OP
A1
41
OP
A2
141
OPA141
OPA2141
OPA4141
OP
A4
14
1
www.ti.com
SBOS510B – MARCH 2010 – REVISED MAY 2010
Single-Supply, 10MHz, Rail-to-Rail Output,
Low-Noise, JFET Amplifier
Check for Samples: OPA141, OPA2141, OPA4141
FEATURES
DESCRIPTION
•
•
•
•
•
•
•
•
•
•
•
•
•
The OPA141, OPA2141, and OPA4141 amplifier
family is a series of low-power JFET input amplifiers
that feature good drift and low input bias current. The
rail-to-rail output swing and input range that includes
V– allow designers to take advantage of the
low-noise characteristics of JFET amplifiers while
also interfacing to modern, single-supply, precision
analog-to-digital
converters
(ADCs)
and
digital-to-analog converters (DACs).
1
2
Low Supply Current: 2.3mA max
Low Offset Drift: 10mV/°C max
Low Input Bias Current: 20pA max
Very Low 1/f Noise: 250nVPP
Low Noise: 6.5nV/√Hz
Wide Bandwidth: 10MHz
Slew Rate: 20V/ms
Input Voltage Range Includes V–
Rail-to-Rail Output
Single-Supply Operation: 4.5V to 36V
Dual-Supply Operation: ±2.25V to ±18V
No Phase Reversal
MSOP-8, TSSOP Packages
APPLICATIONS
•
•
•
•
•
•
•
•
Battery-Powered Instruments
Industrial Controls
Medical Instrumentation
Photodiode Amplifiers
Active Filters
Data Acquisition Systems
Portable Audio
Automatic Test Systems
0.1Hz to 10Hz NOISE
VSUPPLY = ±18V
Competitor’s Device
OPAx141
The OPA141 achieves 10MHz unity-gain bandwidth
and 20V/ms slew rate while consuming only 1.8mA
(typ) of quiescent current. It runs on a single 4.5 to
36V supply or dual ±2.25V to ±18V supplies.
All versions are fully specified from –40°C to +125°C
for use in the most challenging environments. The
OPA141 (single) and OPA2141 (dual) versions are
available in both MSOP-8 and SO-8 packages; the
OPA4141 (quad) is available in the SO-14 and
TSSOP-14 packages.
RELATED PRODUCTS
FEATURES
PRODUCT
Precision, Low-Power, 10MHz FET
Input Industrial Op Amp
OPA140(1)
2.2nV/√Hz, Low-Power, 36V
Operational Amplifier in SOT-23
Package
OPA209(1)
Low-Noise, High-Precision,
JFET-Input Operational Amplifier
OPA827
Low-Noise, Low IQ Precision
Operational Amplifier
OPA376
High-Speed, FET-Input Operational
Amplifier
OPA132
200nV/div
1. Preview product; estimated availability in Q3
2010.
Time (1s/div)
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2010, Texas Instruments Incorporated
OPA141
OPA2141
OPA4141
SBOS510B – MARCH 2010 – REVISED MAY 2010
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
ABSOLUTE MAXIMUM RATINGS (1)
Over operating free-air temperature range (unless otherwise noted).
VALUE
UNIT
±20
V
Supply Voltage
Voltage
Signal Input
Terminals
(2)
(V–) –0.5 to (V+) +0.5
V
±10
mA
Current (2)
Output Short-Circuit (3)
Continuous
Operating Temperature, TA
–55 to +150
°C
Storage Temperature, TA
–65 to +150
°C
Junction Temperature, TJ
+150
°C
Human Body Model (HBM)
2000
V
Charged Device Model (CDM)
500
V
ESD Ratings
(1)
(2)
(3)
Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not supported.
Input terminals are diode-clamped to the power-supply rails. Input signals that can swing more than 0.5V beyond the supply rails should
be current limited to 10 mA or less.
Short-circuit to VS/2 (ground in symmetrical dual-supply setups), one amplifier per package.
PACKAGE INFORMATION (1)
PRODUCT
OPA141
OPA2141
OPA4141
(1)
PACKAGE-LEAD
PACKAGE DESIGNATOR
PACKAGE MARKING
O141A
SO-8
D
MSOP-8
DGK
141
SO-8
D
O2141A
MSOP-8
DGK
2141
TSSOP-14
PW
O4141A
SO-14
D
O4141AG4
For the most current package and ordering information see the Package Option Addendum at the end of this document, or visit the
device product folder at www.ti.com.
2
Copyright © 2010, Texas Instruments Incorporated
Product Folder Link(s): OPA141 OPA2141 OPA4141
OPA141
OPA2141
OPA4141
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SBOS510B – MARCH 2010 – REVISED MAY 2010
THERMAL INFORMATION
THERMAL METRIC
OPA141,
OPA2141
OPA141,
OPA2141
D (SO)
DGK (MSOP) (1)
8
8
qJA
Junction-to-ambient thermal resistance (2)
160
180
qJC(top)
Junction-to-case(top) thermal resistance (3)
75
55
(4)
qJB
Junction-to-board thermal resistance
60
130
yJT
Junction-to-top characterization parameter (5)
9
n/a
yJB
Junction-to-board characterization parameter (6)
50
120
n/a
n/a
qJC(bottom)
(1)
(2)
(3)
(4)
(5)
(6)
(7)
Junction-to-case(bottom) thermal resistance
(7)
UNITS
°C/W
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, high-K board, as
specified in JESD51-7, in an environment described in JESD51-2a.
