SLLS534B − MAY 2002 − REVISED OCTOBER 2004
D
D
D
D
D
D
D
DB, DW, OR PW PACKAGE
(TOP VIEW)
Operates With 3-V to 5.5-V VCC Supply
Operates Up To 1 Mbit/s
Low Standby Current . . . 1 µA Typ
External Capacitors . . . 4 × 0.1 µF
Accepts 5-V Logic Input With 3.3-V Supply
RS-232 Bus-Pin ESD Protection Exceeds
±15 kV Using Human-Body Model (HBM)
Applications
− Battery-Powered Systems, PDAs,
Notebooks, Laptops, Palmtop PCs, and
Hand-Held Equipment
EN
C1+
V+
C1−
C2+
C2−
V−
DOUT2
RIN2
ROUT2
description/ordering information
1
20
2
19
3
18
4
17
5
16
6
15
7
14
8
13
9
12
10
11
PWRDOWN
VCC
GND
DOUT1
RIN1
ROUT1
NC
DIN1
DIN2
NC
NC − No internal connection
The SN65C3222 and SN75C3222 consist of two line drivers, two line receivers, and a dual charge-pump circuit
with ±15-kV ESD protection pin to pin (serial-port connection pins, including GND). The devices provide the
electrical interface between an asynchronous communication controller and the serial-port connector. The
charge pump and four small external capacitors allow operation from a single 3-V to 5.5-V supply. The devices
operate at data signaling rates up to 1 Mbit/s and a driver output slew rate of 24 V/µs to 150 V/µs.
The SN65C3222 and SN75C3222 can be placed in the power-down mode by setting PWRDOWN low, which
draws only 1 µA from the power supply. When the devices are powered down, the receivers remain active while
the drivers are placed in the high-impedance state. Also, during power down, the onboard charge pump is
disabled, V+ is lowered to VCC, and V− is raised toward GND. Receiver outputs also can be placed in the
high-impedance state by setting EN high.
ORDERING INFORMATION
SOIC (DW)
−0°C
70°C
−0
C to 70
C
SSOP (DB)
TSSOP (PW)
SOIC (DW)
−40°C
−40
C to 85
85°C
C
ORDERABLE
PART NUMBER
PACKAGE†
TA
SSOP (DB)
TSSOP (PW)
Tube of 25
SN75C3222DW
Reel of 2000
SN75C3222DWR
Reel of 2000
SN75C3222DBR
Tube of 70
SN75C3222PW
Reel of 2000
SN75C3222PWR
Tube of 25
SN65C3222DW
Reel of 2000
SN65C3222DWR
Reel of 2000
SN65C3222DBR
Tube of 70
SN65C3222PW
Reel of 2000
SN65C3222PWR
TOP-SIDE
MARKING
75C3222
CA3222
CA3222
65C3222
CB3222
CB3222
† Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are
available at www.ti.com/sc/package.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Copyright 2004, Texas Instruments Incorporated
!"#$ % &'!!($ #% )'*+$ ,#$(
!,'&$% &!" $ %)(&$% )(! $-( $(!"% (.#% %$!'"($%
%$#,#!, /#!!#$0 !,'&$ )!&(%%1 ,(% $ (&(%%#!+0 &+',(
$(%$1 #++ )#!#"($(!%
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
1
SLLS534B − MAY 2002 − REVISED OCTOBER 2004
Function Tables
EACH DRIVER
INPUTS
DIN
OUTPUT
DOUT
PWRDOWN
X
L
Z
L
H
H
H
H
L
H = high level, L = low level, X = irrelevant,
Z = high impedance
EACH RECEIVER
INPUTS
RIN
EN
OUTPUT
ROUT
H
L
L
H
L
L
X
H
Z
Open
L
H
H = high level, L = low level, X = irrelevant,
Z = high impedance (off), Open = input
disconnected or connected driver off
logic diagram (positive logic)
DIN1
DIN2
PWRDOWN
EN
ROUT1
ROUT2
2
13
17
12
8
20
DOUT1
DOUT2
Powerdown
1
15
16
10
9
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
RIN1
RIN2
SLLS534B − MAY 2002 − REVISED OCTOBER 2004
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)†
Supply voltage range, VCC (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.3 V to 6 V
Positive output supply voltage range, V+ (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.3 V to 7 V
Negative output supply voltage range, V− (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3 V to −7 V
Supply voltage difference, V+ − V− (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 V
Input voltage range, VI: Drivers, EN, PWRDOWN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.3 V to 6 V
Receivers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −25 V to 25 V
Output voltage range, VO: Drivers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −13.2 V to 13.2 V
Receivers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.3 V to VCC + 0.3 V
Package thermal impedance, θJA (see Notes 2 and 3): DB package . . . . . . . . . . . . . . . . . . . . . . . . . . . 70°C/W
DW package . . . . . . . . . . . . . . . . . . . . . . . . . . 58°C/W
PW package . . . . . . . . . . . . . . . . . . . . . . . . . . 83°C/W
Operating virtual junction temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65°C to 150°C
† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. All voltages are with respect to network GND.
