SN65LVDS349
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SLLSE23 – SEPTEMBER 2010
QUAD HIGH-SPEED DIFFERENTIAL RECEIVER
Check for Samples: SN65LVDS349
FEATURES
1
•
•
•
•
•
Meets or Exceeds the Requirements of ANSI
TIA/EIA-644A Standard
Single-Channel Signaling Rates up to
560 Mbps
-4 V to 5 V Common-Mode Input Voltage
Range
Flow-Through Architecture
SN65LVDS349 Provides a Wide CommonMode Range Replacement for the
SN65LVDS048A or the DS90LV048A
•
•
•
The SN65LVDS349 is a high-speed, quadruple
differential receiver with a wide common-mode input
voltage range. This allows receipt of TIA/EIA-644
signals with up to 3-V of ground noise or a variety of
differential and single-ended logic levels. The '349 is
in a 16-pin package to match the industry-standard
footprint of the DS90LV048. The '349 offers a
flow-through architecture with all inputs on one side
and outputs on the other to ease board layout and
reduce crosstalk between receivers.
The LVDS349 provides 3x the standard's minimum
common-mode noise voltage tolerance. The -4 V to
5 V common-mode range allows usage in harsh
operating environments or accepts LVPECL, PECL,
LVECL, ECL, CMOS, and LVCMOS levels without
level shifting circuitry. See the Application Information
Section for more details on the ECL/PECL to LVDS
interface.
APPLICATIONS
•
•
DESCRIPTION
Logic Level Translator
Point-to-Point Baseband Data Transmission
Over 100-Ω Media
ECL/PECL-to-LVTTL Conversion
Wireless Base Stations
Central Office or PABX Switches
DATA TRANSFER RA TE
vs
FREE-AIR TEMPERATURE
550
(One of four shown; failsafe circuit does not exist in LVDS349)
Data Transfer Rate - Mxfr/s
500
450
400
SN65LVDS349PW
350
300
250
200
-60
215 -1 prbs NRZ, V ID = 0.4 V
VIC = 1.2 V, CL = 5.5 pF, 40% Open Eye
4 Receivers Switching, Input Jitter < 45 ps
-40
-20
0
20
40
60
TA - Free-Air Temperature - °C
80
100
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2010, Texas Instruments Incorporated
SN65LVDS349
SLLSE23 – SEPTEMBER 2010
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
DESCRIPTION (CONTINUED)
Precise control of the differential input voltage thresholds allows for inclusion of 50 mV of input-voltage hysteresis
to improve noise rejection. The differential input thresholds are still no more than ±50 mV over the full input
common-mode voltage range.
The receiver inputs can withstand ±15 kV human-body model (HBM), with respect to ground, without damage.
This provides reliability in cabled and other connections where potentially damaging noise is always a threat.
The intended application of these devices and signaling technique is for point-to-point baseband data
transmission over controlled impedance media of approximately 100 Ω. The transmission media may be
printed-circuit board traces, backplanes, or cables. The ultimate rate and distance of data transfer is dependent
upon the attenuation characteristics of the media and the noise coupling to the environment.
The SN65LVDS349 is characterized for operation from -40°C to 85°C.
SN65LVDS349
PW PACKAGE
(TOP VIEW)
16
15
14
13
12
11
10
9
1
2
3
4
5
6
7
8
RIN1–
RIN1+
RIN2+
RIN2–
RIN3–
RIN3+
RIN4+
RIN4–
EN
ROUT1
ROUT2
VCC
GND
ROUT3
ROUT4
EN
FUNCTIONAL BLOCK DIAGRAM (one of four receivers shown)
EN
EN
RIN+
To Three Other Receivers
RIN–
A.
Failsafe circuit does not exist in LVDS349
Table 1. AVAILABLE OPTIONS (1)
(1)
(2)
2
PART NUMBER (2)
PACKAGE TYPE
PACKAGE MARKING
SN65LVDS349PW
TSSOP
DL349
For the most current package and ordering information, see the Package Option Addendum at the end
of this document, or visit the device product folder on ti.com.
Add the R suffix to the device type (e.g., SN65LVDS349PWR) for taped and reeled carrier.
