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RC4558
SLOS073G – MARCH 1976 – REVISED OCTOBER 2014
RC4558 Dual General-Purpose Operational Amplifier
1 Features
3 Description
•
•
The RC4558 device is a dual general-purpose
operational amplifier, with each half electrically similar
to the μA741, except that offset null capability is not
provided.
1
•
•
•
•
•
•
Continuous Short-Circuit Protection
Wide Common-Mode and Differential Voltage
Ranges
No Frequency Compensation Required
Low Power Consumption
No Latch-Up
Unity-Gain Bandwidth: 3 MHz Typ
Gain and Phase Match Between Amplifiers
Low Noise: 8 nV/√Hz Typ at 1 kHz
The high common-mode input voltage range and the
absence of latch-up make this amplifier ideal for
voltage-follower applications. The device is shortcircuit protected, and the internal frequency
compensation ensures stability without external
components.
Device Information(1)
2 Applications
•
•
PART NUMBER
DVD Recorders and Players
Pro Audio Mixers
RC4558
PACKAGE (PIN)
BODY SIZE
SOIC (8)
4.90 mm × 3.91 mm
SOIC (8)
3.00 mm × 3.00 mm
PDIP (8)
9.81 mm × 6.35 mm
TSSOP (8)
3.00 mm × 4.40 mm
SOP (8)
6.20 mm × 5.30 mm
(1) For all available packages, see the orderable addendum at
the end of the datasheet.
Noninverting Amplifier Schematic
VIN
RIN
RG
+
VOUT
RF
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
RC4558
SLOS073G – MARCH 1976 – REVISED OCTOBER 2014
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Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
6.1
6.2
6.3
6.4
6.5
6.6
6.7
4
4
4
4
5
5
6
Absolute Maximum Ratings .....................................
Handling Ratings.......................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Operating Characteristics..........................................
Typical Characteristics ..............................................
Detailed Description .............................................. 9
7.1 Overview ................................................................... 9
7.2 Functional Block Diagram ......................................... 9
7.3 Feature Description................................................... 9
7.4 Device Functional Modes.......................................... 9
8
Application and Implementation ........................ 10
8.1 Typical Application ................................................. 10
9 Power Supply Recommendations...................... 13
10 Layout................................................................... 14
10.1 Layout Guidelines ................................................. 14
10.2 Layout Example .................................................... 14
11 Device and Documentation Support ................. 15
11.1 Trademarks ........................................................... 15
11.2 Electrostatic Discharge Caution ............................ 15
11.3 Glossary ................................................................ 15
12 Mechanical, Packaging, and Orderable
Information ........................................................... 15
4 Revision History
Changes from Revision F (September 2010) to Revision G
Page
•
Added Applications, Device Information table, Handling Ratings table, Feature Description section, Device
Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout
section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section. ..... 1
•
Removed Ordering Information table. .................................................................................................................................... 1
2
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5 Pin Configuration and Functions
D, DGK, P, PS, OR PW PACKAGE
(TOP VIEW)
1OUT
1IN−
1IN+
VCC−
1
8
2
7
3
6
4
5
VCC+
2OUT
2IN−
2IN+
Pin Functions
PIN
NAME
NO.
TYPE
DESCRIPTION
1IN+
3
I
Noninverting input
1IN-
2
I
Inverting Input
1OUT
1
O
Output
2IN+
5
I
Noninverting input
2IN-
6
I
Inverting Input
2OUT
7
O
Output
VCC+
8
—
Positive Supply
VCC-
4
—
Negative Supply
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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
MIN
VCC+
VCC–
MAX
18
Supply voltage (2)
–18
UNIT
V
VID
Differential input voltage (3)
±30
V
VI
Input voltage (any input) (2) (4)
±15
V
Duration of output short circuit to ground, one amplifier at a time
TJ
(1)
(2)
(3)
(4)
(5)
(5)
Unlimited
Operating virtual junction temperature
150
°C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltage values, unless otherwise noted, are with respect to the midpoint between VCC+ and VCC–.
