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Design
OPA140, OPA2140, OPA4140
SBOS498D – JULY 2010 – REVISED JANUARY 2019
OPAx140 High-precision, low-noise, rail-to-rail output,
11-MHz JFET op amp
1 Features
3 Description
•
•
•
•
•
•
•
•
•
•
•
•
•
The OPA140, OPA2140, and OPA4140 operational
amplifier (op amp) family is a series of low-power
JFET input amplifiers that features good drift and low
input bias current. The rail-to-rail output swing and
input range that includes V– allow designers to take
advantage of the low-noise characteristics of JFET
amplifiers while also interfacing to modern, singlesupply, precision analog-to-digital converters (ADCs)
and digital-to-analog converters (DACs).
1
Very-Low Offset Drift: 1 μV/°C maximum
Very-Low Offset: 120 μV
Low Input Bias Current: 10 pA maximum
Very-Low 1/f Noise: 250 nVPP, 0.1 Hz to 10 Hz
Low Noise: 5.1 nV/√Hz
Slew Rate: 20 V/μs
Low Supply Current: 2 mA maximum
Input Voltage Range Includes V– supply
Single-Supply Operation: 4.5 V to 36 V
Dual-Supply Operation: ±2.25 V to ±18 V
No Phase Reversal
Industry-Standard SOIC Packages
VSSOP, TSSOP, and SOT-23 Packages
2 Applications
•
•
•
•
•
•
•
Battery-Powered Instruments
Industrial Controls
Medical Instrumentation
Photodiode Amplifiers
Active Filters
Data Acquisition Systems
Automatic Test Systems
The OPA140 achieves 11-MHz unity-gain bandwidth
and 20-V/μs slew rate while consuming only 1.8 mA
(typical) of quiescent current. It runs on a single 4.5-V
to 36-V supply or dual ±2.25-V to ±18-V supplies.
All versions are fully specified from –40°C to +125°C
for use in the most challenging environments. The
OPA140 (single) is available in the 5-pin SOT-23, 8pin VSSOP, and 8-pin SOIC packages; the OPA2140
(dual) is available in both 8-pin VSSOP and 8-pin
SOIC packages; and the OPA4140 (quad) is
available in the 14-pin SOIC and 14-pin TSSOP
packages.
Device Information(1)
PART NUMBER
OPA140
OPA2140
OPA4140
PACKAGE
BODY SIZE (NOM)
SOIC (8)
4.90 mm × 3.90 mm
SOT23 (5)
2.90 mm × 1.60 mm
VSSOP (8)
3.00 mm × 3.00 mm
SOIC (8)
4.90 mm × 3.90 mm
VSSOP (8)
3.00 mm × 3.00 mm
SOIC (14)
8.65 mm × 3.90 mm
TSSOP (14)
5.00 mm × 4.40 mm
(1) For all available packages, see the package option addendum
at the end of the data sheet.
0.1-Hz to 10-Hz Noise
VSUPPLY = ±18V
Competitor’s Device
200nV/div
OPAx140
Time (1s/div)
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
OPA140, OPA2140, OPA4140
SBOS498D – JULY 2010 – REVISED JANUARY 2019
www.ti.com
Table of Contents
1
2
3
4
5
6
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
5
6.1
6.2
6.3
6.4
6.5
6.6
6.7
Absolute Maximum Ratings ...................................... 5
ESD Ratings ............................................................ 5
Recommended Operating Conditions....................... 5
Thermal Information: OPA140 .................................. 6
Thermal Information: OPA2140 ................................ 6
Thermal Information: OPA4140 ................................ 6
Electrical Characteristics: VS = 4.5 V to 36 V; ±2.25 V
to ±18 V...................................................................... 7
6.8 Typical Characteristics .............................................. 8
7
Detailed Description ............................................ 15
7.1 Overview ................................................................. 15
7.2 Functional Block Diagram ....................................... 15
7.3 Feature Description................................................. 15
7.4 Device Functional Modes........................................ 22
8
Application and Implementation ........................ 23
8.1 Application Information............................................ 23
8.2 Typical Application ................................................. 23
9 Power Supply Recommendations...................... 24
10 Layout................................................................... 25
10.1 Layout Guidelines ................................................. 25
10.2 Layout Example .................................................... 25
11 Device and Documentation Support ................. 26
11.1
11.2
11.3
11.4
11.5
11.6
11.7
11.8
Device Support......................................................
Documentation Support ........................................
Related Links ........................................................
Receiving Notification of Documentation Updates
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
26
26
27
27
27
27
27
27
12 Mechanical, Packaging, and Orderable
Information ........................................................... 27
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision C (August 2016) to Revision D
•
Page
Changed Figure 12 x-axis title From: Frequency (Hz) To: Output Amplitude (VRMS) ........................................................... 10
Changes from Revision B (November 2015) to Revision C
•
Page
Changed units for En Input voltage noise From: µV To: nV in Electrical Characteristics: VS = 4.5 V to 36 V; ±2.25 V
to ±18 V ................................................................................................................................................................................. 7
Changes from Revision A (August 2010) to Revision B
Page
•
Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section ................................................................................................. 1
•
Changed title of Table 1 From: Characteristic Performance Measurements To: Table of Graphs ....................................... 8
•
Changed section 7.37 title From: Power Dissipation and Thermal Protection To: Thermal Protection .............................. 18
Changes from Original (July 2010) to Revision A
Page
•
Changed device and data sheet status to production data status ......................................................................................... 1
•
Added SOIC (8) (MSOP) packages........................................................................................................................................ 3
2
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SBOS498D – JULY 2010 – REVISED JANUARY 2019
5 Pin Configuration and Functions
DBV Package: OPA140
5-Pin SOT-23
Top View
OUT
1
V-
2
+IN
3
5
V+
4
-IN
D and DGK Packages: OPA140
8-Pin SOIC and VSSOP
Top View
NC
1
±IN
2
+IN
3
V±
4
8
NC
±
7
V+
+
6
OUT
5
NC
Pin Functions: OPA140
PIN
OPA140
NAME
+IN
I/O
D (SOIC),
DGK (VSSOP)
DBV (SOT)
3
3
DESCRIPTION
I
Noninverting input
Inverting input
–IN
2
4
I
NC
1, 5, 8
—
—
No internal connection (can be left floating)
OUT
6
1
O
Output
V+
7
5
—
Positive (highest) power supply
V–
4
2
—
Negative (lowest) power supply
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D and DGK Packages: OPA2140
8-Pin SOIC and VSSOP
Top View
2
+IN A
3
V–
4
A
+
B
–
–IN A
+
1
–
OUT A
8
V+
7
OUT B
6
–IN B
5
+IN B
D and PW Packages: OPA4140
14-Pin SOIC and TSSOP
Top View
OUT A
1
±IN A
2
A
14
OUT D
13
±IN D
D
+IN A
3
12
+IN D
V+
4
11
V±
+ IN B
5
10
+ IN C
B
C
±IN B
6
9
±IN C
OUT B
7
8
OUT C
Pin Functions: OPA2140 and OPA4140
PIN
NAME
+IN A
OPA2140
OPA4140
D (SOIC),
DGK (VSSOP)
D (SOIC),
PW (TSSOP)
3
3
I
Noninverting input, channel A
I/O
DESCRIPTION
+IN B
5
5
I
Noninverting input, channel B
+IN C
—
10
I
Noninverting input, channel C
+IN D
—
12
I
Noninverting input, channel D
–IN A
2
2
I
Inverting input, channel A
–IN B
6
6
I
Inverting input, channel B
–IN C
—
9
I
Inverting input, channel C
–IN D
—
13
I
Inverting input, channel D
OUT A
1
1
O
Output, channel A
OUT B
7
7
O
Output, channel B
OUT C
—
8
O
Output, channel C
OUT D
—
14
O
Output, channel D
V+
8
4
—
Positive (highest) power supply
V–
4
11
—
Negative (lowest) power supply
4
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SBOS498D – JULY 2010 – REVISED JANUARY 2019
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
MIN
MAX
Supply voltage, VS = (V+) – (V–)
Signal input pins
(V–) – 0.5
(V+) + 0.5
Current (2)
–10
10
Output short circuit (3)
–55
(2)
(3)
150
Junction
150
Storage, Tstg
(1)
V
mA
Continuous
Operating
Temperature
V
(2)
Voltage
UNIT
40
–65
°C
150
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
Input terminals are diode-clamped to the power-supply rails. Input signals that can swing more than 0.5 V beyond the supply rails should
be current-limited to 10 mA or less.
