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SN65HVD485E
SLLS612E – JUNE 2004 – REVISED DECEMBER 2015
SN65HVD485E Half-Duplex RS-485 Transceiver
1 Features
3 Description
•
•
•
•
The SN65HVD485E device is a half-duplex
transceiver designed for RS-485 data bus networks.
Powered by a 5-V supply, it is fully compliant with the
TIA/EIA-485A standard. This device is suitable for
data transmission up to 10 Mbps over long twistedpair cables and is designed to operate with very low
supply current, typically less than 2 mA, exclusive of
the load. When the device is in the inactive shutdown
mode, the supply current drops below 1 mA.
1
•
•
•
Bus-Pin ESD Protection up to 15 kV
1/2 Unit Load: up to 64 Nodes on a Bus
Bus-Open-Failsafe Receiver
Glitch-Free Power-Up and Power-Down Bus
Inputs and Outputs
Available in Small VSSOP-8 Package
Meets or Exceeds the Requirements of the
TIA/EIA-485A Standard
Industry-Standard SN75176 Footprint
2 Applications
•
•
•
•
•
•
•
Motor Control
Power Inverters
Industrial Automation
Building Automation Networks
Industrial Process Control
Battery-Powered Applications
Telecommunications Equipment
The wide common-mode range and high ESD
protection levels of this device make it suitable for
demanding applications such as: electrical inverters,
status/command signals across telecom racks,
cabled chassis interconnects, and industrial
automation networks where noise tolerance is
essential. The SN65HVD485E device matches the
industry-standard footprint of the SN75176 device.
Power-on reset circuits keep the outputs in a highimpedance state until the supply voltage has
stabilized. A thermal-shutdown function protects the
device from damage due to system-fault conditions.
The SN65HVD485E device is characterized for
operation from –40°C to 85°C air temperature.
Device Information(1)
PART NUMBER
PACKAGE
SN65HVD485E
BODY SIZE (NOM)
SOIC (8)
4.91 mm × 3.90 mm
VSSOP (8)
3.00 mm × 3.00 mm
PDIP (8)
9.81 mm × 6.35 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Typical Application Schematic
R
R
RE
B
DE
D
R
A
R
A
RT
RT
D
A
R
B
A
D
R RE DE D
R
RE
B
DE
D
B
D
D
R RE DE D
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
SN65HVD485E
SLLS612E – JUNE 2004 – REVISED DECEMBER 2015
www.ti.com
Table of Contents
1
2
3
4
5
6
7
8
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Device Comparison Table.....................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
3
4
7.1
7.2
7.3
7.4
7.5
7.6
7.7
7.8
7.9
7.10
7.11
7.12
4
4
4
5
5
5
6
6
6
6
7
7
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions ......................
Thermal Information ..................................................
Electrical Characteristics: Driver ...............................
Electrical Characteristics: Receiver ..........................
Power Dissipation Characteristics ............................
Supply Current ..........................................................
Switching Characteristics: Driver ..............................
Switching Characteristics: Receiver........................
Dissipation Ratings .................................................
Typical Characteristics ............................................
Parameter Measurement Information .................. 8
9
Detailed Description ............................................ 12
9.1
9.2
9.3
9.4
Overview .................................................................
Functional Block Diagram .......................................
Feature Description.................................................
Device Functional Modes........................................
12
12
12
12
10 Application and Implementation........................ 14
10.1 Application Information.......................................... 14
10.2 Typical Application ............................................... 14
11 Power Supply Recommendations ..................... 18
12 Layout................................................................... 18
12.1 Layout Guidelines ................................................. 18
12.2 Layout Example .................................................... 18
13 Device and Documentation Support ................. 19
13.1
13.2
13.3
13.4
13.5
13.6
Device Support......................................................
Documentation Support ........................................
