SN65HVD63RGTT

SN65HVD63RGTT

  • 厂商:

    BURR-BROWN(德州仪器)

  • 封装:

    VQFN-16_3X3MM-EP

  • 描述:

    开关键控同轴调制解调器收发器

  • 详情介绍
  • 数据手册
  • 价格&库存
SN65HVD63RGTT 数据手册
Sample & Buy Product Folder Tools & Software Technical Documents Support & Community SN65HVD63 ZHCSE43 – JULY 2015 SN65HVD63 AISG® 开关键控同轴调制解调器收发器 1 特性 • • • 1 • • • • • • • 3 说明 3V 至 5.5V 电源范围 1.6V 至 5.5V 独立逻辑电源 –15dBm 至 +5dBm 接收器 宽输入动态范围 可在 0dBm 至 6dBm 范围内调节 驱动器为同轴电缆提供的功率 AISG® 符合 V2.0 的输出辐射配置文件 同时符合即将推行的 AISG V3.0 规范 低功耗待机模式 针对 RS-485 总线仲裁的 方向控制输出 支持最高达 115kbps 的信号传输速率 集成有源带通滤波器的中心频率 为 2.176MHz 16 引脚 3mm × 3mm 超薄型四方扁平无引线 (VQFN) 封装 SN65HVD63 收发器对逻辑(基带)接口和适用于长 同轴介质的频率之间的信号进行调制和解调,以便无线 设备之间进行有线数据传输。 SN65HVD63 器件是一款集成 AISG 收发器,旨在满 足即将推行的“天线接口标准组织 v3.0 规范”的要求。 SN65HVD63 接收器集成了一个有源带通滤波器,这 样即使存在寄生频率组件仍然能够解调信号。 该滤波 器的中心频率为 2.176MHz。 发送器支持在 +0dBm 至 6dBm 的范围内调节为 50Ω 同轴电缆提供的输出功率。 SN65HVD63 发送器符合 AISG 标准针对发射频谱的要求。 该器件提供的方向控制输出使得对 RS-485 接口的总线 仲裁更加便捷。 该器件为晶振集成了一个振荡器输 入,并且接受到振荡器的标准时钟输入。 2 应用 • • • 器件信息(1) AISG - 针对天线线路器件的接口 塔顶放大器 (TMA) 普通调制解调器 (Modem) 接口 器件型号 SN65HVD63 封装 封装尺寸(标称值) VQFN (16) 3.00mm x 3.00mm (1) 要了解所有可用封装,请见数据表末尾的可订购产品附录。 框图 VL VCC 3 13 1 9 XTAL1 14 XTAL2 15 SYNCOUT RES FILTER XTAL Buffer OOK MOD OUTPUT STAGE PREAMP 12 TXOUT 2.176–MHz TXIN DIRSET1 DIRSET2 DIR RXOUT 2 7 6 Control Logic FILTER 5 OOK DEMOD 4 Buffer 11 Buffer RXIN 2.176–MHz COMP RECEIVER THRESHOLD 16 8 10 GND GND BIAS 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. English Data Sheet: SLLSEO3 SN65HVD63 ZHCSE43 – JULY 2015 www.ti.com.cn 目录 1 2 3 4 5 6 7 8 9 特性 .......................................................................... 应用 .......................................................................... 说明 .......................................................................... 修订历史记录 ........................................................... Device Comparison Table..................................... Pin Configuration and Functions ......................... Specifications......................................................... 1 1 1 2 3 3 4 7.1 7.2 7.3 7.4 7.5 7.6 7.7 4 4 4 4 6 7 8 Absolute Maximum Ratings ..................................... ESD Ratings.............................................................. Recommended Operating Conditions....................... Thermal Information .................................................. Electrical Characteristics........................................... Switching Characteristics .......................................... Typical Characteristics .............................................. 9.2 Functional Block Diagram ....................................... 12 9.3 Feature Description................................................. 12 9.4 Device Functional Modes........................................ 13 10 Application and Implementation........................ 15 10.1 Application Information.......................................... 15 10.2 Typical Application ............................................... 16 11 Power Supply Recommendations ..................... 18 12 Layout................................................................... 18 12.1 Layout Guidelines ................................................. 18 12.2 Layout Example .................................................... 18 13 器件和文档支持 ..................................................... 19 13.1 13.2 13.3 13.4 13.5 Parameter Measurement Information ................ 11 Detailed Description ............................................ 12 相关文档  ........................................................... 社区资源................................................................ 商标 ....................................................................... 静电放电警告......................................................... Glossary ................................................................ 19 19 19 19 19 14 机械、封装和可订购信息 ....................................... 19 9.1 Overview ................................................................. 12 4 修订历史记录 2 日期 修订版本 注释 2015 年 7 月 * 首次发布。 Copyright © 2015, Texas Instruments Incorporated SN65HVD63 www.ti.com.cn ZHCSE43 – JULY 2015 5 Device Comparison Table PART NUMBER STANDARD SUPPORTED SN65HVD62 AISG 2.0 SN65HVD63 SPURIOUS FREQUENCY RANGE MAXIMUM LEVEL ≤ 1.1 MHz 2 dBm (793 mVPP) AISG 3.0 ≤ 4.17 MHz 2 dBm (793 mVPP) ≤ 1.35 MHz –13 dBm (142 mVPP) ≤ 3.5 MHz –13 dBm (142 mVPP) 6 Pin Configuration and Functions VCC 13 XTAL1 14 TXOUT RXIN BIAS RES 12 11 10 9 RGT Package 16-Pin VQFN With Exposed Thermal Pad Top View 8 GND 7 DIRSET1 Exposed Pad 5 DIR RXOUT SYNCOUT 4 16 3 GND VL DIRSET2 2 6 TXIN 15 1 XTAL2 Pin Functions PIN NAME DESCRIPTION NO. TYPE BIAS 10 O Bias voltage output for setting driver output power by external resistors DIR 5 O Direction control output