SN65MLVD047
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SLLS606A – MARCH 2004 – REVISED JULY 2005
MULTIPOINT-LVDS QUAD DIFFERENTIAL LINE DRIVER
FEATURES
•
•
•
•
•
DESCRIPTION
Differential Line Drivers for 30-Ω to 55-Ω
Loads and Data Rates(1) Up to 200 Mbps,
Clock Frequencies up to 100 MHz
Supports Multipoint Bus Architectures
Operates from a Single 3.3-V Supply
Characterized for Operation from –40°C to
85°C
16-Pin SOIC (JEDEC MS-012) and 16-Pin
TSSOP (JEDEC MS-153) Packaging
APPLICATIONS
•
•
•
•
•
•
(1)
Clock Distribution
Backplane or Cabled Multipoint Data Transmission in Telecommunications, Automotive,
Industrial, and Other Computer Systems
Cellular Base Stations
Central-Office and PBX Switching
Bridges and Routers
Low-Power High-Speed Short-Reach Alternative to TIA/EIA-485 (1)
The SN65MLVD047 is a quadruple line driver. The
output current of this device has been increased, in
comparison to standard LVDS compliant devices, in
order to support doubly terminated transmission lines
and heavily loaded backplane bus applications.
Backplane applications generally require impedance
matching termination resistors at both ends of the
bus. The effective impedance of a doubly terminated
bus can be as low as 30 Ω due to the bus
terminations, as well as the capacitive load of bus
interface devices. SN65MLVD047 drivers allow for
operation with loads as low as 30 Ω. The
SN65MLVD047 devices allow for multiple drivers to
be present on a single bus. Driver edge rate control is
incorporated
to
support
operation.
The
SN65MLVD047 provides 9-kV ESD protection on all
bus pins.
The data rate of a line is the number of voltage transitions that
are made per second expressed in the units bps (bits per
second).
LOGIC DIAGRAM (POSITIVE LOGIC)
EN
EN
1A
2A
3A
4A
1Y
1Z
2Y
2Z
3Y
3Z
4Y
4Z
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2004–2005, Texas Instruments Incorporated
SN65MLVD047
www.ti.com
SLLS606A – MARCH 2004 – REVISED JULY 2005
These devices have limited built-in ESD protection. The leads should be shorted together or the device
placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
ORDERING INFORMATION
PART NUMBER
PACKAGE MARKING
SN65MLVD047D
MLVD047
PACKAGE/CARRIER
16-Pin SOIC/Tube
SN65MLVD047DR
MLVD047
16-Pin SOIC/Tape and Reel
SN65MLVD047PW
MLVD047
16-Pin TSSOP/Tube
SN65MLVD047PWR
MLVD047
16-Pin TSSOP/Tape and Reel
PACKAGE DISSIPATION RATINGS
PACKAGE
PCB JEDEC
STANDARD
TA ≤ 25°C
POWER RATING
DERATING FACTOR
ABOVE TA = 25°C (1)
TA = 85°C
POWER RATING
D(16)
Low-K (2)
898 mW
7.81 mW/°C
429 mW
Low-K (2)
592 mW
5.15 mW/°C
283 mw
High-K (3)
945 mW
8.22 mW/°C
452 mw
PW(16)
(1)
(2)
(3)
This is the inverse of the junction-to-ambient thermal resistance when board mounted and with no air flow.
In accordance with the Low-K thermal metric definitions of EIA/JESD51-3.
In accordance with the High-K thermal metric definitions of EIA/JESD51-7.
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range unless otherwise noted (1)
UNITS
range (2)
VCC
Supply voltage
VI
Input voltage range
A, EN, EN
–0.5 V to 4 V
–0.5 V to 4 V
VO
Output voltage range
Y, Z
–1.8 V to 4 V
Human Body Model (3)
Electrostatic discharge
TJ
Junction temperature
PD
Continuous power dissipation
(1)
(2)
(3)
(4)
(5)
2
Y and Z
±9 kV
All pins
±4 kV
Charged-Device Model (4)
All pins
±1500 V
Machine Model (5)
All pins
200 V
140°C
See Dissipation Rating Table
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltage values, except differential I/O bus voltages, are with respect to the circuit ground terminal.
