OPA657TD2

Product Folder Sample & Buy Tools & Software Technical Documents Support & Community OPA657-DIE SBOS787 – AUGUST 2016 OPA657-DIE 1.6-GHz, Low-Noise, FET-Input Operational Amplifier 1 Features 3 Description • • • • • • • • The OPA657 device combines a high gain-bandwidth, low-distortion, voltage-feedback operational amplifier with a low voltage noise JFET-input stage to offer a very high dynamic range amplifier for high-precision analog-to-digital converter (ADC) driving or wideband transimpedance applications. Photodiode applications achieve improved noise and bandwidth using this decompensated, high gain-bandwidth amplifier. 1 High Gain Bandwidth Product: 1.6 GHz High Bandwidth 275 MHz (G = 10) Slew Rate 700 V/µs (G = 10, 1-V Step) Low-Input Offset Voltage: ±250 µV Low-Input Bias Current: 2 pA Low-Input Voltage Noise: 4.8 nV/√Hz High-Output Current: 70 mA Fast Overdrive Recovery Very low level signals can be significantly amplified in a single OPA657 gain stage with exceptional bandwidth and accuracy. The very low input bias current and capacitance supports this performance even for relatively high source impedance. Broadband photodetector applications benefit from the low voltage noise JFET inputs for the OPA657. The JFET input contributes virtually no current noise, which makes the device ideal for high-gain photodiode applications. 2 Applications • • • • • • (1) (2) Wideband Photodiode Amplifiers Wafer Scanning Equipment ADC Input Amplifiers Test and Measurement Front Ends High Gain Precision Amplifiers Optical Time Domain Reflectometry (OTDR) Ordering Information (1) PRODUCT PACKAGE DESIGNATOR PACKAGE OPA657 TD Bare Die in Gel Pak VR (2) ORDERABLE PART NUMBER PACKAGE QUANTITY OPA657TD1 324 OPA657TD2 10 For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI web site at www.ti.com. Processing is per the Texas Instruments commercial production baseline and is in compliance with the Texas Instruments Quality Control System in effect at the time of manufacture. Electrical screening consists of DC parametric and functional testing at room temperature only. Unless otherwise specified by Texas Instruments AC performance and performance over temperature is not warranted. Visual Inspection is performed in accordance with MIL-STD-883 Test Method 2010 Condition B at 75X minimum. 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. OPA657-DIE SBOS787 – AUGUST 2016 www.ti.com This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. 4 Bare Die Information DIE THICKNESS BACKSIDE FINISH BACKSIDE POTENTIAL BOND PAD METALLIZATION COMPOSITION BOND PAD THICKNESS 15 mils. Silicon with backgrind VS- TiW/AlCu (0.5%) 1100 nm Bond Pad Coordinates in Microns (1) (1) 2 DESCRIPTION PAD NUMBER X MIN Y MIN X MAX Y MAX Inverting input 1 27 623 127 723 NonInverting input 2 27 53 127 153 N/C 3 181 53 281 153 Output 4 723 27 823 127 VS– 5 723 337 823 439 VS+ 6 723 649 823 749 N/C 7 181 623 281 723 Substrate is VS–. Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated Product Folder Links: OPA657-DIE PACKAGE OPTION ADDENDUM www.ti.com 24-Apr-2019 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish MSL Peak Temp (2) (6) (3) Op Temp (°C) Device Marking (4/5) OPA657TD1 ACTIVE 0 324 TBD Call TI Call TI -40 to 85 OPA657TD2 ACTIVE 0 120 TBD Call TI Call TI -40 to 85 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of