OPA336-EP
SINGLE-SUPPLY MICRO-POWER CMOS OPERATIONAL AMPLIFIER
MicroAmplifier™ SERIES
www.ti.com
SCES658 – JUNE 2006
FEATURES
•
•
•
•
•
•
•
•
(1)
•
•
•
Controlled Baseline
– One Assembly/Test Site, One Fabrication
Site
Extended Temperature Performance of
–55°C to 125°C
Enhanced Diminishing Manufacturing
Sources (DMS) Support
Enhanced Product-Change Notification
Qualification Pedigree (1)
Single-Supply Operation
Rail-to-Rail Output (Within 3 mV)
Micro Power: IQ = 23 µA/Amplifier
Micro-Size Packages
Low Offset Voltage: 500 µV Typical
Specified From VS = 2.3 V to 5.5 V
APPLICATIONS
•
•
•
•
•
•
•
Battery-Powered Instruments
Portable Devices
High-Impedance Applications
Photodiode Preamplifiers
Precision Integrators
Medical Instruments
Test Equipment
Component qualification in accordance with JEDEC and
industry standards to ensure reliable operation over an
extended temperature range. This includes, but is not limited
to, Highly Accelerated Stress Test (HAST) or biased 85/85,
temperature cycle, autoclave or unbiased HAST,
electromigration, bond intermetallic life, and mold compound
life. Such qualification testing should not be viewed as
justifying use of this component beyond specified
performance and environmental limits.
DBV PACKAGE
(TOP VIEW)
Out 1
5
V+
4
–In
V– 2
+In 3
DESCRIPTION/ORDERING INFORMATION
The OPA336 micro-power CMOS operational amplifier (MicroAmplifier™ series) is designed for battery-powered
applications. The device operates on a single supply, with operation as low as 2.1 V. The output is rail to rail and
swings to within 3 mV of the supplies with a 100-kΩ load. The common-mode range extends to the negative
supply — ideal for single-supply applications.
In addition to small size and low quiescent current (23 µA/amplifier), the OPA336 features low offset voltage
(500 µV typical), low input bias current (1 pA), and high open-loop gain (115 dB).
The device is packaged in the tiny DBV (SOT23-5) surface-mount package. It operates from –55°C to 125°C. A
macromodel is available for download (at www.ti.com) for design analysis.
ORDERING INFORMATION
TA
–55°C to 125°C
PACKAGE
DBV – SOT23-5
ORDERABLE PART NUMBER
OPA336MDBVREP
TOP-SIDE MARKING
OAYM
ELECTROSTATIC DISCHARGE SENSITIVITY
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions.
Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to
damage because very small parametric changes could cause the device not to meet its published specifications.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
MicroAmplifier is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2006, Texas Instruments Incorporated
OPA336-EP
SINGLE-SUPPLY MICRO-POWER CMOS OPERATIONAL AMPLIFIER
MicroAmplifier™ SERIES
www.ti.com
SCES658 – JUNE 2006
Absolute Maximum Ratings (1)
MIN
MAX
(V–) – 0.3
(V+) + 0.3
Supply voltage
Signal input terminals
7.5
Voltage range (2)
Current (2)
10
Output short circuit (3)
V
V
mA
Continuous
TA
Operating free-air temperature range
–55
125
°C
Tstg
Storage temperature range
–55
125
°C
TJ
Junction temperature
150
°C
Lead temperature (soldering, 10 s)
300
°C
Charged-Device Model (CDM)
ESD rating
θJA
(1)
(2)
(3)
2
UNIT
1000
Human-Body Model (HBM)
500
Machine Model (MM)
100
Package thermal impedance
200
V
°C/W
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
Input terminals are diode clamped to the power-supply rails. Input signals that can swing more than 0.3 V beyond the supply rails should
be current limited to 10 mA or less.