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Table 2. FUNCTION TABLE (1)
349 DEVICE
INPUTS
VID = VRIN+ - VRIN-
EN
EN
ROUT
VID≥ 50 mV
H
L or OPEN
H
-50 mV < VID < 50 mV
H
L or OPEN
?
VID≤ -50 mV
H
L or OPEN
Open
X
(1)
(2)
(3)
OUTPUTS
L
?
(2) (3)
H
L or OPEN
L or OPEN
X
Z
X
H
Z
This logic table is at dc condition.
Outputs can toggle with inputs disconnected.
? indicates state is indeterminate
EQUIVALENT INPUT AND OUTPUT SCHEMATIC DIAGRAMS
VCC
VCC
1 pF
6.5 kΩ
60 kΩ
Attenuation
Network
RIN+, A
200 kΩ
Attenuation
Network
RIN–, B
7V
250 kΩ
3 pF
6.5 kΩ
7V
7V
7V
Attenuation
Network
VCC
VCC
100 Ω
37 Ω
EN, EN
ROUT, Y
7V
7V
300 kΩ
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ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range (unless otherwise noted) (1)
UNIT
Supply voltage range (2), VCC,VCCA,VCCD1, and VCCD2
Voltage range
-0.5 V to 4 V
Enables, ROUT, or Y
-0.5 V to 6 V
RIN+, RIN-, A or B
-5 V to 6 V
Human body model (3)
Electrostatic discharge
Charged-device model
(4)
A, B, RIN+, RIN- and GND
±15 kV
All pins
±7 kV
All pins
Continuous power dissipation
±500 V
See Dissipation Rating Table
Storage temperature range
(1)
(2)
(3)
(4)
-65°C to 150°C
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltage values, except differential I/O bus voltages, are with respect to network ground terminal (GND, AGND).
Tested in accordance with JEDEC Standard 22, Test Method A114-A.
Tested in accordance with JEDEC Standard 22, Test Method C101.
THERMAL INFORMATION
SN65LVDS349
THERMAL METRIC (1)
PW
UNITS
16 PINS
qJA
Junction-to-ambient thermal resistance (2)
qJC(top)
Junction-to-case(top) thermal resistance
qJB
Junction-to-board thermal resistance
111.9
(3)
33.3
(4)
52.4
(5)
yJT
Junction-to-top characterization parameter
yJB
Junction-to-board characterization parameter
qJC(bottom)
(1)
(2)
(3)
(4)
(5)
(6)
(7)
4
Junction-to-case(bottom) thermal resistance
2.0
(6)
(7)
°C/W
51.2
N/A
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, high-K board, as
specified in JESD51-7, in an environment described in JESD51-2a.
The junction-to-case (top) thermal resistance is obtained by simulating a cold plate test on the package top. No specific
JEDEC-standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.
The junction-to-board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control the PCB
temperature, as described in JESD51-8.
The junction-to-top characterization parameter, yJT, estimates the junction temperature of a device in a real system and is extracted
from the simulation data for obtaining qJA, using a procedure described in JESD51-2a (sections 6 and 7).
The junction-to-board characterization parameter, yJB, estimates the junction temperature of a device in a real system and is extracted
from the simulation data for obtaining qJA , using a procedure described in JESD51-2a (sections 6 and 7).
The junction-to-case (bottom) thermal resistance is obtained by simulating a cold plate test on the exposed (power) pad. No specific
JEDEC standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.
