25°C
85°C
High-Level Output Current (mA)
High-Level Output Current (mA)
C001
-5
-10
25°C
85°C
-10
-20
P1.1
P1.1
-15
-30
0
0.5
1
1.5
2
0
0.5
High-Level Output Voltage (V)
1
1.5
2
2.5
C001
VCC = 2.2 V
C001
VCC = 3.0 V
Figure 8-10. Typical High-Level Output Current vs
High-Level Output Voltage
46
3
High-Level Output Voltage (V)
Figure 8-11. Typical High-Level Output Current vs
High-Level Output Voltage
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8.13.6 LEA
8.13.6.1 Low-Energy Accelerator (LEA) Performance
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
fLEA
Frequency for specified performance MCLK
W_LEA_FFT
LEA subsystem energy on fast
Fourier transform
Complex FFT 128 pt. Q.15 with random
data in LEA-RAM
W_LEA_FIR
LEA subsystem energy on finite
impulse response
W_LEA_ADD
LEA subsystem energy on additions
MIN
TYP
MAX
UNIT
16
MHz
VCORE = 3 V, MCLK
= 16 MHz
350
nJ
Real FIR on random Q.31 data with 128
taps on 24 points
VCORE = 3 V, MCLK
= 16 MHz
2.6
µJ
On 32 Q.31 elements with random value
out of LEA-RAM with linear address
increment
VCORE = 3 V, MCLK
= 16 MHz
6.6
nJ
8.13.7 Timer_A and Timer_B
8.13.7.1 Timer_A
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
fTA
Timer_A input clock frequency
Internal: SMCLK or ACLK,
External: TACLK,
Duty cycle = 50% ±10%
tTA,cap
Timer_A capture timing
All capture inputs, minimum pulse duration
required for capture
VCC
2.2 V, 3.0 V
2.2 V, 3.0 V
MIN
TYP
MAX
UNIT
16
MHz
20
ns
8.13.7.2 Timer_B
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
fTB
Timer_B input clock frequency
Internal: SMCLK or ACLK,
External: TBCLK,
Duty cycle = 50% ±10%
tTB,cap
Timer_B capture timing
All capture inputs, minimum pulse duration
required for capture
VCC
2.2 V, 3.0 V
2.2 V, 3.0 V
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MIN
20
TYP
MAX
UNIT
16
MHz
ns
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8.13.8 eUSCI
8.13.8.1 eUSCI (UART Mode) Clock Frequency
PARAMETER
feUSCI
eUSCI input clock frequency
fBITCLK
BITCLK clock frequency
(equals baud rate in MBaud)
CONDITIONS
MIN
Internal: SMCLK or ACLK,
External: UCLK,
Duty cycle = 50% ±10%
MAX
UNIT
16
MHz
4
MHz
8.13.8.2 eUSCI (UART Mode) Switching Characteristics
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
VCC
MIN
UCGLITx = 0
UCGLITx = 1
UART receive deglitch time(1)
tt
2.2 V, 3.0 V
UCGLITx = 2
UCGLITx = 3
(1)
TYP
MAX
5
UNIT
30
20
90
35
160
50
220
ns
Pulses on the UART receive input (UCxRX) shorter than the UART receive deglitch time are suppressed. Thus the selected deglitch
time can limit the maximum useable baud rate. To ensure that pulses are correctly recognized, their duration should exceed the
maximum specification of the deglitch time.