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
19
20
20
20
20
20
14 Mechanical, Packaging, and Orderable
Information ........................................................... 20
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision D (July 2015) to Revision E
•
Page
Changed 3.3 V To: 5 V at pin VCC in Figure 20 ................................................................................................................... 16
Changes from Revision C (March 2007) to Revision D
Page
•
Added Pin Configuration and Functions section, Feature Description section, Device Functional Modes, Application
and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation
Support section, and Mechanical, Packaging, and Orderable Information section ............................................................... 1
•
Deleted Ordering Information table ....................................................................................................................................... 1
•
Changed Thermal Information table ...................................................................................................................................... 5
•
Added Power Dissipation Characteristics table...................................................................................................................... 6
2
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SLLS612E – JUNE 2004 – REVISED DECEMBER 2015
5 Device Comparison Table
Improved Replacement for Devices
PART NUMBER
REPLACE WITH
BENEFITS
ADM485
SN65HVD485E
Better ESD protection (±15 kV versus unspecified)
Faster signaling rate (10 Mbps versus 5 Mbps)
More nodes on a bus (64 versus 32) Wider power supply tolerance (10% vs 5%)
SP485E
SN65HVD485E
More nodes on a bus (64 versus 32)
Wider power supply tolerance (10% versus 5%)
LMS485E
SN65HVD485E
Higher signaling rate (10 Mbps versus 2.5 Mbps)
More nodes on a bus (64 versus 32)
Wider power supply tolerance (10% versus 5%)
DS485
SN65HVD485E
Higher signaling rate (10 Mbps versus 2.5 Mbps)
Better ESD (±15 kV versus ±2 kV)
More nodes on a bus (64 versus 32)
Wider power supply tolerance (10% versus 5%)
LTC485
SN65HVD485E
Better ESD (±15 kV versus ±2 kV)
Wider power supply tolerance (10% versus 5%)
MAX485E
SN65HVD485E
Higher signaling rate (10 Mbps versus 2.5 Mbps)
More nodes on a bus (64 versus 32)
Wider power supply tolerance (10% versus 5%)
ST485E
SN65HVD485E
Higher signaling rate (10 Mbps versus 5 Mbps)
Wider power supply tolerance (10% versus 5%)
ISL8485E
SN65HVD485E
More nodes on a bus (64 versus 32)
Faster signaling rate (10 Mbps versus 5 Mbps)
6 Pin Configuration and Functions
D, DGK, P Packages
8-Pin SOIC, VSSOP, PDIP
Top View
R
RE
DE
D
1
8
2
7
3
6
4
5
VCC
B
A
GND
Pin Functions
PIN
NAME
NO.
TYPE
DESCRIPTION
A
6
Bus input/output
Driver output or receiver input (complementary to B)
B
7
Bus input/output
Driver output or receiver input (complementary to A)
D
4
Digital input
Driver data input
DE
3
Digital input
Driver enable, active high
GND
5
Reference potential
Local device ground
R
1
Digital input
Receive data output
RE
2
Digital input
Receiver enable, active low
VCC
8
Supply
4.5-V to 5.5-V supply
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7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
VCC
(1) (2)
Supply voltage
Voltage range at A or B
TJ
(1)
(2)
MAX
UNIT
7
V
V
–9
14
Voltage range at any logic pin
–0.3
VCC + 0.3
V
Receiver output current
–24
24
mA
Voltage input range, transient pulse, A and B, through 100 Ω (see Figure 15)
–50
50
V
Junction temperature
170
170
°C
Continuous total power dissipation
Tstg
MIN
–0.5
Refer to Dissipation Ratings
Storage temperature
–65
130
°C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltage values, except differential I/O bus voltages, are with respect to network ground terminal.
7.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic
discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS001 (1)
Bus pins and GND
±15000
All pins
±4000
Charged-device model (CDM), per JEDEC specification JESD22-C101 (2)
UNIT
V
±1000
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted) (1)
MIN
NOM
MAX
UNIT
VCC
Supply voltage
4.5
5.5
V
VI
Input voltage at any bus terminal (separately or common mode)
–7
12
V
VIH
High-level input voltage (D, DE, or RE inputs)
2
VCC
V
VIL
Low-level input voltage (D, DE, or RE inputs)
VID
Differential input voltage
Driver
IO
Output current
RL
Differential load resistance
1/tUI
Signaling rate
TA
Operating free-air temperature
TJ
(1)
(2)
4
Junction temperature
Receiver
0
0.8
V
–12
12
V
–60
60
–8
8
54
(2)
mA
Ω
60
0
10
Mbps
–40
85
°C
–40
130
°C
The algebraic convention, in which the least positive (most negative) limit is designated as minimum, is used in this data sheet.