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SLLSE23 – SEPTEMBER 2010
RECOMMENDED OPERATING CONDITIONS
VCC,VCCA,VCCD1,
and VCCD2
Supply voltage
VIH
High-level input voltage
Enables
VIL
Low-level input voltage
Enables
Magnitude of differential
input voltage
|VID| (LVDS349)
Input voltage (any combination of common mode or input signals)
TA
Operating free-air temperature
MIN
NOM
MAX
UNIT
3
3.3
3.6
V
2
5
V
0
0.8
V
0.1
3
V
-4
5
V
-40
85
°C
MIN
TYP (1) MAX
ELECTRICAL CHARACTERISTICS
over recommended operating conditions (unless otherwise noted)
PARAMETER
TEST CONDITIONS
VITH1
Positive-going differential input voltage
threshold
See Figure 1 and Figure 2
VITH2
Negative-going differential input voltage
threshold
See Figure 1
VID(HYS)
Differential input voltage hysteresis,
VITH1 – VITH2
VOH
High-level output voltage
IOH = -4 mA
VOL
Low-level output voltage
IOL = 4 mA
ICC
Supply current
II
Input current (RIN+, RIN-, A or
B inputs)
50
-50
LVDS349
mV
mV
50
LVDS349
UNIT
mV
2.4
V
0.4
Enabled, EN at VCC, EN at 0 V, No load
16
20
Disabled, EN at 0 or EN at VCC
1.1
4
V
mA
VI = -4 V, Other input open
-75
0 V ≤ VI ≤ 2.4 V, Other input 1.2 V
-20
0
0
40
VCC = 1.5 V, VI = -4 V or 5 V, Other input
open
-50
50
VCC = 1.5 V, 0 V ≤ VI≤ 2.4 V, Other input
at 1.2 V
-20
20
-4
4
µA
VI = 5 V, Other input open
0
µA
Power-off input current (RIN+,
RIN-, A or B inputs)
LVDS349
IID
Differential input current
(IRIN+ - IRIN-, or IIA - IIB)
LVDS349
VID = 100 mV, VIC = -3.9 V or 4.9 V
IIH
High-level input current
Enables
VIH = 2 V
0
10
µA
IIL
Low-level input current
Enables
VIL = 0.8 V
0
10
µA
IOZ
High-impedance output current
-10
10
µA
CIN
Input capacitance, RIN+, RIN- input to GND or
VI = 0.4 sin (4E6pft) + 0.5 V
A or B input to AGND
II(OFF)
(1)
VO = 0 V
µA
5
pF
All typical values are at 25°C and with a 3.3-V supply.
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SWITCHING CHARACTERISTICS
over recommended operating conditions (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP (1)
MAX
4
6
ns
4
6
ns
UNIT
tPLH
Propagation delay time, low-to-high-level output
2.5
tPHL
Propagation delay time, high-to-low-level output
2.5
tsk(p)
Pulse skew (|tpHL1 - tpLH1|)
tsk(o)
Output skew (2)
tsk(pp)
Part-to-part skew (3)
tr
Output signal rise time
tf
Output signal fall time
tr
Output signal rise time
tf
Output signal fall time
tPHZ
Propagation delay time, high-level-to-high-impedance output
5
9
ns
tPLZ
Propagation delay time, low-level-to-high-impedance output
5
9
ns
tPZH
Propagation delay time, high-impedance-to-high-level output
8
12
ns
tPZL
Propagation delay time, high-impedance-to-low-level output
8
12
ns
(1)
(2)
(3)
6
200
CL = 10 pF, See Figure 3
ps
150
ps
1
CL = 1 pF, See Figure 3
See Figure 4
ns
1.2
ns
1
ns
650
ps
400
ps
All typical values are at 25°C and with a 3.3-V supply.
tsk(o) is the magnitude of the time difference between the tPHL or tPLH of all receivers of a single device with all of their inputs connected
together.
tsk(pp) is the magnitude of the difference in propagation delay times between any specified terminals of two devices when both devices
operate with the same supply voltages, at the same temperature, and have identical packages and test circuits.
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SLLSE23 – SEPTEMBER 2010
PARAMETER MEASUREMENT INFORMATION
IIA or IRIN+
A or RIN+
Y or ROUT
VID
(VIA + VIB)/2 or
(VRIN+ + VRIN–)/2
VIC
IOY or IROUT
B or RIN–
VIA or VRIN+
IIB or IRIN–
VOY or VROUT
VIB or VRIN–
Figure 1. Voltage and Current Definitions
1000 Ω
100 Ω
+
1000 Ω
100 Ω†
VID
+
V1
V2
VO
–
–
10 pF
VIC
10 pF
10 pF
+
–
A.
Fixture capacitance ±20%.
B.
Resistors are metal film, 1% tolerance, and surface mount
VITH1
0V
VID
–100 mV
VO
100 mV
VID
0V
VITH2
VO
A.
Input signal of 3 MHz, duty cycle of 50±0.2%, and transition time of < 1 ns.
