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OPT101
SBBS002B – JANUARY 1994 – REVISED JUNE 2015
OPT101 Monolithic Photodiode and Single-Supply Transimpedance Amplifier
1 Features
3 Description
•
•
The OPT101 is a monolithic photodiode with on-chip
transimpedance amplifier. The integrated combination
of photodiode and transimpedance amplifier on a
single chip eliminates the problems commonly
encountered in discrete designs, such as leakage
current errors, noise pick-up, and gain peaking as a
result of stray capacitance. Output voltage increases
linearly with light intensity. The amplifier is designed
for single or dual power-supply operation.
1
•
•
•
•
•
Single Supply: 2.7 to 36 V
Photodiode Size: 0.090 inch × 0.090 inch
(2.29 mm × 2.29 mm)
Internal 1-MΩ Feedback Resistor
High Responsivity: 0.45 A/W (650 nm)
Bandwidth: 14 kHz at RF = 1 MΩ
Low Quiescent Current: 120 μA
Packages: Clear Plastic 8-pin PDIP and J-Lead
SOP
2 Applications
•
•
•
•
•
•
•
The 0.09 inch × 0.09 inch (2.29 mm × 2.29 mm)
photodiode operates in the photoconductive mode for
excellent linearity and low dark current.
The OPT101 operates from 2.7 V to 36 V supplies
and quiescent current is only 120 μA. This device is
available in clear plastic 8-pin PDIP, and J-lead SOP
for surface mounting. The temperature range is 0°C
to 70°C.
Medical Instrumentation
Laboratory Instrumentation
Position and Proximity Sensors
Photographic Analyzers
Barcode Scanners
Smoke Detectors
Currency Changers
Device Information(1)
PART NUMBER
OPT101
PACKAGE
BODY SIZE (NOM)
PDIP (8)
9.53 mm × 6.52 mm
SOP (8)
9.52 mm × 6.52 mm
(1) For all available packages, see the package option addendum
at the end of the data sheet.
Spectral Responsivity
2
1
1 MW
4
8 pF
5
Voltage Output (V/µW)
0.6
3 pF
0.7
Infrared
0.6
0.5
0.5
Using Internal
1-MW Resistor
0.4
0.4
0.3
0.3
0.2
0.2
0.1
0.1
Photodiode Responsivity (A/W)
Ultraviolet
Blue
0.7
Red
V+
Green
Yellow
Block Diagram
7.5 mV
l
0
200
VB
OPT101
8
300
400
500 600 700 800
Wavelength (nm)
900
0
1000 1100
3
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
OPT101
SBBS002B – JANUARY 1994 – REVISED JUNE 2015
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Table of Contents
1
2
3
4
5
6
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
6.1
6.2
6.3
6.4
6.5
6.6
6.7
6.8
4
4
4
4
5
6
6
7
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Electrical Characteristics: Photodiode ......................
Electrical Characteristics: Op Amp ...........................
Typical Characteristics ..............................................
7
Parameter Measurement Information ................ 10
8
Detailed Description ............................................ 11
7.1 Light Source Positioning and Uniformity ................. 10
8.1 Overview ................................................................. 11
8.2 Functional Block Diagram ....................................... 11
8.3 Feature Description................................................. 12
8.4 Device Functional Modes........................................ 15
9
Application and Implementation ........................ 16
9.1 Application Information............................................ 16
9.2 Typical Applications ................................................ 17
9.3 Dos and Don'ts ....................................................... 22
10 Power-Supply Recommendations ..................... 23
11 Layout................................................................... 23
11.1 Layout Guidelines ................................................. 23
11.2 Layout Example .................................................... 23
12 Device and Documentation Support ................. 24
12.1
12.2
12.3
12.4
12.5
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Moisture Sensitivity and Soldering........................
Glossary ................................................................
24
24
24
24
24
13 Mechanical, Packaging, and Orderable
Information ........................................................... 24
4 Revision History
Changes from Revision A (October 2003) to Revision B
Page
•
Added Pin Functions, ESD Ratings, Recommended Operating Conditions, and Thermal information tables, and
Parameter Measurement Information, Detailed Description, Application and Implementation, Power-Supply
Recommendations, Layout, and Device and Documentation Support sections; moved existing sections ............................ 1
•
Deleted W version of device from Tolerance parameter of Electrical Characteristics table; W version now obsolete ......... 5
•
Changed Application Information section ............................................................................................................................. 16
2
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SBBS002B – JANUARY 1994 – REVISED JUNE 2015
5 Pin Configuration and Functions
DTL and NTC Packages
8-pin SOP and 8-pin PDIP
Top View
VS
1
–In
2
8
Common
7
NC
(1)
(1)
–V
3
6
NC
1MW Feedback
4
5
Output
Photodiode location.