See Thermal Information for information on maintenance of this specification for the DGK package.
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7.4 Thermal Information
SN65HVD485E
THERMAL METRIC
(1)
D
(SOIC)
DGK
(VSSOP)
P
(PDIP)
8 PINS
UNIT
8 PINS
8 PINS
RθJA
Junction-to-ambient thermal resistance
(2)
127
180
153
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
51.4
66
40.5
°C/W
RθJB
Junction-to-board thermal resistance
47.6
108
28.5
°C/W
ψJT
Junction-to-top characterization parameter
7.9
4.6
17.6
°C/W
ψJB
Junction-to-board characterization parameter
47
73.1
28.3
°C/W
(1)
(2)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report (SPRA953).
See the Package Thermal Characterization Methodologies application note (SZZA003) for an explanation of this parameter.
7.5 Electrical Characteristics: Driver
over recommended operating conditions (unless otherwise noted)
PARAMETER
TEST CONDITIONS
IO = 0, No load
|VOD|
Differential output voltage
MIN TYP (1)
3
4.3
RL = 54 W (see Figure 3)
1.5
2.3
VTEST = –7 V to 12 V (see Figure 4)
1.5
MAX
UNIT
V
Δ|VOD|
Change in magnitude of differential output
voltage
See Figure 3 and Figure 4
VOC(SS)
Steady-state common-mode output voltage
See Figure 5
ΔVOC(SS)
Change in steady-state common-mode output
voltage
VOC(PP)
Common-mode output voltage
See Figure 5
IOZ
High-impedance output current
See receiver input currents
II
Input current
D, DE
–100
100
μA
IOS
Short-circuit output current
–7 V ≤ VO ≤ 12 V (see Figure 9)
–250
250
mA
MIN TYP (1)
MAX
UNIT
–85
–10
mV
(1)
–0.2
0
0.2
V
1
2.6
3
V
–0.1
0
0.1
V
500
mV
μA
All typical values are at 25°C and with a 5-V supply.
7.6 Electrical Characteristics: Receiver
over recommended operating conditions (unless otherwise noted)
PARAMETER
TEST CONDITIONS
VIT+
Positive-going input threshold voltage
IO = –8 mA
VIT–
Negative-going input threshold voltage
IO = 8 mA
Vhys
Hysteresis voltage (VIT+ – VIT–)
VOH
High-level output voltage
VID = 200 mV, IOH = –8 mA (see Figure 10)
VOL
Low-level output voltage
VID = –200 mV, IOH = 8 mA (see Figure 10)
IOZ
High-impedance-state output current
VO = 0 to VCC, RE = VCC
–200
4
–115
mV
30
mV
4.6
0.15
–1
VIH = 12 V, VCC = 5 V
II
Bus input current
IIH
High-level input current (RE)
IIL
Cdiff
(1)
V
0.4
V
1
μA
0.5
VIH = 12 V, VCC = 0
0.5
mA
VIH = –7 V, VCC = 5 V
–0.4
VIH = –7 V, VCC = 0
–0.4
VIH = 2 V
–60
–30
μA
Low-level input current (RE)
VIL = 0.8 V
–60
–30
μA
Differential input capacitance
VI = 0.4 sin (4E6πt) + 0.5 V, DE at 0 V
7
pF
All typical values are at 25°C and with a 5-V supply.
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7.7 Power Dissipation Characteristics
PARAMETER
TEST CONDITIONS
P(AVG)
Average power dissipation
TSD
Thermal shut-down junction
temperature
MIN
TYP
RL = 54 Ω, Input to D is a 10 Mbps 50% duty cycle square
wave VCC at 5.5 V, TJ = 130°C
MAX
UNIT
219
mW
165
°C
7.8 Supply Current
over recommended operating conditions (unless otherwise noted)
PARAMETER
ICC
(1)
TEST CONDITIONS
MIN
TYP (1)
MAX
UNIT
Driver and receiver enabled D at VCC or open or 0 V,
DE at VCC, RE at 0 V, No load
2
mA
Driver and receiver
disabled
DE at 0 V, RE at VCC
1
mA
D at VCC or open,
All typical values are at 25°C and with a 5-V supply.