8.13.8.3 eUSCI (SPI Master Mode) Clock Frequency
TEST CONDITIONS
PARAMETER
feUSCI
MIN
Internal: SMCLK or ACLK,
Duty cycle = 50% ±10%
eUSCI input clock frequency
MAX
UNIT
16
MHz
MAX
UNIT
8.13.8.4 eUSCI (SPI Master Mode) Switching Characteristics
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)(1)
PARAMETER
TEST CONDITIONS
VCC
MIN
TYP
tSTE,LEAD
STE lead time, STE active to clock
UCSTEM = 1, UCMODEx = 01 or 10
1
tSTE,LAG
STE lag time, Last clock to STE
inactive
UCSTEM = 1, UCMODEx = 01 or 10
1
tSTE,ACC
STE access time, STE active to SIMO
data out
UCSTEM = 0, UCMODEx = 01 or 10
2.2 V, 3.0 V
60
ns
tSTE,DIS
STE disable time, STE inactive to
SOMI high impedance
UCSTEM = 0, UCMODEx = 01 or 10
2.2 V, 3.0 V
80
ns
tSU,MI
SOMI input data setup time
tHD,MI
SOMI input data hold time
tVALID,MO
SIMO output data valid time(2)
UCLK edge to SIMO valid,
CL = 20 pF
tHD,MO
SIMO output data hold time(3)
CL = 20 pF
(1)
(2)
(3)
48
2.2 V
40
3.0 V
40
2.2 V
0
3.0 V
0
UCxCLK
cycles
ns
ns
2.2 V
11
3.0 V
10
2.2 V
0
3.0 V
0
ns
ns
fUCxCLK = 1/2 tLO/HI with tLO/HI = max(tVALID,MO(eUSCI) + tSU,SI(Slave), tSU,MI(eUSCI) + tVALID,SO(Slave)).
For the slave parameters tSU,SI(Slave) and tVALID,SO(Slave), see the SPI parameters of the attached slave.
Specifies the time to drive the next valid data to the SIMO output after the output changing UCLK clock edge. See the timing diagrams
in Figure 8-12 and Figure 8-13.
Specifies how long data on the SIMO output is valid after the output changing UCLK clock edge. Negative values indicate that the data
on the SIMO output can become invalid before the output changing clock edge observed on UCLK. See the timing diagrams in Figure
8-12 and Figure 8-13.
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8.13.8.5 eUSCI (SPI Master Mode) Timing Diagrams
UCMODEx = 01
tSTE,LEAD
STE
tSTE,LAG
UCMODEx = 10
1/fUCxCLK
CKPL = 0
UCLK
CKPL = 1
tLOW/HIGH
tLOW/HIGH
tSU,MI
tHD,MI
SOMI
tHD,MO
tSTE,ACC
tSTE,DIS
tVALID,MO
SIMO
Figure 8-12. SPI Master Mode, CKPH = 0
UCMODEx = 01
tSTE,LEAD
STE
tSTE,LAG
UCMODEx = 10
1/fUCxCLK
CKPL = 0
UCLK
CKPL = 1
tLOW/HIGH
tLOW/HIGH
tSU,MI
tHD,MI
SOMI
tHD,MO
tSTE,ACC
tVALID,MO
tSTE,DIS
SIMO
Figure 8-13. SPI Master Mode, CKPH = 1
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8.13.8.6 eUSCI (SPI Slave Mode) Switching Characteristics
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)(1)
PARAMETER
TEST CONDITIONS
tSTE,LEAD
STE lead time, STE active to clock
tSTE,LAG
STE lag time, Last clock to STE inactive
tSTE,ACC
STE access time, STE active to SOMI data out
tSTE,DIS
STE disable time, STE inactive to SOMI high impedance
tSU,SI
SIMO input data setup time
tHD,SI
SIMO input data hold time
tVALID,SO
SOMI output data valid time(2)
UCLK edge to SOMI valid,
CL = 20 pF
tHD,SO
SOMI output data hold time(3)
CL = 20 pF
(1)
(2)
(3)
50
VCC
MIN
2.2 V
45
3.0 V
40
2.2 V
2
3.0 V
3
MAX
ns
ns
2.2 V
45
3.0 V
40
2.2 V
50
3.0 V
45
2.2 V
4
3.0 V
4
2.2 V
7
3.0 V
7
35
35
3.0 V
0
ns
ns
3.0 V
0
ns
ns
2.2 V
2.2 V
UNIT
ns
ns
fUCxCLK = 1/2 tLO/HI with tLO/HI ≥ max(tVALID,MO(Master) + tSU,SI(eUSCI), tSU,MI(Master) + tVALID,SO(eUSCI))
For the master parameters tSU,MI(Master) and tVALID,MO(Master), see the SPI parameters of the attached master.
Specifies the time to drive the next valid data to the SOMI output after the output changing UCLK clock edge. See the timing diagrams
in Figure 8-14 and Figure 8-15.
Specifies how long data on the SOMI output is valid after the output changing UCLK clock edge. See the timing diagrams in Figure
8-14 and Figure 8-15.