Tested in accordance with JEDEC Standard 22, Test Method A114-B.
Tested in accordance with JEDEC Standard 22, Test Method C101-A.
Tested in accordance with JEDEC Standard 22, Test Method A115-A.
SN65MLVD047
www.ti.com
SLLS606A – MARCH 2004 – REVISED JULY 2005
RECOMMENDED OPERATING CONDITIONS (see Figure 1)
MIN
NOM
3.3
MAX
UNIT
VCC
Supply voltage
3
3.6
V
VIH
High-level input voltage
2
VCC
V
VIL
Low-level input voltage
0
0.8
V
–1.4
3.8
V
30
55
Ω
200
Mbps
100
MHz
125
°C
Voltage at any bus terminal (separate or common mode) VY or VZ
RL
Differential load resistance
1/tUI
Signaling rate
Clock frequency
TJ
Junction temperature
–40
THERMAL CHARACTERISTICS
PARAMETER
TEST CONDITIONS
Low-K
board (1),
no airflow
MIN
D
Low-K board (1), no airflow
θJA
Junction-to-ambient thermal resistance
Low-K board (1), 150 LFM
Low-K
board (1),
250 LFM
Junction-to-board thermal resistance
θJC
Junction-to-case thermal resistance
PD
Device power dissipation
(1)
(2)
High-K board (2)
MAX
UNIT
128
194.2
PW
High-K board (2), no airflow
θJB
TYP
°C/W
146.8
133.1
121.6
D
51.1
PW
85.3
D
45.4
PW
34.7
°C/W
°C/W
EN = VCC, EN = GND, RL = 50 Ω, Input 100 MHz 50 %
duty cycle square wave to 1A:4A, TA = 85°C
288.5
mW
MIN (1) TYP (2)
MAX
UNIT
59
70
2
4
In accordance with the Low-K thermal metric difinitions of EIA/JESD51-3.
In accordance with the High-K thermal metric difinitions of EIA/JESD51-7.
DEVICE ELECTRICAL CHARACTERISTICS
over recommended operating conditions unless otherwise noted
PARAMETER
ICC
(1)
(2)
Supply current
Driver enabled
TEST CONDITIONS
EN = VCC, EN = GND, RL = 50 Ω, All inputs = VCC or GND
Driver disabled EN = GND, EN = VCC, RL = No load, All inputs = VCC or GND
mA
The algebraic convention, in which the least positive (most negative) limit is designated as minimum is used in this data sheet.
All typical values are at 25°C and with a 3.3-V supply voltage.
3
SN65MLVD047
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SLLS606A – MARCH 2004 – REVISED JULY 2005
DEVICE ELECTRICAL CHARACTERISTICS
over recommended operating conditions unless otherwise noted
PARAMETER
MIN (1) TYP (2)
TEST CONDITIONS
MAX
UNIT
LVTTL (EN, EN, 1A:4A)
|IIH|
High-level input current
VIH = 2 V or VCC
0
|IIL|
Low-level input current
VIL = GND or 0.8 V
0
Ci
Input capacitance
VI = 0.4 sin(30E6πt) + 0.5 V (3)
10
µA
10
µA
5
pF
M-LVDS (1Y/1Z:4Y/4Z)
|VYZ|
Differential output voltage magnitude
480
650
mV
∆|VYZ|
Change in differential output voltage magnitude See Figure 2
between logic states
–50
50
mV
VOS(SS)
Steady-state common-mode output voltage
0.8
1.2
V
∆VOS(SS)
Change in steady-state common-mode output
voltage between logic states
–50
50
mV
VOS(PP)
Peak-to-peak common-mode output voltage
150
mV
VY(OC)
Maximum steady-state open-circuit output voltage
0
2.4
V
0
2.4
V
1.2 VSS
V
See Figure 3
See Figure 7
VZ(OC)