signal for bus arbitration DIRSET1 7 — DIRSET2 6 — DIRSET1 and DIRSET2: Bits to set the duration of DIR DIRSET[2:1]: [L:L] = 9.6 kbps; [L:H] = 38.4 kbps; [H:L] = 115 kbps; [H:H] = standby mode — Ground GND 8 16 RES 9 P Input voltage to adjust driver output power that is set by external resistors from BIAS pin to GND RXIN 11 I Modulated input signal to the receiver RXOUT 4 O Digital data bit stream from receiver SYNCOUT 1 O Open-drain output to synchronize other devices to the 4x-carrier oscillator at XTAL1 and XTAL2 TXIN 2 I Digital data bit stream to driver TXOUT 12 O Modulated output signal from the driver VCC 13 P Analog supply voltage for the device VL 3 P Logic supply voltage for the device XTAL1 14 I/O XTAL2 15 I/O pins of the crystal oscillator. Connect a 4 × fC crystal between these pins or connect XTAL1 to an 8.704-MHz clock and connect XTAL2 to GND. EP — — Exposed pad. Connection to ground plane is recommended for best thermal conduction. Copyright © 2015, Texas Instruments Incorporated 3 SN65HVD63 ZHCSE43 – JULY 2015 www.ti.com.cn 7 Specifications 7.1 Absolute Maximum Ratings (1) MIN MAX UNIT Supply voltage, VCC and VL –0.5 6 V Voltage at coax pins –0.5 6 V Voltage at logic pins –0.3 VVL + 0.3 V Logic output current –20 20 mA TXOUT output current Internally limited SYNCOUT output current Internally limited Junction temperature, TJ 170 Continuous total power dissipation Storage temperature, Tstg (2) (1) (2) °C See the Thermal Information –65 °C 150 °C Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. Applicable before the device is installed in the final product. 7.2 ESD Ratings V(ESD) (1) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) VALUE UNIT ±2000 V JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. 7.3 Recommended Operating Conditions MIN VCC Analog supply voltage VL Logic supply voltage VI(pp) Input signal amplitude at RXIN VIH High-level input voltage VIL Low-level input voltage 1/tUI Data signaling rate FOSC Oscillator frequency TXIN, DIRSET1, DIRSET2 NOM MAX 5.5 V 1.6 5.5 V 1.12 Vpp 70%VL VL 70%VCC VCC TXIN, DIRSET1, DIRSET2 0 30%VL XTAL1, XTAL2 0 30%VCC XTAL1, XTAL2 UNIT 3 9.6 –30 ppm 8.704 V V 115 kbps 30 ppm MHz Ω Load impedance between TXOUT to RXIN 50 Load impedance between RXIN and GND at fC (channel) 50 Ω R1 Bias resistor between BIAS and RES 4.1 kΩ R2 Bias resistor between RES and GND 10 kΩ RSYNC Pullup resistor between SYNCOUT and VCC VRES Voltage at RES pin CC Coupling capacitance between RXIN and coax (channel) CBIAS Capacitance between BIAS and GND TA Operating free-air temperature –40 105 °C TJ Junction temperature –40 125 °C ZLOAD 1 0.7 kΩ 1.5 220 V nF 1 µF 7.4 Thermal Information THERMAL METRIC (1) RθJA (1) 4 Junction-to-ambient thermal resistance VQFN RGT16 Pins 49.4 UNIT °C/W For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. 版权 © 2015, Texas Instruments Incorporated SN65HVD63 www.ti.com.cn ZHCSE43 – JULY 2015 Thermal Information (接 接下页) THERMAL METRIC (1) VQFN RGT16 Pins UNIT RθJCtop Junction-to-case (top) thermal resistance 64.2 °C/W RθJB Junction-to-board thermal resistance 22.9 °C/W ψJT Junction-to-top characterization parameter 1.7 °C/W ψJB Junction-to-board characterization parameter 22.9 °C/W RθJCbot Junction-to-case (bottom) thermal resistance 25 °C/W 版权 © 2015, Texas Instruments Incorporated 5 SN65HVD63 ZHCSE43 – JULY 2015 www.ti.com.cn 7.5 Electrical Characteristics over recommended operating conditions (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX TXIN = L (active) 28 33 TXIN = H (quiescent) 25 31 TXIN = 115 kbps, 50% duty cycle 27 33 12 17 UNIT POWER SUPPLY ICC Supply current DIRSET1 = L DIRSET2 = H DIRSET1 = H, DIRSET2 = H (standby) IVL Logic supply current TXIN = H, RXIN = DC input PSRR Receiver power supply rejection ratio VTXIN = VL VOH High-level logic output voltage (RXOUT, DIR) IOH = –4 mA for VL > 2.4 V, IOH = –2 mA for VL < 2.4 V VOL Low-level logic output voltage (RXOUT, DIR) IOL = 4 mA for VL > 2.4 V, IOL = 2 mA for VL < 2.4 V 50 45 60 mA µA dB LOGIC PINS 90%VVL V 10%VV V L COAX DRIVER VO(PP) Peak-to-peak output voltage at device pin TXOUT (see 图 19) VRES = 1.5 V (Maximum setting) VO(PP) Peak-to-peak voltage at coax out (see 图 19) VRES = 1.5 V VO(OFF) Off-state output voltage Output emissions fO Output frequency ∆f Output frequency variation ZO Output impedance | IOS | Short-circuit output current 2.24 VRES = 0.7 V (Minimum setting) 2.5 1.17 5 VRES = 0.7 V 1.3 6 –0.6 At TXOUT At coax out 0.3 VPP dBm 1 mVpp –60 dBm Coupled to coaxial cable with characteristic impedance of 50 Ω, as shown in 图 1 (1) (2) N/A 2.176 –100 MHz 100 ppm At 100 kHz 0.03 At 10 MHz 3.5 TXOUT is also protected by a thermal shutdown circuit during short-circuit faults 300 450 mA 79 112 158 mVPP –12 dBm Ω COAX RECEIVER VIT Input threshold fIN = 2.176 MHz –18 –15 ZIN Input impedance f = fO 11 21 Passband VRXIN = 1.12VP_P 1.1 4.17 MHz Receiver rejection range 2.176-MHz carrier amplitude of 112.4 mVPP, frequency band of spurious components with 800 mVPP allowed. 