SN65C3221E,, SN75C3221E
www.ti.com .................................................................................................................................................. SLLS694B – NOVEMBER 2005 – REVISED APRIL 2009
3-V TO 5.5-V SINGLE-CHANNEL RS-232 1-Mbit/s LINE DRIVER/RECEIVER
WITH ±15-kV IEC ESD PROTECTION
FEATURES
1
•
•
•
•
•
•
•
•
ESD Protection for RS-232 Pins
– ±15-kV Human-Body Model (HBM)
– ±8-kV IEC 61000-4-2 Contact Discharge
– ±15-kV IEC 61000-4-2 Air-Gap Discharge
Operate With 3-V to 5.5-V VCC Supply
Operate up to 1 Mbit/s
Low Standby Current . . . 1 µA Typ
External Capacitors . . . 4 × 0.1 µF
Accepts 5-V Logic Input With 3.3-V Supply
RS-232 Bus-Pin ESD Protection Exceeds ±15
kV Using Human-Body Model (HBM)
Auto-Powerdown Feature Automatically
Disables Drivers for Power Savings
DB OR PW PACKAGE
(TOP VIEW)
EN
C1+
V+
C1−
C2+
C2−
V−
RIN
1
16
2
15
3
14
4
13
5
12
6
11
7
10
8
9
FORCEOFF
VCC
GND
DOUT
FORCEON
DIN
INVALID
ROUT
APPLICATIONS
•
•
•
•
•
Battery-Powered, Hand-Held, and Portable
Equipment
PDAs and Palmtop PCs
Notebooks, Sub-Notebooks, and Laptops
Digital Cameras
Mobile Phones and Wireless Devices
DESCRIPTION/ORDERING INFORMATION
The SN65C3221E and SN75C3221E consist of one line driver, one line receiver, and a dual charge-pump circuit
with ±15-kV IEC ESD protection pin to pin (serial-port connection pins, including GND). These devices provide
the electrical interface between an asynchronous communication controller and the serial-port connector. The
charge pump and four small external capacitors allow operation from a single 3-V to 5.5-V supply. These devices
operate at data signaling rates up to 1 Mbit/s and a driver output slew rate of 24 V/µs to 150 V/µs.
Flexible control options for power management are available when the serial port is inactive. The
auto-powerdown feature functions when FORCEON is low and FORCEOFF is high. During this mode of
operation, if the devices do not sense a valid RS-232 signal on the receiver input, the driver output is disabled. If
FORCEOFF is set low and EN is high, both the driver and receiver are shut off, and the supply current is
reduced to 1 µA. Disconnecting the serial port or turning off the peripheral drivers causes the auto-powerdown
condition to occur. Auto-powerdown can be disabled when FORCEON and FORCEOFF are high. With
auto-powerdown enabled, the device is activated automatically when a valid signal is applied to the receiver
input. The INVALID output notifies the user if an RS-232 signal is present at the receiver input. INVALID is high
(valid data) if the receiver input voltage is greater than 2.7 V or less than –2.7 V, or has been between –0.3 V
and 0.3 V for less than 30 µs. INVALID is low (invalid data) if the receiver input voltage is between –0.3 V and
0.3 V for more than 30 µs. See Figure 5 for receiver input levels.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2005–2009, Texas Instruments Incorporated
SN65C3221E,, SN75C3221E
SLLS694B – NOVEMBER 2005 – REVISED APRIL 2009 .................................................................................................................................................. www.ti.com
ORDERING INFORMATION
TA
PACKAGE
SSOP – DB
–0°C to 70°C
TSSOP – PW
SSOP – DB
–40°C to 85°C
(1)
(2)
TSSOP – PW
(1) (2)
ORDERABLE PART NUMBER
Reel of 2000
SN75C3221EDBR
Tube of 90
SN75C3221EPW
Reel of 2000
SN75C3221EPWR
Reel of 2000
SN65C3221EDBR
Tube of 90
SN65C3221EPW
Reel of 2000
SN65C3221EPWR
TOP-SIDE MARKING
MY221E
MY221E
MU221E
MU221E
Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available at
www.ti.com/sc/package.
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
website at www.ti.com.