Pin Functions
PIN
NO.
NAME
I/O
DESCRIPTION
1
VS
Power
2
–In
Input
3
–V
Power
4
1MΩ Feedback
Input
5
Output
Output
6
NC
—
Do not connect
Do not connect
7
NC
—
8
Common
Input
Power supply of device. Apply 2.7 V to 36 V relative to –V pin.
Negative input of op amp and the cathode of the photodiode. Either do not connect, or apply
additional op amp feedback.
Most negative power supply. Connect to ground or a negative voltage that meets the recommended
operating conditions.
Connection to internal feedback network. Typically connect to Output, pin 5.
Output of device.
Anode of the photodiode. Typically, connect to ground.
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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
Supply voltage (VS to Common pin or –V pin)
MIN
MAX
UNIT
0
36
V
Output short-circuit (to ground)
Continuous
Operating
Temperature
–25
Junction
Storage, Tstg
(1)
–25
85
°C
85
°C
85
°C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001
Electrostatic discharge
(1)
±2000
Charged-device model (CDM), per JEDEC specification JESD22-C101 (2)
±500
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
POWER SUPPLY
Operating voltage
2.7
36
V
Specified
0
70
°C
Operating
0
70
°C
TEMPERATURE
6.4 Thermal Information
OPT101
THERMAL METRIC
(1)
DTL (SOP)
NTC (PDIP)
8 PINS
8 PINS
UNIT
138.6
128.2
°C/W
RθJA
Junction-to-ambient thermal resistance
RθJC(top)
Junction-to-case (top) thermal resistance
96.4
113.1
°C/W
RθJB
Junction-to-board thermal resistance
126.6
107.0
°C/W
ψJT
Junction-to-top characterization parameter
17.8
24.2
°C/W
ψJB
Junction-to-board characterization parameter
118.8
105.9
°C/W
(1)
4
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
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6.5 Electrical Characteristics
At TA = 25°C, VS = 2.7 V to 36 V, λ = 650 nm, internal 1-MΩ feedback resistor, and RL = 10 kΩ (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
RESPONSIVITY
Photodiode current
0.45
A/W
Voltage output
0.45
V/µW
Voltage output vs temperature
100
ppm/°C
Unit-to-unit variation
Nonlinearity (1)
Photodiode area
DARK ERRORS, RTO
±5%
Full-scale (FS) output = 24 V
±0.01
% of FS
0.090 in × 0.090 in
0.008
in2
2.29 mm × 2.29 mm
mm2
5.2
(2)
Offset voltage, output
5
Offset voltage vs temperature
7.5
10
±10
Offset voltage vs power supply
VS = 2.7 V to 36 V
Voltage noise, dark
fB = 0.1 Hz to 20 kHz, VS = 15 V,
VPIN3 = –15 V
10
mV
µV/°C
100
300
µV/V
µVrms
TRANSIMPEDANCE GAIN
Resistor
1
Tolerance
±0.5%
Tolerance vs temperature
MΩ
±2%
±50
ppm/°C
FREQUENCY RESPONSE
Bandwidth
VOUT = 10 VPP
14
kHz
Rise and fall time
10% to 90%, VOUT = 10-V step
28
µs
to 0.05%, VOUT = 10-V step
160
µs
to 0.1%, VOUT = 10-V step
80
µs
to 1%, VOUT = 10-V step
70
µs
100%, return to linear operation
50
µs
(VS) – 1.3 (VS) – 1.15
V
Settling time
Overload recovery
OUTPUT
Voltage output, high
Capacitive load, stable operation
Short-circuit current
10
nF
15
mA
Dark, VPIN3 = 0 V
120
µA
RL = ∞, VOUT = 10 V
220
µA
VS = 36 V
POWER SUPPLY
Quiescent current
(1)
(2)
Deviation in percent of full scale from best-fit straight line.
Referred to output. Includes all error sources.