Short-circuit to VS/2 (ground in symmetrical dual-supply setups), one amplifier per package.
6.2 ESD Ratings
V(ESD)
(1)
(2)
Electrostatic discharge
VALUE
UNIT
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
±2000
V
Charged-device model (CDM), per JEDEC specification JESD22-C101 (2)
±500
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
Supply voltage
Specified temperature
NOM
MAX
UNIT
±2.25
±18
V
–40
125
°C
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6.4 Thermal Information: OPA140
OPA140
THERMAL METRIC (1)
D (SOIC)
DBV (SOT)
DGK (VSSOP)
8 PINS
5 PINS
8 PINS
UNIT
180
°C/W
RθJA
Junction-to-ambient thermal resistance
160
210
RθJC(top)
Junction-to-case (top) thermal resistance
75
200
55
°C/W
RθJB
Junction-to-board thermal resistance
60
110
130
°C/W
ψJT
Junction-to-top characterization parameter
9
40
N/A
°C/W
ψJB
Junction-to-board characterization parameter
50
105
120
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
N/A
N/A
N/A
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6.5 Thermal Information: OPA2140
OPA2140
THERMAL METRIC
(1)
D (SOIC)
DGK (VSSOP)
8 PINS
8 PINS
UNIT
180
°C/W
RθJA
Junction-to-ambient thermal resistance
160
RθJC(top)
Junction-to-case (top) thermal resistance
75
55
°C/W
RθJB
Junction-to-board thermal resistance
60
130
°C/W
ψJT
Junction-to-top characterization parameter
9
N/A
°C/W
ψJB
Junction-to-board characterization parameter
50
120
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
N/A
N/A
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6.6 Thermal Information: OPA4140
OPA4140
THERMAL METRIC
(1)
D (SOIC)
PW (TSSOP)
14 PINS
14 PINS
UNIT
RθJA
Junction-to-ambient thermal resistance
97
135
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
56
45
°C/W
RθJB
Junction-to-board thermal resistance
53
66
°C/W
ψJT
Junction-to-top characterization parameter
19
N/A
°C/W
ψJB
Junction-to-board characterization parameter
46
60
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
N/A
N/A
°C/W
(1)
6
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
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SBOS498D – JULY 2010 – REVISED JANUARY 2019
6.7 Electrical Characteristics: VS = 4.5 V to 36 V; ±2.25 V to ±18 V
at TA = 25°C, RL = 2 kΩ connected to midsupply, and VCM = VOUT = midsupply (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
30
120
UNIT
OFFSET VOLTAGE
VOS
Input offset voltage
VS = ±18 V, TA = –40°C to 125°C
dVOS/dT
Input offset voltage drift
VS = ±18 V, TA = –40°C to 125°C
PSRR
Power-supply rejection
ratio
VS = ±2.25 V to ±18 V, TA = –40°C to 125°C
µV
220
VS = ±2.25 V to ±18 V, TA = –40°C to 125°C
±4
µV/V
±0.35
1
µV/°C
±0.1
±0.5
µV/V
±0.5
±10
pA
±3
nA
±10
pA
±1
nA
INPUT BIAS CURRENT
IB
IOS
Input bias current
Input offset current
TA = –40°C to 125°C
±0.5
TA = –40°C to 125°C
NOISE
En
Input voltage noise
en
Input voltage noise
density
in
Input current noise
density
f = 0.1 Hz to 10 Hz
250
nVPP
f = 0.1 Hz to 10 Hz
42
nVRMS
f = 10 Hz
8
f = 100 Hz
5.8
f = 1 kHz
5.1
f = 1 kHz
0.8
nV/√Hz
fA/√Hz
INPUT VOLTAGE
VCM
CMRR
Common-mode voltage
Common-mode
rejection ratio
TA = –40°C to 125°C
VS = ±18 V, VCM = (V–) – 0.1 V
to (V+) – 3.5 V
(V–) – 0.1
(V+) – 3.5
126
TA = –40°C to 125°C
V
140
dB
120
INPUT IMPEDANCE
ZID
ZIC
Differential
Common-mode
VCM = (V–) – 0.1 V to (V+) – 3.5 V
1013 || 10
Ω || pF
13
Ω || pF
10
|| 7
OPEN-LOOP GAIN
VO = (V–) + 0.35 V to (V+) – 0.35 V,
RL = 10 kΩ
AOL
Open-loop voltage gain
VO = (V–) + 0.35 V to (V+) – 0.35 V,
RL = 2 kΩ
TA = –40°C to 125°C
120
126
114
126
dB
108
FREQUENCY RESPONSE
BW
Gain bandwidth product
11
MHz
SR
Slew rate
20
V/µs
ts
Settling time
tOR
Overload recovery time
THD+N
Total harmonic
distortion + noise
12-bit
880
ns
16-bit
1.6
µs
600
ns
1 kHz, G = 1, VO = 3.5 VRMS
0.00005%
OUTPUT
RLOAD = 10 kΩ, AOL ≥ 108 dB
VO
Voltage output
ISC
Short-circuit current
CLOAD
Capacitive load drive
ZO
Open-loop output
impedance
RLOAD = 2 kΩ, AOL ≥ 108 dB
Source
(V–) + 0.2
(V+) – 0.2
(V–) +
0.35
(V+) –
0.35
36
Sink
–30
V
mA
See Figure 19 and Figure 20
f = 1 MHz, IO = 0 A (See Figure 18)
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Electrical Characteristics: VS = 4.5 V to 36 V; ±2.25 V to ±18 V (continued)