2. Maximum power dissipation is a function of TJ(max), θJA, and TA. The maximum allowable power dissipation at any allowable
ambient temperature is PD = (TJ(max) − TA)/θJA. Operating at the absolute maximum TJ of 150°C can affect reliability.
3. The package thermal impedance is calculated in accordance with JESD 51-7.
recommended operating conditions (see Note 4 and Figure 5)
Supply voltage
VCC = 3.3 V
VCC = 5 V
VIH
Driver and control high-level input voltage
DIN, EN, PWRDOWN
VIL
VI
Driver and control low-level input voltage
DIN, EN, PWRDOWN
Driver and control input voltage
DIN, EN, PWRDOWN
VI
Receiver input voltage
TA
Operating free-air temperature
VCC = 3.3 V
VCC = 5 V
MIN
NOM
MAX
3
3.3
3.6
4.5
5
5.5
UNIT
V
2
V
2.4
0.8
V
0
5.5
V
V
−25
25
SN65C3222
−40
85
SN75C3222
0
70
°C
NOTE 4: Test conditions are C1−C4 = 0.1 µF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 µF, C2−C4 = 0.33 µF at VCC = 5 V ± 0.5 V.
electrical characteristics over recommended ranges of supply voltage and operating free-air
temperature (unless otherwise noted) (see Note 4 and Figure 5)
PARAMETER
II
ICC
TEST CONDITIONS
Input leakage current (EN, PWRDOWN)
MIN
TYP‡
MAX
±0.01
±1
µA
UNIT
Supply current
No load, PWRDOWN at VCC
0.3
1
mA
Supply current (powered off)
No load, PWRDOWN at GND
1
10
µA
‡ All typical values are at VCC = 3.3 V or VCC = 5 V, and TA = 25°C.
NOTE 4: Test conditions are C1−C4 = 0.1 µF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 µF, C2−C4 = 0.33 µF at VCC = 5 V ± 0.5 V.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
3
SLLS534B − MAY 2002 − REVISED OCTOBER 2004
DRIVER SECTION
electrical characteristics over recommended ranges of supply voltage and operating free-air
temperature (unless otherwise noted) (see Note 4 and Figure 5)
PARAMETER
TEST CONDITIONS
MIN
TYP†
VOH
VOL
High-level output voltage
DOUT at RL = 3 kΩ to GND, DIN = GND
5
5.4
Low-level output voltage
DOUT at RL = 3 kΩ to GND, DIN = VCC
−5
−5.4
IIH
IIL
High-level input current
VI = VCC
VI at GND
Low-level input current
±0.01
IOS
Short-circuit output current‡
VCC = 3.6 V,
VCC = 5.5 V,
ro
Output resistance
VCC, V+, and V− = 0 V,
Ioff
Output leakage current
PWRDOWN = GND
VO = 0 V
VO = 0 V
VO = ±2 V
300
MAX
UNIT
V
V
±1
µA
±0.01
±1
µA
±35
±60
±35
±90
mA
Ω
10M
VO = ±12 V,
VCC = 3 V to 3.6 V
±25
VO = ±10 V,
VCC = 4.5 V to 5.5 V
±25
µA
† All typical values are at VCC = 3.3 V or VCC = 5 V, and TA = 25°C.
‡ Short-circuit durations should be controlled to prevent exceeding the device absolute power-dissipation ratings, and not more than one output
should be shorted at a time.