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6.6 Electrical Characteristics: Photodiode
At TA = 25°C and VS = 2.7 V to 36 V (unless otherwise noted)
PARAMETER
Photodiode area
TEST CONDITIONS
MIN
0.090 in × 0.090 in
TYP
MAX
in2
0.008
2.29 mm × 2.29 mm
mm2
5.2
0.45
Current responsivity
λ = 650 nm
Dark current
VDIODE = 7.5 mV
Dark current vs temperature
VDIODE = 7.5 mV
A/W
(µA/W)/cm
865
2
2.5
pA
Doubles every 7°C
Capacitance
UNIT
—
1200
pF
6.7 Electrical Characteristics: Op Amp (1)
At TA = 25°C, VS = 2.7 V to 36 V, λ = 650 nm, internal 1-MΩ feedback resistor, and RL = 10 kΩ (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
INPUT
Offset voltage
±0.5
mV
vs temperature
±2.5
µV/°C
10
µV/V
165
pA
vs power supply
Input bias current
(–) input
vs temperature
(–) input
Input impedance
Common-mode input voltage range
Differential
Common-mode
Linear operation
Common-mode rejection
Doubles every 10°C
—
400 || 5
MΩ || pF
250 || 35
GΩ || pF
0 to (VS – 1)
V
90
dB
90
dB
2
MHz
1
V/µs
OPEN-LOOP GAIN
Open-loop voltage gain
FREQUENCY RESPONSE
Gain bandwidth product (2)
Slew rate
Settling time
0.05%
8.0
µs
0.1%
7.7
µs
1%
5.8
µs
OUTPUT
Voltage output, high
Short-circuit current
(VS) – 1.3 (VS) – 1.15
VS = 36 V
V
15
mA
Dark, VPIN3 = 0 V
120
µA
RL = ∞, VOUT = 10 V
220
µA
POWER SUPPLY
Quiescent current
(1)
(2)
6
Op amp specifications provided for information and comparison only.
Stable gains ≥ 10 V/V.
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6.8 Typical Characteristics
At TA = 25°C, VS = 2.7 V to 36 V, λ = 650 nm, internal 1-MΩ feedback resistor, and RL = 10 kΩ (unless otherwise noted)
10
Red
Blue
Ultraviolet
0.9
Green
Yellow
Infrared
70°C
0.8
25°C
0.7
0.6
650 nm
(0.45 A/W)
0.5
0.4
0.3
Ω
1
Output Voltage (V)
Normalized Current or Voltage Output
1.0
RF
=
0.1
10
M
Ω
RF
=
1
M
RF
=
10
0
kΩ
0.01
RF
0.2
=
50
kΩ
l = 650 nm
0.1
0.001
0
200
300
400
500 600 700 800
Wavelength (nm)
900
1000 1100
0.01
0.1
1
10
100
1k
Radiant Power (µW)
Figure 1. Normalized Spectral Responsivity
Figure 2. Voltage Responsivity vs Radiant Power
10
10
Ω
1
RF
=
10
M
0.1
RF
=
1
Ω
M
RF
0.01
=
10
0
kΩ
RF
=
50
kΩ
0.01
0.1
RF = 1 MΩ
0.1
1
10
100
RF = 100 kΩ, CEXT = 33 pF
RF = 50 kΩ, CEXT = 56 pF
0.01
l = 650 nm
0.001
0.001
1
Responsivity (V/µW)
Output Voltage (V)
RF = 10 MΩ
0.001
100
1k
2
Irradiance (W/m )
10k
100k
Frequency (Hz)
Figure 4. Voltage Responsivity vs Frequency
Figure 3. Voltage Responsivity vs Irradiance
1.0
8
qX
7.8
qY
Output Voltage (mV)
Relative Response
0.8
0.6
0.4
qX
Plastic
DIP Package
qY
7.6
7.4
7.2
0.2
7
0
0
20
40
60
80
Incident Angle (°)
0
10
20
30
40
Temperature (°C)
50
60
Figure 5. Response vs Incident Angle
Figure 6. Dark VOUT vs Temperature
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Typical Characteristics (continued)
At TA = 25°C, VS = 2.7 V to 36 V, λ = 650 nm, internal 1-MΩ feedback resistor, and RL = 10 kΩ (unless otherwise noted)
300
300
Quiescent Current (µA)
Quiescent Current (µA)
250
VS = 15 V, VOUT – VPIN3 = 15 V
250
225
200
VS = 5 V, VOUT – VPIN3 = 5 V
175
150
VS = +15 V, VOUT – VPIN3 = 0 V
125
100
200
VS = 2.7 V
150
100
50
75
VS = +5 V, VOUT – VPIN3 = 0 V
0
50
0
10
20
30
40
Temperature (°C)
50
60
70
0
Figure 7. Quiescent Current vs Temperature
5
10
15
20
25
VOUT – VPIN3 (V)
30
35
40
Figure 8. Quiescent Current vs (VOUT – VPIN3)
20
180
18
160
16
140
14
120
IBIAS – IDARK (pA)
Short-Circuit Current (mA)
VS = 15 V
VS = 36 V
275
12
10
8
6
IFEEDBACK
(IBIAS – IDARK)
100
3 pF
1 MΩ
8 pF
80
IBIAS
60
l
40
IDARK
20
4
0
2
–20
VB
OPT101
–40
0
0
5
10
15
20
VS (V)
25
30
35
40
0
Figure 9. Short-Circuit Current vs VS
10
20
30
40
Temperature (°C)
50
60
70
Figure 10. (IBIAS – IDARK) vs Temperature
1000
10
–7
100
RF = 1 MΩINTERNAL
Noise Effective Power (W)
Noise Voltage (µVrms)
RF = 10 MΩ
RF = 100 kΩ || 33 pF
10
RF = 50 kΩ || 56 pF
1
10
10
10
10
RF = 100 kΩ || 33 pF
–8
RF = 50 kΩ || 56 pF
–9
–10
RF = 1 MΩ INTERNAL
–11
RF = 10 MΩ
0.1
10
100
1k
10k
Frequency (Hz)
100k
1M
10
–12
10
VS = 15 V, VOUT – VPIN3 = 15 V
1k
10k
Bandwidth (Hz)
100k
1M
VS = 15 V, VOUT – VPIN3 = 15 V
Figure 11. Output Noise Voltage vs Measurement Bandwidth
8
100
Figure 12. Noise Effective Power vs Measurement
Bandwidth
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Typical Characteristics (continued)
At TA = 25°C, VS = 2.7 V to 36 V, λ = 650 nm, internal 1-MΩ feedback resistor, and RL = 10 kΩ (unless otherwise noted)
Figure 13. Small-Signal Response
CLOAD = 10,000 pF, pin 3 = 0 V
Figure 14. Large-Signal Response