FUNCTION TABLES
abc
EACH DRIVER (1)
INPUTS
DIN
(1)
FORCEON
FORCEOFF
VALID RIN
RS-232 LEVEL
OUTPUT
DOUT
DRIVER STATUS
X
X
L
X
Z
Powered off
L
H
H
X
H
H
H
H
X
L
Normal operation with
auto-powerdown disabled
L
L
H
Yes
H
H
L
H
Yes
L
L
L
H
No
Z
H
L
H
No
Z
Normal operation with
auto-powerdown enabled
Powered off by
auto-powerdown feature
H = high level, L = low level, X = irrelevant, Z = high impedance
abc
EACH RECEIVER (1)
INPUTS
(1)
2
OUTPUT
ROUT
RIN
EN
VALID RIN
RS-232 LEVEL
L
L
X
H
L
X
L
X
H
X
Z
Open
L
No
H
H
H = high level, L = low level, X = irrelevant, Z = high impedance (off),
Open = disconnected input or connected driver off
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LOGIC DIAGRAM (POSITIVE LOGIC)
DIN
FORCEOFF
FORCEON
ROUT
11
13
DOUT
16
12
Auto-powerdown
9
10
8
1
Copyright © 2005–2009, Texas Instruments Incorporated
Product Folder Link(s): SN65C3221E SN75C3221E
INVALID
RIN
EN
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SN65C3221E,, SN75C3221E
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Table 1. 1-Mbit/s RS-232 Parts
DRIVER
NO.
RECEIVER
NO.
ESD
SUPPLY
VCC
(V)
FEATURE
PIN/PACKAGE
SN65C3221E
1
1
±15-kV Air-Gap,
±8-kV Contact,
±15-kV HBM
3.3 or 5
Auto powerdown
16-pin SOIC,
SSOP, TSSOP
SN65C3232E
2
2
±15-kV Air-Gap,
±8-kV Contact,
±15-kV HBM
3.3 or 5
Low pin count
16-pin SOIC,
SSOP, TSSOP
MAX3227I
1
1
±8-kV Air-Gap,
±8-k V Contact,
±15-kV HBM
3.3 or 5
Auto powerdown plus,
ready signal
16-pin SSOP
SN65C3221
1
1
±15-kV HBM
3.3 or 5
Auto powerdown
16-pin SOIC,
SSOP, TSSOP
SN65C3223
2
2
±15-kV HBM
3.3 or 5
Auto powerdown,
enable signal
20-pin SOIC,
SSOP, TSSOP
SN65C3222
2
2
±15-kV HBM
3.3 or 5
Enable,
powerdown signal
20-pin SOIC,
SSOP, TSSOP
SN65C3232
2
2
±15-kV HBM
3.3 or 5
Low pin count
16-pin SOIC,
SSOP, TSSOP
SN65C3238
5
3
±15-kV HBM
3.3 or 5
Auto powerdown plus
28-pin SOIC,
SSOP, TSSOP
SN65C3243
3
5
±15-kV HBM
3.3 or 5
Auto powerdown
28-pin SOIC,
SSOP, TSSOP
SN75C3221E
1
1
±15-kV Air-Gap,
±8-kV Contact,
±15-kV HBM
3.3 or 5
Auto powerdown
16-pin SOIC,
SSOP, TSSOP
SN75C3232E
2
2
±15-kV Air-Gap,
±8-kV Contact,
±15-kV HBM
3.3 or 5
Low pin count
16-pin SOIC,
SSOP, TSSOP
MAX3227C
1
1
±8-kV Air-Gap,
±8-kV Contact,
±15-kV HBM
3.3 or 5
Auto powerdown plus,
ready signal
16-pin SSOP
1
1
±15-kV HBM
3.3 or 5
Auto powerdown
16-pin SOIC,
SSOP, TSSOP
SN75C3223
2
2
±15-kV HBM
3.5 or 5
Auto powerdown,
enable signal
20-pin SOIC,
SSOP, TSSOP
SN75C3222
2
2
±15-kV HBM
3.3 or 5
Enable,
powerdown signal
20-pin SOIC,
SSOP, TSSOP
SN75C3232
2
2
±15-kV HBM
3.3 or 5
Low pin count
16-pin SOIC,
SSOP, TSSOP
SN75C3238
5
3
±15-kV HBM
3.3 or 5
Auto powerdown plus
28-pin SOIC,
SSOP, TSSOP
SN75C3243
3
5
±15-kV HBM
3.3 or 5
Auto powerdown
28-pin SOIC,
SSOP, TSSOP
PART
NO.
