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OPA659
SBOS342C – DECEMBER 2008 – REVISED NOVEMBER 2015
OPA659 Wideband, Unity-Gain Stable, JFET-Input
Operational Amplifier
1 Features
3 Description
•
•
•
•
•
•
•
•
•
The OPA659 combines a very wideband, unity-gain
stable, voltage-feedback operational amplifier with a
JFET-input stage to offer an ultra-high dynamic range
amplifier for high impedance buffering in data
acquisition applications such as oscilloscope frontend amplifiers and machine vision applications such
as photodiode transimpedance amplifiers used in
wafer inspection.
1
High Bandwidth: 650 MHz (G = 1 V/V)
High Slew Rate: 2550 V/μs (4-V Step)
Excellent THD: –78 dBc at 10 MHz
Low Input Voltage Noise: 8.9 nV/√Hz
Fast Overdrive Recovery: 8 ns
Fast Settling time (1% 4-V Step): 8 ns
Low Input Offset Voltage: ±1 mV
Low Input Bias Current: ±10 pA
High Output Current: 70 mA
The wide 650-MHz unity-gain bandwidth is
complemented by a very high 2550-V/μs slew rate.
2 Applications
•
•
•
•
•
•
High-Impedance Data Acquisition Input Amplifiers
High-Impedance Oscilloscope Input Amplifiers
Wideband Photodiode Transimpedance Amplifiers
Wafer Scanning Equipment
Optical Time-Domain Reflectometry (OTDR)
High-Speed Time-of-Flight (TOF) Sensing
The high input impedance and low bias current
provided by the JFET input are supported by the low
8.9-nV/√Hz input voltage noise to achieve a very low
integrated
noise
in
wideband
photodiode
transimpedance applications.
Broad transimpedance bandwidths are possible with
the high 350-MHz gain bandwidth product of this
device.
Where lower speed with lower quiescent current is
required, consider the OPA656. Where unity-gain
stability is not required, consider the OPA657.
Device Information(1)
PART NUMBER
OPA659
PACKAGE
BODY SIZE (NOM)
SOT-23 (5)
2.90 mm × 1.60 mm
SON (8)
3.00 mm × 3.00 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Typical Application
Transimpedance Gain vs Frequency
+6V
130
VOUT
ROUT
OPA659
RF
Photo
Diode
ID
CD
CF
0.1mF
-VB
-6V
10mF
RF = 1MW, CF = Open
120
10mF
50W Load
Transimpedance Gain (dBW)
0.1mF
RF = 100kW, CF = Open
110
RF = 10kW,
CF = Open
100
90
RF = 100kW,
CF = 0.5pF
80
70
RF = 10kW, CF = 1.5pF
RF = 1kW, CF = Open
60
50
40
100k
RF = 1kW, CF = 4.7pF
10M
1M
100M
Frequency (Hz)
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
OPA659
SBOS342C – DECEMBER 2008 – REVISED NOVEMBER 2015
www.ti.com
Table of Contents
1
2
3
4
5
6
7
8
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Related Operational Amplifier Products..............
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
3
3
7.1
7.2
7.3
7.4
7.5
7.6
3
4
4
4
4
6
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Typical Characteristics ..............................................
Detailed Description ............................................ 13
8.1 Overview ................................................................. 13
8.2 Feature Description................................................. 13
8.3 Device Functional Modes........................................ 13
9
Application Information....................................... 14
9.1 Application Information............................................ 14
9.2 Typical Application .................................................. 18
10 Power Supply Recommendations ..................... 20
11 Layout................................................................... 21
11.1
11.2
11.3
11.4
11.5
Layout Guidelines .................................................
Layout Example ....................................................
Thermal Pad Information ......................................
Schematic and PCB Layout ..................................
Evaluation Module.................................................
21
22
22
23
24
12 Device and Documentation Support ................. 25
12.1
12.2
12.3
12.4
12.5
Device Support ....................................................