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8.13.8.7 eUSCI (SPI Slave Mode) Timing Diagrams
UCMODEx = 01
tSTE,LEAD
STE
tSTE,LAG
UCMODEx = 10
1/fUCxCLK
CKPL = 0
UCLK
CKPL = 1
tLOW/HIGH
tSU,SI
tLOW/HIGH
tHD,SI
SIMO
tHD,SO
tSTE,ACC
tSTE,DIS
tVALID,SO
SOMI
Figure 8-14. SPI Slave Mode, CKPH = 0
UCMODEx = 01
tSTE,LEAD
STE
tSTE,LAG
UCMODEx = 10
1/fUCxCLK
CKPL = 0
UCLK
CKPL = 1
tLOW/HIGH
tLOW/HIGH
tHD,SI
tSU,SI
SIMO
tHD,SO
tSTE,ACC
tVALID,SO
tSTE,DIS
SOMI
Figure 8-15. SPI Slave Mode, CKPH = 1
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8.13.8.8 eUSCI (I2C Mode) Switching Characteristics
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) (see Figure 8-16)
PARAMETER
TEST CONDITIONS
feUSCI
eUSCI input clock frequency
fSCL
SCL clock frequency
VCC
MIN
TYP
Internal: SMCLK or ACLK,
External: UCLK,
Duty cycle = 50% ±10%
2.2 V, 3.0 V
fSCL = 100 kHz
0
MAX
UNIT
16
MHz
400
kHz
4.0
tHD,STA
Hold time (repeated) START
tSU,STA
Setup time for a repeated START
tHD,DAT
Data hold time
2.2 V, 3.0 V
0
ns
tSU,DAT
Data setup time
2.2 V, 3.0 V
100
ns
tSU,STO
Setup time for STOP
tBUF
Bus free time between a STOP and START
condition
fSCL > 100 kHz
fSCL = 100 kHz
fSCL > 100 kHz
fSCL = 100 kHz
fSCL > 100 kHz
Pulse duration of spikes suppressed by input
filter
tSP
2.2 V, 3.0 V
4.7
2.2 V, 3.0 V
4.0
2.2 V, 3.0 V
µs
0.6
fSCL = 100 kHz
4.7
fSCL > 100 kHz
1.3
UCGLITx = 0
50
250
UCGLITx = 1
25
125
12.5
62.5
UCGLITx = 2
2.2 V, 3.0 V
UCCLTOx = 2
us
6.3
UCCLTOx = 1
Clock low time-out
µs
0.6
UCGLITx = 3
tTIMEOUT
µs
0.6
ns
31.5
27
2.2 V, 3.0 V
30
UCCLTOx = 3
ms
33
8.13.8.9 eUSCI (I2C Mode) Timing Diagram
tSU,STA
tHD,STA
tHD,STA
tBUF
SDA
tLOW
tHIGH
tSP
SCL
tSU,DAT
tSU,STO
tHD,DAT
Figure 8-16. I2C Mode Timing
52
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8.13.9 Segment LCD Controller
8.13.9.1 LCD_C Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
PARAMETER
CONDITIONS
MIN
NOM
MAX
UNIT
VCC,LCD_C,CP en,3.6
Supply voltage range, charge pump
enabled, VLCD ≤ 3.6 V
LCDCPEN = 1, 0000b < VLCDx ≤ 1111b
(charge pump enabled, VLCD ≤ 3.6 V)
2.2
3.6
V
VCC,LCD_C,CP en,3.3
Supply voltage range, charge pump
enabled, VLCD ≤ 3.3 V
LCDCPEN = 1, 0000b < VLCDx ≤ 1100b
(charge pump enabled, VLCD ≤ 3.3 V)
2.0
3.6
V
VCC,LCD_C,int. bias
Supply voltage range, internal
biasing, charge pump disabled
LCDCPEN = 0, VLCDEXT = 0
2.4
3.6
V
VCC,LCD_C,ext. bias
Supply voltage range, external
biasing, charge pump disabled
LCDCPEN = 0, VLCDEXT = 0
2.4
3.6
V
VCC,LCD_C,VLCDEXT
Supply voltage range, external LCD
voltage, internal or external biasing,
charge pump disabled