TEMPERATURE
RANGE
–40°C to 85°C
SN75C3221
0°C to 70°C
4
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Absolute Maximum Ratings (1)
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
VCC
Supply voltage range (2)
–0.3
6
V
V+
Positive output supply voltage range (2)
–0.3
7
V
0.3
–7
V
13
V
V–
Negative output supply voltage range
(2)
V+ – V– Supply voltage difference (2)
VI
Input voltage range
VO
Output voltage range
θJA
Package thermal impedance (3) (4)
TJ
Operating virtual junction temperature
Tstg
Storage temperature range
(1)
(2)
(3)
(4)
Driver (FORCEOFF, FORCEON, EN)
–0.3
6
Receiver
–25
25
Driver
–13.2
13.2
–0.3
VCC + 0.3
Receiver (INVALID)
DB package
82
PW package
108
–65
UNIT
V
V
°C/W
150
°C
150
°C
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltages are with respect to network GND.
Maximum power dissipation is a function of TJ(max), θJA, and TA. The maximum allowable power dissipation at any allowable ambient
temperature is PD = (TJ(max) – TA)/θJA. Operating at the absolute maximum TJ of 150°C can affect reliability.
The package thermal impedance is calculated in accordance with JESD 51-7.
Recommended Operating Conditions (1)
See Figure 6
Supply voltage
VCC = 5 V
VIH
Driver and control
high-level input voltage
DIN, FORCEOFF, FORCEON, EN
VIL
Driver and control
low-level input voltage
DIN, FORCEOFF, FORCEON, EN
VI
Driver and control input voltage
DIN, FORCEOFF, FORCEON
VI
Receiver input voltage
TA
Operating free-air temperature
(1)
MIN
NOM
MAX
3
3.3
3.6
4.5
5
5.5
VCC = 3.3 V
VCC = 3.3 V
VCC = 5 V
UNIT
V
2
V
2.4
0.8
V
0
5.5
V
–25
25
V
SN65C3221E
–40
85
SN75C3221E
0
70
°C
Test conditions are C1–C4 = 0.1 µF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 µF, C2–C4 = 0.33 µF at VCC = 5 V ± 0.5 V.
Electrical Characteristics (1)
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) (see Figure 6)
PARAMETER
II
ICC
(1)
(2)
Input leakage current
Supply current
(TA = 25°C)
TEST CONDITIONS
MIN
FORCEOFF, FORCEON, EN
TYP (2)
MAX
±0.01
±1
µA
0.3
1
mA
Auto-powerdown disabled
No load,
FORCEOFF and FORCEON at VCC
Powered off
No load, FORCEOFF at GND
1
10
Auto-powerdown enabled
No load, FORCEOFF at VCC,
FORCEON at GND,
All RIN are open or grounded
1
10
UNIT
µA
Test conditions are C1–C4 = 0.1 µF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 µF, C2–C4 = 0.33 µF at VCC = 5 V ± 0.5 V.
All typical values are at VCC = 3.3 V or VCC = 5 V, and TA = 25°C.
Copyright © 2005–2009, Texas Instruments Incorporated
Product Folder Link(s): SN65C3221E SN75C3221E
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DRIVER SECTION
abc
Electrical Characteristics (1)
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) (see Figure 6)
PARAMETER
TEST CONDITIONS
MIN
TYP (2) MAX
VOH
High-level output voltage
DOUT at RL = 3 kΩ to GND,
DIN = GND
5
5.4
VOL
Low-level output voltage
DOUT at RL = 3 kΩ to GND,
DIN = VCC
–5
–5.4
IIH
High-level input current
VI = VCC
IIL
Low-level input current
VI at GND
IOS
Short-circuit output
current (3)
VCC = 3.6 V,
VO = 0 V
VCC = 5.5 V,
VO = 0 V
ro
Output resistance
VCC, V+, and V– = 0 V,
VO = ±2 V
Ioff
Output leakage current
FORCEOFF = GND
(1)
(2)
(3)
V
V
±1
µA
±0.01
±1
µA
±35
±60
±35
±90
±0.01
300
UNIT
mA
Ω
10M
VO = ±12 V,
VCC = 3 V to 3.6 V
±25
VO = ±10 V,
VCC = 4.5 V to 5.5 V
±25
µA
Test conditions are C1–C4 = 0.1 µF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 µF, C2–C4 = 0.33 µF at VCC = 5 V ± 0.5 V.
All typical values are at VCC = 3.3 V or VCC = 5 V, and TA = 25°C.