The junction-to-case (top) thermal resistance is obtained by simulating a cold plate test on the package top. No specific
JEDEC-standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.
The junction-to-board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control the PCB
temperature, as described in JESD51-8.
The junction-to-top characterization parameter, yJT, estimates the junction temperature of a device in a real system and is extracted
from the simulation data for obtaining qJA, using a procedure described in JESD51-2a (sections 6 and 7).
The junction-to-board characterization parameter, yJB, estimates the junction temperature of a device in a real system and is extracted
from the simulation data for obtaining qJA , using a procedure described in JESD51-2a (sections 6 and 7).
The junction-to-case (bottom) thermal resistance is obtained by simulating a cold plate test on the exposed (power) pad. No specific
JEDEC standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.
THERMAL INFORMATION
THERMAL METRIC
OPA4141
OPA4141
D (SO)
PW (TSSOP) (1)
14
14
qJA
Junction-to-ambient thermal resistance (2)
97
135
qJC(top)
Junction-to-case(top) thermal resistance (3)
56
45
qJB
Junction-to-board thermal resistance (4)
53
66
19
n/a
(5)
yJT
Junction-to-top characterization parameter
yJB
Junction-to-board characterization parameter (6)
46
60
qJC(bottom)
Junction-to-case(bottom) thermal resistance (7)
n/a
n/a
(1)
(2)
(3)
(4)
(5)
(6)
(7)
UNITS
°C/W
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, high-K board, as
specified in JESD51-7, in an environment described in JESD51-2a.
The junction-to-case (top) thermal resistance is obtained by simulating a cold plate test on the package top. No specific
JEDEC-standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.
The junction-to-board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control the PCB
temperature, as described in JESD51-8.
The junction-to-top characterization parameter, yJT, estimates the junction temperature of a device in a real system and is extracted
from the simulation data for obtaining qJA, using a procedure described in JESD51-2a (sections 6 and 7).
The junction-to-board characterization parameter, yJB, estimates the junction temperature of a device in a real system and is extracted
from the simulation data for obtaining qJA , using a procedure described in JESD51-2a (sections 6 and 7).
The junction-to-case (bottom) thermal resistance is obtained by simulating a cold plate test on the exposed (power) pad. No specific
JEDEC standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.
Copyright © 2010, Texas Instruments Incorporated
Product Folder Link(s): OPA141 OPA2141 OPA4141
3
OPA141
OPA2141
OPA4141
SBOS510B – MARCH 2010 – REVISED MAY 2010
www.ti.com
ELECTRICAL CHARACTERISTICS: VS = +4.5V to +36V; ±2.25V to ±18V
Boldface limits apply over the specified temperature range, TA = –40°C to +125°C.
At TA = +25°C, RL = 2kΩ connected to midsupply, VCM = VOUT = midsupply, unless otherwise noted.
OPA141, OPA2141, OPA4141
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
±1
±3.5
mV
±4.3
mV
OFFSET VOLTAGE
Offset Voltage, RTI
VOS
Over Temperature
Drift
vs Power Supply
VS = ±18V
VS = ±18V
dVOS/dT
PSRR
xxxOver Temperature
VS = ±18V
±2
±10
mV/°C
VS = ±2.25V to ±18V
±0.14
±2
mV/V
±4
mV/V
VS = ±2.25V to ±18V
INPUT BIAS CURRENT
Input Bias Current
IB
±2
Over Temperature
Input Offset Current
IOS
±2
Over Temperature
±20
pA
±5
nA
±20
pA
±1
nA
NOISE
Input Voltage Noise
f = 0.1Hz to 10Hz
250
nVPP
f = 0.1Hz to 10Hz
42
nVRMS
f = 10Hz
12
nV/√Hz
f = 100Hz
6.5
nV/√Hz
f = 1kHz
6.5
nV/√Hz
0.8
fA/√Hz
Input Voltage Noise Density
Input Current Noise Density
en
in
f = 1kHz
INPUT VOLTAGE RANGE
Common-Mode Voltage Range
Common-Mode Rejection Ratio
VCM
CMRR
Over Temperature
(V–) –0.1
VS = ±18V, VCM = (V–) –0.1V
to (V+) – 3.5V
120
VS = ±18V, VCM = (V–) –0.1V
to (V+) – 3.5V
120
(V+)–3.5
126
V
dB
dB
INPUT IMPEDANCE
Differential
Common-Mode
VCM = (V–) –0.1V to (V+) –3.5V
1013 || 8
Ω || pF
1013 || 6
Ω || pF
OPEN-LOOP GAIN
Open-Loop Voltage Gain
AOL VO = (V–)+0.35V to (V+)–0.35V, RL = 2kΩ
114
Over Temperature
VO = (V–)+0.35V to (V+)–0.35V, RL = 2kΩ
108
126
dB
dB
FREQUENCY RESPONSE
Gain Bandwidth Product
BW
Slew Rate
Settling Time, 12-bit (0.024)
THD+N
1kHz, G = 1, VO = 3.5VRMS
Overload Recovery Time
4
10
MHz
20
V/ms
880
ns
0.00005
%
600
ns
Copyright © 2010, Texas Instruments Incorporated
Product Folder Link(s): OPA141 OPA2141 OPA4141
OPA141
OPA2141
OPA4141
www.ti.com
SBOS510B – MARCH 2010 – REVISED MAY 2010
ELECTRICAL CHARACTERISTICS: VS = +4.5V to +36V; ±2.25V to ±18V (continued)
Boldface limits apply over the specified temperature range, TA = –40°C to +125°C.