LCDCPEN = 0, VLCDEXT = 1
2.0
3.6
V
VLCDCAP
External LCD voltage at LCDCAP,
internal or external biasing, charge
pump disabled
LCDCPEN = 0, VLCDEXT = 1
2.4
3.6
V
CLCDCAP
Capacitor value on LCDCAP when
charge pump enabled
LCDCPEN = 1, VLCDx > 0000b (charge pump
enabled)
fACLK,in
ACLK input frequency range
fLCD
LCD frequency range
fFRAME = (1 / (2 × mux)) × fLCD with mux = 1
(static) to 8
fFRAME,4mux
LCD frame frequency range
fFRAME,4mux(MAX) = (1 / (2 × 4)) × fLCD(MAX) =
(1 / (2 × 4)) × 1024 Hz
CPanel
Panel capacitance
fLCD = 1024 Hz, all common lines equally
loaded
VR33
Analog input voltage at R33
LCDCPEN = 0, VLCDEXT = 1
4.7–20%
4.7
10+20%
µF
30
32.768
40
kHz
1024
Hz
128
Hz
10000
pF
0
2.4
VCC + 0.2
V
VR33
V
VR23,1/3bias
Analog input voltage at R23
LCDREXT = 1, LCDEXTBIAS = 1, LCD2B = 0
VR13
VR03 + 2/3
× (VR33 –
VR03)
VR13,1/3bias
Analog input voltage at R13 with 1/3
biasing
LCDREXT = 1, LCDEXTBIAS = 1, LCD2B = 0
VR03
VR03 + 1/3
× (VR33 –
VR03)
VR23
V
VR13,1/2bias
Analog input voltage at R13 with 1/2
biasing
LCDREXT = 1, LCDEXTBIAS = 1, LCD2B = 1
VR03
VR03 + 1/2
× (VR33 –
VR03)
VR33
V
VR03
Analog input voltage at R03
R0EXT = 1
VLCD – VR03
Voltage difference between VLCD and
LCDCPEN = 0, R0EXT = 1
R03
2.4
VLCDREF
External LCD reference voltage
applied at LCDREF
0.8
VLCDREFx = 01
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VSS
V
1.0
VCC + 0.2
V
1.2
V
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8.13.9.2 LCD_C Electrical Characteristics
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
VLCD,0
VLCDx = 0000, VLCDEXT = 0
VCC
MIN
2.4 V to 3.6 V
TYP
VLCD,1
LCDCPEN = 1, VLCDx = 0001b
2 V to 3.6 V
VLCD,2
LCDCPEN = 1, VLCDx = 0010b
2 V to 3.6 V
2.66
VLCD,3
LCDCPEN = 1, VLCDx = 0011b
2 V to 3.6 V
2.72
2.49
2.60
VLCD,4
LCDCPEN = 1, VLCDx = 0100b
2 V to 3.6 V
2.78
VLCD,5
LCDCPEN = 1, VLCDx = 0101b
2 V to 3.6 V
2.84
VLCD,6
LCDCPEN = 1, VLCDx = 0110b
2 V to 3.6 V
2.90
VLCD,7
LCDCPEN = 1, VLCDx = 0111b
2 V to 3.6 V
2.96
LCDCPEN = 1, VLCDx = 1000b
2 V to 3.6 V
3.02
VLCD,9
LCDCPEN = 1, VLCDx = 1001b
2 V to 3.6 V
3.08
3.14
LCD voltage
VLCD,8
VLCD,10
LCDCPEN = 1, VLCDx = 1010b
2 V to 3.6 V
VLCD,11
LCDCPEN = 1, VLCDx = 1011b
2 V to 3.6 V
3.20
VLCD,12
LCDCPEN = 1, VLCDx = 1100b
2 V to 3.6 V
3.26
VLCD,13
LCDCPEN = 1, VLCDx = 1101b
2.2 V to 3.6 V
3.32
VLCD,14
LCDCPEN = 1, VLCDx = 1110b
2.2 V to 3.6 V
3.38
LCDCPEN = 1, VLCDx = 1111b
2.2 V to 3.6 V
VLCD,15
VLCD,7,0.8
LCD voltage with external reference of
0.8 V
LCDCPEN = 1, VLCDx = 0111b,
VLCDREFx = 01b, VLCDREF = 0.8 V
VLCD,7,1.0
LCD voltage with external reference of
1.0 V