NOTE 4: Test conditions are C1−C4 = 0.1 µF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 µF, C2−C4 = 0.33 µF at VCC = 5 V ± 0.5 V.
switching characteristics over recommended ranges of supply voltage and operating free-air
temperature (unless otherwise noted) (see Note 4 and Figure 4)
PARAMETER
Maximum data rate
(see Figure 1)
TEST CONDITIONS
RL = 3 kΩ,
kΩ
One DOUT switching
MIN
CL = 1000 pF
CL = 250 pF,
CL = 1000 pF,
TYP†
VCC = 3 V to 4.5 V
VCC = 4.5 V to 5.5 V
tsk(p)
Pulse skew§
CL = 150 pF to 2500 pF
RL = 3 kΩ to 7 kΩ,
See Figure 2
SR(tr)
Slew rate,
transition region
(see Figure 1)
RL = 3 kΩ to 7 kΩ,
VCC = 3.3 V
CL = 150 pF to 1000 pF
1000
POST OFFICE BOX 655303
UNIT
kbit/s
1000
300
18
† All typical values are at VCC = 3.3 V or VCC = 5 V, and TA = 25°C.
§ Pulse skew is defined as |tPLH − tPHL| of each channel of the same device.
NOTE 4: Test conditions are C1−C4 = 0.1 µF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 µF, C2−C4 = 0.33 µF at VCC = 5 V ± 0.5 V.
4
MAX
250
• DALLAS, TEXAS 75265
ns
150
V/µs
SLLS534B − MAY 2002 − REVISED OCTOBER 2004
RECEIVER SECTION
electrical characteristics over recommended ranges of supply voltage and operating free-air
temperature (unless otherwise noted) (see Note 4 and Figure 5)
PARAMETER
VOH
VOL
MIN
TYP†
VCC − 0.6 V
VCC − 0.1 V
TEST CONDITIONS
High-level output voltage
IOH = −1 mA
IOL = 1.6 mA
Low-level output voltage
VIT+
Positive-going input threshold voltage
VCC = 3.3 V
VCC = 5 V
VIT−
Negative-going input threshold voltage
VCC = 3.3 V
VCC = 5 V
Vhys
Ioff
Input hysteresis (VIT+ − VIT−)
MAX
V
0.4
1.5
2.4
1.8
2.4
0.6
1.2
0.8
1.5
±0.05
EN = VCC
ri
Input resistance
VI = ±3 V to ±25 V
3
5
† All typical values are at VCC = 3.3 V or VCC = 5 V, and TA = 25°C.
NOTE 4: Test conditions are C1−C4 = 0.1 µF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 µF, C2−C4 = 0.33 µF at VCC = 5 V ± 0.5 V.
V
V
V
0.3
Output leakage current
UNIT
V
±10
µA
7
kΩ
switching characteristics over recommended ranges of supply voltage and operating free-air
temperature (unless otherwise noted) (see Note 4)
PARAMETER
TEST CONDITIONS
MIN
TYP†
MAX
UNIT
tPLH
tPHL
Propagation delay time, low- to high-level output
CL = 150 pF, See Figure 3
300
ns
Propagation delay time, high- to low-level output
CL= 150 pF, See Figure 3
300
ns
ten
Output enable time
CL= 150 pF, RL = 3 kΩ,
See Figure 4
200
ns
tdis
Output disable time
CL= 150 pF, RL = 3 kΩ,
See Figure 4
200
ns
tsk(p) Pulse skew‡
See Figure 3
300
† All typical values are at VCC = 3.3 V or VCC = 5 V, and TA = 25°C.
‡ Pulse skew is defined as |tPLH − tPHL| of each channel of the same device.
NOTE 4: Test conditions are C1−C4 = 0.1 µF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 µF, C2−C4 = 0.33 µF at VCC = 5 V ± 0.5 V.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
ns
5
SLLS534B − MAY 2002 − REVISED OCTOBER 2004
PARAMETER MEASUREMENT INFORMATION
3V
Input
Generator
(see Note B)
1.5 V
RS-232
Output
50 Ω
RL
1.5 V
0V
CL
(see Note A)
3V
PWRDOWN
tTHL
tTLH
VOH
3V
3V
Output
−3 V
−3 V
VOL
TEST CIRCUIT
VOLTAGE WAVEFORMS
SR(tr) +
t
THL
6V
or t
TLH
NOTES: A. CL includes probe and jig capacitance.