At TA = +25°C, RL = 2kΩ connected to midsupply, VCM = VOUT = midsupply, unless otherwise noted.
OPA141, OPA2141, OPA4141
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
V
OUTPUT
Voltage Output
Short-Circuit Current
VO
ISC
RL = 10kΩ
(V–)+0.2
(V+)–0.2
RL = 2kΩ
(V–)+0.35
(V+)–0.35
Source
Sink
Capacitive Load Drive
Open-Loop Output Impedance
CLOAD
RO
V
+36
mA
–30
mA
See Figure 19 and Figure 20
f = 1MHz, IO = 0 (See Figure 18)
Ω
10
POWER SUPPLY
Specified Voltage Range
Quiescent Current
(per amplifier)
VS
IQ
±2.25
IO = 0mA
1.8
Over Temperature
±18
V
2.3
mA
3.1
mA
CHANNEL SEPARATION
Channel Separation
At dc
0.02
mV/V
At 100kHz
10
mV/V
TEMPERATURE RANGE
Specified Range
–40
+125
°C
Operating Range
–55
+150
°C
Copyright © 2010, Texas Instruments Incorporated
Product Folder Link(s): OPA141 OPA2141 OPA4141
5
OPA141
OPA2141
OPA4141
SBOS510B – MARCH 2010 – REVISED MAY 2010
www.ti.com
PIN ASSIGNMENTS
OPA141
SO-8, MSOP-8
(TOP VIEW)
NC
(1)
-In
OPA4141
SO-14, TSSOP-14
(TOP VIEW)
1
8
NC
2
7
V+
(1)
Out A
1
-In A
2
A
+In
V-
3
6
4
5
Out
NC
(1) NC denotes no internal connection.
OPA2141
SO-8, MSOP-8
(TOP VIEW)
-In A
1
2
+In A
3
V-
4
A
B
Out D
13
-In D
D
+In A
3
12
+In D
V+
4
11
V-
+ In B
5
10
+ In C
(1)
B
OUT A
14
8
V+
7
Out B
6
-In B
5
+In B
C
-In B
6
9
-In C
Out B
7
8
Out C
SIMPLIFIED BLOCK DIAGRAM
V+
Pre-Output Driver
IN-
OUT
IN+
V-
Figure 1.
6
Copyright © 2010, Texas Instruments Incorporated
Product Folder Link(s): OPA141 OPA2141 OPA4141
OPA141
OPA2141
OPA4141
www.ti.com
SBOS510B – MARCH 2010 – REVISED MAY 2010
TYPICAL CHARACTERISTICS SUMMARY
TABLE OF GRAPHS
Table 1. Characteristic Performance Measurements
DESCRIPTION
FIGURE
Offset Voltage Production Distribution
Figure 2
Offset Voltage Drift Distribution
Figure 3
Offset Voltage vs Common-Mode Voltage (Max Supply)
Figure 4
IB and IOS vs Common-Mode Voltage
Figure 5
Output Voltage Swing vs Output Current
Figure 6
CMRR and PSRR vs Frequency (RTI)
Figure 7
Common-Mode Rejection Ratio vs Temperature
Figure 8
0.1Hz to 10Hz Noise
Figure 9
Input Voltage Noise Density vs Frequency
Figure 10
THD+N Ratio vs Frequency (80kHz AP Bandwidth)
Figure 11
THD+N Ratio vs Output Amplitude
Figure 12
Quiescent Current vs Temperature
Figure 13
Quiescent Current vs Supply Voltage
Figure 14
Gain and Phase vs Frequency
Figure 15
Closed-Loop Gain vs Frequency
Figure 16
Open-Loop Gain vs Temperature
Figure 17
Open-Loop Output Impedance vs Frequency
Figure 18
Small-Signal Overshoot vs Capacitive Load (G = +1)
Figure 19
Small-Signal Overshoot vs Capacitive Load (G = –1)
Figure 20
No Phase Reversal
Figure 21
Positive Overload Recovery
Figure 22
Negative Overload Recovery
Figure 23
Small-Signal Step Response (G = +1)
Figure 24
Small-Signal Step Response (G = –1)
Figure 25
Large-Signal Step Response (G = +1)
Figure 26
Large-Signal Step Response (G = –1)
Figure 27
Short-Circuit Current vs Temperature
Figure 28
Maximum Output Voltage vs Frequency
Figure 29
Channel Separation vs Frequency
Figure 30
Copyright © 2010, Texas Instruments Incorporated
Product Folder Link(s): OPA141 OPA2141 OPA4141
7
OPA141
OPA2141
OPA4141
SBOS510B – MARCH 2010 – REVISED MAY 2010
www.ti.com
TYPICAL CHARACTERISTICS
At TA = +25°C, VS = ±18V, RL = 2kΩ connected to midsupply, VCM = VOUT = midsupply, unless otherwise noted.