Figure 2. VITH1 and VITH2, Input Voltage Threshold Test Circuit and Definitions
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PARAMETER MEASUREMENT INFORMATION (continued)
A or RIN+
Y or ROUT
VID
VIA or VRIN+
B or RIN–
CL
VOY or VROUT
VIB or VRIN–
A or VRIN+
1.4 V
B or VRIN–
1V
>1.5 µs
0.4 V
VID
0V
–0.2 V
–0.4 V
tPHL
tPLH
td1
td2
VOH
VOY or VROUT
VCC/2
VOL
tf
A.
tr
All input pulses are supplied by a generator having the following characteristics: tr or tf ≤ 1 ns, signaling rate = 250
kHz, duty cycle = 50 ±2%, CL includes instrumentation and fixture capacitance within 0,06 mm of the D.U.T and is
±20%.
Figure 3. Timing Test Circuit and Waveforms
8
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PARAMETER MEASUREMENT INFORMATION (continued)
1.2 V
RIN–
500 Ω
ROUT
RIN+
Inputs
EN
VROUT
+
_
VTEST
10 pF
EN
VTEST
2.5 V
VRIN+
1V
2V
1.4 V
0.8 V
2V
1.4 V
0.8 V
EN
EN
tPZL
tPZL
tPLZ
tPLZ
2.5 V
1.4 V
VOL +0.5 V
VOL
VROUT
VTEST
0V
1.4 V
VRIN+
2V
1.4 V
0.8 V
2V
1.4 V
0.8 V
EN
EN
tPZH
tPZH
VOH
VOH –0.5 V
1.4 V
0V
VROUT
A.
tPHZ
tPHZ
All input pulses are supplied by a generator having the following characteristics: tr or tf ≤ 1 ns, signaling rate = 500
kHz, duty cycle = 50 ±2%, CL includes instrumentation and fixture capacitance within 0,06 mm of the D.U.T and is
±20%.
Figure 4. Enable/Disable Time Test Circuit and Waveforms
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TYPICAL CHARACTERISTICS
LOW-TO-HIGH PROPAGATION DELAY
vs
FREE-AIR TEMPERATURE
HIGH-TO-LOW PROPAGATION DELAY
vs
FREE-AIR TEMPERATURE
5
4.5
t PHL - High-to-Low Propagation Delay - ns
t PLH - Low-to-High Propagation Delay - ns
5
VCC = 3 V
VCC = 3.3 V
4
VCC = 3.6 V
3.5
3
-50
0
50
VCC = 3 V
4.5
VCC = 3.3 V
4
VCC = 3.6 V
3.5
3
-50
100
0
50
TA - Free-Air Temperature - °C
TA - Free-Air Temperature - °C
Figure 5.
Figure 6.
LOW-LEVEL OUTPUT CURRENT
vs
LOW-LEVEL OUTPUT VOLTAGE
HIGH-LEVEL OUTPUT CURRENT
vs
HIGH-LEVEL OUTPUT VOLTAGE
0
40
TA = 25°C,
VCC = 3.3 V
I OH - High-Level Output Current - mA
I OL - Low-Level Output Current - mA
TA = 25°C,
VCC = 3.3 V
30
20
10
0
-10
-20
-30
-40
0
1
2
3
4
5
0
VOL - Low-Level Output Voltage - V
Figure 7.
10
100
1
2
3
VOH - High-Level Output Voltage - V
4
Figure 8.
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TYPICAL CHARACTERISTICS (continued)
DATA TRANSFER RATE
vs
FREE-AIR TEMPERATURE
RMS SUPPLY CURRENT
vs
SWITCHING FREQUENCY
110
500
400
I CC - RMS Supply Current - mA
Maximum T ransfer Rate - Mxfr/s
450
215 -1 prbs NRZ,
VIC = 1.2 V,
CL = 5.5 pF,
40% Open Eye,
4 Receivers Switching,
VCC = 3.3 V,
SN65LVDS349PW
VID = 0.4 V
350
300
VID = 0.2 V
VID = 0.1 V
4 Receivers Switching,
50% Duty Cycle,
CL = 5.5 pF,
TA = 25°C
90
VCC = 3.6 V
VCC = 3.3 V
70
VCC = 3 V
50
30
250
200
-60
10
-40
-20
0
20
40
60
80
100
0
50
100
150
200
250
300
f - Switching Frequency - MHz
TA - Free-Air Temperature - °C
Figure 9.
Figure 10.