Differential voltages are at IN+ with respect to IN–.
The magnitude of the input voltage must never exceed the magnitude of the supply voltage or 15 V, whichever is less.
Temperature and/or supply voltages must be limited to ensure that the dissipation rating is not exceeded.
6.2 Handling Ratings
Tstg
Storage temperature range
V(ESD)
(1)
(2)
Electrostatic discharge
MIN
MAX
UNIT
-65
150
°C
0
500
0
1000
Human body model (HBM), per AEC Q100-002 (1)
Charged device model (CDM), per AEC Q100-011
(2)
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
VCC+
VCC–
TA
MIN
MAX
5
15
–5
–15
RC4558
0
70
RC4558I
–40
85
Supply voltage
Operating free-air temperature
UNIT
V
°C
6.4 Thermal Information
RC4558
THERMAL METRIC (1)
D
DGK
Junction-to-ambient thermal resistance
97
172
P
PS
PW
UNIT
95
149
°C/W
8 PINS
RθJA
(1)
4
85
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
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6.5 Electrical Characteristics
at specified free-air temperature, VCC+ = 15 V, VCC– = –15 V
TEST
CONDITIONS (1)
PARAMETER
VIO
Input offset voltage
VO = 0
IIO
Input offset current
VO = 0
IIB
Input bias current
VO = 0
VICR
Common-mode input voltage range
Maximum output voltage swing
(2)
25°C
±12
±14
±12
±14
±13
25°C
±10
Full range
±10
25°C
20
Full range
15
25°C
ri
Input resistance
25°C
CMRR
Common-mode rejection ratio
25°C
Equivalent input noise voltage (closed loop)
AVD = 100,
RS = 100 Ω,
f = 1 kHz,
BW = 1 Hz
ICC
Supply current (both amplifiers)
VO = 0,
No load
PD
VO1/VO2
(1)
(2)
VO = 0,
No load
Total power dissipation (both amplifiers)
Open loop
Crosstalk attenuation
AVD = 100
RS = 1 kΩ,
f = 10 kHz
6
mV
200
nA
500
nA
800
25°C
Unity-gain bandwidth
Vn
150
25°C
B1
UNIT
300
25°C
RL ≥ 2 kΩ,
VO = ±10 V
Supply-voltage sensitivity (ΔVIO/ΔVCC)
5
Full range
Large-signal differential voltage amplification
MAX
7.5
Full range
AVD
kSVS
TYP
0.5
25°C
RL = 2 kΩ
VCC = ±15 V
to ±9 V
MIN
Full range
RL = 10 kΩ
VOM
TA
V
V
300
V/mV
3
MHz
0.3
5
MΩ
70
90
dB
25°C
30
25°C
8
25°C
μV/V
150
nV/√Hz
2.5
5.6
TA min
3
6.6
TA max
2.3
5
25°C
75
170
TA min
90
200
TA max
70
150
85
25°C
mA
mW
dB
105
All characteristics are measured under open-loop conditions with zero common-mode input voltage, unless otherwise specified.
Full range is 0°C to 70°C for RC4558 and –40°C to 85°C for RC4558I.