1.1 4.17 MHz Receiver noise filter time (slow bit rate) DIRSET for 9.6 kbps 4 µs Receiver noise filter time (fast bit rate) DIRSET for > 9.6 kbps 2 µs kΩ RECEIVER FILTER fPB fREJ tnoise filter XTAL AND SYNC II Input leakage current XTAL1, XTAL2, 0V < VIN < VCC VOL Output low voltage SYNCOUT, with 1-kΩ resistor from SYNCOUT to VCC (1) (2) 6 –15 15 µA 0.4 V Specified by design with a recommended 470-pF capacitor between RXIN and GND. Measurements above 150 MHz are determined by setup. Conforms to AISG spectrum emissions mask, 3GPP TS 25.461, see 图 21. 版权 © 2015, Texas Instruments Incorporated SN65HVD63 www.ti.com.cn ZHCSE43 – JULY 2015 7.6 Switching Characteristics over recommended operating conditions (unless otherwise noted) PARAMETER TEST CONDITIONS tpAQ, tpQA Coax driver propagation delay See 图 19 tr, tf Coax receiver output rise/fall time CL = 15 pF, RL = 1 kΩ; see 图 19 tPHL, tPLH Receiver propagation delay See 图 20 Coax receiver output duty cycle MIN Direction control active duration MAX 5 5.5 UNIT µs 20 ns 11 µs VRXIN(ON) = 630 mVpp, VRXIN(OFF) < 5 mVpp, 50% duty cycle 40% 60% VRXIN(ON) = 200 mVpp, VRXIN(OFF) < 5 mVpp, 50% duty cycle 40% 60% DIRSET2 = GND or OPEN, DIRSET1 = GND or OPEN tDIR TYP 1667 DIRSET2 = GND, DIRSET1 = VL 417 DIRSET2 = VL, DIRSET1 = VL 137 µs tDIRSKEW Direction control skew (DIR to RXOUT) tdis Standby disable delay 300 mVPP at 2.176 MHz on RXIN 2 ms ten Standby enable delay 300 mVPP at 2.176 MHz on RXIN 2 ms 版权 © 2015, Texas Instruments Incorporated 270 ns 7 SN65HVD63 ZHCSE43 – JULY 2015 www.ti.com.cn 7.7 Typical Characteristics -50 10 AISG Mask AISG Mask -60 Transmitter Output (dBm) Transmitter Output (dBm) 0 -10 -20 -30 -40 -50 -60 -70 -80 -90 -100 -110 -70 -120 30M -80 0 10M 20M 30M Frequency (Hz) 50% Duty Cycle 130M D002 50% Duty Cycle CF = 470 pF 230M Frequency (Hz) -50 10 AISG Mask AISG Mask -60 Transmitter Output (dBm) Transmitter Output (dBm) 0 -10 -20 -30 -40 -50 -60 -70 -80 -90 -100 -110 -70 -120 30M -80 0 10M 20M 30M Frequency (Hz) 50% Duty Cycle 130M D004 50% Duty Cycle CF = 470 pF 230M Frequency (Hz) 330M D005 CF = 470 pF 图 4. High-Frequency Emissions Spectrum With 38.4-kbps Signaling Rate 图 3. Low-Frequency Emissions Spectrum With 38.4-kbps Signaling Rate 10 -50 AISG Mask AISG Mask 0 -60 -10 Transmitter Output (dBm) Transmitter Output (dBm) D003 CF = 470 pF 图 2. High-Frequency Emissions Spectrum With 9.6-kbps Signaling Rate 图 1. Low-Frequency Emissions Spectrum With 9.6-kbps Signaling Rate -20 -30 -40 -50 -60 -70 -80 -90 -100 -110 -70 -80 0 10M 20M Frequency (Hz) 50% Duty Cycle CF = 470 pF 图 5. Low-Frequency Emissions Spectrum With 115.2-kbps Signaling Rate 8 330M 30M -120 30M 130M D006 50% Duty Cycle 230M Frequency (Hz) 330M D007 CF = 470 pF 图 6. High-Frequency Emissions Spectrum With 115.2-kbps Signaling Rate 版权 © 2015, Texas Instruments Incorporated SN65HVD63 www.ti.com.cn ZHCSE43 – JULY 2015 40 6 35 5 Transmitter Output (dBm) Transmitter Output Impedance (:) Typical Characteristics (接 接下页) 30 25 20 15 10 4 3 2 1 0 -1 5 0 0.1M 1M 10M -2 0.7 100M Frequency (Hz) 0.9 D008 图 7. Transmitter Output Impedance 1.1 VRES Voltage (V) 1.3 1.5 D009 图 8. Transmit Power Adjustment 27 13 12.9 Quiescent Current (mA) Quiescent Current (mA) 26.5 26 25.5 25 12.8 12.7 12.6 12.5 12.4 12.3 12.2 24.5 12.1 24 12 3 3.5 4 4.5 Supply Voltage (V) 5 5.5 3 TXIN = VL 5 5.5 D011 图 10. Supply Current vs Supply Voltage in Standby Mode 13.2 7 13.1 6 Transmitter Output (dBm) Ouiescent Current (mA) 4 4.5 Supply Voltage (V) TXIN = VL 图 9. Supply Current vs Supply Voltage While Transmitting 13 12.9 12.8 12.7 12.6 5 4 3 2 1 12.5 12.4 -40 3.5 D011 0 -25 -10 5 20 35 50 65 Temperature (qC) 80 95 110 125 图 11. Supply Current vs Temperature in Standby Mode 版权 © 2015, Texas Instruments Incorporated D012 3 3.5 4 4.5 Supply Voltage (V) 5 5.5 D013 图 12. Transmitter Output Power vs Supply Voltage 9 SN65HVD63 ZHCSE43 – JULY 2015 www.ti.com.cn 7 30000 6 25000 Receiver Input Impedance (:) Transmitter Output (dBm) Typical Characteristics (接 接下页) 5 4 3 2 1 0 -40 -25 -10 5 20 35 50 65 Temperature (qC) 80 95 20000 15000 10000 5000 0 100 110 125 图 13. Transmitter Output Power vs Temperature 10k 100k Frequency (Hz) 1M 5M D015 图 14. Receiver Input Impedance vs Frequency 360 0.18 DIR Receiver Output Delay (nS) RTXOUT = Stable Low RTXOUT = Stable High 0.17 Receiver Input Threshold (V) 1k D014 0.16 0.15 0.14 0.13 0.12 0.11 0.1 355 350 345 0.09 0.08 -40 -25 -10 5 20 35 50 65 Temperature (qC) 80 95 340 -40 110 125 图 15. Receiver