CLOAD = 10,000 pF, Pin 3 = –15 V
Figure 15. Small-Signal Response
Figure 16. Small-Signal Response
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7 Parameter Measurement Information
7.1 Light Source Positioning and Uniformity
The OPT101 is tested with a light source that uniformly illuminates the full area of the integrated circuit, including
the op amp. Although the silicon of integrated circuit (IC) amplifiers is light-sensitive to some degree, the OPT101
op amp circuitry is designed to minimize this effect. Sensitive junctions are shielded with metal, and the
photodiode area is very large relative to the op amp input circuitry.
If the light source is focused to a small area, be sure that it is properly aimed to fall on the photodiode. A
narrowly-focused beam falling only on the photodiode provides improved settling times compared to a source
that uniformly illuminates the full area of the die. If a narrowly-focused light source misses the photodiode area
and falls only on the op amp circuitry, the OPT101 does not perform properly. The large 0.09-in × 0.09-in (2.29
mm × 2.29 mm) photodiode area allows easy positioning of narrowly-focused light sources. The photodiode area
is easily visible because the area appears very dark compared to the surrounding active circuitry.
The incident angle of the light source also effects the apparent sensitivity in uniform irradiance. For small incident
angles, the loss in sensitivity is simply due to the smaller effective light gathering area of the photodiode
(proportional to the cosine of the angle). At a greater incident angle, light is diffracted and scattered by the
package. These effects are shown in Figure 5.
10
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8 Detailed Description
8.1 Overview
The OPT101 is a large-area photodiode integrated with an optimized operational amplifier that makes the
OPT101 a small, easy-to-use, light-to-voltage device. The photodiode has a very large measurement area that
collects a significant amount of light, and thus allows for high-sensitivity measurements. The photodiode has a
wide spectral response with a maximum peak in the infrared spectrum, and a useable range from 300 nm to
1100 nm. The wide power-supply range of 2.7 V to 36 V makes this device useful in a variety of architectures;
from all-analog circuits to data conversion base circuits. The on-chip voltage source keeps the amplifier in a good
operating region, even at low light levels.
The OPT101 voltage output is the product of the photodiode current times the feedback resistor, (IDRF), plus a
pedestal voltage, VB, of approximately 7.5 mV introduced for single-supply operation. Output is 7.5 mV dc with
no light, and increases with increasing illumination. Photodiode current, ID, is proportional to the radiant power, or
flux, (in watts) falling on the photodiode. At a wavelength of 650 nm (visible red) the photodiode responsivity, RI,
is approximately 0.45 A/W. Responsivity at other wavelengths is shown in Figure 1. The internal feedback
resistor is laser trimmed to 1 MΩ. Using this resistor, the output voltage responsivity, RV, is approximately 0.45
V/μW at 650-nm wavelength.
See Figure 2 for the response throughout a wide range of radiant power in microwatts. Figure 3 shows the
response throughout a wide range of irradiance in watts per square meter.
8.2 Functional Block Diagram
V+
2
1
3 pF
1 MW
4
8 pF
5
7.5 mV
l
VB
OPT101
8
3
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8.3 Feature Description
8.3.1 Dark Performance
The dark errors in the Electrical Characteristics table include all sources. The dominant source of dark output
voltage is the pedestal voltage applied to the noninverting input of the op amp. This voltage is introduced to
provide linear operation in the absence of light falling on the photodiode. Photodiode dark current is
approximately 2.5 pA, and contributes virtually no offset error at room temperature. The bias current of the op
amp summing junction (negative input) is approximately 165 pA. The dark current is subtracted from the amplifier
bias current, and this residual current flows through the feedback resistor creating an offset. The effects of
temperature on this difference current are seen in Figure 10. The dark output voltage is trimmed to zero with the
optional circuit shown in Figure 17. Use a low-impedance offset driver (op amp) to drive pin 8 (Common)
because this node has signal-dependent currents.