at TA = 25°C, RL = 2 kΩ connected to midsupply, and VCM = VOUT = midsupply (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
POWER SUPPLY
VS
IQ
Power-supply voltage
4.5 (±2.25)
IO = 0 A
Quiescent current per
amplifier
9 (±18)
1.8
TA = –40°C to 125°C
2
2.7
V
mA
CHANNEL SEPARATION
At dc
Channel separation
0.02
At 100 kHz
10
μV/V
6.8 Typical Characteristics
Table 1. Table of Graphs
DESCRIPTION
FIGURE
Offset Voltage Production Distribution
Figure 1
Offset Voltage Drift Distribution
Figure 2
Offset Voltage vs Common-Mode Voltage (Maximum Supply)
Figure 3
IB vs Common-Mode Voltage
Figure 5
Input Offset Voltage vs Temperature
Figure 4
Output Voltage Swing vs Output Current
Figure 6
CMRR and PSRR vs Frequency (RTI)
Figure 7
Common-Mode Rejection Ratio vs Temperature
Figure 8
0.1-Hz to 10-Hz Noise
Figure 9
Input Voltage Noise Density vs Frequency
Figure 10
THD+N Ratio vs Frequency (80-kHz AP Bandwidth)
Figure 11
THD+N Ratio vs Output Amplitude
Figure 12
Quiescent Current vs Temperature
Figure 13
Quiescent Current vs Supply Voltage
Figure 14
Gain and Phase vs Frequency
Figure 15
Closed-Loop Gain vs Frequency
Figure 16
Open-Loop Gain vs Temperature
Figure 17
Open-Loop Output Impedance vs Frequency
Figure 18
Small-Signal Overshoot vs Capacitive Load (G = 1)
Figure 19
Small-Signal Overshoot vs Capacitive Load (G = –1)
Figure 20
No Phase Reversal
Figure 21
Positive Overload Recovery
Figure 23
Negative Overload Recovery
Figure 24
Large-Signal Positive and Negative Settling Time
Figure 25, Figure 26
Small-Signal Step Response (G = 1)
Figure 27
Small-Signal Step Response (G = –1)
Figure 28
Large-Signal Step Response (G = 1)
Figure 29
Large-Signal Step Response (G = –1)
Figure 30
Short-Circuit Current vs Temperature
Figure 31
Maximum Output Voltage vs Frequency
Figure 22
Channel Separation vs Frequency
Figure 32
8
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-120
-110
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
10
20
30
40
50
60
70
80
90
100
110
120
0
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
0.50
0.55
0.60
0.65
0.70
0.75
0.80
0.85
0.90
0.95
1.00
Population
Population
at TA = 25°C, VS = ±18 V, RL = 2 kΩ connected to midsupply, and VCM = VOUT = midsupply (unless otherwise noted)
Offset Voltage (mV)
Offset Voltage Drift (mV/°C)
Figure 1. Offset Voltage Production Distribution
160
18 Typical Units Shown
120
80
60
40
20
0
-20
-40
-60
-80
-100
-120
Input Offset Voltage (mV)
VOS (mV)
120
100
Figure 2. Offset Voltage Drift Distribution
80
40
0
-40
-80
-120
-160
-18
-12
0
-6
6
12
-40 -25 -10
18
5
20
35
50
65
80
95
110 125
Temperature (?C)
VCM (V)
Figure 3. Offset Voltage vs Common-Mode Voltage
Figure 4. Input Offset Voltage vs Temperature
(144 Amplifiers)
18.0
10
17.5
+14.5V
Output Voltage (V)
-0.1V
IB (pA)
17.0
Specified Common-Mode
Voltage Range
8
6
4
+IB
2
16.5
16.0
-40°C +25°C
+85°C
+125°C
-16.0
-16.5
-17.0
-17.5
0
-IB
-18.0
-18 -15 -12 -9
-6
-3
0
3
6
9
12
15
18
0
10
20
30
40
50
60
70
Output Current (mA)
VCM (V)
Figure 5. IB vs Common-Mode Voltage
Figure 6. Output Voltage Swing vs Output Current
(Maximum Supply)
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at TA = 25°C, VS = ±18 V, RL = 2 kΩ connected to midsupply, and VCM = VOUT = midsupply (unless otherwise noted)
Common-Mode Rejection Ratio (dB)
Power-Supply Rejection Ratio (dB)
180
0.12
CMRR
160
0.10
140
CMRR (mV/V)
120
100
-PSRR
80
+PSRR
60
0.08
0.06
0.04
40
0.02
20
0
0
1
10
100
1k
10k
100k
1M
10M
100M
-75
-50
0
-25
Frequency (Hz)
25
75
50
100
125
150
Temperature (°C)
Figure 7. CMRR and PSRR vs Frequency
(Referred to Input)
Figure 8. Common-Mode Rejection Ratio vs Temperature
100nV/div
Voltage Noise Density (nV/ÖHz)
100
10
1
0.1
Time (1s/div)
1
10
100
1k
10k
100k
Frequency (Hz)
Figure 10. Input Voltage Noise Density vs Frequency
Figure 9. 0.1-Hz to 10-Hz Noise
0.0001
-120
G = +1
0.00001
-140
10
100
1k
10k 20k
Frequency (Hz)
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G = -1
G = +1
-80
0.001
-100
0.0001
-120
NOTE: Increase at low signal levels is a result
of increased % contribution of noise.