Input Threshold vs Temperature 5 20 35 50 65 Temperature (qC) 80 95 110 125 D017 图 16. DIR Output Delay vs Temperature Receiver Output Dutycycle (%) Receiver Output Dutycycle (%) 56 52 48 44 -7 -4 -1 Receiver Input (dBm) 2 图 17. Receiver Duty Cycle With 9.6 kbps Signaling Rate 10 -10 60 60 40 -10 -25 D016 5 D018 50 40 30 20 10 0 -10 -7 -4 -1 Receiver Input (dBm) 2 5 D019 图 18. Receiver Duty Cycle With 115.2 kbps Signaling Rate 版权 © 2015, Texas Instruments Incorporated SN65HVD63 www.ti.com.cn ZHCSE43 – JULY 2015 8 Parameter Measurement Information Signal generator rate is 115 kbps, 50% duty cycle. Rise and fall times are less than 6 ns, and nominal output levels are 0 V and 3 V. Coupling capacitor, CC, is 220 nF. Driver Amplitude Adjust RAMP TXOUT RES 50 Ω XTAL2 TXOUT 2.176–MH_ z Crystal 2.176–MH_ z Generator XTAL2 Coax In TXIN Received Data Out Cc 50 Ω RXIN Signal Generator Coax Out Direction Control Cc 50 Ω RXIN VPP 0.5 V L VL RXIN 0.5 V L TXIN t pQA t pAQ VL 0.5 V L RXOUT t PHL t PLH VPP VL 0.5 VPP TXOUT 0.5 V L DIR t DIRSKEW 图 19. Measurement of Modem Driver Output Voltage With 50-Ω Loads 图 20. Measurement of Modem Receiver Propagation Delays 图 21. AISG Emissions Template 版权 © 2015, Texas Instruments Incorporated 11 SN65HVD63 ZHCSE43 – JULY 2015 www.ti.com.cn 9 Detailed Description 9.1 Overview The SN65HVD63 transceiver modulates and demodulates signals between the logic (baseband) and a frequency suitable for long coaxial media. The SN65HVD63 device is an integrated AISG transceiver designed to meet the requirements of the upcoming Antenna Interface Standards Group v3.0 specification. The SN65HVD63 receiver integrates an active bandpass filter to enable demodulation of signals even in the presence of spurious frequency components. The filter has a 2.176-MHz center frequency. The transmitter supports adjustable output power levels from 0 dBm to 6 dBm delivered to the 50-Ω coax cable. The SN65HVD63 transmitter is compliant with the spectrum emission requirement provided by the AISG standard. A direction control output facilitates bus arbitration for an RS-485 interface. This device integrates an oscillator input for a crystal, and also accepts standard clock inputs to the oscillator. 9.2 Functional Block Diagram VL VCC 3 13 1 9 XTAL1 14 XTAL2 15 SYNCOUT RES FILTER XTAL Buffer OOK MOD OUTPUT STAGE PREAMP 12 TXOUT 2.176–MHz TXIN DIRSET1 DIRSET2 DIR RXOUT 2 7 6 Control Logic FILTER 5 OOK DEMOD 4 Buffer 11 Buffer RXIN 2.176–MHz COMP RECEIVER THRESHOLD 16 8 10 GND GND BIAS 9.3 Feature Description 9.3.1 Coaxial Interface The SN65HVD63 transceiver enables the transfer of data between radio equipment by modulating baseband data to a carrier frequency of 2.176 MHz (per the AISG standard). The transmitter output amplitude can be configured from 0 dBm to 6 dBm in order to communicate over a variety of different links, and the output emissions spectrum is designed to be compliant to AISG limits. The receiver features an active bandpass filter circuit that helps to separate the carrier frequency data from other spurious frequency components. 9.3.2 Reference Input The 2.176-MHz modulation frequency is derived from an input reference that is nominally 8.704 MHz. The input reference can come either from a crystal or from an oscillator circuit with a tolerance of up to 30 ppm. 9.3.3 RS-485 Direction Control To facilitate bus arbitration of an RS-485 interface, the SN65HVD63 provides a direction control output that can be used to control the enable/disable controls of an RS-485 transceiver. The direction control output automatically toggles based on activity present on the coaxial input interface, and has an adjustable time constant (controlled by the DIRSET1 and DIRSET2 pins) in order to accommodate various signaling rates. 12 版权 © 2015, Texas Instruments Incorporated SN65HVD63 www.ti.com.cn ZHCSE43 – JULY 2015 9.4 Device Functional Modes If DIRSET1 and DIRSET2 are in a logic high state, the device will be in standby mode. While in standby mode, the receiver functions normally, detecting carrier frequency activity on the RXIN pin and setting the RXOUT state. The transmitter circuits are not active in standby mode, thus the TXOUT pin is idle regardless of the logic state of TXIN. The supply current in standby mode is significantly reduced, allowing power savings when the node is not transmitting. When not in standby mode, the default power-on state is idle. When in idle mode, RXOUT is high, and TXOUT is quiet. The device transitions to receive mode when a valid modulated signal is detected on the RXIN line or the device transitions to transmit mode when TXIN goes low. The device stays in either receive or transmit mode until DIR time-out (nominal 16 bit times) after the