Maximum steady-state open-circuit output voltage
VP(H)
Voltage overshoot, low-to-high level output
VP(L)
Voltage overshoot, high-to-low level output
|IOS|
Differential short-circuit output current magnitude
See Figure 4
IOZ
High-impedance state output current
–1.4 V ≤ (VY or VZ) ≤ 3.8 V,
Other output = 1.2 V
IO(OFF)
Power-off output current
–1.4 V ≤ (VY or VZ) ≤ 3.8 V,
Other output = 1.2 V, VCC = 0 V
See Figure 5
–0.2 VSS
Output capacitance
VY or VZ = 0.4 sin(30E6πt) + 0.5
Other input at 1.2 V, driver disabled
CYZ
Differential output capacitance
VYZ = 0.4 sin(30E6πt) V, (3)
Driver disabled
CY/Z
Output capacitance balance, (CY/CZ)
(1)
(2)
(3)
4
24
mA
–15
10
µA
–10
10
µA
V, (3)
CY or CZ
V
3
pF
2.5
0.99
1.01
The algebraic convention, in which the least positive (most negative) limit is designated as minimum is used in this data sheet.
All typical values are at 25°C and with a 3.3-V supply voltage.
HP4194A impedance analyzer (or equivalent)
pF
SN65MLVD047
www.ti.com
SLLS606A – MARCH 2004 – REVISED JULY 2005
SWITCHING CHARACTERISTICS
over recommended operating conditions unless otherwise noted
PARAMETER
TEST CONDITIONS
MIN
TYP (1)
MAX
UNIT
tPLH
Propagation delay time, low-to-high-level output
1
1.5
2.4
ns
tPHL
Propagation delay time, high-to-low-level output
1
1.5
2.4
ns
tr
Differential output signal rise time
1
1.9
ns
tf
Differential output signal fall time
1
1.9
ns
tsk(o)
Output skew
100
ps
tsk(p)
Pulse skew (|tpHL - tpLH|)
100
ps
tsk(pp)
Part-to-part skew (2)
600
ps
tjit(per)
Period jitter, rms (1 standard deviation) (3)
1
ps
5
36
ps
46
158
ps
7
ns
7
ns
8
ns
8
ns
jitter (3)
tjit(c-c)
Cycle-to-cycle
tjit(pp)
Peak-to-peak jitter (3) (4)
tPZH
Enable time, high-impedance-to-high-level output
tPZL
Enable time, high-impedance-to-low-level output
tPHZ
Disable time, high-level-to-high-impedance output
tPLZ
Disable time, low-level-to-high-impedance output
(1)
(2)
(3)
(4)
See Figure 5
22
All inputs 100 MHz clock input
All inputs 100 MHz clock input
All inputs 200 Mbps 215-1 PRBS input
See Figure 6
See Figure 6
0.2
All typical values are at 25°C and with a 3.3-V supply voltage.
tsk(pp) is the magnitude of the difference in propagation delay times between any specified terminals of two devices when both devices
operate with the same supply voltages, at the same temperature, and have identical packages and test circuits.
Stimulus jitter has been subtracted from the measurements.
Peak-to-peak jitter includes jitter due to pulse skew (tsk(p)).
5
SN65MLVD047
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SLLS606A – MARCH 2004 – REVISED JULY 2005
PARAMETER MEASUREMENT INFORMATION
VCC
IY
Y
II
D
VYZ
IZ
VY
Z
VI
VOS
VZ
VY + VZ
2
Figure 1. Driver Voltage and Current Definitions
3.32 kΩ
Y
+
_
49.9 Ω
VYZ
D
Z
-1 V ≤ Vtest ≤ 3.4 V
3.32 kΩ
NOTE: All resistors are 1% tolerance.