OFFSET VOLTAGE DRIFT DISTRIBUTION
0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
3.0
3.3
3.6
3.9
4.2
4.5
4.8
5.1
5.4
5.7
6.0
-3300
-3000
-2700
-2400
-2100
-1800
-1500
-1200
-900
-600
-300
0
300
600
900
1200
1500
1800
2100
2400
2700
3000
3300
Population
Population
OFFSET VOLTAGE PRODUCTION DISTRIBUTION
Offset Voltage Drift (mV/°C)
Offset Voltage (mV)
Figure 2.
Figure 3.
OFFSET VOLTAGE vs COMMON-MODE VOLTAGE
IB AND IOS vs COMMON-MODE VOLTAGE
10
3500
10 Typical Units Shown
8
2500
VS = ±18V
6
IB and IOS (pA)
VOS (mV)
1500
500
0
-500
+IB
4
-IB
2
0
IOS
-2
-4
-1500
-6
-2500
-8
-18
-12
0
-6
6
12
Common-Mode Range
-10
-18
-3500
18
-12
Figure 4.
6
12
18
Figure 5.
OUTPUT VOLTAGE SWING vs OUTPUT CURRENT
(MAX SUPPLY)
CMRR AND PSRR vs FREQUENCY (Referred to Input)
160
Common-Mode Rejection Ratio (dB)
Power-Supply Rejection Ratio (dB)
18.0
17.5
17.0
Output Voltage (V)
0
-6
Common-Mode Voltage (V)
VCM (V)
16.5
16.0
-40°C +25°C
+85°C
+125°C
-16.0
-16.5
-17.0
-17.5
140
CMRR
120
100
-PSRR
80
+PSRR
60
40
20
0
-18.0
0
10
20
30
40
50
1
10
100
Output Current (mA)
Figure 6.
1k
10k
100k
1M
10M
100M
Frequency (Hz)
Figure 7.
8
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OPA2141
OPA4141
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SBOS510B – MARCH 2010 – REVISED MAY 2010
TYPICAL CHARACTERISTICS (continued)
At TA = +25°C, VS = ±18V, RL = 2kΩ connected to midsupply, VCM = VOUT = midsupply, unless otherwise noted.
COMMON-MODE REJECTION RATIO vs TEMPERATURE
0.1Hz to 10Hz NOISE
0.12
0.08
100nV/div
CMRR (mV/V)
0.10
0.06
0.04
0.02
0
-75
-50
-25
0
25
75
50
100
125
Time (1s/div)
150
Temperature (°C)
Figure 8.
Figure 9.
INPUT VOLTAGE NOISE DENSITY vs FREQUENCY
THD+N RATIO vs FREQUENCY
Total Harmonic Distortion + Noise (%)
Voltage Noise Density (nV/ÖHz)
100
10
-100
VOUT = 3VRMS
BW = 80kHz
G = -1
RL = 2kW
0.0001
-120
G = +1
RL = 2kW
0.00001
-140
10
1
0.1
1
10
100
1k
10k
Total Harmonic Distortion + Noise (dB)
0.001
100
100k
1k
10k 20k
Frequency (Hz)
Frequency (Hz)
Figure 10.
Figure 11.
THD+N RATIO vs OUTPUT AMPLITUDE
BW = 80kHz
1kHz Signal
0.001
-100
0.0001
-120
G = -1, RL = 2kW
G = +1, RL = 2kW
0.00001
0.1
2.5
2.0
IQ (mA)
Total Harmonic Distortion + Noise (%)
QUIESCENT CURRENT vs TEMPERATURE
-80
Total Harmonic Distortion + Noise (dB)
0.01
1.5
1.0
0.5
-140
1
10
Output Amplitude (VRMS)
20
0
-75
-50
-25
0
25
50
75
100
125
150
Temperature (°C)
Figure 12.
Figure 13.
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OPA141
OPA2141
OPA4141
SBOS510B – MARCH 2010 – REVISED MAY 2010
www.ti.com
TYPICAL CHARACTERISTICS (continued)
At TA = +25°C, VS = ±18V, RL = 2kΩ connected to midsupply, VCM = VOUT = midsupply, unless otherwise noted.
GAIN AND PHASE vs FREQUENCY
1.75
120
1.50
100
1.25
80
Gain (dB)
140
1.00
0.75
180
Gain
135
90
60
40
Phase
45
20
0.50
0.25
0
Specified Supply-Voltage Range
0
100M
-20
0
0
4
8
12
16
20
24
28
Phase (degrees)
IQ (mA)
QUIESCENT CURRENT vs SUPPLY VOLTAGE
2.00
32
10
36
100
1k
10k
100k
1M
10M
Frequency (Hz)
Supply Voltage (V)
Figure 14.
Figure 15.