last activity on RXOUT or TXIN. When in receive mode: • RXOUT responds to all valid modulated signals on RXIN, whether from the local transmitter, a remote transmitter, or long noise burst. • TXOUT responds to TXIN, generating 2.176-MHz signals on TXOUT when TXIN is low, and TXOUT is quiet when TXIN is high. (In normal operation, TXIN is expected to remain high when the device is in receive mode.) • The device stays in receive mode until 16 bit times after the last rising edge on RXOUT, caused by valid modulated signal on the RXIN line. When in transmit mode: • RXOUT stays high, regardless of the input signal on RXIN. • TXOUT responds to TXIN, generating 2.176-MHz signals on TXOUT when TXIN is low, and TXOUT is quiet when TXIN is high. • The device stays in transmit mode until 16 bit times after TXIN goes high. 表 1 shows the driver functions. 表 2 shows the receiver functions. 图 22 shows the transitions between each state. 表 1. Driver Function Table TXIN (1) [DIRSET1, DIRSET2] H [L,L], [L,H] or [H,L] L X (1) TXOUT < 1 mVPP at 2.176 MHz VOPP at 2.176 MHz [H,H] < 1 mVPP at 2.176 MHz COMMENT Driver not active Driver active Standby mode H = High, L = Low, X = Indeterminate 表 2. Receiver and DIR Function Table RXIN (1) COMMENT (see 图 22) RXOUT DIR H L No outgoing or incoming signal < VIT at 2.176 MHz for less than tDIR time-out H H Incoming 1 bit, DIR stays HIGH for DIR time-out > VIT at 2.176 MHz for longer than tnoise filter L H Incoming 0 bit, DIR output is HIGH H L Outgoing message, DIR stays LOW for DIR time-out IDLE mode (not transmitting or receiving) < VIT at 2.176 MHz for longer than DIR time-out RECEIVE mode (not already transmitting) TRANSMIT mode (not already receiving) X (1) H = High, L = Low, X = Indeterminate 版权 © 2015, Texas Instruments Incorporated 13 SN65HVD63 ZHCSE43 – JULY 2015 www.ti.com.cn Transmit 0 TXOUT=Active DIR = L RXIN 9 Receive 0 RXOUT = L DIR = H TXIN ; IDLE TXIN 9 TXIN ; RXOUT = H TXOUT=Idle DIR = L Transmit 1 TXOUT=Idle DIR = L RXIN 9 RXIN ; Receive 1 DIR Timeout DIR Timeout RXOUT = H DIR = H 图 22. State Transition Diagram 14 版权 © 2015, Texas Instruments Incorporated SN65HVD63 www.ti.com.cn ZHCSE43 – JULY 2015 10 Application and Implementation 注 Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality. 10.1 Application Information 10.1.1 Driver Amplitude Adjust The SN65HVD63 device can provide up to 2.5 V of peak-to-peak output signal at the TXOUT pin to compensate for potential loss within the external filter, cable, connections, and termination. External resistors are used to set the amplitude of the modulated driver output signal. Resistors connected across RES and BIAS set the output amplitude. The maximum peak-to-peak voltage at TXOUT is 2.5 V, corresponding to 6 dBm on the coaxial cable. The TXOUT voltage level can be adjusted by choice of resistors to set the voltage at the RES pin. according to the following equation: VTXOUT (VPP) = (2.5 VPP × VRES (V)) / 1.5 V VRES (V) = 1.5 V × R2 / (R1 + R2) VTXOUT (VPP) = 2.5 VPP × R2 / (R1 + R2) (1) The voltage at the RES pin should be from 0.7 V to 1.5 V. Connect RES directly to the BIAS (R1 = 0 Ω) for maximum output level of 2.5 VPP. This gives a minimum voltage level at TXOUT of 1.2 VPP, corresponding to about 0 dBm at the coaxial cable. A 1-μF capacitor should be connected between the BIAS pin and GND. To obtain a nominal power level of 3 dBm at the feeder cable as the AISG standard requires, use R1 = 4.1 kΩ and R2 = 10 kΩ that provide 1.78 VPP at TXOUT. 10.1.2 Direction Control In many applications the mast-top modem that receives data from the base distributes the received data through an RS-485 network to several mast-top devices. When the mast-top modem receives the first logic 0 bit (active modulated signal) it takes control of the mast-top RS-485 network by asserting the direction control signal. The duration of the direction control assertion should be optimized to pass a complete message of length B bits at the known signaling rate (1/tBIT) before relinquishing control of the mast-top RS-485 network. For example, if the messages are 10 bits in length (B=10) and the signaling rate is 9600 bits per second (tBIT = 0.104 ms) then a positive pulse of duration 1.7 ms is sufficient (with margin to allow for network propagation delays) to enable the mast-top RS-485 drivers to distribute each received message. 图 23 shows the assertion of direction control. Coax In Data Out Direction 图 23. Assertion of Direction Control 10.1.3 Direction Control Time Constant The time constant for the direction control function can be set by the control mode pins, DIRSET1 and DIRSET2. These pins should be set to correspond to the desired data rate. With no external connections to the control mode pins, the internal time constant is set to the maximum value, corresponding to the minimum data rate. 