6.6 Operating Characteristics
VCC+ = 15 V, VCC– = –15 V, TA = 25°C
PARAMETER
tr
SR
TEST CONDITIONS
MIN
Rise time
VI = 20 mV,
RL = 2 kΩ,
CL = 100 pF
Overshoot
VI = 20 mV,
RL = 2 kΩ,
CL = 100 pF
Slew rate at unity gain
VI = 10 V,
RL = 2 kΩ,
CL = 100 pF
TYP
MAX
0.13
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ns
5%
1.1
1.7
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UNIT
V/μs
5
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6
6
5
5
ICC – Supply Current – mA
4
3
2
1
4
3
2
1
0
0
2
4
6
8
10
12
14
16
18
0
-55
20
VCC – Supply Voltage – V
-35
-15
5
25
45
65
Figure 1. Supply Current vs Supply Voltage
(TA = 25°C)
40
40
30
-20
-60
10
-100
-120
Phase
-60
Gain
10
0
-140
-160
-10
-40
20
Gain – dB
-80
Gain
Phase – deg
20
Gain – dB
30
-40
Phase
-160
-180
-200
10000
-20
100
10
25
VOM – Output Voltage Swing – V
VOM – Output Voltage Swing – V
30
5
0
-5
-10
-15
12
14
16
20
15
10
5
0
1.E+00
1.E+01
1.E+02
1.E+03
1.E+04
1.E+05
10
100
10k
100k 1.E+06
1
1k
1M
18
VCC – Supply Voltage – V
f – Frequency – Hz
Figure 5. Output Voltage Swing vs Supply Voltage
(RL = 2 kΩ, TA = 25°C)
6
-200
10000
Figure 4. Gain and Phase vs Frequency
(VCC = ±15 V, RL = 10 kΩ, CL = 22 pF)
15
10
1000
f – Frequency – kHz
Figure 3. Gain and Phase vs Frequency
(VCC = ±15 V, RL = 2 kΩ, CL = 22 pF)
8
-120
-140
-10
f – Frequency – kHz
6
-80
-100
-180
1000
125
0
-20
-20
100
105
Figure 2. Supply Current vs Temperature
(VCC = ±15 V)
0
0
85
TA – Temperature – °C
Phase – deg
ICC – Supply Current – mA
6.7 Typical Characteristics
Figure 6. Output Voltage Swing vs Frequency
(VCC = ±15 V, RL = 2 kΩ, TA = 25°C)
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Typical Characteristics (continued)
15
32
14.75
28
VOM – Output Voltage Swing – V
VOM – Output Voltage Swing – V
30
26
24
22
20
18
16
14.5
14.25
14
13.75
13.5
13.25
14
12
100
1000
13
-55
10000
-35
-15
5
25
45
65
85
105 125
TA – Temperature – °C
RloadR– –Load
LoadResistance
Resistance–– W
L
Figure 7. Output Voltage Swing vs Load Resistance
(VCC = ±15 V, TA = 25°C)
Figure 8. Output Voltage Swing vs Temperature
(VCC = ±15 V, RL = 10 kΩ)
120
-12
110
100
-12.5
G M – Open Loop Gain – dB
–V OM – Output Voltage Swing – V
-12.25
-12.75
-13
-13.25
-13.5
90
80
70
60
50
40
30
20
-13.75
10
-14
-55
-35 -15
5
25
45
65
85
0
100
1.E+02
105 125
1k
1.E+03
TA – Temperature – °C
10k
1.E+04
100k
1.E+05
1M
1.E+06
10M
1.E+07
f – Frequency – Hz
Figure 9. Negative Output Voltage Swing vs Temperature
(VCC = ±15 V, RL = 10 kΩ)
Figure 10. Open Loop Gain vs Frequency
(VCC = ±15 V, RL = 2 kΩ, CL = 22 pF, TA = 25°C)
200
0.003
190
0.002
VIO – Input Offset Voltage – V
IIB – Input Bias Current – nA
180
170
160
150
140
130
120
0.001
0
-0.001
-0.002
110
100
-55
-35
-15
5
25
45
65
85
-0.003
-55
105 125
-35 -15
5
25
45
65
85
105 125
TA – Temperature – °C
TA – Temperature – °C
Figure 11. Input Bias Current vs Temperature
(VCC = ±15 V)
Figure 12. Input Offset Voltage vs Temperature
(VCC = ±15 V)
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Typical Characteristics (continued)
– Input
NoiseVoltage
Voltage––nV/rt(Hz)
nV/ÖHz
Vn V–n Input
Noise
14
12
10
8
6
4
2
0
10
1.E+01
100
1.E+02
1k
1.E+03
10k
1.E+04
100k
1.E+05
f – Frequency – Hz
Figure 13. Input Noise Voltage vs Frequency
(VCC = ±15 V, TA = 25°C)
8
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7 Detailed Description
7.1 Overview
The RC4558 device is a dual general-purpose operational amplifier, with each half electrically similar to the
μA741, except that offset null capability is not provided.