Short circuit to ground, one amplifier per package
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OPA336-EP
SINGLE-SUPPLY MICRO-POWER CMOS OPERATIONAL AMPLIFIER
MicroAmplifier™ SERIES
www.ti.com
SCES658 – JUNE 2006
Electrical Characteristics
over recommended operating temperature range, VS = 2.3 V to 5.5 V, TA = 25°C, VS = 5 V, RL = 25 kΩ connected to VS/2
(unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Offset Voltage
VOS
Input offset voltage
±500
Input offset voltage overtemperature (1)
±950
Input offset voltage vs power supply
PSRR
Overtemperature (1)
25
VS = 2.3 V to 5.5 V
100
150
Channel separation, dc
µV
µV/V
0.1
Input Bias Current
±1
Input bias current
IB
IOS
±10
±200
Overtemperature (1)
±1
Input offset current
±60
pA
pA
Noise
Input voltage noise
f = 0.1 Hz to 10 Hz
3
µVp-p
en
Input voltage noise density
f = 1 kHz
40
nV/√Hz
in
Current noise density
f = 1 kHz
30
fA/√Hz
Input Voltage Range
VCM
Common-mode voltage range
CMRR
Common-mode rejection ratio
Overtemperature (1)
–0.2
–0.2 V < VCM < (V+) – 1 V
76
(V+) – 1
86
72
V
dB
Input Impedance
Differential input impedance
1013 2
Ω pF
Common mode input impedance
1013 4
Ω pF
Open-Loop Gain
Open-loop voltage gain
AOL
Overtemperature (1)
RL = 25 kΩ,
100 mV < VO < (V+) – 100 mV
90
RL = 5 kΩ,
500 mV < VO < (V+) – 500 mV
90
RL = 25 kΩ,
100 mV < VO < (V+) – 100 mV
82
RL = 5 kΩ,
500 mV < VO < (V+) – 500 mV
89
dB
Frequency Response
GBW
Gain-bandwidth product
VS = 5 V, G = 1
100
kHz
SR
Slew rate
VS = 5 V, G = 1
0.03
V/µs
Overload recovery time
VIN × G = VS
100
µs
(1)
Limits apply over the specified temperature range, TA = –55°C to 125°C.
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3
OPA336-EP
SINGLE-SUPPLY MICRO-POWER CMOS OPERATIONAL AMPLIFIER
MicroAmplifier™ SERIES
www.ti.com
SCES658 – JUNE 2006
Electrical Characteristics (continued)
over recommended operating temperature range, VS = 2.3 V to 5.5 V, TA = 25°C, VS = 5 V, RL = 25 kΩ connected to VS/2
(unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
mV
Output
Voltage output swing from rail (2)
Overtemperature (3)
ISC
Short-circuit current
CLOAD
Capacitive load drive (4)
RL = 100 kΩ, AOL ≥ 70 dB
3
RL = 25 kΩ, AOL ≥ 90 dB
20
100
RL = 5 kΩ, AOL ≥ 90 dB
70
500
RL = 25 kΩ, AOL ≥ 82 dB
100
RL = 5 kΩ, AOL ≥ 89 dB
500
±5
mV
mA
Power Supply
VS
Specified voltage range
2.3
Minimum operating voltage
IQ
(2)
(3)
(4)
4
Quiescent current (per amplifier)
Overtemperature (3)
5.5
2.1
IO = 0
Output voltage swings are measured between the output and positive and negative power-supply rails.
Limits apply over the specified temperature range, TA = –55°C to 125°C.
See Capacitive Load and Stability section
Submit Documentation Feedback
23
V
V
35
38
µA
OPA336-EP
SINGLE-SUPPLY MICRO-POWER CMOS OPERATIONAL AMPLIFIER
MicroAmplifier™ SERIES
www.ti.com
SCES658 – JUNE 2006
TYPICAL CHARACTERISTICS
TA = 25°C, VS = 5 V, RL = 25 kΩ connected to VS/2 (unless otherwise noted)
POWER SUPPLY and COMMON MODE
OPEN−LOOP GAIN/PHASE vs FREQUENCY
100
CMRR
G
0
60
–45
40
–90
Φ
20
–135
0
–180
PSRR, CMRR (dB)
80
Phase (º)
Voltage Gain (dB)
80
60
PSRR
40
20
–20
0
1
10
100
1k
10k
100k
1M
1
10
Frequency (Hz)
100
1k
QUIESCENT CURRENT vs SUPPLY VOLTAGE
100k
QUIESCENT CURRENT vs TEMPERATURE
30
30
Per Amplifier
Per Amplifier
VS = 5 V
Quiescent Current (µA)
25
Quiescent Current (µA)
10k
Frequency (Hz)
25
20
15
20
15
10
VS = 2.3 V
5
10
0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
–75
–50
–25
25
50
75
100
125
SHORT−CIRCUIT CURRENT vs TEMPERATURE
8
±5
7
Short−Circuit Current (mA)
Short−Circuit Current (mA)
SHORT−CIRCUIT CURRENT vs SUPPLY VOLTAGE
±6
±4
0
Temperature (°C)
Supply Voltage (V)
I SC
±3
±2
–ISC
±1
VS = 5 V
6
–ISC
5
4
ISC
I SC
3
VS = 2.3 V
2
–ISC
1
0
0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
–75
Supply Voltage (V)
–50
–25
0
25
50
75
100
125
Temperature (°C)
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5
OPA336-EP
SINGLE-SUPPLY MICRO-POWER CMOS OPERATIONAL AMPLIFIER
MicroAmplifier™ SERIES
www.ti.com
SCES658 – JUNE 2006
TYPICAL CHARACTERISTICS (continued)
TA = 25°C, VS = 5 V, RL = 25 kΩ connected to VS/2 (unless otherwise noted)
INPUT VOLTAGE AND CURRENT NOISE
SPECTRAL DENSITY vs FREQUENCY
CHANNEL SEPARATION vs FREQUENCY
1k
1k
150
10
10
Channel Separation (dB)
100
100
Current Noise (fA/ Hz)
Voltage Noise (nV/ Hz)
Voltage noise
140
130
Dual and quad devices, G = 1, all
channels. Quad measured channel A
to D or B to C—other combinations
yield improved rejection.