版权 © 2015, Texas Instruments Incorporated 15 SN65HVD63 ZHCSE43 – JULY 2015 www.ti.com.cn Application Information (接 接下页) 10.1.4 Conversion Between dBm and Peak-to-Peak Voltage dBm = 20 × LOG10 [Volts-pp / SQRT(0.008 × Zo)] = 20 × LOG10 [VPP / 0.63] for Zo = 50 Ω VPP = SQRT(0.008 × Zo) × 10(dBm/20) = 0.63 × 10(dBm/20) for Zo = 50 Ω (2) (3) 表 3 shows conversions between dBm and peak-to-peak voltage with a 50-Ω load, for various levels of interest including reference levels from the 3GPP TS 25.461 Technical Specification. 表 3. Conversions Between dBM and Peak-to-Peak Voltage SIGNAL ON COAX dBm VPP Maximum Driver ON Signal 5 1.12 Nominal Driver ON Signal 3 0.89 Minimum Driver ON Signal 1 0.71 AISG Maximum Receiver Threshold –12 0.16 Nominal Receiver Threshold –15 0.11 Minimum Receiver Threshold –18 0.08 Maximum Driver OFF Signal –40 0.006 10.2 Typical Application The AISG On-Off Keying (OOK) interface allows for command, control, and diagnostic information to be communicated between a base station and the corresponding tower-mounted antennae. 图 24 shows a typical application. RF+ Modulated Signals + Power (On Coax) RF Signals RS-485 Signals (Twisted Pair) Power Diagnostics and Control 图 24. Typical AISG Application 10.2.1 Design Requirements An AISG transceiver is used to convert between digital logic-level signals and RF signals. The AISG standard requires an RF carrier frequency of 2.176 MHz with 100-ppm accuracy. The output signal of the driver, when active, should be from 1 dBm to 5 dBm. The receiver must be designed such that the input threshold is from –18 dBm to –12 dBm. 10.2.2 Detailed Design Procedure To ensure accuracy of the carrier frequency, an input reference frequency equal to four times the carrier (that is, 8.704 MHz) should be connected to the XTAL1 or XTAL2 inputs. This signal can come from a crystal (connected between XTAL1 and XTAL2) or from a PLL/clock generator circuit (connected to XTAL1 with XTAL2 grounded). The frequency accuracy must be within 100 ppm. 16 版权 © 2015, Texas Instruments Incorporated SN65HVD63 www.ti.com.cn ZHCSE43 – JULY 2015 Typical Application (接 接下页) The driver output power level of the SN65HVD63 device can be adjusted through use of the RES pin. To align with AISG requirements, a nominal power level of 3 dBm should be configured by connecting a 4.1-kΩ resistor between RES and BIAS and a 10-kΩ resistor between RES and GND. 图 25 shows an example schematic. 39 pF 8.704 MHz 39 pF VCC SYNCOUT VCC 49.9 Ÿ BIAS 470 pF RES GND DIRSET1 VL DIRSET2 RXIN DIR 220 nF TXOUT TXIN RXOUT 0.1 F XTAL1 GND VL XTAL2 0.1 F 4.1 NŸ 10 NŸ 图 25. SN65HVD63 Schematic 10.2.3 Application Curve 图 26 shows the application curve for the SN65HVD63 device. 图 26. SN65HVD63 Application Curve 版权 © 2015, Texas Instruments Incorporated 17 SN65HVD63 ZHCSE43 – JULY 2015 www.ti.com.cn 11 Power Supply Recommendations The SN65HVD63 device has two power supply pins: VCC, which provides power to the analog circuitry, and VL, which is a logic supply. VCC should be operated from 3 V to 5.5 V, while VL can range from 1.6 V to 5.5 V to interface to different logic levels. Power supply decoupling capacitances of at least 0.1 µF should be placed as close as possible to each power supply pin. 12 Layout 12.1 Layout Guidelines Best practices for high-speed PCB design should be observed because the coax interface to the SN65HVD63 device operates at RF. The RF signaling traces should have a controlled characteristic impedance that is wellmatched to the coaxial line. A continuous reference plane should be used to avoid impedance discontinuities. Power and ground distribution should be done through planes rather than traces to decrease series resistance and increase the effective decoupling capacitance on the power rails. 12.2 Layout Example 图 27. SN65HVD63 Layout 18 版权 © 2015, Texas Instruments Incorporated SN65HVD63 www.ti.com.cn ZHCSE43 – JULY 2015 13 器件和文档支持 13.1 相关文档  《天线线路器件的控制接口》,天线接口标准标准组织,标准编号 AISG v2.0 13.2 社区资源 The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support. 13.3 商标 E2E is a trademark of Texas Instruments. AISG is a registered trademark of Antenna Interface Standards Group, Ltd. All other trademarks are the property of their respective owners. 13.4 静电放电警告 这些装置包含有限的内置 ESD 保护。 存储或装卸时,应将导线一起截短或将装置放置于导电泡棉中,以防止 MOS 门极遭受静电损 伤。 13.5 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. 14 机械、封装和可订购信息 以下页中包括机械、封装和可订购信息。 这些信息是针对指定器件可提供的最新数据。 这些数据会在无通知且不 对本文档进行修订的情况下发生改变。 欲获得该数据表的浏览器版本,请查阅左侧的导航栏。 