OPA659EVM

Sample & Buy Product Folder Support & Community Tools & Software Technical Documents OPA659 SBOS342C – DECEMBER 2008 – REVISED NOVEMBER 2015 OPA659 Wideband, Unity-Gain Stable, JFET-Input Operational Amplifier 1 Features 3 Description • • • • • • • • • The OPA659 combines a very wideband, unity-gain stable, voltage-feedback operational amplifier with a JFET-input stage to offer an ultra-high dynamic range amplifier for high impedance buffering in data acquisition applications such as oscilloscope frontend amplifiers and machine vision applications such as photodiode transimpedance amplifiers used in wafer inspection. 1 High Bandwidth: 650 MHz (G = 1 V/V) High Slew Rate: 2550 V/μs (4-V Step) Excellent THD: –78 dBc at 10 MHz Low Input Voltage Noise: 8.9 nV/√Hz Fast Overdrive Recovery: 8 ns Fast Settling time (1% 4-V Step): 8 ns Low Input Offset Voltage: ±1 mV Low Input Bias Current: ±10 pA High Output Current: 70 mA The wide 650-MHz unity-gain bandwidth is complemented by a very high 2550-V/μs slew rate. 2 Applications • • • • • • High-Impedance Data Acquisition Input Amplifiers High-Impedance Oscilloscope Input Amplifiers Wideband Photodiode Transimpedance Amplifiers Wafer Scanning Equipment Optical Time-Domain Reflectometry (OTDR) High-Speed Time-of-Flight (TOF) Sensing The high input impedance and low bias current provided by the JFET input are supported by the low 8.9-nV/√Hz input voltage noise to achieve a very low integrated noise in wideband photodiode transimpedance applications. Broad transimpedance bandwidths are possible with the high 350-MHz gain bandwidth product of this device. Where lower speed with lower quiescent current is required, consider the OPA656. Where unity-gain stability is not required, consider the OPA657. Device Information(1) PART NUMBER OPA659 PACKAGE BODY SIZE (NOM) SOT-23 (5) 2.90 mm × 1.60 mm SON (8) 3.00 mm × 3.00 mm (1) For all available packages, see the orderable addendum at the end of the data sheet. Typical Application Transimpedance Gain vs Frequency +6V 130 VOUT ROUT OPA659 RF Photo Diode ID CD CF 0.1mF -VB -6V 10mF RF = 1MW, CF = Open 120 10mF 50W Load Transimpedance Gain (dBW) 0.1mF RF = 100kW, CF = Open 110 RF = 10kW, CF = Open 100 90 RF = 100kW, CF = 0.5pF 80 70 RF = 10kW, CF = 1.5pF RF = 1kW, CF = Open 60 50 40 100k RF = 1kW, CF = 4.7pF 10M 1M 100M Frequency (Hz) 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. OPA659 SBOS342C – DECEMBER 2008 – REVISED NOVEMBER 2015 www.ti.com Table of Contents 1 2 3 4 5 6 7 8 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Related Operational Amplifier Products.............. Pin Configuration and Functions ......................... Specifications......................................................... 1 1 1 2 3 3 3 7.1 7.2 7.3 7.4 7.5 7.6 3 4 4 4 4 6 Absolute Maximum Ratings ...................................... ESD Ratings.............................................................. Recommended Operating Conditions....................... Thermal Information .................................................. Electrical Characteristics........................................... Typical Characteristics .............................................. Detailed Description ............................................ 13 8.1 Overview ................................................................. 13 8.2 Feature Description................................................. 13 8.3 Device Functional Modes........................................ 13 9 Application Information....................................... 14 9.1 Application Information............................................ 14 9.2 Typical Application .................................................. 18 10 Power Supply Recommendations ..................... 20 11 Layout................................................................... 21 11.1 11.2 11.3 11.4 11.5 Layout Guidelines ................................................. Layout Example .................................................... Thermal Pad Information ...................................... Schematic and PCB Layout .................................. Evaluation Module................................................. 21 22 22 23 24 12 Device and Documentation Support ................. 