The high common-mode input voltage range and the absence of latch-up make this amplifier ideal for voltagefollower applications. The device is short-circuit protected, and the internal frequency compensation ensures
stability without external components.
7.2 Functional Block Diagram
VCC+
IN−
IN+
OUT
VCC−
7.3 Feature Description
7.3.1 Unity-Gain Bandwidth
The unity-gain bandwidth is the frequency up to which an amplifier with a unity gain may be operated without
greatly distorting the signal. The RC4558 device has a 3-MHz unity-gain bandwidth.
7.3.2 Common-Mode Rejection Ratio
The common-mode rejection ratio (CMRR) of an amplifier is a measure of how well the device rejects unwanted
input signals common to both input leads. It is found by taking the ratio of the change in input offset voltage to
the change in the input voltage, then converting to decibels. Ideally the CMRR is infinite, but in practice,
amplifiers are designed to have it as high as possible. The CMRR of the RC4558 device is 90 dB.
7.3.3 Slew Rate
The slew rate is the rate at which an operational amplifier can change its output when there is a change on the
input. The RC4558 device has a 1.7 V/μs slew rate.
7.4 Device Functional Modes
The RC4558 device is powered on when the supply is connected. Each of these devices can be operated as a
single supply operational amplifier or dual supply amplifier depending on the application.
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8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Typical Application
Some applications require differential signals. Figure 14 shows a simple circuit to convert a single-ended input of
2 V to 10 V into differential output of ±8 V on a single 15-V supply. The output range is intentionally limited to
maximize linearity. The circuit is composed of two amplifiers. One amplifier acts as a buffer and creates a
voltage, VOUT+. The second amplifier inverts the input and adds a reference voltage to generate VOUT–. Both
VOUT+ and VOUT– range from 2 V to 10 V. The difference, VDIFF, is the difference between VOUT+ and VOUT–.
R2
15 V
R1
VOUT+
R3
VREF
12 V
+
R4
VDIFF
±
VOUT+
+
VIN
Figure 14. Schematic for Single-Ended Input to Differential Output Conversion
10
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Typical Application (continued)
8.1.1 Design Requirements
The design requirements are as follows:
• Supply voltage: 15 V
• Reference voltage: 12V
• Input: 2 V to 10 V
• Output differential: ±8 V
8.1.2 Detailed Design Procedure
The circuit in Figure 14 takes a single-ended input signal, VIN, and generates two output signals, VOUT+ and
VOUT– using two amplifiers and a reference voltage, VREF. VOUT+ is the output of the first amplifier and is a
buffered version of the input signal, VIN (see Equation 1). VOUT– is the output of the second amplifier which uses
VREF to add an offset voltage to VIN and feedback to add inverting gain. The transfer function for VOUT– is
Equation 2.
VOUT+ = VIN
(1)
æ R 44 ö æ R22 ö
R2
VOUT
- VINin ´ 2
out - = VREF
ref ´ ç
÷ ´ ç1 +
÷
+ R 44 ø è
R11 ø
R11
è R33+
(2)
The differential output signal, VDIFF, is the difference between the two single-ended output signals, VOUT+ and
VOUT–. Equation 3 shows the transfer function for VDIFF. By applying the conditions that R1 = R2 and R3 = R4, the
transfer function is simplified into Equation 6. Using this configuration, the maximum input signal is equal to the
reference voltage and the maximum output of each amplifier is equal to the VREF. The differential output range is
2×VREF. Furthermore, the common mode voltage will be one half of VREF (see Equation 7).