版权 © 2015, Texas Instruments Incorporated 19 PACKAGE OPTION ADDENDUM www.ti.com 4-Dec-2025 PACKAGING INFORMATION Orderable part number (1) Status Material type (1) (2) Package | Pins Package qty | Carrier RoHS (3) Lead finish/ Ball material MSL rating/ Peak reflow (4) (5) Op temp (°C) Part marking (6) SN65HVD63RGTR Active Production VQFN (RGT) | 16 3000 | LARGE T&R Yes FULL NIPDAU Level-2-260C-1 YEAR -40 to 105 HVD63 SN65HVD63RGTR.A Active Production VQFN (RGT) | 16 3000 | LARGE T&R Yes FULL NIPDAU Level-2-260C-1 YEAR -40 to 105 HVD63 SN65HVD63RGTRG4 Active Production VQFN (RGT) | 16 3000 | LARGE T&R Yes FULL NIPDAU Level-2-260C-1 YEAR -40 to 105 HVD63 SN65HVD63RGTRG4.A Active Production VQFN (RGT) | 16 3000 | LARGE T&R Yes FULL NIPDAU Level-2-260C-1 YEAR -40 to 105 HVD63 SN65HVD63RGTT Active Production VQFN (RGT) | 16 250 | SMALL T&R Yes FULL NIPDAU Level-2-260C-1 YEAR -40 to 105 HVD63 SN65HVD63RGTT.A Active Production VQFN (RGT) | 16 250 | SMALL T&R Yes FULL NIPDAU Level-2-260C-1 YEAR -40 to 105 HVD63 Status: For more details on status, see our product life cycle. (2) Material type: When designated, preproduction parts are prototypes/experimental devices, and are not yet approved or released for full production. Testing and final process, including without limitation quality assurance, reliability performance testing, and/or process qualification, may not yet be complete, and this item is subject to further changes or possible discontinuation. If available for ordering, purchases will be subject to an additional waiver at checkout, and are intended for early internal evaluation purposes only. These items are sold without warranties of any kind. (3) RoHS values: Yes, No, RoHS Exempt. See the TI RoHS Statement for additional information and value definition. (4) Lead finish/Ball material: Parts may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two lines if the finish value exceeds the maximum column width. (5) MSL rating/Peak reflow: The moisture sensitivity level ratings and peak solder (reflow) temperatures. In the event that a part has multiple moisture sensitivity ratings, only the lowest level per JEDEC standards is shown. Refer to the shipping label for the actual reflow temperature that will be used to mount the part to the printed circuit board. (6) Part marking: There may be an additional marking, which relates to the logo, the lot trace code information, or the environmental category of the part. Multiple part markings will be inside parentheses. Only one part marking contained in parentheses and separated by a "~" will appear on a part. If a line is indented then it is a continuation of the previous line and the two combined represent the entire part marking for that device. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. Addendum-Page 1 PACKAGE OPTION ADDENDUM www.ti.com 4-Dec-2025 Addendum-Page 2 PACKAGE OUTLINE RGT0016A VQFN - 1 mm max height SCALE 3.600 PLASTIC QUAD FLATPACK - NO LEAD 3.1 2.9 A B PIN 1 INDEX AREA 3.1 2.9 C 1 MAX SEATING PLANE 0.05 0.00 0.08 1.45 0.1 (0.2) TYP 5 12X 0.5 8 EXPOSED THERMAL PAD 4 9 4X 1.5 SYMM 17 1 12 16X PIN 1 ID (OPTIONAL) 13 16 0.1 0.05 SYMM 16X 0.30 0.18 C A B 0.5 0.3 4219032/A 02/2017 NOTES: 1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing per ASME Y14.5M. 2. This drawing is subject to change without notice. 3. The package thermal pad must be soldered to the printed circuit board for thermal and mechanical performance. 4. Reference JEDEC registration MO-220 www.ti.com EXAMPLE BOARD LAYOUT RGT0016A VQFN - 1 mm max height PLASTIC QUAD FLATPACK - NO LEAD ( 1.45) SYMM 16 13 16X (0.6) 1 12 16X (0.24) SYMM 17 (0.475) TYP (2.8) 12X (0.5) 9 4 ( 0.2) TYP VIA 5 (R0.05) ALL PAD CORNERS 8 (0.475) TYP (2.8) LAND PATTERN EXAMPLE EXPOSED METAL SHOWN SCALE:20X 0.07 MIN ALL AROUND 0.07 MAX ALL AROUND SOLDER MASK OPENING METAL EXPOSED METAL EXPOSED METAL SOLDER MASK OPENING METAL UNDER SOLDER MASK NON SOLDER MASK DEFINED (PREFERRED) SOLDER MASK DEFINED SOLDER MASK DETAILS 4219032/A 02/2017 NOTES: (continued) 5. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature number SLUA271 (www.ti.com/lit/slua271). 6. Vias are optional depending on application, refer to device data sheet. If any vias are implemented, refer to their locations shown on this view. It is recommended that vias under paste be filled, plugged or tented. www.ti.com EXAMPLE STENCIL DESIGN RGT0016A VQFN - 1 mm max height PLASTIC QUAD FLATPACK - NO LEAD ( 1.34) 13 16 16X (0.6) 1 12 16X (0.24) 17 SYMM (2.8) 12X (0.5) 9 4 METAL ALL AROUND 5 SYMM 8 (R0.05) TYP (2.8) SOLDER PASTE EXAMPLE BASED ON 0.125 mm THICK STENCIL EXPOSED PAD 17: 86% PRINTED SOLDER COVERAGE BY AREA UNDER PACKAGE SCALE:25X 4219032/A 02/2017 NOTES: (continued) 7. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. 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SN65HVD63RGTT
物料型号:SN65HVD63 器件简介:SN65HVD63是一款符合AISG®标准的同轴调制解调器收发器,适用于无线设备之间的有线数据传输。

