SN75LBC179, SN65LBC179, SN65LBC179Q
SLLS173G – JANUARY 1994 – REVISED OCTOBER 2022
Low-Power Differential Line Driver and Receiver Pairs
1 Features
•
•
•
•
•
•
•
•
Designed for high-speed multipoint data
transmission over long cables
Operates with pulse widths as low as 30 ns
Low supply current: 5 mA max
Meets or exceeds the standard requirementsof
ANSI RS-485 and ISO 8482:1987(E)
Common-mode voltage range of − 7 V to 12 V
Positive-and negative-output current limiting
Driver thermal shutdown protection
Pin compatible with the SN75179B
2 Description
The
SN65LBC179,
SN65LBC179Q,
and
SN75LBC179 differential driver and receiver pairs are
monolithic integrated circuits designed for bidirectional
data communication over long cables that take on
the characteristics of transmission lines. The devices
are balanced, or differential, voltage mode devices
that meet or exceed the requirements of industry
standards ANSIRS-485 and ISO 8482:1987(E).
Both devices are designed using TI’s proprietary
LinBiCMOS™ with the low power consumption of
CMOS and the precision and robustness of bipolar
transistors in the same circuit.
The
SN65LBC179,
SN65LBC179Q,
and
SN75LBC179 combine a differential line driver and
differential line receiver and operate from a single
5-V supply. The driver differential outputs and the
receiver differential inputs are connected to separate
terminals for full-duplex operation and are designed to
present minimum loading to the bus when powered
off (VCC = 0). These parts feature a wide commonmode voltage range making them suitable for point-topoint or multipoint data bus applications. The devices
also provide positive and negative-current limiting
and thermal shutdown for protection from line fault
conditions. The line driver shuts down at a junction
temperature of approximately 172°C.
The
SN65LBC179,
SN65LBC179Q,
and
SN75LBC179 are available in the 8-pin dual-in-line
and small-outline packages. The SN75LBC179 is
characterized for operation over the commercial
temperature range of 0°C to 70°C. The SN65LBC179
is characterized over the industrial temperature
range of −40°C to 85°C. The SN65LBC179Q
is characterized over the extended industrial or
automotive temperature range of −40°C to 125°C.
Package Information
PART NUMBER
SN75179B
(1)
A.
This symbol is in accordance with ANSI/IEEE Std 91-1984 and
IEC Publication 617-12.
Logic Symbol
PACKAGE(1)
BODY SIZE (NOM)
D (SOIC)
4.9 mm x 3.91 mm
P (PDIP)
9.81 mm x 6.35 mm
For all available packages, see the orderable addendum at
the end of the data sheet.
Logic Diagram (Positive Logic)
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
SN75LBC179, SN65LBC179, SN65LBC179Q
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SLLS173G – JANUARY 1994 – REVISED OCTOBER 2022
Table of Contents
1 Features............................................................................1
2 Description.......................................................................1
3 Revision History.............................................................. 2
4 Pin Configuration and Functions...................................3
5 Specifications.................................................................. 4
5.1 Absolute Maximum Ratings........................................ 4
5.2 Recommended Operating Conditions.........................4
5.3 Thermal Information....................................................5
5.4 Dissipation Rating Table............................................. 5
5.5 Electrical Characteristics - Driver................................6
5.6 Switching Characteristics - Driver............................... 6
5.7 Electrical Characteristics - Receiver........................... 7
5.8 Switching Characteristics - Receiver.......................... 7
5.9 Typical Characteristics................................................ 8
6 Parameter Measurement Information.......................... 10
7 Detailed Description......................................................12
7.1 Functional Block Diagram......................................... 12
7.2 Device Functional Modes..........................................12
7.3 Thermal Characteristics of IC Packages...................13
8 Device and Documentation Support............................15
8.1 Device Support......................................................... 15
8.2 Documentation Support............................................ 15
8.3 Receiving Notification of Documentation Updates....15
8.4 Support Resources................................................... 15
8.5 Trademarks............................................................... 15
8.6 Electrostatic Discharge Caution................................15
8.7 Glossary....................................................................15
9 Mechanical, Packaging, and Orderable Information.. 15
3 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision F (April 2006) to Revision G (October 2022)
Page
• Changed the data sheet format to the latest data sheet format..........................................................................1
• Added the Thermal Information table................................................................................................................. 5
2
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4 Pin Configuration and Functions
Figure 4-1. D or P Package (Top View)
Table 4-1. Pin Functions
PIN
NAME
NO.
TYPE(1)
DESCRIPTION
1
VCC
P
5 V Voltage Supply
2
R
O
RS485 Logic Output
3
D
I
RS485 Logic Input
4
GND
G
Ground
5
Y
O
Non-Inverting RS485 Bus Output
6
Z
O
Inverted RS485 Bus Output
7
B
I
Inverted RS485 Bus Input
8
A
I
Non-Inverting RS485 Bus Input
(1)
I = Input, O = Output, I/O = Input or Output, G = Ground, P = Power.