120
Current noise
1
110
1
10
100
1k
10k
100k
100
1k
Frequency (Hz)
100k
AOL, CMRR, PSRR vs TEMPERATURE
MAXIMUM OUTPUT VOLTAGE vs FREQUENCY
120
6
AOL
VS = 5.5 V
AOL, CMRR, PSRR (dB)
5
Output Voltage (Vp−p)
10k
Frequency (Hz)
4
3
VS = 2.3 V
2
1
110
100
PSRR
90
CMRR
80
70
0
100
1k
–75
100k
–50
–25
0
25
50
75
100
Temperature (ºC)
OFFSET VOLTAGE-DRIFT MAGNITUDE
PRODUCTION DISTRIBUTION
25
25
Typical production
packaged units
20
Percent of Amplifiers (%)
15
10
5
0.1% 0.3%
0.2% 0.1%
0
20
15
10
5
Offset Voltage (µV)
6
Submit Documentation Feedback
4
3.5
3.75
3
Offset Voltage Drift (µV/_C)
3.25
2.5
2.75
2
2.25
1.5
1.75
1
1.25
0.5
0.75
500
400
300
200
100
0
–100
–200
–300
–400
–500
0
0.25
Percent of Amplifiers (%)
Typical production
packaged units
125
OPA336-EP
SINGLE-SUPPLY MICRO-POWER CMOS OPERATIONAL AMPLIFIER
MicroAmplifier™ SERIES
www.ti.com
SCES658 – JUNE 2006
TYPICAL CHARACTERISTICS (continued)
TA = 25°C, VS = 5 V, RL = 25 kΩ connected to VS/2 (unless otherwise noted)
INPUT BIAS CURRENT
vs INPUT COMMON-MODE VOLTAGE
4
100
3
Input Bias Current (pA)
1k
10
1
VS = 5 V
2
1
0
0.1
–75
–50
–25
0
25
50
75
100
0123 45
125
Common-Mode Voltage (V)
Temperature (°C)
OUTPUT VOLTAGE SWING vs OUTPUT CURRENT
OUTPUT VOLTAGE SWING vs OUTPUT CURRENT
–2.5
5
VS = 2.5 V
VS = 5 V
–2.0
−55°C
Sourcing
Current
25°C
3
VS = +2.3 V
125°C
2
−55°C
125°C
Output Voltage (V)
4
–1.5
125°C
–1.0
−55°C
–0.5
1
25°C
25°C
0
0
Output Current (mA)
–0
–3
–4
–5
Output Current (mA)
SMALL-SIGNAL STEP RESPONSE
G = 1, C L = 200 pF, VS = +5 V
LARGE-SIGNAL STEP RESPONSE
G = 1, C L = 620 pF, V S = +5 V
–1
–2
–6
–7
–8
500 mV/div
01 234 567 8
20 mV/div
Output Voltage (V)
Input Bias Current (pA)
INPUT BIAS CURRENT vs TEMPERATURE
200 Ωs/div
50 Ωs/div
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OPA336-EP
SINGLE-SUPPLY MICRO-POWER CMOS OPERATIONAL AMPLIFIER
MicroAmplifier™ SERIES
www.ti.com
SCES658 – JUNE 2006
APPLICATION INFORMATION
The OPA336 operational amplifier is fabricated with a state-of-the-art 0.6-micron CMOS process. The device is
unity-gain stable and suitable for a wide range of general-purpose applications. Power-supply pins should be
bypassed with 0.01-µF ceramic capacitors. The OPA336 is protected against reverse battery voltages.