0.00001
0.1
1
10
-140
100
Output Amplitude (VRMS)
Figure 11. THD+N Ratio vs Frequency
10
Total Harmonic Distortion + Noise (%)
Total Harmonic Distortion + Noise (%)
G = -1
BW = 80kHz
1kHz Signal
RL = 2kW
Total Harmonic Distortion + Noise (dB)
-100
VOUT = 3VRMS
BW = 80kHz
RL = 2kW
Total Harmonic Distortion + Noise (dB)
0.001
0.01
Figure 12. THD+N Ratio vs Output Amplitude
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at TA = 25°C, VS = ±18 V, RL = 2 kΩ connected to midsupply, and VCM = VOUT = midsupply (unless otherwise noted)
2.5
2.00
OPA140
1.75
2.0
1.50
1.25
IQ (mA)
IQ (mA)
1.5
1.0
1.00
0.75
0.50
0.5
0.25
0
Specified Supply-Voltage Range
0
-75
-50
0
-25
25
75
50
100
125
150
0
4
8
12
Temperature (°C)
Figure 13. Quiescent Current vs Temperature
140
20
24
28
32
36
Figure 14. Quiescent Current vs Supply Voltage
180
40
120
CL = 30pF
30
G = +10
Gain
135
90
60
40
Phase
Phase (degrees)
80
20
Gain (dB)
100
Gain (dB)
16
Supply Voltage (V)
45
20
10
G = +1
0
-10
-20
0
G = -1
-30
-20
10
100
1k
10k
100k
1M
10M
0
100M
-40
100k
1M
Frequency (Hz)
10M
100M
Frequency (Hz)
Figure 15. Gain and Phase vs Frequency
Figure 16. Closed-Loop Gain vs Frequency
1k
0
10kW Load
-0.2
100
-0.6
ZO (W)
AOL (mV/V)
-0.4
2kW Load
-0.8
10
-1.0
-1.2
1
-1.4
-75
-50
-25
0
25
75
50
100
125
150
10
100
Temperature (°C)
Figure 17. Open-Loop Gain vs Temperature
1k
10k
100k
1M
10M
100M
Frequency (Hz)
Figure 18. Open-Loop Output Impedance vs Frequency
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at TA = 25°C, VS = ±18 V, RL = 2 kΩ connected to midsupply, and VCM = VOUT = midsupply (unless otherwise noted)
40
50
ROUT = 0W
G = +1
+15V
35
45
ROUT
OPA140
25
ROUT = 0W
40
RL
-15V
ROUT = 24W
CL
Overshoot (%)
Overshoot (%)
30
ROUT = 24W
20
15
35
30
25
20
ROUT = 51W
15
10
RI = 2kW
RF = 2kW
G = -1
+15V
10
ROUT = 51W
5
ROUT
OPA140
CL
5
0
-15V
0
0
200
400
600
800
1000
1200
1400
1600
0
500
1000
1500
2000
Capacitive Load (pF)
Capacitive Load (pF)
Figure 19. Small-Signal Overshoot vs Capacitive Load
(100-mV Output Step)
Figure 20. Small-Signal Overshoot vs Capacitive Load
(100-mV Output Step)
35
Output Voltage (VPP)
5V/div
Output
+18V
OPA140
Output
-18V
37VPP
Sine Wave
(±18.5V)
Maximum Output
Voltage Range
Without Slew-Rate
Induced Distortion
VS = ±15 V
30
25
20
15
VS = ±5 V
10
VS = ±2.25 V
5
0
10k
Time (0.4ms/div)
100k
1M
10M
Frequency (Hz)
Figure 22. Maximum Output Voltage vs Frequency
Figure 21. No Phase Reversal
VOUT
5V/div
5V/div
VIN
20kW
20kW
2kW
VIN
2kW
OPA140
VOUT
OPA140
VIN
G = -10
VOUT
Figure 23. Positive Overload Recovery
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Time (0.4ms/div)
Time (0.4ms/div)
12
VOUT
VIN
Figure 24. Negative Overload Recovery
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1000
1000
800
800
600
400
16-bit Settling
200
0
-200
(±1/2LSB = ±0.00075%)
-400
-600
Delta from Final Value (mV)
Delta from Final Value (mV)
at TA = 25°C, VS = ±18 V, RL = 2 kΩ connected to midsupply, and VCM = VOUT = midsupply (unless otherwise noted)
600
400
0
-200
-600
-800
-1000
-1000
0.5
1
1.5
2
2.5
3
3.5
(±1/2LSB = ±0.00075%)
-400
-800
0
16-bit Settling
200
4
0
0.5
1
1.5
2
2.5
Figure 25. Large-Signal Positive Settling Time
(10-V Step)
RL
4
CL = 100pF
10mV/div
10mV/div
G = +1
OPA140
-15V
3.5
Figure 26. Large-Signal Negative Settling Time
(10-V Step)
CL = 100pF
+15V
3
Time (ms)
Time (ms)
RI
= 2kW
RF
= 2kW
+15V
OPA140
CL
CL
-15V
G = -1
Time (100ns/div)
Time (100ns/div)
Figure 28. Small-Signal Step Response (100 mV)
2 V/div
2 V/div
Figure 27. Small-Signal Step Response (100 mV)
Time (400 ns/div)
Time (400 ns/div)
Figure 29. Large-Signal Step Response
Figure 30. Large-Signal Step Response
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at TA = 25°C, VS = ±18 V, RL = 2 kΩ connected to midsupply, and VCM = VOUT = midsupply (unless otherwise noted)
60
-90
ISC, Source
ISC, Sink
Channel Separation (dB)
50
ISC (mA)
40
30
20
10
-100
VOUT = 3VRMS
G = +1
-110
RL = 2kW
-120
-130
-140
Short-circuiting causes thermal shutdown;
see Applications Information section.
RL = 5kW
0
-150
-75
-50
-25
0
25
75
50
100
125
150
10
100
Temperature (°C)
Figure 31. Short Circuit Current vs Temperature
14
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1k
10k
100k
Frequency (Hz)
Figure 32. Channel Separation vs Frequency
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7 Detailed Description
7.1 Overview
The OPAx140 family of operational amplifiers is a series of low-power JFET input amplifiers that feature superior
drift performance and low input bias current. The rail-to-rail output swing and input range that includes V– allow
designers to use the low-noise characteristics of JFET amplifiers while also interfacing to modern, single-supply,
precision analog-to-digital converters (ADCs) and digital-to-analog converters (DACs). The OPAx140 series
achieves 11-MHz unity-gain bandwidth and 20-V/μs slew rate, and consumes only 1.8 mA (typical) of quiescent
current. These devices operate on a single 4.5-V to 36-V supply or dual ±2.25-V to ±18-V supplies.
The Functional Block Diagram section shows the simplified diagram of the OPAx140.
7.2 Functional Block Diagram
V+
Pre-Output Driver
IN–
OUT
IN+
V–
7.3 Feature Description
7.3.1 Operating Voltage
The OPA140, OPA2140, and OPA4140 series of op amps can be used with single or dual supplies from an
operating range of VS = 4.5 V (±2.25 V) and up to VS = 36 V (±18 V). These devices do not require symmetrical
supplies; they only require a minimum supply voltage of 4.5 V (±2.25 V). For VS less than ±3.5 V, the commonmode input range does not include midsupply. Supply voltages higher than 40 V can permanently damage the
device; see the Absolute Maximum Ratings table. Key parameters are specified over the operating temperature
range, TA = –40°C to 125°C. Key parameters that vary over the supply voltage or temperature range are shown
in the Typical Characteristics section of this data sheet.
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Feature Description (continued)
7.3.2 Capacitive Load and Stability
The dynamic characteristics of the OPAx140 have been optimized for commonly encountered gains, loads, and
operating conditions. The combination of low closed-loop gain and high capacitive loads decreases the phase
margin of the amplifier and can lead to gain peaking or oscillations. As a result, heavier capacitive loads must be
isolated from the output. The simplest way to achieve this isolation is to add a small resistor (ROUT equal to 50 Ω,
for example) in series with the output.