CLOSED-LOOP GAIN vs FREQUENCY
OPEN-LOOP GAIN vs TEMPERATURE
30
0
10kW Load
-0.2
20
-0.4
AOL (mV/V)
Gain (dB)
G = +10
10
G = +1
0
-0.6
2kW Load
-0.8
-1.0
-10
-1.2
G = -1
-20
100k
-1.4
1M
10M
100M
-75
-50
-25
Frequency (Hz)
0
25
75
50
100
125
150
Temperature (°C)
Figure 16.
Figure 17.
OPEN-LOOP OUTPUT IMPEDANCE vs FREQUENCY
SMALL-SIGNAL OVERSHOOT
vs CAPACITIVE LOAD (100mV Output Step)
1k
40
G = +1
+15V
35
ROUT
ROUT = 0W
30
ZO (W)
Overshoot (%)
100
10
OPA141
-15V
RL
CL
25
20
ROUT = 24W
15
ROUT = 51W
10
5
1
0
10
100
1k
10k
100k
1M
10M
100M
0
100 200 300 400 500 600 700 800 900 1000
Frequency (Hz)
Capacitive Load (pF)
Figure 18.
Figure 19.
10
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SBOS510B – MARCH 2010 – REVISED MAY 2010
TYPICAL CHARACTERISTICS (continued)
At TA = +25°C, VS = ±18V, RL = 2kΩ connected to midsupply, VCM = VOUT = midsupply, unless otherwise noted.
SMALL-SIGNAL OVERSHOOT
vs CAPACITIVE LOAD (100mV Output Step)
NO PHASE REVERSAL
45
RI = 2kW
40
RF = 2kW
G = -1
+15V
ROUT = 0W
ROUT
35
ROUT = 24W
CL
30
-15V
5V/div
Overshoot (%)
Output
OPA141
25
20
15
+18V
OPA141
ROUT = 51W
Output
10
-18V
37VPP
Sine Wave
(±18.5V)
5
0
0
Time (0.4ms/div)
100 200 300 400 500 600 700 800 900 1000
Capacitive Load (pF)
Figure 20.
Figure 21.
POSITIVE OVERLOAD RECOVERY
NEGATIVE OVERLOAD RECOVERY
VOUT
5V/div
5V/div
VIN
20kW
20kW
2kW
VIN
2kW
VOUT
OPA141
OPA141
VIN
VOUT
G = +10
G = -10
Time (0.4ms/div)
Time (0.4ms/div)
Figure 22.
Figure 23.
SMALL-SIGNAL STEP RESPONSE
(100mV)
SMALL-SIGNAL STEP RESPONSE
(100mV)
CL = 100pF
G = +1
OPA141
-15V
RL
20mV/div
20mV/div
CL = 100pF
+15V
VOUT
VIN
RI
= 2kW
RF
= 2kW
+15V
OPA141
CL
CL
-15V
G = -1
Time (100ns/div)
Time (100ns/div)
Figure 24.
Figure 25.
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OPA4141
SBOS510B – MARCH 2010 – REVISED MAY 2010
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TYPICAL CHARACTERISTICS (continued)
At TA = +25°C, VS = ±18V, RL = 2kΩ connected to midsupply, VCM = VOUT = midsupply, unless otherwise noted.
LARGE-SIGNAL STEP RESPONSE
LARGE-SIGNAL STEP RESPONSE
G = +1
CL = 100pF
2V/div
2V/div
G = -1
CL = 100pF
Time (400ns/div)
Time (400ns/div)
Figure 26.
Figure 27.
SHORT-CIRCUIT CURRENT vs TEMPERATURE
MAXIMUM OUTPUT VOLTAGE vs FREQUENCY
60
35
ISC, Source
ISC, Sink
Output Voltage (VPP)
50
ISC (mA)
40
30
20
10
25
20
15
VS = ±5V
10
VS = ±2.25V
5
Short-circuiting causes thermal shutdown;
see Applications Information section.
0
Maximum output
voltage range
without slew-rate
induced distortion
VS = ±15V
30
0
-75
-50
-25
0
25
75
50
100
125
150
10k
100k
1M
Temperature (°C)
Frequency (Hz)
Figure 28.
Figure 29.
10M
CHANNEL SEPARATION vs FREQUENCY
Channel Separation (dB)
-80
-90
VS = ±15V
VOUT = 3VRMS
G = +1
-100
RL = 600W
-110
-120
RL = 2kW
-130
RL = 5kW
-140
10
100
1k
10k
100k
Frequency (Hz)
Figure 30.
12
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SBOS510B – MARCH 2010 – REVISED MAY 2010
APPLICATION INFORMATION
OPERATING VOLTAGE
The OPA141, OPA2141, and OPA4141 series of op
amps can be used with single or dual supplies from
an operating range of VS = +4.5V (±2.25V) and up to
VS = +36V (±18V). These devices do not require
symmetrical supplies; they only require a minimum
supply voltage of +4.5V (±2.25V). For VS less than
±3.5V, the common-mode input range does not
include midsupply. Supply voltages higher than +40V
can permanently damage the device; see the
Absolute Maximum Ratings table. Key parameters
are specified over the operating temperature range,
TA = –40°C to +125°C. Key parameters that vary over
the supply voltage or temperature range are shown in
the Typical Characteristics section of this data sheet.