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
25
25
25
25
25
13 Mechanical, Packaging, and Orderable
Information ........................................................... 25
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision B (August 2009) to Revision C
Page
•
Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section ................................................................................................. 1
•
Deleted THERMAL CHARACTERISTICS row from Electrical Characteristics ..................................................................... 5
Changes from Revision A (March, 2009) to Revision B
Page
•
Removed lead temperature specification from Absolute Maximum Ratings table ................................................................. 3
•
Added DRB package to test condition for Input Offset Voltage parameter, TA = –40°C to 85°C .......................................... 5
•
Added performance specifications for Input Offset Voltage parameter, DBV package.......................................................... 5
•
Added performance specifications for Average Offset Voltage Drift parameter, DBV package ............................................ 5
•
Added footnote (2) to Electrical Characteristics (VS = ±6V) table .......................................................................................... 5
•
Added paragraph (f) to the Board Layout section ................................................................................................................ 22
Changes from Original (December, 2008) to Revision A
•
2
Page
Changed Changed ordering information for SOTS23-5 (DBV) package and added footnote; availability expected 2Q
2009 ....................................................................................................................................................................................... 3
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Copyright © 2008–2015, Texas Instruments Incorporated
Product Folder Links: OPA659
OPA659
www.ti.com
SBOS342C – DECEMBER 2008 – REVISED NOVEMBER 2015
5 Related Operational Amplifier Products
DEVICE
VS (V)
BW (MHz)
SLEW RATE
(V/μs)
VOLTAGE NOISE
(nV/√Hz)
OPA659
±6
350
2550
8.9
Unity-Gain Stable FET-Input
OPA656
±5
230
290
7
Unity-Gain Stable FET-Input
OPA657
±5
1600
700
4.8
Gain of +7 stable FET Input
LMH6629
5
4000
1600
0.69
Gain of +10 stable Bipolar Input
THS4631
±15
210
1000
7
Unity-Gain Stable FET-Input
OPA857
5
4750
220
—
Programmable Gain (5 kΩ / 20 kΩ)
Transimpedance Amplifier
AMPLIFIER DESCRIPTION
6 Pin Configuration and Functions
DRB Package
8-Pin VSON With Exposed Thermal Pad
Top View
DRV Package
5-Pin SOT23
Top View
NC
1
8
NC
Inverting Input
2
7
+VS
Noninverting Input
3
6
Output
-VS
4
5
NC
Output
1
-VS
2
Noninverting Input
3
5
+VS
4
Inverting Input
NC: Not connected.
Pin Functions
PIN
NAME
SOIC
SOT-23
TYPE
DESCRIPTION
1
NC
5
—
—
No Connection
I
Inverting Input
8
VIN–
2
4
VIN+
3
3
I
Noninverting Input
VOUT
6
1
O
Output of amplifier
–VS
4
2
POW
Negative Power Supply
+VS
7
5
POW
Positive Power Supply
7 Specifications
7.1 Absolute Maximum Ratings
Over operating free-air temperature range (unless otherwise noted).
MAX
UNIT
Power Supply Voltage VS+ to VS–
MIN
±6.5
V
Input Voltage
±VS
V
Input Current
100
mA
100
mA
Output Current
Continuous Power Dissipation
See Thermal Information
Operating Free Air Temperature, TA
85
°C
Maximum Junction Temperature, TJ
–40
150
°C
Maximum Junction Temperature, TJ (continuous operation for long term reliability)
125
°C
150
°C
Storage Temperature, Tstg
–65
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Product Folder Links: OPA659
3
OPA659
SBOS342C – DECEMBER 2008 – REVISED NOVEMBER 2015
www.ti.com
7.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
±4000
Charged-device model (CDM), per JEDEC specification JESD22C101 (2)
±1000
Machine model (MM)
±200
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
VS
Total supply voltage
TA
Ambient temperature
MIN
NOM
MAX
7
12
13
UNIT
V
–40
25
85
°C
7.4 Thermal Information
OPA659
THERMAL METRIC
(1)
DRB (VSON)
DRV (SOT23)
8 PINS
5 PINS
UNIT
209
°C/W
RθJA
Junction-to-ambient thermal resistance
56.3
RθJC(top)
Junction-to-case (top) thermal resistance
63.7
124
°C/W
RθJB
Junction-to-board thermal resistance
31.9
38.1
°C/W
ψJT
Junction-to-top characterization parameter
3.2
15
°C/W
ψJB
Junction-to-board characterization parameter
32.1
37.2
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
15.3
—
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
7.5 Electrical Characteristics
At RF = 0 Ω, G = 1 V/V, and RL = 100 Ω, TA = 25°C, VS = ±6 V unless otherwise noted.