223 -1 prbs NRZ, TA = 25°C, CL = 5.5 pF,
4 Receivers Switching, VCC = 3.3 V
Figure 11. SN65LVDS349 Eye
Pattern Running at 200 Mxfr/s
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APPLICATION INFORMATION
IMPEDANCE MATCHING AND REFLECTIONS
A termination mismatch can result in reflections that degrade the signal at the load. A low source impedance
causes the signal to alternate polarity at the load (oscillates) as shown in Figure 12. High source impedance
results in the signal accumulating monotonically to the final value (stair step) as shown in Figure 13. Both of
these modes result in a delay in valid signal and reduce the opening in the eye pattern. A 10% termination
mismatch results in a 5% reflection (r = ZL - ZO/ZL + ZO), even a 1:3 mismatch absorbs half of the incoming
signal. This shows that termination is important in the more critical cases, however, in a general sense, a rather
large termination mismatch is not as critical when the differential output signal is much greater than the receiver
sensitivity.
TIME DOMAIN RESPONSE
0.25
TIME DOMAIN RESPONSE
0.25
ZS = 0 Ω
ZO = 100 Ω
ZT = 132 Ω
V at Load
0.2
ZS = 0 Ω
ZO = 100 Ω
ZT = 90 Ω
0.2
V at Load
VI
0.15
Voltage - V
Voltage - V
VI
0.1
0.05
0.15
0.1
0.05
0
0
0
5
10
15
20
25
0
t - Time - ns
5
10
15
20
25
t - Time - ns
Figure 12. Low-Source Impedance
Figure 13. High-Source Impedance
For example, a 200-mV drive signal into a 100-Ω lossless transmission media with a termination resistor of 90 Ω
to 132Ω results in ~227 mV to 189 mV into the receiver. This would typically be more than enough signal into a
receiver with a sensitivity of ±50 mV assuming no other disturbance or attenuation on the line. The other factors,
which reduce the signal margin, do affect this and therefore it is important to match the impedance as closely as
possible to allow more noise immunity at the receiver.
12
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ACTIVE FAILSAFE FEATURE
A differential line receiver commonly has a failsafe circuit to prevent it from switching on input noise. Current
LVDS failsafe solutions require either external components with subsequent reductions in signal quality or
integrated solutions with limited application.
In the SN65LVDS349, the failsafe circuit does not exist. Thus the output can switch if there is noise on the input
lines.
EN
EN
RIN+
To Three Other Receivers
RIN–
Figure 14. Failsafe Circuit Does Not Exist in the SN65LVDS349
ECL/PECL-to-LVTTL CONVERSION WITH TI LVDS RECEIVER
The various versions of emitter-coupled logic (i.e., ECL, PECL, and LVPECL) are often the physical layer of
choice for system designers. Designers know that established technology is capable of high-speed data
transmission. In the past, system requirements often forced the selection of ECL. Now technologies like LVDS
provide designers with another alternative. While the total exchange of ECL for LVDS may not be a design
option, designers have been able to take advantage of LVDS by implementing a small resistor divider network at
the input of the LVDS receiver. TI has taken the next step by introducing a wide common-mode LVDS receiver
(no divider network required) which can be connected directly to an ECL driver with only the termination bias
voltage required for ECL termination (VCC - 2 V).
Figure 15 shows the use of an LV/PECL driver driving 5 meters of CAT-5 cable and being received by TI's wide
common-mode receiver and the resulting eye-pattern. The values for R3 are required in order to provide a
resistor path to ground for the LV/PECL driver. With no resistor divider, R1 simply needs to match the
characteristic load impedance of 50 Ω. The R2 resistor is a small value intended to minimize common-mode
reflections.
VCC
R1 = 50 Ω
R2 = 50 Ω
ICC
5 Meters
of CAT-5
LV/PECL
R3
VEE
R3
VB
VCC
ICC
LVDS
VB
R1
R1
R2
R3 = 240 Ω
Figure 15. LVPECL or PECL to Remote Wide Common-Mode LVDS Receiver
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PACKAGE OPTION ADDENDUM
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10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
SN65LVDS349PW
ACTIVE
TSSOP
PW
16
90
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
DL349
SN65LVDS349PWR
ACTIVE
TSSOP
PW
16
2000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
DL349
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of