CAPACITIVE LOAD AND STABILITY
The dynamic characteristics of the OPAx141 have
been optimized for commonly encountered gains,
loads, and operating conditions. The combination of
low closed-loop gain and high capacitive loads
decreases the phase margin of the amplifier and can
lead to gain peaking or oscillations. As a result,
heavier capacitive loads must be isolated from the
output. The simplest way to achieve this isolation is to
add a small resistor (ROUT equal to 50Ω, for example)
in series with the output.
Figure 19 and Figure 20 illustrate graphs of
Small-Signal Overshoot vs Capacitive Load for
several values of ROUT. Also, refer to Applications
Bulletin AB-028 (literature number SBOA015,
available for download from the TI web site) for
details of analysis techniques and application circuits.
with total circuit noise calculated. The op amp itself
contributes both a voltage noise component and a
current noise component. The voltage noise is
commonly modeled as a time-varying component of
the offset voltage. The current noise is modeled as
the time-varying component of the input bias current
and reacts with the source resistance to create a
voltage component of noise. Therefore, the lowest
noise op amp for a given application depends on the
source impedance. For low source impedance,
current noise is negligible, and voltage noise
generally dominates. The OPA141, OPA2141, and
OPA4141 family has both low voltage noise and
extremely low current noise because of the FET input
of the op amp. As a result, the current noise
contribution of the OPAx141 series is negligible for
any practical source impedance, which makes it the
better choice for applications with high source
impedance.
The equation in Figure 31 shows the calculation of
the total circuit noise, with these parameters:
• en = voltage noise
• In = current noise
• RS = source impedance
• k = Boltzmann's constant = 1.38 × 10–23 J/K
• T = temperature in degrees Kelvin (K)
For more details on calculating noise, see the section
on Basic Noise Calculations.
10k
Votlage Noise Spectral Density, EO
The OPA141, OPA2141, and OPA4141 are unity-gain
stable, operational amplifiers with very low noise,
input bias current, and input offset voltage.
Applications with noisy or high-impedance power
supplies require decoupling capacitors placed close
to the device pins. In most cases, 0.1mF capacitors
are adequate. Figure 1 shows a simplified schematic
of the OPA141.
EO
1k
OPA211
RS
100
OPA141
Resistor Noise
10
2
2
2
EO = en + (in RS) + 4kTRS
1
100
1k
10k
100k
1M
Source Resistance, RS (W)
NOISE PERFORMANCE
Figure 31 shows the total circuit noise for varying
source impedances with the operational amplifier in a
unity-gain configuration (with no feedback resistor
network and therefore no additional noise
contributions). The OPA141 and OPA211 are shown
Figure 31. Noise Performance of the OPA141 and
OPA211 in Unity-Gain Buffer Configuration
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BASIC NOISE CALCULATIONS
Low-noise circuit design requires careful analysis of
all noise sources. External noise sources can
dominate in many cases; consider the effect of
source resistance on overall op amp noise
performance. Total noise of the circuit is the
root-sum-square
combination
of
all
noise
components.
The resistive portion of the source impedance
produces thermal noise proportional to the square
root of the resistance. This function is plotted in
Figure 31. The source impedance is usually fixed;
consequently, select the op amp and the feedback
resistors to minimize the respective contributions to
the total noise.
A) Noise in Noninverting Gain Configuration
Figure 32 illustrates both noninverting (A) and
inverting (B) op amp circuit configurations with gain.
In circuit configurations with gain, the feedback
network resistors also contribute noise. In general,
the current noise of the op amp reacts with the
feedback resistors to create additional noise
components. However, the extremely low current
noise of the OPAx141 means that its current noise
contribution can be neglected.
The feedback resistor values can generally be
chosen to make these noise sources negligible. Note
that low impedance feedback resistors load the
output of the amplifier. The equations for total noise
are shown for both configurations.
space
Noise at the output:
R2
2
2
O
E
R1
R2
= 1+
R1
2
R2
2
n
e +
2
2
R1
2
e1 + e2 + 1 +
R2
R1
es2
EO
RS
Where eS =
4kTRS = thermal noise of RS
e1 =
4kTR1 = thermal noise of R1
e2 =
4kTR2 = thermal noise of R2
VS
B) Noise in Inverting Gain Configuration
Noise at the output:
R2
2
2
EO
R1
RS
VS
= 1+
R2
R1 + RS
2
R2
2
en +
R 1 + RS
2
2
1
2
e + e2 +
R2
R 1 + RS
e s2
EO
Where eS =
4kTRS = thermal noise of RS
e1 =
4kTR1 = thermal noise of R1
e2 =
4kTR2 = thermal noise of R2
For the OPAx141 series of operational amplifiers at 1kHz, en = 6.5nV/√Hz.
