SM72295
www.ti.com
SNVS688E – OCTOBER 2010 – REVISED APRIL 2013
SM72295 Photovoltaic Full Bridge Driver
Check for Samples: SM72295
FEATURES
DESCRIPTION
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The SM72295 is designed to drive 4 discrete N type
MOSFET’s in a full bridge configuration. The drivers
provide 3A of peak current for fast efficient switching
and integrated high speed bootstrap diodes. Current
sensing is provided by 2 transconductance amplifiers
with externally programmable gain and filtering to
remove ripple current to provide average current
information to the control circuit. The current sense
amplifiers have buffered outputs available to provide
a low impedance interface to an A/D converter if
needed. An externally programmable input over
voltage comparator is also included to shutdown all
outputs. Under voltage lockout with a PGOOD
indicator prevents the drivers from operating if VCC is
too low.
1
2
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Renewable Energy Grade
Dual Half Bridge MOSFET Drivers
Integrated 100V Bootstrap Diodes
Independent High and Low Driver Logic Inputs
Bootstrap Supply Voltage Range up to 115V
DC
Two Current Sense Amplifiers with Externally
Programmable Gain and Buffered Outputs
Programmable Over Voltage Protection
Supply Rail Under-Voltage Lockouts with
Power Good Indicator
PACKAGE
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SOIC-28
Typical Application Circuit
+
R16
10m
R15
10m
+
R10
R12
R11
PV
Vout
Vin
-
C5
0.47 uF
C6
1
uF
C1
R9
10k
R13 R14
-
C4
0.47 uF
C3
1
uF
5V
HSB
VDD
OVS
OVP
IOUT
SOB
SIB
HOB
PGOOD
BOUT
HBB
LIB
LOB
VCCB
R6
500
R5
500
AGND
SM72295
HIB
PGND
LIA
HBA
VCCA
BIN
HIA
HOA
SOA
IIN
LOA
HSA
SIA
10V
R7
500
C10
10n
C8
10 nF
optional
optional
C7
R3
40k
C2
R8
500
R4
40k
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2010–2013, Texas Instruments Incorporated
SM72295
SNVS688E – OCTOBER 2010 – REVISED APRIL 2013
www.ti.com
Connection Diagram
1
2
3
4
5
6
7
8
9
10
11
12
13
14
SIA
HSA
SOA
HOA
IIN
HBA
BIN
AGND
LIA
HIA
SM72295
28
27
26
VCCA
25
LOA
24
PGND
23
LOB
22
21
HIB
VCCB
LIB
HBB
20
PGOOD
HOB
19
BOUT
HSB
IOUT
VDD
SOB
OVS
SIB
OVP
18
17
16
15
Figure 1. Top View
SOIC-28
PIN DESCRIPTIONS
2
Pin
Name
Description
1
Application Information
SIA
Sense high input for input current
sense transconductance amplifier
Tie to positive side of the current sense resistor through an external gain
programming resistor (RI). Amplifier transconductance is 1/RI.
2
S0A
Sense low input for input current
sense transconductance amplifier
Tie to negative side of the current sense resistor through an external gain
programming resistor. Amplifier transconductance is 1/RI.
3
IIN
Output for current sense
transconductance amplifier
Output of the input current sense amplifier. Requires an external resistor to
ground (RL). Gain is RL/RI, where RI is the external resistor in series with the
SIA pin.
4
BIN
Buffered IIN
Buffered IIN.
Analog ground
Ground return for the analog circuitry. Tie to the ground plane under the IC
5
AGND
6, 9
LIA, LIB
Low side driver control input
The inputs have TTL type thresholds. Unused inputs should be tied to ground
and not left open.
7, 8
HIA, HIB High side driver control input
The inputs have TTL type thresholds. Unused inputs should be tied to ground
and not left open.
10
PGOOD
Power good indicator output
Open drain output with an internal pull-up resistor to VDD indicating VCC is in
regulation. PGOOD low implies VCC is out of regulation.
11
BOUT
Buffered IOUT
Buffered IOUT.
12
IOUT
Output for current sense
comparator.