Figure 2. Differential Output Voltage Test Circuit
R1
24.9 Ω
Y
C1
1 pF
D
≈ 1.3 V
Z
≈ 0.7 V
VOS(PP)
Z
C2
1 pF
Y
R2
24.9 Ω
VOS
C3
2.5 pF
VOS(SS)
VOS(SS)
A.
All input pulses are supplied by a generator having the following characteristics: tr or tf ≤ 1 ns, pulse frequency = 500
kHz, duty cycle = 50 ± 5%.
B.
C1, C2 and C3 include instrumentation and fixture capacitance within 2 cm of the D.U.T. and are ±20%.
C.
R1 and R2 are metal film, surface mount, ±1%, and located within 2 cm of the D.U.T.
D.
The measurement of VOS(PP) is made on test equipment with a –3 dB bandwidth of at least 1 GHz.
Figure 3. Test Circuit and Definitions for the Common-Mode Output Voltage
Y
IOS
0 V or VCC
+
Z
VTest
-1 V to 3.4 V
-
Figure 4. Short-Circuit Test Circuit
6
SN65MLVD047
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SLLS606A – MARCH 2004 – REVISED JULY 2005
PARAMETER MEASUREMENT INFORMATION (continued)
Y
D
C1
1 pF
C3
0.5 pF
R1
Output
50 Ω
Z
C2
1 pF
VCC
VCC/2
Input
0V
tpLH
tpHL
VSS
0.9VSS
VP(H)
Output
0V
VP(L)
0.1V
SS
0 V SS
tf
tr
A.
All input pulses are supplied by a generator having the following characteristics: tr or tf ≤ 1 ns, frequency = 500 kHz,
duty cycle = 50 ± 5%.
B.
C1, C2, and C3 include instrumentation and fixture capacitance within 2 cm of the D.U.T. and are ±20%.
C.
R1 is a metal film, surface mount, and 1% tolerance and located within 2 cm of the D.U.T.
D.
The measurement is made on test equipment with a –3 dB bandwidth of at least 1 GHz.
Figure 5. Driver Test Circuit, Timing, and Voltage Definitions for the Differential Output Signal
R1
24.9 Ω
Y
0 V or VCC
C1
1 pF
D
Z
Input
C4
Output
0.5 pF
C2
1 pF
C3
2.5 pF
R2
24.9 Ω
EN or EN
VCC
VCC/2
0V
EN
EN
tpZH
tpHZ
∼ 0.6 V
0.1 V
0V
Output With
D at VCC
Output With
D at 0 V
tpZL
tpLZ
0V
-0.1 V
∼ -0.6 V
A.
All input pulses are supplied by a generator having the following characteristics: tr or tf ≤ 1 ns, frequency = 500 kHz,
duty cycle = 50 ± 5%.
B.
C1, C2, C3, and C4 includes instrumentation and fixture capacitance within 2 cm of the D.U.T. and are ±20%.
C.
R1 and R2 are metal film, surface mount, and 1% tolerance and located within 2 cm of the D.U.T.
D.
The measurement is made on test equipment with a –3 dB bandwidth of at least 1 GHz.
Figure 6. Driver Enable and Disable Time Circuit and Definitions
7
SN65MLVD047
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SLLS606A – MARCH 2004 – REVISED JULY 2005
PARAMETER MEASUREMENT INFORMATION (continued)
Y
0 V or VCC
Z
1.62 kΩ , ±1%
VY, or VZ
Figure 7. Driver Maximum Steady State Output Voltage
VCC
CLOCK
INPUT
VCC/2
0V
1/f0
Period Jitter
IDEAL
OUTPUT 0 V
VY -VZ
VCC
PRBS INPUT
0V
ACTUAL
OUTPUT 0 V
VY -VZ
VCC/2
1/f0
Peak to Peak Jitter
VY -VZ
tc(n)
tjit(per) = tc(n) -1/f0
0V
OUTPUT
VY -VZ
tjit(pp)
Cycle to Cycle Jitter
OUTPUT
0V
VY - VZ
tc(n)
tc(n+1)
tjit(cc) = | tc(n) - tc(n+1) |
A.
