SN54HC273VTDG1

SN54HC273-DIE www.ti.com SCLS735 – JUNE 2013 RAD-TOLERANT SPACE GRADE DIE, QUADRUPLE 2-INPUT POSITIVE-AND GATES Check for Samples: SN54HC273-DIE FEATURES 1 • • • • • • • • Wide Operating Voltage Range Outputs Can Drive Up To 10 LSTTL Loads Low Power Consumption Typical tpd = 12 ns Low Input Current Contain Eight Flip-Flops With Single-Rail Outputs Direct Clear Input Applications Include: – Buffer/Storage Registers – Shift Registers – Pattern Generators DESCRIPTION Information at the data (D) inputs meeting the setup time requirements is transferred to the Q outputs on the positive-going edge of the clock (CLK) pulse. Clock triggering occurs at a particular voltage level and is not related directly to the transition time of the positive-going pulse. When CLK is at either the high or low level, the D input has no effect at the output. Table 1. FUNCTION TABLE (each flip-flop) INPUTS OUPUT Q CLR CLK D L X X L H ↑ H H H ↑ L L H L X Q0 ORDERING INFORMATION (1) (1) (2) PRODUCT PACKAGE DESIGNATOR PACKAGE SN54HC273V TD Bare die in waffle pack (2) ORDERABLE PART NUMBER PACKAGE QUANTITY SN54HC273VTDG1 100 SN54HC273VTDG2 10 For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI web site at www.ti.com. Processing is per the Texas Instruments space production baseline and is in compliance with the Texas Instruments Quality Control System in effect at the time of manufacture. Electrical screening consists of DC parametric and functional testing at room temperature only. Unless otherwise specified by Texas Instruments AC performance and performance over temperature is not warranted. Visual Inspection is performed in accordance with MIL-STD-883 Test Method 2010 Condition B at 75X minimum. 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2013, Texas Instruments Incorporated On products compliant to MIL-PRF-38535, all parameters are tested unless otherwise noted. On all other products, production processing does not necessarily include testing of all parameters. SN54HC273-DIE SCLS735 – JUNE 2013 www.ti.com This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. BARE DIE INFORMATION 2 DIE THICKNESS BACKSIDE FINISH BACKSIDE POTENTIAL BOND PAD METALLIZATION COMPOSITION BOND PAD THICKNESS 10.5 mils. Silicon with backgrind Floating TiW/AlCu2% 1210 nm Submit Documentation Feedback Copyright © 2013, Texas Instruments Incorporated Product Folder Links: SN54HC273-DIE SN54HC273-DIE www.ti.com SCLS735 – JUNE 2013 Table 2. Bond Pad Coordinates in Microns DESCRIPTION PAD NUMBER X MIN Y MIN X MAX Y MAX CLR 1 124.05 606.65 214.05 696.65 1Q 2 124.05 216.95 214.05 306.95 1D 3 369.75 119.75 459.75 209.75 2D 4 562.35 132.35 652.35 222.35 2Q 5 706.35 109.85 796.35 199.85 3Q 6 1210.35 132.35 1300.35 222.35 3D 7 1375.05 132.35 1465.05 222.35 4D 8 1591.95 132.35 1681.95 222.35 4Q 9 1897.05 162.95 1987.05 252.95 GND 10 1901.55 567.95 1991.55 657.95 CLK 11 1901.55 786.65 1991.55 876.65 5Q 12 1897.05 1135.85 1987.05 1225.85 5D 13 1599.15 1264.55 1689.15 1354.55 6D 14 1351.65 1267.25 1441.65 1357.25 6Q 15 1178.85 1268.15 1268.85 1358.15 7Q 16 637.05 1268.15 727.05 1358.15 7D 17 473.25 1267.25 563.25 1357.25 8D 18 310.35 1267.25 400.35 1357.25 8Q 19 124.05 1154.75 214.05 1244.75 VCC 20 124.05 769.55 214.05 859.55 Submit Documentation Feedback Copyright © 2013, Texas Instruments Incorporated Product Folder Links: SN54HC273-DIE 3 PACKAGE OPTION ADDENDUM www.ti.com 16-Jun-2022 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) (3) Device Marking Samples (4/5) (6) SN54HC273VTDG1 ACTIVE 0 100 RoHS & Green Call TI N / A for Pkg Type 25 to 25 Samples SN54HC273VTDG2 ACTIVE 0 10 RoHS & Green Call TI N / A for Pkg Type 25 to 25 Samples (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of