Output of the output current sense amplifier. Requires an external resistor to
ground (RL). Gain is RL/RI, where RI is the external resistor in series with the
SIB pin.
13
S0B
Sense low input for output current
sense amplifier
Tie to negative side of the current sense resistor through an external gain
programming resistor. Amplifier transconductance is 1/RI.
14
SIB
Sense high input for output current
sense amplifier
Tie to positive side of the current sense resistor through an external gain
programming resistor (RI). Amplifier transconductance is 1/RI.
15
OVP
Over voltage indicator output
Open drain output with an internal pull-up resistor to VDD indicating OVS >VDD.
OVP is low when OVS>VDD.
16
OVS
Sense input for over voltage
Requires an external resistor divider. VDD is the reference voltage.
17
VDD
3.3V or 5V regulator output
Bypass with 0.1uF. Reference for over voltage shutdown and IOUT/IIN clamp
18, 28
HSA,
HSB
High side MOSFET source
connection
Connect to bootstrap capacitor negative terminal and the source of the high side
MOSFET.
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SM72295
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SNVS688E – OCTOBER 2010 – REVISED APRIL 2013
PIN DESCRIPTIONS (continued)
Pin
Name
Description
Application Information
19, 27
HOA,
HOB
High side gate driver output
Connect to gate of high side MOSFET with a short low inductance path.
20,26
HBA,
HBB
High side gate driver bootstrap rail. Connect the positive terminal of the bootstrap capacitor to HB and the negative
terminal to HS. The bootstrap capacitor should be placed as close to IC as
possible.
21,25
VCCA,
VCCB
22, 24
23
Positive gate drive supply
Locally decouple to PGND using low ESR/ESL capacitor located as close to IC
as possible.
LOA,
LOB
Low side gate driver output
Connect to the gate of the low side MOSFET with a short low inductance path.
PGND
Power ground return
Ground return for the LO drivers. Tie to the ground plane under the IC
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings (1) (2)
VCCA, VCCB
-0.3 to 14V
VDD
-0.3 to 7V
HBA to HSA, HBB to HSB
-0.3 to 15V
LIA,LIB,HIA,HIB,OVS
-0.3 to 7V
LOA,LOB
-0.3 to VCC+ 0.3V
HOA,HOB
HS–0.3 to HB + 0.3V
SIA,SOA,SIB,SOB
-0.3 to 100V
SIA to SOA, SIB to SOB
-0.8 to 0.8V
HSA,HSB (3)
-5 to 100V
HBA, HBB
115V
PGOOD, OVP
-0.3 to VDD
IIN, IOUT
-0.3 to VDD
BIN, BOUT
-0.3 to VDD
Junction Temperature
150°C
Storage Temperatue Range
ESD Rating (4)
(1)
(2)
(3)
(4)
-55°C to +150°C
Human Body Model
2 kV
Absolute Maximum Ratings indicate limits beyond which damage to the component may occur. Operating Ratings are conditions under
which operation of the device is ensured. Operating Ratings do not imply ensured performance limits. For ensured performance limits
and associated test conditions, see the Electrical Characteristics tables.
If Military/Aerospace specified devices are required, please contact the TI Sales Office/ Distributors for availability and specifications.
In the application the HS nodes are clamped by the body diode of the external lower N-MOSFET, therefore the HS node will generally
not exceed –1V. However, in some applications, board resistance and inductance may result in the HS node exceeding this stated
voltage transiently. If negative transients occur, the HS voltage must never be more negative than VCC-15V. For example if VCC = 10V,
the negative transients at HS must not exceed –5V.
The human body model is a 100 pF capacitor discharged through a 1.5 kΩ resistor into each pin. 2 kV for all pins except HB, HO & HS
which are rated at 1000V.
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Product Folder Links: SM72295
3
SM72295
SNVS688E – OCTOBER 2010 – REVISED APRIL 2013
www.ti.com
Recommended Operating Conditions
VCCA,VCCB
+8V to +14V
VDD
+3V to 7V
SI, SO common mode
VDD+1V to 100V
HS (1)
-1V to 100V
HBA, HBB
HS+7V to HS+14V
HS Slew Rate