VLCD,7,1.2
MAX
UNIT
VCC
3.32
3.44
2.72
V
3.6
2 V to 3.6 V
2.96 ×
0.8 V
V
LCDCPEN = 1, VLCDx = 0111b,
VLCDREFx = 01b, VLCDREF = 1.0 V
2 V to 3.6 V
2.96 ×
1.0 V
V
LCD voltage with external reference of
1.2 V
LCDCPEN = 1, VLCDx = 0111b,
VLCDREFx = 01b, VLCDREF = 1.2 V
2.2 V to 3.6 V
2.96 ×
1.2 V
V
ΔVLCD
Voltage difference between
consecutive VLCDx settings
ΔVLCD = VLCD,x – VLCD,x–1
with x = 0010b to 1111b
ICC,Peak,CP
Peak supply currents due to charge
pump activities
LCDCPEN = 1, VLCDx = 1111b
external, with decoupling capacitor on
DVCC supply ≥1 µF
2.2 V
600
tLCD,CP,on
Time to charge CLCD when discharged
CLCD = 4.7 µF, LCDCPEN = 0→1, VLCDx =
1111b
2.2 V
100
ICP,Load
Maximum charge pump load current
LCDCPEN = 1, VLCDx = 1111b
2.2 V
RLCD,Seg
LCD driver output impedance, segment
LCDCPEN = 0, ILOAD = ±10 µA
lines
2.2 V
10
kΩ
RLCD,COM
LCD driver output impedance, common
LCDCPEN = 0, ILOAD = ±10 µA
lines
2.2 V
10
kΩ
54
40
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60
80
mV
µA
500
50
ms
µA
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SLASEV3A – MARCH 2020 – REVISED DECEMBER 2020
8.13.10 ADC12_B
8.13.10.1 12-Bit ADC, Power Supply and Input Range Conditions
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER
I(ADC12_B)
single-ended
mode
I(ADC12_B)
differential mode
I(ADC12_B)
single-ended
low-power mode
I(ADC12_B)
differential lowpower mode
CI
RI
(1)
(2)
(3)
TEST CONDITIONS
Analog input voltage range(1)
V(Ax)
VCC
All ADC12 analog input pins Ax
Operating supply current into AVCC
and DVCC terminals(2) (3)
Operating supply current into AVCC
and DVCC terminals(2) (3)
Operating supply current into AVCC
and DVCC terminals(2) (3)
MIN
NOM
0
MAX
UNIT
AVCC
V
fADC12CLK = MODCLK, ADC12ON = 1,
ADC12PWRMD = 0, ADC12DIF = 0,
REFON = 0, ADC12SHTx = 0,
ADC12DIV = 0
3.0 V
fADC12CLK = MODCLK, ADC12ON = 1,
ADC12PWRMD = 0, ADC12DIF = 0,
REFON = 0, ADC12SHTx = 0,
ADC12DIV = 0
2.2 V
140
190
3.0 V
175
245
2.2 V
170
230
fADC12CLK = MODCLK/4, ADC12ON = 1,
ADC12PWRMD = 1, ADC12DIF = 0,
REFON = 0, ADC12SHTx = 0,
ADC12DIV = 0
3.0 V
85
125
fADC12CLK = MODCLK/4, ADC12ON = 1,
ADC12PWRMD = 1, ADC12DIF = 0,
REFON = 0, ADC12SHTx = 0,
ADC12DIV = 0
2.2 V
83
120
3.0 V
110
165
2.2 V
109
160
fADC12CLK = MODCLK, ADC12ON = 1,
ADC12PWRMD = 0, ADC12DIF = 1,
REFON = 0, ADC12SHTx= 0,
ADC12DIV = 0
145
199
µA
µA
Operating supply current into AVCC
and DVCC terminals(2) (3)
fADC12CLK = MODCLK/4, ADC12ON = 1,
ADC12PWRMD = 1, ADC12DIF = 1,
REFON = 0, ADC12SHTx= 0,
ADC12DIV = 0
Input capacitance
Only one terminal Ax can be selected at one time 2.2 V
10
15
>2 V
0.5
4