Operating Voltage
The OPA336 can operate from a 2.1-V to 5.5-V single supply voltage, with excellent performance. Most behavior
remains unchanged throughout the full operating voltage range. Parameters that vary significantly with operating
voltage are shown in the typical characteristics. The OPA336 is fully specified for operation from
2.3 V to 5.5 V; a single limit applies over the supply range. In addition, many parameters are ensured over the
specified temperature range, –55°C to 125°C.
Input Voltage
The input common-mode range of the OPA336 extends from (V–) – 0.2 V to (V+) – 1 V. For normal operation,
inputs should be limited to this range. The absolute maximum input voltage is 300 mV beyond the supplies.
Thus, inputs greater than the input common-mode range, but less than maximum input voltage, while not valid,
will not cause any damage to the operational amplifier. Furthermore, the inputs may go beyond the power
supplies without phase inversion (see Figure 1), unlike some other operational amplifiers.
Normally, input bias current is approximately 1 pA. However, input voltages exceeding the power supplies can
cause excessive current to flow in or out of the input pins. Momentary voltages greater than the power supply
can be tolerated, as long as the current on the input pins is limited to 10 mA. This is easily accomplished with an
input resistor (see Figure 2).
6V
VOUT
0V
Figure 1. No Phase Inversion
With Inputs Greater Than Power-Supply Voltage
+5 V
IOVERLOAD
10 mA max
VOUT
VIN
5 kΩ
Figure 2. Input Current Protection
for Voltages Exceeding Power-Supply Voltage
8
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www.ti.com
OPA336-EP
SINGLE-SUPPLY MICRO-POWER CMOS OPERATIONAL AMPLIFIER
MicroAmplifier™ SERIES
SCES658 – JUNE 2006
APPLICATION INFORMATION (CONTINUED)
Capacitive Load and Stability
The OPA336 can drive a wide range of capacitive loads. However, all operational amplifiers, under certain
conditions, may become unstable. Operational amplifier configuration, gain, and load value are just a few of the
factors to consider when determining stability.
When properly configured, the OPA336 drives approximately 10,000 pF. An operational amplifier in unity-gain
configuration is the most vulnerable to capacitive load. The capacitive load reacts with the operational amplifier
output resistance along with any additional load resistance to create a pole in the response, which degrades the
phase margin. In unity gain, the OPA336 performs well with a pure capacitive load, up to about 300 pF.
Increasing gain enhances the amplifier's ability to drive loads beyond this level.
One method of improving capacitive load drive in the unity-gain configuration is to insert a 50-Ω to 100-Ω
resistor inside the feedback loop (see Figure 3). This reduces ringing with large capacitive loads, while
maintaining direct current (DC) accuracy. For example, with RL = 25 kΩ, OPA336 performs well with capacitive
loads in excess of 1000 pF (see Figure 4). Without the OPA336 RS, capacitive load drive typically is 350 pF for
these conditions (see Figure 5).
RS
100 Ω
VOUT
VIN
CL
RL
Figure 3. Series Resistor in Unity-Gain Configuration
Improves Capacitive Load Drive
20 mV/div
RS = 100 Ω, Load = 2 kΩ || 1000 pF, Vs +5 V
50 µs/div
Figure 4. Small-Signal Step Response
Using Series Resistor to Improve Capacitive Load Drive
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OPA336-EP
SINGLE-SUPPLY MICRO-POWER CMOS OPERATIONAL AMPLIFIER
MicroAmplifier™ SERIES
www.ti.com
SCES658 – JUNE 2006
APPLICATION INFORMATION (CONTINUED)
10k
Capacitive Load (pF)
Operation Above Selected Gain
Curve Not Recommended
G = +1
RL to Ground
RL to Ground
1k
RL to VS/2
VS = +5 V, VO = VS/2
100
5
10
100
Resistive Load (kΩ)
Figure 5. Stability — Capacitive Load vs Resistive Load
Alternatively, the resistor may be connected in series with the output outside of the feedback loop. However, if
there is a resistive load parallel to the capacitive load, it and the series resistor create a voltage divider. This
introduces a DC error at the output; however, this error may be insignificant. For instance, with
RL = 100 kΩ and RS = 100 Ω, there is only about a 0.1% error at the output.
Figure 5 shows the recommended operating regions for the OPA336. Decreasing the load resistance generally
improves capacitive load drive. Figure 5 also shows how stability differs, depending on where the resistive load
is connected. With G = 1 and RL = 10 kΩ connected to VS/2, the OPA336 typically can drive 500 pF. Connecting
the same load to ground improves capacitive load drive to 1000 pF.
10
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PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
OPA336MDBVREP
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-55 to 125
OAYM
V62/06641-01XE
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-55 to 125
OAYM
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