Short-circuit durations should be controlled to prevent exceeding the device absolute power-dissipation ratings, and not more than one
output should be shorted at a time.
Switching Characteristics (1)
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) (see Figure 6)
PARAMETER
Maximum data rate
(see Figure 1)
TEST CONDITIONS
MIN
CL = 1000 pF
250
RL = 3 kΩ
CL = 250 pF,
VCC = 3 V to 4.5 V
1000
CL = 1000 pF,
VCC = 4.5 V to 5.5 V
1000
tsk(p)
Pulse skew (3)
CL = 150 pF to 2500 pF,
RL = 3 kΩ to 7 kΩ,
See Figure 2
SR(tr)
Slew rate,
transition region
(see Figure 1)
VCC = 3.3 V,
RL = 3 kΩ to 7 kΩ,
CL = 150 pF to 1000 pF
(1)
(2)
(3)
TYP (2)
MAX
kbit/s
100
18
UNIT
ns
150
V/µs
Test conditions are C1–C4 = 0.1 µF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 µF, C2–C4 = 0.33 µF at VCC = 5 V ± 0.5 V.
All typical values are at VCC = 3.3 V or VCC = 5 V, and TA = 25°C.
Pulse skew is defined as |tPLH - tPHL| of each channel of the same device.
ESD Protection
TERMINAL
NAME
TEST CONDITIONS
NO.
TYP
HBM
DOUT
6
13
±15
IEC 61000-4-2 Contact Discharge
±8
IEC 61000-4-2 Air-Gap Discharge
±15
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UNIT
kV
Copyright © 2005–2009, Texas Instruments Incorporated
Product Folder Link(s): SN65C3221E SN75C3221E
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www.ti.com .................................................................................................................................................. SLLS694B – NOVEMBER 2005 – REVISED APRIL 2009
RECEIVER SECTION
abc
Electrical Characteristics (1)
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) (see Figure 6)
PARAMETER
MIN
TYP (2)
VCC – 0.6 V
VCC – 0.1 V
TEST CONDITIONS
VOH
High-level output voltage
IOH = –1 mA
VOL
Low-level output voltage
IOL = 1.6 mA
MAX
V
0.4
VCC = 3.3 V
1.6
2.4
VCC = 5 V
1.9
2.4
VIT+
Positive-going input threshold voltage
VIT–
Negative-going input threshold voltage
Vhys
Input hysteresis (VIT+ – VIT–)
Ioff
Output leakage current
FORCEOFF = 0 V
ri
Input resistance
VI = ±3 V to ±25 V
UNIT
VCC = 3.3 V
0.6
1.1
VCC = 5 V
0.8
1.4
V
V
V
0.5
3
V
±0.05
±10
µA
5
7
kΩ
Test conditions are C1–C4 = 0.1 µF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 µF, C2–C4 = 0.33 µF at VCC = 5 V ± 0.5 V.
All typical values are at VCC = 3.3 V or VCC = 5 V, and TA = 25°C.
(1)
(2)
Switching Characteristics (1)
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) (see Figure 6)
PARAMETER
TEST CONDITIONS
TYP (2)
UNIT
tPLH
Propagation delay time, low- to high-level output
CL = 150 pF, See Figure 3
150
ns
tPHL
Propagation delay time, high- to low-level output
CL = 150 pF, See Figure 3
150
ns
ten
Output enable time
CL = 150 pF, RL = 3 kΩ, See Figure 4
200
ns
tdis
Output disable time
CL = 150 pF, RL = 3 kΩ, See Figure 4
200
ns
tsk(p)
Pulse skew (3)
See Figure 3
50
ns
(1)
(2)
(3)
Test conditions are C1–C4 = 0.1 µF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 µF, C2–C4 = 0.33 µF at VCC = 5 V ± 0.5 V.
All typical values are at VCC = 3.3 V or VCC = 5 V, and TA = 25°C.
Pulse skew is defined as |tPLH - tPHL| of each channel of the same device.
ESD Protection
TERMINAL
NAME
TEST CONDITIONS
NO.