VS
2
1
3 pF
4
1 MW
8 pF
5
l
VB
OPT101
8
Common
VO
Adjust R1
for VO = 0 V
with no light.
3
–V
+15 V
OPA177
R1
500 kW
1/2 REF200
100 μA
–15 V
–15 V
Figure 17. Dark Error (Offset) Adjustment Circuit
12
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Feature Description (continued)
8.3.2 Feedback Network and Dynamic Response
The OPT101 features a feedback network for optimal dynamic response. The dynamic response of the OPT101
is dominated by the feedback network and op amp combination. Using the internal 1-MΩ resistor, the dynamic
response of the photodiode and op amp combination can be modeled as a simple RC circuit with a –3-dB cutoff
frequency of approximately 14 kHz. The R and C values are 1 MΩ and 11 pF, respectively. To improve the
frequency response, use external resistors with less than 3-pF parasitic capacitance. An external 1-MΩ resistor
used in the configuration shown in Figure 19 creates a 23-kHz bandwidth with the same 106 V/A dc
transimpedance gain. This increased bandwidth yields a rise time of approximately 15 μs (10% to 90%). Dynamic
response is not limited by op amp slew rate, as demonstrated in Figure 13 and Figure 14, showing virtually
identical large-signal and small-signal response.
Dynamic response varies with feedback network value, as shown in Figure 4. Rise time (10% to 90%) varies as
a function of the –3-dB bandwidth produced by the feedback network value shown in Equation 1:
tr = 0.35 / fC
where
•
•
tr is the rise time (10% to 90%)
fC is the –3dB bandwidth
(1)
8.3.2.1 Changing Responsivity
To set a different voltage responsivity, connect an external resistor, REXT. To increase the responsivity, place this
resistor in series with the internal 1-MΩ resistor (Figure 18), or replace the internal resistor with an external
resistor by not connecting pin 4 (Figure 19). The second configuration also reduces the circuit gain below 106
V/A when using external resistors that are less than 1 MΩ.
VS
2
1
3 pF
4
1 MW
8 pF
REXT
CEXT
5
l
VB
OPT101
8
3
Figure 18. Changing Responsivity with External Resistor in Series with Internal Resistor
Table 1. Responsivity and Bandwidth for Figure 18
REXT
(MΩ)
CEXT
(pF)
DC Gain
(× 106V/A)
Bandwidth
(kHz)
1
50
2
8
2
25
3
6
5
10
6
2.5
10
5
11
1.3
50
—
51
0.33
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CEXT
REXT
VS
2
1
3 pF
4
1 MW
8 pF
5
l
VB
OPT101
8
3
Figure 19. Changing Responsivity with External Resistor Only (Internal Resistor Disabled)
Table 2. Responsivity and Bandwidth for Figure 19
(1)
REXT
(MΩ)
CEXT
(pF)
DC Gain
(× 106V/A)
Bandwidth
(kHz)
0.05 (1)
56
0.05
58
0.1 (1)
33
0.1
44
1
—
1
23
2
—
2
9.4
5
—
5
3.6
10
—
10
1.8
50
—
50
0.34
May require 1 kΩ in series with pin 5 when driving large capacitances.
Applications using a feedback resistor significantly larger than the internal 1-MΩ resistor require special
consideration. Input bias current of the op amp and dark current of the photodiode increase significantly at higher
temperatures. This increase combined with the higher gain (RF > 1 MΩ) can cause the op amp output to be
driven to ground at high temperatures. If this problem occurs, use a positive bias voltage applied to pin 8 to make
sure that the op amp output remains in the linear operating region when the photodiode is not exposed to light.
Alternatively, use a dual power supply. The output may be negative when sensing dark conditions. Use the
information discussed in the Dark Performance section and Figure 10 to analyze the desired configuration.
8.3.3 Noise Performance
Noise performance of the OPT101 is determined by the op amp characteristics, feedback network, photodiode
capacitance, and signal level. Figure 11 shows how the noise varies with RF and measured bandwidth (0.1 Hz to
the indicated frequency), when the output voltage minus the voltage on pin 3 (–V) is greater than approximately
50 mV. Below this level, the output stage is powered down, and the effective bandwidth is decreased. This
decreased bandwidth reduces the noise to approximately 1/3 the nominal noise value of 300 μVrms, or 100
μVrms. This decreased bandwidth enables a low-level signal to be resolved.
