OPA857TD2

Product Folder Sample & Buy Tools & Software Technical Documents Support & Community OPA857-DIE SBOS813 – AUGUST 2016 OPA857-DIE Ultralow-Noise, Wideband, Selectable-Feedback Resistance Transimpedance Amplifier 1 Features 2 Applications • • • • • • • • 1 • • • • • Internal Midscale Reference Voltage Pseudo-Differential Output Voltage Wide Dynamic Range Closed-Loop Transimpedance Bandwidth: – 125 MHz (5-kΩ Transimpedance Gain, 1.5-pF External Parasitic Capacitance) – 105 MHz (20-kΩ Transimpedance Gain, 1.5-pF External Parasitic Capacitance) Ultralow Input-Referred Current Noise (Brickwall Filter BW = 135 MHz): – 15 nARMS (20-kΩ Transimpedance) Very Fast Overload Recovery Time: < 25 ns Internal Input Protection Diode Power Supply: – Voltage: 2.7 V to 3.6 V – Current: 23.4 mA Extended Temperature Range: –40°C to +85°C Photodiode Monitoring High-Speed I/V Conversions Optical Amplifiers CAT-Scanner Front-Ends 3 Description The OPA857-DIE is a wideband, fast overdrive recovery, fast-settling, ultralow-noise transimpedance amplifier targeted at photodiode monitoring applications. With selectable feedback resistance, the OPA857-DIE simplifies the design of highperformance optical systems. Very fast overload recovery time and internal input protection provide the best combination to protect the remainder of the signal chain from overdrive while minimizing recovery time. The two selectable transimpedance gain configurations allow high dynamic range and flexibility required in modern transimpedance amplifier applications. The device is characterized for operation over the full industrial temperature range from –40°C to +85°C. Ordering Information (1) (1) (2) PRODUCT PACKAGE DESIGNATOR PACKAGE OPA857-DIE TD Bare die in gel pak VR (2) ORDERABLE PART NUMBER PACKAGE QUANTITY OPA857TD1 324 OPA857TD2 10 For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI web site at www.ti.com. Processing is per the Texas Instruments commercial production baseline and is in compliance with the Texas Instruments Quality Control System in effect at the time of manufacture. Electrical screening consists of DC parametric and functional testing at room temperature only. Unless otherwise specified by Texas Instruments AC performance and performance over temperature is not warranted. Visual Inspection is performed in accordance with MIL-STD-883 Test Method 2010 Condition B at 75X minimum. 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. OPA857-DIE SBOS813 – AUGUST 2016 www.ti.com This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. 4 Bare Die Information DIE THICKNESS BACKSIDE FINISH BACKSIDE POTENTIAL BOND PAD METALLIZATION COMPOSITION BOND PAD THICKNESS 15 mils. Silicon with backgrind GND TiW/AlCu (0.5%) 1100 nm 1 14 13 12 15 2 11 3 10 4 9 5 7 6 807.0 8 0 40 0 40 785.0 2 Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated Product Folder Links: OPA857-DIE OPA857-DIE www.ti.com SBOS813 – AUGUST 2016 Bond Pad Coordinates in Microns NAME PAD NUMBER X MIN Y MIN X MAX Y MAX GND 1 15 637 90 712 Ground CTRL 2 15 465 90 540 Control pin for transimpedance gain. GND, logic 0 = 5-kΩ internal resistance; +VS, logic 1 = 20-kΩ internal resistance. GND 3 15 315 90 390 Ground GND 4 15 165 90 240 Ground OUTN 5 15 15 90 90 Common-mode voltage output reference GND 6 165 15 240 90 Ground GND 7 465 15 540 90 Ground OUT 8 615 15 690 90 Signal output +VS 9 615 165 690 240 Supply voltage +VS 10 615 315 690 390 Supply voltage +VS 11 615 465 690 540 Supply voltage GND 12 615 637 690 712 Ground TESD_SD 13 493.7 637 568.7 712 Test mode enable. Connect to GND for normal operation, and connect to +VS to enable test mode. TEST_IN 14 343.7 637 418.7 712 Test mode input. Connect to +VS during normal operation. IN 15 193.7 561.95 268.7 636.95 DESCRIPTION Input Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated Product Folder Links: OPA857-DIE 3 PACKAGE OPTION ADDENDUM www.ti.com 24-Apr-2019 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish MSL Peak Temp (2) (6) (3) Op Temp (°C) Device Marking (4/5) OPA857TD1 ACTIVE 0 324 TBD Call TI Call TI -40 to 85 OPA857TD2 ACTIVE 0 120 TBD Call TI Call TI -40 to 85 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of