Figure 19 and Figure 20 illustrate graphs of Small-Signal Overshoot vs Capacitive Load for several values of
ROUT. Also, see the Feedback Plots Define Op Amp AC Performance Application Bulletin, available for download
from www.ti.com, for details of analysis techniques and application circuits.
7.3.3 Output Current Limit
The output current of the OPAx140 series is limited by internal circuitry to 36 mA/–30 mA (sourcing/sinking), to
protect the device if the output is accidentally shorted. This short circuit current depends on temperature, as
shown in Figure 31.
7.3.4 Noise Performance
Figure 33 shows the total circuit noise for varying source impedances with the operational amplifier in a unitygain configuration (with no feedback resistor network and therefore no additional noise contributions). The
OPA140 and OPA211 are shown with total circuit noise calculated. The op amp itself contributes both a voltage
noise component and a current noise component. The voltage noise is commonly modeled as a time-varying
component of the offset voltage. The current noise is modeled as the time-varying component of the input bias
current and reacts with the source resistance to create a voltage component of noise. Therefore, the lowest noise
op amp for a given application depends on the source impedance. For low source impedance, current noise is
negligible, and voltage noise generally dominates. The OPA140, OPA2140, and OPA4140 family has both low
voltage noise and extremely low current noise because of the FET input of the op amp. As a result, the current
noise contribution of the OPAx140 series is negligible for any practical source impedance, which makes it the
better choice for applications with high source impedance.
The equation in Figure 33 shows the calculation of the total circuit noise, with these parameters:
• en = voltage noise
• In = current noise
• RS = source impedance
• k = Boltzmann's constant = 1.38 × 10–23 J/K
• T = temperature in degrees Kelvin (K)
For more details on calculating noise, see Basic Noise Calculations.
Votlage Noise Spectral Density, EO
10k
EO
1k
OPA211
RS
100
OPA140
Resistor Noise
10
2
2
2
EO = en + (in RS) + 4kTRS
1
100
1k
10k
100k
1M
Source Resistance, RS (W)
Figure 33. Noise Performance of the OPA140 and OPA211 in Unity-Gain Buffer Configuration
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Feature Description (continued)
7.3.5 Basic Noise Calculations
Low-noise circuit design requires careful analysis of all noise sources. External noise sources can dominate in
many cases; consider the effect of source resistance on overall op amp noise performance. Total noise of the
circuit is the root-sum-square combination of all noise components.
The resistive portion of the source impedance produces thermal noise proportional to the square root of the
resistance. This function is plotted in Figure 33. The source impedance is usually fixed; consequently, select the
op amp and the feedback resistors to minimize the respective contributions to the total noise.
Figure 34 illustrates both noninverting (A) and inverting (B) op amp circuit configurations with gain. In circuit
configurations with gain, the feedback network resistors also contribute noise. In general, the current noise of the
op amp reacts with the feedback resistors to create additional noise components. However, the extremely low
current noise of the OPAx140 means that its current noise contribution can be neglected.
The feedback resistor values can generally be chosen to make these noise sources negligible. Low impedance
feedback resistors load the output of the amplifier. The equations for total noise are shown for both
configurations.
A) Noise in Noninverting Gain Configuration
Noise at the output:
R2
2
2
O
E
R1
R2
= 1+
R1
2
R2
2
n
e +
2
2
2
e1 + e2 + 1 +
R1
R2
R1
es2
EO
RS
Where eS =
4kTRS = thermal noise of RS
e1 =
4kTR1 = thermal noise of R1
e2 =
4kTR2 = thermal noise of R2
VS
B) Noise in Inverting Gain Configuration
Noise at the output:
R2
2
2
EO
R1
= 1+
R2
R1 + RS
2
2
en +
R2
R 1 + RS
2
2
1
2
e + e2 +
R2
R 1 + RS
e s2
EO
RS
VS
Where eS =
4kTRS = thermal noise of RS
e1 =
4kTR1 = thermal noise of R1
e2 =
4kTR2 = thermal noise of R2
For the OPAx140 series of operational amplifiers at 1 kHz, en = 5.1 nV/√Hz.
Figure 34. Noise Calculation in Gain Configurations
7.3.6 Phase-Reversal Protection
The OPA140, OPA2140, and OPA4140 family has internal phase-reversal protection. Many FET- and bipolarinput op amps exhibit a phase reversal when the input is driven beyond its linear common-mode range. This
condition is most often encountered in noninverting circuits when the input is driven beyond the specified
common-mode voltage range, causing the output to reverse into the opposite rail. The input circuitry of the
OPA140, OPA2140, and OPA4140 prevents phase reversal with excessive common-mode voltage; instead, the
output limits into the appropriate rail (see Figure 21).
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Feature Description (continued)
7.3.7 Thermal Protection
The OPAx140 series of op amps are capable of driving 2-kΩ loads with power-supply voltages of up to ±18 V
over the specified temperature range. In a single-supply configuration, where the load is connected to the
negative supply voltage, the minimum load resistance is 2.8 kΩ at a supply voltage of 36 V. For lower supply
voltages (either single-supply or symmetrical supplies), a lower load resistance may be used, as long as the
output current does not exceed 13 mA; otherwise, the device short circuit current protection circuit may activate.
Internal power dissipation increases when operating at high supply voltages. Copper leadframe construction
used in the OPA140, OPA2140, and OPA4140 series devices improves heat dissipation compared to
conventional materials. Printed-circuit-board (PCB) layout can also help reduce a possible increase in junction
temperature. Wide copper traces help dissipate the heat by acting as an additional heatsink. Temperature rise
can be further minimized by soldering the devices directly to the PCB rather than using a socket.
Although the output current is limited by internal protection circuitry, accidental shorting of one or more output
channels of a device can result in excessive heating. For instance, when an output is shorted to mid-supply, the
typical short-circuit current of 36 mA leads to an internal power dissipation of over 600 mW at a supply of ±18 V.
In the case of a dual OPA2140 in an 8-pin VSSOP package (thermal resistance θJA = 180°C/W), such power
dissipation would lead the die temperature to be 220°C above ambient temperature, when both channels are
shorted. This temperature increase significantly decreases the operating life of the device.
To prevent excessive heating, the OPAx140 series has an internal thermal shutdown circuit that shuts down the
device if the die temperature exceeds approximately 180°C. When this thermal shutdown circuit activates, a builtin hysteresis of 15°C makes sure that the die temperature must drop to approximately 165°C before the device
switches on again.
Additional consideration should be given to the combination of maximum operating voltage, maximum operating
temperature, load, and package type. Figure 35 and Figure 36 show several practical considerations when
evaluating the OPA2140 (dual version) and the OPA4140 (quad version).