To reduce noise and improve the signal-to-noise ratio, filter the output with a cutoff frequency equal to the signal
bandwidth. In addition, output noise increases in proportion to the square root of the feedback resistance, while
responsivity increases linearly with feedback resistance. To improve the signal-to-noise ratio performance, use
large feedback resistance, if decreased bandwidth is acceptable to the application.
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The noise performance of the photodetector is sometimes characterized by noise effective power (NEP), the
radiant power that produces an output signal equal to the noise level. NEP has the units of radiant power (watts),
or W/√Hz to convey spectral information about the noise. Figure 12 illustrates the NEP for the OPT101.
8.3.4 Linearity Performance
The photodiode is operated in the photoconductive mode so the current output of the photodiode is very linear
with radiant power throughout a wide range. Nonlinearity remains less than approximately 0.05% for photodiode
currents less than 100-μA. The photodiode is able to produce output currents of 1 mA or greater with high radiant
power, but nonlinearity increases to several percent in this region.
This very linear performance at high radiant power assumes that the full photodiode area is uniformly illuminated.
If the light source is focused to a small area of the photodiode, nonlinearity occurs at lower radiant power.
8.3.5 Capacitive Load Drive
The OPT101 is capable of driving load capacitances of 10 nF without instability. However, dynamic performance
with capacitive loads may improve by applying a negative bias voltage to pin 3 (–V, shown in Figure 20). This
negative power-supply voltage allows the output to go negative in response to the reactive effect of a capacitive
load. An internal JFET connected between pin 5 (output) and pin 3 (–V) allows the output to sink current. This
current sink capability is also useful when driving the capacitive inputs of some analog-to-digital converters that
require the signal source to sink currents up to approximately 100 μA. The benefits of this current sink are shown
in Figure 15 and Figure 16. These figures compare operation with pin 3 (–V) grounded and connected to –15 V.
0.01 μF
to 0.1 μF
VS
2
1
3 pF
4
1 MW
8 pF
5
l
VB
OPT101
8
3
0.01 μF to 0.1 μF
Common
–V = –1 V to (VS – 36 V)
Figure 20. Bipolar Power-Supply Circuit Connections
Because of the architecture of this output stage current sink, there is a slight increase in operating current when
there is a voltage between pin 3 (–V) and the output. Depending on the magnitude of this voltage, the quiescent
current increases by approximately 100 μA, as shown in Figure 8.
8.4 Device Functional Modes
The OPT101 has a single functional mode and is operational when the power-supply voltage is greater than 2.7
V. The maximum power supply voltage for the OPT101 is 36 V.
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9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
Figure 21 shows the basic circuit connections for the OPT101 operating with a single power supply and using the
internal 1-MΩ feedback resistor for a response of 0.45 V/μW at 650 nm. Pin 3 (–V) is connected to common in
this configuration. Applications with high-impedance power supplies may require decoupling capacitors located
close to the device pins as shown.
VS = +2.7 V to +36 V
0.01 μF to 0.1 μF
2
1
3 pF
4
1 MW
8 pF
5
l
VB
OPT101
8
Dark output » 7.5 mV
Positive going output
with increased light.
3
Common
Figure 21. Basic Circuit Connections
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9.2 Typical Applications
9.2.1 Color and Reflective Wavelength Tester
A common application for the OPT101 is testing physical materials. Information can be gained about a test
material by determining the optical reflection, transmission, or absorption properties at particular wavelengths.
These test materials can be solid objects, biological or chemical liquids, or any other type of material.
For an intuitive example, this application for OPT101 tests red, green, and blue reflective color properties of a
variety of test materials. This application is not intended to match the color standards as defined by the
Commission Internationale de l'Eclairage (CIE), but to illustrate a generic optical wavelength-specific test
technique. Different applications can test for different wavelengths, including invisible ultraviolet or infrared
wavelengths, that are appropriate for the objective of that application.
Enclosure
Test Material
Volt
Meter
Matte Black Foil
RGB
LED
Chamber Wall
Chamber Wall
Chamber
OPT101
5-V
Power
Supply
Output
Baffle
Common (Ground)
VS
6
Triple
LED
Driver
Figure 22. Fixture for Measurement of Optical Reflective Properties of a Test Material
9.2.1.1 Design Requirements
For this design example, use the parameters listed in Table 3 as the input design requirement parameters.
Table 3. Design Parameters
DESIGN PARAMETER
VALUE
Input power supply voltage
5V
Room ambient light condition
< 2000 lux
Ratio of blue and green response to red response, for red target
< 60%
Ratio of red and green response to blue response, for blue target
< 60%
Ratio of red and blue response to green response, for green target
< 80%
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9.2.1.2 Detailed Design Procedure
This design illuminates a test material with specific wavelengths, and measures the resulting reflection. Choose
an RGB LED that sequentially creates individual red, green, and blue wavelengths. Red material has a strong
reflection of red wavelengths, and a weaker reflection of green and blue wavelengths. Green and blue materials
follow a similar pattern, reflecting the respective primary color wavelengths stronger than other color
wavelengths.