25 12.1 12.2 12.3 12.4 12.5 Device Support .................................................... Community Resources.......................................... Trademarks ........................................................... Electrostatic Discharge Caution ............................ Glossary ................................................................ 25 25 25 25 25 13 Mechanical, Packaging, and Orderable Information ........................................................... 25 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision B (August 2009) to Revision C Page • Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section ................................................................................................. 1 • Deleted THERMAL CHARACTERISTICS row from Electrical Characteristics ..................................................................... 5 Changes from Revision A (March, 2009) to Revision B Page • Removed lead temperature specification from Absolute Maximum Ratings table ................................................................. 3 • Added DRB package to test condition for Input Offset Voltage parameter, TA = –40°C to 85°C .......................................... 5 • Added performance specifications for Input Offset Voltage parameter, DBV package.......................................................... 5 • Added performance specifications for Average Offset Voltage Drift parameter, DBV package ............................................ 5 • Added footnote (2) to Electrical Characteristics (VS = ±6V) table .......................................................................................... 5 • Added paragraph (f) to the Board Layout section ................................................................................................................ 22 Changes from Original (December, 2008) to Revision A • 2 Page Changed Changed ordering information for SOTS23-5 (DBV) package and added footnote; availability expected 2Q 2009 ....................................................................................................................................................................................... 3 Submit Documentation Feedback Copyright © 2008–2015, Texas Instruments Incorporated Product Folder Links: OPA659 OPA659 www.ti.com SBOS342C – DECEMBER 2008 – REVISED NOVEMBER 2015 5 Related Operational Amplifier Products DEVICE VS (V) BW (MHz) SLEW RATE (V/μs) VOLTAGE NOISE (nV/√Hz) OPA659 ±6 350 2550 8.9 Unity-Gain Stable FET-Input OPA656 ±5 230 290 7 Unity-Gain Stable FET-Input OPA657 ±5 1600 700 4.8 Gain of +7 stable FET Input LMH6629 5 4000 1600 0.69 Gain of +10 stable Bipolar Input THS4631 ±15 210 1000 7 Unity-Gain Stable FET-Input OPA857 5 4750 220 — Programmable Gain (5 kΩ / 20 kΩ) Transimpedance Amplifier AMPLIFIER DESCRIPTION 6 Pin Configuration and Functions DRB Package 8-Pin VSON With Exposed Thermal Pad Top View DRV Package 5-Pin SOT23 Top View NC 1 8 NC Inverting Input 2 7 +VS Noninverting Input 3 6 Output -VS 4 5 NC Output 1 -VS 2 Noninverting Input 3 5 +VS 4 Inverting Input NC: Not connected. Pin Functions PIN NAME SOIC SOT-23 TYPE DESCRIPTION 1 NC 5 — — No Connection I Inverting Input 8 VIN– 2 4 VIN+ 3 3 I Noninverting Input VOUT 6 1 O Output of amplifier –VS 4 2 POW Negative Power Supply +VS 7 5 POW Positive Power Supply 7 Specifications 7.1 Absolute Maximum Ratings Over operating free-air temperature range (unless otherwise noted). MAX UNIT Power Supply Voltage VS+ to VS– MIN ±6.5 V Input Voltage ±VS V Input Current 100 mA 100 mA Output Current Continuous Power Dissipation See Thermal Information Operating Free Air Temperature, TA 85 °C Maximum Junction Temperature, TJ –40 150 °C Maximum Junction Temperature, TJ (continuous operation for long term reliability) 125 °C 150 °C Storage Temperature, Tstg –65 Submit Documentation Feedback Copyright © 2008–2015, Texas Instruments Incorporated Product Folder Links: OPA659 3 OPA659 SBOS342C – DECEMBER 2008 – REVISED NOVEMBER 2015 www.ti.com 7.2 ESD Ratings VALUE V(ESD) (1) (2) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) ±4000 Charged-device model (CDM), per JEDEC specification JESD22C101 (2) ±1000 Machine model (MM) ±200 UNIT V JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 7.