HBM
RIN
8
TYP
UNIT
±15
IEC 61000-4-2 Contact Discharge
±8
IEC 61000-4-2 Air-Gap Discharge
±15
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AUTO-POWERDOWN SECTION
abc
Electrical Characteristics
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) (see Figure 5)
PARAMETER
TEST CONDITIONS
MIN
VT+(valid)
Receiver input threshold
for INVALID high-level output voltage
FORCEON = GND,
FORCEOFF = VCC
VT–(valid)
Receiver input threshold
for INVALID high-level output voltage
FORCEON = GND,
FORCEOFF = VCC
–2.7
VT(invalid)
Receiver input threshold
for INVALID low-level output voltage
FORCEON = GND,
FORCEOFF = VCC
–0.3
VOH
INVALID high-level output voltage
IOH = –1 mA, FORCEON = GND,
FORCEOFF = VCC
VOL
INVALID low-level output voltage
IOL = 1.6 mA, FORCEON = GND,
FORCEOFF = VCC
MAX
UNIT
2.7
V
V
0.3
V
VCC – 0.6
V
0.4
V
Switching Characteristics
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) (see Figure 5)
TYP (1)
PARAMETER
tvalid
Propagation delay time, low- to high-level output
tinvalid
Propagation delay time, high- to low-level output
ten
Supply enable time
(1)
8
UNIT
1
µs
30
µs
100
µs
All typical values are at VCC = 3.3 V or VCC = 5 V, and TA = 25°C.
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PARAMETER MEASUREMENT INFORMATION
FORCEON
3V
Generator
(see Note B)
3V
Input
RS-232
Output
50 Ω
RL
0V
tTHL
CL
(see Note A)
3V
FORCEOFF
3V
3V
Output
−3 V
−3 V
6V
SR(tr) +
t THL or tTLH
TEST CIRCUIT
tTLH
VOH
VOL
VOLTAGE WAVEFORMS
NOTES: A. CL includes probe and jig capacitance.
B. The pulse generator has the following characteristics: PRR = 250 kbit/s, ZO = 50 Ω, 50% duty cycle, tr ≤ 10 ns, tf ≤ 10 ns.
Figure 1. Driver Slew Rate
FORCEON
3V
Generator
(see Note B)
3V
RS-232
Output
50 Ω
RL
Input
1.5 V
1.5 V
0V
CL
(see Note A)
tPLH
tPHL
VOH
3V
FORCEOFF
50%
50%
Output
VOL
TEST CIRCUIT
VOLTAGE WAVEFORMS
NOTES: A. CL includes probe and jig capacitance.
B. The pulse generator has the following characteristics: PRR = 250 kbit/s, ZO = 50 Ω, 50% duty cycle, tr ≤ 10 ns, tf ≤ 10 ns.
Figure 2. Driver Pulse Skew
EN = VCC
3V
Input
1.5 V
1.5 V
−3 V
Output
Generator
(see Note B)
tPHL
50 Ω
tPLH
CL
(see Note A)
VOH
50%
Output
50%
VOL
TEST CIRCUIT
VOLTAGE WAVEFORMS
NOTES: A. CL includes probe and jig capacitance.
B. The pulse generator has the following characteristics: ZO = 50 Ω, 50% duty cycle, tr ≤ 10 ns, tf ≤ 10 ns.
Figure 3. Receiver Propagation Delay Times
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PARAMETER MEASUREMENT INFORMATION
3V
Input
VCC
1.5 V
GND
S1
0V
tPZH
(S1 at GND)
tPHZ
(S1 at GND)
RL
3 V or 0 V
1.5 V
VOH
Output
50%
Output
CL
(see Note A)
EN
Generator
(see Note B)
50 Ω
0.3 V
tPLZ
(S1 at VCC)
tPZL
(S1 at VCC)
0.3 V
Output
50%
VOL
TEST CIRCUIT
NOTES: A.
B.
C.
D.
VOLTAGE WAVEFORMS
CL includes probe and jig capacitance.
The pulse generator has the following characteristics: ZO = 50 Ω, 50% duty cycle, tr ≤ 10 ns, tf ≤ 10 ns.
tPLZ and tPHZ are the same as tdis.
tPZL and tPZH are the same as ten.
Figure 4. Receiver Enable and Disable Times
10
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PARAMETER MEASUREMENT INFORMATION
2.7 V
EN = GND
3V
0V
Receiver
Input
0V
ROUT
Generator
(see Note B)
2.7 V
−2.7 V
−2.7 V
50 Ω
−3 V
tvalid
tinvalid
VCC
Autopowerdown
INVALID
INVALID
Output
CL = 30 pF
(see Note A)
FORCEOFF
FORCEON
DIN
DOUT
50% VCC
50% VCC
0V
ten
V+
≈V+
Supply
Voltages
0.3 V
VCC
0V
0.3 V
V−
≈V−
TEST CIRCUIT
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
VOLTAGE WAVEFORMS
Valid RS-232 Level, INVALID High
2.7 V
Indeterminate
0.3 V
0V
If Signal Remains Within This Region
For More Than 30 µs, INVALID Is Low†
−0.3 V
Indeterminate
−2.7 V
Valid RS-232 Level, INVALID High
†
Auto-powerdown disables drivers and reduces supply
current to 1 µA.