Design a fixture with a chamber that allows the RGB LED to illuminate the test material and allows the OPT101
to receive the resulting reflection, as shown in Figure 22. Design the chamber to keep out ambient light from the
room. Line the chamber with a matte black foil so that the chamber walls absorb as much light as possible. The
matte black foil helps the OPT101 sensor measure reflections primarily from the test material and only minimally
from the chamber walls. Design a baffle structure between the RGB LED and the OPT101 sensor so that light
does not transmit directly from the RGB LED to the OPT101 sensor without reflecting off of the test material.
Place an additional enclosure over the chamber to enhance the isolation from any light in the room.
Drive the OPT101 power supply pin, VS, with a 5-V power supply, and measure the output pin voltage with a
voltmeter. This voltmeter can easily be replaced with an ADC.
Choose LED drive currents for each of the RGB LEDs. Throughout this procedure, either drive each LED with
this specific chosen current, or do not drive the LED at all. Choose an LED drive current that equalizes the power
dissipation (the drive current times the forward-biased voltage drop across each LED). This equal power
dissipation minimizes thermal transient settling time when switching between the LEDs. This equal power
dissipation is not a requirement if test speed and settling time are not an issue for the application.
Calibrate the fixture by measuring a standard white card as a test material. Drive the red LED, and record the
resulting voltage from the OPT101. Repeat this procedure with the green and blue LEDs.
Next, measure a test material with the same procedure used for the white card. Normalize the results by dividing
the test material result by the white card result for each LED. Determine the color of the object by selecting the
largest of the three LED normalized measurements. Perform an additional normalization step for data clarity by
dividing each of the three LED measurements by the largest of the three measurements.
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9.2.1.3 Application Curves
The following figures show that the colors of the test materials sorted properly, as expected. The red test
materials all showed a stronger reflection for red LED than the green and blue LEDs. The results are plotted in
four groups: red (Figure 23, blue (Figure 24), green (Figure 25), and neutral color (Figure 26). The application
clearly identifies the primary color of each test material. When the color is neutral, then the red, green, and blue
test results are very similar to each other, as expected (within 10% of each other).
The red results had the most contrast. The green results had the least contrast. These results are likely different
because the red LED has the least spectral overlap with the green and blue LEDs. The green LED has the
widest spectral content. If more contrast is required, try LEDs (or other light sources) with more-narrow
spectrums.
1.2
1.2
Blue
Green
Blue
Red
Normalized Reflection
Normalized Reflection
Red
1
1
0.8
0.6
0.4
0.8
0.6
0.4
0.2
0.2
0
0
Red
TI
Shirt
Red
T-Shirt
Red
Polo
Shirt
Red
Cardboard
Box
Blue
Shirt
Red
Red
Red
Plastic
Toy Tomato
Box
Plastic
Blocks
Test Material
Blue
Blue
Toy
Plastic
Base- Plastic
plate Blocks
Blue
Foil
Blue
File
Folder
Blue
Bed
Sheet
Blue
Plastic
Box
Test Material
D001
Figure 23. Normalized Reflections for Red Materials
D002
Figure 24. Normalized Reflections for Blue Materials
1.2
1.2
Blue
Red
Green
Blue
1
Red
Green
1
Normalized Reflection
Normalized Reflection
Green
0.8
0.6
0.4
0.2
0.8
0.6
0.4
0.2
0
0
Green
Paper
Green
Plastic
Baseplate
Green
Shirt
Green
PCB
Test Material
Green
Snap
Peas
18%
Gray
Card
Black
Felt
Test Material
D003
Figure 25. Normalized Reflections for Green Materials
Black
Foil
D004
Figure 26. Normalized Reflections for Neutral Materials
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9.2.2 Three-Wire Remote Light Measurement
Use the connections to the OPT101 shown on the right side of Figure 27 to sense a remote location with a threewire light measurement circuit.
2
1
0.01 μF to
0.1 μF
3 pF
4
1 MW
+2.7 V to
+36 V
8 pF
5
l
VOUT
VB
OPT101
8
3
Figure 27. Three-Wire Remote Light Measurement
9.2.3 Differential Light Measurement
Use a configuration similar to Figure 28 for applications that sense light gradients or differential light.