All input pulses are supplied by an Agilent 8304A Stimulus System.
B.
The measurement is made on a TEK TDS6604 running TDSJIT3 application software
C.
Period jitter and cycle-to-cycle jitter are measured using a 100 MHz 50 ±1% duty cycle clock input.
D.
Peak-to-peak jitter is measured using a 200 Mbps 215– 1 PRBS input.
Figure 8. Driver Jitter Measurement Waveforms
8
SN65MLVD047
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SLLS606A – MARCH 2004 – REVISED JULY 2005
DEVICE INFORMATION
PIN ASSIGNMENTS
D PACKAGE
(TOP VIEW)
EN
1A
2A
VCC
GND
3A
4A
EN
1
2
3
4
5
6
7
8
PW PACKAGE
(TOP VIEW)
16
15
14
13
12
11
10
9
1Z
1Y
2Y
2Z
3Z
3Y
4Y
4Z
1
2
3
4
5
6
7
8
EN
1A
2A
VCC
GND
3A
4A
EN
16
15
14
13
12
11
10
9
1Z
1Y
2Y
2Z
3Z
3Y
4Y
4Z
DEVICE FUNCTION TABLE
INPUTS (1)
(1)
OUTPUTS (1)
D
EN
EN
Y
Z
L
H
L
L
H
H
H
L
H
L
OPEN
H
L
L
H
X
L or OPEN
X
Z
Z
X
X
H or OPEN
Z
Z
H = high level, L = low level, Z = high impedance, X = Don't Care
EQUIVALENT INPUT AND OUTPUT SCHEMATIC DIAGRAMS
DRIVER INPUT AND POSITIVE DRIVER ENABLE
VCC
DRIVER OUTPUT
NEGATIVE DRIVER ENABLE
VCC
VCC
360 kΩ
400 Ω
D or EN
7V
400 Ω
Y or Z
360 kΩ
EN
7V
9
SN65MLVD047
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SLLS606A – MARCH 2004 – REVISED JULY 2005
TYPICAL CHARACTERISTICS
RMS SUPPLY CURRENT
vs
INPUT FREQUENCY
RMS SUPPLY CURRENT
vs
FREE-AIR TEMPERATURE
65
VCC = 3.3 V,
TA = 25C,
EN = VCC,
EN = GND,
RL = 50 ,
All Inputs
75
70
I CC − Supply Current − mArms
ICC − Supply Current − mArms
80
65
60
50
62
60
25
50
75
100
f − Input Frequency − MHz
125
−40
−15
10
35
60
TA − Free-Air Temperature − °C
Figure 9.
Figure 10.
DIFFERENTIAL OUTPUT VOLTAGE MAGNITUDE
vs
INPUT FREQUENCY
DRIVER PROPAGATION DELAY TIME
vs
FREE-AIR TEMPERATURE
600
85
1.54
TA = 25C,
RL = 50
VCC = 3.6 V
VCC = 3.3 V
580
1.52
t pd − Propagation Delay Time − ns
VYZ − Differential Output Voltage Magnitude − mV
63
61
55
560
540
VCC = 3 V
520
VCC = 3.3 V,
f = 500 kHz,
RL = 50
tPHL
1.5
tPLH
1.48
1.46
1.44
1.42
1.4
1.38
1.36
500
25
50
75
100
f − Input Frequency − MHz
Figure 11.
10
64
VCC = 3.3 V,
f = 50 MHz,
EN = VCC,
EN = GND,
RL = 50
125
1.34
−40
−15
10
35
60
TA − Free-Air Temperature − °C
Figure 12.