Figure 32. Noise Calculation in Gain Configurations
14
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PHASE-REVERSAL PROTECTION
The OPA141, OPA2141, and OPA4141 family has
internal phase-reversal protection. Many FET- and
bipolar-input op amps exhibit a phase reversal when
the input is driven beyond its linear common-mode
range. This condition is most often encountered in
noninverting circuits when the input is driven beyond
the specified common-mode voltage range, causing
the output to reverse into the opposite rail. The input
circuitry of the OPA141, OPA2141, and OPA4141
prevents
phase
reversal
with
excessive
common-mode voltage; instead, the output limits into
the appropriate rail (see Figure 21).
OUTPUT CURRENT LIMIT
The output current of the OPAx141 series is limited
by
internal
circuitry
to
+36mA/–30mA
(sourcing/sinking), to protect the device if the output
is accidentally shorted. This short-circuit current
depends on temperature, as shown in Figure 28.
POWER DISSIPATION AND THERMAL
PROTECTION
The OPAx141 series of op amps are capable of
driving 2kΩ loads with power-supply voltages of up to
±18V over the specified temperature range. In a
single-supply configuration, where the load is
connected to the negative supply voltage, the
minimum load resistance is 2.8kΩ at a supply voltage
of +36V. For lower supply voltages (either
single-supply or symmetrical supplies), a lower load
resistance may be used, as long as the output current
does not exceed 13mA; otherwise, the device
short-circuit current protection circuit may activate.
Internal power dissipation increases when operating
at high supply voltages. Copper leadframe
construction used in the OPA141, OPA2141, and
OPA4141 series devices improves heat dissipation
compared to conventional materials. Printed circuit
board (PCB) layout can also help reduce a possible
increase in junction temperature. Wide copper traces
help dissipate the heat by acting as an additional
heatsink. Temperature rise can be further minimized
by soldering the devices directly to the PCB rather
than using a socket.
Although the output current is limited by internal
protection circuitry, accidental shorting of one or more
output channels of a device can result in excessive
heating. For instance, when an output is shorted to
mid-supply, the typical short-circuit current of 36mA
leads to an internal power dissipation of over 600mW
at a supply of ±18V.
In the case of a dual OPA2141 in an MSOP-8
package (thermal resistance qJA = 180°C/W), such
power dissipation would lead the die temperature to
be 220°C above ambient temperature, when both
channels are shorted. This temperature increase
significantly decreases the operating life of the
device.
In order to prevent excessive heating, the OPAx141
series has an internal thermal shutdown circuit, which
shuts down the device if the die temperature exceeds
approximately +180°C. Once this thermal shutdown
circuit activates, a built-in hysteresis of 15°C ensures
that the die temperature must drop to approximately
+165°C before the device switches on again.
Additional consideration should be given to the
combination of maximum operating voltage,
maximum operating temperature, load, and package
type. Figure 33 and Figure 34 show several practical
considerations when evaluating the OPA2141 (dual
version) and the OPA4141 (quad version).
As an example, the OPA4141 has a maximum total
quiescent current of 12.4mA (3.1mA/channel) over
temperature. The TSSOP-14 package has a typical
thermal resistance of 135°C/W. This parameter
means that because the junction temperature should
not exceed 150°C in order to ensure reliable
operation, either the supply voltage must be reduced,
or the ambient temperature should remain low
enough so that the junction temperature does not
exceed 150°C. This condition is illustrated in
Figure 33 for various package types. Moreover,
resistive loading of the output causes additional
power dissipation and thus self-heating, which also
must be considered when establishing the maximum
supply voltage or operating temperature. To this end,
Figure 34 shows the maximum supply voltage versus
temperature for a worst-case dc load resistance of
2kΩ.
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MAXIMUM SUPPLY VOLTAGE vs TEMPERATURE
(Quiescent Condition)
20
TSSOP Quad
SOIC Quad
MSOP Dual
SOIC Dual
Maximum Supply Voltage (V)
18
16
14
12
10
8
6
4
2
0
80
90
100
110
120
130
140
150
160
Ambient Temperature (°C)
Figure 33. Maximum Supply Voltage vs
Temperature (OPA2141 and OPA4141), Quiescent
Condition
MAXIMUM SUPPLY VOLTAGE vs TEMPERATURE
(Maximum DC Load on All Channels)
20
TSSOP Quad
SOIC Quad
MSOP Dual
SOIC Dual
Maximum Supply Voltage (V)
18
16
14
12
10
VCC+
8
VS
V+
6
VS/2
V-
4
2kW
VS
2
VS/2
VCC-
0
80
90
100
110
120
130
140
150
160
Ambient Temperature (°C)
Figure 34. Maximum Supply Voltage vs
Temperature (OPA2141 and OPA4141), Maximum
DC Load
ELECTRICAL OVERSTRESS
Designers often ask questions about the capability of
an operational amplifier to withstand electrical
overstress. These questions tend to focus on the
device inputs, but may involve the supply voltage pins
or even the output pin. Each of these different pin
functions have electrical stress limits determined by
the voltage breakdown characteristics of the
particular semiconductor fabrication process and
specific circuits connected to the pin. Additionally,
internal electrostatic discharge (ESD) protection is
built into these circuits to protect them from
accidental ESD events both before and during
product assembly.