+15 V
1
2
3 pF
4
1 MW
8 pF
+15 V
V01
2
1
5
l
8
6
RG
VB
5
3
50 kW
RG
4
–15 V
+15 V
1
2
VOUT = (V02 – V01) 1+
INA118
8
OPT101
3
Difference Output
7
3 pF
+15 V
Log of Ratio Measurement
(Absorbance)
4
1 MW
6
8 pF
100 kW
5
V02
l
14
100 kW
LOG100
9
VB
7
VOUT = K log10 (V02 / V01)
1
1 nF
3
OPT101
8
3
–15 V
Figure 28. Differential Light Measurement
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9.2.4 LED Output Regulation Circuit
To keep an LED (or other light) producing a constant amount of light over changing temperature and over the
lifetime efficiency degradation of the LED, use a circuit similar to Figure 29. As the efficiency of the LED
degrades, this circuit increases the LED drive current to keep the output at the appropriate constant level.
+15 V
2
1
3 pF
3.3 nF
1 MW
10 kW
2
2
REF102
8 pF
+15 V
+15 V
10 V
7
OPA627
100 kW
4
6
270 W
5
LED
3
6
4
VB
IN4148
4
–15 V
11 kW
OPT101
0.03 μF
8
3
Glass Microscope Slide
Approximately
92% light
available for application.
LED
» 8%
OPT101
Figure 29. LED Output Regulation Circuit
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9.3 Dos and Don'ts
As with any optical product, special care must be taken into consideration when handling the OPT101. Although
the OPT101 has low sensitivity to dust and scratches, proper optical device handling procedures are still
recommended.
The optical surface of the device must be kept clean for optimal performance in both prototyping with the device
and mass production manufacturing procedures. Tweezers with plastic or rubber contact surfaces are
recommended to avoid scratches on the optical surface. Avoid manipulation with metal tools when possible. The
optical surface must be kept clean of fingerprints, dust, and other optical-inhibiting contaminants.
If the device optical surface requires cleaning, use deionized water or isopropyl alcohol. A few gentile brushes
with a soft swab are appropriate. Avoid potentially abrasive cleaning and manipulating tools and excessive force
that can scratch the optical surface.
If the OPT101 performs less than optimally, inspect the optical surface for dirt, scratches, or other optical
artifacts.
Any light falling on the op amp circuitry area must be uniform; see the Parameter Measurement Information
section for more information about light uniformity.
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10 Power-Supply Recommendations
The OPT101 is designed to operate from an input voltage supply range between 2.7 V and 36 V. Make sure the
power-supply input is well regulated. Place a 0.01-µF to 0.1-µF bypass capacitor with low-impedance, short
connections between VS (pin 1) and –V (pin 3). If –V (pin 3) is not connected to Common (pin 8), place an
additional bypass capacitor between VS (pin 1) and Common (pin 8).
11 Layout
11.1 Layout Guidelines
Make all power connections with short, low impedance connections.
Depending on the application, the design might benefit from having the OPT101 mounted to the opposite side of
the board as the other electrical components. Keeping the optical sensor side free from extra components allows
for easier mounting of any required optical-mechanical structures around the OPT101.
11.2 Layout Example
The following example shows an external feedback network (R2 and C2) that bypasses the internal feedback
network, similar to Figure 19. This example also shows an external feedback network (R1, C1) in series with the
internal feedback network, similar to Figure 18. To use only the internal feedback network, load R1 or C1 with a
short circuit. This example allows for three different configurations with the same layout. Do not load R1, C1, R2,
and C2 simultaneously.
Figure 30. Layout Example
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12 Device and Documentation Support
12.1 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
12.2 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
12.3 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
12.4 Moisture Sensitivity and Soldering
Clear plastic does not contain the structural-enhancing fillers used in black plastic molding compound. As a
result, clear plastic is more sensitive to environmental stress than black plastic. This can cause difficulties if
devices have been stored in high humidity prior to soldering. The rapid heating during soldering can stress wire
bonds and cause failures. Prior to soldering, it is recommended that plastic devices be baked-out at 85°C for 24
hours.
The fire-retardant fillers used in black plastic are not compatible with clear molding compound. The OPT101
plastic packages cannot meet flammability test, UL-94.
12.5 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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13-Aug-2021
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
OPT101P
ACTIVE
PDIP
NTC
8
50
RoHS & Green
NIPDAU
N / A for Pkg Type
0 to 70
OPT101
OPT101P-J
ACTIVE
SOP
DTL
8
50
RoHS & Green
NIPDAU
Level-4-250C-72 HR
0 to 70
OPT101
OPT101P-JG4
ACTIVE
SOP
DTL
8
50
RoHS & Green
NIPDAU
Level-4-250C-72 HR
0 to 70
OPT101
OPT101PG4
ACTIVE
PDIP
NTC
8
50
RoHS & Green
NIPDAU
N / A for Pkg Type
0 to 70
OPT101
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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