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) VS Total supply voltage TA Ambient temperature MIN NOM MAX 7 12 13 UNIT V –40 25 85 °C 7.4 Thermal Information OPA659 THERMAL METRIC (1) DRB (VSON) DRV (SOT23) 8 PINS 5 PINS UNIT 209 °C/W RθJA Junction-to-ambient thermal resistance 56.3 RθJC(top) Junction-to-case (top) thermal resistance 63.7 124 °C/W RθJB Junction-to-board thermal resistance 31.9 38.1 °C/W ψJT Junction-to-top characterization parameter 3.2 15 °C/W ψJB Junction-to-board characterization parameter 32.1 37.2 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance 15.3 — °C/W (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. 7.5 Electrical Characteristics At RF = 0 Ω, G = 1 V/V, and RL = 100 Ω, TA = 25°C, VS = ±6 V unless otherwise noted. PARAMETER TEST CONDITIONS TEST LEVEL (1 MIN TYP MAX UNIT ) AC PERFORMANCE VO = 200 mVPP, G = 1 V/V C 650 MHz VO = 200 mVPP, G = 2 V/V C 335 MHz VO = 200 mVPP, G = 5 V/V C 75 MHz VO = 200 mVPP, G = 10 V/V C 35 MHz Gain Bandwidth Product G > 10 V/V C 350 MHz Bandwidth for 0.1dB Flatness G = 2 V/V, VO = 2VPP C 55 MHz Large-Signal Bandwidth VO = 2 VPP, G = 1 V/V B 575 MHz Slew Rate VO = 4-V Step, G = 1 V/V B 2550 V/μs Rise and Fall Time VO = 4-V Step, G = 1 V/V C 1.3 ns Settling Time to 1% VO = 4-V Step, G = 1 V/V C 8 ns Pulse Response Overshoot VO = 4-V Step, G = 1 V/V C 12% Harmonic Distortion, 2nd harmonic VO = 2 VPP, G = 1 V/V, f = 10 MHz C –79 dBc Harmonic Distortion, 3rd harmonic VO = 2 VPP, G = 1 V/V, f = 10 MHz C –100 dBc Intermodulation Distortion, 2nd intermodulation VO= 2 VPP Envelope (each tone 1 VPP), G = 2 V/V, f1 = 10 MHz, f2 = 11 MHz C –72 dBc Intermodulation Distortion, 3rd intermodulation VO= 2 VPP Envelope (each tone 1 VPP), G = 2 V/V, f1 = 10 MHz, f2 = 11 MHz C –96 dBc Small-Signal Bandwidth (1) 4 Test levels: (A) 100% tested at 25°C. Over temperature limits set by characterization and simulation. (B) Limits set by characterization and simulation. (C) Typical value only for information. Submit Documentation Feedback Copyright © 2008–2015, Texas Instruments Incorporated Product Folder Links: OPA659 OPA659 www.ti.com SBOS342C – DECEMBER 2008 – REVISED NOVEMBER 2015 Electrical Characteristics (continued) At RF = 0 Ω, G = 1 V/V, and RL = 100 Ω, TA = 25°C, VS = ±6 V unless otherwise noted. PARAMETER TEST LEVEL (1 TEST CONDITIONS MIN TYP MAX UNIT ) Input Voltage Noise f > 100 kHz C 8.9 nV/√Hz Input Current Noise f < 10 MHz C 1.8 fA/√Hz TA = 25°C, VCM = 0 V, RL = 100 Ω A 52 58 dB TA = –40°C to 85°C, VCM = 0 V, RL = 100 Ω B 49 55 TA = 25°C, VCM = 0 V A ±1 ±5 mV DRB package B ±1.5 ±7.6 mV DBV package B ±1.5 ±8.9 mV DRB package B ±10 ±40 μV/°C DBV package B ±10 ±60 μV/°C TA = 25°C, VCM = 0 V A ±10 ±50 pA TA = 0°C to 70°C, VCM = 0 V B ±240 ±1200 pA TA = –40°C to 85°C, VCM = 0 V B ±640 ±3200 TA = 0°C to 70°C, VCM = 0 V B ±5 ±26 pA/°C TA = –40°C to 85°C, VCM = 0 V B ±7 ±34 pA/°C TA = 25°C, VCM = 0 V A ±5 ±25 pA TA = 0°C to 70°C, VCM = 0 V B ±120 ±600 pA TA = –40°C to 85°C, VCM = 0 V B ±320 ±1600 pA TA = 25°C A ±3 ±3.5 TA = –40°C to 85°C B ±2.87 ±3.37 V TA = 25°C, VCM = ±0.5 V A 68 70 dB TA = –40°C to 85°C, VCM = ±0.5 V B 64 66 dB DC PERFORMANCE Open-Loop Voltage Gain (AOL) Input Offset Voltage Average input-offset voltage drift (2) Input Bias Current Average input bias current drift Input Offset Current TA = –40°C to 85°C, VCM = 0 V DRB package TA = –40°C to 85°C, VCM = 0 V dB pA INPUT Common-Mode Input Range (3) Common-Mode Rejection Ratio V Input Impedance Input impedance, differential 1012 ∥ 1 C Ω ∥ pF 12 Input impedance, common-mode 10 C ∥ 2.5 Ω ∥ pF OUTPUT No Load A ±4.6 ±4.8 V RL = 100 Ω A ±3.8 ±4 V No Load B ±4.45 ±4.65 V RL = 100 Ω B ±3.65 ±3.85 A ±60 ±70 mA TA = –40°C to 85°C B ±56 ±65 mA G = 1 V/V, f = 100 kHz C 0.04 Ω TA = 25°C, Output Voltage Swing TA = –40°C to 85°C Output Current, Sourcing, Sinking Closed-Loop Output Impedance TA = 25°C V POWER SUPPLY Operating Voltage Quiescent Current Power-Supply Rejection Ratio (PSRR) (2) (3) B ±3.5 ±6 ±6.5 V TA = 25°C A 30.5 32 33.5 mA TA = –40°C to 85°C B 28.3 35.7 mA TA = 25°C, VS = ±5.5 V to ±6.5 V A 58 62 dB TA = –40°C to 85°C, VS = ±5.5 V to ±6.5 V A 56 60 dB DRB package only. Tested