æ
öæ
æ
R ö
R4
R2 ö
VD IF F = V O U T + - V O U T - = VIN ´ ç 1 + 2 ÷ - VR E F ´ ç
÷ ç1 +
÷
R1 ø
R1 ø
è
è R3 + R4 ø è
VOUT+ = VIN
VOUT– = VREF – VIN
VDIFF = 2×VIN – VREF
(3)
(4)
(5)
(6)
+ VOUT - ö 1
æV
Vcm = ç OUT +
÷ = VREF
2
è
ø 2
(7)
8.1.2.1 Amplifier Selection
Linearity over the input range is key for good dc accuracy. The common mode input range and the output swing
limitations determine the linearity. In general, an amplifier with rail-to-rail input and output swing is required.
Bandwidth is a key concern for this design. Because RC4558 has a bandwidth of 3 MHz, this circuit will only be
able to process signals with frequencies of less than 3 MHz.
8.1.2.2 Passive Component Selection
Because the transfer function of VOUT– is heavily reliant on resistors (R1, R2, R3, and R4), use resistors with low
tolerances to maximize performance and minimize error. This design used resistors with resistance values of
36 kΩ with tolerances measured to be within 2%. But, if the noise of the system is a key parameter, the user can
select smaller resistance values (6 kΩ or lower) to keep the overall system noise low. This ensures that the noise
from the resistors is lower than the amplifier noise.
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Typical Application (continued)
8.1.3 Application Curves
The measured transfer functions in Figure 15, Figure 16, and Figure 17 were generated by sweeping the input
voltage from 0 V to 12 V. However, this design should only be used between 2 V and 10 V for optimum linearity.
16
16
12
14
12
VOUT+ (V)
VDIFF (V)
8
4
0
10
8
6
±4
4
±8
2
0
±12
0
2
4
6
8
10
VIN (V)
0
12
2
4
6
VIN (V)
C003
Figure 15. Differential Output Voltage Node vs Input
Voltage
8
10
12
C001
Figure 16. Positive Output Voltage Node vs Input Voltage
12
10
VOUTt (V)
8
6
4
2
0
0
2
4
6
8
VIN (V)
10
12
C002
Figure 17. Positive Output Voltage Node vs Input Voltage
12
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9 Power Supply Recommendations
The RC4558 device is specified for operation from ±5 V to ±15 V; many specifications apply from –0°C to 70°C.
The Typical Characteristics section presents parameters that can exhibit significant variance with regard to
operating voltage or temperature.
CAUTION
Supply voltages outside of the ±18-V range can permanently damage the device (see
the Absolute Maximum Ratings ).
Place 0.1-μF bypass capacitors close to the power-supply pins to reduce errors coupling in from noisy or high
impedance power supplies. For more detailed information on bypass capacitor placement, refer to the Layout
Guidelines.
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10 Layout
10.1 Layout Guidelines
For best operational performance of the device, use good PCB layout practices, including:
Noise can propagate into analog circuitry through the power pins of the circuit as a whole and the operational
amplifier. Bypass capacitors are used to reduce the coupled noise by providing low impedance power
sources local to the analog circuitry.
– Connect low-ESR, 0.1-μF ceramic bypass capacitors between each supply pin and ground, placed as
close to the device as possible. A single bypass capacitor from V+ to ground is applicable for single
supply applications.
Separate grounding for analog and digital portions of circuitry is one of the simplest and most-effective
methods of noise suppression. One or more layers on multilayer PCBs are usually devoted to ground planes.
A ground plane helps distribute heat and reduces EMI noise pickup. Make sure to physically separate digital
and analog grounds, paying attention to the flow of the ground current. For more detailed information, refer to
Circuit Board Layout Techniques, (SLOA089).
To reduce parasitic coupling, run the input traces as far away from the supply or output traces as possible. If
it is not possible to keep them separate, it is much better to cross the sensitive trace perpendicular as
opposed to in parallel with the noisy trace.
Place the external components as close to the device as possible. Keeping RF and RG close to the inverting
input minimizes parasitic capacitance, as shown in Layout Example.
Keep the length of input traces as short as possible. Always remember that the input traces are the most
sensitive part of the circuit.