It is helpful to have a good understanding of this
basic ESD circuitry and its relevance to an electrical
overstress event. See Figure 35 for an illustration of
the ESD circuits contained in the OPAx141 series
(indicated by the dashed line area). The ESD
protection circuitry involves several current-steering
diodes connected from the input and output pins and
routed back to the internal power-supply lines, where
they meet at an absorption device internal to the
operational amplifier. This protection circuitry is
intended to remain inactive during normal circuit
operation.
An ESD event produces a short duration,
high-voltage pulse that is transformed into a short
duration, high-current pulse as it discharges through
a semiconductor device. The ESD protection circuits
are designed to provide a current path around the
operational amplifier core to prevent it from being
damaged. The energy absorbed by the protection
circuitry is then dissipated as heat.
When an ESD voltage develops across two or more
of the amplifier device pins, current flows through one
or more of the steering diodes. Depending on the
path that the current takes, the absorption device
may activate. The absorption device has a trigger, or
threshold voltage, that is above the normal operating
voltage of the OPAx141 but below the device
breakdown voltage level. Once this threshold is
exceeded, the absorption device quickly activates
and clamps the voltage across the supply rails to a
safe level.
When the operational amplifier connects into a circuit
such as the one Figure 35 shows, the ESD protection
components are intended to remain inactive and not
become involved in the application circuit operation.
However, circumstances may arise where an applied
voltage exceeds the operating voltage range of a
given pin. Should this condition occur, there is a risk
that some of the internal ESD protection circuits may
be biased on, and conduct current. Any such current
flow occurs through steering diode paths and rarely
involves the absorption device.
16
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SBOS510B – MARCH 2010 – REVISED MAY 2010
Figure 35 depicts a specific example where the input
voltage, VIN, exceeds the positive supply voltage
(+VS) by 500mV or more. Much of what happens in
the circuit depends on the supply characteristics. If
+VS can sink the current, one of the upper input
steering diodes conducts and directs current to +VS.
Excessively high current levels can flow with
increasingly higher VIN. As a result, the datasheet
specifications recommend that applications limit the
input current to 10mA.
Again, it depends on the supply characteristic while at
0V, or at a level below the input signal amplitude. If
the supplies appear as high impedance, then the
operational amplifier supply current may be supplied
by the input source via the current steering diodes.
This state is not a normal bias condition; the amplifier
most likely will not operate normally. If the supplies
are low impedance, then the current through the
steering diodes can become quite high. The current
level depends on the ability of the input source to
deliver current, and any resistance in the input path.
If the supply is not capable of sinking the current, VIN
may begin sourcing current to the operational
amplifier, and then take over as the source of positive
supply voltage. The danger in this case is that the
voltage can rise to levels that exceed the operational
amplifier absolute maximum ratings.
If there is an uncertainty about the ability of the
supply to absorb this current, external zener diodes
may be added to the supply pins as shown in
Figure 35. The zener voltage must be selected such
that the diode does not turn on during normal
operation.
Another common question involves what happens to
the amplifier if an input signal is applied to the input
while the power supplies +VS and/or –VS are at 0V.
However, its zener voltage should be low enough so
that the zener diode conducts if the supply pin begins
to rise above the safe operating supply voltage level.
(2)
TVS
RF
+V
+VS
OPA141
RI
ESD CurrentSteering Diodes
-In
(3)
RS
+In
Op Amp
Core
Edge-Triggered ESD
Absorption Circuit
ID
VIN
Out
RL
(1)
-V
-VS
(2)
TVS
(1)
VIN = +VS + 500mV.
(2)
TVS: +VS(max) > VTVSBR (Min) > +VS
(3)
Suggested value approximately 1kΩ.
Figure 35. Equivalent Internal ESD Circuitry and Its Relation to a Typical Circuit Application
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17
PACKAGE OPTION ADDENDUM
www.ti.com
28-Apr-2022
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
OPA141AID
ACTIVE
SOIC
D
8
75
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
O141A
OPA141AIDGKR
ACTIVE
VSSOP
DGK
8
2500
RoHS & Green
Call TI | NIPDAUAG
Level-2-260C-1 YEAR
-40 to 125
141
OPA141AIDGKT
ACTIVE
VSSOP
DGK
8
250
RoHS & Green
Call TI | NIPDAUAG
Level-2-260C-1 YEAR
-40 to 125
141
OPA141AIDR
ACTIVE
SOIC
D
8
2500
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
O141A
OPA2141AID
ACTIVE
SOIC
D
8
75
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
O2141A
OPA2141AIDGKR
ACTIVE
VSSOP
DGK
8
2500
RoHS & Green
Call TI | NIPDAUAG
Level-2-260C-1 YEAR
-40 to 125
2141
OPA2141AIDGKT
ACTIVE
VSSOP
DGK
8
250
RoHS & Green
Call TI | NIPDAUAG
Level-2-260C-1 YEAR
-40 to 125
2141
OPA2141AIDR
ACTIVE
SOIC
D
8
2500
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
O2141A
OPA4141AID
ACTIVE
SOIC
D
14
50
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
O4141A
OPA4141AIDR
ACTIVE
SOIC
D
14
2500
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
O4141A
OPA4141AIPW
ACTIVE
TSSOP
PW
14
90
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
O4141A
OPA4141AIPWR
ACTIVE
TSSOP
PW
14
2000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
O4141A
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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