NOTES: A. CL includes probe and jig capacitance.
B. The pulse generator has the following characteristics: PRR = 5 kbit/s, ZO = 50 Ω, 50% duty cycle, tr ≤ 10 ns, tf ≤ 10 ns.
Figure 5. INVALID Propagation Delay Times and Driver Enabling Time
Copyright © 2005–2009, Texas Instruments Incorporated
Product Folder Link(s): SN65C3221E SN75C3221E
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11
SN65C3221E,, SN75C3221E
SLLS694B – NOVEMBER 2005 – REVISED APRIL 2009 .................................................................................................................................................. www.ti.com
APPLICATION INFORMATION
EN
16
1
2
15
VCC
C1+
+
3
C1
+
+
−
−
V+
Autopowerdown
C3(1)
4
−
14
GND
13
6
C2−
7
RIN
12
C2
11
V−
10
C4
+
DOUT
C2+
+
−
CBYPASS = 0.1 µF
C1−
5
−
FORCEOFF
8
9
FORCEON
DIN
INVALID
ROUT
5 kΩ
(1) C3 can be connected to VCC or GND.
NOTES: A. Resistor values shown are nominal.
B. Nonpolarized ceramic capacitors are acceptable. If polarized tantalum or electrolytic capacitors are used, they should be connected
as shown.
VCC vs CAPACITOR VALUES
VCC
C1
C2, C3, and C4
3.3 V ± 0.3 V
5 V ± 0.5 V
3 V to 5.5 V
0.1 µF
0.047 µF
0.1 µF
0.1 µF
0.33 µF
0.47 µF
Figure 6. Typical Operating Circuit and Capacitor Values
12
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Copyright © 2005–2009, Texas Instruments Incorporated
Product Folder Link(s): SN65C3221E SN75C3221E
PACKAGE OPTION ADDENDUM
www.ti.com
6-Feb-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
SN65C3221EDB
ACTIVE
SSOP
DB
16
80
Green (RoHS
& no Sb/Br)
NIPDAU
Level-1-260C-UNLIM
-40 to 85
MU221E
SN65C3221EDBR
ACTIVE
SSOP
DB
16
2000
Green (RoHS
& no Sb/Br)
NIPDAU
Level-1-260C-UNLIM
-40 to 85
MU221E
SN65C3221EPW
ACTIVE
TSSOP
PW
16
90
Green (RoHS
& no Sb/Br)
NIPDAU
Level-1-260C-UNLIM
-40 to 85
MU221E
SN65C3221EPWG4
ACTIVE
TSSOP
PW
16
90
Green (RoHS
& no Sb/Br)
NIPDAU
Level-1-260C-UNLIM
-40 to 85
MU221E
SN65C3221EPWR
ACTIVE
TSSOP
PW
16
2000
Green (RoHS
& no Sb/Br)
NIPDAU
Level-1-260C-UNLIM
-40 to 85
MU221E
SN65C3221EPWRE4
ACTIVE
TSSOP
PW
16
2000
Green (RoHS
& no Sb/Br)
NIPDAU
Level-1-260C-UNLIM
-40 to 85
MU221E
SN75C3221EDB
ACTIVE
SSOP
DB
16
80
Green (RoHS
& no Sb/Br)
NIPDAU
Level-1-260C-UNLIM
0 to 70
MY221E
SN75C3221EDBR
ACTIVE
SSOP
DB
16
2000
Green (RoHS
& no Sb/Br)
NIPDAU
Level-1-260C-UNLIM
0 to 70
MY221E
SN75C3221EPW
ACTIVE
TSSOP
PW
16
90
Green (RoHS
& no Sb/Br)
NIPDAU
Level-1-260C-UNLIM
0 to 70
MY221E
SN75C3221EPWR
ACTIVE
TSSOP
PW
16
2000
Green (RoHS
& no Sb/Br)
NIPDAU
Level-1-260C-UNLIM
0 to 70
MY221E
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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