引脚分配:共16个引脚,包括电源Vcc、逻辑电源VL、同轴输入RXIN、同轴输出TXOUT、方向控制DIR等。

参数特性:3V至5.5V的供电范围,独立的1.6V至5.5V逻辑电源,-15dBm至+5dBm的接收机输入动态范围,可调的0dBm至6dBm的同轴电缆输出功率。

功能详解:集成了2.176MHz中心频率的有源带通滤波器,支持低功耗待机模式,方向控制输出用于RS-485总线仲裁,支持高达115kbps的信号传输。

应用信息:适用于AISG接口的天线线路设备、塔顶放大器和通用调制解调器接口。

封装信息:3mm×3mm的16引脚VQFN封装。
SN65HVD63RGTT 价格&库存

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SN65HVD63RGTT
  •  国内价格
  • 1+23.10120
  • 10+21.94560
  • 30+21.26520

库存:114

SN65HVD63RGTT
  •  国内价格 香港价格
  • 250+38.16793250+4.93913
  • 500+37.04794500+4.79420
  • 750+36.48726750+4.72165
  • 1250+35.865871250+4.64124
  • 1750+35.502491750+4.59421
  • 2500+35.153322500+4.54903

库存:129

SN65HVD63RGTT
  •  国内价格 香港价格
  • 1+61.646891+7.97744
  • 10+47.4666110+6.14243
  • 25+43.9230925+5.68388
  • 100+40.02594100+5.17957

库存:129