7.9 Switching Characteristics: Driver
over recommended operating conditions (unless otherwise noted)
PARAMETER
TEST CONDITIONS
tPLH
Propagation delay time, low-to-high-level output
tPHL
Propagation delay time, high-to-low-level output
tr
Differential output signal rise time
tf
Differential output signal fall time
tsk(p)
Pulse skew (|tPHL – tPLH|)
tPZH
Propagation delay time, high-impedance-to-high-level
output
MIN
TYP MAX
RL = 54 Ω, CL = 50 pF (see Figure 6)
tPHZ
Propagation delay time, high-level-to-high-impedance
output
tPZL
Propagation delay time, high-impedance-to-low-level
output
UNIT
30
ns
30
ns
25
ns
25
ns
5
ns
150
ns
100
ns
150
ns
100
ns
RL = 110 Ω, RE at 0 V (see Figure 7)
RL = 110 Ω, RE at 0 V (see Figure 8)
tPLZ
Propagation delay time, low-level-to-high-impedance
output
tPZH(SHN)
Propagation delay time, shutdown-to-high-level
output
RL = 110 Ω, RE at VCC (see Figure 7)
2600
ns
tPZL(SHDN)
Propagation delay time, shutdown-to-low-level output RL = 110 Ω, RE at VCC (see Figure 8)
2600
ns
7.10 Switching Characteristics: Receiver
over recommended operating conditions (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP MAX
UNIT
tPLH
Propagation delay time, low-to-high-level output
200
ns
tPHL
Propagation delay time, high-to-low-level output
200
ns
tsk(p)
Pulse skew (|tPHL – tPLH|)
tr
Output signal rise time
3
ns
tf
Output signal fall time
3
ns
tPZH
Output enable time to high level
50
ns
tPZL
Output enable time to low level
50
ns
tPHZ
Output enable time from high level
50
ns
tPLZ
Output enable time from low level
50
ns
tPZH(SHDN)
Propagation delay time, shutdown-to-high-level
output
3500
ns
tPZL(SHDN)
Propagation delay time, shutdown-to-low-level
output
3500
ns
6
VID = -1.5 V to 1.5 V, CL = 15 pF
(see Figure 11)
CL = 15 pF, DE at 3 V,
(see Figure 12 and Figure 13)
CL = 15 pF, DE at 0 V,
(see Figure 14)
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7.11 Dissipation Ratings
PACKAGE (1)
JEDEC BOARD
MODEL
TA < 25°C
POWER RATING
DERATING FACTOR (2)
ABOVE TA = 25°C
TA = 70°C
POWER RATING
TA = 85°C
POWER RATING
D
(SIOC)
Low k (3)
507 mW
4.82 mW/°C
289 mW
217 mW
High k (3)
824 mW
7.85 mW/°C
471 mW
353 mW
Low k (3)
686 mW
6.53 mW/°C
392 mW
294 mW
(3)
394 mW
3.76 mW/°C
255 mW
169 mW
(4)
583 mW
5.55 mW/°C
333 mW
250 mW
P
(PDIP)
Low k
DGK
(VSSOP)
(1)
(2)
(3)
(4)
High k
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
website at www.ti.com.
This is the inverse of the junction-to-ambient thermal resistance when board-mounted and with no air flow.
In accordance with the low-k thermal metric definitions of EIA/JESD51-3.
In accordance with the high-k thermal metric definitions of EIA/JESDS1-7.
7.12 Typical Characteristics
80
5
VOD − Differential Output Voltage − V
60
II − Input Bias Current − µA
TA = 25°C
VCC = 5 V
4.5
40
VCC = 0 V
20
0
VCC = 5 V
−20
−40
RL = 120Ω
4
3.5
3
RL = 60Ω
2.5
2
1.5
1
0.5
−60
−8
−6
−4
−2 0
2
4
6
VI − Bus Input Voltage − V
8
10
Figure 1. Bus Input Current vs Bus Input Voltage
12
0
0
10
20
30
40
IO − Differential Output Current − mA
50
Figure 2. Driver Differential Output Voltage
vs Differential Output Current
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8 Parameter Measurement Information
Test load capacitance includes probe and jig capacitance (unless otherwise specified). Signal generator
characteristics: rise time and fall time