Consider a driven, low-impedance guard ring around the critical traces. A guard ring can significantly reduce
leakage currents from nearby traces that are at different potentials.
•
•
•
•
•
•
10.2 Layout Example
VIN
RIN
RG
+
VOUT
RF
Figure 18. Operational Amplifier Schematic for Noninverting Configuration
Place components close to
device and to each other to
reduce parasitic errors
Run the input traces as far
away from the supply lines
as possible
VS+
RF
OUT1
VCC+
GND
IN1í
OUT2
VIN
IN1+
IN2í
VCCí
IN2+
RG
GND
RIN
Use low-ESR, ceramic
bypass capacitor
Only needed for
dual-supply
operation
GND
VS(or GND for single supply)
Ground (GND) plane on another layer
Figure 19. Operational Amplifier Board Layout for Noninverting Configuration
14
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11 Device and Documentation Support
11.1 Trademarks
All trademarks are the property of their respective owners.
11.2 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
11.3 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical packaging and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser based versions of this data sheet, refer to the left hand navigation.
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Product Folder Links: RC4558
15
PACKAGE OPTION ADDENDUM
www.ti.com
14-Aug-2021
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
RC4558D
ACTIVE
SOIC
D
8
75
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
0 to 70
RC4558
RC4558DE4
ACTIVE
SOIC
D
8
75
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
0 to 70
RC4558
RC4558DGKR
ACTIVE
VSSOP
DGK
8
2500
RoHS & Green NIPDAU | NIPDAUAG
Level-1-260C-UNLIM
0 to 70
(YRP, YRS, YRU)
RC4558DGKRG4
ACTIVE
VSSOP
DGK
8
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
0 to 70
(YRP, YRS, YRU)
RC4558DR
ACTIVE
SOIC
D
8
2500
RoHS & Green
NIPDAU | SN
Level-1-260C-UNLIM
0 to 70
RC4558
RC4558DRG3
ACTIVE
SOIC
D
8
2500
RoHS & Green
SN
Level-1-260C-UNLIM
0 to 70
RC4558
RC4558DRG4
ACTIVE
SOIC
D
8
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
0 to 70
RC4558
RC4558ID
ACTIVE
SOIC
D
8
75
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
R4558I
RC4558IDGKR
ACTIVE
VSSOP
DGK
8
2500
RoHS & Green NIPDAU | NIPDAUAG
Level-1-260C-UNLIM
-40 to 85
(YSP, YSS, YSU)
RC4558IDGKRG4
ACTIVE
VSSOP
DGK
8
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
(YSP, YSS, YSU)
RC4558IDR
ACTIVE
SOIC
D
8
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
R4558I
RC4558IDRG4
ACTIVE
SOIC
D
8
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
R4558I
RC4558IP
ACTIVE
PDIP
P
8
50
RoHS & Green
NIPDAU
N / A for Pkg Type
-40 to 85
RC4558IP
RC4558IPW
ACTIVE
TSSOP
PW
8
150
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
R4558I
RC4558IPWR
ACTIVE
TSSOP
PW
8
2000
RoHS & Green
NIPDAU | SN
Level-1-260C-UNLIM
-40 to 85
R4558I
RC4558P
ACTIVE
PDIP
P
8
50
RoHS & Green
NIPDAU
N / A for Pkg Type
0 to 70
RC4558P
RC4558PE4
ACTIVE
PDIP
P
8
50
RoHS & Green
NIPDAU
N / A for Pkg Type
0 to 70
RC4558P
RC4558PSR
ACTIVE
SO
PS
8
2000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
0 to 70
R4558
RC4558PSRG4
ACTIVE
SO
PS
8
2000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
0 to 70
R4558
RC4558PW
ACTIVE
TSSOP
PW
8
150
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
0 to 70
R4558
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
14-Aug-2021
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
RoHS & Green
NIPDAU | SN
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
RC4558PWR
ACTIVE
TSSOP
PW
8
2000
Level-1-260C-UNLIM
0 to 70
R4558
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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