B. The pulse generator has the following characteristics: PRR = 250 kbit/s, ZO = 50 Ω, 50% duty cycle, tr ≤ 10 ns, tf ≤ 10 ns.
Figure 1. Driver Slew Rate
3V
Generator
(see Note B)
RS-232
Output
50 Ω
RL
Input
1.5 V
1.5 V
0V
CL
(see Note A)
tPHL
tPLH
VOH
3V
PWRDOWN
50%
50%
Output
VOL
TEST CIRCUIT
VOLTAGE WAVEFORMS
NOTES: A. CL includes probe and jig capacitance.
B. The pulse generator has the following characteristics: PRR = 250 kbit/s, ZO = 50 Ω, 50% duty cycle, tr ≤ 10 ns, tf ≤ 10 ns.
Figure 2. Driver Pulse Skew
EN
0V
3V
Input
1.5 V
1.5 V
−3 V
Output
Generator
(see Note B)
50 Ω
tPHL
CL
(see Note A)
tPLH
VOH
50%
Output
50%
VOL
TEST CIRCUIT
VOLTAGE WAVEFORMS
NOTES: A. CL includes probe and jig capacitance.
B. The pulse generator has the following characteristics: ZO = 50 Ω, 50% duty cycle, tr ≤ 10 ns, tf ≤ 10 ns.
Figure 3. Receiver Propagation-Delay Times
6
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
SLLS534B − MAY 2002 − REVISED OCTOBER 2004
PARAMETER MEASUREMENT INFORMATION
VCC
S1
GND
RL
Output
3 V or 0 V
CL
(see Note A)
EN
3V
Input
1.5 V
−3 V
tPZH
(S1 at GND)
tPHZ
S1 at GND)
VOH
Output
50%
0.3 V
Generator
(see Note B)
1.5 V
50 Ω
tPLZ
(S1 at VCC)
0.3 V
Output
50%
VOL
tPZL
(S1 at VCC)
TEST CIRCUIT
VOLTAGE WAVEFORMS
NOTES: A. CL includes probe and jig capacitance.
B. The pulse generator has the following characteristics: ZO = 50 Ω, 50% duty cycle, tr ≤ 10 ns, tf ≤ 10 ns.
Figure 4. Receiver Enable and Disable Times
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
7
SLLS534B − MAY 2002 − REVISED OCTOBER 2004
APPLICATION INFORMATION
1
EN
2
20
Powerdown
VCC
C1+
PWRDOWN
19
+ C
BYPASS = 0.1 µF
+
C1
−
3
+
V+
GND
18
−
C3†
−
4
5
17
C1−
16
C2+
DOUT1
RIN1
+
C2
−
6
7
C4
DOUT2
RIN2
ROUT2
−
15
C2−
14
V−
ROUT1
NC
+
8
13
9
12
10
11
DIN1
DIN2
NC
† C3 can be connected to VCC or GND.
NOTES: A. Resistor values shown are nominal.
B. NC − No internal connection
VCC vs CAPACITOR VALUES
VCC
3.3 V " 0.3 V
C1
0.1 µF
C2, C3, and C4
0.1 µF
5 V " 0.5 V
0.047 µF
0.33 µF
3 V to 5.5 V
0.1 µF
0.47 µF
Figure 5. Typical Operating Circuit and Capacitor Values
8
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
PACKAGE OPTION ADDENDUM
www.ti.com
14-Oct-2022
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
SN65C3222DBR
ACTIVE
SSOP
DB
20
2000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
CB3222
Samples
SN65C3222DWR
ACTIVE
SOIC
DW
20
2000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
65C3222
Samples
SN65C3222PW
ACTIVE
TSSOP
PW
20
70
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
CB3222
Samples
SN75C3222DW
ACTIVE
SOIC
DW
20
25
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
0 to 70
75C3222
Samples
SN75C3222DWR
ACTIVE
SOIC
DW
20
2000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
0 to 70
75C3222
Samples
SN75C3222PW
ACTIVE
TSSOP
PW
20
70
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
0 to 70
CA3222
Samples
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of