PARAMETER
TEST CONDITIONS
TEST
LEVEL (1
MIN
TYP
MAX
UNIT
)
AC PERFORMANCE
VO = 200 mVPP, G = 1 V/V
C
650
MHz
VO = 200 mVPP, G = 2 V/V
C
335
MHz
VO = 200 mVPP, G = 5 V/V
C
75
MHz
VO = 200 mVPP, G = 10 V/V
C
35
MHz
Gain Bandwidth Product
G > 10 V/V
C
350
MHz
Bandwidth for 0.1dB Flatness
G = 2 V/V, VO = 2VPP
C
55
MHz
Large-Signal Bandwidth
VO = 2 VPP, G = 1 V/V
B
575
MHz
Slew Rate
VO = 4-V Step, G = 1 V/V
B
2550
V/μs
Rise and Fall Time
VO = 4-V Step, G = 1 V/V
C
1.3
ns
Settling Time to 1%
VO = 4-V Step, G = 1 V/V
C
8
ns
Pulse Response Overshoot
VO = 4-V Step, G = 1 V/V
C
12%
Harmonic Distortion, 2nd harmonic
VO = 2 VPP, G = 1 V/V, f = 10 MHz
C
–79
dBc
Harmonic Distortion, 3rd harmonic
VO = 2 VPP, G = 1 V/V, f = 10 MHz
C
–100
dBc
Intermodulation Distortion, 2nd
intermodulation
VO= 2 VPP Envelope (each tone 1 VPP),
G = 2 V/V, f1 = 10 MHz, f2 = 11 MHz
C
–72
dBc
Intermodulation Distortion, 3rd
intermodulation
VO= 2 VPP Envelope (each tone 1 VPP),
G = 2 V/V, f1 = 10 MHz, f2 = 11 MHz
C
–96
dBc
Small-Signal Bandwidth
(1)
4
Test levels: (A) 100% tested at 25°C. Over temperature limits set by characterization and simulation. (B) Limits set by characterization
and simulation. (C) Typical value only for information.
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Product Folder Links: OPA659
OPA659
www.ti.com
SBOS342C – DECEMBER 2008 – REVISED NOVEMBER 2015
Electrical Characteristics (continued)
At RF = 0 Ω, G = 1 V/V, and RL = 100 Ω, TA = 25°C, VS = ±6 V unless otherwise noted.
PARAMETER
TEST
LEVEL (1
TEST CONDITIONS
MIN
TYP
MAX
UNIT
)
Input Voltage Noise
f > 100 kHz
C
8.9
nV/√Hz
Input Current Noise
f < 10 MHz
C
1.8
fA/√Hz
TA = 25°C, VCM = 0 V, RL = 100 Ω
A
52
58
dB
TA = –40°C to 85°C, VCM = 0 V, RL = 100 Ω
B
49
55
TA = 25°C, VCM = 0 V
A
±1
±5
mV
DRB package
B
±1.5
±7.6
mV
DBV package
B
±1.5
±8.9
mV
DRB package
B
±10
±40
μV/°C
DBV package
B
±10
±60
μV/°C
TA = 25°C, VCM = 0 V
A
±10
±50
pA
TA = 0°C to 70°C, VCM = 0 V
B
±240
±1200
pA
TA = –40°C to 85°C, VCM = 0 V
B
±640
±3200
TA = 0°C to 70°C, VCM = 0 V
B
±5
±26
pA/°C
TA = –40°C to 85°C, VCM = 0 V
B
±7
±34
pA/°C
TA = 25°C, VCM = 0 V
A
±5
±25
pA
TA = 0°C to 70°C, VCM = 0 V
B
±120
±600
pA
TA = –40°C to 85°C, VCM = 0 V
B
±320
±1600
pA
TA = 25°C
A
±3
±3.5
TA = –40°C to 85°C
B
±2.87
±3.37
V
TA = 25°C, VCM = ±0.5 V
A
68
70
dB
TA = –40°C to 85°C, VCM = ±0.5 V
B
64
66
dB
DC PERFORMANCE
Open-Loop Voltage Gain (AOL)
Input Offset Voltage
Average input-offset voltage drift (2)
Input Bias Current
Average input bias current drift
Input Offset Current
TA = –40°C to 85°C, VCM = 0 V DRB
package
TA = –40°C to 85°C, VCM = 0 V
dB
pA
INPUT
Common-Mode Input Range (3)
Common-Mode Rejection Ratio
V
Input Impedance
Input impedance, differential
1012 ∥ 1
C
Ω ∥ pF
12
Input impedance, common-mode
10
C
∥
2.5
Ω ∥ pF
OUTPUT
No Load
A
±4.6
±4.8
V
RL = 100 Ω
A
±3.8
±4
V
No Load
B
±4.45
±4.65
V
RL = 100 Ω
B
±3.65
±3.85
A
±60
±70
mA
TA = –40°C to 85°C
B
±56
±65
mA
G = 1 V/V, f = 100 kHz
C
0.04
Ω
TA = 25°C,
Output Voltage Swing
TA = –40°C to 85°C
Output Current, Sourcing, Sinking
Closed-Loop Output Impedance
TA = 25°C
V
POWER SUPPLY
Operating Voltage
Quiescent Current
Power-Supply Rejection Ratio (PSRR)
(2)
(3)
B
±3.5
±6
±6.5
V
TA = 25°C
A
30.5
32
33.5
mA
TA = –40°C to 85°C
B
28.3
35.7
mA
TA = 25°C, VS = ±5.5 V to ±6.5 V
A
58
62
dB
TA = –40°C to 85°C, VS = ±5.5 V to ±6.5 V
A
56
60
dB
DRB package only.
Tested