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5 Specifications
5.1 Absolute Maximum Ratings
See note (1)
VCC
Supply voltage range
Voltage range at A, B, Y, or
Z(2)
Voltage range at D or R(2)
IO
MIN
MAX
-0.3
7
V
-10
15
V
-0.3
VCC + 0.5
V
Receiver output current
UNIT
±10
Continuous total power dissipation(3)
mA
Internally limited
P(AVG)
Average power dissipation
RL = 54 Ω, input to D is 10 Mbps 50% duty cycle square wave,
VCC = 5.25 V, TJ = 130°C
330
mW
TSD
Thermal shutdown junction temperature
165
°C
Total power dissipation
(1)
(2)
(3)
See Section 5.4
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating
conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltage values are with respect to GND.
The maximum operating junction temperature is internally limited. Uses the dissipation rating table to operate below this temperature.
5.2 Recommended Operating Conditions
VCC
Supply voltage
VIH
High-level input voltage
D
VIL
Low-level input voltage
D
VID
Differential input voltage
VO, VI, or VIC
Voltage at any bus terminal
(separately or common-mode)
IOH
High-level output current
IOL
Low-level output current
TJ
Junction temperature
TA
Operating free-air temperature
A, B, Y, or Z
4
NOM
MAX
UNIT
5
5.25
V
2
V
0.8
V
−6(1)
6
V
−7
12
V
Y or Z
−60
R
−8
Y or Z
60
R
8
140
SN65LBC179
−40
85
SN65LBC179Q
−40
125
0
70
SN75LBC179
(1)
MIN
4.75
mA
mA
°C
°C
The algebraic convention, in which the least positive (most negative) limit is designated as minimum, is used in this data sheet for
differential input voltage, voltage at any bus terminal (separately or common mode), operating temperature, input threshold voltage,
and common-mode output voltage.
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5.3 Thermal Information
THERMAL METRIC(1)
D (SOIC)
P (PDIP)
8 Pins
8 Pins
UNIT
R θJA
Junction-to-ambient thermal resistance
116.7
65.6.4
°C/W
R θJC(top)
Junction-to-case (top) thermal resistance
63.4
54.6
°C/W
R θJB
Junction-to-board thermal resistance
56.3
42.1
°C/W
ψ JT
Junction-to-top characterization parameter
8.8
22.9
°C/W
ψ JB
Junction-to-board characterization parameter
62.6
41.6
°C/W
R θJC(bot)
Junction-to-case (bottom) thermal resistance
n/a
n/a
°C/W
(1)
See TI application note literature number SZZA003, Package Thermal Characterization Methodologies, for an explanation of this
parameter.
5.4 Dissipation Rating Table
(1)
(2)
PACKAGE
THERMAL
MODEL
D
Low K(1)
P
K(2)
High
TA < 25°C
POWER RATING
DERATING FACTOR
ABOVE TA = 25°C
TA = 70°C
POWER RATING
TA = 85°C
POWER RATING
526 mW
5.0 mW/°C
301 mW
226 mW
882 mW
8.4 mW/°C
504 mW
378 mW
840 mW
8.0 mW/°C
480 mW
360 mW
In accordance with the low effective thermal conductivity metric definitions of EIA/JESD 51−3.
In accordance with the high effective thermal conductivity metric definitions of EIA/JESD 51−7.
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5.5 Electrical Characteristics - Driver
over recommended operating conditions (unless otherwise noted)
PARAMETER
VIK
TEST CONDITIONS
Input clamp voltage
Differential output voltage(2)
RL = 60 Ω
See Figure 6-2
V
5
SN75LBC179
1.5
2.2
5
SN65LBC179,
SN65LBC179Q
1.1
2.2
5
SN75LBC179
1.5
2.2
5
Common-mode output voltage
Δ|VOC|
Change in magnitude of commonmode output voltage(3)
RL = 54 Ω
See Figure 6-1
IO
Output current with power off
VCC = 0,
VO = − 7 V to 12 V
IIH
High-level input current
IIL
Low-level input current
IOS
Short-circuit output current
−7 V ≤ VO ≤ 12 V
(3)
−1.5
2.2
VOC
(1)
(2)
UNIT
1.1
Change in magnitude of differential
output voltage(3)
Supply current
MAX
SN65LBC179,
SN65LBC179Q
Δ|VOD|
ICC
TYP(1)
II= − 18 mA
RL = 54 Ω
See Figure 6-1
|VOD|
MIN
See Figure 6-1 and Figure 6-2
V
±0.2
V
3
V
±0.2
V
±100
μA
VI = 2.4 V
−100
μA
VI = 0.4 V
−100
μA
±250
mA
1
No load
2.5
SN65LBC179,
SN75LBC179
4.2
5
mA
SN65LBC179Q
4.2
7
mA
All typical values are at VCC = 5 V and TA = 25°C.
