OPA2277-DIE
www.ti.com
SBOS611B – MARCH 2012 – REVISED DECEMBER 2012
HIGH-PRECISION OPERATIONAL AMPLIFIER
Check for Samples: OPA2277-DIE
FEATURES
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APPLICATIONS
Ultra Low Offset Voltage
Ultra Low Drift
High Open-Loop Gain
High Common-Mode Rejection
High Power Supply Rejection
Low Bias Current
Wide Supply Range: ±2V to ±18V
Low Quiescent Current
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Transducer Amplifier
Bridge Amplifier
Temperature Measurements
Strain Gage Amplifier
Precision Integrator
Battery Powered Instruments
Test Equipment
DESCRIPTION
The OPA2277 precision op amp replaces the industry standard OP-177. It offers improved noise, wider output
voltage swing, and are twice as fast with half the quiescent current. Features include ultra low offset voltage and
drift, low bias current, high common-mode rejection, and high power supply rejection.
The OPA2277 op amp operates from ±2V to ±18V supplies with excellent performance. Unlike most op amps
which are specified at only one supply voltage, the OPA2277 is specified for real-world applications; a single limit
applies over the ±5V to ±15V supply range. High performance is maintained as the amplifiers swing to their
specified limits.
The OPA2277 op amp is easy to use and free from phase inversion and overload problems found in some other
op amps. It is stable in unity gain and provides excellent dynamic behavior over a wide range of load conditions.
The dual version features completely independent circuitry for lowest crosstalk and freedom from interaction,
even when overdriven or overloaded.
ORDERING INFORMATION (1)
(1)
(2)
PRODUCT
PACKAGE
DESIGNATOR
PACKAGE
ORDERABLE PART NUMBER
PACKAGE QUANTITY
OPA2277
TD
Bare Die In Waffle
Pack (2)
OPA2277TDD1
130
OPA2277TDD2
10
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com.
Processing is per the Texas Instruments commercial production baseline and is in compliance with the Texas Instruments Quality
Control System in effect at the time of manufacture. Electrical screening consists of DC parametric and functional testing at room
temperature only. Unless otherwise specified by Texas Instruments AC performance and performance over temperature is not
warranted. Visual Inspection is performed in accordance with MIL-STD-883 Test Method 2010 Condition B at 75X minimum.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2012, Texas Instruments Incorporated
OPA2277-DIE
SBOS611B – MARCH 2012 – REVISED DECEMBER 2012
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
BARE DIE INFORMATION
DIE THICKNESS
BACKSIDE FINISH
BACKSIDE
POTENTIAL
BOND PAD
METALLIZATION COMPOSITION
BOND PAD
THICKNESS
15 mils.
Silicon with backgrind
V-
Aluminium Pad (TiW/AlCu (0.5%))
1100 nm
Table 1. Bond Pad Coordinates in Microns (1)
(1)
DISCRIPTION
PAD NUMBER
X MIN
Y MIN
X MAX
Y MAX
Out A
1
-1414.78
-787.4
-1313.18
-685.8
Neg Input A
2
-224.79
-876.3
-123.19
-774.7
Pos Input A
3
567.69
-876.3
669.29
-774.7
V-
4
1391.92
-50.8
1493.52
50.8
Pos Input B
5
567.69
774.7
669.29
876.3
Neg Input B
6
-224.79
774.7
-123.19
876.3
Out B
7
-1414.78
685.8
-1313.18
787.4
V+
8
-1493.52
-52.07
-1391.92
52.07
Substrate V-.
2
Copyright © 2012, Texas Instruments Incorporated
Product Folder Links: OPA2277-DIE
PACKAGE OPTION ADDENDUM
www.ti.com
2-Aug-2022
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
(3)
Device Marking
Samples
(4/5)
(6)
OPA2277TDD1
ACTIVE
0
130
RoHS & Green
Call TI
N / A for Pkg Type
Samples
OPA2277TDD2
ACTIVE
0
10
RoHS & Green
Call TI
N / A for Pkg Type
Samples
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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