OPA656TDB2

OPA656-DIE www.ti.com SBOS596 – MARCH 2012 WIDEBAND, UNITY-GAIN STABLE, FET-INPUT OPERATIONAL AMPLIFIER Check for Samples: OPA656-DIE FEATURES 1 • • • • • • APPLICATIONS Unity-Gain Bandwidth Low Input Bias Current Low Offset and Drift Low DL High Output Current Low Input Voltage Noise • • • • • • Wideband Photodiode Amplifiers Sample-and-Hold Buffers CCD Output Buffers ADC Input Buffers Wideband Precision Amplifiers Test and Measurement Front Ends DESCRIPTION The OPA656 combines a very wideband, unity-gain stable, voltage-feedback op amp with a FET-input stage to offer an ultra high dynamic-range amplifier for ADC (analog-to-digital converter) buffering and transimpedance applications. Extremely low DC errors give good precision in optical applications. The high unity-gain stable bandwidth and JFET input allows exceptional performance in high-speed, low-noise integrators. ORDERING INFORMATION (1) (1) (2) PRODUCT PACKAGE DESIGNATOR PACKAGE (2) OPA656 TD Bare die in waffle pack ORDERABLE PART NUMBER PACKAGE QUANTITY OPA656TDB1 400 OPA656TDB2 10 For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI web site at www.ti.com. Processing is per the Texas Instruments commercial production baseline and is in compliance with the Texas Instruments Quality Control System in effect at the time of manufacture. Electrical screening consists of DC parametric and functional testing at room temperature only. Unless otherwise specified by Texas Instruments AC performance and performance over temperature is not warranted. Visual Inspection is performed in accordance with MIL-STD-883 Test Method 2010 Condition B at 75X minimum. 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2012, Texas Instruments Incorporated OPA656-DIE SBOS596 – MARCH 2012 www.ti.com This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. BARE DIE INFORMATION DIE THICKNESS BACKSIDE FINISH BACKSIDE POTENTIAL BOND PAD METALLIZATION COMPOSITION BOND PAD THICKNESS 15 mils. Silicon with backgrind VS- TiW/AlCu (0.5%) 1100 nm Table 1. Bond Pad Coordinates in Microns (1) (1) 2 DESCRIPTION PAD NUMBER X MIN Y MIN X MAX Y MAX Inverting Input 1 27 623 127 723 NonInverting Input 2 27 53 127 153 N/C 3 181 53 281 153 Output 4 723 27 823 127 VS- 5 723 337 823 439 VS+ 6 723 649 823 749 N/C 7 181 623 281 723 Substrate is VS-. Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Link(s): OPA656-DIE PACKAGE OPTION ADDENDUM www.ti.com 4-Feb-2021 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) (3) Device Marking (4/5) (6) OPA656TDB1 ACTIVE 0 400 RoHS & Green Call TI N / A for Pkg Type OPA656TDB2 ACTIVE 0 10 RoHS & Green Call TI N / A for Pkg Type (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of