The minimum VOD specification of the SN65179 may not fully comply with ANSI RS-485 at operating temperatures below 0°C. System
designers should take the possibly lower output signal into account in determining the maximum signal transmission distance.
Δ|VOD| and Δ|VOC| are the changes in the steady-state magnitude of VOD and VOC, respectively, that occur when the input is changed
from a high level to a low level.
5.6 Switching Characteristics - Driver
VCC = 5 V, TA = 25°C
PARAMETER
6
TEST CONDITIONS
td(OD)
Differential-output delay time
tt(OD)
Differential transition time
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RL = 54 Ω
See Figure 6-3
MIN
MAX
7
18
UNIT
ns
5
20
ns
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5.7 Electrical Characteristics - Receiver
over recommended operating conditions (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
VIT+
Positive-going input threshold voltage
IO = − 8 mA
VIT−
Negative-going input threshold voltage
IO = 8 mA
Vhys
Hysteresis voltage (VIT+ − VIT−)
VOH
High-level output voltage
VID = 200 mV,
IOH = − 8 mA
VOL
Low-level output voltage
VID = − 200 mV,
IOL = 8 mA
0.3
0.5
VI = 12 V,
Other inputs at 0 V,
SN65LBC179,
SN75LBC179
0.7
1
mA
VCC = 5 V
SN65LBC179Q
0.7
1.2
mA
VI = 12 V,
Other inputs at 0 V,
SN65LBC179,
SN75LBC179
0.8
1
mA
VCC = 0 V
SN65LBC179Q
0.8
1.2
mA
VI = − 7 V,
Other inputs at 0 V,
SN65LBC179,
SN75LBC179
−0.5
−0.8
mA
VCC = 5 V
SN65LBC179Q
−0.5
−1.0
mA
VI = − 7 V,
Other inputs at 0 V,
SN65LBC179,
SN75LBC179
−0.5
−0.8
mA
VCC = 0 V
SN65LBC179Q
−0.5
−1.0
mA
MAX
UNIT
II
Bus input current
0.2
UNIT
−0.2
3.5
V
V
45
mV
4.5
V
V
5.8 Switching Characteristics - Receiver
VCC = 5 V, TA = 25°C
PARAMETER
tPHL
TEST CONDITIONS
Propagation delay time, high- to low-level
output
tPLH
Propagation delay time, low- to high-level
output
tsk(p)
Pulse skew (|tPHL − tPLH| )
tt
Transition time
MIN
TYP
15
30
ns
15
30
ns
3
6
ns
3
5
ns
VID = −1.5 V to 1.5 V, See Figure 6-4
See Figure 6-4
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5.9 Typical Characteristics
8
Figure 5-1. Driver High-Level Output Voltage vs High-Level
Output Current
Figure 5-2. Driver Low-Level Output Voltage vs Low-Level
Output Current
Figure 5-3. Driver Differential Output Voltage vs Output Current
Figure 5-4. Driver Differential Output Voltage vs Free-Air
Temperature
Figure 5-5. Driver Differential Delay Time vs Free-Air
Temperature
Figure 5-6. Receiver High-Level Output Voltage vs High-Level
Output Current
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5.9 Typical Characteristics (continued)
Figure 5-7. Receiver Low-Level Output Voltage vs Low-Level
Output Current
Figure 5-8. Receiver Output Voltage vs Differential Input Voltage
Figure 5-9. Average Supply Current vs Frequency
Figure 5-10. Receiver Input Current vs Input Voltage
(Complementary Input at 0 V)
Figure 5-11. Receiver Propagation Delay Time vs Free-Air Temperature
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6 Parameter Measurement Information
Figure 6-1. Differential and Common-Mode Output Voltage Test Circuit
Figure 6-2. Differential Output Voltage Test Circuit
A.
B.
The input pulse is supplied by a generator having the following characteristics: PRR ≤ 1 MHz, 50% duty cycle, tr ≤ 6 ns, tf≤ 6 ns, ZO = 50
Ω.
CL includes probe and jig capacitance.
Figure 6-3. Driver Test Circuits and Differential Output Delay and Transition Time Voltage Waveforms
10
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A.
B.
SLLS173G – JANUARY 1994 – REVISED OCTOBER 2022
The input pulse is supplied by a generator having the following characteristics: PRR ≤ 1 MHz, 50% duty cycle, tr ≤ 6 ns, tf≤ 6 ns, ZO = 50
Ω.
CL includes probe and jig capacitance.