85
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SLLS606A – MARCH 2004 – REVISED JULY 2005
TYPICAL CHARACTERISTICS (continued)
DRIVER TRANSITION TIME
vs
FREE-AIR TEMPERATURE
PEAK-TO-PEAK JITTER
vs
DATA RATE
100
1.7
VCC = 3.3 V,
f = 500 kHz,
RL = 50
90
80
tf
t jit(p-p) − Peak-To-Peak Jitter − ps
t r or tf − Rising or Falling Transition Time − ns
1.8
1.6
tr
1.5
1.4
1.3
1.2
−40
−15
10
35
60
70
60
50
40
30
20
10
85
VCC = 3.3 V,
TA = 25C,
All Inputs = 215−1 PRBS NRZ,
(See Figure 8)
50
100
TA − Free-Air Temperature − °C
Figure 14.
PERIOD JITTER
vs
CLOCK FREQUENCY
CYCLE-TO-CYCLE JITTER
vs
CLOCK FREQUENCY
9
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
250
10
VCC = 3.3 V,
TA = 25C,
All Inputs = Clock
(See Figure 8)
t jit(c-c) − Cycle-To-Cycle Jitter − ps
t jit(per) − Period Jitter − ps
0.8
200
Figure 13.
1
0.9
150
Data Rate − Mbps
8
VCC = 3.3 V,
TA = 25C,
All Inputs = Clock
(See Figure 8)
7
6
5
4
3
2
1
25
50
75
100
f − Clock Frequency − MHz
Figure 15.
125
0
25
50
75
100
125
f − Clock Frequency − MHz
Figure 16.
11
SN65MLVD047
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APPLICATION INFORMATION
Multipoint Configuration
The SN65MLVD047 is designed to allow multipoint communication on a shared bus.
Multipoint is a bus configuration with multiple drivers and receivers present. An example is shown in Figure 17.
The figure shows transceivers interfacing to the bus, but a combination of drivers, receivers, and transceivers is
also possible. Termination resistors need to be placed on each end of the bus, with the termination resistor value
matched to the loaded bus impedance.
Figure 17. Multipoint Architecture
Multidrop Configuration
Multidrop configuration is similar to multipoint configuration, but only one driver is present on the bus. A multidrop
system can be configured with the driver at one end of the bus, or in the middle of the bus. When a driver is
located at one end, a single termination resistor is located at the far end, close to the last receiver on the bus.
Alternatively, the driver can be located in the middle of the bus, to reduce the maximum flight time. With a
centrally located driver, termination resistors are located at each end of the bus. In both cases the termination
resistor value should be matched to the loaded bus impedance. Figure 18 shows examples of both cases.
D
Zt
Zt
Zt
D
Figure 18. Multidrop Architectures With Different Driver Locations
Unused Channel
The SN65MLVD047 is designed to allow multipoint communication on a standard bus. A 360-kΩ pull-down
resistor is built in every LVTTL input. The unused driver inputs and outputs may be left floating.
Live Insertion/Glitch Free Power Up/Down
During a live insertion event or a power cycle the outputs of the SN65MLVD047 leave the high impedance state
and possibly glitch the bus. Specifically when the VCC applied to the device is between 1.3 and 2.0 VDC the
output state (high or low) of the device reflects the input level at the corresponding A pin.
12
SN65MLVD047
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APPLICATION INFORMATION (continued)
Note:
Channel 1: VCC, Channel 2: Differential Bus
Voltage
The output state of the part during this voltage range is independent of the EN and EN pins.
In order to insure that data is not corrupted during a live insertion event or the power cycling of an individual
node on a multipoint bus it is important to isolate the outputs of the device from the bus until the VCC has
reached at least 2.0 VDC. At this voltage level the device output state accurately reflects the logic conditions as
defined in the Device Function Table.
13
PACKAGE OPTION ADDENDUM
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10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
SN65MLVD047D
ACTIVE
SOIC
D
16
40
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
MLVD047
SN65MLVD047DR
ACTIVE
SOIC
D
16
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
MLVD047
SN65MLVD047PW
ACTIVE
TSSOP
PW
16
90
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
MLVD047
SN65MLVD047PWR
ACTIVE
TSSOP
PW
16
2000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
MLVD047
SN65MLVD047PWRG4
ACTIVE
TSSOP
PW
16
2000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
MLVD047
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of