20
20
18
18
16
14
12
10
8
6
TSSOP Quad
SOIC Quad
MSOP Dual
SOIC Dual
4
2
0
80
18
Maximum Supply Voltage (V)
Maximum Supply Voltage (V)
As an example, the OPA4140 has a maximum total quiescent current of 10.8 mA (2.7 mA/channel) over
temperature. The 14-pin TSSOP package has a typical thermal resistance of 135°C/W. This parameter means
that because the junction temperature should not exceed 150°C to provide reliable operation, either the supply
voltage must be reduced, or the ambient temperature should remain low enough so that the junction temperature
does not exceed 150°C. This condition is illustrated in Figure 35 for various package types. Moreover, resistive
loading of the output causes additional power dissipation and thus self-heating, which also must be considered
when establishing the maximum supply voltage or operating temperature. To this end, Figure 36 shows the
maximum supply voltage versus temperature for a worst-case dc load resistance of 2 kΩ.
90
100
110
16
14
12
10
8
6
TSSOP Quad
SOIC Quad
MSOP Dual
SOIC Dual
4
2
0
120
130
140
150
160
80
90
100
110
120
130
140
150
160
Ambient Temperature (°C)
Ambient Temperature (°C)
Figure 35. Maximum Supply Voltage vs Temperature
(OPA2140 and OPA4140), Quiescent Condition
Figure 36. Maximum Supply Voltage vs Temperature
(OPA2140 and OPA4140), Maximum DC Load
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Feature Description (continued)
7.3.8 Electrical Overstress
Designers often ask questions about the capability of an operational amplifier to withstand electrical overstress.
These questions tend to focus on the device inputs, but may involve the supply voltage pins or even the output
pin. Each of these different pin functions have electrical stress limits determined by the voltage breakdown
characteristics of the particular semiconductor fabrication process and specific circuits connected to the pin.
Additionally, internal electrostatic discharge (ESD) protection is built into these circuits to protect them from
accidental ESD events both before and during product assembly.
It is helpful to have a good understanding of this basic ESD circuitry and its relevance to an electrical overstress
event. Figure 37 shows an illustration of the ESD circuits contained in the OPAx140 series (indicated by the
dashed line area). The ESD protection circuitry involves several current-steering diodes connected from the input
and output pins and routed back to the internal power-supply lines, where they meet at an absorption device
internal to the operational amplifier. This protection circuitry is intended to remain inactive during normal circuit
operation.
(2)
TVS
RF
+V
+VS
OPA140
RI
ESD CurrentSteering Diodes
-In
(3)
RS
+In
Op Amp
Core
Edge-Triggered ESD
Absorption Circuit
ID
VIN
Out
RL
(1)
-V
-VS
(2)
TVS
(1)
VIN = +VS + 500 mV.
(2)
TVS: +VS(max) > VTVSBR (Min) > +VS
(3)
Suggested value approximately 1 kΩ.
Figure 37. Equivalent Internal ESD Circuitry and Its Relation to a Typical Circuit Application
An ESD event produces a short duration, high-voltage pulse that is transformed into a short duration, highcurrent pulse as it discharges through a semiconductor device. The ESD protection circuits are designed to
provide a current path around the operational amplifier core to prevent it from being damaged. The energy
absorbed by the protection circuitry is then dissipated as heat.
When an ESD voltage develops across two or more of the amplifier device pins, current flows through one or
more of the steering diodes. Depending on the path that the current takes, the absorption device may activate.
The absorption device has a trigger, or threshold voltage, that is above the normal operating voltage of the
OPAx140 but below the device breakdown voltage level. Once this threshold is exceeded, the absorption device
quickly activates and clamps the voltage across the supply rails to a safe level.
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Feature Description (continued)
When the operational amplifier connects into a circuit such as the one Figure 37 shows, the ESD protection
components are intended to remain inactive and not become involved in the application circuit operation.
However, circumstances may arise where an applied voltage exceeds the operating voltage range of a given pin.
Should this condition occur, there is a risk that some of the internal ESD protection circuits may be biased on,
and conduct current. Any such current flow occurs through steering diode paths and rarely involves the
absorption device.
Figure 37 depicts a specific example where the input voltage, VIN, exceeds the positive supply voltage (+VS) by
500 mV or more. Much of what happens in the circuit depends on the supply characteristics. If +VS can sink the
current, one of the upper input steering diodes conducts and directs current to +VS. Excessively high current
levels can flow with increasingly higher VIN. As a result, the data sheet specifications recommend that
applications limit the input current to 10 mA.
If the supply is not capable of sinking the current, VIN may begin sourcing current to the operational amplifier, and
then take over as the source of positive supply voltage. The danger in this case is that the voltage can rise to
levels that exceed the operational amplifier absolute maximum ratings.
Another common question involves what happens to the amplifier if an input signal is applied to the input while
the power supplies +VS or –VS are at 0 V.
Again, it depends on the supply characteristic while at 0 V, or at a level below the input signal amplitude. If the
supplies appear as high impedance, then the operational amplifier supply current may be supplied by the input
source through the current steering diodes. This state is not a normal bias condition; the amplifier most likely will
not operate normally. If the supplies are low impedance, then the current through the steering diodes can
become quite high. The current level depends on the ability of the input source to deliver current, and any
resistance in the input path.
If there is an uncertainty about the ability of the supply to absorb this current, external Zener diodes may be
added to the supply pins as shown in Figure 37. The Zener voltage must be selected such that the diode does
not turn on during normal operation.
However, its Zener voltage should be low enough so that the Zener diode conducts if the supply pin begins to
rise above the safe operating supply voltage level.
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Feature Description (continued)
7.3.9 EMI Rejection
The electromagnetic interference (EMI) rejection ratio, or EMIRR, describes the EMI immunity of operational
amplifiers. An adverse effect that is common to many op amps is a change in the offset voltage as a result of RF
signal rectification. An op amp that is more efficient at rejecting this change in offset as a result of EMI has a
higher EMIRR and is quantified by a decibel value. Measuring EMIRR can be performed in many ways, but this
section provides the EMIRR IN+, which specifically describes the EMIRR performance when the RF signal is
applied to the noninverting input pin of the op amp. In general, only the noninverting input is tested for EMIRR for
the following three reasons:
• Op amp input pins are known to be the most sensitive to EMI, and typically rectify RF signals better than the
supply or output pins.
• The noninverting and inverting op amp inputs have symmetrical physical layouts and exhibit nearly matching
EMIRR performance
• EMIRR is easier to measure on noninverting pins than on other pins because the noninverting input terminal
can be isolated on a PCB. This isolation allows the RF signal to be applied directly to the noninverting input
terminal with no complex interactions from other components or connecting PCB traces. Figure 38
120
EMIRR IN+ (db)
PRF = -10 dbm
VS = r12 V
100 VCM = 0 V
80
60
40
20
0
10
100
1k
Frequency (MHz)
10k
Figure 38. OPA2140 EMIRR
The EMIRR IN+ of the OPA2140 is plotted versus frequency as shown in .If available, any dual and quad op amp
device versions have nearly similar EMIRR IN+ performance. The OPA2140 unity-gain bandwidth is
11 MHz. EMIRR performance below this frequency denotes interfering signals that fall within the op amp
bandwidth.