Figure 6-4. Receiver Test Circuit and Propagation Delay and Transition Time Voltage Waveforms
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7 Detailed Description
7.1 Functional Block Diagram
Figure 7-1. Schematics of Inputs and Outputs
7.2 Device Functional Modes
Function Tables
(1)
12
Table 7-1. Driver(1)
OUTPUTS
INPUT
D
Y
H
H
L
L
L
H
Z
H = high level, L = low level, ? = indeterminate
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Table 7-2. Receiver(1)
(1)
DIFFERENTIAL INPUTS
A−B
OUTPUT
R
VID ≥ 0.2 V
H
−0.2 V < VID < 0.2 V
?
VID ≤ − 0.2 V
L
Open circuit
H
H = high level, L = low level, ? = indeterminate
7.3 Thermal Characteristics of IC Packages
θJA (Junction-to-Ambient Thermal Resistance) is defined as the difference in junction temperature to ambient
temperature divided by the operating power.
θJA is not a constant and is a strong function of:
•
•
•
the PCB design (50% variation
altitude (20% variation)
device power (5% variation
θJA can be used to compare the thermal performance of packages if the specific test conditions are defined and
used. Standardized testing includes specification of PCB construction, test chamber volume, sensor locations,
and the thermal characteristics of holding fixtures. θJA is often misused when it is used to calculate junction
temperatures for other installations.
TI uses two test PCBs as defined by JEDEC specifications. The low-k board gives average in-use condition
thermal performance and consists of a single trace layer 25 mm long and 2-oz thick copper. The high-k board
gives best case in−use condition and consists of two 1-oz buried power planes with a single trace layer 25 mm
long with 2-oz thick copper. A 4% to 50% difference in θJA can be measured between these two test cards.
θJC (Junction-to-Case Thermal Resistance) is defined as difference in junction temperature to case divided by
the operating power. It is measured by putting the mounted package up against a copper block cold plate to
force heat to flow from die, through the mold compound into the copper block.
θJC is a useful thermal characteristic when a heatsink is applied to package. It is not a useful characteristic
to predict junction temperature as it provides pessimistic numbers if the case temperature is measured in a
non-standard system and junction temperatures are backed out. It can be used with θjb in 1-dimensional thermal
simulation of a package system.
θJB (Junction-to-Board Thermal Resistance) is defined to be the difference in the junction temperature and the
PCB temperature at the center of the package (closest to the die) when the PCB is clamped in a cold−plate
structure. θjb is only defined for the high-k test card.
θJB provide an overall thermal resistance between the die and the PCB. It includes a bit of the PCB thermal
resistance (especially for BGAs with thermal balls) and can be used for simple 1-dimensional network analysis of
package system (see Figure 7-2).
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Figure 7-2. Thermal Resistance
14
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8 Device and Documentation Support
TI offers an extensive line of development tools. Tools and software to evaluate the performance of the device,
generate code, and develop solutions are listed below.
8.1 Device Support
8.2 Documentation Support
8.2.1 Related Documentation
8.3 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on
Subscribe to updates to register and receive a weekly digest of any product information that has changed. For
change details, review the revision history included in any revised document.
8.4 Support Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
8.5 Trademarks
LinBiCMOS™ is a trademark of LinBiCMOS.
TI E2E™ is a trademark of Texas Instruments.
All trademarks are the property of their respective owners.
8.6 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
8.7 Glossary
TI Glossary
This glossary lists and explains terms, acronyms, and definitions.
9 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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18-Nov-2022
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
SN65LBC179D
LIFEBUY
SOIC
D
8
75
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
6LB179
SN65LBC179DR
ACTIVE
SOIC
D
8
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
6LB179
Samples
SN65LBC179DRG4
ACTIVE
SOIC
D
8
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
6LB179
Samples
SN65LBC179P
ACTIVE
PDIP
P
8
50
RoHS & Green
NIPDAU
N / A for Pkg Type
-40 to 85
65LBC179
Samples
SN65LBC179QD
ACTIVE
SOIC
D
8
75
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
LB179Q
Samples
SN65LBC179QDG4
ACTIVE
SOIC
D
8
75
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
LB179Q
Samples
SN65LBC179QDR
ACTIVE
SOIC
D
8
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
LB179Q
Samples
SN65LBC179QDRG4
ACTIVE
SOIC
D
8
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
LB179Q
Samples
SN75LBC179D
LIFEBUY
SOIC
D
8
75
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
0 to 70
7LB179
SN75LBC179DR
LIFEBUY
SOIC
D
8
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
0 to 70
7LB179
SN75LBC179DRG4
LIFEBUY
SOIC
D
8
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
0 to 70
7LB179
SN75LBC179P
ACTIVE
PDIP
P
8
50
RoHS & Green
NIPDAU
N / A for Pkg Type
0 to 70
75LBC179
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of