For more information, see the EMI Rejection Ratio of Operational Amplifiers Application Report, available for
download from www.ti.com.
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Feature Description (continued)
Table 2 lists the EMIRR IN+ values for the OPA2140 at particular frequencies commonly encountered in realworld applications. Applications listed in Table 2 may be centered on or operated near the particular frequency
shown. This information may be of special interest to designers working with these types of applications, or
working in other fields likely to encounter RF interference from broad sources, such as the industrial, scientific,
and medical (ISM) radio band.
Table 2. OPA2140 EMIRR IN+ for Frequencies of Interest
FREQUENCY
APPLICATION OR ALLOCATION
EMIRR IN+
400 MHz
Mobile radio, mobile satellite, space operation, weather, radar, ultra-high frequency (UHF)
applications
53.1 dB
900 MHz
Global system for mobile communications (GSM) applications, radio communication, navigation,
GPS (to 1.6 GHz), GSM, aeronautical mobile, UHF applications
72.2 dB
1.8 GHz
GSM applications, mobile personal communications, broadband, satellite, L-band (1 GHz to 2 GHz)
80.7 dB
2.4 GHz
802.11b, 802.11g, 802.11n, Bluetooth®, mobile personal communications, industrial, scientific and
medical (ISM) radio band, amateur radio and satellite, S-band (2 GHz to 4 GHz)
86.8 dB
3.6 GHz
Radiolocation, aero communication and navigation, satellite, mobile, S-band
91.7 dB
802.11a, 802.11n, aero communication and navigation, mobile communication, space and satellite
operation, C-band (4 GHz to 8 GHz)
96.6 dB
5 GHz
7.3.10 EMIRR +IN Test Configuration
Figure 39 shows the circuit configuration for testing the EMIRR IN+. An RF source is connected to the op amp
noninverting input terminal using a transmission line. The op amp is configured in a unity gain buffer topology
with the output connected to a low-pass filter (LPF) and a digital multimeter (DMM). A large impedance mismatch
at the op amp input causes a voltage reflection; however, this effect is characterized and accounted for when
determining the EMIRR IN+. The resulting DC offset voltage is sampled and measured by the multimeter. The
LPF isolates the multimeter from residual RF signals that may interfere with multimeter accuracy.
Ambient temperature: 25Û&
+VS
±
50
Low-Pass Filter
+
RF source
DC Bias: 0 V
Modulation: None (CW)
Frequency Sweep: 201 pt. Log
-VS
Sample /
Averaging
Not shown: 0.1 µF and 10 µF
supply decoupling
Digital Multimeter
Figure 39. EMIRR +IN Test Configuration
7.4 Device Functional Modes
The OPAx140 has a single functional mode and is operational when the power-supply voltage is greater than
4.5 V (±2.25 V). The maximum power supply voltage for the OPAx140 is 36 V (±18 V).
22
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8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The OPA140, OPA2140, and OPA4140 are unity-gain stable, operational amplifiers with very low noise, input
bias current, and input offset voltage. Applications with noisy or high-impedance power supplies require
decoupling capacitors placed close to the device pins. In most cases, 0.1-μF capacitors are adequate. Designers
can easily use the rail-to-rail output swing and input range that includes V– to take advantage of the low-noise
characteristics of JFET amplifiers while also interfacing to modern, single-supply, precision data converters.
8.2 Typical Application
R4
2.94 k
C5
1 nF
R1
590
R3
499
Input
C2
39 nF
±
Output
+
OPA140
Copyright © 2016, Texas Instruments Incorporated
Figure 40. 25-kHz Low-pass Filter
8.2.1 Design Requirements
Lowpass filters are commonly employed in signal processing applications to reduce noise and prevent aliasing.
The OPAx140 are an excellent choice to construct high-speed, high-precision active filters. Figure 40 shows a
second-order, low-pass filter commonly encountered in signal processing applications.
Use the following parameters for this design example:
• Gain = 5 V/V (inverting gain)
• Low-pass cutoff frequency = 25 kHz
• Second-order Chebyshev filter response with 3-dB gain peaking in the passband
8.2.2 Detailed Design Procedure
The infinite-gain multiple-feedback circuit for a low-pass network function is shown in. Use Equation 1 to
calculate the voltage transfer function.
1 R1R3C2C5
Output
s
2
Input
s
s C2 1 R1 1 R3 1 R4 1 R3R4C2C5
(1)
This circuit produces a signal inversion. For this circuit, the gain at DC and the lowpass cutoff frequency are
calculated by Equation 2:
R4
Gain
R1
fC
1
2S
1 R3R 4 C2C5
(2)
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Typical Application (continued)
Software tools are readily available to simplify filter design. WEBENCH® Filter Designer is a simple, powerful,
and easy-to-use active filter design program. The WEBENCH® Filter Designer lets you create optimized filter
designs using a selection of TI operational amplifiers and passive components from TI's vendor partners.
Available as a web based tool from the WEBENCH Design Center, WEBENCH Filter Designer allows you to
design, optimize, and simulate complete multistage active filter solutions within minutes.
8.2.3 Application Curve
20
Gain (db)
0
-20
-40
-60
100
1k
10k
Frequency (Hz)
100k
1M
Figure 41. OPAx140 Second-Order, 25-kHz, Chebyshev, Low-Pass Filter
9 Power Supply Recommendations
The OPAx140 is specified for operation from 4.5 V to 36 V (±2.25 V to ±18 V); many specifications apply from
–40°C to 125°C. Parameters that can exhibit significant variance with regard to operating voltage or temperature
are presented in the Typical Characteristics.
CAUTION
Supply voltages larger than 40 V can permanently damage the device; see the
Absolute Maximum Ratings.
Place 0.1-μF bypass capacitors close to the power-supply pins to reduce errors coupling in from noisy or highimpedance power supplies. For more detailed information on bypass capacitor placement, see the Layout
section.
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SBOS498D – JULY 2010 – REVISED JANUARY 2019
10 Layout
10.1 Layout Guidelines
For best operational performance of the device, use good PCB layout practices, including:
• Noise can propagate into analog circuitry through the power pins of the circuit as a whole and op amp
itself. Bypass capacitors are used to reduce the coupled noise by providing low-impedance power
sources local to the analog circuitry.
– Connect low-ESR, 0.1-µF ceramic bypass capacitors between each supply pin and ground, placed as
close to the device as possible. A single bypass capacitor from V+ to ground is applicable for singlesupply applications.
• Separate grounding for analog and digital portions of circuitry is one of the simplest and most-effective
methods of noise suppression. One or more layers on multilayer PCBs are usually devoted to ground
planes. A ground plane helps distribute heat and reduces EMI noise pickup. Make sure to physically
separate digital and analog grounds paying attention to the flow of the ground current. For more detailed
information, see Circuit Board Layout Techniques (SLOA089).
• To reduce parasitic coupling, run the input traces as far away from the supply or output traces as
possible. If these traces cannot be kept separate, crossing the sensitive trace perpendicular is much
better as opposed to in parallel with the noisy trace.
• Place the external components as close to the device as possible. As illustrated in Figure 42, keeping RF
and RG close to the inverting input minimizes parasitic capacitance.
• Keep the length of input traces as short as possible. Always remember that the input traces are the most
sensitive part of the circuit.
• Consider a driven, low-impedance guard ring around the critical traces. A guard ring can significantly
reduce leakage currents from nearby traces that are at different potentials.
• For best performance, TI recommends cleaning the PCB following board assembly.
• Any precision integrated circuit may experience performance shifts due to moisture ingress into the
plastic package. Following any aqueous PCB cleaning process, TI recommends baking the PCB
assembly to remove moisture introduced into the device packaging during the cleaning process. A low
temperature, post cleaning bake at 85°C for 30 minutes is sufficient for most circumstances.
10.2 Layout Example
Run the input traces
as far away from
the supply lines
as possible
Place components close
to device and to each
other to reduce parasitic
errors
VS+
RF
NC
NC
GND
±IN
V+
VIN
+IN
OUTPUT
V±
NC
Use a low-ESR,
ceramic bypass
capacitor
RG
GND
VS±
GND
VOUT
Ground (GND) plane on another layer
Use low-ESR,
ceramic bypass
capacitor
Figure 42. Operational Amplifier Board Layout for Noninverting Configuration
Copyright © 2010–2019, Texas Instruments Incorporated
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11 Device and Documentation Support
11.1 Device Support
11.1.1 Development Support
11.1.1.1 TINA-TI™ (Free Software Download)
TINA™ is a simple, powerful, and easy-to-use circuit simulation program based on a SPICE engine. TINA-TI is a
free, fully-functional version of the TINA software, preloaded with a library of macro models in addition to a range
of both passive and active models. TINA-TI provides all the conventional dc, transient, and frequency domain
analysis of SPICE, as well as additional design capabilities.
Available as a free download from the Analog eLab Design Center, TINA-TI offers extensive post-processing
capability that allows users to format results in a variety of ways. Virtual instruments offer the ability to select
input waveforms and probe circuit nodes, voltages, and waveforms, creating a dynamic quick-start tool.
NOTE
These files require that either the TINA software (from DesignSoft™) or TINA-TI software
be installed. Download the free TINA-TI software from the TINA-TI folder.
11.1.1.2 WEBENCH Filter Designer Tool
WEBENCH® Filter Designer is a simple, powerful, and easy-to-use active filter design program. The WEBENCH
Filter Designer lets you create optimized filter designs using a selection of TI operational amplifiers and passive
components from TI's vendor partners.
11.1.1.3 TI Precision Designs
TI Precision Designs are available online at http://www.ti.com/ww/en/analog/precision-designs/. TI Precision
Designs are analog solutions created by TI’s precision analog applications experts and offer the theory of
operation, component selection, simulation, complete PCB schematic and layout, bill of materials, and measured
performance of many useful circuits.
11.2 Documentation Support
11.2.1 Related Documentation
For related documentation see the following:
• Texas Instruments, Circuit Board Layout Techniques
• Texas Instruments, Op Amps for Everyone Design Reference
• Texas Instruments, OPA140, OPA2140, OPA4140 EMI Immunity Performance Technical Brief
• Texas Instruments, Compensate Transimpedance Amplifiers Intuitively Application Report
• Texas Instruments, Operational amplifier gain stability, Part 3: AC gain-error analysis
• Texas Instruments, Operational amplifier gain stability, Part 2: DC gain-error analysis
• Texas Instruments, Using infinite-gain, MFB filter topology in fully differential active filters
• Texas Instruments, Op Amp Performance Analysis Application Bulletin
• Texas Instruments, Single-Supply Operation of Operational Amplifiers Application Bulletin
• Texas Instruments, Tuning in Amplifiers Application Bulletin
• Texas Instruments, Shelf-Life Evaluation of Lead-Free Component Finishes Application Report
• Texas Instruments, Feedback Plots Define Op Amp AC Performance Application Bulletin
• Texas Instruments, EMI Rejection Ratio of Operational Amplifiers Application Report
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11.3 Related Links
Table 3 lists quick access links. Categories include technical documents, support and community resources,
tools and software, and quick access to sample or buy.
Table 3. Related Links
PARTS
PRODUCT FOLDER
SAMPLE & BUY
TECHNICAL
DOCUMENTS
TOOLS &
SOFTWARE
SUPPORT &
COMMUNITY
OPA140
Click here
Click here
Click here
Click here
Click here
OPA2140
Click here
Click here
Click here
Click here
Click here
OPA4140
Click here
Click here
Click here
Click here
Click here
11.4 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
11.5 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
11.6 Trademarks
E2E is a trademark of Texas Instruments.
TINA-TI is a trademark of Texas Instruments, Inc and DesignSoft, Inc.
WEBENCH is a registered trademark of Texas Instruments.
Bluetooth is a registered trademark of Bluetooth SIG, Inc.
TINA, DesignSoft are trademarks of DesignSoft, Inc.
All other trademarks are the property of their respective owners.
11.7 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
11.8 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
Copyright © 2010–2019, Texas Instruments Incorporated
Product Folder Links: OPA140 OPA2140 OPA4140
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27
PACKAGE OPTION ADDENDUM
www.ti.com
9-Jan-2019
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
OPA140AID
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
OPA140
OPA140AIDBVR
ACTIVE
SOT-23
DBV
5
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
O140
OPA140AIDBVT
ACTIVE
SOT-23
DBV
5
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
O140
OPA140AIDGKR
ACTIVE
VSSOP
DGK
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU | Call TI
Level-2-260C-1 YEAR
-40 to 125
(140, O140)
OPA140AIDGKT
ACTIVE
VSSOP
DGK
8
250
Green (RoHS
& no Sb/Br)
CU NIPDAU | Call TI
Level-2-260C-1 YEAR
-40 to 125
140
OPA140AIDR
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
OPA140
OPA2140AID
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
O2140A
OPA2140AIDGKR
ACTIVE
VSSOP
DGK
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
2140
OPA2140AIDGKT
ACTIVE
VSSOP
DGK
8
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
2140
OPA2140AIDR
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
O2140A
OPA4140AID
ACTIVE
SOIC
D
14
50
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-3-260C-168 HR
-40 to 125
O4140A
OPA4140AIDR
ACTIVE
SOIC
D
14
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-3-260C-168 HR
-40 to 125
O4140A
OPA4140AIPW
ACTIVE
TSSOP
PW
14
90
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
O4140A
OPA4140AIPWR
ACTIVE
TSSOP
PW
14
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
O4140A
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
9-Jan-2019
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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